CN105575782A - Method of improving ultraviolet curing uniformity - Google Patents
Method of improving ultraviolet curing uniformity Download PDFInfo
- Publication number
- CN105575782A CN105575782A CN201610107411.XA CN201610107411A CN105575782A CN 105575782 A CN105575782 A CN 105575782A CN 201610107411 A CN201610107411 A CN 201610107411A CN 105575782 A CN105575782 A CN 105575782A
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- Prior art keywords
- barrier layer
- ultraviolet lamp
- wafer
- ultraviolet
- ultraviolet light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Abstract
The invention provides a method of improving ultraviolet curing uniformity. The method comprises steps: an ultraviolet lamp is arranged right above a wafer; a light transmission glass layer is arranged on a light path from the ultraviolet lamp to the wafer; one side, close to the ultraviolet lamp, of the light transmission glass layer is provided with a barrier layer to enable the ultraviolet light emitted by the ultraviolet lamp to arrive at the wafer sequentially through the barrier layer and the light transmission glass layer, wherein the light transmission performance of the barrier layer is gradually enhanced from the center to the edge; and the ultraviolet lamp is turned on, and in a condition in which the ultraviolet lamp rotates on a plane parallel to the wafer surface, the ultraviolet light emitted by the ultraviolet lamp is used for irradiating on the wafer surface to carry out curing treatment on the wafer.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of method improving ultraviolet light polymerization uniformity.
Background technology
For UV curing process, due to current process tool structure problem, be rotation always in ultraviolet light polymerization processing procedure; When the fixing processing time, time of the actual ultraviolet light polymerization of crystal column surface along with from center to edge, reduce along with the increase of radius.Thus cause central area to there is over-curing, contraction (shrinkage) is higher, and crystal round fringes curing time on the low side, shrink problem on the low side.The uneven of wafer overall shrinkage causes, and causes the etch rate of subsequent technique and cmp to remove speed and there is gap in the zones of different of wafer, the more difficult control of subsequent treatment, and the deviation range of the RC/RS of final WAT test is bigger than normal.
Summary of the invention
Technical problem to be solved by this invention is for there is above-mentioned defect in prior art, provides a kind of method that can improve ultraviolet light polymerization uniformity.
In order to realize above-mentioned technical purpose, according to the present invention, providing a kind of method improving ultraviolet light polymerization uniformity, comprising:
First step: arrange ultraviolet lamp directly over wafer;
Second step: arrange translucent glass layer in the light path of ultraviolet lamp to wafer;
Third step: in the side barrier layer disposed of the close ultraviolet lamp of translucent glass layer, makes the ultraviolet light sent from ultraviolet lamp arrive wafer by barrier layer and translucent glass layer successively; Wherein, the light transmission on barrier layer is strengthened to edge gradual change gradually by center;
4th step: open ultraviolet lamp, and when making ultraviolet lamp rotate in the plane being parallel to crystal column surface, the UV-irradiation crystal column surface utilizing ultraviolet lamp to send, to be cured process to wafer.
Preferably, barrier layer is semi permeability barrier layer.
Preferably, barrier layer is thickness by center to the thin thin layer of edge gradual change.
Preferably, barrier layer is changed by material composition and makes the flatness layer that light transmission is strengthened to edge gradual change gradually by center.
According to the present invention, additionally provide a kind of method improving ultraviolet light polymerization uniformity, it comprises:
First step: arrange ultraviolet lamp directly over wafer;
Second step: arrange translucent glass layer in the light path of ultraviolet lamp to wafer;
Third step: in the side barrier layer disposed of the close wafer of translucent glass layer, makes the ultraviolet light sent from ultraviolet lamp arrive wafer by translucent glass layer and barrier layer successively; Wherein, the light transmission on barrier layer is strengthened to edge gradual change gradually by center;
4th step: open ultraviolet lamp, and when making ultraviolet lamp rotate in the plane being parallel to crystal column surface, the UV-irradiation crystal column surface utilizing ultraviolet lamp to send, to be cured process to wafer.
Preferably, barrier layer is semi permeability barrier layer.
Preferably, barrier layer is thickness by center to the thin thin layer of edge gradual change.
Preferably, barrier layer is changed by material composition and makes the flatness layer that light transmission is strengthened to edge gradual change gradually by center.
The present invention is adjusted the intensity of ultraviolet light zones of different in cavity to the semi permeability barrier layer of (light transmission strengthens gradually) of edge gradual change by center by utilizing, thus the impact that the reduction ultraviolet light polymerization time is different, improve the uniformity of wafer ultraviolet light polymerization entirety.The invention has the advantages that the uniformity that improve wafer ultraviolet light polymerization.
Accompanying drawing explanation
By reference to the accompanying drawings, and by reference to detailed description below, will more easily there is more complete understanding to the present invention and more easily understand its adjoint advantage and feature, wherein:
Fig. 1 schematically shows the schematic diagram of the method for the raising ultraviolet light polymerization uniformity according to first preferred embodiment of the invention.
Fig. 2 schematically shows the schematic diagram of the method for the raising ultraviolet light polymerization uniformity according to second preferred embodiment of the invention.
It should be noted that, accompanying drawing is for illustration of the present invention, and unrestricted the present invention.Note, represent that the accompanying drawing of structure may not be draw in proportion.Further, in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention clearly with understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
Fig. 1 schematically shows the schematic diagram of the method for the raising ultraviolet light polymerization uniformity according to first preferred embodiment of the invention.
As shown in Figure 1, comprise according to the method for the raising ultraviolet light polymerization uniformity of first preferred embodiment of the invention:
First step S1: arrange ultraviolet lamp 400 directly over wafer 100;
Second step S2: arrange translucent glass layer 200 in the light path of ultraviolet lamp 400 to wafer 100;
Third step S3: in the side barrier layer disposed 300 of the close ultraviolet lamp 400 of translucent glass layer 200, makes the ultraviolet light sent from ultraviolet lamp 400 arrive wafer 100 by barrier layer 300 and translucent glass layer 200 successively; Wherein, the light transmission on barrier layer 300 is strengthened to edge gradual change gradually by center;
4th step S4: open ultraviolet lamp 400, and when making ultraviolet lamp 400 rotate in the plane being parallel to wafer 100 surface, UV-irradiation wafer 100 surface utilizing ultraviolet lamp 400 to send, to be cured process to wafer 100.
Preferably, barrier layer 300 is semi permeability barrier layers.Preferably, barrier layer 300 is thickness by center to the thin thin layer of edge gradual change.Or barrier layer 300 is changed by material composition and makes the flatness layer that light transmission is strengthened to edge gradual change gradually by center.
Fig. 2 schematically shows the schematic diagram of the method for the raising ultraviolet light polymerization uniformity according to second preferred embodiment of the invention.
As shown in Figure 2, comprise according to the method for the raising ultraviolet light polymerization uniformity of second preferred embodiment of the invention:
First step S1: arrange ultraviolet lamp 400 directly over wafer 100;
Second step S2: arrange translucent glass layer 200 in the light path of ultraviolet lamp 400 to wafer 100;
Third step S3: in the side barrier layer disposed 300 of the close wafer 100 of translucent glass layer 200, makes the ultraviolet light sent from ultraviolet lamp 400 arrive wafer 100 by translucent glass layer 200 and barrier layer 300 successively; Wherein, the light transmission on barrier layer 300 is strengthened to edge gradual change gradually by center;
4th step S4: open ultraviolet lamp 400, and when making ultraviolet lamp 400 rotate in the plane being parallel to wafer 100 surface, UV-irradiation wafer 100 surface utilizing ultraviolet lamp 400 to send, to be cured process to wafer 100.
Preferably, barrier layer 300 is semi permeability barrier layers.Preferably, as depicted in figs. 1 and 2, barrier layer 300 is thickness by center to the thin thin layer of edge gradual change.Or barrier layer 300 is changed by material composition and makes the flatness layer that light transmission is strengthened to edge gradual change gradually by center.
The present invention utilizes by center to the semi permeability barrier layer of (light transmission strengthens gradually) of edge gradual change to reduce the different impact of actual ultraviolet light polymerization time, finally reach and reduce the difference of crystal circle center to crystal round fringes, improve the uniformity of the overall ultraviolet light polymerization of wafer.
In addition, it should be noted that, unless stated otherwise or point out, otherwise the term " first " in specification, " second ", " the 3rd " etc. describe only for distinguishing each assembly, element, step etc. in specification, instead of for representing logical relation between each assembly, element, step or ordinal relation etc.
Be understandable that, although the present invention with preferred embodiment disclose as above, but above-described embodiment and be not used to limit the present invention.For any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the technology contents of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (10)
1. improve a method for ultraviolet light polymerization uniformity, it is characterized in that comprising:
First step: arrange ultraviolet lamp directly over wafer;
Second step: arrange translucent glass layer in the light path of ultraviolet lamp to wafer;
Third step: in the side barrier layer disposed of the close ultraviolet lamp of translucent glass layer, makes the ultraviolet light sent from ultraviolet lamp arrive wafer by barrier layer and translucent glass layer successively; Wherein, the light transmission on barrier layer is strengthened to edge gradual change gradually by center.
2. the method for raising ultraviolet light polymerization uniformity according to claim 1, characterized by further comprising:
4th step: open ultraviolet lamp, and when making ultraviolet lamp rotate in the plane being parallel to crystal column surface, the UV-irradiation crystal column surface utilizing ultraviolet lamp to send, to be cured process to wafer.
3. the method for raising ultraviolet light polymerization uniformity according to claim 1 and 2, is characterized in that, barrier layer is semi permeability barrier layer.
4. the method for raising ultraviolet light polymerization uniformity according to claim 1 and 2, is characterized in that, barrier layer is thickness by center to the thin thin layer of edge gradual change.
5. the method for raising ultraviolet light polymerization uniformity according to claim 1 and 2, it is characterized in that, barrier layer is changed by material composition and makes the flatness layer that light transmission is strengthened to edge gradual change gradually by center.
6. improve a method for ultraviolet light polymerization uniformity, it is characterized in that comprising:
First step: arrange ultraviolet lamp directly over wafer;
Second step: arrange translucent glass layer in the light path of ultraviolet lamp to wafer;
Third step: in the side barrier layer disposed of the close wafer of translucent glass layer, makes the ultraviolet light sent from ultraviolet lamp arrive wafer by translucent glass layer and barrier layer successively; Wherein, the light transmission on barrier layer is strengthened to edge gradual change gradually by center.
7. the method for raising ultraviolet light polymerization uniformity according to claim 6, characterized by further comprising:
4th step: open ultraviolet lamp, and when making ultraviolet lamp rotate in the plane being parallel to crystal column surface, the UV-irradiation crystal column surface utilizing ultraviolet lamp to send, to be cured process to wafer.
8. the method for the raising ultraviolet light polymerization uniformity according to claim 6 or 7, is characterized in that, barrier layer is semi permeability barrier layer.
9. the method for the raising ultraviolet light polymerization uniformity according to claim 6 or 7, is characterized in that, barrier layer is thickness by center to the thin thin layer of edge gradual change.
10. the method for the raising ultraviolet light polymerization uniformity according to claim 6 or 7, it is characterized in that, barrier layer is changed by material composition and makes the flatness layer that light transmission is strengthened to edge gradual change gradually by center.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610107411.XA CN105575782A (en) | 2016-02-26 | 2016-02-26 | Method of improving ultraviolet curing uniformity |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610107411.XA CN105575782A (en) | 2016-02-26 | 2016-02-26 | Method of improving ultraviolet curing uniformity |
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| CN105575782A true CN105575782A (en) | 2016-05-11 |
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| CN201610107411.XA Pending CN105575782A (en) | 2016-02-26 | 2016-02-26 | Method of improving ultraviolet curing uniformity |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108866513A (en) * | 2018-09-13 | 2018-11-23 | 德淮半导体有限公司 | Transparency silica glass plate and preparation method thereof, chemical vapor deposition process |
| CN110349910A (en) * | 2018-04-08 | 2019-10-18 | 北京北方华创微电子装备有限公司 | Chamber cover, processing chamber and semiconductor processing equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009139448A1 (en) * | 2008-05-16 | 2009-11-19 | 昭和電工株式会社 | Pattern forming method |
| JP2012089722A (en) * | 2010-10-21 | 2012-05-10 | Fuji Electric Co Ltd | Manufacturing method for semiconductor device and manufacturing apparatus therefor |
| US20120132618A1 (en) * | 2010-11-30 | 2012-05-31 | Applied Materials, Inc. | Method and apparatus for modulating wafer treatment profile in uv chamber |
| CN204088281U (en) * | 2014-09-22 | 2015-01-07 | 中芯国际集成电路制造(北京)有限公司 | Ultraviolet curing device |
-
2016
- 2016-02-26 CN CN201610107411.XA patent/CN105575782A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009139448A1 (en) * | 2008-05-16 | 2009-11-19 | 昭和電工株式会社 | Pattern forming method |
| JP2012089722A (en) * | 2010-10-21 | 2012-05-10 | Fuji Electric Co Ltd | Manufacturing method for semiconductor device and manufacturing apparatus therefor |
| US20120132618A1 (en) * | 2010-11-30 | 2012-05-31 | Applied Materials, Inc. | Method and apparatus for modulating wafer treatment profile in uv chamber |
| CN204088281U (en) * | 2014-09-22 | 2015-01-07 | 中芯国际集成电路制造(北京)有限公司 | Ultraviolet curing device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110349910A (en) * | 2018-04-08 | 2019-10-18 | 北京北方华创微电子装备有限公司 | Chamber cover, processing chamber and semiconductor processing equipment |
| CN108866513A (en) * | 2018-09-13 | 2018-11-23 | 德淮半导体有限公司 | Transparency silica glass plate and preparation method thereof, chemical vapor deposition process |
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Application publication date: 20160511 |
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