CN105655970A - Overvoltage protection circuit and implantable active electronic medical device - Google Patents
Overvoltage protection circuit and implantable active electronic medical device Download PDFInfo
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- CN105655970A CN105655970A CN201511018559.8A CN201511018559A CN105655970A CN 105655970 A CN105655970 A CN 105655970A CN 201511018559 A CN201511018559 A CN 201511018559A CN 105655970 A CN105655970 A CN 105655970A
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- field effect
- effect transistor
- oxide
- metal
- semiconductor field
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/20—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage
Abstract
The embodiment of the invention discloses an overvoltage protection circuit and an implantable active electronic medical device. The overvoltage protection circuit comprises a first MOS field effect transistor, a second MOS field effect transistor, a third MOS field effect transistor, a fourth MOS field effect transistor and a bridge rectifier, wherein the gate of the first MOS field effect transistor is connected with the source or drain of the third MOS field effect transistor, and the gate of the second MOS field effect transistor is connected with the source or drain of the fourth MOS field effect transistor. With the overvoltage protection circuit and the implantable active electronic medical device provided by the embodiment of the invention adopted, damage to the implantable active electronic medical device caused by overvoltage can be avoided.
Description
Technical field
The present embodiments relate to implantable medical devices technical field, particularly relate to a kind of overvoltage crowbar and Implanted active electronic medical treatment device.
Background technology
Implantable electronic medical device is replacing conventional portable medical apparatus and instruments becomes medical treatment research and development focus, and implantable medical is more convenient in the health data of recovery and monitoring function of human body, and fast, accuracy is higher.
The armarium implanted need to be charged by chargeable implantable medical devices by external charger, and it realizes the transmission of energy by the principle of electromagnetic induction. When implantable medical device is in variation magnetic field, its coupling coil two ends can produce induced voltage, when variation magnetic field is sufficiently strong, induced voltage can exceed the stress upper limit of device, the electronic device in implantation equipment can be damaged, human body is produced harm, can be in peril of one's life time serious.
Summary of the invention
For above-mentioned technical problem, embodiments provide a kind of overvoltage crowbar, to avoid because overvoltage causes the damage to Implanted active electronic medical treatment device.
First aspect, embodiments provide a kind of overvoltage crowbar, described circuit includes: the first metal-oxide-semiconductor field effect transistor, second metal-oxide-semiconductor field effect transistor, 3rd metal-oxide-semiconductor field effect transistor, 4th metal-oxide-semiconductor field effect transistor and bridge rectifier, one in the source electrode of described first metal-oxide-semiconductor field effect transistor and drain electrode is connected with first input end of described overvoltage crowbar, another is connected with first input end of described bridge rectifier, one in the source electrode of described second metal-oxide-semiconductor field effect transistor and drain electrode is connected with the second input terminal of described overvoltage crowbar, another is connected with the second input terminal of described bridge rectifier, one in the source electrode of the grid of described first metal-oxide-semiconductor field effect transistor and described 3rd metal-oxide-semiconductor field effect transistor and drain electrode is connected, another in the source electrode of described 3rd metal-oxide-semiconductor field effect transistor and drain electrode is connected with the ungrounded lead-out terminal of described bridge rectifier, one in the source electrode of the grid of described second metal-oxide-semiconductor field effect transistor and described 4th metal-oxide-semiconductor field effect transistor and drain electrode is connected, another in the source electrode of described 4th metal-oxide-semiconductor field effect transistor and drain electrode is connected with the ungrounded lead-out terminal of described bridge rectifier, and described 3rd metal-oxide-semiconductor field effect transistor is connected with the outfan of over-voltage detection circuit with the grid of described 4th metal-oxide-semiconductor field effect transistor.
Further, the grid of described first metal-oxide-semiconductor field effect transistor is in series with the first current-limiting resistance with between source electrode or the drain electrode of the 3rd metal-oxide-semiconductor field effect transistor being attached thereto, and the grid of described second metal-oxide-semiconductor field effect transistor is in series with the second current-limiting resistance with between source electrode or the drain electrode of the 4th metal-oxide-semiconductor field effect transistor being attached thereto.
Further, it is parallel with the first protection electric capacity between two input terminals of the input port of described bridge rectifier.
Further, it is parallel with the second protection electric capacity between two lead-out terminals of the output port of described bridge rectifier.
Further, if described over-voltage detection circuit is not detected by overvoltage, then described 3rd metal-oxide-semiconductor field effect transistor and described 4th metal-oxide-semiconductor field effect transistor conducting, and if described over-voltage detection circuit detects overvoltage, then described 3rd metal-oxide-semiconductor field effect transistor and described 4th metal-oxide-semiconductor field effect transistor cut-off.
Further, described bridge rectifier is single-phase bridge rectifier.
Second aspect, the embodiment of the present invention additionally provides a kind of Implanted active electronic medical treatment device, and described device includes as above overvoltage crowbar described in first aspect.
The overvoltage crowbar of embodiment of the present invention offer and Implanted active electronic medical treatment device; the break-make between input signal and late-class circuit is controlled by four metal-oxide-semiconductor field effect transistors; achieve the overvoltage protection to late-class circuit, thus effectively avoiding because overvoltage causes the damage to Implanted active electronic medical treatment device.
Accompanying drawing explanation
By reading the detailed description that non-limiting example is made made with reference to the following drawings, the other features, objects and advantages of the present invention will become more apparent upon:
Fig. 1 is the circuit structure diagram of the overvoltage crowbar that first embodiment of the invention provides;
Fig. 2 is the structure chart of the Implanted active electronic medical treatment device that second embodiment of the invention provides.
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention is described in further detail. It is understood that specific embodiment described herein is used only for explaining the present invention, but not limitation of the invention. It also should be noted that, for the ease of describing, accompanying drawing illustrate only part related to the present invention but not entire infrastructure.
First embodiment
Present embodiments provide a kind of technical scheme of overvoltage crowbar. Referring to Fig. 1; in this technical scheme, described overvoltage crowbar includes: the first metal-oxide-semiconductor field effect transistor Q1, the second metal-oxide-semiconductor field effect transistor Q2, the 3rd metal-oxide-semiconductor field effect transistor Q3, the 4th metal-oxide-semiconductor field effect transistor Q4, bridge rectifier M1, the first current-limiting resistance R1, the second current-limiting resistance R2, the first protection electric capacity C1 and the second protection electric capacity C2.
Exemplary; the drain electrode of described first metal-oxide-semiconductor field effect transistor Q1 is connected with an input terminal of described overvoltage crowbar; the source electrode of described first metal-oxide-semiconductor field effect transistor Q1 is connected with an input terminal of described bridge rectifier M1, and the grid of described first metal-oxide-semiconductor field effect transistor Q1 is connected by the source electrode of described first current-limiting resistance R1 and described 3rd metal-oxide-semiconductor field effect transistor Q3.
Exemplary; the drain electrode of described second metal-oxide-semiconductor field effect transistor Q2 is connected with another input terminal of described overvoltage crowbar; the source electrode of described second metal-oxide-semiconductor field effect transistor Q2 is connected with another input terminal of described bridge rectifier M1, and the grid of described second metal-oxide-semiconductor field effect transistor Q2 is connected by the source electrode of described second current-limiting resistance R2 and described 4th metal-oxide-semiconductor field effect transistor Q4.
Exemplary; the source electrode of described 3rd metal-oxide-semiconductor field effect transistor Q3 is connected with one end of described first current-limiting resistance R1; the drain electrode of described 3rd metal-oxide-semiconductor field effect transistor Q3 is connected with a lead-out terminal of ground connection in two lead-out terminals of described overvoltage crowbar, and the grid of described 3rd metal-oxide-semiconductor field effect transistor Q3 is connected with the outfan of over-voltage detection circuit.
Exemplary equally; the source electrode of described 4th metal-oxide-semiconductor field effect transistor Q4 is connected with one end of described second current-limiting resistance R2; the drain electrode of described 4th metal-oxide-semiconductor field effect transistor Q4 is connected with a lead-out terminal of ground connection in two lead-out terminals of described overvoltage crowbar equally, and the grid of described 4th metal-oxide-semiconductor field effect transistor Q4 is also connected with the outfan of described over-voltage detection circuit.
Two input terminals of described bridge rectifier M1 are connected with the source electrode of described first metal-oxide-semiconductor field effect transistor and described second metal-oxide-semiconductor field effect transistor respectively. Further, between two input terminals of described bridge rectifier M1, the first protection electric capacity C1 also it is parallel with.
Two lead-out terminals of described bridge rectifier M1 are exactly two lead-out terminals of described overvoltage crowbar. The second protection electric capacity C2 also it is parallel with between the two lead-out terminal. A ground connection in said two lead-out terminal, and another and earth-free.
And, described bridge rectifier is single-phase bridge rectifier.
When being not detected by overvoltage, described over-voltage detection circuit is by exporting the 3rd metal-oxide-semiconductor field effect transistor Q3 described in high level or low level control and described 4th metal-oxide-semiconductor field effect transistor Q4 conducting. Now, described first metal-oxide-semiconductor field effect transistor Q1 and described second metal-oxide-semiconductor field effect transistor Q2 is also switched on. Described bridge rectifier M1 normal operation, late-class circuit is able to receive that the driving DC voltage being converted to by the alternating voltage inputted.
If be detected that overvoltage, described over-voltage detection circuit controls described 3rd metal-oxide-semiconductor field effect transistor Q3 and described 4th metal-oxide-semiconductor field effect transistor Q4 cut-off. Now, described first metal-oxide-semiconductor field effect transistor Q1 and described second metal-oxide-semiconductor field effect transistor Q2 is also switched off. Described bridge rectifier M1 quits work, and late-class circuit can not receive the driving voltage being converted to by the alternating voltage inputted.
It should be noted that four metal-oxide-semiconductor field effect transistors in described overvoltage crowbar can be enhancement mode MOSFET, it is also possible to be depletion mode MOSFET. Further, the source electrode of aforementioned four metal-oxide-semiconductor field effect transistor and drain electrode can be exchanged, the invention is not limited in this regard.
The present embodiment controls the break-make between input signal and late-class circuit by four metal-oxide-semiconductor field effect transistors, it is achieved that the overvoltage protection to late-class circuit, thus effectively avoiding because overvoltage causes the damage to Implanted active electronic medical treatment device.
Second embodiment
Present embodiments provide a kind of technical scheme of Implanted active electronic medical treatment device. In this technical scheme, described Implanted active electronic medical treatment device can be implanted lesions located in deep brain device, implanted cortex stimulating apparatus, implanted spinal cord stimulation trial device, implanted Sacral nerve electrical stimulation device, or implanted vagus nerve electrical stimulation device. No matter being what type of device, described Implanted active electronic medical treatment device is the device of implanted human body, does not comprise any assembly beyond human body.
Core the most, described Implanted active electronic medical treatment device comprises the described overvoltage crowbar that second embodiment of the invention provides.By built-in overvoltage crowbar, described Implanted active electronic medical treatment device is it can be avoided that the component of self is caused damage by the overvoltage in wireless charging process.
In describing the invention, unless otherwise prescribed or illustrate, term " connection " should be interpreted broadly. Such as, " connection " can be directly connected to, it is also possible to is be indirectly connected with by intermediary. For the ordinary skill in the art, it is possible to understand above-mentioned term concrete meaning in the present invention as the case may be.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, to those skilled in the art, the present invention can have various change and change. Any amendment of making within all spirit in the present invention and principle, equivalent replacement, improvement etc., should be included within protection scope of the present invention.
Claims (7)
1. an overvoltage crowbar, it is characterized in that, including: the first metal-oxide-semiconductor field effect transistor, second metal-oxide-semiconductor field effect transistor, 3rd metal-oxide-semiconductor field effect transistor, 4th metal-oxide-semiconductor field effect transistor and bridge rectifier, one in the source electrode of described first metal-oxide-semiconductor field effect transistor and drain electrode is connected with first input end of described overvoltage crowbar, another is connected with first input end of described bridge rectifier, one in the source electrode of described second metal-oxide-semiconductor field effect transistor and drain electrode is connected with the second input terminal of described overvoltage crowbar, another is connected with the second input terminal of described bridge rectifier, one in the source electrode of the grid of described first metal-oxide-semiconductor field effect transistor and described 3rd metal-oxide-semiconductor field effect transistor and drain electrode is connected, another in the source electrode of described 3rd metal-oxide-semiconductor field effect transistor and drain electrode is connected with the ungrounded lead-out terminal of described bridge rectifier, one in the source electrode of the grid of described second metal-oxide-semiconductor field effect transistor and described 4th metal-oxide-semiconductor field effect transistor and drain electrode is connected, another in the source electrode of described 4th metal-oxide-semiconductor field effect transistor and drain electrode is connected with the ungrounded lead-out terminal of described bridge rectifier, and described 3rd metal-oxide-semiconductor field effect transistor is connected with the outfan of over-voltage detection circuit with the grid of described 4th metal-oxide-semiconductor field effect transistor.
2. overvoltage crowbar according to claim 1; it is characterized in that; the grid of described first metal-oxide-semiconductor field effect transistor is in series with the first current-limiting resistance with between source electrode or the drain electrode of the 3rd metal-oxide-semiconductor field effect transistor being attached thereto, and the grid of described second metal-oxide-semiconductor field effect transistor is in series with the second current-limiting resistance with between source electrode or the drain electrode of the 4th metal-oxide-semiconductor field effect transistor being attached thereto.
3. overvoltage crowbar according to claim 2, it is characterised in that be parallel with the first protection electric capacity between two input terminals of the input port of described bridge rectifier.
4. overvoltage crowbar according to claim 2, it is characterised in that be parallel with the second protection electric capacity between two lead-out terminals of the output port of described bridge rectifier.
5. the overvoltage crowbar according to claim 3 or 4; it is characterized in that; if described over-voltage detection circuit is not detected by overvoltage; then described 3rd metal-oxide-semiconductor field effect transistor and described 4th metal-oxide-semiconductor field effect transistor conducting; if and described over-voltage detection circuit detects overvoltage, then described 3rd metal-oxide-semiconductor field effect transistor and described 4th metal-oxide-semiconductor field effect transistor cut-off.
6. overvoltage crowbar according to claim 5, it is characterised in that described bridge rectifier is single-phase bridge rectifier.
7. an Implanted active electronic medical treatment device, it is characterised in that described Implanted active electronic medical treatment device includes the arbitrary described overvoltage crowbar of claim 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511018559.8A CN105655970A (en) | 2015-12-30 | 2015-12-30 | Overvoltage protection circuit and implantable active electronic medical device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511018559.8A CN105655970A (en) | 2015-12-30 | 2015-12-30 | Overvoltage protection circuit and implantable active electronic medical device |
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| CN105655970A true CN105655970A (en) | 2016-06-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201511018559.8A Pending CN105655970A (en) | 2015-12-30 | 2015-12-30 | Overvoltage protection circuit and implantable active electronic medical device |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203367976U (en) * | 2013-08-15 | 2013-12-25 | 济南飞越机电科技有限公司 | Pan and tilt overvoltage protection system |
| TW201530957A (en) * | 2013-11-08 | 2015-08-01 | Zentr Mikroelekt Dresden Gmbh | Arrangement and method for protecting an electronic circuit |
| US20150306383A1 (en) * | 2014-04-23 | 2015-10-29 | Medtronic, Inc. | Overvoltage protection circuitry |
| CN205360245U (en) * | 2015-12-30 | 2016-07-06 | 苏州景昱医疗器械有限公司 | Active electron medical devices of overvoltage crowbar and implanted |
-
2015
- 2015-12-30 CN CN201511018559.8A patent/CN105655970A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203367976U (en) * | 2013-08-15 | 2013-12-25 | 济南飞越机电科技有限公司 | Pan and tilt overvoltage protection system |
| TW201530957A (en) * | 2013-11-08 | 2015-08-01 | Zentr Mikroelekt Dresden Gmbh | Arrangement and method for protecting an electronic circuit |
| US20150306383A1 (en) * | 2014-04-23 | 2015-10-29 | Medtronic, Inc. | Overvoltage protection circuitry |
| CN205360245U (en) * | 2015-12-30 | 2016-07-06 | 苏州景昱医疗器械有限公司 | Active electron medical devices of overvoltage crowbar and implanted |
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Application publication date: 20160608 |