CN105632663A - Preparation method of PTCR - Google Patents
Preparation method of PTCR Download PDFInfo
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- CN105632663A CN105632663A CN201410603095.6A CN201410603095A CN105632663A CN 105632663 A CN105632663 A CN 105632663A CN 201410603095 A CN201410603095 A CN 201410603095A CN 105632663 A CN105632663 A CN 105632663A
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Abstract
The invention relates to a preparation method of a PTCR, belonging to the field of preparation of electronic components. The preparation method comprises the following steps: mixing BaTiO3, Y2O3, Mn(No3)2, Li2CO3 and the like in proportion, to obtain available material; uniformly mixing the available material, then stirring and grinding; drying the discharged material, pelleting, carrying out dry pressing forming, and batching out; firing at 1100-1180 DEG C, then holding the temperature, and then further rising the temperature; firing at 1300-1350 DEG C and then holding the temperature for 20min; performing plane polishing, nickeling after aging, and covering with a surface electrode after reaging; carrying out cylindrical grinding temperature cycle to prepare a thermistor. Through improving the process and adopting a Y2O3-doped barium titanate substrate formula, the preparation method has good process stability and is suitable for production of miniaturized PTCRs; and the prepared thermistor has sensitive response, high current intensity resistance, good resistance stability, is simple to operate and can be generalized and used in large scale.
Description
Technical field
The invention belongs to the preparation field of electronic component, the preparation method particularly relating to a kind of PTCR critesistor.
Background technology
Along with the continuous progress of science and technology, the use for new technique material gets more and more, and is not also interrupted for the research of overcurrent protection positive temperature coefficient thermistor in the communications industry. The promulgation of these standards makes PTCR thermal resistor obtain specification in the application of the communications industry, has also promoted PTCR thermal resistor in the development of the communications industry simultaneously. Although highs polymer PTCR thermal resistor has self-heating few, but free forming, sensitivity advantages of higher, but performance degradation after there is also current noise rush of current big, resistance to, resistance long-time stability are poor, when losing efficacy easily caused by problems such as naked lights.
Summary of the invention
Present invention seek to address that the problems referred to above, it is provided that the preparation method of a kind of ceramic mould PTCR critesistor.
The preparation method of a kind of PTCR critesistor, it is characterised in that comprise the steps: that (1) is by Ba(1-x-y-z)SrxPbyCazTiO3+aY2O3+bG+cMn(NO3)2+dLi2CO3Mix by proportioning, wherein: x=2% ~ 11%; Y=0.5% ~ 4%; Z=0.5% ~ 5%; A=0.2% ~ 0.3%; B=1% ~ 2%; C=0.04% ~ 0.08%; D=0.01% ~ 0.08%; G is AST glassy phase, makes and gets the raw materials ready; (2) will get the raw materials ready agitation grinding after mix homogeneously, discharging dry after pelletize, dry-pressing formed rear binder removal; (3) burn till at 1100 ~ 1180 DEG C of temperature, be incubated insulation 20min after follow-up temperature of continuing rising is burnt till at 1300 ~ 1350 DEG C of temperature; (4) nickel plating after plane polishing, ageing is carried out, then by surface electrode after ageing; Critesistor is prepared through cylindrical grinding Wen Xunhou.
The preparation method of a kind of PTCR critesistor of the present invention, it is characterised in that the molding specification in described step (2) is 5.5mm �� 2mm.
The preparation method of a kind of PTCR critesistor of the present invention, it is characterised in that the binder removal time in described step (2) is 2h.
The preparation method of a kind of PTCR critesistor of the present invention, it is characterised in that the programming rate in described step (3) is 100 ~ 150 DEG C/10min.
The preparation method of a kind of PTCR critesistor of the present invention, it is characterised in that described in described step (4), the temperature of ageing is 300 DEG C, the time is 2h.
The preparation method of PTCR critesistor of the present invention, by the improvement to its technique, adopts Y2O3Doping barium phthalate base formula, technology stability is good, be suitable for produce miniaturization PTCR thermal resistor so that prepared thermal resistor is quick on the draw, and resistance to current intensity is big, resistance stability good, simple to operate can large-scale promotion use.
Detailed description of the invention
The preparation method of a kind of PTCR critesistor, comprises the steps: that (1) is by Ba(1-x-y-z)SrxPbyCazTiO3+aY2O3+bG+cMn(NO3)2+dLi2CO3Mix by proportioning, wherein: x=2% ~ 11%; Y=0.5% ~ 4%; Z=0.5% ~ 5%; A=0.2% ~ 0.3%; B=1% ~ 2%; C=0.04% ~ 0.08%; D=0.01% ~ 0.08%; G is AST glassy phase, makes and gets the raw materials ready; (2) will get the raw materials ready agitation grinding after mix homogeneously, discharging dry after pelletize, dry-pressing formed rear binder removal; (3) burn till at 1100 ~ 1180 DEG C of temperature, be incubated insulation 20min after follow-up temperature of continuing rising is burnt till at 1300 ~ 1350 DEG C of temperature; (4) nickel plating after plane polishing, ageing is carried out, then by surface electrode after ageing; Critesistor is prepared through cylindrical grinding Wen Xunhou.
The preparation method of a kind of PTCR critesistor of the present invention, the molding specification in described step (2) is 5.5mm �� 2mm. The binder removal time in described step (2) is 2h. Programming rate in described step (3) is 100 ~ 150 DEG C/10min. Starting to heat up at a slow speed from room temperature, the first insulation point preset is 1100 ~ 1180 DEG C, mainly allows the moisture in blank and binding agent volatilization less than 600 DEG C, and this can not carry out too fast from interior volatilization outward, otherwise can cause the pore that blank appearance is bigger. Being incubated when arriving the first insulation point, make the impurity of low melting point fully volatilize, each warm area blank temperature is reached an agreement. Second insulation point is located at 1300 ~ 1350 DEG C, to be rapidly heated when the first insulation point is warmed up to the second insulation point, and programming rate is 100 ~ 150 DEG C/10min. It is demonstrated experimentally that due to BaTiO3Pottery starts in the temperature range (1240 ~ 1260 DEG C) grown up at crystal grain, it is easy to produces secondary crystallization, makes the performance of ceramics be substantially reduced. When being incubated at 1300 ~ 1350 DEG C, play the barium ions in the ion exchange principal crystalline phase in the oxide of semiconducting effect or titanium ion, thus completing semiconducting. In temperature-fall period, the speed of cooling down is very big on room temperature resistivity impact, and cooling rate is more fast, and room temperature resistivity is more low. Therefore, the room temperature resistance of ceramics is adjusted by adjusting cooling rate. Because when 1150 DEG C, crystal grain is substantially frozen in overall structure with crystal boundary, so cooling to after 1150 DEG C, the performance of PTCR sheet is basicly stable. Described in described step (4), the temperature of ageing is 300 DEG C, and the time is 2h.
Claims (5)
1. the preparation method of a PTCR critesistor, it is characterised in that comprise the steps: that (1) is by Ba(1-x-y-z)SrxPbyCazTiO3+aY2O3+bG+cMn(NO3)2+dLi2CO3Mix by proportioning, wherein: x=2% ~ 11%; Y=0.5% ~ 4%; Z=0.5% ~ 5%; A=0.2% ~ 0.3%; B=1% ~ 2%; C=0.04% ~ 0.08%; D=0.01% ~ 0.08%; G is AST glassy phase, makes and gets the raw materials ready; (2) will get the raw materials ready agitation grinding after mix homogeneously, discharging dry after pelletize, dry-pressing formed rear binder removal; (3) burn till at 1100 ~ 1180 DEG C of temperature, be incubated insulation 20min after follow-up temperature of continuing rising is burnt till at 1300 ~ 1350 DEG C of temperature; (4) nickel plating after plane polishing, ageing is carried out, then by surface electrode after ageing; Critesistor is prepared through cylindrical grinding Wen Xunhou.
2. the preparation method of a kind of PTCR critesistor as claimed in claim 1, it is characterised in that the molding specification in described step (2) is 5.5mm �� 2mm.
3. the preparation method of a kind of PTCR critesistor as claimed in claim 1, it is characterised in that the binder removal time in described step (2) is 2h.
4. the preparation method of a kind of PTCR critesistor as claimed in claim 1, it is characterised in that the programming rate in described step (3) is 100 ~ 150 DEG C/10min.
5. the preparation method of a kind of PTCR critesistor as claimed in claim 1, it is characterised in that described in described step (4), the temperature of ageing is 300 DEG C, and the time is 2h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410603095.6A CN105632663A (en) | 2014-10-31 | 2014-10-31 | Preparation method of PTCR |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410603095.6A CN105632663A (en) | 2014-10-31 | 2014-10-31 | Preparation method of PTCR |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105632663A true CN105632663A (en) | 2016-06-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410603095.6A Pending CN105632663A (en) | 2014-10-31 | 2014-10-31 | Preparation method of PTCR |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105632663A (en) |
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2014
- 2014-10-31 CN CN201410603095.6A patent/CN105632663A/en active Pending
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Application publication date: 20160601 |
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| WD01 | Invention patent application deemed withdrawn after publication |