CN105609312B - Space support structure nano material and application of photovoltaic device thereof - Google Patents
Space support structure nano material and application of photovoltaic device thereof Download PDFInfo
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 62
- 238000006243 chemical reaction Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 230000002708 enhancing effect Effects 0.000 claims abstract description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 62
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 claims description 40
- 239000000243 solution Substances 0.000 claims description 40
- 239000011787 zinc oxide Substances 0.000 claims description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 20
- 235000010299 hexamethylene tetramine Nutrition 0.000 claims description 20
- 239000004312 hexamethylene tetramine Substances 0.000 claims description 20
- 235000015097 nutrients Nutrition 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 15
- 239000011259 mixed solution Substances 0.000 claims description 14
- 230000001105 regulatory effect Effects 0.000 claims description 13
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 12
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 239000002073 nanorod Substances 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 10
- 229910000343 potassium bisulfate Inorganic materials 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 10
- 239000001509 sodium citrate Substances 0.000 claims description 10
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 10
- 239000004408 titanium dioxide Substances 0.000 claims description 9
- DJWUNCQRNNEAKC-UHFFFAOYSA-L zinc acetate Chemical class [Zn+2].CC([O-])=O.CC([O-])=O DJWUNCQRNNEAKC-UHFFFAOYSA-L 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- JTNCEQNHURODLX-UHFFFAOYSA-N 2-phenylethanimidamide Chemical compound NC(=N)CC1=CC=CC=C1 JTNCEQNHURODLX-UHFFFAOYSA-N 0.000 claims description 4
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 4
- 238000000018 DNA microarray Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004020 luminiscence type Methods 0.000 claims description 3
- 239000002105 nanoparticle Substances 0.000 claims description 3
- 239000002078 nanoshell Substances 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 150000002910 rare earth metals Chemical class 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000002253 acid Chemical class 0.000 claims description 2
- 159000000011 group IA salts Chemical class 0.000 claims description 2
- 239000002135 nanosheet Substances 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 239000002096 quantum dot Substances 0.000 abstract description 16
- 239000000969 carrier Substances 0.000 abstract description 5
- 238000002425 crystallisation Methods 0.000 abstract description 5
- 230000008025 crystallization Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 2
- 238000005215 recombination Methods 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 238000001035 drying Methods 0.000 description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 13
- 229910001868 water Inorganic materials 0.000 description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 230000001276 controlling effect Effects 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- CHKVPAROMQMJNQ-UHFFFAOYSA-M potassium bisulfate Chemical compound [K+].OS([O-])(=O)=O CHKVPAROMQMJNQ-UHFFFAOYSA-M 0.000 description 6
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010951 brass Substances 0.000 description 3
- VDQVEACBQKUUSU-UHFFFAOYSA-M disodium;sulfanide Chemical compound [Na+].[Na+].[SH-] VDQVEACBQKUUSU-UHFFFAOYSA-M 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- 229920001021 polysulfide Polymers 0.000 description 3
- 239000005077 polysulfide Substances 0.000 description 3
- 150000008117 polysulfides Polymers 0.000 description 3
- 229910052979 sodium sulfide Inorganic materials 0.000 description 3
- ZGHLCBJZQLNUAZ-UHFFFAOYSA-N sodium sulfide nonahydrate Chemical compound O.O.O.O.O.O.O.O.O.[Na+].[Na+].[S-2] ZGHLCBJZQLNUAZ-UHFFFAOYSA-N 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 2
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 2
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- 239000005642 Oleic acid Substances 0.000 description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 2
- WQDUMFSSJAZKTM-UHFFFAOYSA-N Sodium methoxide Chemical compound [Na+].[O-]C WQDUMFSSJAZKTM-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 2
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 229910001961 silver nitrate Inorganic materials 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- YWOITFUKFOYODT-UHFFFAOYSA-N methanol;sodium Chemical compound [Na].OC YWOITFUKFOYODT-UHFFFAOYSA-N 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002165 photosensitisation Effects 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- HTRJDXQPCKIFIU-UHFFFAOYSA-N silver;ethanol;nitrate Chemical compound [Ag+].CCO.[O-][N+]([O-])=O HTRJDXQPCKIFIU-UHFFFAOYSA-N 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 description 1
- 235000010265 sodium sulphite Nutrition 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XKKVXDJVQGBBFQ-UHFFFAOYSA-L zinc ethanol diacetate Chemical compound C(C)O.C(C)(=O)[O-].[Zn+2].C(C)(=O)[O-] XKKVXDJVQGBBFQ-UHFFFAOYSA-L 0.000 description 1
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Abstract
The invention provides a novel photoanode-based enhanced photovoltaic device, which utilizes the advantages of the ultrahigh specific surface area, excellent crystallization quality and direct carrier transport path of a space support structure nano material, and the unique photoelectric characteristic of surface plasmon and the multi-exciton effect of quantum dots to increase the generation of carriers and reduce the recombination of the carriers, thereby improving the performance of the photovoltaic device. The solar cell includes: a substrate; a top electrode disposed on the substrate; a space bracket structure nano material arranged on the top electrode, namely a photo anode; a photoelectric conversion material disposed on the photo-anode, the photoelectric conversion material including a photoelectric conversion layer and a nano-metal structure enhancing device performance; a top electrode. The invention obtains a photovoltaic device with excellent performance and reasonable cost and a space bracket structure nano material for forming the cell.
Description
Technical Field
The invention relates to a photoelectric conversion technology of new energy and a nano material with a space bracket structure, in particular to a photovoltaic device based on a light anode with a space bracket structure, and more particularly relates to a surface plasmon enhanced solar cell taking the nano material with the space bracket structure as the light anode.
Background
As environmental and energy problems continue to worsen, strengthening environmental protection and developing clean energy have become a focus of high human attention. Solar electricity is an inexhaustible ideal clean energy, and solar energy is utilized through photovoltaic devices to become the target of researchers at home and abroad. The solar cell is subjected to three stages, namely, the first generation solar cell is based on a silicon wafer technology, and the second generation semiconductor solar cell is based on a semiconductor thin film technology, but the first generation solar cell is higher in cost, and the second generation solar cell is lower in efficiency and poor in stability. Third generation solar cells are now in the development stage. The third-generation solar cell mainly comprises an organic semiconductor solar cell, a quantum dot solar cell, a dye-sensitized solar cell, an organic hybrid-free solar cell, a double-junction multi-junction solar cell, an intermediate-band solar cell, a hot carrier solar cell and the like, and is expected to realize higher photoelectric conversion efficiency than the first-generation solar cell and keep the advantage of low cost of the second-generation solar cell.
However, currently, the controllable utilization part of the energy source accounts for only about 0.03% of the world energy source (Mrs Bulletin 2007, 32, 808 and 820). It is known that Shockley-queesser bottleneck exists in photoelectric conversion of a photovoltaic device, Ray optical Limit of the minimum thickness of a material required for absorbing light and loss of carriers in a transport process are the most important factors influencing the performance of the photovoltaic device. By texturing the surface of the solar cell and adopting a multilayer absorption structure (one type of energy band engineering), the photoelectric conversion efficiency of the solar cell is remarkably improved. However, the performance of the current solar cell is still insufficient for civilization. Therefore, in the research of solar cells, the problem to be troubled is how to further improve the photoelectric conversion efficiency of solar energy and reduce the preparation cost.
The quantum dot is an artificial atom and has a quantum confinement effect, and a solar cell based on the quantum dot, namely a quantum dot sensitized solar cell, can generate a multi-exciton effect through impact ionization, namely one photon can generate a plurality of electron-hole pairs. Therefore, the bottleneck of Shockley-Queisser can be overcome, and the photo-generated current density of the solar cell is improved. Unfortunately, the photoelectric conversion efficiency of the current quantum dot sensitized solar cell is not high (generally about 4%), because the photo anode thereof cannot provide a direct carrier transport path. For example for the most common mesoscopic porous titanium dioxide (TiO) at present2) Film, carrier being in TiO2Inter-particle transport, for example, results in poor transport and loss due to trapping by defects. Moreover, the current quantum dot solar cell photo-anode has a nano-rod shape,Spherical nanomaterials have poor antireflective effects on light, have a small specific surface area (resulting in a small surface area on which the quantum can be adsorbed), and cannot sufficiently absorb the solar spectrum. In addition, the poor crystal quality of the photo-anode also causes heat loss of carriers (electrons or holes), so that the photoelectric conversion efficiency of the solar cell is difficult to further improve.
In summary, the existing solar cells are either too high in cost (such as single crystalline silicon solar cells), too low in photoelectric conversion efficiency (such as organic solar cells) or unstable in performance (such as amorphous silicon solar cells), and these adverse factors severely restrict the marketization of photovoltaic power generation technology and the development and utilization of solar energy, so that the development of a photovoltaic device with high efficiency and reasonable cost and a photoanode of the device are urgently needed.
Disclosure of Invention
In order to solve the problems, the invention provides a photovoltaic device based on a space support structure nano material and a nano material with high specific surface area and a direct carrier passage thereof. The synthesis of the nano material is regulated and controlled by the ternary self-feedback regulating and controlling agent, so that the perfect nano material with the space bracket structure is obtained, and the nano material has the unique advantages of ultrahigh specific surface area (the specific surface area is tens of times of that of a nanorod array and hundreds of times of that of a planar structure), excellent crystallization quality (the crystallization quality is very good but the cost is low due to the adoption of the chemical liquid phase method for synthesis under high temperature and high pressure), a direct carrier transport path, good anti-reflection performance (the incident light is scattered in the direction or directly trapped in the nano structure) and the like. In addition, light regulation and control are realized by introducing surface plasmons so as to assist light absorption, the photoelectric conversion rate is accelerated, and meanwhile, the photoelectric conversion efficiency of the solar cell is improved.
The first purpose of the invention is to obtain a photovoltaic device based on the space support structure nano material, which has high photoelectric conversion efficiency and reasonable manufacturing cost.
A second object of the present invention is to obtain a nanomaterial, i.e. a space scaffold nanomaterial, that is well suited for use in solar cells, infrared stealth technology, integrated circuits, the field of luminescence and in biochips.
The third purpose of the invention is to provide a preparation method of the space scaffold structure nano material.
The fourth purpose of the invention is to provide the application of the space scaffold structure nano material.
In a first aspect of the invention, there is provided a photovoltaic device based on space scaffold nanomaterial, the device comprising: a substrate;
a top electrode disposed on the substrate;
a nanomaterial disposed on the counter electrode; the nano material is in a spatial bracket structure, and has ultrahigh specific surface area and a direct carrier passage;
a photoelectric conversion layer disposed on the photo-anode; wherein the photoelectric conversion material comprises a photoelectric conversion material and a nano metal structure for enhancing the performance of the device;
counter electrode
Substrate:the substrate of the present invention is not particularly limited as long as it does not limit the object of the present invention. Can be conductive glass, plastic flexible substrate, stainless steel and the like, and preferably adopts FTO glass.
Top electrode:the top electrode of the present invention is not particularly limited as long as it does not limit the object of the present invention. For example, fluorine-doped indium selenide oxide, silver paste, copper and the like with good ohmic contact performance can be adopted
Nano materials:the invention adopts the nano material with the space bracket structure as the photo-anode of the battery or the transport material of electrons. The nano-rod array has ultrahigh specific surface area which is tens of times that of a nano-rod array and hundreds of thousands of times that of a planar structure; excellent crystalline quality but low cost; direct carrier transport path and good anti-reflection performance. The kind of the nanomaterial is not particularly limited as long as it does not limit the object of the present invention. May be zinc oxide (ZnO), titanium dioxide (TiO2), a III-V semiconductor material, gold (Au), silver (Ag), copper (Cu), aluminum (Al) or silicon (Si). Preferably, ZnO is used. Example 1 of the invention gives the detailed synthesis of the zinc oxide space scaffold structured nanomaterialAnd obtaining the morphology of the spatial scaffold structure, see fig. 2, fig. 3 and fig. 4.
Photoelectric conversion layer: the photoelectric conversion material comprises a photoelectric conversion material and a nano metal structure for enhancing the performance of a device. The photoelectric conversion material is not particularly limited as long as it does not limit the object of the present invention. For example, the photoelectric conversion material contains a pn junction for generating and separating electrons and holes, and generally contains a p-type semiconductor and an n-type semiconductor; or a photosensitive material and a material capable of band matching with the photosensitizing material to achieve carrier transport (e.g., spiroMeOAD, etc.).
The nano-metal structure enhancing the device performance is not particularly limited as long as it does not impose a limitation on the object of the present invention. For example, the metal of the nano-metal structure may employ gold, silver, aluminum, copper, rare earth, or a combination thereof; the nano-metallic structures may be cubes, nanoparticles, nanoshells, nanorods, or combinations thereof. Preferably, they are between 1 and 100nm in size, more preferably 50nm in size.
Counter electrode: the counter electrode (or referred to as back electrode) of the present invention is not particularly limited as long as it does not limit the object of the present invention. Aluminum paste, gold, carbon, and the like can be selected. Preferably, aluminum paste is selected. Preferably, the counter electrode thickness is 200 nm.
In the second aspect of the present invention, a nano material, i.e. a space scaffold structure nano material, which is very suitable for solar cells, infrared stealth technology, integrated circuits, luminescence field and biochip field is obtained, and the specific technical scheme adopted is as follows:
a preparation method of a space scaffold structure nano material comprises the following steps:
(1) preparation of the substrate: the method comprises the steps of cleaning and preparing a seed crystal layer;
(2) preparing nutrient solution for the growth of the nano material;
(3) adding a ternary self-feedback regulator (preferably, a ternary synthesizer comprising alkaline salt, acid salt and double salt) into the nutrient solution for regulating and synthesizing the nano material;
(4) fixing the substrate in a closed container of nutrient solution containing a ternary self-feedback regulator;
(5) placing the closed container in the step (4) in a constant temperature device, and growing for a specific time
(6) Taking out the substrate after the growth in the step (5) is finished, and cleaning to obtain the nano material with the space bracket structure
Preferably, the nutrient solution for the growth of the zinc oxide nano material in the step (2) is a mixed solution of dehydrated zinc acetate and hexamethylenetetramine, and the concentration of the mixed solution is 0.1-50 mmol/L; most preferably the nutrient solution concentration is 30 mmol/L. The nutrient solution for the growth of the titanium dioxide nano material is a mixed solution of ethylene glycol, concentrated hydrochloric acid, n-butyl titanate and deionized water, wherein the most preferable concentration of the ethylene glycol is 8mol/L, the concentration of the concentrated hydrochloric acid is 2mol/L, and the concentration of the n-butyl titanate is 1 mol/L.
Most preferably, the ternary self-feedback regulating agent in the step (3) is sodium citrate, potassium bisulfate and hexamethylenetetramine, and the concentrations are 0.01mmol/L, 0.03mmol/L and 0.02mmol/L respectively.
Preferably, the growth temperature in the step (5) is 50-700 ℃, the growth time is 0.1-30 hours (abbreviated as 0.1-30 hours), and most preferably, the growth temperature is 200 ℃ and the growth time is 5 hours.
In a third aspect of the invention, the application of the space scaffold structure nano material is provided.
In a specific embodiment, the metal of the nano-metal structure for enhancing the device performance may be gold, silver, aluminum, copper, rare earth or a combination thereof. The nanometal structure enhancing device performance can be a cube, nanoparticle, nanoshell, nanorod, or combination thereof. Most preferably, the size of the metal structure is 50 nm.
Compared with the prior art, the invention has the following advantages and positive effects:
(1) the direct carrier transport channel is provided, so that the loss of carriers (electrons or holes) is greatly reduced;
(2) the nano-rod array has extremely high specific surface area which is tens of times that of a nano-rod array and hundreds of thousands of times that of a planar structure;
(3) the solar cell has good anti-reflection energy supply, and can scatter or directly trap the incident light in the nanostructure, so that the solar cell can be used for solar cells and can also be used in the fields of infrared stealth and the like;
(4) the space bracket structure nano material is a nano material with crossed, three-dimensional and highly oriented space height;
(5) the substrate has no special requirement, the seed crystal is used as a lattice mutation buffer layer, and the space bracket structure can grow on any substrate;
(6) the crystallization quality is very good, but the cost is low, and the defect recombination is reduced;
(7) the surface plasmons can also effectively regulate and control light, so that light absorption is enhanced, and the performance of the solar cell is improved;
(8) SP energy level is introduced into the surface plasmon, so that the photoelectric conversion rate and efficiency are increased;
(9) the quantum dots have quantum size confinement and quantum size effect, can generate multi-exciton effect in the solar cell, and greatly improve the photo-generated current density and the photoelectric conversion efficiency.
Drawings
For a better understanding of the objects, aspects and advantages of the present invention, reference is made to the following detailed description of the invention, taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a schematic view of an enhanced photovoltaic device based on space scaffold structure nanomaterial of the present invention;
FIG. 2 is a SEM top view of a zinc oxide space scaffold nanomaterial of embodiment 1 of the present invention;
FIG. 3 is an SEM high magnification view of a zinc oxide space scaffold nanomaterial of embodiment 1 of the present invention;
FIG. 4 is a sectional SEM image of the zinc oxide space scaffold structured nanomaterial of the embodiment 1 of the present invention;
fig. 5 is an SEM image of zinc oxide nanorods of embodiment 1 of the present invention.
Detailed Description
The invention will be further illustrated with reference to the following specific examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. The experimental methods in the following examples, which are not specified under specific conditions, are generally carried out under conventional conditions. Unless defined or stated otherwise, the technical and scientific terms used herein have the same meaning as is familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to those described herein can be used in the methods of the present invention.
Example 1: the invention is utilized to prepare zinc oxide nano zinc oxide with a space bracket structure.
(1) Cleaning the FTO with acetone and absolute ethyl alcohol in sequence, drying the FTO with deionized water and nitrogen, and then coating the FTO with tinfoil. Then preparing a zinc oxide seed crystal layer with the thickness of 3nm by adopting radio frequency magnetron sputtering, and then annealing for 1h at the temperature of 300 ℃.
(2) Putting the FTO obtained in the step (1) into an inner container of an autoclave, and pouring 60mL of a mixed solution of dehydrated zinc acetate and hexamethylenetetramine (in a molar ratio) prepared by 1: 1.
(3) Ternary self-feedback regulating and controlling agents, namely sodium citrate, potassium hydrogen sulfate and 5mL of hexamethylenetetramine with the concentrations of 0.01mmol/L, 0.03mmol/L and 0.02mmol/L respectively, are added into the nutrient solution.
(4) And (4) putting the autoclave in the step (3) into an oven to grow for 5h at the temperature of 200 ℃, then taking out the FTO, drying and rinsing with water to obtain the zinc oxide nano material.
(5) And (3) detecting the nano material obtained in the step (4) by using a Scanning Electron Microscope (SEM), and referring to a cross-sectional scanning image and a surface scanning image of the nano material in the step (4) in FIGS. 2, 3 and 4.
(6) As can be seen from FIGS. 2 and 3, the zinc oxide space scaffold structure nanomaterial with ultra-high specific surface area is obtained by using the method of the invention. As can be seen from fig. 4, this structure has a great advantage of direct electron transport path, which is a great advantage in device utilization. Compared with the zinc oxide nano rod prepared by the traditional method (figure 5), the specific surface area of the space scaffold structure is dozens of times of that of the nano rod.
Example 2: the invention is utilized to prepare the quantum dot sensitized solar cell
(1) Cleaning the FTO with acetone and absolute ethyl alcohol in sequence, drying the FTO with deionized water and nitrogen, and then coating the FTO with tinfoil. Then preparing a zinc oxide seed crystal layer with the thickness of 3nm by adopting radio frequency magnetron sputtering, and then annealing for 1h at the temperature of 300 ℃.
(2) Putting the FTO obtained in the step (1) into an inner container of an autoclave, and pouring 60mL of a mixed solution of dehydrated zinc acetate and hexamethylenetetramine (in a molar ratio) prepared by 1: 1.
(3) Ternary self-feedback regulating and controlling agents, namely sodium citrate, potassium hydrogen sulfate and 5mL of hexamethylenetetramine with the concentrations of 0.01mmol/L, 0.03mmol/L and 0.02mmol/L respectively, are added into the nutrient solution.
(4) And (4) putting the autoclave in the step (3) into an oven to grow for 5h at the temperature of 200 ℃, then taking out the FTO, drying and rinsing with water to obtain the zinc oxide nano material.
(5) Soaking the FTO obtained in the step (4) in Cd (NO3)2The 4H2O solution and the Na2S.9H2O solution were repeated 5 times.
(6) Se powder, Na2SO3 and 15ml water were mixed and then heated in a water bath 80 degrees with stirring for at least 2 h.
(7) And (3) mixing the solution obtained in the step (6) with a N (CH2COONa)3.H2O solution and A Cd (AC)2.2H2O (cadmium acetate) solution, stirring for 5min, vertically immersing the zinc oxide photoanode in the solution, and immersing for 5.5H in the dark.
(8) Sequentially soaking the samples obtained in the step (7) in ZnNO36H2O solution and Na2S.9H2O solution were repeated 2 times.
(9) An electrolyte was prepared from an aqueous solution of S and a solution of Na2S.9H2O, and stirred at 80 ℃ for 20 min.
(10) Mixing the brass sheet with the hydrochloric acid solution, then carrying out water bath for 15min in water at the temperature of 80 ℃, covering a part of the brass sheet with white glue to be used as an electrode, dripping the solution obtained in the step (9) on the rest part of the brass sheet, and reacting for 30min to prepare the electrode.
(11) The solar cells were encapsulated according to standard processes.
Example 3: the invention is utilized to prepare the nuclear shell quantum dot sensitized solar cell
(1)19.2mg of CdO is dissolved in a mixed solvent of 0.15mL of Oleic Acid (OA) and 3.0mL of Octadecene (ODE) at 250 ℃ under the protection of nitrogen;
(2) 1.0mLODE-S (0.1M) was injected into the reaction system, and stirred at 250 ℃ for 1min, after which the system temperature was lowered to 200 ℃ and the CdSe shell started to grow.
(3) Cleaning the FTO with acetone and absolute ethyl alcohol in sequence, drying the FTO with deionized water and nitrogen, and then coating the FTO with tinfoil. Then preparing a zinc oxide crystal layer with the thickness of 10nm by adopting radio frequency magnetron sputtering, and then annealing for 1h at the temperature of 300 ℃.
(4) And (3) putting the FTO obtained in the step (3) into an inner container of an autoclave, and pouring 60mL of a mixed solution of dehydrated zinc acetate and hexamethylenetetramine (in a molar ratio) prepared in a ratio of 1: 1.
(5) Ternary self-feedback regulating and controlling agents, namely sodium citrate, potassium hydrogen sulfate and 5mL of hexamethylenetetramine with the concentrations of 0.01mmol/L, 0.03mmol/L and 0.02mmol/L respectively, are added into the nutrient solution.
(6) And (4) putting the autoclave in the step (5) into an oven to grow for 5h at the temperature of 200 ℃, taking out the FTO, drying, and lightly rinsing with water to obtain the zinc oxide nano material.
(7)30uL of MAP-coated quantum dot aqueous solution (absorbance of the first exciton absorption peak of 2.0) was directly taken up on the electrode surface and allowed to remain unchanged for 2 hours before continuous washing with water and alcohol, followed by drying with nitrogen.
(8) After the deposition was complete, the quantum dots were absorbed by a thin film of zinc sulfide-coated titanium dioxide by two alternate immersions in 0.1M Zn- (OAc)2 and 0.1M Na2S for one minute.
(9) After coating with the zinc sulfide layer, the titanium dioxide electrode is sintered in a muffle furnace (200-400 ℃) for a time period ranging from 0.5 to 5 min.
(10)2.0M Na2S, 2.0M 2.0M S and 0.2M KCL were mixed in a methanol and water mixture (3: 7V/V) to obtain a polysulfide electrolyte.
(11) The copper was immersed in the HCL solution for 5min at 70 ℃ and then sulfided by injecting a polysulfide solution to obtain a Cu2S counter electrode.
(12) The solar cell was fabricated using a 50um thick scotch spacer and 10uL polysulfide electrolyte to mount a counter electrode and a quantum dot sensitized photoanode.
Practice ofExample 4: preparation of Ag by the invention2S quantum dot sensitized solar cell
(1) Cleaning the FTO with acetone and absolute ethyl alcohol in sequence, drying the FTO with deionized water and nitrogen, and then coating the FTO with tinfoil. Then preparing a zinc oxide seed crystal layer with the thickness of 3nm by adopting radio frequency magnetron sputtering, and then annealing for 1h at the temperature of 300 ℃.
(2) Putting the FTO obtained in the step (1) into an inner container of an autoclave, and pouring 60mL of a mixed solution of dehydrated zinc acetate and hexamethylenetetramine (in a molar ratio) prepared by 1: 1.
(3) Ternary self-feedback regulating and controlling agents, namely sodium citrate, potassium hydrogen sulfate and 5mL of hexamethylenetetramine with the concentrations of 0.01mmol/L, 0.03mmol/L and 0.02mmol/L respectively, are added into the nutrient solution.
(4) And (4) putting the autoclave in the step (3) into an oven to grow for 5h at the temperature of 200 ℃, then taking out the FTO, drying and rinsing with water to obtain the zinc oxide nano material.
(5) The silver nitrate crystals were dissolved in ethanol to obtain a 0.1mol ethanol silver nitrate solution, which was then stirred for 3 minutes.
(6) The zinc oxide photoanode was immersed in a silver nitrate solution at 25 ℃ for 1 minute, then washed with ethanol, and then immersed in a 0.1mol sodium methoxide solution for 3 minutes.
(7) The two-step process of steps (5) and (6) forms a SILAR cycle. The sample is subjected to an n SILAR cycle, referred to herein as silver 2 (n).
(8) And (3) immersing the zinc oxide photoanode obtained in the step (7) into 0.1mol of ethanol zinc acetate solution for 1 minute, and then immersing into 0.1mol of sodium methanol for 1 minute.
(9) The solar cells were encapsulated according to standard processes.
Example 5: the invention is utilized to prepare the enhanced quantum dot battery based on the photo-anode with the space bracket structure
(1) Cleaning the FTO with acetone and absolute ethyl alcohol in sequence, drying the FTO with deionized water and nitrogen, and then coating the FTO with tinfoil. Then preparing a zinc oxide seed crystal layer with the thickness of 3nm by adopting radio frequency magnetron sputtering, and then annealing for 1h at the temperature of 300 ℃.
(2) Putting the FTO obtained in the step (1) into an inner container of an autoclave, and pouring 60mL of a mixed solution of dehydrated zinc acetate and hexamethylenetetramine (in a molar ratio) prepared by 1: 1.
(3) Ternary self-feedback regulating and controlling agents, namely sodium citrate, potassium hydrogen sulfate and 5mL of hexamethylenetetramine with the concentrations of 0.01mmol/L, 0.03mmol/L and 0.02mmol/L respectively, are added into the nutrient solution.
(4) And (4) putting the autoclave in the step (3) into an oven to grow for 5h at the temperature of 200 ℃, then taking out the FTO, drying and rinsing with water to obtain the zinc oxide nano material.
(5) Uniformly coating a methanol solution (according to a volume ratio of 5: 95)5 mm Pb (NO3)2 and 5 mm Na2S on the zinc oxide photo anode obtained in the step (4) by alternately rotating coating, and obtaining the enhanced quantum dot battery by adopting a continuous ionic layer adsorption and reaction (SILAR) method.
Example 6: the perovskite solar cell prepared by the method
(1) Cleaning the FTO with acetone and absolute ethyl alcohol in sequence, drying the FTO with deionized water and nitrogen, and then coating the FTO with tinfoil. Then preparing a zinc oxide seed crystal layer with the thickness of 3nm by adopting radio frequency magnetron sputtering, and then annealing for 1h at the temperature of 300 ℃.
(2) Putting the FTO obtained in the step (1) into an inner container of an autoclave, and pouring 60mL of a mixed solution of dehydrated zinc acetate and hexamethylenetetramine (in a molar ratio) prepared by 1: 1.
(3) Ternary self-feedback regulating and controlling agents, namely sodium citrate, potassium hydrogen sulfate and 5mL of hexamethylenetetramine with the concentrations of 0.01mmol/L, 0.03mmol/L and 0.02mmol/L respectively, are added into the nutrient solution.
(4) And (4) putting the autoclave in the step (3) into an oven to grow for 5h at the temperature of 200 ℃, then taking out the FTO, drying and rinsing with water to obtain the zinc oxide nano material.
(5) The spacer layer of the ZnO space bracket structure is coated with Pbl2 in DMF (462mg/mL) by spin coating, and then dried under the environment of 70 ℃ temperature.
(6) The TiO2/Pbl2 composite layer was immersed in a 2-propanol solution (10mg/mL) of CH3NH3I for 20s, taken out, spun dry, and annealed at 70 ℃ for 30 min. Pbl2 reacts with CH3NH3I, CH3NH3Pbl3 grows through crystallization to obtain an active layer covering layer with the thickness of 250nm, and the perovskite absorption layer is obtained after drying.
(7) The hole transport layer was prepared by spin coating a solution of spiroMeOAD in chlorobenzene (73 mg spiroMeOAD, 29uLKF209, 29uL tBP, and 17.5uL of lithium bis (trifluoromethanesulfonylimide) in acetonitrile (520mg/mL) per mL of chlorobenzene).
(8) And thermally evaporating an 80nm gold film above the hole transport layer to form a back electrode.
Claims (10)
1. An enhanced photovoltaic device based on space scaffold structure nanomaterial, the enhanced photovoltaic device comprising: a substrate; a top electrode disposed on the substrate; a nanomaterial, i.e., photo-anode, disposed on the top electrode; the shape of the nano material is a spatial support structure, the nano material has ultrahigh specific surface area and a direct carrier passage, and the spatial support structure is a nano material which is formed by nano sheets and is high in spatial height intersection, three-dimensional and high in orientation; a photoelectric conversion layer disposed on the photo-anode; wherein the photoelectric conversion layer comprises a photosensitive material and a nano metal structure for enhancing the performance of the device; a counter electrode.
2. The enhanced photovoltaic device according to claim 1, wherein the metal in the device performance enhancing nanometal structure is gold, silver, aluminum, copper, rare earth or combinations thereof.
3. The enhanced photovoltaic device according to claim 1, wherein said device performance enhancing nanometal structure is one of a cube, a nanoparticle, a nanoshell, a nanorod.
4. The enhanced photovoltaic device according to claim 1, wherein said space scaffold nanomaterial is zinc oxide (ZnO), titanium dioxide (TiO)2) A group III-V semiconductor material or silicon (Si).
5. A preparation method of a space scaffold structure nano material for an enhanced solar cell is disclosed, wherein the space scaffold structure nano material is a nano material which is composed of nano sheets and has the spatial height of intersection, three-dimensional and high orientation, and the preparation method is characterized by comprising the following steps of: (1) preparation of the substrate: the method comprises the steps of cleaning a substrate and preparing a seed crystal layer on the surface of the substrate; (2) preparing nutrient solution for the growth of the nano material; (3) adding a ternary self-feedback regulating agent into the nutrient solution, wherein the ternary self-feedback regulating agent consists of alkaline salt, acid salt and hexamethylenetetramine; (4) fixing the substrate in a closed container containing the nutrient solution prepared in the step (3); (5) placing the closed container in a constant temperature device, and reacting for a period of time; (6) and after the reaction is finished, taking out and cleaning the substrate to obtain the nano material with the space bracket structure.
6. The method of claim 5, wherein the seed layer has a thickness of 3nm and the annealing temperature of the seed layer is 300 ℃.
7. The preparation method according to claim 5, wherein the nutrient solution in the step (2) is a zinc oxide growth nutrient solution or a titanium dioxide growth nutrient solution, the zinc oxide growth nutrient solution is a mixed solution of dehydrated zinc acetate and hexamethylenetetramine, and the concentrations of the dehydrated zinc acetate and the hexamethylenetetramine are both 0.1-50 mmol/L; the titanium dioxide growth nutrient solution is a mixed solution of ethylene glycol, concentrated hydrochloric acid, n-butyl titanate and deionized water, wherein the concentration of the ethylene glycol in the mixed solution is 8mol/L, the concentration of the concentrated hydrochloric acid in the mixed solution is 2mol/L, and the concentration of the n-butyl titanate in the mixed solution is 1 mol/L.
8. The method of claim 5, wherein the ternary self-feedback control agent is composed of sodium citrate, potassium bisulfate, and hexamethylenetetramine.
9. The preparation method of claim 5, wherein the ternary self-feedback regulating agent consists of sodium citrate, potassium bisulfate and hexamethylenetetramine, wherein the concentrations of the sodium citrate, the potassium bisulfate and the hexamethylenetetramine are 0.01mmol/L, 0.03mmol/L and 0.02mmol/L, respectively.
10. The use of the space scaffold nanomaterial of claim 4 in solar cells, infrared stealth technology, integrated circuits, the field of luminescence, and biochips.
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| CN102097214A (en) * | 2010-11-21 | 2011-06-15 | 沈阳工业大学 | Preparation method of zinc oxide-based solar cell electrode |
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| CN102097214A (en) * | 2010-11-21 | 2011-06-15 | 沈阳工业大学 | Preparation method of zinc oxide-based solar cell electrode |
Non-Patent Citations (2)
| Title |
|---|
| "多孔ZnO纳米花电子传输层对有机太阳能电池性能的优化";刘冬月 等;《光电子·激光》;20140715;第25卷(第7期);第1363-1369页 * |
| "银纳米片等离子体效应增强有机太阳能电池及其性能优化研究";邹润秋 等;《发光学报》;20150715;第36卷(第7期);第788-794页 * |
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