CN105589300A - Illuminating system for photoetching - Google Patents
Illuminating system for photoetching Download PDFInfo
- Publication number
- CN105589300A CN105589300A CN201610009315.1A CN201610009315A CN105589300A CN 105589300 A CN105589300 A CN 105589300A CN 201610009315 A CN201610009315 A CN 201610009315A CN 105589300 A CN105589300 A CN 105589300A
- Authority
- CN
- China
- Prior art keywords
- scatter plate
- group
- distribution
- scanning direction
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
An illuminating system for photoetching comprises a light source as well as a beam expanding lens set, a diffraction optic element and the like arranged in the emergent light direction of the light source sequentially and further comprises a scatter plate, wherein the scatter plate is placed in front of or behind a microlens array, angular distribution of an output light beam of the scatter plate in the scanning direction meets Gaussian distribution, the scatter plate comprises a single-faced or double-faced one-dimensional cylindrical mirror array, the one-dimensional cylindrical mirror array comprises cylindrical mirrors with different apertures pLS,n, and the ratio of the aperture pLS,n of each cylindrical mirror to the focal length fT of the corresponding cylindrical mirror meets the specific conditions. Devices in uniform distribution and Gaussian distribution are separated, high uniformity in the non-scanning direction is easy to realize, uniform light field distribution is realized with the adoption of the microlens array, Gaussian light field distribution is realized by means of the scatter plate, finally, super-Gaussian light field distribution is realized in the scanning direction of a rear focal plane of a collecting lens set, and the super-Gaussian light intensity distribution outline can be effectively controlled by designing different scatter plates.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of off-axis illumination system for ultraviolet/deep-UV lithography machine.
Background technology
Along with the development of large scale integrated circuit, the resolution requirement of optical patterning is more and more higher, also more and more higher to the requirement of photo-etching machine illumination system. The advanced litho machine of the main flow at present main step-scan mode that adopts is realized exposure. Wherein, be less than or equal to the litho machine of 45nm for characteristic size, illuminator should form a kind of light distribution of super-Gaussian on scanning direction, and forms Uniform Illumination on non-scanning direction. Its objective is in the process of scanning and avoid as small as possible the pulse energy of laser instrument to shake the exposure dose error of the scanning area of bringing, thus the uniformity of guarantee photoetching line thickness.
In current photo-etching machine illumination system, the method that realizes scanning direction super-Gaussian light distribution on mask face mainly adopts out of focus method, but out of focus method is difficult to realize super-Gaussian accurately to distribute, conventionally only can obtain trapezoidal profile or Triangle-Profile and be similar to super-Gaussian distribution. formerly technology " a kind of lithography illuminating system " (Chinese invention patent, publication number: CN100559277C) in, a kind of lithography illuminating system is disclosed, the microlens array module that utilization has astigmatism realizes trapezoidal illumination, and this microlens array module comprises two microlens arrays and two pairs of edge of a knife arrays. the method has utilized the aberration of microlens array to realize trapezoidal illumination, the microlens array that problem is to have aberration can affect the illumination uniformity of non-scanning direction, cannot adopt this scheme to realize trapezoidal illumination so be less than the litho machine of 45nm for characteristic size, and this scheme also cannot realize the light distribution of super-Gaussian. formerly technology " a kind of even smooth unit of chirp formula compound eye for deep-ultraviolet lithography illumination system " (Chinese invention patent, publication number: CN201410160658) in, disclosing one utilizes the microlens array of chirp (warbling) structure to realize the method for Uniform Illumination, the method can weaken interferes the impact of speckle on illuminated area equalization of intensity, but the processing of microlens array is too complicated, and owing to having compared with the existence of large micro-lenses unit, so cannot obtain good uniformity in reality, this scheme can not obtain super-Gaussian light distribution on scanning direction.
Summary of the invention
The object of the invention is to overcome the deficiency of above-mentioned formerly technology, a kind of illuminator for ultraviolet/deep-UV lithography machine is provided, this illuminator is by introducing a scatter plate, to modulating from the light of lenticule outgoing, and act on through the Fourier transformation of condenser group on the back focal plane scanning direction of condenser group and produce super-Gaussian light distribution. The method is conducive to overcome the problem that cannot obtain in non-scanning direction higher illumination uniformity containing aberration microlens array, and this scatter plate can process by ripe laser direct-writing exposure technology, can effectively reduce the production cost of litho machine. Be applicable to any ultraviolet/DUV wave band lithography illuminating system.
Technical solution of the present invention is as follows:
A kind of lithography illuminating system, comprise light source, and place successively beam expanding lens group along the emergent light direction of this light source, diffraction optical element, zoom collimating mirror group, microlens array, condenser group, scanning slit, illuminated mirror group and mask plate, its feature is, also comprise scatter plate, this scatter plate is placed on front or the rear of described microlens array, the angle of the output beam of described scatter plate on scanning direction distributes and meets Gaussian distribution, it is that the angle that produced respectively by the one dimension cylindrical lens array of different bores or radius of curvature is distributed in far field stack and forms that the Gauss angle of described scatter plate distributes, described scatter plate is made up of the one dimension cylindrical lens array of single or double, this one dimension cylindrical lens array is by different bore pLS,nCylindrical mirror composition, the bore p in this cylindrical mirrorLS,nWith cylindrical mirror focal distance fTRatio, meet the following conditions:
Wherein, fFThe focal length of described condenser group, dT，nFor the width of each little distributed rectangular, n organizes contour distributed rectangular with n to be formed by stacking Gaussian distribution.
Described scanning slit has four movable blades, and is positioned on the back focal plane of described condenser group, by the mobile cutting realizing light field of blade.
Described illuminated mirror group, for projecting to described mask plate by the light field of described scanning slit, realizes the illumination to mask plate.
Gauss's light intensity that described scatter plate forms on the scanning direction of described condenser group back focal plane is distributed as
Wherein, σ is the waist radius of Gauss's light distribution, and y is the coordinate points on scanning direction.
The output light field of described microlens array on the scanning direction of described condenser group back focal plane is shown according to flat-top distribution table:
Rect(y)＝const(|y|＜a)(2)
Wherein, a represents the top half-breadth that flat-top distributes.
The super-Gaussian light distribution producing on the scanning direction of described condenser group back focal plane is the convolution of Gauss's light distribution Gauss (y) peaceful top light distribution Rect (y) of producing on the scanning direction of described condenser group back focal plane respectively of described scatter plate and described microlens array, can be shown by formula table:
In described scatter plate, putting in order of the cylindrical mirror of different bores and focal length ratio can, for random, also can be arranged according to designed order. The bore p of the cylindrical mirror of identical bore and focal length ratio in described scatter plateLSIdentical, focal distance fTDifference, also can be bore pLSDifferent, focal distance fTIdentical, also can be bore pLSAnd focal distance fTAll different (completely not identical or incomplete same).
The one side of described scatter plate is plane, and another side is cylindrical lens array; Described scatter plate can be also that two sides is all micro-cylindrical lens array. Described scatter plate central column face mirror can be convex mirror, can be also concave mirror.
The wavelength of described light source can be 157nm, 193nm, 248nm.
Described beam expanding lens group is amplified the size of the laser beam of described light source transmitting by the multiplication factor of design.
Described diffraction optical element is the optical element with certain micro-structural, for jointly obtaining light illumination mode required on litho machine pupil plane, the Chinese invention patent that the method for designing of described diffraction optical element is CN102109676B referring to publication number with described zoom collimating mirror group.
The method for designing of described zoom collimating mirror group is known by the researcher in this field.
The Chinese invention patent that the method for designing of described microlens array is CN103217872A referring to publication number, described microlens array is positioned on the front focal plane of described condenser group.
Described scatter plate is positioned at front or the rear of described microlens array.
Described condenser group is assembled the light beam seeing through after described microlens array and described scatter plate, and produces super-Gaussian light distribution on the scanning direction of described condenser group back focal plane.
Compared with technology formerly, the present invention has following technological merit:
(1) the super-Gaussian optical field distribution that the present invention adopts microlens array and scatter plate to form to need on scanning direction in photo-etching machine illumination system, with traditional containing compared with the microlens array of aberration, by realizing, homogenising distributes the method and the device isolation of Gaussian distribution, is conducive to realize the high uniformity on non-scanning direction.
(2) the present invention adopts microlens array to realize uniform light field distribution, recycling scatter plate is realized Gauss light field distribution, finally on the scanning direction of condenser group back focal plane, realize super-Gaussian optical field distribution, can effectively control super-Gaussian light distribution profile by designing different scatter plates.
(3) scatter plate in the present invention can adopt laser direct-writing exposure technique to process, and is conducive to reduce the manufacturing cost of photo-etching machine illumination system.
Brief description of the drawings
Fig. 1 is one of structured flowchart of two kinds of lithography illuminating systems of the present invention.
Fig. 2 be two kinds of lithography illuminating systems of the present invention structured flowchart two.
Fig. 3 is a kind of for producing the light channel structure schematic diagram of super-Gaussian light distribution on the scanning direction at condenser group back focal plane of microlens array, scatter plate and the combination of condenser group.
Fig. 4 is a kind of schematic diagram that utilizes contour distributed rectangular to approach Gaussian distribution.
Fig. 5 is the optical texture schematic diagram of scatter plate central column face mirror array.
Detailed description of the invention
Below in conjunction with accompanying drawing and example, the present invention is further illustrated, but should not limit the scope of the invention with this.
First refer to Fig. 1 and Fig. 2, Fig. 1 and Fig. 2 are the structured flowcharts of two kinds of lithography illuminating systems of the present invention. Lithography illuminating system is made up of light source 101, beam expanding lens group 102, diffraction optical element 103, zoom collimating mirror group 104, microlens array 105, scatter plate 106, condenser group 107, scanning slit 108, illuminated mirror group 109 and mask plate 110. Described scatter plate 106 is key elements for generation of super-Gaussian light distribution on scanning direction in lithography illuminating system. Described scatter plate 106 can be positioned at (Fig. 1) before described microlens array 105, also can be positioned at (Fig. 2) after described microlens array 105.
The wavelength of described light source 101 can be 157nm, 193nm, 248nm.
Described beam expanding lens group 102 is amplified the size of described light source 101 Emission Lasers light beams by the multiplication factor of design.
Described diffraction optical element 103 is the optics with certain micro-structural, be used for the light illumination mode jointly obtaining on litho machine pupil plane with described zoom collimating mirror group 104, the Chinese invention patent that the method for designing of described diffraction optical element 103 is CN102109676B referring to publication number.
The method for designing of described zoom collimating mirror group 104 is known by the researcher in this field.
The Chinese invention patent that the method for designing of described microlens array 105 is CN103217872A referring to publication number, described microlens array 105 is positioned on the front focal plane of described condenser group 104.
106 fronts in described microlens array 105, described scatter plate position or rear.
Described condenser group 107 is assembled the light beam seeing through after described microlens array 105 and described scatter plate 106, and on the back focal plane of described condenser group 107, produces along the super-Gaussian distribution of scanning direction with along the equally distributed light field in non-scanning direction.
Described scanning slit 108 has four movable blades, and four blades are positioned on the back focal plane of described condenser group 107, by the mobile cutting realizing light field of blade.
Described illuminated mirror group 109, for projecting to described mask plate 110 by the light field of described scanning slit 108, realizes the illumination to mask plate.
Described scatter plate 106 can be between microlens array 105 and condenser group 107, also can be between described zoom collimating mirror group 104 and described microlens array 105. Fig. 3 be described microlens array 105, described scatter plate 106 and described condenser group 107 be combined into a kind of for produce the light channel structure schematic diagram of super-Gaussian light distribution on scanning direction, scatter plate 106 described in Fig. 3 is between microlens array 105 and condenser group 107. The angle of the output beam of described scatter plate 106 on scanning direction distributes and meets Gaussian distribution, it is that the angle that produced respectively by the one dimension cylindrical lens array of different bores or radius of curvature is distributed in far field stack and forms that the Gauss angle of described scatter plate 106 distributes, and described scatter plate 106 is made up of the one dimension cylindrical lens array of single or double.
According to the general principle of Fourier optics, the light distribution on the back focal plane of described condenser group 107 is the convolution that described microlens array 105 and described scatter plate 106 form respectively light distribution on the scanning direction of described condenser group 107 back focal planes,
Wherein, y represents the coordinate points in the direction of scanning direction, σ is the waist radius of Gauss's light distribution Gauss (y) of exporting on the scanning direction of described condenser group 107 back focal planes of described scatter plate 106, and a is the top half-breadth of the flat-top light distribution Rect (y) that exports on the scanning direction of described condenser group 107 back focal planes of described microlens array 105.
Gauss's light distribution Gauss (y) that described scatter plate 106 is exported on the scanning direction of described condenser group 107 back focal planes is
The flat-top light distribution Rect (y) that described microlens array 105 is exported on the scanning direction of described condenser group 107 back focal planes is
Rect(y)＝const(|y|＜a)(3)
Described scatter plate 106 is made up of the one dimension cylindrical lens array of single or double, as shown in Figure 4, described scatter plate 106 central column face mirrors can be protruding can be also recessed.
The method for designing of described scatter plate 106 is that the Gaussian distribution n that first it formed on the scanning direction of described condenser group 107 back focal planes organizes contour distributed rectangular and approaches, and as shown in Figure 5, obtains the width d of each little distributed rectangularT，n; Then use following formula (4) to calculate the bore p in a described scatter plate 106n cylindrical mirrorLS,nAnd focal distance fTRatio:
Wherein, fFIt is the focal length of described condenser group 107. Different bore p in described scatter plate 106LS,nWith focal distance fTPutting in order of the cylindrical mirror of ratio can, for random, also can be arranged according to designed order. Identical bore p in described scatter plate 106LS,nWith focal distance fTThe bore p of the cylindrical mirror of ratioLS,nIdentical, focal distance fTDifference, also can be bore pLS,nDifferent, focal distance fTIdentical, also can be bore pLS,nAnd focal distance fTAll different (completely not identical or incomplete same).
Below by a specific embodiment, further illustrate the operation principle of lithography illuminating system of the present invention.
Specific embodiment
In embodiment, the index path of lithography illuminating system as shown in Figure 1. The pulse laser that described light source 101 emission wavelengths are 193nm, spot size is 3 × 3mm, and the beam sizes requirement of inciding on diffraction light sources element 103 is 12 × 12mm, and the multiplication factor of described beam expanding lens group 102 is 4.
The outgoing aperture half-angle of described diffraction optical element 103 is 25mrad, the light illumination mode that described diffraction optical element 103 produces is traditional lighting, the focal length of described zoom collimating mirror group 104 is 200mm, and the light inciding on described microlens array 105 is that diameter is 10mm circular light spot.
The focal distance f of described condenser group 107FFor 200mm, before not adding described scatter plate 106, described microlens array 105 is 100 × 10mm (non-scanning direction × scanning direction) with the square uniform light spots obtaining of described condenser group 107 on the back focal plane of described condenser group 107, and a value is 5mm. Described scatter plate 106 is 2.5mm with the waist radius σ of the Gaussian distribution that described condenser group 107 forms on the scanning direction of described condenser group 107 back focal planes, after described scatter plate 106 is placed in microlens array 105, described microlens array 105, described scatter plate 106 distribute with the super-Gaussian that obtains on the scanning direction of described condenser group 107 on described condenser group 107 back focal planes.
Described scatter plate 106 adopts one side one dimension cylindrical lens array to form, the curvature distribution of the cylindrical lens array in described scatter plate 106 is in scanning direction, described scatter plate 106 and 10 contour rectangles of Gaussian distribution that described condenser group 107 forms on the scanning direction of described condenser group 107 back focal planes are approached, obtain the width d of 10 little distributed rectangularTBe respectively 12.9mm, 10.8mm, 9.3mm, 8.1mm, 7.1mm, 6.1mm, 5.1mm, 2.8mm and 0.6mm, in described scatter plate 106, the focal length of all cylindrical mirrors is 1.5mm, can be calculated 10 cylindrical mirror bores by formula (4) and be respectively 96.6 μ m, 80.7 μ m, 69.9 μ m, 60.9 μ m, 53.0 μ m, 45.5 μ m, 38.0 μ m, 30.0 μ m, 20.7 μ m and 4.5 μ m, arrange in described scatter plate 106 these 10 cylindrical mirrors as one-period, putting in order of 10 cylindrical mirrors in each cycle can be different, described microlens array 105, described scatter plate 106 is about 10.4mm with the full width at half maximum that the super-Gaussian that described condenser group 107 obtains on the scanning direction of the back focal plane of described condenser group 107 distributes.
Described scanning slit 108 there are four movable blade, four movable blade are positioned on the back focal plane of condenser group 107, described illuminated mirror group 109 projects to the illumination light field at scanning slit 108 places on mask plate 110, realizes the illumination to mask plate 110.
Claims (3)
1. a lithography illuminating system, comprises light source (101), and along this light source (101)Emergent light direction is placed beam expanding lens group (102), diffraction optical element (103), zoom collimation successivelyMirror group (104), microlens array (105), condenser group (107), scanning slit (108),Illuminated mirror group (109) and mask plate (110), is characterized in that, also comprises scatter plate (106),This scatter plate (106) is placed on front or the rear of described microlens array (105), described inThe angle of the output beam of scatter plate on scanning direction distributes and meets Gaussian distribution, described scatter plateIt is the angle being produced respectively by the one dimension cylindrical lens array of different bores or radius of curvature that Gauss angle distributesBe distributed in far field stack and form, described scatter plate is made up of the one dimension cylindrical lens array of single or double,This one dimension cylindrical lens array is by different bore pLS,nCylindrical mirror composition, the bore in this cylindrical mirrorpLS,nWith cylindrical mirror focal distance fTRatio, meet the following conditions:
Wherein, fFThe focal length of described condenser group, dT,nFor the width of each little distributed rectangular, nBe formed by stacking Gaussian distribution for organize contour distributed rectangular with n.
2. lithography illuminating system according to claim 1, is characterized in that, described scanningSlit (108) has four movable blades, and is positioned at rear Jiao of described condenser group (107)On face, by the mobile cutting realizing light field of blade.
3. lithography illuminating system according to claim 1, is characterized in that, described illuminationMirror group (109) is for projecting to described mask plate by the light field of described scanning slit (108)(110) upper, realize the illumination to mask plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610009315.1A CN105589300A (en) | 2016-01-07 | 2016-01-07 | Illuminating system for photoetching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610009315.1A CN105589300A (en) | 2016-01-07 | 2016-01-07 | Illuminating system for photoetching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105589300A true CN105589300A (en) | 2016-05-18 |
Family
ID=55928982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610009315.1A Pending CN105589300A (en) | 2016-01-07 | 2016-01-07 | Illuminating system for photoetching |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105589300A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114556224A (en) * | 2019-10-14 | 2022-05-27 | Asml荷兰有限公司 | Method and apparatus for coherence scrambling in metrology applications |
| CN115185093A (en) * | 2022-07-25 | 2022-10-14 | 中国科学院光电技术研究所 | Flat-top laser beam shaping method |
| CN115542679A (en) * | 2022-09-05 | 2022-12-30 | 上海镭望光学科技有限公司 | Modulation plate transmittance distribution generation method, modulation plate and photoetching machine illumination system |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070206171A1 (en) * | 2004-02-17 | 2007-09-06 | Carl Zeiss Smt Ag | Illumination system for a microlithographic projection exposure apparatus |
| CN101174093A (en) * | 2006-11-03 | 2008-05-07 | 上海微电子装备有限公司 | Photo-etching illumination system |
| CN101421674A (en) * | 2006-02-17 | 2009-04-29 | 卡尔蔡司Smt股份有限公司 | Microlithographic illumination system, projection exposure apparatus comprising an illumination system of this type |
| CN103092006A (en) * | 2013-01-25 | 2013-05-08 | 中国科学院上海光学精密机械研究所 | Lithography illumination system |
| CN103412465A (en) * | 2013-07-01 | 2013-11-27 | 中国科学院上海光学精密机械研究所 | Illuminating system of step scanning projection mask aligner |
| CN103926804A (en) * | 2014-04-21 | 2014-07-16 | 北京理工大学 | Chirp-type fly-eye uniform light unit of deep ultraviolet lithography illuminating system |
-
2016
- 2016-01-07 CN CN201610009315.1A patent/CN105589300A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070206171A1 (en) * | 2004-02-17 | 2007-09-06 | Carl Zeiss Smt Ag | Illumination system for a microlithographic projection exposure apparatus |
| CN101421674A (en) * | 2006-02-17 | 2009-04-29 | 卡尔蔡司Smt股份有限公司 | Microlithographic illumination system, projection exposure apparatus comprising an illumination system of this type |
| CN102799079A (en) * | 2006-02-17 | 2012-11-28 | 卡尔蔡司Smt有限责任公司 | Illumination system for a microlithographic projection exposure apparatus |
| CN101174093A (en) * | 2006-11-03 | 2008-05-07 | 上海微电子装备有限公司 | Photo-etching illumination system |
| CN103092006A (en) * | 2013-01-25 | 2013-05-08 | 中国科学院上海光学精密机械研究所 | Lithography illumination system |
| CN103412465A (en) * | 2013-07-01 | 2013-11-27 | 中国科学院上海光学精密机械研究所 | Illuminating system of step scanning projection mask aligner |
| CN103926804A (en) * | 2014-04-21 | 2014-07-16 | 北京理工大学 | Chirp-type fly-eye uniform light unit of deep ultraviolet lithography illuminating system |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114556224A (en) * | 2019-10-14 | 2022-05-27 | Asml荷兰有限公司 | Method and apparatus for coherence scrambling in metrology applications |
| CN114556224B (en) * | 2019-10-14 | 2024-05-14 | Asml荷兰有限公司 | Method and apparatus for coherence scrambling in metrology applications |
| CN115185093A (en) * | 2022-07-25 | 2022-10-14 | 中国科学院光电技术研究所 | Flat-top laser beam shaping method |
| CN115542679A (en) * | 2022-09-05 | 2022-12-30 | 上海镭望光学科技有限公司 | Modulation plate transmittance distribution generation method, modulation plate and photoetching machine illumination system |
| CN115542679B (en) * | 2022-09-05 | 2024-04-26 | 上海镭望光学科技有限公司 | Modulation panel transmittance distribution generation method, modulation panel and lithography machine illumination system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6285443B1 (en) | Illuminating arrangement for a projection microlithographic apparatus | |
| Zimmermann et al. | Microlens laser beam homogenizer: from theory to application | |
| US4516832A (en) | Apparatus for transformation of a collimated beam into a source of _required shape and numerical aperture | |
| US8270084B2 (en) | Device for beam shaping | |
| US20140307245A1 (en) | Illumination optical assembly, exposure apparatus, and device manufacturing method | |
| CN103941549B (en) | A kind of optimal design micro reflector array produces the method for any lithographic illumination light source | |
| CN104198159B (en) | A kind of large-numerical aperture objective wave aberration detection means and method | |
| CN103149809B (en) | Off-axis illuminating device for photoetching machine equipment | |
| CN102436152B (en) | Deep-ultraviolet lithography illumination system | |
| US10353294B2 (en) | Illumination optical assembly, exposure device, and device manufacturing method | |
| JP2006065348A (en) | Method for shaping irradiance profile using optical element having positive and negative optical power | |
| EP2977816B1 (en) | Pupil shaping optical system for lithography machine and method for generating off-axis illumination modes | |
| CN105589300A (en) | Illuminating system for photoetching | |
| CN102253605A (en) | Multiple parallel laser beam grating direct writing device and grating direct writing method | |
| CN101916047A (en) | Photolithography exposure device for implementing off-axis illumination by using free-form surface lens | |
| CN103969832A (en) | Laser beam-expanding dodging device based on microlens array | |
| CN102338989A (en) | Parallel laser direct write device for prolonging focal depth | |
| CN114296245B (en) | Raman beam shaping device | |
| JP7023293B2 (en) | Laser irradiation system and manufacturing method of electronic devices | |
| CN101916045B (en) | Free-form surface lens for quadripole uniform illumination | |
| CN103926804B (en) | A kind of even smooth unit of chirp formula compound eye for deep-ultraviolet lithography illumination system | |
| CN104953465A (en) | Diode laser matrix beam uniformizing device based on spatial frequency spectrum segmentation process | |
| CN102023388A (en) | Array photon sieve light evener and manufacturing method thereof | |
| CN101408285B (en) | Illuminating apparatus generating continuous variable pupil | |
| Bich et al. | Multifunctional micro-optical elements for laser beam homogenizing and beam shaping |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160518 |
|
| WD01 | Invention patent application deemed withdrawn after publication |