CN105648534A - Process for synthesizing gallium arsenide polycrystalline material - Google Patents
Process for synthesizing gallium arsenide polycrystalline material Download PDFInfo
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- CN105648534A CN105648534A CN201410626143.3A CN201410626143A CN105648534A CN 105648534 A CN105648534 A CN 105648534A CN 201410626143 A CN201410626143 A CN 201410626143A CN 105648534 A CN105648534 A CN 105648534A
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Abstract
The invention discloses a process for synthesizing a gallium arsenide polycrystalline material. By adopting the process method, during the synthesis of the gallium arsenide polycrystalline material, a boron oxide covering layer is not required, and semiconductor polycrystalline materials which meet the industrialized requirements of compound semiconductor monocrystalline materials on growth can be synthesized in batches.
Description
Technical field
The invention belongs to chemical process field, be specifically related to the synthesis technique of a kind of gallium arsenide polycrystal material.
Background technology
The synthesis process of gallium arsenide polycrystal material at least includes the basic processes such as high pressure evacuation, thawing, stirring, cooling. In the technical process method preparing gallium arsenide polycrystal material at present, technological process is not easy to implement, and the gallium arsenide polycrystal material purity of generation is low, reactant conversion per pass is low, and manufacturing process is complicated, and environmental pollution is bigger, production efficiency is low and cost high, is not suitable for large-scale production.
Summary of the invention
For the above-mentioned technical problem overcoming prior art to exist, it is an object of the invention to, it is provided that the synthesis technique of a kind of gallium arsenide polycrystal material, the present invention not only manufacturing process is simple, improve work efficiency, and the gallium arsenide polycrystal material purity generated is big.
The synthesis technique of gallium arsenide polycrystal material provided by the invention, comprises the following steps:
(1) gallium and arsenic are loaded in cracking boron nitride crucible, high-pressure synthesis stove will be put into after crucible cover on crucible cover, high-pressure synthesis stove is evacuated;
(2) being filled with the purity noble gas more than or equal to 99.999% in high-pressure synthesis stove, the span of control that pressure is charged to P1, t0 within the t0 time is 18��30 minutes, and the span of control of P1 is 3.0��4.0MPa;
(3) starting at the uniform velocity to be warming up to H1, H1 span of control from room temperature by high-pressure synthesis in-furnace temperature is 816 DEG C��890 DEG C, and the span of control of the heating rate �� H1 of employing is 40��60 DEG C/min, and the span of control of heating-up time t1 is 12��26 minutes;
(4) will heat up speed to change �� H2 into and continue that to be at the uniform velocity warming up to H2, H2 span of control be 1220 DEG C��1250 DEG C, �� H2 span of control is 15��48 DEG C/min, and heating-up time t2 span of control is 15��22 minutes;
(5) high-pressure synthesis in-furnace temperature keeping constant temperature on H2, constant temperature time is t3, t3 span of control is 29��52 minutes, makes the compound polycrystal material after synthesis be completely melt;
(6) starting at the uniform velocity to be cooled to H3, H3 span of control from H2 by high-pressure synthesis in-furnace temperature is 1000 DEG C��1100 DEG C, and rate of temperature fall is �� H3, and �� H3 span of control is 5��11 DEG C/min;
(7) cooling is until room temperature to adopt rate of temperature fall �� H4 to continue at the uniform velocity, and �� H4 span of control is 30��40 DEG C/min;
(8) at room temperature cooling down be more than or equal to 70 minutes, building-up process terminates.
The synthesis technique of gallium arsenide polycrystal material provided by the invention, it has the beneficial effects that, overcoming prior art, to prepare operation in gallium arsenide polycrystal material technology process more, and the problem that workload is big improves work efficiency; Improve the conversion per pass of reactant and the productivity of product.
Detailed description of the invention
Below in conjunction with an embodiment, the synthesis technique of gallium arsenide polycrystal material provided by the invention is described in detail.
Embodiment
The synthesis technique of the gallium arsenide polycrystal material of the present embodiment, comprises the following steps:
(1) gallium and arsenic are loaded in cracking boron nitride crucible, high-pressure synthesis stove will be put into after crucible cover on crucible cover, high-pressure synthesis stove is evacuated;
(2) being filled with the purity noble gas more than or equal to 99.999% in high-pressure synthesis stove, the span of control that pressure is charged to P1, t0 within the t0 time is 30 minutes, and the span of control of P1 is 3.0MPa;
(3) starting at the uniform velocity to be warming up to H1, H1 span of control from room temperature by high-pressure synthesis in-furnace temperature is 890 DEG C, and the span of control of the heating rate �� H1 of employing is 40 DEG C/min, and the span of control of heating-up time t1 is 26 minutes;
(4) will heat up speed to change �� H2 into and continue that to be at the uniform velocity warming up to H2, H2 span of control be 1250 DEG C, �� H2 span of control is 48 DEG C/min, and heating-up time t2 span of control is 22 minutes;
(5) high-pressure synthesis in-furnace temperature keeping constant temperature on H2, constant temperature time is t3, t3 span of control is 52 minutes, makes the compound polycrystal material after synthesis be completely melt;
(6) from H2, high-pressure synthesis in-furnace temperature being started at the uniform velocity be cooled to H3, H3 span of control and be 1000 DEG C DEG C, rate of temperature fall is �� H3, and �� H3 span of control is 11 DEG C/min;
(7) cooling is until room temperature to adopt rate of temperature fall �� H4 to continue at the uniform velocity, and �� H4 span of control is 40 DEG C/min;
(8) at room temperature cooling down be more than or equal to 70 minutes, building-up process terminates.
Claims (1)
1. the synthesis technique of a gallium arsenide polycrystal material, it is characterised in that: said method comprising the steps of:
(1) gallium and arsenic are loaded in cracking boron nitride crucible, high-pressure synthesis stove will be put into after crucible cover on crucible cover, high-pressure synthesis stove is evacuated;
(2) being filled with the purity noble gas more than or equal to 99.999% in high-pressure synthesis stove, the span of control that pressure is charged to P1, t0 within the t0 time is 18��30 minutes, and the span of control of P1 is 3.0��4.0MPa;
(3) starting at the uniform velocity to be warming up to H1, H1 span of control from room temperature by high-pressure synthesis in-furnace temperature is 816 DEG C��890 DEG C, and the span of control of the heating rate �� H1 of employing is 40��60 DEG C/min, and the span of control of heating-up time t1 is 12��26 minutes;
(4) will heat up speed to change �� H2 into and continue that to be at the uniform velocity warming up to H2, H2 span of control be 1220 DEG C��1250 DEG C, �� H2 span of control is 15��48 DEG C/min, and heating-up time t2 span of control is 15��22 minutes;
(5) high-pressure synthesis in-furnace temperature keeping constant temperature on H2, constant temperature time is t3, t3 span of control is 29��52 minutes, makes the compound polycrystal material after synthesis be completely melt;
(6) starting at the uniform velocity to be cooled to H3, H3 span of control from H2 by high-pressure synthesis in-furnace temperature is 1000 DEG C��1100 DEG C, and rate of temperature fall is �� H3, and �� H3 span of control is 5��11 DEG C/min;
(7) cooling is until room temperature to adopt rate of temperature fall �� H4 to continue at the uniform velocity, and �� H4 span of control is 30��40 DEG C/min;
(8) at room temperature cooling down be more than or equal to 70 minutes, building-up process terminates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410626143.3A CN105648534A (en) | 2014-11-10 | 2014-11-10 | Process for synthesizing gallium arsenide polycrystalline material |
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| CN201410626143.3A CN105648534A (en) | 2014-11-10 | 2014-11-10 | Process for synthesizing gallium arsenide polycrystalline material |
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| CN105648534A true CN105648534A (en) | 2016-06-08 |
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| CN201410626143.3A Pending CN105648534A (en) | 2014-11-10 | 2014-11-10 | Process for synthesizing gallium arsenide polycrystalline material |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108103577A (en) * | 2017-12-28 | 2018-06-01 | 广东先导先进材料股份有限公司 | The synthetic method and synthesizer of a kind of gallium arsenide polycrystal |
| CN108570708A (en) * | 2018-07-25 | 2018-09-25 | 汉能新材料科技有限公司 | A kind of gallium arsenide polycrystal synthesizer |
| CN108866630A (en) * | 2018-07-25 | 2018-11-23 | 汉能新材料科技有限公司 | A kind of gallium arsenide polycrystal synthetic method |
-
2014
- 2014-11-10 CN CN201410626143.3A patent/CN105648534A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108103577A (en) * | 2017-12-28 | 2018-06-01 | 广东先导先进材料股份有限公司 | The synthetic method and synthesizer of a kind of gallium arsenide polycrystal |
| CN108570708A (en) * | 2018-07-25 | 2018-09-25 | 汉能新材料科技有限公司 | A kind of gallium arsenide polycrystal synthesizer |
| CN108866630A (en) * | 2018-07-25 | 2018-11-23 | 汉能新材料科技有限公司 | A kind of gallium arsenide polycrystal synthetic method |
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Application publication date: 20160608 |
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