CN105549230A - Terahertz circularly polarized light generating method based on narrow-band semiconductor indium antimonide - Google Patents
Terahertz circularly polarized light generating method based on narrow-band semiconductor indium antimonide Download PDFInfo
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- CN105549230A CN105549230A CN201510968344.6A CN201510968344A CN105549230A CN 105549230 A CN105549230 A CN 105549230A CN 201510968344 A CN201510968344 A CN 201510968344A CN 105549230 A CN105549230 A CN 105549230A
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- terahertz
- indium antimonide
- magnetic field
- circularly polarized
- polarized light
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0136—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour for the control of polarisation, e.g. state of polarisation [SOP] control, polarisation scrambling, TE-TM mode conversion or separation
Abstract
The invention relates to a terahertz circularly polarized light generating method based on narrow-band semiconductor indium antimonide. An indium antimonide sample wafer is placed in a cryostat, incident ray polarization terahertz waves pass through a linear polarizing film to make the degree of polarization increased after temperature becomes stable, incident rays irradiate on the surface of the indium antimonide sample wafer after focusing, and an adjustable and stable magnetic field is perpendicularly loaded on the indium antimonide sample wafer. Terahertz circularly polarized light is obtained according to the frequency of incident terahertz by adjusting the incidence loading direction and intensity of the magnetic field. The method has the advantages that modulation frequency is wide, circular polarization output is prefect and a polarizing device is tunable.
Description
Technical field
The present invention relates to optics and Terahertz science and technology, particularly a kind of Terahertz circularly polarized light production method based on narrow-band semiconductor indium antimonide.
Background technology
THz wave is frequency 0.1-10THz (1THz=10
12hz) electromagnetic wave of scope, the wavelength coverage of its correspondence is 3mm – 30 μm, wave band traditional microwave and infrared between.Terahertz Technology is in Non-Destructive Testing, and safe imaging, the field such as communication and sensing has a wide range of applications.These application not only need efficient terahertz sources source and detector, also need efficient optical device to regulate and control THz wave, as amplitude modulator, polaroid, wave plate, speed-sensitive switch etc.The device of highly effective is lacked to manipulate the development that THz wave has limited Terahertz Technology in terahertz wave band.In all these Terahertzs regulation and control device, the demand of wave plate is the most urgent.
Optical wave plate generally utilizes certain thickness birefringece crystal to manufacture.When normal incidence light transmission, ordinary light (o light) and the phase differential of non-ordinary light (e light) after birefringece crystal modulation equal π or its odd-multiple, and such wave plate is called 1/2nd wave plates, is called for short half-wave plate; When phase differential equals pi/2 or its odd-multiple, such wave plate is called quarter-wave plate./ 2nd wave plates are used for rotatory polarization polarisation of light direction, and quarter-wave spectrum is used for linearly polarized light to become circularly polarized light.Usually, the optical axis being set as the polarization direction of incident light with birefringece crystal is the direction of miter angle, at this moment ordinary light and very light component is equal, and after quarter-wave plate, the phase place of ordinary light falls behind non-ordinary light 90 degree, produces circularly polarized light after coincidence.Traditional Terahertz quarter-wave plate utilizing crystal birefringence to make can only in arrowband or the work of Simple Harmonics place, and basic reason is that the phase delay that wave plate produces has frequency dependence to a great extent.
Except the above-mentioned method utilizing quarter-wave plate to produce circularly polarized light, artificial electromagnetic medium (Metamaterial) also can realize the generation of circularly polarized light.This polaroid utilizes the surface plasma resonant vibration of the metal micro structure of artificial electromagnetic media surface on the impact of incident terahertz polarization state, through particular design, and can in relatively large band width work.But, because dispersion near the resonance frequency of artificial electromagnetic medium is very serious, thus limit the responsive bandwidth of device.
Terahertz can produce isoionic mode and produces by two-tone femtosecond laser pulse being converged in air, and the light usually produced is linear polarization.By changing the polarization state of incident femtosecond laser, such as utilizing circular polarization, oval or circularly polarized THz wave can be produced.In addition, the high-intensity magnetic field (100T) that theoretical prophesy loads along incident direction on laser-produced plasma, can produce circularly polarized light.These methods all require to use femtosecond laser amplifier, cost intensive.
Summary of the invention
The object of the present invention is to provide a kind of Terahertz circularly polarized light production method based on narrow-band semiconductor indium antimonide, to overcome the defect existed in prior art.
For achieving the above object, technical scheme of the present invention is: a kind of Terahertz circularly polarized light production method based on narrow-band semiconductor indium antimonide, the terahertz polarization device of one indium antimonide print is placed in cryostat, after temperature stabilization, incident ray polarization THz wave is improved degree of polarization through a linear polarizer, the surface of described indium antimonide print is exposed to after focusing, and an adjustable stable vertical magnetic field is loaded on described indium antimonide print, according to the frequency of incident Terahertz, and pass through the size in the described magnetic field of adjustment and incident loading direction, complete the acquisition of Terahertz circularly polarized light.
In invention one embodiment, described incident ray polarization THz wave is through the center of described linear polarizer and the center of described indium antimonide print.
In invention one embodiment, described indium antimonide print is indium antimonide narrow-band semiconductor sample, electron concentration n=2.3 × 10
14cm
-3, mobility [mu]=7.7 × 10
4cm
2/ Vsat2K, energy gap E
g=0.23eV.
In invention one embodiment, adjust described magnetic field along incident direction perpendicular to described indium antimonide print, electronics in described indium antimonide print forms magnetic low temperature plasma under magnetic field, adjust the size in described magnetic field, at specific frequency range inner total reflection Left-hand circular polarization terahertz light, obtain right-hand circular polarization terahertz light; If described magnetic field loading direction is contrary with incident Terahertz direction, is then totally reflected right-hand circular polarization terahertz light, obtains Left-hand circular polarization terahertz light.
In invention one embodiment, along with magnetic field increases, described magnetic low temperature plasma absorption edge is split into two magnetic plasma frequency items:
And corresponding two specific inductive capacity items:
Wherein ,+number be CRA pattern ,-number be CRI pattern, ω is wave frequency, ω
cfor electron cyclotron resonance frequency, ω
pfor plasma frequency, κ
ιfor permittivity of vacuum, κ '
±be the real part of the complex permittivity of two kinds of patterns, and as κ '
±during for negative, represent and do not have light can propagate in described indium antimonide print, be also namely totally reflected.
In invention one embodiment, under described CRA pattern, described Left-hand circular polarization terahertz light is totally reflected, only there is described right-hand circular polarization terahertz light can penetrate described indium antimonide print, this total reflection occurs in an incident frequencies interval, and this frequency separation increases to high-frequency mobile with magnetic field; Under described CRI pattern, described right-hand circular polarization terahertz light is totally reflected, only have described Left-hand circular polarization terahertz light can penetrate described indium antimonide print, this total reflection occurs in another frequency separation, and this frequency separation moves to low frequency with magnetic field increase.
Compared to prior art, the present invention has following beneficial effect: a kind of Terahertz circularly polarized light production method based on narrow-band semiconductor indium antimonide proposed by the invention, compared with the terahertz polarization device of tradition routine, has following advantage:
(1) modulating frequency is wide; Most of terahertz polarization device can only work in unifrequency or narrower frequency range.And terahertz polarization device of the present invention, determined by the electron concentration of sample, electron concentration is higher, adjusts frequency wider.Be 2.3 × 10 for electron concentration
14cm
-3, when magnetic field is 0.5T, modulation range is 0.45THz.
(2) perfect circular polarization outgoing; According to described theory calculate, when magnetic field is along when incident direction vertical loading is on sample, left circularly polarized light is totally reflected completely (100%), outgoing be perfect dextrorotation terahertz polarization light.And other terahertz polarization device all can not produce perfect circularly polarized light, usually there is certain elliptic polarization degree.
(3) tunable; Increase to high-frequency mobile with magnetic field the total reflection of left circularly polarized light is interval, so terahertz polarization device of the present invention is tunable, this is not available for other polarizers.
Accompanying drawing explanation
Fig. 1 is that in the present invention, Terahertz visits polarizer use schematic diagram.
Fig. 2 is the transmittance graph of the left-handed and right-handed polarized light of terahertz polarization device under different magnetic field in the present invention.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is specifically described.
The invention provides a kind of novel terahertz polarization device based on narrow-band semiconductor indium antimonide, effectively can change linear polarization THz wave into circular polarization THz wave.It is wide that this polarizer has modulating frequency, perfect circular polarization outgoing, tunable feature.
Fig. 1 is that Terahertz of the present invention visits polarizer use schematic diagram, comprises indium antimonide sample, incident ray polarization THz wave, linear polarizer and outgoing circular polarization THz wave.Incident THz wave improves degree of polarization through linear polarizer, then incides on indium antimonide sample; Indium antimonide sample load along the stabilizing magnetic field of incident direction perpendicular to sample, electronics in sample forms magnetic low temperature plasma under magnetic field, at specific frequency range inner total reflection left circularly polarized light, finally obtain perfect right-hand circular polarization terahertz light in this frequency separation.If described magnetic field loading direction is contrary with incident Terahertz direction, be then totally reflected right-circularly polarized light, outgoing left circularly polarized light.By changing magnetic field loading direction, reach the object selecting left/right rotatory polarization.In the present embodiment, the frequency separation at this place changes with the change in magnetic field, according to incident polarization Terahertz wave frequency, the interval that total reflection occurs is regulated by changing magnetic field, make how polarization THz wave frequency is positioned at this frequency separation, now, Left-hand circular polarization is reflected, and right-hand circular polarization exports.Fig. 2 is the transmittance graph of the left-handed and right-handed polarized light of terahertz polarization device of the present invention under different magnetic field.The longitudinal axis is the transmissivity of Terahertz, and transverse axis is incident wave frequency (unit is THz), and left column is the left circularly polarized light of transmission.The right side is classified as the right-circularly polarized light of transmission.Magnetic field is that size is respectively 0.25T, 0.5T and 0.75T along incident direction perpendicular to sample.Can see that in the interval range indicated by double-head arrow, left circularly polarized light is transmitted as zero, hint is totally reflected, and right-hand circular polarization perfection exports.Can see, Left-hand circular polarization total reflection occurrence frequency is interval to be increased to high-frequency mobile with magnetic field.In the present embodiment, as shown in Figure 2, be 0.5T in magnetic field, total reflection frequency range is at this moment 0.75THz-1.2THz.As long as the frequency of incident Terahertz is in this scope, just can utilize this polarizer that linear polarization Terahertz is converted to left/right circular polarization Terahertz.
Further, indium antimonide narrow-band semiconductor sample is selected in the present embodiment, electron concentration n=2.3 × 10
14cm
-3, mobility [mu]=7.7 × 10
4cm
2/ Vsat2K, energy gap E
g=0.23eV.Linear entrance terahertz light can be decomposed into Left-hand circular polarization and right-hand circular polarization:
for linear polarization feeding sputtering light,
for Left-hand circular polarization component,
for right-hand circular polarization component.Under magnetic field, Left-hand circular polarization can be coupled with electron cyclotron resonace in sample, so be called CRA pattern (CyclotronResonanceActive), right-hand circular polarization can not be coupled with electron cyclotron resonace, be then called CRI pattern (CyclotronResonanceInactive).Increase with magnetic field, plasma absorbing edge is split into two magnetic plasma frequency items,
Corresponding two specific inductive capacity items
+ number be CRA pattern ,-number be CRI pattern.ω is wave frequency, ω
cfor electron cyclotron resonance frequency, ω
pfor plasma frequency, κ
ιfor permittivity of vacuum, κ '
±be the real part of the complex permittivity of two kinds of patterns, as κ '
±during for negative, representative does not have light to propagate in the sample to which, is namely totally reflected.
Further, in the present embodiment, for CRA pattern, total reflection occurs at a specific frequency in interval, and increases to high-frequency mobile with magnetic field, as in Fig. 2 indicated by double-head arrow; For CRI pattern, total reflection occurs in extremely low frequency, and moves, indicated by arrow single in Fig. 2 with magnetic field increase item low frequency.
Further, in the present embodiment, by utilizing the total reflection interval in CRA pattern to produce circularly polarized light.Can see from Fig. 2, in this frequency separation, left-hand polarization light is totally reflected, and only has right-handed polarized light to penetrate sample.It is exactly more than the principle that in the present embodiment, terahertz polarization device produces circularly polarized light.
Further, in the present embodiment, the electron concentration of indium antimonide sample determines the size of above-mentioned total reflection frequency separation, and concentration is higher, and total reflection frequency separation scope is larger.Be 2.3 × 10 for electron concentration
14cm
-3, when magnetic field is 0.5T, modulation range is 0.45THz.Meanwhile, when magnetic direction is along when Terahertz incident direction vertical loading is on sample, Left-hand circular polarization is totally reflected, and outgoing is right-hand circular polarization; If described magnetic field loading direction is contrary with incident Terahertz direction, then right-hand circular polarization is totally reflected, and outgoing is Left-hand circular polarization.By regulating the loading direction in magnetic field, can select to export as left/right rounding polarization.
Further, when specifically using, first described detector is placed in cryostat a period of time; When temperature stabilization, incident terahertz signal is improved degree of polarization through linear polarizer, after focusing, is radiated at THE SURFACE OF INDIUM ANTIMONIDE, and load a vertical adjustable stabilizing magnetic field.According to wavelength and the outgoing terahertz polarization state (left-handed or right-hand circular polarization) that will select of incident Terahertz, select suitable magnetic field size and loading direction, just obtain the Terahertz circularly polarized light output that user wants.
Be more than preferred embodiment of the present invention, all changes done according to technical solution of the present invention, when the function produced does not exceed the scope of technical solution of the present invention, all belong to protection scope of the present invention.
Claims (6)
1. the Terahertz circularly polarized light production method based on narrow-band semiconductor indium antimonide, it is characterized in that, one indium antimonide print is placed in cryostat, after temperature stabilization, incident ray polarization THz wave is improved degree of polarization through a linear polarizer, the surface of described indium antimonide print is exposed to after focusing, and an adjustable stable vertical magnetic field is loaded on described indium antimonide print, and according to described incident polarization Terahertz wave frequency, adjusted size and the loading direction in described magnetic field by correspondence, complete the acquisition of Terahertz circularly polarized light.
2. a kind of Terahertz circularly polarized light production method based on narrow-band semiconductor indium antimonide according to claim 1, is characterized in that, described incident ray polarization THz wave is through the center of described linear polarizer and the center of described indium antimonide print.
3. a kind of Terahertz circularly polarized light production method based on narrow-band semiconductor indium antimonide according to claim 1, it is characterized in that, described indium antimonide print is indium antimonide narrow-band semiconductor sample, electron concentration n=2.3 × 10
14cm
-3, mobility [mu]=7.7 × 10
4cm
2/ Vsat2K, energy gap E
g=0.23eV.
4. a kind of Terahertz circularly polarized light production method based on narrow-band semiconductor indium antimonide according to claim 1, it is characterized in that, adjust described magnetic field along Terahertz incident direction perpendicular to described indium antimonide print, electronics in described indium antimonide print forms magnetic low temperature plasma under magnetic field, adjust the size in described magnetic field, total reflection Left-hand circular polarization terahertz light, obtains right-hand circular polarization terahertz light; If described magnetic field loading direction is contrary with incident Terahertz direction, total reflection right-hand circular polarization terahertz light, obtains Left-hand circular polarization terahertz light.
5. a kind of Terahertz circularly polarized light production method based on narrow-band semiconductor indium antimonide according to claim 4, is characterized in that, along with magnetic field increases, described magnetic low temperature plasma absorption edge is split into two magnetic plasma frequency items:
And corresponding two specific inductive capacity items:
Wherein ,+number be CRA pattern ,-number be CRI pattern, ω is wave frequency, ω
cfor electron cyclotron resonance frequency, ω
pfor plasma frequency, κ
ιfor permittivity of vacuum, κ '
±be the real part of the complex permittivity of two kinds of patterns, and as κ '
±during for negative, represent and do not have light can propagate in described indium antimonide print, be also namely totally reflected.
6. a kind of Terahertz circularly polarized light production method based on narrow-band semiconductor indium antimonide according to claim 5, it is characterized in that, under described CRA pattern, described Left-hand circular polarization terahertz light is totally reflected, only there is described right-hand circular polarization terahertz light can penetrate described indium antimonide print, this total reflection occurs in an incident frequencies interval, and this frequency separation increases to high-frequency mobile with magnetic field; Under described CRI pattern, described right-hand circular polarization terahertz light is totally reflected, only have described Left-hand circular polarization terahertz light can penetrate described indium antimonide print, this total reflection occurs in another frequency separation, and this frequency separation moves to low frequency with magnetic field increase.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110265790A (en) * | 2019-04-30 | 2019-09-20 | 重庆邮电大学 | A kind of broadband Terahertz quarter-wave plate based on H-shaped structure |
| CN111916976A (en) * | 2020-08-10 | 2020-11-10 | 北京航空航天大学 | Spin-emission-based ultra-wideband polarization tunable terahertz radiation source |
| CN112510469A (en) * | 2020-09-27 | 2021-03-16 | 北京航空航天大学 | Polarization tunable terahertz radiation source based on spin emission and linearly polarized light current |
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2015
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265790A (en) * | 2019-04-30 | 2019-09-20 | 重庆邮电大学 | A kind of broadband Terahertz quarter-wave plate based on H-shaped structure |
| CN111916976A (en) * | 2020-08-10 | 2020-11-10 | 北京航空航天大学 | Spin-emission-based ultra-wideband polarization tunable terahertz radiation source |
| CN112510469A (en) * | 2020-09-27 | 2021-03-16 | 北京航空航天大学 | Polarization tunable terahertz radiation source based on spin emission and linearly polarized light current |
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