CN105633200A - Electrochemical treatment method for surface etching of copper indium gallium selenide thin film - Google Patents
Electrochemical treatment method for surface etching of copper indium gallium selenide thin film Download PDFInfo
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Abstract
The invention relates to the technical field of solar cells, and specifically discloses an electrochemical treatment method for surface etching of a copper indium gallium selenide thin film. The method includes the steps of: placing a copper indium gallium selenide thin film in an electrochemical workstation after selenylation, only connecting a Mo layer with a working electrode, and soaking in absolute ethyl alcohol; a treatment solution being a mixed solution of a salt, an inorganic acid and deionized water, the salt being any one of a sodium salt, a kali salt, a magnesium salt, a zinc salt or a copper salt, and a pH value of the treatment solution being adjusted by the inorganic acid to be 1 to 6; putting the copper indium gallium selenide thin film in the treatment solution, applying an electrical signal, taking the thin film out after treatment, using deionized water to wash the thin film, and drying the thin film with high-purity nitrogen, the electrical signal being any one of a cyclic voltammetry electrical signal, a constant voltage electrical signal, a constant current electrical signal, a pulse voltage electrical signal or a pulse current electrical signal. The method provided by the invention can selectively dissolve a secondary phase (CuxSe) on the surface of the copper indium gallium selenide tin film, optimizes the surface quality of the thin film, and overcomes the disadvantage that a corrosion solution system is harmful to a human body and is not environment-friendly, thereby facilitating industrial popularization.
Description
Technical field
The invention belongs to technical field of solar batteries, particularly to the electrochemical process for treating of a kind of CIGS thin-film surface etch.
Background technology
Solar energy is the energy the abundantest in numerous regenerative resource, and the whole world sunlight energy of a hour is equivalent to the earth energy consumption of a year, is significantly larger than wind energy, underground heat, water power, ocean energy, bioenergy equal energy source. Solar energy proportion in future source of energy structure is by increasing, and this proportion of conservative estimation can more than 60% in 2100. Therefore, solaode research is the important topic of future source of energy development.
CIGS (CuInxGaySez, it is possible to including sulfur, be abbreviated as CIGS) advantage such as thin film photovoltaic panel is high with its conversion efficiency, long-time stability are good, capability of resistance to radiation is strong becomes the study hotspot of photovoltaic circle, it is expected to become follow-on cheap photovoltaic panel.
CIGS thin-film photovoltaic panel is multi-layer film structure, generally include: substrate, back electrode, CuInGaSe absorbed layer, cushion, Window layer, transparency conducting layer etc., wherein CuInGaSe absorbed layer is the ingredient of solar energy photovoltaic panel most critical, determines the quality of its performance. Conventional industry is prepared in the technology of copper indium gallium selenide cell photovoltaic panel, selenizing method after more employing preformed layers, and the advantage of this method is, equipment requirements is lower and easy large-scale pipeline produces. But, this method also easily produces the dephasign of rich Cu, such as Cu after selenization on CIGS thin-film surface2Se. These dephasigns have low bandwidth high conductivity, the performance of serious harm battery component, it is therefore desirable to by special method modification of surfaces, eliminate rich Cu dephasign, improve battery performance.
Patent CN102694068A discloses a kind of method of CIGS thin-film finishing, CIGS thin-film deposits certain thickness metallic film or alloy firm, it is placed on high annealing under atmosphere reactive again, the copper selenium secondary phase (Cu of the metal or alloy of deposition and copper and indium gallium film surfacexSe) reaction forms the copper selenium multi-element metal compound of broad-band gap, reaches to remove CuxThe purpose of Se. The metal or alloy of deposition includes Zn, Al, Sn, Sb, Bi and their alloy. This technique eliminates CuxSe, but be introduced into new element and can bring the lifting of equipment and materials process costs.
Patent CN103151429A discloses a kind of chemical treatment method for improving CIGS thin-film material surface quality, comprise: step 1, the sample being coated with Mo layer and CIGS thin film in glass substrate is put in alcoholic solution immersion 5��10min, after taking-up at 30��50 DEG C heat treatment 30��60s; Step 2, the preparation chemical pretreatment solution containing deionized water, ammonia and zinc salt, wherein, ammonia concn is 3mol/L, and zinc salt concentration is 0��1 �� 10-2Mol/L, by the sample after employing heat treatment in step 1, puts in above-mentioned chemical pretreatment solution, takes out sample, dry up sample surfaces residual solution with drying nitrogen, complete the chemical treatment of CIGS thin film material surface quality after 7-10min infiltrates. This technology is mainly used in filling Cu vacancy, and the dephasign modification effect for rich Cu is very limited.
B.Canavaetal. (JournalofPhysicsandChemistryofSolids, 2003,64, E1791-E1796) method reporting a kind of chemical method etching CIGS film surface richness Cu dephasign, the method adopts potassium cyanide (KCN), bromine water (Br2) and their mixture, the CIGS surface of rich Cu is carried out immersion corrosion. Result shows, KCN has the effect well eliminating rich Cu dephasign; And bromine water and the mixture of the two also have certain etching effect, but all the other untoward reaction can be caused, it is necessary to accurately control condition. Adopt perform etching in this way simple to operate, but KCN itself is extremely toxic substance, and bromine water falls within harmful substance volatile, maladorous, and the application of large-scale industry brings environmental issue.
Summary of the invention
The main purpose of the present invention is for the complicated operation existed in above-mentioned prior art and is readily incorporated the problem that other impurity, environmental pollution are serious, relatively costly, the electrochemical process for treating of a kind of CIGS thin-film surface etch is provided, the copper selenium secondary phase (Cu on CIGS thin-film surface can be removedxThe dephasign such as Se), injures CIGS thin-film simultaneously hardly.
In order to realize foregoing invention purpose, the technical solution used in the present invention is as follows:
The electrochemical process for treating of CIGS thin-film surface etch, comprises the steps:
Step (1): be placed on electrochemical workstation after CIGS thin-film selenizing, only Mo layer connects working electrode, soaks 1��2min, remove surface particles impurity in dehydrated alcohol;
Step (2): preparation processes solution, and described process solution is the mixed solution of the salt of 0.001��1M/L, mineral acid and deionized water, and described salt is any one of sodium salt, potassium salt, magnesium salt, zinc salt or mantoquita; It is 1��6 that described mineral acid adjustment processes the pH value of solution;
Step (3): the CIGS thin-film that step (1) processes puts into the process solution that step (2) prepares, apply the signal of telecommunication, described CIGS thin-film is taken out after processing 1��500s, with deionized water rinsing, high pure nitrogen dries up, and the described signal of telecommunication is any one of the cyclic voltammetric signal of telecommunication, the constant voltage signal of telecommunication, Constant Electric Current signal, the pulse voltage signal of telecommunication or the pulse current signal of telecommunication.
As area of solar cell, still not about the report of the method electrochemically processing solar battery obsorbing layer thin film. The present inventor is through long term test, by screening the electrochemical treatments solution obtaining the present invention, CIGS thin-film is processed by electrochemical method, can the secondary phase (such as CuxSe) on selective dissolution CIGS thin-film surface, the surface characteristic of thin film and the quality of solar cell PN junction can be significantly improved, process solution environmental sound simultaneously, recycling rate of waterused is high, technique is simple, and cost is low, and the processing procedure time is short and can accurately control. The method of the present invention, CIGS thin-film substrate can be both rigid basement, such as soda-lime glass, it is also possible to is flexible substrates, such as polyimides, rustless steel, molybdenum foil, aluminium foil, copper foil or titanium foil sheet etc. The deposition process of CIGS thin-film can be sputtering, altogether evaporation, plating and spin coating etc.
As preferably, the electrochemical process for treating of aforesaid CIGS thin-film surface etch, the concentration of described salt is 0.3��0.5M/L. By preferred afore mentioned concentration, both making to process solution has good electric conductivity, avoids again overetch that CIGS thin-film is caused damage.
As preferably, the electrochemical process for treating of aforesaid CIGS thin-film surface etch, it is 1 that described mineral acid adjustment processes the pH value of solution. Pass through preferable ph, it is possible to be further ensured that process solution has good electric conductivity.
As it is preferred that, the electrochemical process for treating of aforesaid CIGS thin-film surface etch, in the process solution of step (2), the anion of described salt is identical with the anion of described mineral acid. Select identical anion, it is possible to raising processes the stability of solution further.
As further preferred, the electrochemical process for treating of aforesaid CIGS thin-film surface etch, in the process solution of step (2), the anion of described salt and mineral acid is selected from any one of sulfate ion, chloranion, nitrate ion, phosphate anion or oxalate denominationby.
As further preferred, the electrochemical process for treating of aforesaid CIGS thin-film surface etch, in the process solution of step (2), the anion of described salt and mineral acid is sulfate ion. By aforementioned preferably, be conducive to the dissolving of copper to be attached to CIGS thin-film surface without producing precipitation, it is to avoid secondary pollution.
As preferably, the electrochemical process for treating of aforesaid CIGS thin-film surface etch, the described signal of telecommunication is selected from any one of the following signal of telecommunication:
A. the cyclic voltammetric signal of telecommunication, the voltage range of the described cyclic voltammetric signal of telecommunication is-1.5��1.5V;
B. the constant voltage signal of telecommunication, the voltage range of the described constant voltage signal of telecommunication is 0.1��3V;
C. Constant Electric Current signal, the current range of described Constant Electric Current signal is 1��1000mA/cm2;
D. the pulse voltage signal of telecommunication, the voltage range of the described pulse voltage signal of telecommunication is 0.1��1.5V, and the burst length is 5ms, and interval time is 50ms;
E. the pulse current signal of telecommunication, the current range of the described pulse current signal of telecommunication is 0.01��50mA/cm2, the burst length is 5ms, and interval time is 50ms.
CIGS thin-film also contains copper product, therefore, when selecting the signal of telecommunication, the copper-rich phase Cu that etching conductive is good should be consideredxSe, selects the signal of telecommunication of appropriately sized scope simultaneously again, both effectively could be passivated defect and not injure CIGS thin-film itself. The electrochemical process for treating of the CIGS thin-film surface etch of the present invention, by selecting the aforementioned signal of telecommunication, and screen voltage range and current range further, can not only reach to optimize the purpose of CIGS film surface character, produce injury without to CIGS thin-film surface.
As it is preferred that, the electrochemical process for treating of aforesaid CIGS thin-film surface etch, the voltage range of the described cyclic voltammetric signal of telecommunication is-0.3��0.5V.
As preferably, the electrochemical process for treating of aforesaid CIGS thin-film surface etch, the operating temperature of described step (3) is 18��25 DEG C.
As preferably, the electrochemical process for treating of aforesaid CIGS thin-film surface etch, described electrochemical workstation includes working electrode, reference electrode and gauze platinum electrode, described reference electrode is any one of Ag electrode or AgCl electrode, and described reference electrode potential relative standard hydrogen electromotive force is 0.198V.
Compared with prior art, the invention has the beneficial effects as follows:
One, the electrochemical process for treating of the CIGS thin-film surface etch of the present invention, CIGS film surface is etched by electrochemical method, can the secondary phase (such as CuxSe) on selective dissolution CIGS thin-film surface, optimize the surface quality of thin film;
Two, the electrochemical process for treating of the CIGS thin-film surface etch of the present invention, what the present invention adopted processes solution is the acid solution containing salt, corresponding mineral acid and deionized water, compared with the KCN system that prior art uses, overcome that etchant solution system is harmful, shortcoming not environmentally, environmental friendliness and solution system temperature, stable system, recycling rate of waterused height, and do not contain impurity that film quality is influential;
Three, the electrochemical process for treating of the CIGS thin-film surface etch of the present invention, processing method is simple and is prone to accurate control, the multiple signal of telecommunication can be adopted, such as cyclic voltammetric, constant voltage, constant current, pulse voltage or pulse current etc., the process time needed for electrochemical etching process is short, is conducive to industrialization promotion.
Accompanying drawing explanation
Fig. 1 is the equipment schematic diagram of electrochemical process for treating of the present invention;
Fig. 2 is the scanning electron microscope (SEM) photograph on the CIGS thin-film surface in embodiment 1 after selenized annealing;
Fig. 3 is the Raman spectrogram on the CIGS thin-film surface in embodiment 1 after etching;
Fig. 4 is the scanning electron microscope (SEM) photograph on the CIGS thin-film surface in embodiment 1 after etching;
Fig. 5 is the scanning electron microscope (SEM) photograph on the CIGS thin-film surface in embodiment 2 after etching;
Fig. 6 is the scanning electron microscope (SEM) photograph on the CIGS thin-film surface in embodiment 3 after etching.
Wherein, in Fig. 1,1-electrochemical workstation, 2-CIGS thin-film, 3-substrate, 4-Mo layer, 5-reference electrode, 6-gauze platinum electrode, 7-processes solution.
Detailed description of the invention
Below in conjunction with detailed description of the invention, the foregoing invention content of the present invention is described in further detail.
But this should not being interpreted as, the scope of the above-mentioned theme of the present invention is only limitted to following embodiment. Without departing from the idea case in the present invention described above, according to ordinary skill knowledge and customary means, make various replacement and change, all should be included within the scope of the invention.
In following example, as it is shown in figure 1, the CIGS thin-film 2 of pretreatment is connected in electrochemical workstation 1 by the Mo layer 4 on substrate 3, CIGS thin-film 2 is immersed in treatment fluid 7, carries out Electrochemical Modification. Electrochemical workstation 1 takes three electrode mode of operations, includes reference electrode 5 and gauze platinum electrode 6, and wherein, reference electrode 5 is any one of Ag electrode or AgCl electrode, and the electromotive force relative standard hydrogen electromotive force of reference electrode 5 is 0.198V.
Embodiment 1 the present embodiment is electrochemical method etching CIGS film surface
On soda-lime glass, deposit thickness is the metal Mo of 1 ��m, adopts the CIGS thin-film that method deposit thickness is 1 ��m 2 of electrochemical deposition, be then annealed in quartz tube furnace on Mo layer 4. The scanning electron microscope (SEM) photograph of the CIGS thin-film 2 after selenizing is shown in Fig. 2.
Step (1): the CIGS thin-film 2 after selenizing is connected to the working electrode of electrochemical workstation 1, and coupling part only has Mo layer 4, soaks 1��2 minute in ethanol solution, removes the granule foreign that surface speckles with;
Step (2): preparation processes solution 7, processes the mixed solution that solution 7 is potassium sulfate, sulphuric acid and deionized water, and potassium sulfate concentration in mixed solution is 0.5M/L, and sulfur acid for adjusting pH is 1;
Step (3): the CIGS thin-film 2 that step (1) processes puts into the process solution 7 that step (2) prepares, cyclic voltammetric pattern is adopted to apply scanning voltage-0.3��0.5V, sweep speed is 0.05V/s, and sweep time is 160s. Operating temperature is 20 DEG C.
As seen from Figure 3, the secondary phase (such as CuxSe) on the CIGS thin-film surface after electrochemical treatments significantly reduces and even disappears, as seen from Figure 4, after electrochemical surface etching CIGS thin film, the reasonable CIGS phase of crystallization and OVC or ODC phase are exposed in its surface.
Embodiment 2 the present embodiment is electrochemical method etching CIGS film surface
On soda-lime glass, deposit thickness is the metal Mo of 1 ��m, adopts the CIGS thin-film that method deposit thickness is 1 ��m 2 of electrochemical deposition, be then annealed in quartz tube furnace on Mo layer 4.
Step (1): the CIGS thin-film 2 after selenizing is connected to the working electrode of electrochemical workstation 1, and coupling part only has Mo layer 4, soaks 1��2 minute in ethanol solution, removes the granule foreign that surface speckles with;
Step (2): preparation processes solution 7, processes the mixed solution that solution 7 is sodium sulfate, sulphuric acid and deionized water, and sodium sulfate concentration in mixed solution is 0.35M/L, and sulfur acid for adjusting pH is 1;
Step (3): the CIGS thin-film 2 that step (1) processes puts into the process solution 7 that step (2) prepares, adopts constant voltage mode to apply the signal of telecommunication, and voltage is 0.5V, and the time is 200s. Operating temperature is 18 DEG C.
Fig. 5 is it can be seen that the CIGS thin-film appearance structure obtained after electrochemical surface etching processing is homogeneous, and through Raman spectral detection, the CIGS thin film surface that the present embodiment obtains is without secondary phase (such as CuxSe).
Embodiment 3 the present embodiment is electrochemical method etching CIGS film surface
In molybdenum foil, deposit thickness is the metal Mo of 1 ��m, adopts the CIGS thin-film that method deposit thickness is 1 ��m 2 of electrochemical deposition, be then annealed in quartz tube furnace on Mo layer 4.
Step (1): the CIGS thin-film 2 after selenizing is connected to the working electrode of electrochemical workstation 1, and coupling part only has Mo layer 4, soaks 1��2 minute in ethanol solution, removes the granule foreign that surface speckles with;
Step (2): preparation processes solution 7, processes the mixed solution that solution 7 is zinc sulfate, sulphuric acid and deionized water, and zinc sulfate concentration in mixed solution is 0.5M/L, and sulfur acid for adjusting pH is 1;
Step (3): the CIGS thin-film 2 that step (1) processes puts into the process solution 7 that step (2) prepares, adopts constant current mode to apply the signal of telecommunication, and electric current is 20mA/cm2, the time is 100s. Operating temperature is 25 DEG C.
Fig. 6 is it can be seen that the CIGS thin-film appearance structure obtained after electrochemical surface etching processing is homogeneous, and through Raman spectral detection, the CIGS thin film surface that the present embodiment obtains without secondary phase (such as CuxSe)��
Step (2) preparation that embodiment 4��embodiment 14 embodiment 4��embodiment 14 etches CIGS film surface for electrochemical method processes solution, and step (3) applies the signal of telecommunication, and all the other steps are identical with embodiment 1. It is specifically shown in table 1.
Table 1. embodiment 4��embodiment 14
Claims (10)
1. the electrochemical process for treating of CIGS thin-film surface etch, it is characterised in that comprise the steps:
Step (1): be placed on electrochemical workstation after CIGS thin-film selenizing, only Mo layer connects working electrode, soaks 1��2min, remove surface particles impurity in dehydrated alcohol;
Step (2): preparation processes solution, and described process solution is the mixed solution of the salt of 0.001��1M/L, mineral acid and deionized water, and described salt is any one of sodium salt, potassium salt, magnesium salt, zinc salt or mantoquita; It is 1��6 that described mineral acid adjustment processes the pH value of solution;
Step (3): the CIGS thin-film that step (1) processes puts into the process solution that step (2) prepares, apply the signal of telecommunication, described CIGS thin-film is taken out after processing 1��500s, with deionized water rinsing, high pure nitrogen dries up, and the described signal of telecommunication is any one of the cyclic voltammetric signal of telecommunication, the constant voltage signal of telecommunication, Constant Electric Current signal, the pulse voltage signal of telecommunication or the pulse current signal of telecommunication.
2. the electrochemical process for treating of CIGS thin-film surface etch according to claim 1, it is characterised in that the concentration of described salt is 0.3��0.5M/L.
3. the electrochemical process for treating of CIGS thin-film surface etch according to claim 1, it is characterised in that it is 1 that described mineral acid adjustment processes the pH value of solution.
4. the electrochemical process for treating of CIGS thin-film surface etch according to claim 1, it is characterised in that in the process solution of step (2), the anion of described salt is identical with the anion of described mineral acid.
5. the electrochemical process for treating of CIGS thin-film surface etch according to claim 4, it is characterized in that, in the process solution of step (2), the anion of described salt and mineral acid is selected from any one of sulfate ion, chloranion, nitrate ion, phosphate anion or oxalate denominationby.
6. the electrochemical process for treating of CIGS thin-film surface etch according to claim 5, it is characterised in that in the process solution of step (2), the anion of described salt and mineral acid is sulfate ion.
7. the electrochemical process for treating of the CIGS thin-film surface etch according to any one of claim 1��6, it is characterised in that the described signal of telecommunication is selected from any one of the following signal of telecommunication:
A. the cyclic voltammetric signal of telecommunication, the voltage range of the described cyclic voltammetric signal of telecommunication is-1.5��1.5V;
B. the constant voltage signal of telecommunication, the voltage range of the described constant voltage signal of telecommunication is 0.1��3V;
C. Constant Electric Current signal, the current range of described Constant Electric Current signal is 1��1000mA/cm2;
D. the pulse voltage signal of telecommunication, the voltage range of the described pulse voltage signal of telecommunication is 0.1��1.5V, and the burst length is 5ms, and interval time is 50ms;
E. the pulse current signal of telecommunication, the current range of the described pulse current signal of telecommunication is 0.01��50mA/cm2, the burst length is 5ms, and interval time is 50ms.
8. the electrochemical process for treating of CIGS thin-film surface etch according to claim 7, it is characterised in that the voltage range of the described cyclic voltammetric signal of telecommunication is-0.3��0.5V.
9. the electrochemical process for treating of CIGS thin-film surface etch according to claim 1, it is characterised in that the operating temperature of described step (3) is 18��25 DEG C.
10. the electrochemical process for treating of CIGS thin-film surface etch according to claim 1, it is characterized in that, described electrochemical workstation includes working electrode, reference electrode and gauze platinum electrode, described reference electrode is any one of Ag electrode or AgCl electrode, and described reference electrode potential relative standard hydrogen electromotive force is 0.198V.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050215079A1 (en) * | 2002-04-29 | 2005-09-29 | Stephane Taunier | Method for making thin-film semiconductors based on i-III-vi<sb>2</sb> compounds, for photovoltaic applications |
| CN102694068A (en) * | 2012-05-23 | 2012-09-26 | 中南大学 | Method for surface modification of copper indium gallium diselenide (Cu(In, Ga)Se2) film |
| CN102741458A (en) * | 2009-09-08 | 2012-10-17 | 西安大略大学 | Electrochemical method of producing copper indium gallium diselenide (cigs) solar cells |
| CN103151429A (en) * | 2013-03-27 | 2013-06-12 | 上海空间电源研究所 | Chemical treatment method for improving quality of surface layer of copper-indium-gallium-selenium thin film material |
| CN103779438A (en) * | 2012-10-22 | 2014-05-07 | 中物院成都科学技术发展中心 | Method for preparing CuInxGaySez prefabricated layer by electrochemical deposition |
-
2014
- 2014-11-06 CN CN201410619912.7A patent/CN105633200B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050215079A1 (en) * | 2002-04-29 | 2005-09-29 | Stephane Taunier | Method for making thin-film semiconductors based on i-III-vi<sb>2</sb> compounds, for photovoltaic applications |
| CN102741458A (en) * | 2009-09-08 | 2012-10-17 | 西安大略大学 | Electrochemical method of producing copper indium gallium diselenide (cigs) solar cells |
| CN102694068A (en) * | 2012-05-23 | 2012-09-26 | 中南大学 | Method for surface modification of copper indium gallium diselenide (Cu(In, Ga)Se2) film |
| CN103779438A (en) * | 2012-10-22 | 2014-05-07 | 中物院成都科学技术发展中心 | Method for preparing CuInxGaySez prefabricated layer by electrochemical deposition |
| CN103151429A (en) * | 2013-03-27 | 2013-06-12 | 上海空间电源研究所 | Chemical treatment method for improving quality of surface layer of copper-indium-gallium-selenium thin film material |
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