CN105655362A - Crosstalk preventive image sensor - Google Patents
Crosstalk preventive image sensor Download PDFInfo
- Publication number
- CN105655362A CN105655362A CN201410727760.2A CN201410727760A CN105655362A CN 105655362 A CN105655362 A CN 105655362A CN 201410727760 A CN201410727760 A CN 201410727760A CN 105655362 A CN105655362 A CN 105655362A
- Authority
- CN
- China
- Prior art keywords
- photorectifier
- pole
- dark
- image sensor
- photosensitive unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention discloses a crosstalk preventive image sensor. The image sensor comprises a pixel structure array of a substrate and leads formed on the substrate. Each pixel structure comprises a photosensitive unit and a deep photodiode which is arranged surrounding the photosensitive unit and isolated from the photosensitive unit, the N pole of the deep photodiode is connected with the lead, and the deep photodiode is used to receive photocarriers overflowed by the photosensitive unit and remove the photocarriers via the lead. The image sensor uses the deep photodiodes to isolate the photosensitive units, the preparation difficulty of the deep photodiode is lower than that of a traditional shallow trench isolation structure, and thus, the image sensor is easier to realize and good in the isolation effect.
Description
Technical field
The present invention relates to imaging technique, especially relate to a kind of anti-crosstalk image sensor.
Background technology
No matter it is cmos image sensor, or ccd image sensor, it becomes more and more highly integrated. The size that the highly integrated result of this kind is each pixel in image sensor reduces. But it has been found that reduce along with the Pixel Dimensions of image sensor, the crosstalk between neighborhood pixels becomes very serious problem. In general, crosstalk produces from two different sources: (1) optics crosstalk is relevant to the ability on suitable photosensitive element by incident beam optical focus by its micro lens with above pixel; (2) cross talk of electrons is relevant with the ability assembling in photosensitive element the photocarrier (photocarriers) formed, and these photocarriers produce at first in photosensitive element.
At present, the photocarrier (electronics) of formation is not by the place one i.e. photosensitive element being gathered in its generation at first completely. This is because photo-generated carrier (photogeneratedcarriers) can be diffused in contiguous photosensitive structure. A kind of method of electric isolution neighborhood pixels arranges dark P-trap implanted region around each pixel. This kind of dark P-trap region is electrically connected to matrix current potential respectively, and by isolated to each pixel and other pixel. But, a shortcoming of this kind of method is, some incident photons, the especially relatively photon of long wavelength, can produce electronics in the deep layer of silicon photoreceptor element.
In order to avoid the photon signal losing relatively long wavelength, the doped with P of photosensitive element-type regional compare is dark, and general requirement epitaxial film (epitaxiallayer) thickness is greater than 4 microns. This makes the dark P-trap of isolation generally also be greater than 4 microns, and this needs the B11 of about 2.4 million electron voltss (MeV) to implant, and this will need the photoresist material thickness of about 8 microns further. But, the geometric pattern that thick photoresist material can not be formed.
A kind of enforcement mode of currently available technology is, is being less than between each pixel of 3 microns to be provided with the interval of about 0.4 micron. Generally, the maximum gauge that can be used for being formed the photoresist material of 0.4 micron of opening (opening) is about 2 microns. But, B11 implantation can only be latched to beta maximum energy and be about 600 kiloelectron-volts (KeV) (or depth of penetration of about 1 micron) by the photoresist material of 2 micron thickness.And only 1 micron of dark P-trap isolation can not isolate each pixel completely. In addition, the thickness of light dope is the susceptibility that the epitaxial film of 1 micron will reduce quantum yield and image sensor. Therefore, prior art is not fully effective, thus is necessary to provide the technique of a kind of improvement.
Summary of the invention
The present invention is intended to one of technical problem at least solving existence in prior art. For this reason, the present invention needs to provide a kind of.
Anti-crosstalk image sensor according to embodiment of the present invention, it comprises the pel array comprising substrate and the wire being formed in substrate. Described substrate is formed with pixel structure array, pixel structure described in each comprise photosensitive unit and around described photosensitive unit but with described photosensitive unit isolation arrange dark photorectifier. The N pole of described dark photorectifier is connected with described wire, described dark photorectifier for receive described photosensitive unit overflow photocarrier and by described wire remove described photosensitive unit overflow photocarrier.
The image sensor of better embodiment of the present invention utilizes described dark photorectifier to isolate described photosensitive unit, and owing to described dark photorectifier manufacture difficulty is low relative to traditional deep trench isolation structure, therefore, relatively easily realization and isolation effect are good.
In some embodiments, image sensor as claimed in claim 1, it is characterised in that, the degree of depth of described dark photorectifier is greater than the degree of depth of described photosensitive unit.
In some embodiments, the ratio of the degree of depth of described dark photorectifier and the degree of depth of described photosensitive unit is more than or equal to 2.
In some embodiments, the ratio of the area of described photosensitive unit and the area of described pixel structure is 0.44-0.56, and the ratio of the area of the area of described photosensitive unit and described dark photorectifier is 25-81.
In some embodiments, the described dark photorectifier of pixel described in each is closed hoop.
In some embodiments, described dark photorectifier comprises along the stacking successively lower P pole of the depth direction of described substrate, N pole and upper P pole, described upper P pole and described lower P pole ground connection.
In some embodiments, the described upper P pole of the described dark photorectifier phase of adjacent two described pixel structures is connected with described upper P pole, described N pole is connected with described N pole, described lower P pole is connected with described lower P pole.
In some embodiments, described substrate also comprises the P type substrate being positioned at below described photosensitive unit and described dark photorectifier.
In some embodiments, distance between described dark photorectifier and described P type substrate is less than 1 micron.
In some embodiments, described pel array also comprises the metal interconnection layer being formed in substrate, described wire is formed at described metal interconnection layer, described metal interconnection layer is also formed with anti-dazzle light pipe and the anti-dazzle control line of array, described anti-dazzle light pipe is MOS pipe, the described N pole of described dark photorectifier is connected with the drain electrode of described anti-dazzle light pipe, the source electrode of described anti-dazzle light pipe is connected to described wire, and described anti-dazzle control line is connected the switch state for controlling described anti-dazzle light pipe with the grid of described anti-dazzle light pipe.
The additional aspect of the present invention and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by the practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or the additional aspect of the present invention and advantage from accompanying drawing below combining to the description of the mode of enforcement becoming obviously with it should be readily understood that wherein:
Fig. 1 is the block diagram of the image sensor of better embodiment of the present invention.
Fig. 2 is the schematic top plan view of the pel array of the image sensor of better embodiment of the present invention.
Fig. 3 is the schematic cross-section of the pel array of the image sensor of better embodiment of the present invention.
Fig. 4 is the circuit diagram of the pixel structure of the pel array of the image sensor of better embodiment of the present invention.
Embodiment
Being described below in detail embodiments of the present invention, the example of described enforcement mode is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish. It is exemplary below by the enforcement mode being described with reference to the drawings, only for explaining the present invention, and limitation of the present invention can not be interpreted as.
In describing the invention, it is to be understood that term " first ", " the 2nd " are only for describing object, and can not be interpreted as instruction or hint relative importance or imply the quantity indicating indicated technology feature. Thus, be limited with " first ", the feature of " the 2nd " can express or implicit comprise one or more described features. In describing the invention, the implication of " multiple " is two or more, unless otherwise expressly limited specifically.
In describing the invention, it is necessary to explanation, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection " should be interpreted broadly, such as, it is possible to be fixedly connected with, it is also possible to be removably connect, or connect integratedly; Can be mechanically connected, it is also possible to be electrically connected or can intercom mutually; Can be directly be connected, it is also possible to be indirectly connected by intermediary, it is possible to be the connection of two element internals or the interaction relationship of two elements. For the ordinary skill in the art, it is possible to understand above-mentioned term concrete implication in the present invention according to particular case.
Disclosing hereafter provides many different enforcement modes or example is used for realizing the different structure of the present invention. In order to simplify disclosing of the present invention, hereinafter parts and setting to specific examples are described. Certainly, they are only example, and object is not restriction the present invention. In addition, the present invention can in different example repeat reference numerals and/or with reference to letter, this kind repeats to be to simplify and clearly object, itself do not indicate the relation between discussed various enforcement mode and/or setting. In addition, various specific technique that the present invention provides and the example of material, but those of ordinary skill in the art can recognize the application of other techniques and/or the use of other materials.
Referring to Fig. 1, the image sensor 100 of better embodiment of the present invention comprises pel array 10, row buffer memory unit 20, row decoding unit 30, analog processing circuit unit 40, D/A converting circuit unit 50 and imaging signal processing circuit 60.
Pel array 10 is for collecting optical signal, and optical signal is changed into the electrical signal being directly proportional with light intensity. So, it is possible to object is changed into electrical signal by the optics image of pick-up lens on pel array 10. Row buffer memory unit 20 is for gathering and the electrical signal of output pixel array 10 generation. Row decoding unit 30 is for controlling the exposure of pel array 10. Analog processing circuit 40 for the treatment of and amplify the electrical signal that collects of row buffer memory unit 20. Analog to digital conversion circuit 50 is for converting numerary signal to simulating signal. Imaging signal processing circuit 60, for numerary signal processes the brightness regulating image, exposes, the parameters such as white balance.
Pel array 10 can comprise 2,000,000 pixels, 3,000,000 pixels, 5,000,000 pixels, 1,000 ten thousand pixels or more or less pixel. Referring to Fig. 2-3, in the present embodiment, for helping that concrete structure is described, pel array 10 comprises the pixel 10p of 3*3 array.
Pel array 10 comprises substrate 11. Substrate 11 is semiconductor material, such as, and extension doped with P type silicon on heavily doped P-type silicon. The substantially rectangular sheet of substrate 11, and comprise upper surface 111 and lower surface 112.
Pel array 10 comprises by carrying out the pixel structure 113 of the 3*3 array that As or P ion are implanted substrate 11 and formed by the integrated circuit fabrication process such as photoetching, injection, diffusion at upper surface 111 and be positioned at the P type substrate 114 of substrate 11 bottom. Pel array 10 also comprises the metal interconnection layer 12, colored filter 13 and the micro mirror array 14 that are formed on upper surface 111 by integrated circuit fabrication process.
In present embodiment, each pixel structure 113 comprises photosensitive unit 1131 and dark photorectifier 1132. Dark photorectifier 1132 is around photosensitive unit 1131 but isolates setting with photosensitive unit 1131.
Photosensitive unit 1131 is generally photorectifier, and surveys the intensity of light entering respective pixel 10p for feeling and be converted into photocarrier. So, by arranging photosensitive unit 1131, object can be changed into electrical signal by the optical imagery of pick-up lens by pel array 10.
Dark photorectifier 1132 is the degree of depth photorectifier dark compared with photosensitive unit 1131, and except producing except photocarrier by light sensing, dark photorectifier 1131 can also light conducting current carrier.
So, local luminance too high cause photosensitive unit 1131 that certain pixel 10p is corresponding saturated and when causing photocarrier to overflow, dark photorectifier 1132 can receive, absorb light current carrier, and photocarrier can not be caused to be crosstalked into adjacent photosensitive unit 1131, play isolation effect between pixel 10p, thus avoid glare phenomenon and crosstalk phenomenon to produce.
Dark photorectifier 1131 comprises depth direction stacking lower P pole, N pole and the upper P pole successively along substrate 11.
Concrete, pixel structure 113 is substantially rectangular, and photosensitive unit 1131 is also substantially rectangular, and described dark optical diode 1132 is the rectangular ring structure around photosensitive unit 1131 (being continuous closed hoop).
For convenience of manufacturing, the dark photorectifier 1132 of adjacent pixel structure 113 is connected. Above P pole is connected concrete adjacent two with upper P pole, N pole is connected with N pole, lower P pole is connected with lower P pole. Also that is to say, adjacent pixel structure 113 shares same photorectifier 1132.
Certainly, dark photorectifier 1132 is not limited to present embodiment, and in other embodiments, when ensureing isolation effect, dark photorectifier 1132 can also be the isolating construction around photosensitive unit 1131, and discrete ring-type. The dark photorectifier 1132 of adjacent pixel structure 113 can also be separated and arrange to realize specific effect.
P type substrate 114 can be substrate 11 extension doped with P type silicon on remaining heavily doped P-type silicon after integrated circuit fabrication process, the photocarrier that P type substrate 114 can receive equally, absorb photosensitive unit 1131 overflows.
For ensureing the opening rate of pixel 10p, in present embodiment, the size of pixel structure 113 is at 6 microns, and the size of photosensitive unit 1131 is at 4-4.5 microns, and the size of dark photorectifier 1132 is at 0.5-0.8 microns.Or saying, the ratio of the area of photosensitive unit 1131 and the area of pixel structure 113 is 0.44-0.56, and the ratio of the area of the area of photosensitive unit 1131 and dark photorectifier 1132 is 25-81.
In order to ensure isolation effect, the ratio of the degree of depth of dark photorectifier 1132 and the degree of depth of photosensitive unit 1131 is more than or equal to 2. Such as, the degree of depth of photosensitive unit 1131 is at 1 microns, and the degree of depth of dark photorectifier 1132 is at 2 microns.
In order to increase isolation effect, dark photorectifier 1132 is less than 1 micron with the distance of P type substrate 114. In addition, the thickness of P type substrate 114 is at 3 microns.
Certainly, the concrete size of pixel structure 113 is not limited to present embodiment, can adopt other size in other modes depending on demand.
Seeing also Fig. 4, metal interconnection layer 12 can be formed with the switching tube (MOSFET pipe) of the various electrical signal control produced by pel array 10, such as, and transfer tube tx, reset transistor rst, source follower sf, selection pipe sel and anti-dazzle light pipe tx0. Metal interconnection layer 12 can also be formed with various control line, such as, and transmission gate control line TX, reseting controling signal line RST, row gating control line SEL and anti-dazzle control line TX0. Metal interconnection layer 12 also includes wire Vddp and output line Vout.
The control signal of transmission gate control line TX, reseting controling signal line RST, row gating control line SEL and anti-dazzle control line TX0 accesses the grid of transfer tube tx, reset transistor rst, selection pipe sel and anti-dazzle light pipe tx0 respectively, with the switch state of controls transfer pipe tx, reset transistor rst, selection pipe sel and anti-dazzle light pipe tx0. Wherein, transmit gate control line TX, reseting controling signal line RST, row gating control line SEL and it is used for controlling the exposure of pel array 10 and signals collecting etc. And anti-dazzle light pipe tx0 closes, then anti-dazzle function starts, and dark photorectifier 1132 connects wire Vddp, and wire Vddp can be connected with power supply, continuously dark photorectifier 1132 is carried out by power supply empty clearly, thus make dark photorectifier 1132 be in fixing electromotive force.
Concrete, anti-dazzle light pipe tx0 is MOS pipe, the N pole of photorectifier 1132 is connected with the drain electrode of anti-dazzle light pipe tx0, and the source electrode of anti-dazzle pipe tx0 is connected with wire Vddp, and anti-giddy light by dominated line TX0 is connected the switch state for controlling anti-dazzle light pipe tx0 with the grid of anti-dazzle pipe tx0.
In present embodiment, filter unit 131 that is that colored filter 13 includes array and that be directed at pixel structure 113 respectively. Filter unit 131 by red turquoise three kinds, and can be arranged by pattra leaves (Byer).
Micro-mirror 141 that micro mirror array 14 includes array and is directed at pixel structure 113 respectively, for being refracted into the light injecting respective pixel structure 113, thus improves the light sensitivity of pel array 10.
The image sensor 100 of better embodiment of the present invention utilizes dark photorectifier 1132 to isolate photosensitive unit 1131, owing to dark photorectifier 1132 manufacture difficulty is low relative to traditional deep trench isolation structure, therefore, relatively easily realization and isolation effect are good, it is possible to prevent crosstalk between pixel 10p.
In the description of this specification sheets, the description of reference term " implement mode ", " some implement mode ", " exemplary embodiment ", " example ", " concrete example " or " some examples " etc. means at least one enforcement mode that the concrete feature in conjunction with described enforcement mode or example description, structure, material or feature be contained in the present invention or example.In this manual, the schematic representation of above-mentioned term is not necessarily referred to identical enforcement mode or example. And, the concrete feature of description, structure, material or feature can combine in an appropriate manner in any one or more enforcement mode or example.
Although it has been shown and described that embodiments of the present invention, it will be understood by those skilled in the art that: these enforcement modes can be carried out multiple change, amendment, replacement and modification when not departing from principle and the objective of the present invention, the scope of the present invention by claim and etc. jljl limit.
Claims (10)
1. an anti-crosstalk image sensor, it is characterised in that, comprise
Comprising the pel array of substrate, described substrate is formed with pixel structure array, described in each, pixel structure comprises:
Photosensitive unit; And
Around described photosensitive unit but with described photosensitive unit isolation arrange dark photorectifier; And
The wire being formed in described substrate;
The N pole of described dark photorectifier is connected with described wire, described dark photorectifier for receive described photosensitive unit overflow photocarrier and by described wire remove described photosensitive unit overflow photocarrier.
2. image sensor as claimed in claim 1, it is characterised in that, the degree of depth of described dark photorectifier is greater than the degree of depth of described photosensitive unit.
3. image sensor as claimed in claim 1, it is characterised in that, the ratio of the degree of depth of described dark photorectifier and the degree of depth of described photosensitive unit is more than or equal to 2.
4. image sensor as claimed in claim 1, it is characterised in that, the ratio of the area of described photosensitive unit and the area of described pixel structure is 0.44-0.56, and the ratio of the area of the area of described photosensitive unit and described dark photorectifier is 25-81.
5. image sensor as claimed in claim 1, it is characterised in that, the described dark photorectifier of pixel described in each is closed hoop.
6. image sensor as claimed in claim 1, it is characterised in that, described dark photorectifier comprises along the stacking successively lower P pole of the depth direction of described substrate, N pole and upper P pole, described upper P pole and described lower P pole ground connection.
7. image sensor as claimed in claim 6, it is characterised in that, the described upper P pole of the described dark photorectifier phase of adjacent two described pixel structures is connected with described upper P pole, described N pole is connected with described N pole, described lower P pole is connected with described lower P pole.
8. image sensor as claimed in claim 1, it is characterised in that, described substrate also comprises the P type substrate being positioned at below described photosensitive unit and described dark photorectifier.
9. image sensor as claimed in claim 8, it is characterised in that, the distance between described dark photorectifier and described P type substrate is less than 1 micron.
10. image sensor as claimed in claim 1, it is characterized in that, described pel array also comprises the metal interconnection layer being formed in substrate, described wire is formed at described metal interconnection layer, described metal interconnection layer is also formed with anti-dazzle light pipe and the anti-dazzle control line of array, described anti-dazzle light pipe is MOS pipe, the described N pole of described dark photorectifier is connected with the drain electrode of described anti-dazzle light pipe, the source electrode of described anti-dazzle light pipe is connected to described wire, and described anti-dazzle control line is connected the switch state for controlling described anti-dazzle light pipe with the grid of described anti-dazzle light pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410727760.2A CN105655362B (en) | 2014-12-03 | 2014-12-03 | Anti-crosstalk imaging sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410727760.2A CN105655362B (en) | 2014-12-03 | 2014-12-03 | Anti-crosstalk imaging sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105655362A true CN105655362A (en) | 2016-06-08 |
| CN105655362B CN105655362B (en) | 2018-12-21 |
Family
ID=56481423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410727760.2A Active CN105655362B (en) | 2014-12-03 | 2014-12-03 | Anti-crosstalk imaging sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105655362B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112103301A (en) * | 2019-06-17 | 2020-12-18 | 比亚迪股份有限公司 | Image sensor, terminal, and method for manufacturing image sensor |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050035375A1 (en) * | 2002-11-14 | 2005-02-17 | Kiyoshi Hirata | Solid-state imaging device and method for manufacturing the same |
| CN1697493A (en) * | 2004-05-13 | 2005-11-16 | 佳能株式会社 | Solid-state image pickup device and camera using the same solid-state image pickup device |
| CN101150137A (en) * | 2006-09-20 | 2008-03-26 | 富士胶片株式会社 | Back lighting imaging device and manufacturing method thereof, semiconductor substrate and imaging device |
| CN101211947A (en) * | 2006-12-27 | 2008-07-02 | 东部高科股份有限公司 | CMOS image sensor and method for manufacturing the same |
| WO2006073798A3 (en) * | 2004-12-30 | 2009-04-09 | Ess Technology Inc | Method and apparatus for controlling charge transfer in cmos sensors with a transfer gate work function |
| CN102301473A (en) * | 2009-02-06 | 2011-12-28 | 佳能株式会社 | Photoelectric conversion apparatus and manufacturing method for a photoelectric conversion apparatus |
| CN103035661A (en) * | 2011-10-07 | 2013-04-10 | 佳能株式会社 | Photoelectric conversion device and imaging system |
| US20140084409A1 (en) * | 2012-09-25 | 2014-03-27 | Aptina Imaging Corporation | Image sensors with in-pixel anti-blooming drains |
| CN103811512A (en) * | 2014-03-17 | 2014-05-21 | 北京思比科微电子技术股份有限公司 | Image sensor pixel structure for preventing image diffusion and manufacture method thereof |
-
2014
- 2014-12-03 CN CN201410727760.2A patent/CN105655362B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050035375A1 (en) * | 2002-11-14 | 2005-02-17 | Kiyoshi Hirata | Solid-state imaging device and method for manufacturing the same |
| CN1697493A (en) * | 2004-05-13 | 2005-11-16 | 佳能株式会社 | Solid-state image pickup device and camera using the same solid-state image pickup device |
| WO2006073798A3 (en) * | 2004-12-30 | 2009-04-09 | Ess Technology Inc | Method and apparatus for controlling charge transfer in cmos sensors with a transfer gate work function |
| CN101150137A (en) * | 2006-09-20 | 2008-03-26 | 富士胶片株式会社 | Back lighting imaging device and manufacturing method thereof, semiconductor substrate and imaging device |
| CN101211947A (en) * | 2006-12-27 | 2008-07-02 | 东部高科股份有限公司 | CMOS image sensor and method for manufacturing the same |
| CN102301473A (en) * | 2009-02-06 | 2011-12-28 | 佳能株式会社 | Photoelectric conversion apparatus and manufacturing method for a photoelectric conversion apparatus |
| CN103035661A (en) * | 2011-10-07 | 2013-04-10 | 佳能株式会社 | Photoelectric conversion device and imaging system |
| US20140084409A1 (en) * | 2012-09-25 | 2014-03-27 | Aptina Imaging Corporation | Image sensors with in-pixel anti-blooming drains |
| CN103811512A (en) * | 2014-03-17 | 2014-05-21 | 北京思比科微电子技术股份有限公司 | Image sensor pixel structure for preventing image diffusion and manufacture method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112103301A (en) * | 2019-06-17 | 2020-12-18 | 比亚迪股份有限公司 | Image sensor, terminal, and method for manufacturing image sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105655362B (en) | 2018-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106783898B (en) | Image sensor with a plurality of pixels | |
| CN105895650B (en) | Solid-state imaging apparatus and electronic equipment | |
| US20160218138A1 (en) | Solid-state image pickup device and method for manufacturing a solid-state image pickup device | |
| CN104981906B (en) | Solid state image sensor, its manufacture method and electronic equipment | |
| CN104253952B (en) | Solid state image pickup device and its driving method and electronic equipment | |
| TWI493695B (en) | Back illuminated sensor with low crosstalk | |
| KR101443438B1 (en) | Backside illuminated cmos image sensor | |
| CN104517983B (en) | Solid state image pickup device, its manufacture method and imaging system | |
| JP2016127264A (en) | Solid state image sensor, manufacturing method of the same, and electronic apparatus | |
| US20130026548A1 (en) | Image sensor with controllable vertically integrated photodetectors | |
| KR102494604B1 (en) | Image sensor | |
| KR20110123667A (en) | Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus | |
| JP2006073682A (en) | Solid-state imaging element, camera module, and electronic equipment module | |
| KR20070000578A (en) | Separation type unit pixel of image sensor having 3 dimension structure and manufacture method thereof | |
| US8829637B2 (en) | Image sensor with controllable vertically integrated photodetectors using a buried layer | |
| JP2015115345A (en) | Solid-state imaging device | |
| TW201813067A (en) | Photogate for front-side-illuminated infrared image sensor and method of manufacturing the same | |
| KR20080104859A (en) | Multi-well cmos image sensor and method of fabricating the same | |
| WO2016104177A1 (en) | Solid-state image capture element, method for manufacturing same, and electronic component | |
| WO2010068249A1 (en) | Trench isolation regions in image sensors | |
| US20080296475A1 (en) | Vertical image sensors and methods of fabricating the same | |
| CN106952931B (en) | A kind of manufacturing method of cmos image sensor | |
| KR20150104098A (en) | Imaging device | |
| CN102723349A (en) | CMOS (Complementary Metal-Oxide-Semiconductor Transistor) image sensor with isolation layer and manufacturing method thereof | |
| CN105655362A (en) | Crosstalk preventive image sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191204 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: Shenzhen BYD Microelectronics Co., Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: Biyadi Co., Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP03 | Change of name, title or address |
Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kwai Chung street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
|
| CP03 | Change of name, title or address |