CN105655219B - Ion implantation method and system for increasing wafer ion implantation dose ratio - Google Patents
Ion implantation method and system for increasing wafer ion implantation dose ratio Download PDFInfo
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- CN105655219B CN105655219B CN201510610693.0A CN201510610693A CN105655219B CN 105655219 B CN105655219 B CN 105655219B CN 201510610693 A CN201510610693 A CN 201510610693A CN 105655219 B CN105655219 B CN 105655219B
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 31
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 100
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- 239000007943 implant Substances 0.000 claims description 82
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Abstract
The invention provides an ion implantation method and system for improving the dose ratio of wafer ion implantation, which can achieve high-contrast dose implantation by scanning only a part of the wafer with an ion beam. The method comprises the following steps: providing a wafer and an ion beam, wherein the wafer is provided with at least one implanted region and at least one non-implanted region; and scanning the ion beam across the wafer with at least one traversing step, wherein the traversing step scans the ion beam only across the implanted region and not across the non-implanted region.
Description
【Technical field】
The present invention relates to ion implant method and systems, particularly promote the ion implant of wafer ion implantation dose ratio
Method and system.
【Background technology】
Ion implant is to introduce admixture to enter workpiece such as semiconductor crystal wafer to change the standard technique of workpiece material property.
Required admixture is the ion from ion source, is accelerated to scheduled energy to form ion beam, ion beam is then by guiding
Implanted region on to crystal column surface.The processing procedure of ion implant involves physics, chemistry and machinery with the technologies such as automatically controlling.When
The integration of IC wafers is continuously improved, size of components persistently reduces and modular construction develops towards three-dimensional direction,
The processing procedure of ion implant also more becomes to complicating.
Conventional ion cloth planting technology system makes every effort to introduce the admixture of uniform dose on whole wafer surface, but in recent years gradually have
The demand of the admixture of various dose is introduced in the surface different piece of same wafer.For example, with the increasing of wafer size
Add, uneven result occurs in etching, chemical mechanical grinding or thin film deposition process carried out before and after ion implant etc.
Chance increases therewith, and non-uniform ion implantation can often improve or even offset these uneven results to total system
The influence of journey and/or final products.For example, it with semiconductor integrated circuit size reduction and the trend of three-dimensional, is producing
It is different with during process parameter confirmation, more needing to carry out crystal grain (different zones) different on wafer that product design and develop process
The implant of dosage is used and finds out the ion implantation parameters value best to overall processing procedure and/or final products.
Fig. 1 shows traditional two-dimensional implant scanning technique, is a kind of how to be introduced in same wafer different piece
The common practice of the admixture of various dose.As shown in Figure 1, it is mixed with what the introducing dosage only in certain parts of single wafer was not zero
For the situation of matter, the wafer 10 of script blank is moved through ion beam 12 to be formed by wafer carrying mechanism along scanpath 11
Wafer 10a with lateral strip implanted region.The implant dosage control of the lateral strip implanted region of difference of wafer 10a then may be used
Reach through wafer movement speed is changed.In this 11 system of scanpath by multiple transverse shifting approach and multiple longitudinal movement approach
It is formed, transverse shifting approach and the short side of ion beam 12 are substantially parallel, and the long side for vertically moving approach and ion beam 12 is big
It causes parallel.Since scanpath 11 is equally distributed, ion beam 12 can be scanned by whole wafer 10, but in scanpath
During 11 different piece, the rate of wafer bearing device movement wafer 10 can be different, and wafer 10 needs implantation dosage higher
Rate of the part when being moved through ion beam 12 it is slower, otherwise the part that wafer 10 needs implantation dosage lower is being moved
Rate when moving through ion beam 12 is faster, and the part that implantation dosage is not needed on wafer 10 is being moved through ion beam 12
When rate will be most fast.
Fig. 2, which is shown, scans formed dosage striped schematic diagram with conventional ion implant.It is entire to cover due to wafer system
The scanpath 11 of wafer 10 moves, and is only capable of the implant dosage of control implanted region at this time, and cannot exclude neighbouring implanted region
Between dosage interference.Briefly, since practical ion beam is all to be adjusted to its cross sectional current to be distributed as Gaussian Profile
Or the intermediate gradual low distribution in uniform two side, when ion beam is used to scan certain implantation region on wafer, unavoidable ion Shu Heng
The peripheral part of section current distribution can also scan adjacent implanted region.As shown in Fig. 2, there are five being had altogether on wafer 10b
Implanted region 14a~14e and four additional implanted region 13a~13d.Due to wafer to cover the scanning of whole wafer 10
Approach 11 moves, and occurs additional implanted region 13a between the implanted region 14a and 14b on wafer 10b, implanted region 14b with
Equally occur additional implanted region 13b, additional implanted region 13c and 13d between 14c and be then located at implanted region 14c and 14d respectively
And between implanted region 14d and 14e.
Fig. 1 is tied up under conditions of wafer does not rotate with implanted region with ion implant shown in Fig. 2 scanning and is completed.Work as wafer
Seem laterally to be moved at front and rear two if also carrying out the rotation of predetermined angular during covering the movement of the scanpath 11 of whole wafer 10
The rotation that wafer is also rotated to a predetermined angular between dynamic process (or is considered as and also turns wafer in the process vertically moved every time
Move the rotation of a predetermined angular), it can also form other shapes of implanted region other than shape of stripes.Fig. 3 shows wafer with Fig. 1
Shown scanpath 11, with just being rotated once before next transverse shifting after each transverse shifting, lateral in total
At least 16 times are moved to scan the two circular annular form implanted regions formed when the process of whole wafer also rotates at least 16 times.With
Shape of stripes implanted region is identical, and due to being only capable of by wafer movement speed adjustment implant dosage is changed, equally meeting implant is additional
Dosage is in cyclic annular implanted region close position.Here, wafer is moved through ion beam 12 totally 16 with scanpath 11 shown in FIG. 1
Secondary and sequentially rotation 16 times (every time 22.5 degree), due to wafer rate travel when scanning is by different lateral strip implanted regions
And it is unequal, respectively high dose and two cyclic annular the implanted region 102b and 102c in low dosage region will be formed on wafer,
And therebetween additional low dosage implanted region 102a.
For the atomic small and accurate integrated circuit manufacture process of size of components, the correct agent of upper implant in correct position
Amount belongs to imperative.When positions multiple on wafer need different implant dosage, possible implant dosage between different location
Difference ratio will be limited by ion implantation system hardware limit.The position of high implant dosage is needed on wafer, driving wafer is held
Mounted mechanism needs the position of low dosage to make wafer need be at low speed along the motor that scanpath moves on wafer
Putting motor then need be to run at high speed.It is apparent that the ratio between flank speed and minimum speed that motor can operate determines
Whether the demand of various dose difference ratio can be satisfied between multiple spot position.If motor controllable speed ratio is N times,
Since speed and dosage are inversely proportional, i.e., it is also N times that motor highest, which can meet implantation height dose ratio,.Although promoting motor can transport
Rotary speed can increase height dose ratio, but cost is also substantially improved therewith with technical difficulty degree.
Therefore, there is an urgent need for propose it is a kind of it is high comparison dosage ion disposing process, with meet in Advanced Integrated Circuits processing procedure to from
The requirement of sub- implant processing procedure.
【Invention content】
The present invention breaks through limitation of the hardware to the speed of ion-beam scanning wafer under the conditions of tying up to same hardware, to reach
Reach maximum ion implant dose difference ratio between wafer different zones.
One embodiment of the present of invention is a kind of ion implant method for promoting wafer and dose ratio being ion implanted.First,
There is provided wafer and ion beam, wafer has at least one implanted region and at least one non-implantation region.The person of connecing, at least one horizontal stroke
Make ion-beam scanning wafer to moving step, wherein these transverse shifting steps make ion beam only scan through the implanted region
Without scanning through the non-implantation region.
In other embodiments of the invention, the height in ion beam cross-sectional face is less than diameter wafer.
In other embodiments of the invention, the method further includes at least one longitudinal movement step, any longitudinal direction
Moving step vertically moves wafer before being carried out after a transverse shifting step with next transverse shifting step.
This, wafer, which tends not to be scanned by ion beam, in these longitudinal movement step process passes through.
In other embodiments of the invention, the method further includes after a transverse shifting step with next horizontal stroke
Rotation wafer before being carried out to moving step.Here, rotational angle when rotating wafer every time is all often identical.
In other embodiments of the invention, implanted region is strip implanted region or implanted region is to turn through wafer
Four 90 degree of cross striped implanted region, window-like implanted region, square or rectangular implanted regions formed every time are moved,
Or implanted region rotates eight times or more the cyclic annular implanted regions formed by wafer.
One embodiment of the present of invention is a kind of ion implantation system (equipment), comprising providing the ion beam of ion beam
Assembly, to by wafer in the wafer carrying mechanism that moves in the plane interlocked with ion beam and to control ion beam total
Into the control unit that ion implant method is performed with wafer carrying mechanism.Here, ion implant method at least works as wafer at least
When having implanted region with non-implantation region, at least one transverse shifting step ion beam is only scanned through the implantation area
Domain is without scanning through the non-implantation region.
In other embodiments of the invention, the method further includes can program multiaxis control to control wafer carrying mechanism
Device processed.Here, can through input parameter value extremely can program multi-axis controller perform ion disposing process.
In other embodiments of the invention, the method further includes to acquire the sensor of ion beam information and
To perform scanpath distribution, comprising motor speed be distributed with omit scanning distribution, with find out meet wafer dosage distribution need
Seek the dosage emulator of parameter value.
In other embodiments of the invention, the ion beam cross-sectional face height that ion beam assembly is provided is less than the straight of wafer
Diameter.
In other embodiments of the invention, it is at least one vertical that control unit controls the ion implant method of execution to further include
To moving step.Herein any longitudinal movement step to after terminating in a transverse shifting step with next transverse shifting
Before step carries out, wafer is vertically moved.Here, control unit often so that wafer is not in these longitudinal movement step process
It can be scanned and pass through by ion beam.Here, control unit often after a transverse shifting step terminates with next transverse direction
Rotation wafer before moving step carries out.Here, rotational angle when control wafer often to rotate wafer every time is all phase
With.
【Description of the drawings】
Fig. 1 is the schematic diagram of traditional two-dimensional implant scanning technique.
The dosage striped schematic diagram that Fig. 2 is formed by ion implant shown in FIG. 1 scanning.
The two circular annular form implanted region schematic diagrames that Fig. 3 ion implant scannings shown in Fig. 1 are formed.
Fig. 4 is that the two-dimensional implant of one embodiment of the invention scans schematic diagram.
The dosage striped schematic diagram that Fig. 5 is formed by the ion implant scanning of one embodiment of the invention.
The round and/or cyclic annular implanted region schematic diagram that Fig. 6 is formed by the ion implant scanning of one embodiment of the invention.
The two circular annular form implanted region schematic diagrames that Fig. 7 is formed by the scanpath of one embodiment of the invention.
【Specific embodiment】
Some embodiments of the present invention will be described in as follows.These embodiments will be illustrated with schema.However, it removes
Except as described by following embodiment, the scope of the present invention is simultaneously not limited to the examples restriction.On the contrary, the present invention covers
Other replacement, modification and equivalent embodiments for meeting spirit of the invention and being defined with claim.In the following description, it carries
And many details are to well understand the present invention.The present invention can be implemented under conditions of some or all details are lacked.
In other cases, known system equipment will not be described in detail to obscure the present invention with process operations.
To provide the motor that power drive wafer is moved relative to ion beam highest can running speed transported with minimum
Ratio between kind speed, can determine the difference of the maximum dose level of different location and lowest dose level on wafer.Therefore habit is being used
When knowing the two-dimensional implant scanning of technology, since scanpath can cover whole wafer, the quilt on wafer between any region
Implant dose ratio, all can by motor can the range of running speed limited.As an example it is assumed that it can stablize there are one motor
Speed operating range is from 10 units to 60 units, that is, its controllable speed ratio is 6 times, because speed and dosage are into anti-
Than representing that the implant dosage ratio that wafer is taken up an official post between two implanted regions is up to 6 times.
The point of penetration of the present invention is scanned to omit, and is dispensed the two-dimensional implant scanning of known techniques and can be covered entire crystalline substance
A part for round scanpath.When the certain parts of wafer, required ion implant dosage is zero or is equivalent to adjacent portions
When the ion implant dosage divided is at a fairly low, just modification scanpath will not scan these parts by wafer by ion beam.
Due to these parts, there is no can be considered as ion beam infinity velocity scanning by ion-beam scanning, in physical significance to pass through wafer
The part, therefore these parts do not have the generation of any ion implant dosage.As an example it is assumed that there are one motors
Can steady running velocity interval from 10 units to 60 units, that is, its controllable speed ratio be 6 times, when known techniques apply horse
It, can be equivalent in physical significance when handled part wafer is completely no scanned in application invention during up to 60 unit of rotating speed
In infinitely fast with motor, it is close to infinity that will cause relative to the implant dose ratio of other parts on wafer, this is known
What technology can not be reached.
One big advantage of the omission scanning of the present invention is, without changing the hardware such as motor.Although promote motor running speed
The upper limit and reduce motor running speed lower limit, be the implant dose ratio that can improve different piece on wafer, but into
This also can non-linearly be promoted therewith with technical difficulty degree.The omission that the present invention scans can be obtained by following embodiments with discussion
It further appreciates that.
Fig. 4 shows two-dimensional implant scanning schematic diagram according to an embodiment of the invention.As shown in figure 4, in order in crystalline substance
Two lateral strip implanted regions are formed on circle 20, ion disposing process uses the scanpath with the feature for omitting scanning.Please
The difference of scanpath that especially relatively Fig. 4 and Fig. 1 is shown respectively.
Wafer 20 is moved through ion beam 22 by wafer carrying mechanism along scanpath 21 has two lateral strips to be formed
The wafer 20a of implanted region.The implant dosage control of the lateral strip implanted region of two of wafer 20a, which can penetrate, changes wafer
The rate of ion beam is moved through to reach, that is, can be considered and reach through the rate for changing ion-beam scanning wafer.Due to
Only need to be in two lateral strip implanted regions of formation on wafer 20, therefore the control unit control of ion implantation system drives wafer
Load carrier only causes the part that wafer 20 corresponds to this two lateral strip implanted region to be scanned by ion beam 22, that is, directly
Dispensing can be so that the partial scan approach that non-implantation region is scanned by ion beam 22 on wafer 20.Certainly, depending on practical need
Size of implant dosage, ion beam height and lateral strip implanted region wanted etc., any one lateral strip implanted region is all
May or it only correspond to a transverse shifting or correspond to multiple transverse shifting.Here, scanpath 21 is only horizontal comprising two groups
To planar movement, this two lateral strip implanted regions are corresponded to respectively, and the implant agent of this two lateral strip implanted regions
Amount is then by the motor running speed control of driving wafer carrying mechanism.Due to not allowing wafer in the scanpath 21 of the present embodiment
Be moved through the part of ion beam, there is no any ion by these parts of implant wafer 202, and can equivalently be considered as by
The part that this two lateral strip implanted regions are not corresponded in tradition scan path shown in FIG. 1 is all motor with infinity
Running speed drives wafer, because infinitely great wafer movement speed is to represent infinitely few ion by implant to wafer.Cause
This, the implant dosage in Fig. 4 on wafer 20 between non-implantation region and this two lateral strip implanted regions differs will be compared in Fig. 1
This two lateral strip implanted regions differ to come much with the implant dosage between wafer 10a other parts.
Fig. 5 shows that the high comparison dose ion implant with one embodiment of the invention scans formed dosage striped and illustrates
Figure.Since wafer system is to dispense the movement of the scanpath of the scanning of subregion, wafer different piece can not only be provided more
Big implant dosage comparison can also reduce the dosage interference between neighbouring implanted region.Please note that when ion beam will not scan it is logical
Cross certain specific parts of wafer, not only these specific parts do not have ion and are entered by implant, and with these specific parts
The part wafer of direct neighbor will not be distributed end by ion beam cross-sectional surface current to be interfered.As shown in figure 5, wafer 20b
Be less prone to additional implanted region between upper implanted region 24a-24e, can exclude between neighbouring implanted region dosage interference (
This is drawn completely without the ideal state of additional implanted region).
Feature for the omission scanning for reaching the above embodiment of the present invention, ion implantation system proposed by the present invention can be intended to
It carries out the wafer of implant and transverse shifting and longitudinal movement is carried out in the plane interlocked with ion beam with preset speed, by
Ion beam to be allowed only to scan by needing implant part in wafer without scanning the portion by not needing to standby implant in wafer
Point.Ion implantation system generally includes at least the ion beam assembly for providing ion beam, the vacuum where wafer progress ion implant
Reative cell, transmission wafer disengaging vacuum reaction chamber wafer transfer mechanism, carrying wafer and by wafer with ion beam interlock
Transverse shifting and the wafer carrying mechanism of longitudinal movement etc. are carried out in plane.Here, ion beam assembly generally comprises generation largely
The ion source (ion source) of ion and particular kind of ion is chosen from ion source and will be selected ion beam guiding
To the beamline components (beamline components) of target wafer to be implanted, such as it is used for selecting required ionic species and mistake
Filter unwanted ion and pollutant analyzer magnet, for ion beam reach target wafer before manipulate beam shape
Or in other ways adjust ion beam quality corrector magnet and for changing electrode of ion beam energy and shape etc.
Deng.Here, wafer transfer mechanism further includes to provide the motor of power drive wafer with wafer carrying mechanism.In these portions
Point, the present invention is not different from known techniques, that is, does not need to change any known existing hardware.
For the ion implantation system of the present invention generally also comprising control unit, using control wafer transfer mechanism passes in and out wafer
It vacuum reaction chamber and uses control wafer carrying mechanism and makes wafer with being carried out laterally and longitudinally on ion beam overlapped planes
It is mobile.Control unit often through implant control driven by program wafer carrying mechanism make the wafer being located in wafer carrying mechanism with
Wafer carrying mechanism is according to the speed and scanpath of setting (that is, the omission of the present invention scan scanpath).In this hair
Bright some embodiments, control unit is can program multi-axis controller (PMAC or programmable multi-axes
Controller), by modification can program multi-axis controller software and/or firmware can flexibly control wafer carrying machine
Structure etc. is used herein to realize, the hardware components without changing ion implantation system seem wafer transfer mechanism with
Motor (motor) etc. used in wafer carrying mechanism the two.Certainly, if only focus on omit scanning feature and can
Directly artificially to adjust the opposite scanpath of both ion beam and wafer by the operating personnel of ion implantation system.Obviously
Ground, between ion implantation system of the invention and the ion implantation system of known techniques, main difference is only that control unit
The control program loaded and the scanning phase client information loaded, as possible implant dose ratio can be restricted in known techniques
Motor etc., do not need to the replacement that makes an amendment.
The ion implantation system of the present invention more may include obtaining the sensor of ion beam feature.Ion beam feature includes
Ion beam current, ion beam energy, ion beam cross-sectional facial contour and the distribution of ion beam cross-sectional surface current etc..The ion of the present invention
Implantation system more may include dosage emulator, by the ion beam feature being applied to, then motor speed distribution be coordinated to be swept with omission
The analysis of distribution etc. is retouched, the analog result for meeting the distribution of wafer dosage can be obtained.It can according to this analog result
Input call parameter extremely can program multi-axis controller, use carry out with the present invention omit scanning feature it is certain only on wafer
Part forms the ion implantation process of implanted region.
The schematic diagram of circular annular form implanted region that Fig. 6 is formed by another embodiment of the present invention.Circular annular form to be formed
Implanted region 26c, other than transverse shifting wafer is by ion beam, before each transverse shifting wafer is by ion beam all
Wafer is first rotated into 22.5 degree of (fixed clockwise direction or fixed sides counterclockwise around ion beam direction of travel toward fixed-direction
To) so that ion beam all scans the different piece of wafer when each wafer passes through ion beam.Wafer is with what kind of transversal scanning
Approach is mobile and is rotated with what kind of angle and number, determines the implanted region geometry being eventually formed on wafer.
If merely transversely moving wafer but not rotating wafer, unconnected travers implanted region each other can be formed.If it laterally moves
90 degree of wafer is all rotated between every secondary transverse shifting again except dynamic wafer, just forms cross striped implant so repeatedly 4 times
Region, window-like implanted region, square implanted region or rectangle implanted region.Here, it can specifically form a kind of that implant
Region system regard the height of ion beam, the spacing of transversal scanning approach, transversal scanning approach the position of wafer etc. variable reality
Depending on the numerical value of border.If 120 degree of wafer is all rotated between every secondary transverse shifting again except transverse shifting wafer, so repeatedly
Just it is likely to form triangle implanted region 3 times.And so on, the number that rotation is repeated is more, even in every secondary horizontal stroke
The angle rotated between movement is smaller, and just there may be the implanted regions of more various shapes, in some instances it may even be possible to generate circle ring
The implanted region of shape.
Fig. 7 shows that wafer is moved with scanpath 21 shown in Fig. 4 and rotates an angle between every secondary transverse shifting
It is continuous at least by ion beam 22 when (or be considered as and rotate an angle in each longitudinal movement) rotates 16 times or 16 times or more altogether
At least 16 different pieces of 16 difference scanning wafers, the two circular annular form implanted regions formed.If wafer relative to
The rate travel of ion beam is when ion beam gets to this two travers implanted regions respectively and differs, and one fast one is slow, then
The two ring-type implanted region 202a formed on wafer and 202b will be respectively high dose and low dosage region.In general,
In will appear additional ultra low-volume implanted region 202c in wafer upper annular implanted region 202a.Cyclic annular cloth shown in third figure
Growing area domain is compared, during due to a transverse shifting in office ion beam will not all scan this two travers implanted regions it
Outside, be at most scanning by this two travers implanted regions when ion beam cross-sectional face on peripheral part (ion beam electricity
The weaker part of stream) wafer that can scan around this two travers implanted regions is not required to the part of implant, because
Implant dose difference between this circular annular form implanted region 202b/202b and additional ultra low-volume implanted region 202c will be bright
Become larger aobviously.
Compared with known techniques, since present invention system only allows ion-beam scanning to pass through wafer in a manner of omitting scanning
Part, therefore the implant dose ratio on wafer between different implanted regions can be considered as wafer rate travel when can be infinitely fast
(or be considered as motor rotary speed can be infinitely fast when) attainable highest implant dosage and minimum implant dosage ratio.Relatively
Ground, since known techniques are limited to hardware technology and cost consideration, such as the height speed ratio of motor is unable to reach infinity, example
Cost such as the motor of the high rotating speed upper limit is somewhat expensive, the implant between the different implanted regions that different piece generates on wafer
The comparison of dosage is centainly compared less than implant dosage between the attainable different implanted regions of present invention institute.
Supplementary explanation ground, no matter when carrying out transverse shifting or longitudinal movement, the velocity of rotation of motor must all control
In a certain range, motor drive power can be caused not catch up with setting value not enough soon very much, too slowly can because of friction or noise etc. and
It controls bad.If release motor rotary speed limitation, in motor can stablize will be presented except the velocity interval of running it is unstable
State, and will be unable to be properly implanted dosage according to instruction.Motor is lower outside height stabilized speed range to be difficult to control, be due to
Motor control is bound to optimize in center range speed and adjust, and become larger in high speed section inner motor driving force and can also make horse
Become larger up to amplitude of vibration, and motor will be made unstable in the fluctuating of low speed section internal friction power size, in addition driving force is also to maintain at this time
In low spot, likewise result in motor amplitude of vibration and become larger.Therefore, the slewing rate of motor is accelerated or slowed down if being only transmitted in practice,
The implant dosage comparison of different implanted regions is still quite limited on the wafer that can reach.Relatively, omission of the invention scanning
The practice, be equal to a certain extent it is no increase motor amplitude of vibration the problem of under by ion-beam scanning by being not required on wafer
The rotating speed of motor speeds unlimited fast during implanted region.It is apparent that the more conventional technology of the present invention can more promote wafer ion implantation
Dose ratio (in the ratio of the ion implant dosage of wafer different piece).
The present invention is to be revised as only covering in wafer by the uniform scanning approach for covering whole wafer in known techniques needing
The non-homogeneous scanpath of implanted region, that is, dispense the uniform scanning approach of the known techniques of part.Part is dispensed to sweep
The effect of approach is retouched, scanning of the wafer along part is allowed with infinitely great scan speed using uniform scanning approach although being equivalent to
Approach passes through ion beam so that corresponding implant dosage in turn results in the high low dosage of different piece on wafer to level off to 0
Ratio is close to infinity, therefore can break through conventional ion implant only attainable dose when being limited to the motor slewing rate upper limit
The amount ratio upper limit.Thereby, the present invention can improve the implant dose ratio between wafer different piece difference implantation region, without
Need correspondingly to replace drive motor or adjustment ion beam (such as adjusted respectively in different transverse movements ion beam with
Different ion beam current amount is provided.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not limited to the claim of the present invention；
It is all other without departing from the lower equivalent change or modification completed of revealed spirit is invented, it should be included in following apply for a patent
In the range of.
【Symbol description】
10 wafers
10a wafers
10b wafers
11 scanpaths
12 ion beams
The additional implanted regions of 13a-13d
14a-14e implanted regions
The additional cyclic annular implanted regions of 102a
102b ring-type implanted regions
102c ring-type implanted regions
20 wafers
20a wafers
20b wafers
21 scanpaths
22 ion beams
24a-24e implanted regions
26c ring-type implanted regions
The additional cyclic annular implanted regions of 202a
202b ring-type implanted regions
202c ring-type implanted regions
Claims (18)
- A kind of 1. ion implant method for promoting wafer ion implantation dose ratio, which is characterized in that the method includes：There is provided wafer and ion beam, the wafer has at least one implanted region and at least one non-implantation region；AndThe wafer is made to carry out transverse shifting and longitudinal movement in the plane interlocked with ion beam, uses and ion beam is allowed only to sweep It retouches through implanted region in wafer without scanning through the non-implantation region in wafer.
- 2. ion implant method as described in claim 1, which is characterized in that the height of the cross section of the ion beam is less than the crystalline substance Diameter of a circle.
- 3. ion implant method as described in claim 1, which is characterized in that at least one transverse shifting step of the method and At least one longitudinal movement step, the transverse shifting step make the ion beam only scan through the implanted region without sweeping Retouch through the non-implantation region, any longitudinal movement step to after terminating in a transverse shifting step with it is next Before a transverse shifting step carries out, which is vertically moved.
- 4. ion implant method as claimed in claim 3, which is characterized in that it is described longitudinal movement step process in the wafer not It can be scanned and pass through by the ion beam.
- 5. ion implant method as claimed in claim 3, which is characterized in that the method is additionally included in a transverse shifting step Suddenly the wafer is rotated before being carried out after terminating with next transverse shifting step.
- 6. ion implant method as claimed in claim 5, which is characterized in that rotational angle when rotating the wafer every time is all Identical.
- 7. ion implant method as described in claim 1, which is characterized in that the implanted region is strip implanted region.
- 8. ion implant method as claimed in claim 5, which is characterized in that wafer rotation four times, 90 degree every time, to be formed Cross striped implanted region, window-like implanted region, square or rectangular implanted region.
- 9. ion implant method as claimed in claim 5, which is characterized in that the wafer rotates eight times or more, to form ring-type Implanted region.
- 10. a kind of ion implantation system, which is characterized in that the system includes：Ion beam assembly, to provide ion beam；Wafer carrying mechanism, wafer to be moved in the plane interlocked with the ion beam；AndControl unit, the ion beam assembly to be controlled to perform an ion implant method, the ion cloth with the wafer carrying mechanism Plant method includes：When the wafer has at least one implanted region at least one non-implantation region, in the plane interlocked with ion beam Carry out transverse shifting with longitudinal movement, use allow ion beam only scan by implanted region in wafer without scan pass through crystalline substance Non-implantation region in circle.
- 11. ion implantation system as claimed in claim 10, which is characterized in that the system also includes to control the wafer Load carrier can program multi-axis controller.
- 12. ion implantation system as claimed in claim 11, which is characterized in that the ion implant method is by input parameter Being worth can the execution of program multi-axis controller to this.
- 13. ion implantation system as claimed in claim 12, which is characterized in that the system also includes：Sensor, to obtain the information of the ion beam；AndDosage emulator to perform scanpath distribution, is distributed with omitting scanning distribution comprising motor speed, is met with finding out The parameter value of wafer dosage distributed needs.
- 14. ion implantation system as claimed in claim 10, which is characterized in that the ion beam that the ion beam assembly is provided Cross-sectional height is less than the crystalline substance diameter of a circle.
- 15. ion implantation system as claimed in claim 10, which is characterized in that the control unit controls the ion cloth of execution Plant method includes at least one transverse shifting step and at least one longitudinal movement step, at least one transverse shifting step So that the ion beam is only scanned through the implanted region without scanning through the non-implantation region, any longitudinal direction is moved Dynamic step with next transverse shifting step to before carrying out after terminating in a transverse shifting step, by wafer longitudinal direction It is mobile.
- 16. ion implantation system as claimed in claim 15, which is characterized in that the control unit causes the longitudinal movement step The wafer will not be scanned by the ion beam during rapid passes through.
- 17. ion implantation system as claimed in claim 15, which is characterized in that the control unit can be in a transverse shifting Step rotates the wafer before being carried out after terminating with next transverse shifting step.
- 18. ion implantation system as claimed in claim 17, which is characterized in that the control unit to rotate the wafer every time When rotational angle be all identical.
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| TW103141360 | 2014-11-28 | ||
| TW103141360A TWI670758B (en) | 2014-11-28 | 2014-11-28 | Ion implantation method and system for enhancing the dose? ratio over a wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7582883B2 (en) * | 2007-01-12 | 2009-09-01 | Applied Materials, Inc. | Method of scanning a substrate in an ion implanter |
| CN102479655A (en) * | 2010-11-19 | 2012-05-30 | 汉辰科技股份有限公司 | Ion implantation method and ion implanter |
| CN103227087A (en) * | 2012-01-27 | 2013-07-31 | 斯伊恩股份有限公司 | Ion implantation method and ion implantation apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7582883B2 (en) * | 2007-01-12 | 2009-09-01 | Applied Materials, Inc. | Method of scanning a substrate in an ion implanter |
| CN102479655A (en) * | 2010-11-19 | 2012-05-30 | 汉辰科技股份有限公司 | Ion implantation method and ion implanter |
| CN103227087A (en) * | 2012-01-27 | 2013-07-31 | 斯伊恩股份有限公司 | Ion implantation method and ion implantation apparatus |
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| TWI670758B (en) | 2019-09-01 |
| TW201620019A (en) | 2016-06-01 |
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