CN105576039A - Preparation method of graphical thin film and thin film transistor - Google Patents
Preparation method of graphical thin film and thin film transistor Download PDFInfo
- Publication number
- CN105576039A CN105576039A CN201610098306.4A CN201610098306A CN105576039A CN 105576039 A CN105576039 A CN 105576039A CN 201610098306 A CN201610098306 A CN 201610098306A CN 105576039 A CN105576039 A CN 105576039A
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- graphical
- hydrophobic layer
- film
- preparation
- thin film
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- 239000010409 thin film Substances 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title claims abstract description 39
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 57
- 239000010408 film Substances 0.000 claims abstract description 52
- 239000002243 precursor Substances 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 238000001020 plasma etching Methods 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 15
- 239000012528 membrane Substances 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 10
- 229920002313 fluoropolymer Polymers 0.000 claims description 8
- 239000004811 fluoropolymer Substances 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000010422 painting Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 62
- 239000011248 coating agent Substances 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 11
- 239000002346 layers by function Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 9
- 238000007639 printing Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 2
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 235000011150 stannous chloride Nutrition 0.000 description 1
- 239000001119 stannous chloride Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
Abstract
The invention provides a preparation method of a graphical thin film and a thin film transistor. The preparation method of the graphical thin film comprises the following steps: (a) coating a primary body with a hydrophobic layer for forming a film; (b) carrying out plasma etching on the hydrophobic layer by using a mask plate to obtain a graphical hydrophobic layer; (c) coating the surface of the graphical hydrophobic layer with a thin film precursor solution, which is prepared in advance, to obtain an initial thin film coated structure; and (d) removing the hydrophobic layer in the initial thin film coated structure, and carrying out annealing treatment on a coated thin film to obtain the final graphical thin film. The preparation of the graphical thin film is carried out by adopting properties of the hydrophobic layer; and a preparation process is simple and convenient to operate, and is suitable for a flexible substrate. The thin film transistor provided by the invention adopts the graphical thin film to form one or more functional layers, and has the characteristics of simple preparation process and convenience for operation and the like, and is suitable for the flexible substrate.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of preparation method of graphical film and the preparation method of thin-film transistor.
Background technology
Thin-film transistor (TFT, ThinFilmTransistor) control and driving liquid crystal displays (LCD is mainly used in, LiquidCrystalDisplay), Organic Light Emitting Diode (OLED, OrganicLight-EmittingDiode) sub-pixel of display is one of most important electronic device in flat display field.
Along with the increase in demand of the electronic equipments such as smart mobile phone, display art also seems and becomes more and more important.Flexible display device has boundless application prospect due to bendability characteristics.Therefore, the large area preparation of flexible display device will be one of the threshold of its suitability for industrialized production following.Meanwhile, because of it, there is the advantages such as low cost, low energy consumption, format high throughput, compatible flexible substrate based on solution processing and the printed electronic device of paint-on technique also more and more to be paid attention to.Based on above-mentioned advantage, the large area that the printed electronic device of volume to volume (roll-to-roll) printing technology can solve flexible display prepares problem.And the pattern technology of thin-film transistor be applicable to thin-film transistor printing preparation, and then can compatible flexible display device volume to volume printing preparation, to flexible display technologies great significance.
In prior art, normally realized graphical by the alternate manner such as photoetching or liquid etch by the film of film forming in the preparation process of thin-film transistor, this processing mode preparation process is complicated, and cost is higher.Therefore, not enough for prior art, a kind of preparation method of graphical film is provided and the thin-film transistor prepared by the method very necessary to overcome prior art deficiency.
Summary of the invention
An object of the present invention is the preparation method providing a kind of graphical film, and this preparation method has that preparation is simple, the feature of flexible operation.
Above-mentioned purpose of the present invention is realized by following technological means.
A preparation method for graphical film, comprises the steps,
A () is coated with hydrophobic layer on first body to be filmed;
B () uses mask plate to carry out plasma etching to hydrophobic layer and obtains graphical hydrophobic layer;
C previously prepared thin film precursor solution coat in graphical hydrophobic layer surface, is obtained initial application membrane structure by ();
D hydrophobic layer in initial application membrane structure is removed by (), then carry out annealing in process to the film of coating and obtain final graphical film.
Above-mentioned hydrophobic layer is fluoropolymer hydrophobic layer.
Above-mentioned hydrophobic layer is by the hydrophobic fluoropolymer film that spin coating, rod are coated with or lift coating method obtains.
In above-mentioned steps (b), plasma etching adopts the plasma of oxygen or argon gas.
In above-mentioned steps (c), thin film precursor solution coats graphical hydrophobic layer surface by spin coating, rod painting or lift mode.
By the mode of heating, the hydrophobic layer in initial application membrane structure is removed in above-mentioned steps (d).
The heating-up temperature that hydrophobic layer in above-mentioned steps (d) in removal initial application membrane structure adopts is 95 ~ 110 DEG C.
Further, in above-mentioned steps (c), previously prepared thin film precursor solution is specially grid, insulating barrier, active layer or the source-drain electrode precursor solution in thin-film transistor, finally correspondingly obtains the graphical film as thin-film transistor gate, insulating barrier, active layer or source-drain electrode.
Another object of the present invention is to provide a kind of thin-film transistor, be provided with grid, active layer, insulating barrier and source electrode and drain electrode, at least one in insulating barrier, active layer, grid, source electrode and drain electrode is the graphical film prepared by the preparation method of above-mentioned graphical film.
Further, above-mentioned thin-film transistor is contact-type at the bottom of bottom gate contact-type, bottom gate top contact type, top grid or top grid top contact type.
The preparation method of graphical film of the present invention, comprises the steps, (a) is coated with hydrophobic layer on first body to be filmed; B () uses mask plate to carry out plasma etching to hydrophobic layer and obtains graphical hydrophobic layer; C previously prepared thin film precursor solution coat in graphical hydrophobic layer surface, is obtained initial application membrane structure by (); D hydrophobic layer in initial application membrane structure is removed by (), then carry out annealing in process to the film of coating and obtain final graphical film.The present invention adopts the characteristic of hydrophobic layer to carry out graphical film preparation, and preparation technology is simple, easy to operate, is suitable for flexible substrate.
Thin-film transistor of the present invention, adopts above-mentioned graphical film to form its one or more functional layer, has preparation technology simple, easy to operate, is suitable for the feature of flexible substrate.
Accompanying drawing explanation
The present invention is further illustrated to utilize accompanying drawing, but the content in accompanying drawing does not form any limitation of the invention.
Fig. 1 is the structural representation of the thin-film transistor that the embodiment of the present invention 2 is prepared;
Fig. 2 is the flow chart that the embodiment of the present invention 2 prepares Film patterning embodiment;
Fig. 3 is the output characteristic curve of the thin-film transistor that the embodiment of the present invention 2 is prepared;
Fig. 4 is the transfer characteristic curve of the thin-film transistor that the embodiment of the present invention 2 is prepared.
Embodiment
Below in conjunction with accompanying drawing and example, the present invention is further illustrated, but the scope of protection of present invention is not limited to the scope of embodiment.
embodiment 1.
A preparation method for graphical film, comprises the following steps.
A () is coated with hydrophobic layer on first body to be filmed.Concrete, hydrophobic layer is fluoropolymer hydrophobic layer, and it can be the hydrophobic fluoropolymer film obtained by coating methods such as spin coating, rod painting or lifts.
B () uses mask plate to carry out plasma etching to hydrophobic layer and obtains graphical hydrophobic layer, the part that graphical hydrophobic layer exposes is the figure of needs, and the region of exposing is hydrophilic region.Wherein, plasma etching can adopt other plasma such as oxygen or argon gas to etch.
C previously prepared thin film precursor solution is coated graphical hydrophobic layer surface by modes such as spin coating, rod painting or lifts by (), obtain initial application membrane structure.Owing to being hydrophilic region by the part of plasma etching, and the part that hydrophobic layer covers is hydrophobic region, and thin film precursor solution will only be attached to the graphics field etched selectively.
D hydrophobic layer in initial application membrane structure is removed by (), then carry out annealing in process to the film of coating and obtain final graphical film.Hydrophobic layer in initial application membrane structure removes by the mode especially by heating, and heating-up temperature is 95 ~ 110 DEG C.In heat treatment, because the glass transition temperature of hydrophobic layer film is lower, be about about 108 DEG C, will vaporize or decompose in heating process, finally only leave the graphical film of needs.
The preparation method of graphical film of the present invention is suitable for grid, gate insulator, active layer, the source-drain electrode of preparing thin-film transistor, as long as the precursor solution in corresponding set-up procedure (c), just finally correspondence the graphical film as grid, gate insulator, source-drain electrode, active layer can be obtained.
It should be noted that, first body to be filmed in the present embodiment step (a) is that the structure accurately preparing respective graphical film is thereon referred to as, the part that its correspondence is specifically to be filmed.During as prepared grid, first body is glass substrate or other substrate.When preparing active layer, first body may for having the substrate of grid, gate insulator.For different graphical film objects, corresponding just body is determined flexibly according to real needs, does not repeat one by one at this.
The present invention adopts the characteristic of hydrophobic layer to carry out graphical film preparation, and preparation technology is simple, easy to operate, is suitable for flexible substrate, prepares significant to the printing of thin-film transistor.By preparing each layer successively, can obtain the thin-film transistor of Structure of need, method of the present invention is applicable to preparing each layer film in contact-type at the bottom of bottom gate contact-type, bottom gate top contact type, top grid or top grid top contact type thin-film transistor.
embodiment 2.
The thin-film transistor of the present embodiment is contact structures at the bottom of bottom gate, as shown in Figure 1.Wherein insulating barrier 2 is oxidized by the grid 1 in glass substrate 6 to be formed, and active layer 5, source class 3 and drain electrode 4 all use the graphical method for manufacturing thin film described in the embodiment of the present invention 1 to be prepared from.Wherein, insulating barrier 2 is by AlO
xlayer and Nd is stacked establishes formation.Grid 1 is made up of Al layer and stacked the establishing of Nd.
The preparation process of this thin-film transistor is as follows: the precursor solution of previously prepared active layer and source-drain electrode.Specifically, measure 10mL glycol monoethyl ether, add 0.19g indium nitrate, 0.15g zinc nitrate, drip 60 μ L monoethanolamine stirring and dissolving, obtain the active layer precursor solution of indium-zinc oxide (IZO).Measure 10mL glycol monoethyl ether, add 0.17g indium nitrate, 0.0113g stannous chloride, drip 60 μ L monoethanolamine stirring and dissolving, obtain the source-drain electrode precursor solution of indium tin oxide (ITO).
Then, as shown in Figure 2:
A () is by CYTOP(fluoropolymer) solution is coated in AlO through even glue technology
x: Nd/Al:Nd substrate forms wet film, and coating rotating speed is 2200rpm, and coating time is 20s, is heated 30 minutes by coated wet film at 100 DEG C, forms hydrophobic layer 7;
B overall structure that step (a) is prepared by () is placed in source-drain electrode mask plate 8, carries out oxygen gas plasma process to hydrophobic layer, etches required source-drain electrode pattern;
(c) coating ITO source-drain electrode precursor solution 9;
D () carries out heat treated at 100 DEG C, removing CYTOP hydrophobic layer, then carries out annealing in process and obtain the source-drain electrode of the graphical sull 10 of finished product as thin-film transistor;
E fluoropolymer solutions is coated in step (d) through even glue technology and prepares in ITO electrode and form wet film by () again, coating rotating speed is 2200rpm, and coating time is 20s, is then heated 30 minutes at 100 DEG C by wet film, forms hydrophobic layer;
F the structural entity of step (e) is placed in active layer mask plate by (), carry out oxygen gas plasma process to hydrophobic layer, etches required active layer pattern;
G () be indium coating zinc oxide precursor solution 11 in the structure of step (f);
H () carries out heat treated to the structure that step (g) obtains, removing hydrophobic layer, the more annealed patterned oxide thing film 12 that obtains is as active layer.
Finally obtain contact-type oxide thin film transistor at the bottom of complete bottom gate.
Fig. 3,4 respectively illustrates and tests to the TFT of the present embodiment the output characteristic and transfer characteristic curve that obtain.As can be seen from transfer curve, not quite, namely the sluggishness of transfer characteristic curve is less just to sweep difference between curve and flyback curve, illustrates that the contact of active layer and source-drain electrode is good, proves the reliability of graphic method of the present invention further.
The present invention adopts the characteristic of hydrophobic layer to carry out graphical film preparation, by preparing each layer successively, can obtain the thin-film transistor of Structure of need, having the advantages that technique is simple, with low cost.
It should be noted that, method of the present invention is applicable to preparing each layer film in contact-type at the bottom of bottom gate contact-type, bottom gate top contact type, top grid or top grid top contact type thin-film transistor, and this is no longer going to repeat them.
Finally should be noted that; above embodiment is only in order to illustrate technical scheme of the present invention but not limiting the scope of the invention; although be explained in detail the present invention with reference to preferred embodiment; those of ordinary skill in the art is to be understood that; can modify to technical scheme of the present invention or equivalent replacement, and not depart from essence and the scope of technical solution of the present invention.
Claims (10)
1. a preparation method for graphical film, is characterized in that: comprise the steps, (a) is coated with hydrophobic layer on first body to be filmed; B () uses mask plate to carry out plasma etching to hydrophobic layer and obtains graphical hydrophobic layer; C previously prepared thin film precursor solution coat in graphical hydrophobic layer surface, is obtained initial application membrane structure (d) and is removed by the hydrophobic layer in initial application membrane structure, then carry out annealing in process and obtain final graphical film by ().
2. the preparation method of graphical film according to claim 1, is characterized in that: described hydrophobic layer is fluoropolymer hydrophobic layer.
3. the preparation method of graphical film according to claim 2, is characterized in that: described hydrophobic layer is by the hydrophobic fluoropolymer film that spin coating, rod are coated with or lift coating method obtains.
4. the preparation method of graphical film according to claim 3, is characterized in that: in described step (b), plasma etching adopts the plasma of oxygen or argon gas to carry out etching.
5. the preparation method of graphical film according to claim 4, is characterized in that: in described step (c), thin film precursor solution coats graphical hydrophobic layer surface by spin coating, rod painting or lift mode.
6. the preparation method of graphical film according to claim 5, is characterized in that: removed by the hydrophobic layer in initial application membrane structure by mode of heating in described step (d).
7. the preparation method of graphical film according to claim 6, is characterized in that: the heating-up temperature that the hydrophobic layer in described step (d) in removal initial application membrane structure adopts is 95 ~ 110 DEG C.
8. the preparation method of the graphical film according to claim 1 to 7 any one, it is characterized in that: in described step (c), previously prepared thin film precursor solution is specially grid, insulating barrier, active layer or the source-drain electrode precursor solution in thin-film transistor, finally correspondingly obtain the graphical film as thin-film transistor gate, insulating barrier, active layer or source-drain electrode.
9. a thin-film transistor, be provided with grid, active layer, insulating barrier and source electrode and drain electrode, it is characterized in that: at least one in insulating barrier, active layer, grid, source electrode and drain electrode is the graphical film prepared by the preparation method of the graphical film of claim 1 to 8 any one.
10. thin-film transistor according to claim 9, is characterized in that: described thin-film transistor is contact-type at the bottom of bottom gate contact-type, bottom gate top contact type, top grid or top grid top contact type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610098306.4A CN105576039A (en) | 2016-02-23 | 2016-02-23 | Preparation method of graphical thin film and thin film transistor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610098306.4A CN105576039A (en) | 2016-02-23 | 2016-02-23 | Preparation method of graphical thin film and thin film transistor |
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| CN201610098306.4A Pending CN105576039A (en) | 2016-02-23 | 2016-02-23 | Preparation method of graphical thin film and thin film transistor |
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Application publication date: 20160511 |
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| RJ01 | Rejection of invention patent application after publication |