CN105624820B - Polystyrene/derivatives of porphyrin composite nano fiber and its preparation method and application - Google Patents
Polystyrene/derivatives of porphyrin composite nano fiber and its preparation method and application Download PDFInfo
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- 239000002121 nanofiber Substances 0.000 title claims abstract description 48
- 150000004032 porphyrins Chemical class 0.000 title claims abstract description 35
- 239000004793 Polystyrene Substances 0.000 title claims abstract description 33
- 229920002223 polystyrene Polymers 0.000 title claims abstract description 32
- 239000002131 composite material Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000002994 raw material Substances 0.000 claims abstract description 4
- 125000003118 aryl group Chemical group 0.000 claims abstract description 3
- 125000000524 functional group Chemical group 0.000 claims abstract description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 3
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Substances C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims abstract description 3
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims abstract description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000009987 spinning Methods 0.000 claims description 2
- 230000003068 static effect Effects 0.000 claims description 2
- 229940126062 Compound A Drugs 0.000 claims 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 claims 1
- 150000004033 porphyrin derivatives Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 11
- 238000003860 storage Methods 0.000 abstract description 10
- 239000010410 layer Substances 0.000 abstract description 8
- 238000010041 electrostatic spinning Methods 0.000 abstract description 4
- 230000006870 function Effects 0.000 abstract description 2
- 239000011229 interlayer Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 10
- 238000012546 transfer Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000001523 electrospinning Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 229920006389 polyphenyl polymer Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- NCAJWYASAWUEBY-UHFFFAOYSA-N 3-[20-(2-carboxyethyl)-9,14-diethyl-5,10,15,19-tetramethyl-21,22,23,24-tetraazapentacyclo[16.2.1.1^{3,6}.1^{8,11}.1^{13,16}]tetracosa-1(21),2,4,6(24),7,9,11,13,15,17,19-undecaen-4-yl]propanoic acid Chemical class N1C2=C(C)C(CC)=C1C=C(N1)C(C)=C(CC)C1=CC(C(C)=C1CCC(O)=O)=NC1=CC(C(CCC(O)=O)=C1C)=NC1=C2 NCAJWYASAWUEBY-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241001597008 Nomeidae Species 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 239000012621 metal-organic framework Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000006250 one-dimensional material Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- RKCAIXNGYQCCAL-UHFFFAOYSA-N porphin Chemical compound N1C(C=C2N=C(C=C3NC(=C4)C=C3)C=C2)=CC=C1C=C1C=CC4=N1 RKCAIXNGYQCCAL-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000005287 template synthesis Methods 0.000 description 1
Classifications
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F6/00—Monocomponent artificial filaments or the like of synthetic polymers; Manufacture thereof
- D01F6/44—Monocomponent artificial filaments or the like of synthetic polymers; Manufacture thereof from mixtures of polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds as major constituent with other polymers or low-molecular-weight compounds
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F1/00—General methods for the manufacture of artificial filaments or the like
- D01F1/02—Addition of substances to the spinning solution or to the melt
- D01F1/10—Other agents for modifying properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Textile Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
- Artificial Filaments (AREA)
Abstract
The present invention provides a kind of polystyrene/derivatives of porphyrin composite nano fiber and its preparation method and application, raw material includes polystyrene and derivatives of porphyrin, and the structural formula of the derivatives of porphyrin is:Wherein, R1For one kind of pyridine radicals or phenyl, R2For one kind in unsaturated bond or aromatic functional group, R1、R2It is identical or different.The composite nano fiber is made by method of electrostatic spinning, is applied to transistorized memory as charge storage layer.The electric charge capture layer that the composite nano fiber makees transistorized memory has higher specific surface area, can improve the memory window of memory, and is conducive to carrier and is transmitted in the effective of each function interlayer of device.
Description
Technical field
The invention belongs to fiber device arts, and in particular to a kind of polystyrene/derivatives of porphyrin composite Nano is fine
Dimension and its preparation method and application.
Background technology
Nanofiber refers to a diameter of Nano grade and the one-dimensional material with certain draw ratio, it, which not only has, usually receives
Skin effect, small-size effect etc. possessed by rice material, also with excellent mechanical property, electronics and photon transmission characteristic and
Photoconductive property etc., makes it show important application value in photoelectric device and sensor etc..The preparation being currently known
The method of nanofiber has pulling method, template synthesis method, phase separation method, self-assembly method etc., if but consider process controllability,
The requirement such as equipment complexity, the scope of application, cost, yield and fibre dimensions controllability, above method have respective limitation.It is quiet
Electrospinning with its it is easy to operate, applied widely, production efficiency is high the advantages that and more researcher favor.
Meanwhile existing transistorized memory usually selects zero dimension material, as metal nanoparticle, polyfluorene nano particle,
Fullerene etc., or two-dimensional material, such as graphene and its redox products, molybdenum disulfide, as carrier storage material, but
These materials are integrated into transistorized memory there are many defects, as preparation process it is complicated, it is of high cost, equipment and environment are wanted
Seek harshness etc..
The content of the invention
The technical problem of solution:A kind of polystyrene/porphin is provided the purpose of the present invention is overcome the deficiencies in the prior art
Quinoline derivant composite nano fiber and its preparation method and application, the composite fibre make the electric charge capture layer energy of transistorized memory
Enough improve the memory window of memory.
Technical solution:
Polystyrene/derivatives of porphyrin composite nano fiber, raw material include polystyrene and derivatives of porphyrin, the porphyrin
The structural formula of derivative is:
Wherein, R1For one kind of pyridine radicals or phenyl, R2For one kind in unsaturated bond or aromatic functional group, R1、R2It is identical
It is or different.
Further, a diameter of 50~800nm of the polystyrene/derivatives of porphyrin composite nano fiber.
Further, the weight ratio of polystyrene and derivatives of porphyrin is 100:0.5~5.
The preparation method of the polystyrene/derivatives of porphyrin composite nano fiber, is that derivatives of porphyrin first is dissolved in N,
Dinethylformamide, adds polystyrene, and heating stirring to polystyrene is completely dissolved, finally by resulting solution Static Spinning
The obtained composite nano fiber of silk.
Further, the reception device of electrostatic spinning is two parallel metal bars, and metal distance between tie rods is 0.1~5cm.
The polystyrene/application of the derivatives of porphyrin composite nano fiber in transistorized memory, being will be described multiple
Close the electronics trapping layer that transistorized memory is made in nanofiber.
The present invention uses reception device of two parallel metal bars with same negative high voltage as electrostatic spinning, is determined
To polystyrene/derivatives of porphyrin composite nano fiber, i.e., arrangement with certain orientation composite nano fiber.Relative to
Conventional receiver mode obtains nanofiber, and nanofiber of the invention is transferred to SiO2Method on/Si substrates is simpler fast
Victory, integrates easy to ensuing memory.In addition, the nanofiber of orientation with the nanofiber being distributed in a jumble compared with lower
Roughness, and arrangement and the channel vertical of nanofiber is not in the parallel situation for isolating raceway groove, in orientated nano fibers
The pentacene of surface growth is more smooth, and then transistor field-effect also can be better.On this basis, nanofiber does charge-trapping
Layer, has the specific surface area of higher, more highdensity storage site can be formed in identical raceway groove, so as to be stored beneficial to improving
Window, meanwhile, nanofiber surface can form the built in field of higher and be transmitted beneficial to the effective of carrier.
Beneficial effect:
1. polystyrene/derivatives of porphyrin composite nano fiber is thinner than spin coating as the electronics trapping layer of transistorized memory
Film has the specific surface area of higher, and the storage density of higher can be reached in same raceway groove, and then improves the memory window of memory
Mouthful;
2. under same grid voltage, polystyrene/derivatives of porphyrin composite nano fiber surface energy forms the built-in electricity of higher
, transmitted beneficial to carrier in the effective of each function interlayer of device;
3. the doping concentration of derivatives of porphyrin is the 1% of PS weight, gained transistorized memory can reach the storage of 33V
Window, and device has higher reliability.
Brief description of the drawings
Fig. 1 is the electrostatic spinning technique that embodiment 1 uses and the schematic diagram of nanofiber transfer;
Fig. 2 is the scanning electron microscope diagram of polystyrene/derivatives of porphyrin composite nano fiber prepared by embodiment 1;
Fig. 3 is the device architecture schematic diagram of transistorized memory prepared by embodiment 1;
Fig. 4 is the transfer curve of transistorized memory prepared by embodiment 1;
Fig. 5 is the curve of output of transistorized memory prepared by embodiment 1;
Fig. 6 is the drift of the transfer curve of transistorized memory prepared by embodiment 1;
Fig. 7 is the curve of holding time of transistorized memory prepared by embodiment 1;
Fig. 8 is the drift of the transfer curve of transistorized memory prepared by embodiment 2;
Embodiment
Following embodiments further illustrate present disclosure, but should not be construed as limiting the invention.Without departing substantially from
In the case of spirit and essence of the invention, the modification and replacement made to the method for the present invention, step or condition, belong to the present invention
Scope.Unless otherwise specified, the conventional means that technological means used in embodiment is well known to those skilled in the art.
The synthesis of mesoporphyrin derivative of the present invention is with reference to Light-Harvesting and Ultrafast Energy
Migration in Porphyrin-Based Metal-Organic Frameworks, Journal of the American
Chemical Society, 2013,135 (2), pp 862-869.
Embodiment 1
Weigh a certain amount of derivatives of porphyrin to be dissolved in n,N-Dimethylformamide, ultrasound, adds polystyrene, make polyphenyl
Ethylene concentration is 100mg/mL, derivatives of porphyrin:Polystyrene is 1wt%, heats and is stirred until poly- on 50 DEG C of warm tables
Compound is completely dissolved, untill solution is in homogeneous, transparence.By the above-mentioned solution configured injection 2mL standard syringe in into
Row electrospinning, as shown in Figure 1, front end of the syringe needle connecting external diameter be the stainless steel syringe needle of 0.6mm as nozzle, and connect 15KV just
High pressure, parallel metal bar of the spacing for 2cm is placed as reception device in nozzle underface, and connects the negative high voltage of -500V, nozzle
With reception device at a distance of 15cm, syringe pump fltting speed is set to carry out electrospinning for 0.001mm/s, the polystyrene oriented/
Derivatives of porphyrin composite nano fiber.
Fig. 2 is the scanning electron microscope diagram piece of polystyrene/derivatives of porphyrin composite nano fiber, can from figure
It is smooth to composite nano fiber pattern, average, a diameter of 390nm.
By SiO2/ Si pieces cut into the substrate of 1.5 × 1.5cm, 10 minutes ultrasonic respectively with acetone, ethanol, ultra-pure water, then
Dried up with high pressure nitrogen, then prevent from being completely dried it in 20 minutes in 120 DEG C of baking ovens.The substrate of wash clean is lain against multiple
Close under nanofiber, and ensure that composite nano fiber is vertical with substrate side, slowly lift substrate and successfully shift nanofiber.
The substrate for carrying nanofiber is transferred in glove box, flow perturbation cannot be subject to halfway, otherwise the arrangement of nanofiber
It can be destroyed.Substrate is lain against on the warm table in glove box, 200 DEG C annealing 1 it is small when nanofiber soften and strengthen and
The contact of substrate.Next it is less than 0.03nm/s in the pentacene of nanofiber surface evaporation 50nm thickness, evaporation rate.Finally,
Mask plate is installed on pentacene surface, and ensures that the raceway groove on mask plate is vertical with nanofiber, copper steam-plating source-drain electrode, obtains
It is crystal using the polystyrene of orientation/derivatives of porphyrin composite nano fiber as the transistorized memory of charge storage layer, Fig. 3
The device architecture schematic diagram of pipe memory.
The performance of test gained transistorized memory, by SiO2One jiao of/Si pieces is scratched, and only retains grid Si, will be partly
Three probes of conductor Parameters Instrument connect source-drain electrode and grid respectively, test its transfer and curve of output, transfer curve respectively
Drift and reliability.
Fig. 4 is the transfer curve of transistorized memory,
Fig. 5 is the curve of output of transistorized memory, and as can be seen from the figure gained transistorized memory has reliable
Field-effect.
Fig. 6 is the drift of transistorized memory transfer curve, and as can be seen from the figure the memory window of transistor is reachable
33V, has stronger storage capacity.
Fig. 7 is the curve of holding time of transistorized memory, as can be seen from the figure transistorized memory ON state and OFF state
Electric current do not occur substantially to decay after the test of 10000s, on-off ratio still has 5.2 × 104, which has preferable
Stability.
Embodiment 2
Weigh a certain amount of derivatives of porphyrin to be dissolved in n,N-Dimethylformamide, ultrasound, adds polystyrene, make polyphenyl
Ethylene concentration is 100mg/mL, derivatives of porphyrin:Polystyrene is 0.5wt%, heated on 50 DEG C of warm tables and stir until
Polymer is completely dissolved, untill solution is in homogeneous, transparence.By in the standard syringe of the above-mentioned solution configured injection 2mL
Carry out electrospinning, as shown in Figure 1, front end of the syringe needle connecting external diameter be the stainless steel syringe needle of 0.6mm as nozzle, and connect 15KV's
Positive high voltage, parallel metal bar of the spacing for 2cm is placed as reception device in nozzle underface, and connects the negative high voltage of -500V, sprays
Head, at a distance of 15cm, sets syringe pump fltting speed to carry out electrospinning, the polyphenyl second oriented for 0.001mm/s with reception device
Alkene/derivatives of porphyrin composite nano fiber, gained composite nano fiber pattern is smooth, average, a diameter of 380nm.
By SiO2/ Si pieces are cut into the substrate of 1.5 × 1.5cm, 10 minutes ultrasonic respectively with acetone, ethanol, ultra-pure water, then
Dried up with high pressure nitrogen, then being placed 20 minutes in 120 DEG C of baking ovens is completely dried it.Nanofiber is transferred to wash clean
Substrate on, then with glove box 200 DEG C of warm tables annealing 1 it is small when, then its show be deposited pentacene and copper source and drain electricity
Pole, and ensure that the raceway groove on mask plate is vertical with nanofiber, obtain with the polystyrene of orientation/derivatives of porphyrin composite Nano
Transistorized memory of the fiber as charge storage layer.Three probes of semiconductor parameter instrument are connected into source-drain electrode and grid respectively
Pole, the storage performance of test transistor memory.
Fig. 8 is the drift of transistorized memory transfer curve, and as can be seen from the figure the memory window of transistor is 16V,
Less than the window that embodiment 1 prepares transistorized memory, this explanation does not reach as the derivatives of porphyrin in storage site in doping
To before critical value, its content is proportional to the storage capacity of device.
Claims (3)
- A kind of 1. transistorized memory, it is characterised in that:The electronics trapping layer of the transistorized memory is by polystyrene/porphyrin Derivative composite nano fiber is made;The polystyrene/derivatives of porphyrin composite nano fiber is to use polystyrene and derivatives of porphyrin as raw material Static Spinning Silk is made, and the structural formula of the derivatives of porphyrin is:,Wherein, R1For one kind of pyridine radicals or phenyl, R2For one kind in unsaturated bond or aromatic functional group, R1、R2It is identical or not Together.
- 2. transistorized memory according to claim 1, it is characterised in that:Polystyrene/the derivatives of porphyrin is compound A diameter of 50~800nm of nanofiber.
- 3. transistorized memory according to claim 1, it is characterised in that:Polystyrene/the derivatives of porphyrin is compound The raw material polystyrene of nanofiber and the weight ratio of derivatives of porphyrin are 100:0.5~5.
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CN106442497A (en) * | 2016-09-21 | 2017-02-22 | 天津工业大学 | Preparation method of porphyrin/nano porous fiber membrane hydrogen chloride gas sensor |
CN106684244B (en) * | 2016-11-03 | 2019-07-09 | 南京邮电大学 | A kind of floating gate type flexibility low-voltage organic field effect tube memory |
CN108796825B (en) * | 2018-06-22 | 2019-08-27 | 南京邮电大学 | Detect the porous nano-fibre film and the preparation method and application thereof of wet environment explosive vapors |
CN111548683B (en) * | 2020-05-13 | 2021-09-28 | 南京邮电大学 | Polystyrene-porphyrin derivative nano vertical array film and preparation method and application thereof |
CN113802208B (en) * | 2021-10-09 | 2022-09-13 | 吉林大学 | Multifunctional transparent nanofiber screen window and preparation method thereof |
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