CN105636263B - LED photovoltaic module and its driving chip - Google Patents
LED photovoltaic module and its driving chip Download PDFInfo
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- CN105636263B CN105636263B CN201510922035.5A CN201510922035A CN105636263B CN 105636263 B CN105636263 B CN 105636263B CN 201510922035 A CN201510922035 A CN 201510922035A CN 105636263 B CN105636263 B CN 105636263B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/40—Details of LED load circuits
- H05B45/44—Details of LED load circuits with an active control inside an LED matrix
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Abstract
The present invention discloses a kind of LED photovoltaic module and its driving chip.The LED drive chip, for driving LED light source, including:Multiple negative-feedback amplifier units in parallel and different reference voltage, in a certain operation time, negative-feedback amplifier unit described in only one exports amplifier electric current, wherein, each negative-feedback amplifier unit includes：Negative-feedback amplifier module and anti-die block excessively, the negative-feedback amplifier module under the anti-protection of die block excessively, export a constant electric current according to an overheat protector point voltage signal.Public LED photovoltaic module and its driving chip of the invention have the advantages of electric current output is stable, simple in construction, cost is cheap.
Description
Technical field
The present invention relates to the actuation techniques field of LED light source, is driven more particularly to a kind of LED photovoltaic module and its LED
Chip.
Background technology
LED light source because with it is green, service life is long, energy-conservation, stable performance, light efficiency height and small volume etc. are excellent
Point, have been widely used at present to various lighting fields, such as room lighting, automobile, consumption electronic products.
At present, developing rapidly with LED technology, LED light source have been widely applied in high-power illumination equipment.And mesh
Need LED numbers more on preceding high-power illumination, some up to up to a hundred.A kind of recent LED photovoltaic module is widely used,
The LED photovoltaic module includes substrate and the LED drive circuit and LED that set on the substrate, and the LED drive circuit includes
LED drive chip and necessary other circuit elements.The LED photovoltaic module can both be independently used for illuminating, and also may be mounted to LED
On the base of lighting apparatus, assembled with lampshade etc., it is convenient without excessive consideration LED circuit design etc., production and assembly.
But in LED light source, LED drive chip is when driving LED, if electric current output is unstable, not only results in LED appearance
Flicker, when electric current is excessive, may burn LED.It is existing to solve to use surely when LED drive chip output current is unstable
Device or the complex circuit of other structures are flowed, not only structure is excessively complicated and with high costs for these designs.
Therefore, it is necessary to propose a kind of new scheme, solve the above problems.
The content of the invention
The present invention is based on above one or more problem, there is provided a kind of LED photovoltaic module and its driving chip, to
Solve the problems, such as that LED drive chip output current is unstable in the prior art, circuit structure is complicated and with high costs.
The present invention provides a kind of LED drive chip, for driving LED light source, wherein, including:Multiple in parallel and reference electricity
Different negative-feedback amplifier units is pressed, in a certain operation time, negative-feedback amplifier unit described in only one exports amplifier electric current, its
In, each negative-feedback amplifier unit includes：Negative-feedback amplifier module and anti-die block excessively, the negative-feedback amplifier module foundation
One overheat protector point voltage signal, under the anti-protection of die block excessively, export a constant electric current, the negative-feedback amplifier
Module includes：Electric current mirror module, phase compensation submodule and decompression submodule and the input overheat protector point voltage
The overheat protector point input submodule of signal, the electric current mirror module are used to provide one and the negative-feedback amplifier unit
Reference voltage identical current mirror voltage, it is defeated after the phase compensation submodule carries out phase compensation to the current mirror voltage
Go out to the decompression submodule, the decompression submodule is in parallel with the overheat protector point input submodule, when the excess temperature is protected
During shield point input submodule conducting, the decompression submodule short circuit is described when the overheat protector point input submodule is ended
Decompression submodule is depressured to the output voltage of the negative-feedback amplifier module, and the LED drive chip also includes excess temperature and protected
Unit is protected, the over-temperature protection unit exports the overheat protector point voltage signal when the LED drive chip temperature is too high
To the overheat protector point input submodule of the negative-feedback amplifier unit, the over-temperature protection unit, including：Reference current
Input block, resistance adjustment unit, comparing unit, negative temperature coefficient voltage generating unit and linear current output regulation are single
Member, the reference current input block produce an adjustable reference voltage of size with the resistance adjustment unit；It is described negative
Temperaturecoefficient voltage generation unit produces the negative temperature coefficient electricity of a size reduction with the temperature rise of the LED drive chip
Pressure；The comparing unit is used for the size of the negative temperature coefficient voltage and the reference voltage to control the negative temperature
The output of coefficient voltages；The linear current output adjustment unit becomes according to the voltage of the negative temperature coefficient voltage generating unit
Change, adjust exported linear current size to control the operating current of the LED drive chip, the over-temperature protection unit is also
Including：Capacitor cell is buffered, described buffering capacitor cell one end is connected to the input of the comparing unit, and the other end is connected to
The output end of the comparing unit；The buffering capacitor cell includes：Delay cell and capacitor cell, the delay cell are used for
When LED drive chip temperature raises suddenly, the switch control unit for postponing the over-temperature protection unit performs shutoff operation
Time；The capacitor cell is used for filtering clutter, makes the electric current of the over-temperature protection unit stable.
It is preferred that the LED drive chip also includes：Invariable power unit, for ensureing the LED drive chip constant
Worked under power.
It is preferred that the switch control unit is used for according to the comparing unit negative temperature coefficient voltage and institute
The comparison signal after reference voltage is stated, is turned on and off the LED drive chip；Bias current generation unit, for for excess temperature
Adjust circuit and bias current is provided.
It is preferred that the circuit of the negative-feedback amplifier module is specially：From power supply inflow current to the 70th FET
With the 71st FET, the source electrode of the 70th FET and the source electrode of the 71st FET are connected, and one
One bias voltage is connected to the grid of the 70th FET and the grid of the 71st FET, the 70th FET
Drain electrode is connected to the source electrode of the 73rd FET and the source electrode of the 72nd FET；One reference voltage end connection the 7th
The grid of the grid of 12 FETs and the 74th FET, after the source electrode of the 74th FET is connected with drain electrode
Ground connection；The grid of drain electrode the 75th FET of connection of 73rd FET and drain electrode and the 76th field-effect
The grid of pipe, the source electrode of the 75th FET and the source electrode of the 76th FET are grounded after being connected；72nd
The drain electrode of effect pipe is connected to source electrode and the drain electrode of the 77th FET, and the source electrode of the 77th FET and drain electrode
It is connected, the grid of the 77th FET is connected to the drain electrode and of the 71st FET after the 35th resistance
The drain electrode of 78 FETs；The source ground of 78th FET, and grid connects the 77th FET
Drain electrode；The drain electrode of 71st FET and drain electrode and the output end phase of negative-feedback amplifier unit of the 79th FET
Connection.
It is preferred that the LED drive chip also includes：Overheat protector point adjustment unit, for adjusting the LED drivings core
The overheat protector point of piece, the overheat protector point adjustment unit include：Amplifier module, current mirror module, Current amplifier module, can
Become resistance unit, the amplifier module, which is used to providing band, carries voltage, ensures in multiple loads or provides when loading larger stable
Voltage, electric current that the current mirror module exports to the amplifier module provides an image current, the Current amplifier mould
Block is used to the image current being amplified by preset multiple, and the variable resistance unit is used to set overheat protector point big
It is small.
It is preferred that the switch control unit includes：16th FET, the 21st FET, the 22nd
FET, the 23rd FET, the 24th FET and the 25th FET, wherein, the described 16th
The grid of FET is controlled by the output signal of the comparing unit, the source electrode of the 16th FET and described the
The source electrode of 21 FETs is connected with drain electrode, and the drain electrode of the 16th FET connects described 21st respectively
The grid of the grid of effect pipe, the grid of the 22nd FET and the 23rd FET；Described
The source electrode connection power supply of 22 FETs, the drain electrode of the 22nd FET connect described 23rd respectively
The grid of the draining of the grid of effect pipe, the grid of the 24th FET and the 25th FET；Institute
The source electrode for stating the 23rd FET connects the source electrode of the 25th FET and the 21st effect respectively
Should pipe drain electrode；The drain electrode of 24th FET connects with the drain electrode of the 25th FET, and exports
Switch controlling signal.
The present invention also provides a kind of LED photovoltaic module, and the LED photovoltaic module includes substrate, on the substrate
LED light source and LED drive circuit, the LED drive circuit include LED drive chip, wherein, the LED drive chip is such as
LED drive chip described in preceding any one.
The LED photovoltaic module and its driving chip of the present invention has that electric current output stability is good, simple in construction and cost
Cheap beneficial effect.
Brief description of the drawings
Fig. 1 is the structural representation of the LED drive chip of the LED photovoltaic module of present pre-ferred embodiments.
Fig. 2 is the structural representation of the supply unit shown in Fig. 1.
Fig. 3 is the electrical block diagram of the power subsystem in Fig. 2.
Fig. 4 is the structural representation of the negative-feedback amplifier unit shown in Fig. 1.
Fig. 5 is the electrical block diagram of the unit of negative-feedback amplifier shown in Fig. 4.
Fig. 6 is the structural representation of the overheat protector point adjustment unit shown in Fig. 1.
Fig. 7 is the electrical block diagram of the overheat protector point adjustment unit shown in Fig. 6.
Fig. 8 is the structural representation of the over-temperature protection unit shown in Fig. 1.
Fig. 9 is the electrical block diagram of the over-temperature protection unit shown in Fig. 8.
Embodiment
The present invention is described in detail with reference to the accompanying drawings and examples.If it should be noted that do not conflicted, this hair
Each feature in bright embodiment and embodiment can be combined with each other, within protection scope of the present invention.
Embodiment 1
Fig. 1 is referred to, Fig. 1 is the structural representation of the LED drive chip of the LED photovoltaic module of present pre-ferred embodiments
Figure.As shown in figure 1, the LED photovoltaic module of the present invention belongs to an important component of LED light source device, LED light source device
Also include base and lampshade etc. on the basis of the LED light source module.The LED light source module includes LED drive chip, and it is used for
LED light source is driven, is mainly included：Supply unit 21, overheat protector point adjustment unit 24 and over-temperature protection unit 23 and multiple
Negative-feedback amplifier unit 25 in parallel and different reference voltage, in a certain operation time, negative-feedback amplifier unit described in only one
Export amplifier electric current.The supply unit 21 provides stable power supply, the overheat protector point regulation for the LED drive chip
Unit 24 is used for the overheat protector point for adjusting the LED drive chip, and the over-temperature protection unit 23 is used for according to the excess temperature
Point is protected, overheat protector is carried out to the LED drive chip, the negative-feedback amplifier unit 25 is used for the LED drive chip
Export constant electric current and drive the LED light source.
The present invention is by setting overheat protector point adjustment unit 24 and over-temperature protection unit 23 and negative-feedback amplifier unit
25 so that LED drive chip will not cause LED drive chip to be burnt because temperature is too high, effectively extend making for LED light source device
With the life-span, and it is simple in construction, cost is cheap.
Further, the LED drive chip also includes：Invariable power unit 22, for ensureing that the LED drive chip exists
Operated at constant power.By setting invariable power unit 22, the present invention can ensure that LED drive chip is in constant work(well
Worked under rate, reduce circuit because voltage or electric current drastically changes the power increase suddenly caused by or reduced, influence LED light source
The problem of service life.
Fig. 2 is referred to, Fig. 2 is the structural representation of the supply unit shown in Fig. 1.It is as shown in Fig. 2 specific real at one
Apply in example, the supply unit 21 includes：Power subsystem 212, bias voltage units 211 and band-gap reference power subsystem 213, institute
Power subsystem 212 is stated to power for the bias voltage units 211 and the band-gap reference power subsystem 213；The bias voltage
Unit 211 is that the overheat protector point adjustment unit 24 and over-temperature protection unit 23 and negative-feedback amplifier unit 25 provide work
Required bias voltage；The bandgap voltage reference unit 213 is used to protect to the overheat protector point adjustment unit 24 and excess temperature
Protect unit 23 and negative-feedback amplifier unit 25 provides benchmark job voltage.
Fig. 3 is referred to, Fig. 3 is the electrical block diagram of the power subsystem in Fig. 2.As shown in figure 3, the electricity of power subsystem
Road is as follows：Supply voltage D1 flows into high voltage bearing J-type-FET M44 drain electrode, J-type-FET M44 source electrode difference
It is connected to drain electrode, the first power transistor Q3 colelctor electrode and source resistance R5 of the FET M45 as electrostatic protection
One end.J-type-FET M44 grid is connected respectively to second source transistor Q2 colelctor electrode and base stage, the first power supply
Transistor Q3 base stage and the source resistance R5 other end.Second source transistor Q2 emitter stage connection Zener diode D1
Earth terminal GND is connected afterwards.First power transistor Q3 emitter stage output supply voltage VCC.Field-effect as electrostatic protection
Pipe M45 source electrode is grounded after being connected with grid.
Fig. 4 and Fig. 5 are referred to, Fig. 4 is the structural representation of the negative-feedback amplifier unit shown in Fig. 1；Fig. 5 is shown in Fig. 4
The electrical block diagram of negative-feedback amplifier unit.As shown in Figure 4 and Figure 5, the negative-feedback amplifier unit includes：Reference voltage end
VREF1 and chip selection signal end CS_R and output end GATE, meanwhile, the negative-feedback amplifier unit also has power supply VCC, ground connection
GND, anti-overshoot signal end ST1, overheat protector end OTP_H (high level is effective) and the first bias voltage VPB1.Output end
GATE is connected to the 91st FET M91 grids, the electric current of output after the 91st FET M91 is amplified extremely
Drain D 1 exports, and the 91st FET M91 source electrode CS is connected to chip selection signal end CS_R by resistance.
Further, in the physical circuit variant embodiment shown in Fig. 4, the negative-feedback amplifier unit mainly includes：It is negative
Feed back amplifier module and it is anti-cross die block, the negative-feedback amplifier module ensures that the electric current of the LED drive chip output is stable,
The anti-die block of crossing is used to prevent that transient current is excessive and burns the LED drive chip.The negative-feedback amplifier module according to
According to an overheat protector point voltage signal, under the anti-protection of die block excessively, a constant electric current is exported.The negative-feedback fortune
Amplification module includes：Electric current mirror module, phase compensation submodule and decompression submodule and the input overheat protector point electricity
The overheat protector point input submodule of signal is pressed, the electric current mirror module is used to provide one and the negative-feedback amplifier unit
Reference voltage identical current mirror voltage, the phase compensation submodule to the current mirror voltage carry out phase compensation after,
The decompression submodule is output to, the decompression submodule is in parallel with the overheat protector point input submodule, when described
When overheat protector point input submodule turns on, the decompression submodule short circuit, when the overheat protector point input submodule
During cut-off, the decompression submodule is depressured to the output voltage of the negative-feedback amplifier module.The negative-feedback amplifier module
Physical circuit be:From power supply VCC inflow currents to the 70th FET M70 and the 71st FET M71, the 70th
FET M70 source electrode and the 71st FET M71 source electrode are connected, and the first bias voltage VPB1 is connected to the 70th
The grid of FET M70 grid and the 71st FET M71, the 70th FET M70 drain electrode are connected to
73 FET M73 source electrode and the 72nd FET M72 source electrode.Reference voltage end VREF connections the 72nd
The grid of FET M72 grid and the 74th FET M74, the 74th FET M74 source electrode and drain electrode
It is grounded after being connected.73rd FET M73 the 75th FET M75 of drain electrode connection grid and drain electrode and the
76 FET M76 grid, the 75th FET M75 source electrode and the 76th FET M76 source electrode
It is grounded after being connected.72nd FET M72 drain electrode is connected to the 77th FET M77 source electrode and drain electrode, and
77th FET M77 source electrode is connected with drain electrode, and the 77th FET M77 grid is through the 35th resistance
The 71st FET M71 drain electrode and the 78th FET M78 drain electrode are connected to after R35.78th effect
Should pipe M78 source ground, grid connect the 77th FET M77 drain electrode.71st FET M71 drain electrode
Output end GATE also with negative-feedback amplifier unit is connected, and the output end GATE of negative-feedback amplifier unit is also respectively connected with the 7th
19 FET M79 drain electrode and the 81st FET M81 drain electrode.79th FET M79 grid connects
It is connected to thermal-shutdown circuit, source ground.81st FET M81 source electrode connection power supply VCC, grid connect anti-overshoot
Signal end ST1, the drain electrode of the 82nd FET M82 of drain electrode connection grid and the 83rd FET M83, the 80th
It is grounded after two FET M82 source electrode and drain electrode connection through resistance R36, and the 83rd FET M83 grid and the
82 FET M82 source electrode is connected, the 83rd FET M83 source ground.Wherein, the 81st field-effect
Pipe M81, the 82nd FET M82, the 83rd FET M83 and resistance R36 form the anti-of the present invention and cross die block.
The negative-feedback amplifier unit of the present invention has simple in construction, the cheap beneficial effect of cost.
Fig. 6 and Fig. 7 are referred to, Fig. 6 is the structural representation of the overheat protector point adjustment unit shown in Fig. 1, and Fig. 7 is Fig. 6
The electrical block diagram of shown overheat protector point adjustment unit.As shown in Figure 6 and Figure 7, overheat protector point adjustment unit 24
Including amplifier module 241, current mirror module 242, Current amplifier module 243, variable resistance unit 245, amplifier module 241 provides
Band carries voltage, ensures in multiple loads or stable voltage is provided when loading larger, current mirror module 242 is to amplifier module
The electric currents of 241 outputs provide an image currents, and this image current can be according to being necessarily drawn to set.Current amplifier module
243 are amplified image current by preset multiple, and variable resistance unit 245 is used to set overheat protector point, such as resistance change greatly,
Overheat protector point is higher, also just says that LED drive chip is operated within the scope of higher temperature., can by setting overheat protector point
With the actual conditions according to LED light source, control over-temperature protection unit opens overheat protector in good time.
Further, overheat protector point adjustment unit 24 also includes zero compensation capacitance module 246, the zero compensation electric capacity
Module 246 is used in backfeed loop, when phase field degree is inadequate, prevents circuit self-excitation.
Further, overheat protector point adjustment unit 24 also includes anti-static module 244, for preventing circuit from producing electrostatic
Infringement.
Fig. 7 is referred to, the circuit structure of the overheat protector point adjustment unit 24 is specific as follows：
Amplifier module 241 includes amplifier input submodule, amplifier output sub-module, amplifier regulation resistance.Specifically, transporting
Put in input submodule, the first bias voltage of bias voltage units 211 provides end VPB1's and the 26th FET M26
The grid connection of grid, the 27th FET M27, the 26th FET M26 source electrode are connected with power supply VCC, the
26 FET M26 drain electrode is connected with the 39th FET M39 drain electrode, the 39th FET M39's
Second bias voltage of grid and bias voltage units 211 provides end VPB2 and be connected, the 39th FET M39 source electrode and
43rd FET M43 drain electrode connection, the 43rd FET M43 grid connect the 39th FET
M39 drain electrode, source electrode, the 42nd field-effect of the 43rd FET M43 source electrode and the 41st FET M41
Pipe M42 source electrode connection.27th FET M27 source electrode connection power supply VCC, the 27th FET M27 leakage
Pole connects the 34th FET M34 source electrode and the 35th FET M35 source electrode.34th FET
M34 grid is connected with the output end Vbg of band-gap reference power subsystem 213, the 34th FET M34 drain electrode connection the
41 FET M41 drain electrode and the 36th FET M36 source electrode, the 36th FET M36 grid
End VPB2 is provided with the second bias voltage to be connected, the 41st FET M41 grid is connected to the 39th FET
M39 drain electrode.35th FET M35 drain electrode connection the 37th FET M37 source electrode and the 42nd
The drain electrode of effect pipe.In amplifier output sub-module, power supply VCC inputs the 28th FET M28 source electrode and the 20th
Nine FET M29 source electrode, and the 28th FET M28 grid and the 29th FET M29 grid connect
It is connected to the 36th FET M36 of amplifier input submodule drain electrode, the 28th FET M28 drain electrode and the 3rd
12 FET M32 source electrode is connected, and the 29th FET M29 drain electrode is with the 33rd FET M33's
Source electrode is connected.32nd FET M32 drain electrode is connected to the 36th FET M36 of amplifier input submodule
Drain electrode, the 33rd FET M33 drain electrode is connected to the 37th FET M37 of amplifier input submodule leakage
Pole.37th FET M37 source electrode is connected with the 42nd FET M42 drain electrode.
The grid that minimum capacity compensating module 246 includes the 40th FET M40 is connected to the 3rd of amplifier module 241
17 FET M37 drain electrode and the 38th FET M38 grid, the 40th FET M40 source electrode and leakage
It is grounded after being extremely connected.
Current mirror module 242 includes：30th FET M30 and the 31st FET M31.Wherein, the 30th
FET M30 source electrode and the 31st FET M31 source electrode are connected with power supply VCC, the 30th FET M30's
The grid of grid, drain electrode and the 31st FET M31 is with the 38th FET M38's of Current amplifier module 243
Drain electrode is connected, the 31st FET M31 drain electrode output overheat protector electric current IOUT-RTH.
Current amplifier module 243 includes：38th FET M38, the 38th FET M38 drain electrode connection
The output end of current mirror module 242, the 37th FET M37 of grid connection amplifier module 241 drain electrode, source electrode connection
Variable resistance unit 245.
Variable resistance unit 245 includes：At least one variable resistor RTH, by changing variable resistor RTH resistance, adjust
Overheat protector point is saved, so as to protect LED drive chip to be operated within the scope of appropriate temperature.Further, in addition to series electrical
Hinder R8 and resistance R9.
Anti-static module 244 includes resistance R7.
The regulation resistance R6 to be connected with resistance R7 is used for the voltage and power subsystem 212 for making band-gap reference power subsystem 213
Voltage it is equal, i.e. Vbg=VCC.
Fig. 8 and Fig. 9 are referred to, Fig. 8 is the structural representation of the over-temperature protection unit shown in Fig. 1；Fig. 9 is shown in Fig. 8
The electrical block diagram of over-temperature protection unit.As shown in Figure 8 and Figure 9, the LED drive chip of presently preferred embodiments of the present invention
Over-temperature protection unit (or excess temperature regulation circuit), for adjusting temperature during LED drive chip work.The over-temperature protection unit
Including：Reference current input block 11, resistance adjustment unit 12, comparing unit 18, negative temperature coefficient voltage generating unit 17 with
And linear current output adjustment unit 16, the reference current input block 11 produce one big with the resistance adjustment unit 12
Small adjustable reference voltage, wherein, resistance adjustment unit 12 is according to temperature change, adjusting resistance value size, or according to reality
Border needs that resistance is adjusted, and can so change the size of reference voltage.The negative temperature coefficient voltage generating unit 17 with
The temperature rise of the LED drive chip produces the negative temperature coefficient voltage that a size reduces.Wherein, negative temperature coefficient voltage
Refer to that the change of voltage and LED drive chip temperature change are negatively correlated, with the rise of temperature, the production of negative temperature coefficient voltage
Magnitude of voltage caused by raw unit 17 reduces.The comparing unit 18 is used for the negative temperature coefficient voltage and benchmark electricity
The size of pressure is to control the output of the negative temperature coefficient voltage.The linear current exports adjustment unit 16 according to the subzero temperature
The voltage change of coefficient voltages generation unit 17 is spent, adjusts exported linear current size to control the LED drive chip
Operating current.
The present invention can not only adjust reference voltage size flexibly to change overheat protector by above-mentioned structure design
Point, voltage output control is realized using simple comparing unit, both simplifies circuit structure, cost is reduced, prevents LED again
Driving chip causes LED drive chip to be burnt because temperature is too high, so as to extend the service life of LED light source device.
Further, the over-temperature protection unit also includes：Switch control unit 15, the switch control unit 15 are used for
According to the comparison signal after the comparing unit 18 negative temperature coefficient voltage and the reference voltage, it is turned on and off
The LED drive chip.Specifically, comparing unit 18 is used for the negative temperature coefficient voltage and the reference voltage
Size, when compare reference voltage described in the negative temperature coefficient voltage ratio it is big when, then negative temperature coefficient voltage generating unit 17
Continue to output voltage to the linear current and export adjustment unit 16, then linear electric current output adjustment unit 16 is driven for LED
Dynamic chip provides operating current, and now switch control unit 15 is in opening；When comparing the negative temperature coefficient voltage
During equal to or less than the reference voltage, illustrate that the temperature of LED drive chip is too high, have been over default temperature, switch
Control unit 16 closes LED drive chip.
In the embodiment of a deformation, after LED light source device uses the long period, light efficiency is deteriorated, to ensure luminance
Degree, it will usually improve brightness by increasing electric current, so now, heat rise caused by LED drive chip can be very fast, and this is just needed
Reference voltage is suitably adjusted by resistance adjustment unit, reference voltage is improved, so that switch control unit 16 shifts to an earlier date one
The individual time closes LED drive chip, prevents LED drive chip to be burned, extends the service life of LED light source device.
Further, the over-temperature protection unit also includes：Buffer capacitor cell 14, described buffering capacitor cell 14 one end
The input of the comparing unit 18 is connected to, the other end of the buffering capacitor cell 14 is connected to the comparing unit 18
Output end.The electric current that the buffering capacitor cell 18 is used to make to be output to linear current output adjustment unit 16 is stable, filters out miscellaneous
Ripple, slow down the closing of LED drive chip, avoid impacting LED light source device.
Further, the over-temperature protection unit includes：Bias current generation unit 13, for for the overheat protector list
Member provides bias current, and working power is provided for whole over-temperature protection unit.
Fig. 9 is referred to, the concrete structure of the over-temperature protection unit of present pre-ferred embodiments is as follows：
Since IOTP2 ends (over-temperature protection unit input), a constant bias current is provided to string from IOTP2 ends
Resistance R1, R2, R3, R4 of connection, resistance R1 one end ground connection, wherein resistance R1 is in parallel with temperature spot regulation resistance IOUT RTH,
By changing temperature spot regulation resistance IOUT RTH resistance, to change the voltage exported between IOTP2 ends and resistance R4, this
Reference voltage of the individual voltage as over-temperature protection unit.Wherein, resistance R1, R2, R3 and R4 and the temperature spot regulation resistance
IOUT RTH form the resistance adjustment unit 12 of the present invention.Reference voltage is output to a delay cell all the way, and the delay is single
Member includes the FET of several series connection, specifically, in the preferred embodiment, for the first FET of series connection
M1, the second FET M2, the 3rd FET M3, the 4th FET M4, in practice, according to needing field can be set to imitate
Should pipe quantity.The delay cell be used for when temperature raises suddenly, postpone switch control unit 15 perform shutoff operation when
Between.The delay cell is connected to capacitor cell, and the capacitor cell includes several FETs in parallel, specifically, in this hair
In bright preferred embodiment, for the 5th FET M5 in parallel, the 6th FET M6, the 7th FET M7, the 8th
Effect pipe M8 and the 9th FET M9, is grounded after the 9th FET M9.The capacitor cell can filtering clutter, make the mistake
The electric current of warm protection location is stable.In present pre-ferred embodiments, buffering capacitor cell 14 includes delay cell and electric capacity list
Member.
The another way of reference voltage is output to an input of comparing unit 18, and the other end of comparing unit 8 connects
Negative temperature coefficient voltage generating unit 17, comparing unit 18 mainly includes the 14th FET M14 here and the 15th imitates
Should pipe M15, reference voltage flowed into after the 14th FET M14 source electrodes the 17th FET M17 drain and gate and
18th FET M18 grid, and the 17th FET M17 source ground, and negative temperature coefficient voltage produce
The voltage signal of unit 17 is connected to the 15th FET M15 grid.And the 15th FET M15 source electrode is connected to
11st FET M11 drain electrode, drain electrode are connected with the 18th FET M18 drain electrode.17th FET M17's
The source ground of source electrode and the 18th FET M18.15th FET M15 drain electrode and the 18th FET M18
Drain electrode between separate a branch road be connected respectively to the 19th FET M19 grid and the 9th FET M9 grid with
And the 20th FET M20 grid.20th FET M20 drain electrode connection OTR ends, source ground, OTR here
End is used as output linearity electric current, with the size of current of LED drive circuit for adjusting.19th FET M19 drain electrode is connected to
12nd FET M12 drain electrode, source ground.12nd FET M12 grid is connected to bias voltage VPB1, source
Pole connects the tenth FET M10 drain electrode and source electrode and power supply VCC respectively, and the tenth FET M10 grid is connected to
Bias voltage VPB1.13rd FET M13 source electrode connection power supply VCC, grid connection bias voltage VPB1, drain electrode connection
16th FET M16 drain electrode.16th FET M16 grid connects the 12nd FET M12 drain electrode, leakage
Pole is connected to the 21st FET M21 source electrodes.21st FET M21 grid is connected to the 13rd FET
M13 drain electrode, drain electrode are connected to the 23rd FET M23 source electrode.23rd FET M23 grid is connected to
13rd FET M13 drain electrode, drain electrode are connected to the 24th FET M24 grid and the 25th FET
M25 grid.22nd FET M22 source electrode is connected to power supply VCC, and grid is connected to the 13rd FET M13
Drain electrode, drain electrode be connected to the 24th FET M24 grid and the 25th FET M25 grid.20th
Four FET M24 source electrode is connected to power supply VCC, drains and is connected to the 25th FET M25 drain electrode, and the 25th
FET M25 source electrode is connected to the 21st FET M21 leakage together with the 23rd FET M23 source electrode
Pole.24th FET M24 drain electrode and the 25th FET M25 drain electrode are connected to OTP-H ends, and (i.e. excess temperature is protected
Protect the high level output end of unit).When OTP-H ends export high level, then LED drive circuit is closed, to prevent LED from driving core
Piece burns because working on overheat.
In above-mentioned over-temperature protection unit, the comparing unit includes：14th FET M14, the 15th FET
M15 and the 17th FET M17 and the 18th FET M18, wherein, the grid of the 14th FET M14
The reference voltage is inputted, the source electrode of the 14th FET M14 is connected to power supply, the 14th FET M14
Drain electrode be connected to grid and the drain electrode of the 17th FET M17, and the grid of the 18th FET M18
Pole, the grid of the 15th FET M15 input the negative temperature coefficient voltage, and source electrode is connected to the power supply, drains
It is connected to the drain electrode of the 18th FET M18.The source electrode of the 17th FET M17 and described 18th effect
Should pipe M18 source ground.
The switch control unit includes：16th FET M16, the 21st FET M21, the 22nd
Effect pipe M22, the 23rd FET M23, the 24th FET M24 and the 25th FET M25, wherein,
The grid of the 16th FET M16 is controlled by the output signal of the comparing unit, the 16th FET
M16 source electrode is connected with the source electrode of the 21st FET M21 and drain electrode, the leakage of the 16th FET M16
Pole connects the grid of the 21st FET M21, the grid of the 22nd FET M22 and described respectively
23rd FET M23 grid；The source electrode connection power supply of the 22nd FET M22, described second
12 FET M22 drain electrode connects the draining of the grid of the 23rd FET M23, the described 24th respectively
The grid of FET M24 grid and the 25th FET M25；The source of the 23rd FET M23
Pole connects the drain electrode of the source electrode and the 21st FET M21 of the 25th FET M25 respectively；Described
24 FET M24 drain electrode connects with the drain electrode of the 25th FET M25, and output switch control letter
Number.
The buffering capacitor cell includes：Delay cell and capacitor cell, the delay cell are used in LED drive chip
When temperature raises suddenly, the time that the switch control unit performs shutoff operation is postponed；The capacitor cell is miscellaneous for filtering out
Ripple, make the electric current of the over-temperature protection unit stable.
The linear current output adjustment unit includes the 20th FET M20, the 20th FET M20's
Source ground, grid are connected to the output end of the comparing unit, and drain output linearity electric current.
The excess temperature that LED drive chip can be achieved by the connection between simple multiple FETs by the present invention is adjusted,
Simple in construction, cost is cheap.
Embodiments of the present invention are the foregoing is only, are not intended to limit the scope of the invention, it is every to utilize this
The equivalent structure or equivalent flow conversion that description of the invention and accompanying drawing content are made, or directly or indirectly it is used in other correlations
Technical field, it is included within the scope of the present invention.
Claims (7)
- A kind of 1. LED drive chip, for driving LED light source, it is characterised in that including:Multiple in parallel and reference voltages are different Negative-feedback amplifier unit, in a certain operation time, negative-feedback amplifier unit described in only one exports amplifier electric current, wherein, often One negative-feedback amplifier unit includes：Negative-feedback amplifier module and anti-die block excessively, the negative-feedback amplifier module is according to a mistake Temperature protection point a voltage signal, it is described it is anti-cross die block protection under, export a constant electric current, the negative-feedback amplifier module Including：Electric current mirror module, phase compensation submodule and decompression submodule and the input overheat protector point voltage signal Overheat protector point input submodule, the electric current mirror module is used to provide one and the reference of the negative-feedback amplifier unit Voltage identical current mirror voltage, after the phase compensation submodule carries out phase compensation to the current mirror voltage, it is output to The decompression submodule, the decompression submodule is in parallel with the overheat protector point input submodule, when the overheat protector point When input submodule turns on, the decompression submodule short circuit, when the overheat protector point input submodule is ended, the decompression Submodule is depressured to the output voltage of the negative-feedback amplifier module, and the LED drive chip also includes overheat protector list Member, the over-temperature protection unit export the overheat protector point voltage signal when the LED drive chip temperature is too high to institute State the overheat protector point input submodule of negative-feedback amplifier unit, the over-temperature protection unit, including：Reference current inputs Unit, resistance adjustment unit, comparing unit, negative temperature coefficient voltage generating unit and linear current output adjustment unit, institute State reference current input block and produce an adjustable reference voltage of size with the resistance adjustment unit；The negative temperature system Number voltage generating unit produces the negative temperature coefficient voltage of a size reduction with the temperature rise of the LED drive chip；Institute Comparing unit is stated for the size of the negative temperature coefficient voltage and the reference voltage to control the negative temperature coefficient The output of voltage；Voltage change of the linear current output adjustment unit according to the negative temperature coefficient voltage generating unit, Exported linear current size is adjusted to control the operating current of the LED drive chip, the over-temperature protection unit is also wrapped Include：Capacitor cell is buffered, described buffering capacitor cell one end is connected to the input of the comparing unit, and the other end is connected to institute State the output end of comparing unit；The buffering capacitor cell includes：Delay cell and capacitor cell, the delay cell are used for When LED drive chip temperature raises suddenly, postpone the over-temperature protection unit switch control unit perform shutoff operation when Between；The capacitor cell is used for filtering clutter, makes the electric current of the over-temperature protection unit stable.
- 2. LED drive chip as claimed in claim 1, it is characterised in that the LED drive chip also includes：Invariable power list Member, for ensureing the LED drive chip in operated at constant power.
- 3. LED drive chip as claimed in claim 2, it is characterised in that the switch control unit is used for according to the ratio Compared with the comparison signal after the unit negative temperature coefficient voltage and the reference voltage, the LED drivings are turned on and off Chip；Bias current generation unit, bias current is provided for adjusting circuit for excess temperature.
- 4. LED drive chip as claimed in claim 1, it is characterised in that the circuit of the negative-feedback amplifier module is specially： From power supply inflow current to the 70th FET and the 71st FET, the source electrode of the 70th FET and The source electrode of 71 FETs is connected, one first bias voltage be connected to the 70th FET grid and the 71st The grid of effect pipe, the drain electrode of the 70th FET are connected to source electrode and the 72nd field-effect of the 73rd FET The source electrode of pipe；The grid of one reference voltage end the 72nd FET of connection and the grid of the 74th FET, the 7th The source electrode of 14 FETs is grounded after being connected with drain electrode；The drain electrode of 73rd FET connects the 75th FET Grid and the grid of drain electrode and the 76th FET, the source electrode of the 75th FET and the 76th field-effect The source electrode of pipe is grounded after being connected；The drain electrode of 72nd FET is connected to source electrode and the drain electrode of the 77th FET, And the 77th the source electrode of FET be connected with drain electrode, the grid of the 77th FET connects after the 35th resistance It is connected to the drain electrode of the 71st FET and the drain electrode of the 78th FET；The source electrode of 78th FET connects Ground, and grid connects the drain electrode of the 77th FET；The drain electrode of 71st FET and the 79th FET Drain electrode be connected with the output end of negative-feedback amplifier unit.
- 5. LED drive chip as claimed in claim 3, it is characterised in that the LED drive chip also includes：Overheat protector Point adjustment unit, for adjusting the overheat protector point of the LED drive chip, the overheat protector point adjustment unit includes：Fortune Amplification module, current mirror module, Current amplifier module, variable resistance unit, the amplifier module are used to provide band load voltage, ensured There is provided in multiple loads or when loading larger stable voltage, the electric current that the current mirror module exports to the amplifier module There is provided an image current, the Current amplifier module be used for the image current is amplified by preset multiple, it is described can Become resistance unit to be used to set overheat protector point size.
- 6. LED drive chip as claimed in claim 3, it is characterised in that the switch control unit includes：16th effect Ying Guan, the 21st FET, the 22nd FET, the 23rd FET, the 24th FET and 25 FETs, wherein, the grid of the 16th FET is controlled by the output signal of the comparing unit, institute State the source electrode of the 16th FET with the source electrode of the 21st FET and drain electrode to be connected, the 16th field-effect The drain electrode of pipe connects the grid of the 21st FET, the grid of the 22nd FET and described respectively The grid of 23rd FET；The source electrode connection power supply of 22nd FET, the 22nd field-effect The drain electrode of pipe connect respectively the draining of the grid of the 23rd FET, the grid of the 24th FET and The grid of 25th FET；The source electrode of 23rd FET connects the 25th effect respectively Should pipe source electrode and the 21st FET drain electrode；The drain electrode and the described 20th of 24th FET The drain electrode connection of five FETs, and output switch control signal.
- 7. a kind of LED photovoltaic module, the LED photovoltaic module includes substrate, and the LED light source and LED on the substrate drive Dynamic circuit, the LED drive circuit include LED drive chip, it is characterised in that the LED drive chip is such as claim 1 To the LED drive chip described in 6 any one.
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| CN201510922035.5A CN105636263B (en) | 2015-12-11 | 2015-12-11 | LED photovoltaic module and its driving chip |
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| CN109089345B (en) * | 2018-08-14 | 2024-03-22 | 上海艾为电子技术股份有限公司 | Over-temperature protection circuit and electronic equipment applying same |
| CN113595371A (en) * | 2021-07-28 | 2021-11-02 | 深圳市长运通半导体技术有限公司 | Adjustable over-temperature protection integrated circuit |
| CN113595416B (en) * | 2021-07-28 | 2022-09-06 | 深圳市长运通半导体技术有限公司 | High-voltage-resistant voltage-stabilizing integrated circuit |
| CN115397063B (en) * | 2022-10-27 | 2023-03-28 | 中科(深圳)无线半导体有限公司 | miniLED drive circuit |
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