CN105632667A - Preparation method of resistor protection slurry - Google Patents

Preparation method of resistor protection slurry Download PDF

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Publication number
CN105632667A
CN105632667A CN201410600515.5A CN201410600515A CN105632667A CN 105632667 A CN105632667 A CN 105632667A CN 201410600515 A CN201410600515 A CN 201410600515A CN 105632667 A CN105632667 A CN 105632667A
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CN
China
Prior art keywords
preparation
protection slurry
resistance protection
described step
slurry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410600515.5A
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Chinese (zh)
Inventor
王耀斌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shaanxi Shengmai Petroleum Co Ltd
Original Assignee
Shaanxi Shengmai Petroleum Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shaanxi Shengmai Petroleum Co Ltd filed Critical Shaanxi Shengmai Petroleum Co Ltd
Priority to CN201410600515.5A priority Critical patent/CN105632667A/en
Publication of CN105632667A publication Critical patent/CN105632667A/en
Pending legal-status Critical Current

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Abstract

The invention provides a preparation method of resistor protection slurry, belonging to the field of preparation of electronic components. The preparation method comprises the following steps: uniformly mixing 60%-70% of PbO, 20%-30% of SiO2 and 5%-15% of B2O3 and adding the mixture in a ceramic crucible; melting and performing water quenching in purified water; processing into particles with a grinder; then adding pigments for coloring and grinding to obtain glass powder with an available particle size for later use; uniformly mixing 45%-55% of terpilenol, 20%-30% of butyl carbitol, 5%-10% of ethylcellulose to obtain an organic carrier for later use; taking 75%-80% of the glass powder and 20%-25% of the organic carrier and mixing uniformly; adequately stirring and dispersing with a disperser; then repeatedly rolling for several times on a three-high mill; and detecting fineness with a scraper blade until the fineness is not more than 5[mu]m. Through improvement on the preparation process of the protection slurry and the quantitative control on all components, the preparation operation of the resistor protection slurry becomes simpler and easier.

Description

A kind of preparation method of resistance protection slurry
Technical field
The invention belongs to electronic component preparation field, the preparation method particularly relating to a kind of resistance protection slurry.
Background technology
Continuous progressive along with science and technology, the prescription for electronic element improves day by day, along with it is also proposed new requirement for the production technology of electronic component and materials etc. The feature of chip resistor development is that size is more and more less. Therefore the performance requirement of thick film ink is more and more higher, as resistance value stability, burn till the uniformity etc. of film, the material of resistive film, based on ruthenate system, also has the resistive film material adopting silver palladium system. For guaranteeing stablizing of resistive film performance, improve its resistance to wear, anticorrosive and antioxygenic property, almost all of capsule resistor element all have employed glass encapsulating technology, and resistive film is protected. But implementing in glass encapsulating process, the softening flowing of glass and resistive film create and mutually soak into, and can cause the drift of resistance value, therefore the making performance of the design of glass ingredient and slurry, to the resistance of resistive film it is critical that processing step.
Summary of the invention
It is desirable to provide in the preparation method of resistance protection slurry simple to operation.
The preparation method of a kind of resistance protection slurry, it is characterised in that comprise the steps: (1) Sio by Pbo, 20%-30% of 60%-70%2, 5%-15% B2O3After Homogeneous phase mixing, load ceramic crucible, shrend in pure water after founding; Processing granulating through grinding machine, being subsequently adding painted pigment, to be ground to the glass dust of available particle diameter standby; (2) by the terpineol of 45%-55%, the butyl carbitol of 20%-30%, 5%-10% ethyl cellulose mix homogeneously be that organic carrier is standby; (3) after taking the organic carrier Homogeneous phase mixing of the glass dust of 75%-80%, 20%-25%, being sufficiently stirred for dispersion with dispersion machine, then on three-high mill, rolling for several times, detects fineness��5 ��m with Hegman fineness grind repeatedly.
The preparation method of a kind of resistance protection slurry of the present invention, it is characterised in that the glass melting temperature in described step (1) is 1300 ~ 1350 DEG C, temperature retention time is 1h-1.5h.
The preparation method of a kind of resistance protection slurry of the present invention, it is characterised in that the granulating in step (1) is sized to mean diameter < 30 ��m.
The preparation method of a kind of resistance protection slurry of the present invention, it is characterised in that the glass dust in described step (1) can use size to be��5 ��m.
The preparation method of a kind of resistance protection slurry described in the present invention 1, it is characterised in that in described step (3), jitter time is 6h.
The preparation method of a kind of resistance protection slurry of the present invention, it is characterised in that in described step (3), rolling number of times is five times.
The preparation method of a kind of resistance protection slurry of the present invention; improvement by the preparation technology to protective paste; and the fixing quantity to each component so that the operation preparing resistance protection slurry is more simple, easily operated, and is suitable for large range promotion use.
Detailed description of the invention
The preparation method of a kind of resistance protection slurry, comprises the steps: (1) Sio by Pbo, 20%-30% of 60%-70%2, 5%-15% B2O3After Homogeneous phase mixing, load ceramic crucible, shrend in pure water after founding; Processing granulating through grinding machine, being subsequently adding painted pigment, to be ground to the glass dust of available particle diameter standby; (2) by the terpineol of 45%-55%, the butyl carbitol of 20%-30%, 5%-10% ethyl cellulose mix homogeneously be that organic carrier is standby; (3) after taking the organic carrier Homogeneous phase mixing of the glass dust of 75%-80%, 20%-25%, being sufficiently stirred for dispersion with dispersion machine, then on three-high mill, rolling for several times, detects fineness��5 ��m with Hegman fineness grind repeatedly.
The preparation method of a kind of resistance protection slurry of the present invention, the glass melting temperature in described step (1) is 1300 ~ 1350 DEG C, and temperature retention time is 1h-1.5h. Granulating in step (1) is sized to mean diameter < 30 ��m. Glass dust in described step (1) can use size to be��5 ��m. In described step (3), jitter time is 6h. In described step (3), rolling number of times is five times. When glass is in the process being carried out encapsulating protection, resistive film will form fine and close combination interface with glass. But owing to resistive film is the accumulation sintered body of powdered form, unavoidably there is gap in granule. Cause that protection glass will infiltrate in resistive film and spread, cause the drift of resistance value. Carry out laser resistor trimming after first time encapsulating protection, laser resistor trimming process causes micro-crack and stress unavoidably to glass-film. When implementing secondary encapsulating protection, the drawbacks described above caused in laser resistor trimming can be eliminated on the one hand, protection film strength can be made to be further strengthened on the other hand.

Claims (6)

1. the preparation method of a resistance protection slurry, it is characterised in that comprise the steps: (1) Sio by Pbo, 20%-30% of 60%-70%2, 5%-15% B2O3After Homogeneous phase mixing, load ceramic crucible, shrend in pure water after founding; Processing granulating through grinding machine, being subsequently adding painted pigment, to be ground to the glass dust of available particle diameter standby; (2) by the terpineol of 45%-55%, the butyl carbitol of 20%-30%, 5%-10% ethyl cellulose mix homogeneously be that organic carrier is standby; (3) after taking the organic carrier Homogeneous phase mixing of the glass dust of 75%-80%, 20%-25%, being sufficiently stirred for dispersion with dispersion machine, then on three-high mill, rolling for several times, detects fineness��5 ��m with Hegman fineness grind repeatedly.
2. the preparation method of a kind of resistance protection slurry as claimed in claim 1, it is characterised in that the glass melting temperature in described step (1) is 1300 ~ 1350 DEG C, and temperature retention time is 1h-1.5h.
3. the preparation method of a kind of resistance protection slurry as claimed in claim 1, it is characterised in that the granulating in described step (1) is sized to mean diameter < 30 ��m.
4. the preparation method of a kind of resistance protection slurry as claimed in claim 1, it is characterised in that the glass dust in described step (1) can use size to be��5 ��m.
5. the preparation method of a kind of resistance protection slurry as claimed in claim 1, it is characterised in that in described step (3), jitter time is 6h.
6. the preparation method of a kind of resistance protection slurry as claimed in claim 1, it is characterised in that in described step (3), rolling number of times is five times.
CN201410600515.5A 2014-10-31 2014-10-31 Preparation method of resistor protection slurry Pending CN105632667A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410600515.5A CN105632667A (en) 2014-10-31 2014-10-31 Preparation method of resistor protection slurry

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410600515.5A CN105632667A (en) 2014-10-31 2014-10-31 Preparation method of resistor protection slurry

Publications (1)

Publication Number Publication Date
CN105632667A true CN105632667A (en) 2016-06-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410600515.5A Pending CN105632667A (en) 2014-10-31 2014-10-31 Preparation method of resistor protection slurry

Country Status (1)

Country Link
CN (1) CN105632667A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106517805A (en) * 2016-11-14 2017-03-22 宜兴市晶科光学仪器有限公司 Preparation method for low-melting-point glass powder

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106517805A (en) * 2016-11-14 2017-03-22 宜兴市晶科光学仪器有限公司 Preparation method for low-melting-point glass powder

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Application publication date: 20160601

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