CN105568252A - Diamond film surface treatment method - Google Patents
Diamond film surface treatment method Download PDFInfo
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- CN105568252A CN105568252A CN201610001908.3A CN201610001908A CN105568252A CN 105568252 A CN105568252 A CN 105568252A CN 201610001908 A CN201610001908 A CN 201610001908A CN 105568252 A CN105568252 A CN 105568252A
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- 239000010432 diamond Substances 0.000 title claims abstract description 92
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 92
- 238000000034 method Methods 0.000 title claims abstract description 79
- 238000004381 surface treatment Methods 0.000 title claims abstract description 14
- 238000005498 polishing Methods 0.000 claims abstract description 36
- 238000000151 deposition Methods 0.000 claims abstract description 33
- 239000007789 gas Substances 0.000 claims abstract description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 230000008021 deposition Effects 0.000 claims abstract description 13
- 229910052786 argon Inorganic materials 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 24
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 8
- 239000004567 concrete Substances 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 20
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000000843 powder Substances 0.000 description 6
- 239000012153 distilled water Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000000725 suspension Substances 0.000 description 5
- 238000004506 ultrasonic cleaning Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 4
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 241000662429 Fenerbahce Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to a diamond film surface treatment method, and belongs to the technical field of preparation of diamond films. A single-surface-polished silicon chip serves as a substrate; a diamond film is prepared by a microwave plasma chemical vapor deposition method; and after the deposition and based on invariable parameters, when mixed gas of oxygen with a flow of 0-4 sccm and argon with a flow of 11-15 sccm is introduced for treating by 1-3 hours, the surface of the diamond film is treated in the process. The method can effectively improve the surface quality of the diamond film, keeps high diamond content, is simple, and is easy to be performed. Compared with traditional direct polishing, the method has the advantage of not reducing effective thickness.
Description
Technical field
The present invention relates to a kind of diamond film surface treatment method, belong to diamond film preparing technical field.
Background technology
Diamond is material the hardest in natural materials, and having extremely excellent mechanical property, optical property and electric property, is the functional materials having development potentiality most.But natural diamond low memory, expensive, be used for jewellery and Handicraft decorative.Therefore, artificially synthesizing diamond film seems particularly important.Diamond film grain-size prepared by conventional method is large, and be column or taper growth along some crystal face, thickness is extremely uneven, and cohesive strength is low, easily breaks, and surfaceness is high, cannot directly apply.Meanwhile, because high hardness causes bringing very large difficulty to surface treatment, applying of diamond film is limited.Therefore, the surface quality improving diamond film has become one of gordian technique expanding its application.
Surface finish process is the method for modal raising surface quality.Its main finishing method has: mechanical mill polishing, thermo-chemical polishing, ion beam polishing, laser beam polishing, abrasive waterjet polishing, spark polishing; Pure chemistry polishing, chemical auxiliary machinery polishing etc.These polishing technologies, because cost is too high, polishing difficulty large, cause polishing diamond film expensive, and the large-scale application limiting diamond film is promoted.
At present, the domestic research improving diamond film surface quality by adding argon-oxygen mixed gas have not been reported.The disclosed method improving diamond film surface quality mainly contains:
Publication number is the Chinese patent disclosed " Adamas material polishing method " of CN1607068A, first on polishing disk, add the salts substances of certain blending ratio, then diamond to be pressed on polishing disk with the pressure of 0.2 ~ 0.3MPa and with the heating temperatures of 100 ~ 300 DEG C, last rotating polishing discs also keeps salts substances to contact with diamond, diamond surface is leveled and polishing.This invention uses fused salt mixt as oxygenant, and adopt the polishing disk of groove of scrounging, by mechanochemical treatment, can improve the polishing effect of diamond at a lower temperature, polishing cost is low, and glazed surface quality is good.In polishing process, add fused salt as oxygenant, change the surface properties of diamond film, reduce diamond phase content, easily produce cut, reduce the application of diamond film in machinery, optics and electricity.
Publication number is the Chinese patent disclosed " a kind of surface flattening method of freestanding diamond film " of CN102699804A, first be that the hydrofluoric acid of 2:1 and nitric acid mixing solutions are at heating 100 DEG C by volume ratio, diamond surface is cleaned, to obtain clean surface; Then use the diamond coated film surface of anti-carburizer, and apply situation with microscopy; Then at 800 ~ 1200 DEG C, diamond film is heat-treated; Last mechanical polishing is to reach required surfaceness.Protuberance is only removed by the method fast, and surfaceness is reduced, and is conducive to further grinding and polishing, can also avoids the tiny crack that crystal grain may cause in large pressure grinds fast.In whole surface flattening process, add anti-carburizer in diamond concave surface and high-temperature heat treatment, be conducive to diamond and transform to graphite, reduce the quality of diamond film.The method process is loaded down with trivial details simultaneously, and operational requirement is high, is not suitable for promoting.
Publication number is the Chinese patent disclosed " a kind of technique utilizing quasi-diamond composite membrane to carry out diamond film planarization " of CN101935825A, on the silicon substrate of single-sided polishing, diamond film is prepared with Conventional deposition processes, again with chemical Vapor deposition process at diamond surface depositing diamond-like film, finally adopt mechanical polishing method to carry out planarization to diamond-film-like, thus obtain the diamond film of high flat degree.The method is simple to operate, and removal amount is few, and surface hardness is little, and polishing efficiency is high, and adopt the abrasive material of non-diamond powder greatly to reduce costs, its minimum surface roughness can be less than 1.5nm.Adding of diamond like carbon film, cause the total quality of diamond film to reduce, although polishing effect is good, in the application of optical field, certain restriction is created to diamond film.
Above-mentioned disclosed method effectively can improve the surface quality of diamond film, but technique is loaded down with trivial details, polishing difficulty is large, cost is high and diamond content all decreases, and is difficult to realize the application of diamond film at optical field.Meanwhile, add the research that argon-oxygen mixed gas improves diamond film surface quality have not been reported.
Summary of the invention
For above-mentioned prior art Problems existing and deficiency, the invention provides a kind of diamond film surface treatment method.Method of the present invention effectively can not only improve the surface quality of diamond film, keeps high diamond phase content, and easy easy enforcement.Compared with traditional direct polishing, there is the advantage not reducing its net thickness.The present invention is achieved through the following technical solutions.
A kind of diamond film surface treatment method, its concrete steps are as follows:
(1) with the silicon chip of single-sided polishing for substrate, adopt MPCVD method prepare diamond film;
(2), after step (1) has deposited, the basis of step (1) parameter constant passes into the mixture gas treatment 1 ~ 3 hour that flow is respectively 0 ~ 4sccm oxygen and 11 ~ 15sccm argon gas, and diamond film surface is processed in the process.
In described step (1), MPCVD method processing parameter is: methane flow is 2 ~ 6sccm, hydrogen flowing quantity is 100 ~ 300sccm, deposition pressure 4 ~ 8kPa, depositing temperature 715 ~ 885 DEG C, microwave power is 5 ~ 8kW, and depositing time is 6 ~ 10 hours.
The invention has the beneficial effects as follows:
(1) the present invention effectively can not only improve the surface quality of diamond film, keeps high diamond phase content, and easy easy enforcement.
(2) what the present invention adopted is oxygen-argon gas mixed gas, and its consumption is little, and cost is low, is conducive to promoting industrialized development.
(3) the present invention does not relate to using of hazardous and noxious substances and discharges, and implementation process is safe and reliable, environmentally friendly.
(4) the present invention is compared with traditional direct polishing, has the advantage not reducing its net thickness, do not produce tiny crack.
Accompanying drawing explanation
Fig. 1 is the stereoscan photograph of diamond film after the embodiment of the present invention 2 oxygen and argon gas process;
Fig. 2 is after the embodiment of the present invention 2 processes and untreated front diamond film surfaceness comparison diagram;
Fig. 3 is that the embodiment of the present invention 2 processes rear diamond film XPS composition analysis figure.
Embodiment
Below in conjunction with the drawings and specific embodiments, the invention will be further described.
Embodiment 1
This diamond film surface treatment method, its concrete steps are as follows:
(1) with the silicon chip of single-sided polishing for substrate, MPCVD method is adopted to prepare diamond film, detailed process is: first by the ethanol suspension solution supersound process 45min of silicon chip containing diamond powder, then difference ultrasonic cleaning 10min in acetone, ethanol and distilled water, last dry in nitrogen environment, MPCVD method processing parameter is: methane flow is 4sccm, hydrogen flowing quantity is 200sccm, deposition pressure 6.95kPa, depositing temperature 836 DEG C, microwave power is 6.5kW, and depositing time is 8 hours;
(2) after step (1) has deposited, on the basis of step (1) parameter constant, (namely for methane flow is 4sccm, hydrogen flowing quantity is 200sccm, deposition pressure 6.95kPa, depositing temperature 836 DEG C, microwave power is 6.5kW), passing into flow is 15sccm argon gas process 2 hours, and diamond film surface is processed in the process.
Diamond film surface after process adopts TR200 roughmeter to detect that its roughness is 129.1nm.
Embodiment 2
This diamond film surface treatment method, its concrete steps are as follows:
(1) with the silicon chip of single-sided polishing for substrate, MPCVD method is adopted to prepare diamond film, detailed process is: first by the ethanol suspension solution supersound process 45min of silicon chip containing diamond powder, then difference ultrasonic cleaning 10min in acetone, ethanol and distilled water, last dry in nitrogen environment, MPCVD method processing parameter is: methane flow is 4sccm, hydrogen flowing quantity is 200sccm, deposition pressure 6.95kPa, depositing temperature 836 DEG C, microwave power is 6.5kW, and depositing time is 8 hours;
(2) after step (1) has deposited, on the basis of step (1) parameter constant, (namely for methane flow is 4sccm, hydrogen flowing quantity is 200sccm, deposition pressure 6.95kPa, depositing temperature 836 DEG C, microwave power is 6.5kW), passing into flow is 1 and the oxygen of 14sccm and argon gas mixture gas treatment 2 hours, diamond film surface is processed in the process, the stereoscan photograph of the diamond film after process as shown in Figure 1, as can be seen from Figure 1 diamond surface is smooth, even particle distribution, after process, diamond film XPS composition analysis figure as shown in Figure 3, as can be seen from Figure 3 empirical curve (Experimental) and matched curve (Simulated) almost overlap completely, diamond phase (sp
3) relative content is up to 86.1%.
Diamond film surface after process adopts TR200 roughmeter to detect that its roughness is 81.5nm, if there is no the treating processes of step (2), the diamond film roughness prepared by means of only the present embodiment step (1) is 199.8nm, and both roughness comparison diagrams as shown in Figure 2.
Embodiment 3
This diamond film surface treatment method, its concrete steps are as follows:
(1) with the silicon chip of single-sided polishing for substrate, MPCVD method is adopted to prepare diamond film, detailed process is: first by the ethanol suspension solution supersound process 45min of silicon chip containing diamond powder, then difference ultrasonic cleaning 10min in acetone, ethanol and distilled water, last dry in nitrogen environment, MPCVD method processing parameter is: methane flow is 4sccm, hydrogen flowing quantity is 200sccm, deposition pressure 6.95kPa, depositing temperature 836 DEG C, microwave power is 6.5kW, and depositing time is 8 hours;
(2) after step (1) has deposited, on the basis of step (1) parameter constant, (namely for methane flow is 4sccm, hydrogen flowing quantity is 200sccm, deposition pressure 6.95kPa, depositing temperature 836 DEG C, microwave power is 6.5kW), passing into flow is 4 and 11sccm oxygen and argon gas mixture gas treatment 2 hours, and diamond film surface is processed in the process.
Diamond film surface after process adopts TR200 roughmeter to detect that its roughness is 177.1nm.
Embodiment 4
This diamond film surface treatment method, its concrete steps are as follows:
(1) with the silicon chip of single-sided polishing for substrate, MPCVD method is adopted to prepare diamond film, detailed process is: first by the ethanol suspension solution supersound process 45min of silicon chip containing diamond powder, then difference ultrasonic cleaning 10min in acetone, ethanol and distilled water, last dry in nitrogen environment, MPCVD method processing parameter is: methane flow is 6sccm, hydrogen flowing quantity is 300sccm, deposition pressure 8kPa, depositing temperature 885 DEG C, microwave power is 8kW, and depositing time is 10 hours;
(2) after step (1) has deposited, on the basis of step (1) parameter constant, (namely for methane flow is 6sccm, hydrogen flowing quantity is 300sccm, deposition pressure 8kPa, depositing temperature 885 DEG C, microwave power is 8kW), passing into flow is 4 and 15sccm oxygen and argon gas mixture gas treatment 3 hours, and diamond film surface is processed in the process.
Diamond film surface after process adopts TR200 roughmeter to detect that its roughness is 156.3nm.
Embodiment 5
This diamond film surface treatment method, its concrete steps are as follows:
(1) with the silicon chip of single-sided polishing for substrate, MPCVD method is adopted to prepare diamond film, detailed process is: first by the ethanol suspension solution supersound process 45min of silicon chip containing diamond powder, then difference ultrasonic cleaning 10min in acetone, ethanol and distilled water, last dry in nitrogen environment, MPCVD method processing parameter is: methane flow is 2sccm, hydrogen flowing quantity is 100sccm, deposition pressure 4kPa, depositing temperature 715 DEG C, microwave power is 5kW, and depositing time is 6 hours;
(2) after step (1) has deposited, on the basis of step (1) parameter constant, (namely for methane flow is 2sccm, hydrogen flowing quantity is 100sccm, deposition pressure 4kPa, depositing temperature 715 DEG C, microwave power is 5kW), passing into flow is 2 and 13sccm oxygen and argon gas mixture gas treatment 1 hour, and diamond film surface is processed in the process.
Diamond film surface after process adopts TR200 roughmeter to detect that its roughness is 134.6nm.
Below by reference to the accompanying drawings the specific embodiment of the present invention is explained in detail, but the present invention is not limited to above-mentioned embodiment, in the ken that those of ordinary skill in the art possess, various change can also be made under the prerequisite not departing from present inventive concept.
Claims (2)
1. a diamond film surface treatment method, is characterized in that concrete steps are as follows:
(1) with the silicon chip of single-sided polishing for substrate, adopt MPCVD method prepare diamond film;
(2) after step (1) has deposited, on the basis of step (1) parameter constant, pass into the mixture gas treatment 1 ~ 3 hour that flow is respectively 0 ~ 4sccm oxygen and 11 ~ 15sccm argon gas, diamond film surface is processed in the process.
2. diamond film surface treatment method according to claim 1, it is characterized in that: in described step (1), MPCVD method processing parameter is: methane flow is 2 ~ 6sccm, hydrogen flowing quantity is 100 ~ 300sccm, deposition pressure 4 ~ 8kPa, depositing temperature 715 ~ 885 DEG C, microwave power is 5 ~ 8kW, and depositing time is 6 ~ 10 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610001908.3A CN105568252A (en) | 2016-01-06 | 2016-01-06 | Diamond film surface treatment method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610001908.3A CN105568252A (en) | 2016-01-06 | 2016-01-06 | Diamond film surface treatment method |
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| CN105568252A true CN105568252A (en) | 2016-05-11 |
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| CN201610001908.3A Pending CN105568252A (en) | 2016-01-06 | 2016-01-06 | Diamond film surface treatment method |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106011781A (en) * | 2016-06-21 | 2016-10-12 | 昆明理工大学 | Method for increasing depositional area of diamond film |
| CN106637143A (en) * | 2016-09-23 | 2017-05-10 | 常州大学 | Preparation method of MPCVD diamond film |
| CN106929828A (en) * | 2017-05-12 | 2017-07-07 | 中国工程物理研究院应用电子学研究所 | A kind of chip bench that diamond film is prepared for MPCVD method |
| CN107267952A (en) * | 2017-05-05 | 2017-10-20 | 宁波工程学院 | A kind of method that chemical vapor deposition is coated with diamond film |
| CN111349906A (en) * | 2020-04-22 | 2020-06-30 | 李友杰 | Hot wire bearing frame, diamond film deposition equipment and control method |
| CN113088921A (en) * | 2021-04-13 | 2021-07-09 | 昆明理工大学 | Preparation method of porous diamond film/three-dimensional carbon nanowire network composite material and product thereof |
| CN113186510A (en) * | 2021-04-28 | 2021-07-30 | 昆明理工大学 | Metal reinforced porous diamond film and preparation method thereof |
| CN113529050A (en) * | 2021-07-05 | 2021-10-22 | 云南民族大学 | Plasma etching method for polishing diamond film and product thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5749966A (en) * | 1993-05-14 | 1998-05-12 | Modular Process Technology Corp. | Process for depositing diamond and refractory materials |
| CN101112747A (en) * | 2007-08-28 | 2008-01-30 | 武汉工程大学 | Diamond film polishing method |
-
2016
- 2016-01-06 CN CN201610001908.3A patent/CN105568252A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5749966A (en) * | 1993-05-14 | 1998-05-12 | Modular Process Technology Corp. | Process for depositing diamond and refractory materials |
| CN101112747A (en) * | 2007-08-28 | 2008-01-30 | 武汉工程大学 | Diamond film polishing method |
Non-Patent Citations (3)
| Title |
|---|
| Y.S.ZOU: "Deposition and characterization of smooth ultra-nanocrystalline diamond film in CH4/H2/Ar by microwave plasma chemical vapor deposition", 《VACUUM》 * |
| YOUNG-SOO HAN 等: "Effects of argon and oxygen addition to the CH4-H2 feed gas on diamond synthesis by microwave plasma enhanced chemical vapor deposition", 《THIN SOLID FILMS》 * |
| 刘聪 等: "氧气流量对MPCVD制备微/纳米双层金刚石膜的影响", 《人工晶体学报》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106011781A (en) * | 2016-06-21 | 2016-10-12 | 昆明理工大学 | Method for increasing depositional area of diamond film |
| CN106637143A (en) * | 2016-09-23 | 2017-05-10 | 常州大学 | Preparation method of MPCVD diamond film |
| CN107267952A (en) * | 2017-05-05 | 2017-10-20 | 宁波工程学院 | A kind of method that chemical vapor deposition is coated with diamond film |
| CN107267952B (en) * | 2017-05-05 | 2023-05-23 | 宁波工程学院 | Method for plating diamond film by chemical vapor deposition |
| CN106929828A (en) * | 2017-05-12 | 2017-07-07 | 中国工程物理研究院应用电子学研究所 | A kind of chip bench that diamond film is prepared for MPCVD method |
| CN106929828B (en) * | 2017-05-12 | 2023-05-23 | 中国工程物理研究院应用电子学研究所 | Substrate table for preparing diamond film by microwave plasma chemical vapor deposition method |
| CN111349906A (en) * | 2020-04-22 | 2020-06-30 | 李友杰 | Hot wire bearing frame, diamond film deposition equipment and control method |
| CN113088921A (en) * | 2021-04-13 | 2021-07-09 | 昆明理工大学 | Preparation method of porous diamond film/three-dimensional carbon nanowire network composite material and product thereof |
| CN113186510A (en) * | 2021-04-28 | 2021-07-30 | 昆明理工大学 | Metal reinforced porous diamond film and preparation method thereof |
| CN113529050A (en) * | 2021-07-05 | 2021-10-22 | 云南民族大学 | Plasma etching method for polishing diamond film and product thereof |
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Application publication date: 20160511 |