CN105575944A - Hybrid interconnection structure, manufacturing method thereof, and electronic device comprising hybrid interconnection structure - Google Patents
Hybrid interconnection structure, manufacturing method thereof, and electronic device comprising hybrid interconnection structure Download PDFInfo
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- CN105575944A CN105575944A CN201410537822.3A CN201410537822A CN105575944A CN 105575944 A CN105575944 A CN 105575944A CN 201410537822 A CN201410537822 A CN 201410537822A CN 105575944 A CN105575944 A CN 105575944A
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- interconnection structure
- interlayer dielectric
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Abstract
The invention provides a hybrid interconnection structure, a manufacturing method thereof, and an electronic device comprising the hybrid interconnection structure. The manufacturing method comprises the steps of providing a semiconductor substrate; forming a first interlayer dielectric layer on the semiconductor substrate; and respectively forming an aluminum interconnection wire and a copper interconnection wire in the first interlayer dielectric layer, wherein the aluminum interconnection wire is used as a signal wire and the copper interconnection wire is used as a power wire. Compared with a pure copper interconnection structure, the hybrid interconnection structure is advantageous in that the hybrid interconnection structure integrally has relatively low resistance; furthermore electromigration reliability does not reduce; and the hybrid interconnection structure is suitable for a semiconductor process dimension which reduces gradually.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to one mixing interconnection structure and manufacture method, electronic installation.
Background technology
In semiconductor integrated circuit, the Signal transmissions between semiconductor device needs highdensity metal interconnecting wires.Traditional metal interconnectedly to be realized by aluminium, but along with the development of semiconductor technology, traditional aluminium interconnection technique gradually replace by copper interconnection technology.Along with the size of cmos device in integrated circuit narrows down to 14nm and following, the RC in copper interconnection technology postpones to become the key factor that restriction performance of integrated circuits improves further, and it has attracted increasing concern.Wherein, resistance R greatly depends on crystallite dimension and intrinsic resistance.It is expected that, dimensional effect, comprise surface and crystal boundary scattering, will the effective resistivity of copper interconnection structure be increased considerably.In addition, diffusion impervious layer is the conductor of non-constant, and the mark of the metal wire volume shared by it is also increasing.
Therefore, for solving the problem, be necessary the manufacture method of the interconnection structure proposing a kind of improvement.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of mixing interconnection structure and manufacture method, electronic installation, this interconnection structure has lower resistance and good electromigration reliability.
According to an aspect of the present invention, provide a kind of manufacture method mixing interconnection structure, described method comprises: provide Semiconductor substrate; Form the first interlayer dielectric layer on the semiconductor substrate; And aluminum interconnecting and copper interconnecting line is formed respectively in described first interlayer dielectric layer, wherein, described aluminum interconnecting is used as holding wire, and described copper interconnecting line is used as power line.
Alternatively, described first interlayer dielectric layer forms aluminum interconnecting respectively and copper interconnecting line comprises: etch described first interlayer dielectric layer, to form copper-connection through hole and aluminium through-hole interconnection in described first interlayer dielectric layer; Aluminum metal layer in described copper-connection through hole and described aluminium through-hole interconnection and on described first interlayer dielectric layer; Etch described aluminum metal layer, to form described aluminum interconnecting; Deposition of sacrificial layer on described first interlayer dielectric layer and described aluminum interconnecting; Etch described sacrifice layer, to form copper interconnection groove in described sacrifice layer; Deposited copper metal layer in described copper interconnection groove, to form copper interconnecting line; And remove described sacrifice layer, to expose described copper interconnecting line and described aluminum interconnecting.
Alternatively, described method comprises further: after the described sacrifice layer of removing, at top and the side wall deposition diffusion impervious layer of described copper interconnecting line and described aluminum interconnecting.
Alternatively, the material of described diffusion impervious layer is Graphene.
Alternatively, laser writing technology is adopted to deposit described diffusion impervious layer.
Alternatively, described method comprises further: after the described diffusion impervious layer of deposition, described diffusion impervious layer deposits the second interlayer dielectric layer.
According to a further aspect in the invention, a kind of mixing interconnection structure manufactured according to said method is provided.
According to another aspect of the invention, provide a kind of electronic installation, comprise the described mixing interconnection structure manufactured according to said method.
According to the manufacture method of mixing interconnection structure provided by the invention, using aluminum interconnecting as holding wire, using copper interconnecting line as power line.Due to holding wire conduction is bidirectional current, and it by the impact of electromigration effect, therefore can not adopt the aluminium interconnection structure that deelectric transferred performance is poor.And aluminium interconnection structure does not need to add diffusion impervious layer, therefore can reduce the volume of interconnection line under nano-scale dimension, thus reduce the resistance of interconnection structure.What power line conducted is unidirectional current (direct current), and its impact by electromigration effect is comparatively large, therefore using the good copper interconnection structure of deelectric transferred performance as power line.Compared with simple copper interconnection structure, this mixing interconnection structure has lower resistance on the whole, and electromigration reliability does not also decline simultaneously, and it goes for more and more less semiconductor processing dimensions.
Accompanying drawing explanation
Following accompanying drawing of the present invention in this as a part of the present invention for understanding the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining principle of the present invention.
In accompanying drawing:
Fig. 1 a to Fig. 1 i illustrates the generalized section mixing the semiconductor device obtained in the committed step of the manufacture method of interconnection structure according to an embodiment of the invention; And
Fig. 2 illustrates the flow chart of the manufacture method of the mixing interconnection structure according to the embodiment of the present invention.
Embodiment
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.But, it is obvious to the skilled person that the present invention can be implemented without the need to these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
In order to thoroughly understand the present invention, by following description, detailed step is proposed, to explain the manufacture method of the mixing interconnection structure that the present invention proposes.Obviously, the specific details that the technical staff that execution of the present invention is not limited to semiconductor applications has the knack of.Preferred embodiment of the present invention is described in detail as follows, but except these are described in detail, the present invention can also have other execution modes.
Should be understood that, " comprise " when using term in this manual and/or " comprising " time, it indicates exists described feature, entirety, step, operation, element and/or assembly, but does not get rid of existence or additional other features one or more, entirety, step, operation, element, assembly and/or their combination.
Be understood that, when element or layer be called as " ... on ", " with ... adjacent ", " being connected to " or " being coupled to " other element or layer time, its can directly on other element or layer, with it adjacent, connect or be coupled to other element or layer, or the element that can exist between two parties or layer.On the contrary, when element be called as " directly exist ... on ", " with ... direct neighbor ", " being directly connected to " or " being directly coupled to " other element or layer time, then there is not element between two parties or layer.
Embodiment one
Fig. 1 a to Fig. 1 i illustrates the generalized section mixing the semiconductor device obtained in the committed step of the manufacture method of interconnection structure according to an embodiment of the invention.Existing composition graphs 1a to Fig. 1 f describes the manufacture method of mixing interconnection structure provided by the present invention in detail.
With reference to figure 1a, provide Semiconductor substrate 101.The constituent material of described Semiconductor substrate 101 can adopt unadulterated monocrystalline silicon, monocrystalline silicon, silicon-on-insulator (SOI) etc. doped with impurity.Isolation channel, buried regions, various trap (well) structure or lower interconnect structure can be formed in described Semiconductor substrate 101, in order to simplify, be omitted in diagram.
Continue with reference to figure 1a, described Semiconductor substrate 101 is formed the first interlayer dielectric layer 102.Described first interlayer dielectric layer 102 can be low k or ultra-low-k dielectric layer, and its material can be such as silicon oxide carbide (SiOC).
Afterwards, described method comprises: on described first interlayer dielectric layer 102, form aluminum interconnecting and copper interconnecting line respectively, and wherein, described aluminum interconnecting is used as holding wire, and described copper interconnecting line is used as power line.It will be understood by those skilled in the art that " power line " described herein can comprise earth connection.Due to holding wire conduction is bidirectional current, and it by the impact of electromigration effect, therefore can not adopt the aluminium interconnection structure that deelectric transferred performance is poor.And aluminium interconnection structure does not need to add diffusion impervious layer, therefore can reduce the volume of interconnection line under nano-scale dimension, thus reduce the resistance of interconnection structure.What power line conducted is unidirectional current (direct current), and its impact by electromigration effect is comparatively large, therefore using the good copper interconnection structure of deelectric transferred performance as power line.Compared with simple copper interconnection structure, this mixing interconnection structure has lower resistance on the whole, and electromigration reliability does not also decline simultaneously, and it goes for more and more less semiconductor processing dimensions.This step specifically comprises the steps.
With reference to figure 1b, etch described first interlayer dielectric layer 102, to form copper-connection through hole 104 and aluminium through-hole interconnection 103 in described first interlayer dielectric layer 102.Described etching can be dry etch process, and the etching gas used can comprise fluoro-gas (CF
4, CHF
3, CH
2f
2deng), diluent gas (He, N
2deng) and oxygen.
With reference to figure 1c, aluminum metal layer 105 in described copper-connection through hole 104 and described aluminium through-hole interconnection 103 and on described first interlayer dielectric layer 102.The deposition of described aluminum metal layer 105 can adopt flowable al deposition process deposits.Amber metal deposition technique specifically can be adopted to realize.It carrys out depositing metal layers by optionally physical vaporous deposition, makes at the bottom deposit of groove and/or the through hole metal thicker than its top.This can be avoided the top of groove and/or through hole to be blocked by metal in deposition process, causes leaving cavity in the below of groove and/or through hole.Afterwards in the process of backflow, because capillary effect makes metal fill from the bottom of groove and/or through hole to top-direction, zero defect therefore can be realized, without empty filling.The vertical wide ratio of groove and/or through hole is larger, and filling effect is better.Therefore, described Amber metal deposition technique can adapt to the vertical wide ratio of more and more less dimensions of semiconductor devices and thereupon increasing interconnection line.
With reference to figure 1d, etch described aluminum metal layer 105, to form aluminum interconnecting 106.The mode of subraction graphical (subtractivepatterning) can be adopted herein to etch described aluminum metal layer 105.Crystal grain in the metal interconnect structure adopting subraction graphically to obtain is larger, and therefore electron scattering effect is little, and resistivity is also smaller.
With reference to figure 1e, deposition of sacrificial layer 107 on described first interlayer dielectric layer 102 and described aluminum interconnecting 106.Sacrifice layer 107 can be siliceous bottom anti-reflection layer (Si-BARC) or ultra-deep oxide skin(coating) (DeepUltraOxidation, DUO) etc.
With reference to figure 1f, etch described sacrifice layer 107, to form copper interconnection groove 108 in described sacrifice layer 107.Copper interconnection groove 108 can define the position of copper interconnecting line.
With reference to figure 1g, deposited copper metal layer in described copper interconnection groove 108, to form copper interconnecting line 110.It will be understood by those skilled in the art that method may further include the step of described copper metal layer being carried out to cmp, does not repeat them here after the described copper metal layer of deposition.According to one embodiment of present invention, the deposition of described copper metal layer can adopt flowable copper deposition process to deposit.Specifically can adopt Amber metal deposition technique as above, not repeat them here.
Continue with reference to figure 1g, remove described sacrifice layer 107, to expose described copper interconnecting line 109 and described aluminum interconnecting 106.
Alternatively, described method may further include: after the described sacrifice layer 107 of removing, at top and the side wall deposition diffusion impervious layer of described copper interconnecting line 109 and described aluminum interconnecting 106.With reference to figure 1h, described diffusion impervious layer is depicted as diffusion impervious layer 110.In one embodiment, the material of described diffusion impervious layer is Graphene.Adopt Graphene as the diffusion impervious layer of copper interconnection structure, the oxidation of copper metal and the diffusion into the surface of copper ion can be reduced, therefore can improve the electro migration resistance of interconnection structure.In one embodiment, laser writing technology can be adopted to deposit and describedly can reduce the oxidation of copper metal and the diffusion into the surface of copper ion, therefore can improve the electro migration resistance layer 110 of interconnection structure.
Alternatively, described method may further include: after the described diffusion impervious layer 110 of deposition, described diffusion impervious layer 110 deposits the second interlayer dielectric layer.As shown in figure 1i, described second interlayer dielectric layer is depicted as the second interlayer dielectric layer 111.The material of described second interlayer dielectric layer 111 can be such as silica etc.
Fig. 2 illustrates the flow chart of the manufacture method 200 of the mixing interconnection structure according to the embodiment of the present invention.As shown in Figure 2, described method 200 comprises:
Step S201: Semiconductor substrate is provided.
Step S202: form the first interlayer dielectric layer on the semiconductor substrate.
Step S203: form aluminum interconnecting and copper interconnecting line respectively on described first interlayer dielectric layer, wherein, described aluminum interconnecting is used as holding wire, and described copper interconnecting line is used as power line.
According to the manufacture method of mixing interconnection structure provided by the invention, using aluminum interconnecting as holding wire, using copper interconnecting line as power line.Compared with simple copper interconnection structure, this mixing interconnection structure has lower resistance on the whole, and electromigration reliability does not also decline simultaneously, and it goes for more and more less semiconductor processing dimensions.
Embodiment two
Present invention also offers a kind of mixing interconnection structure, described mixing interconnection structure selects the method manufacture described in above-described embodiment.According to mixing interconnection structure provided by the invention, using aluminum interconnecting as holding wire, using copper interconnecting line as power line.Compared with simple copper interconnection structure, this mixing interconnection structure has lower resistance on the whole, and electromigration reliability does not also decline simultaneously, and it goes for more and more less semiconductor processing dimensions.
Embodiment three
Present invention also offers a kind of electronic installation, comprise the mixing interconnection structure described in embodiment two.Wherein, mixing interconnection structure is the mixing interconnection structure described in embodiment two, or the mixing interconnection structure that the manufacture method according to embodiment one obtains.
The electronic installation of the present embodiment, can be mobile phone, panel computer, notebook computer, net book, game machine, television set, VCD, DVD, navigator, camera, video camera, recording pen, any electronic product such as MP3, MP4, PSP or equipment, also can be any intermediate products comprising described mixing interconnection structure.The electronic installation of the embodiment of the present invention, owing to employing above-mentioned mixing interconnection structure, thus has better performance.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.
Claims (8)
1. mix a manufacture method for interconnection structure, comprising:
Semiconductor substrate is provided;
Form the first interlayer dielectric layer on the semiconductor substrate; And
Described first interlayer dielectric layer forms aluminum interconnecting and copper interconnecting line respectively, and wherein, described aluminum interconnecting is used as holding wire, and described copper interconnecting line is used as power line.
2. method according to claim 1, is characterized in that, described first interlayer dielectric layer forms aluminum interconnecting respectively and copper interconnecting line comprises:
Etch described first interlayer dielectric layer, to form copper-connection through hole and aluminium through-hole interconnection in described first interlayer dielectric layer;
Aluminum metal layer in described copper-connection through hole and described aluminium through-hole interconnection and on described first interlayer dielectric layer;
Etch described aluminum metal layer, to form described aluminum interconnecting;
Deposition of sacrificial layer on described first interlayer dielectric layer and described aluminum interconnecting;
Etch described sacrifice layer, to form copper interconnection groove in described sacrifice layer;
Deposited copper metal layer in described copper interconnection groove, to form copper interconnecting line; And
Remove described sacrifice layer, to expose described copper interconnecting line and described aluminum interconnecting.
3. method according to claim 2, is characterized in that, described method comprises further:
After the described sacrifice layer of removing, at top and the side wall deposition diffusion impervious layer of described copper interconnecting line and described aluminum interconnecting.
4. method according to claim 3, is characterized in that, the material of described diffusion impervious layer is Graphene.
5. method according to claim 3, is characterized in that, adopts laser writing technology to deposit described diffusion impervious layer.
6. method according to claim 3, is characterized in that, described method comprises further: after the described diffusion impervious layer of deposition, described diffusion impervious layer deposits the second interlayer dielectric layer.
7. the mixing interconnection structure manufactured according to the manufacture method one of claim 1-6 Suo Shu.
8. an electronic installation, comprises mixing interconnection structure according to claim 7.
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Cited By (1)
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| CN106025033A (en) * | 2016-06-30 | 2016-10-12 | 大连德豪光电科技有限公司 | LED flip chip and preparation method thereof |
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| US7199472B2 (en) * | 2002-09-20 | 2007-04-03 | Hitachi, Ltd. | Semiconductor device |
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| US7199472B2 (en) * | 2002-09-20 | 2007-04-03 | Hitachi, Ltd. | Semiconductor device |
| CN1815728A (en) * | 2005-01-14 | 2006-08-09 | 恩益禧电子股份有限公司 | Semiconductor device, and method for manufacturing the same |
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