CN105568260A - Chemical vapor deposition equipment for multi-tube movement - Google Patents
Chemical vapor deposition equipment for multi-tube movement Download PDFInfo
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- CN105568260A CN105568260A CN201410615954.3A CN201410615954A CN105568260A CN 105568260 A CN105568260 A CN 105568260A CN 201410615954 A CN201410615954 A CN 201410615954A CN 105568260 A CN105568260 A CN 105568260A
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- support plate
- chemical vapor
- vapor deposition
- transmission system
- microwave generator
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Abstract
The invention relates to a multi-tube movement deposition device, in particular to a chemical vapor deposition device for multi-tube movement. The device comprises a reaction chamber, quartz tubes, a microwave generator and a transmission system. A deposition sample is always positioned in a movement state in the deposition process, and hidden danger that the film quality is reduced due to the output problem of a single energy source is reduced.
Description
Technical field
The present invention relates to a kind of multitube motion deposition apparatus, be the chemical vapor deposition unit of a kind of multitube motion specifically, this device can improve the quality of product rete, realizes the full-automation of integral device.
Background technology
Along with the fast development of economic construction, microelectronics obtains and rapidly develops, and exploitation and the use of plasma enhanced chemical vapor deposition equipment are also increasingly extensive.
Plasma enhanced chemical vapor deposition method, when chemical vapour deposition, can carry out at a lower temperature to make chemical reaction, the activity that make use of plasma body promotes reaction, this chemical gaseous phase depositing process is called plasma enhanced chemical vapor deposition method, and the equipment implementing this kind of working method is plasma enhanced chemical vapor deposition equipment.
A kind of chemical vapor deposition unit of multitube motion is more typical plasma enhanced chemical vapor deposition unit, multiple solar battery sheet loads in support plate by this device, by this carrier plate transmission in process cavity, after being preheating to design temperature, pass into process gas, setting power ionization process gas produces plasma body, and then completes thin film deposition.
The static depositional mode of the sample of deposition method many employings in the past, so just there is very high requirement to deposition source, because make thicknesses of layers even, require that energy source is in large area region firm power output everywhere, so this patent proposes the campaign-styled depositional mode of multitube, namely require that standby deposited samples is kept in motion in deposition process always, reduce the hidden danger because the output problem of single energy source causes film quality to decline.In addition campaign-styled depositional mode is easy to the automatization realizing integral device.
Summary of the invention
The present invention relates to a kind of multitube motion deposition apparatus, be the chemical vapor deposition unit of a kind of multitube motion specifically, this device comprises reaction chamber, silica tube, microwave generator and transmission system.This device can improve the quality of product rete, realizes the full-automation of integral device.
Described reaction cavity upper cover has top cover jacking system, and described top cover jacking system can conduct motor by electronic linear and open and close Pit cover.
Described microwave generator can produce the microwave of at least 2.45GHz frequency.
Described transmission system is equipped with the support plate of cell piece for transmitting.
Described transmission system is roller pattern, is connected by Hard link, can ensure the synchronism of described belt wheel.
Between whole support plate moving period, there is limit switch, Real-Time Monitoring support plate position.In the moving process of support plate, there is liner, support plate is advanced according to planned orbit.
Accompanying drawing explanation
Figure 1 shows that structural representation of the present invention.
Embodiment
In order to make those skilled in the art person understand the present invention program better, below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
This system has module structure, comprises three main chambers, the loading interlocking chamber of a charging, the loading interlocking chamber of a processing chamber and a discharging.Chamber is separated by the family of power and influence of operating pneumatic.Wherein, the loading interlocking chamber of material loading has ray heating electrodes, the loading of material loading interlocking chamber can be heated to 350-450 DEG C of processing chamber and be divided into three districts according to purposes by this array fast, substrate temperature stabilizes in the heating zone of depositing and setting value, sedimentary province and the cooling zone that graphite and wafer are cooled before leaving system.Wherein, described sedimentary province comprises some identical line style plasma sources being operated in 2.45GHz microwave frequency.Typical process atmospheric pressures scope is 0.1-0.5mbar.Process gas is SiH
4, NH
3andH
2.The transportation frame that wafer is housed within the scope of the twilight sunset of distance plasma (remote plasma technology) some centimetres through plasma source.
Conduct motor (main shaft drives) by electronic linear and open and close Pit cover, so that care and maintenance, wherein, this electronic linear conduction motor have employed principle.As long as the button cover handle system of answering by residence will be opened.Lid handle system can be stopped in any desired location.Maximum aperture angle is 98 ° ... 100 °.The limit (uncap He Guangai) of its stroke is determined by position transducer.Position transducer for detect lines way limit is the electronics limit switch being arranged in driving.
Be illustrated in figure 1 PECVD and deposit schematic diagram, the speed that the support plate of cell piece is housed can be that 130cm/ divides.
Only embodiments of the invention although aforementioned, under the ambit that the base region and described claim that do not depart from it determine, can design of the present invention other with further embodiment.
Claims (6)
1. a chemical vapor deposition unit for multitube motion, this device comprises reaction chamber, silica tube, microwave generator and transmission system.
2. according to claim 1, wherein, described reaction cavity upper cover has top cover jacking system, and described top cover jacking system can conduct motor by electronic linear and open and close Pit cover.
3. according to claim 1, wherein, described microwave generator can produce the microwave of at least 2.45GHz frequency.
4. according to claim 1, wherein, described transmission system is for transmitting the support plate that cell piece is housed.
5. according to claim 1, wherein, described transmission system is roller pattern, is connected by Hard link, can ensure the synchronism of described belt wheel.
6. according to claim 1, wherein, between whole support plate moving period, there is limit switch, Real-Time Monitoring support plate position.In the moving process of support plate, there is liner, support plate is advanced according to planned orbit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410615954.3A CN105568260A (en) | 2014-11-06 | 2014-11-06 | Chemical vapor deposition equipment for multi-tube movement |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410615954.3A CN105568260A (en) | 2014-11-06 | 2014-11-06 | Chemical vapor deposition equipment for multi-tube movement |
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CN105568260A true CN105568260A (en) | 2016-05-11 |
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Family Applications (1)
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CN201410615954.3A Pending CN105568260A (en) | 2014-11-06 | 2014-11-06 | Chemical vapor deposition equipment for multi-tube movement |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109136884A (en) * | 2018-07-23 | 2019-01-04 | 中国电子科技集团公司第四十八研究所 | The automatic transmission control unit of plate type PECVD apparatus support plate, PECVD device and method |
CN114192093A (en) * | 2021-11-12 | 2022-03-18 | 核工业西南物理研究院 | Corrosion-resistant plasma chemical reaction device |
-
2014
- 2014-11-06 CN CN201410615954.3A patent/CN105568260A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109136884A (en) * | 2018-07-23 | 2019-01-04 | 中国电子科技集团公司第四十八研究所 | The automatic transmission control unit of plate type PECVD apparatus support plate, PECVD device and method |
CN114192093A (en) * | 2021-11-12 | 2022-03-18 | 核工业西南物理研究院 | Corrosion-resistant plasma chemical reaction device |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
DD01 | Delivery of document by public notice |
Addressee: SHENYANG MAIWEI SCIENCE & TECHNOLOGY CO., LTD. Document name: Notification of Publication of the Application for Invention |
|
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160511 |
|
WD01 | Invention patent application deemed withdrawn after publication |