CN105609905A - Single notch filter and electronic equipment - Google Patents
Single notch filter and electronic equipment Download PDFInfo
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- CN105609905A CN105609905A CN201511025136.9A CN201511025136A CN105609905A CN 105609905 A CN105609905 A CN 105609905A CN 201511025136 A CN201511025136 A CN 201511025136A CN 105609905 A CN105609905 A CN 105609905A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/2002—Dielectric waveguide filters
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Abstract
The invention provides a single notch filter, which comprises a dielectric layer, a first metal layer and a second metal layer, wherein the first metal layer and the second metal layer are arranged on two opposite surfaces of the dielectric layer; the first metal layer comprises metal microstrip patches; the second metal layer comprises a coplanar waveguide plate and a metal ground plate; and a fractal defected ground body of the coplanar waveguide plate is coupled to the metal microstrip patches on the basis of the dielectric layer. The fractal defected ground body is arranged in the second metal layer, and is coupled to the metal microstrip patches of the first metal layer on the basis of the dielectric layer. The filter is implemented by means of a microstrip and a defected ground; spatial characteristic is converted into electromagnetic characteristic on the basis of the space fallibility of a fractal structure; and notching of the filter is also achieved without a multi-filter cascading mode. The fractal defected ground structure is much smaller than a plurality of cascade filters in volume, so that the volume of the filter is reduced; the problem of mismatch between components is solved; and the efficiency of a system is improved.
Description
Technical field
The present invention relates to electronic device field, in particular, relate to a kind of single notch filter and electricitySubset.
Background technology
Along with developing rapidly of the communication technology, people are more and more higher to the requirement of the information transmission system. At thisUnder background, UWB (UltraWideband, ultra broadband) technology is simple with its system, cost is low, meritConsuming the advantage such as little, data transmission bauds is fast, security is high becomes a study hotspot of the current communications field.
Due to ultra-wideband communications occupied frequency band too wide (3.1GHz is to 10.6GHz), in this frequency rangeFor example, through there is the communication of some routines: as the C-band for satellite communication and X-band, WLAN(WirelessLocalAreaNetworks, WLAN) and WiMAX (WorldwideInteroperabilityforMicrowaveAccess, worldwide interoperability for microwave access, or claim broadband intercommunication microwaveAccess). How solving co-channel interference becomes UWB research important content, and filters with the ultra broadband of trapRipple device becomes design key. But the traditional design method of this UWB wave filter trap is multiple filtersThe cascade of ripple device, this wave filter has increased system bulk and design cost, easily causes the mistake between parts simultaneouslyJoin, reduce the efficiency of system.
Summary of the invention
In view of this, the invention provides a kind of single notch filter, solved multiple filters in prior artThe UWB wave filter trap structure of ripple device cascade composition, causes filter system volume and design costGreatly, and easily cause the mismatch between parts, reduce the problem of the efficiency of system.
For achieving the above object, the invention provides following technical scheme:
A kind of single notch filter, comprising:
Dielectric layer;
Be arranged at the first metal layer of described dielectric layer first surface;
Be arranged at the second metal level of second of described dielectric layer, described first surface with described second relative;
Wherein, described the first metal layer comprises metal micro-strip paster, and described the second metal level comprises coplanar rippleGuide plate and metal ground plate, described co-planar waveguide plate comprises fractal defect terrain; Based on described dielectric layer,Described fractal defect terrain and described metal micro-strip paster are coupled.
Above-mentioned single notch filter, preferred, described metal micro-strip paster comprises about described the first gold medalBelong to symmetrically arranged the first paster of center line and second paster of layer;
Described first component one end connects the first edge of described the first metal layer, described first component anotherEnd is connected with described second component one end, and the other end of described second component is about in described the first metal layerThe second component symmetry of heart line and the second paster; One section of the first component of described the second paster and described secondThe second component of paster is connected, and the other end connects the second edge of described the first metal layer, described first sideEdge and described the second edge are about the center line symmetry of described the first metal layer.
Above-mentioned single notch filter, preferred, described co-planar waveguide plate adopts Stepped Impedance resonator.
Above-mentioned single notch filter, preferred, described metal ground plate is around described co-planar waveguide plate,And described metal ground plate is not connected with described co-planar waveguide plate.
Above-mentioned single notch filter, preferred, described fractal defect terrain is arranged at described co-planar waveguideBan center.
Above-mentioned single notch filter, preferred, described co-planar waveguide plate adopts rectangular-shaped structure, described inCo-planar waveguide plate comprises according to long limit and being arranged in order and connected Part I, Part II and Part III,Wherein, Part I is identical with Part III, and the length of the broadside of described Part I is less than described secondThe length of the broadside of part.
Above-mentioned single notch filter, preferred, the Part I of described co-planar waveguide plate about give an account ofThe projection of matter layer, overlaps with the second component of the first paster in described metal micro-strip paster; Described coplanar rippleThe Part III of guide plate is about the projection of described dielectric layer, with the second paster in described metal micro-strip pasterSecond component overlaps.
Above-mentioned single notch filter, preferred, described fractal defect terrain adopts Y type fractal structure.
Above-mentioned single notch filter, preferred, described Y type fractal structure adopts the fractal mould of X-Y schemeIt is fractal that type carries out N rank, and wherein, described N value is to be greater than 1 positive integer.
Above-mentioned single notch filter, preferred, the relative dielectric constant interval of described dielectric layer is1-100, Thickness interval is 0.05-5mm.
A kind of electronic equipment, comprises single notch filter;
Wherein, described single notch filter, comprising:
Dielectric layer;
Be arranged at the first metal layer of described dielectric layer first surface;
Be arranged at the second metal level of second of described dielectric layer, described first surface with described second relative;
Wherein, described the first metal layer comprises metal micro-strip paster, and described the second metal level comprises coplanar rippleGuide plate and metal ground plate, described co-planar waveguide plate comprises fractal defect terrain; Based on described dielectric layer,Described fractal defect terrain and described metal micro-strip paster are coupled.
Known via above-mentioned technical scheme, compared with prior art, the invention provides a kind of single trapWave filter, comprising: dielectric layer; Be arranged at the first metal layer of described dielectric layer first surface; Be arranged at instituteState the second metal level of second of dielectric layer, described first surface with described second relative; Wherein, described inThe first metal layer comprises metal micro-strip paster, and described the second metal level comprises co-planar waveguide plate and metal ground connectionPlate, described co-planar waveguide plate comprises fractal defect terrain; Based on described dielectric layer, described fractal defect groundBody and described metal micro-strip paster are coupled. In the single notch filter of one provided by the invention, due toDielectric layer both sides are respectively arranged with the first metal layer and the second metal level, and are provided with in this second metal levelComprise fractal defect terrain, and this fractal defect terrain and the first metal layer metal micro-strip paster are based on this JieThe coupling of matter layer, realizes because wave filter adopts micro-band and defect ground form, and the space based on fractal structure is filled outFilling property, is converted to electromagnetic property by spatial character, needn't adopt the mode of the cascade of multiple wave filters, alsoRealize wave filter trap, and because fractal defect geotexture is much smaller than the body of multiple cascading filtersAmass, reduced the volume of wave filter, solved the mismatch problems between parts, improved the efficiency of system.
Brief description of the drawings
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, below will be to realityThe accompanying drawing of executing required use in example or description of the Prior Art is briefly described, apparently, belowAccompanying drawing in description is only embodiments of the invention, for those of ordinary skill in the art, notPay under the prerequisite of creative work, other accompanying drawing can also be provided according to the accompanying drawing providing.
Fig. 1 is a structural representation of a kind of single notch filter embodiment provided by the invention;
Fig. 2 is the concrete structure of the first metal layer in a kind of single notch filter embodiment provided by the inventionSchematic diagram;
Fig. 3 is the concrete structure of the second metal level in a kind of single notch filter embodiment provided by the inventionSchematic diagram;
Fig. 4 is the concrete structure of co-planar waveguide plate in a kind of single notch filter embodiment provided by the inventionSchematic diagram;
Fig. 5 (a) be in a kind of single notch filter embodiment provided by the invention fractal defect terrain oneRank somatotype defect sturcture schematic diagram;
Fig. 5 (b) be in a kind of single notch filter embodiment provided by the invention fractal defect terrain twoRank somatotype defect sturcture schematic diagram;
Fig. 5 (c) changes for fractal defect terrain in a kind of single notch filter embodiment provided by the inventionEnter rear second order somatotype defect sturcture schematic diagram;
Fig. 6 is that after having improvement in the single notch filter embodiment of one provided by the invention, second order somatotype lacksFall into the concrete structure schematic diagram of the second metal level of structure;
Fig. 7 is another structural representation of a kind of single notch filter embodiment provided by the invention;
Fig. 8 is the structural representation of a kind of electronic equipment embodiment provided by the invention.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried outDescribe clearly and completely, obviously, described embodiment is only the present invention's part embodiment, andNot whole embodiment. Based on the embodiment in the present invention, those of ordinary skill in the art are not doingGo out the every other embodiment obtaining under creative work prerequisite, all belong to the scope of protection of the invention.
Referring to accompanying drawing 1, is a structural representation of a kind of single notch filter embodiment provided by the inventionFigure, this list notch filter comprises: dielectric layer 100, the first metal layer 200 and the second metal level 300;
Wherein, this first metal layer 200 is arranged at the first surface of described dielectric layer 100; The second metal level300 are arranged at second of described dielectric layer 100, described first surface with described second relative;
Wherein, described the first metal layer 200 comprises metal micro-strip paster 210, described the second metal level 300Comprise co-planar waveguide plate 310 and metal ground plate 320, described co-planar waveguide plate 310 comprises fractal defect groundBody 330; Based on described dielectric layer 100, described fractal defect terrain 330 and described metal micro-strip paster 210Be coupled.
In concrete enforcement, the relative dielectric constant interval of this dielectric layer 100 is 1-100, ThicknessInterval is 0.05-5mm.
It should be noted that, in this somatotype defect terrain, include somatotype defect sturcture, lack based on this somatotypeThe space-filling that falls into structure, is converted to electromagnetic property by spatial character, realizes trap processing, and logicalOverregulate the size in this space, realize trap centre frequency is moved to low frequency direction.
Wherein: εrFor the dielectric constant of dielectric-slab, λ0For the center frequency point of the passband of wave filter correspondingWavelength, λgFor being ε at dielectric constantrThe corresponding phase of center frequency point of passband of dielectric-slab median filterTo wavelength, f0For the center frequency point of the passband of wave filter, c is 3*10^8m/s, L1For co-planar waveguide plateIn 311 and 313 two-part length, L2For 312 length in co-planar waveguide plate.
Concrete, due to this fractal defect terrain 330 with described metal micro-strip paster 210 based on this mediumLayer 100 is realized and being coupled, and the size of dielectric constant that can be by changing this dielectric-slab is adjusted wave filterThe size of passband and the position of center frequency point.
As shown in Figure 2 be the concrete structure schematic diagram of the first metal layer, wherein, this metal micro-strip paster210 comprise symmetrically arranged the first paster of center line and the second paster about described the first metal layer;
Described the first paster comprises first component 211 and second component 212, and described first component one end connectsThe first edge of described the first metal layer 200, described first component 211 other ends and described second component212 one end are connected, and the other end of described second component is about described the first metal layer center line and the second pasterSecond component 213 symmetries; First component 214 one end of described the second paster and described the second pasterSecond component 213 is connected, and the other end connects the second edge of described the first metal layer, described the first edgeWith the center line symmetry of described the second edge about described the first metal layer.
In Fig. 2, dot the central shaft of this metal micro-strip paster, and this central shaft and the first metal layerCenter line overlap.
Concrete, axially symmetric structure centered by this metal micro-strip paster 210.
Wherein, this first component and second component are respectively rectangular configuration.
Preferably, this first component adopts microstrip line construction, and its width is less than this second component.
As shown in Figure 3 be the concrete structure schematic diagram of the second metal level 300, wherein, this metal ground connectionPlate 320 is around described co-planar waveguide plate 310, and described metal ground plate 320 and described co-planar waveguide plate310 do not connect.
Concrete, described fractal defect terrain 330 is arranged at described co-planar waveguide Ban310 center.
Wherein, this co-planar waveguide plate 310 is rectangular-shaped structure, and this metal ground plate 320 is rectangle frame,Its inner engraved structure 321 these co-planar waveguide plates 310 of carrying, and these metal ground plate 320 inner sides are common with thisGround roll guide plate 310 does not connect, and this metal ground plate 320 and co-planar waveguide plate 310 are by being arranged on mediumIn layer 100 the same face, set up the space structure between the two.
Concrete, owing to changing the size of this metal ground plate 320, also can change this list notch filterSpace structure in device,, changes peripheral length and width and the inner engraved structure 321 of this metal ground plate 320Length and width, can realize and change space structure in single notch filter, realize that to change the passband of wave filter wideDegree and center frequency point.
Wherein, this co-planar waveguide plate adopts Stepped Impedance resonator.
As shown in Figure 4 be the concrete structure schematic diagram of co-planar waveguide plate 310, wherein, this co-planar waveguidePlate 310 adopts rectangular-shaped structure, and described co-planar waveguide plate 310 comprises according to long limit and is arranged in order and is connectedPart I 311, Part II 312 and Part III 313, wherein, Part I 311 and the 3rdPart 313 is identical, and the length of the broadside of described Part I 311 is less than the wide of described Part II 312The length on limit.
In Fig. 4, dot the central shaft of this co-planar waveguide plate 310, and this central shaft and Part I311, the center line of Part II 312 and Part III 313 overlaps.
Wherein, the Part I 311 of this co-planar waveguide plate 310 and Part III 313 and this metal micro-stripThe second component 212/214 of paster 210 is measure-alike.
Wherein, the distance between two of this metal micro-strip paster 210 first component 211/213 edges and thisThe length of the Part II 312 of co-planar waveguide plate 310 is identical.
It should be noted that, owing to changing the size of co-planar waveguide plate 310, also can change this list trapSpace structure in wave filter,, changes Part I/Part III and in this co-planar waveguide plate 310The length and width value of two parts, can realize and change space structure in single notch filter, realizes and changes wave filterPassband width and center frequency point.
Wherein, because this Part I is identical with Part III, change this co-planar waveguide plate 310 sizesTime, need the size synchronous change to Part I and Part III simultaneously.
Wherein, this fractal defect terrain adopts Y type fractal structure.
Concrete, it is fractal that this Y type fractal structure employing X-Y scheme fractal model carries out N rank, wherein,Described N value is to be greater than 1 positive integer.
Is the single order somatotype defect sturcture schematic diagram of fractal defect terrain 330 as shown in Fig. 5 (a), shouldIn structure, there is the y-type structure of three part compositions, by the length in this y-type structure (L) and wideDegree (W) changes, and can realize and change space structure in this list notch filter.
Is the second order somatotype defect sturcture schematic diagram of fractal defect terrain 330 as shown in Fig. 5 (b), shouldIn structure, there are three y-type structures and combine the second order y-type structure obtaining, by this y-type structureLength (L) and width (W) change, and can realize and change space structure in this list notch filter.
Is second order somatotype defect sturcture signal after the improvement of fractal defect terrain 330 as shown in Fig. 5 (c)Figure, has y-type structure in this structure, changes by the microstrip line length (l) in this y-type structureBecome, can realize and change space structure in this list notch filter.
Wherein, after this improvement, in second order somatotype defect sturcture, L fixes, i.e. the center of fixed filters passbandFrequency, only, by the size of microstrip line length l in the fractal defect ground structure of adjustable Y-shaped, can realize trapThe adjusting of centre frequency from 4.94GHz to 7.20GHz, expands trap frequency excursion.
Concrete, when the size of this l changes from 0 to 1.8mm, trap centre frequency from 4.94GHz to7.20GHz adjusting. L value is approximately large, ultra-wide band filter can filtering frequency less.
The concrete structure for having the second metal level that improves rear second order somatotype defect sturcture shown in Fig. 6 showsIntention.
As shown in Figure 7 be another structural representation of single notch filter, this list notch filter comprises:Dielectric layer 100, the first metal layer 200 and the second metal level 300;
This Fig. 7 is the perspective view of overlooking direction, wherein, and the Part I 311 of this co-planar waveguide plate 310About the projection of described dielectric layer 100, with second of the first paster in described metal micro-strip paster 210Part 212 overlaps; The Part III 313 of described co-planar waveguide plate is about the projection of described dielectric layer, with instituteThe second component 214 of stating the second paster in metal micro-strip paster overlaps.
It should be noted that, by above-mentioned projection coincidence system, fractal defect terrain 330 and described goldBelong to microband paste 210 and be coupled, this projection coincidence system, make this fractal defect terrain 330 with described inMetal micro-strip paster 210 is realized coupling in vertical transition mode, and this metal micro-strip paster 210 is by hanging downThe mode of straight transition and metal ground plate 320 and co-planar waveguide plate 310 are coupled.
It should be noted that in the one list notch filter providing in the application, due in dielectric layer both sidesBe respectively arranged with the first metal layer and the second metal level, and in this second metal level, be provided with comprise fractal lackFall into terrain, and this fractal defect terrain and the first metal layer metal micro-strip paster be coupled based on this dielectric layer,Because adopting micro-band and defect ground form, realizes by wave filter, based on the space-filling of fractal structure, by skyBetween characteristic be converted to electromagnetic property, needn't adopt the mode of the cascade of multiple wave filters, also realized filteringDevice trap, and because fractal defect geotexture is much smaller than the volume of multiple cascading filters, reducedThe volume of wave filter, has solved the mismatch problems between parts, has improved the efficiency of system.
In the embodiment that the invention described above provides, describe a kind of single notch filter in detail, the present invention also carriesSupply a kind of electronic equipment with this list notch filter, provided specific embodiment below and carry out in detailExplanation.
Referring to accompanying drawing 8, is the structural representation of a kind of electronic equipment embodiment provided by the invention, this electricitySubset comprises: body 801 and single notch filter 802;
Wherein, this body is used for carrying this list notch filter 802;
Wherein, this list notch filter 802, comprising:
Dielectric layer;
Be arranged at the first metal layer of described dielectric layer first surface;
Be arranged at the second metal level of second of described dielectric layer, described first surface with described second relative;
Wherein, described the first metal layer comprises metal micro-strip paster, and described the second metal level comprises coplanar rippleGuide plate and metal ground plate, described co-planar waveguide plate comprises fractal defect terrain; Based on described dielectric layer,Described fractal defect terrain and described metal micro-strip paster are coupled.
Preferably, described metal micro-strip paster comprises about the center line of described the first metal layer and being symmetrical arrangedThe first paster and the second paster;
Described first component one end connects the first edge of described the first metal layer, described first component anotherEnd is connected with described second component one end, and the other end of described second component is about in described the first metal layerThe second component symmetry of heart line and the second paster; One section of the first component of described the second paster and described secondThe second component of paster is connected, and the other end connects the second edge of described the first metal layer, described first sideEdge and described the second edge are about the center line symmetry of described the first metal layer.
Preferably, described co-planar waveguide plate adopts Stepped Impedance resonator.
Preferably, described metal ground plate is around described co-planar waveguide plate, and described metal ground plate and instituteStating co-planar waveguide plate does not connect.
Preferably, described fractal defect terrain is arranged at described co-planar waveguide Ban center.
Preferably, described co-planar waveguide plate adopts rectangular-shaped structure, and described co-planar waveguide plate comprises according to lengthLimit is arranged in order and connected Part I, Part II and Part III, wherein, and Part I andThree parts are identical, and the length of the broadside of described Part I is less than the length of the broadside of described Part II.
Preferably, the Part I of described co-planar waveguide plate is about the projection of described dielectric layer, with described goldThe second component that belongs to the first paster in microband paste overlaps; The Part III of described co-planar waveguide plate is about instituteState the projection of dielectric layer, overlap with the second component of the second paster in described metal micro-strip paster.
Preferably, described fractal defect terrain adopts Y type fractal structure.
Preferably, it is fractal that described Y type fractal structure employing X-Y scheme fractal model carries out N rank, wherein,Described N value is to be greater than 1 positive integer.
Preferably, the relative dielectric constant interval of described dielectric layer is 1-100, and Thickness interval is0.05-5mm。
In this description, each embodiment adopts the mode of going forward one by one to describe, and each embodiment stressesBe and the difference of other embodiment, between each embodiment identical similar part mutually referring to.For the device providing for embodiment, because its method providing with embodiment is corresponding, so describeFairly simple, relevant part illustrates referring to method part.
To the above-mentioned explanation of provided embodiment, professional and technical personnel in the field can be realized or useThe present invention. To be aobvious and easy for those skilled in the art to the multiple amendment of these embodimentSee, General Principle as defined herein can be in the situation that not departing from the spirit or scope of the present invention,Realize in other embodiments. Therefore, the present invention will can not be restricted to these embodiment shown in this article,But to meet the widest scope consistent with principle provided in this article and features of novelty.
Claims (11)
1. a single notch filter, is characterized in that, comprising:
Dielectric layer;
Be arranged at the first metal layer of described dielectric layer first surface;
Be arranged at the second metal level of second of described dielectric layer, described first surface with described second relative;
Wherein, described the first metal layer comprises metal micro-strip paster, and described the second metal level comprises coplanar rippleGuide plate and metal ground plate, described co-planar waveguide plate comprises fractal defect terrain; Based on described dielectric layer,Described fractal defect terrain and described metal micro-strip paster are coupled.
2. single notch filter according to claim 1, is characterized in that, described metal micro-strip is pastedSheet comprises symmetrically arranged the first paster of center line and the second paster about described the first metal layer;
Described first component one end connects the first edge of described the first metal layer, described first component anotherEnd is connected with described second component one end, and the other end of described second component is about in described the first metal layerThe second component symmetry of heart line and the second paster; One section of the first component of described the second paster and described secondThe second component of paster is connected, and the other end connects the second edge of described the first metal layer, described first sideEdge and described the second edge are about the center line symmetry of described the first metal layer.
3. single notch filter according to claim 1, is characterized in that, described co-planar waveguide plateAdopt Stepped Impedance resonator.
4. single notch filter according to claim 2, is characterized in that, described metal ground plateAround described co-planar waveguide plate, and described metal ground plate is not connected with described co-planar waveguide plate.
5. single notch filter according to claim 4, is characterized in that, described fractal defect groundBody is arranged at described co-planar waveguide Ban center.
6. single notch filter according to claim 4, is characterized in that, described co-planar waveguide plateAdopt rectangular-shaped structure, described co-planar waveguide plate comprise according to long limit be arranged in order and connected Part I,Part II and Part III, wherein, Part I is identical with Part III, described Part I wideThe length on limit is less than the length of the broadside of described Part II.
7. single notch filter according to claim 6, is characterized in that, described co-planar waveguide platePart I about the projection of described dielectric layer, with second of the first paster in described metal micro-strip pasterParts overlap; The Part III of described co-planar waveguide plate is about the projection of described dielectric layer, with described metalIn microband paste, the second component of the second paster overlaps.
8. single notch filter according to claim 4, is characterized in that, described fractal defect groundBody adopts Y type fractal structure.
9. single notch filter according to claim 8, is characterized in that, the fractal knot of described Y typeIt is fractal that structure adopts X-Y scheme fractal model to carry out N rank, wherein, described N value be greater than 1 just wholeNumber.
10. single notch filter according to claim 1, is characterized in that, described dielectric layerRelative dielectric constant interval is 1-100, and Thickness interval is 0.05-5mm.
11. 1 kinds of electronic equipments, is characterized in that, comprise single notch filter;
Wherein, described single notch filter, comprising:
Dielectric layer;
Be arranged at the first metal layer of described dielectric layer first surface;
Be arranged at the second metal level of second of described dielectric layer, described first surface with described second relative;
Wherein, described the first metal layer comprises metal micro-strip paster, and described the second metal level comprises coplanar rippleGuide plate and metal ground plate, described co-planar waveguide plate comprises fractal defect terrain; Based on described dielectric layer,Described fractal defect terrain and described metal micro-strip paster are coupled.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201511025136.9A CN105609905B (en) | 2015-12-30 | 2015-12-30 | A kind of list notch filter and electronic equipment |
| US15/085,418 US9997817B2 (en) | 2015-12-30 | 2016-03-30 | Filter and electronic device |
| DE102016105828.9A DE102016105828A1 (en) | 2015-12-30 | 2016-03-30 | Filter and electronic device |
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| CN201511025136.9A CN105609905B (en) | 2015-12-30 | 2015-12-30 | A kind of list notch filter and electronic equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108767460A (en) * | 2018-05-23 | 2018-11-06 | 辽宁工程技术大学 | A kind of ultra-wideband antenna with three trap characteristics |
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