CN105514622B - A kind of four frequency microstrip reflection array antennas - Google Patents
A kind of four frequency microstrip reflection array antennas Download PDFInfo
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- CN105514622B CN105514622B CN201511001077.1A CN201511001077A CN105514622B CN 105514622 B CN105514622 B CN 105514622B CN 201511001077 A CN201511001077 A CN 201511001077A CN 105514622 B CN105514622 B CN 105514622B
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- 230000005855 radiation Effects 0.000 claims description 9
- 239000007769 metal material Substances 0.000 claims description 6
- 230000010287 polarization Effects 0.000 description 13
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- 238000004891 communication Methods 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
- H01Q21/061—Two dimensional planar arrays
- H01Q21/064—Two dimensional planar arrays using horn or slot aerials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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Abstract
The present invention relates to a kind of four frequency microstrip reflection array antennas, including：Feed and microstrip reflection array, feed are pyramidal horn antenna, and microstrip reflection array includes multiple evenly distributed single layer cross oscillator units and the double-deck rectangular patch unit；Wherein, multiple single layer cross oscillator units are transversely arranged embarks on journey, and longitudinal arrangement is in column；There are four the double-deck rectangular patch unit, the center distances having the same of center four double-deck rectangular patch units adjacent thereto of cross oscillator unit for the surrounding distribution of each single layer cross oscillator unit；The working frequency of the four frequencies microstrip reflection array antenna is respectively 9GHz, 13.58GHz, 24GHz and 30GHz, the direction that single layer cross oscillator unit is intersected by two works in 9GHz and 13.58GHz respectively, and the direction that the double-deck rectangular patch unit is intersected by two works in 24GHz and 30GHz respectively.
Description
Technical field
The invention belongs to antenna technical field, more particularly to a kind of four frequency microstrip reflection array antennas.
Background technology
Parabola antenna and array antenna are widely applied as traditional satellite antenna.Although parabola antenna increases
Beneficial height, working band are wide, but it has the shortcomings that volume is big, weight is big, installation is difficult, processing difficulties, especially in high frequency.Battle array
Array antenna is although small, and scan mode is flexible and range is larger, but its efficiency is low, feeding network is complicated, transmission loss is big,
The active device of load is expensive.These disadvantages limit above two antenna in radar, satellite communication to a certain extent
Etc. application.
Microstrip reflectarray antenna is the one kind for being combined several advantages of parabola antenna and array antenna and being formed
Antenna form, it is made of feed and reflective array, so that it is radiated feed by each unit is designed in being poised for battle
The scattering phase of wave carries out certain adjustment so that the field reflected through reflective array forms desired phase point on array mouth face
Cloth, to give off the wave beam of setting.Compared with above two high-gain aerial, microstrip reflectarray antenna has the following advantages that：Body
Product is small, light-weight, processing is simple and at low cost, efficiency is higher, easily realization beam scanning, easily conformal etc. with carrier.These advantages
So that reflective array antenna all has very high application value in military and civilian field.The major defect of microstrip reflectarray antenna is
Narrow bandwidth limits its application to a certain extent.With the fast development of the communication technology, the requirement to antenna is higher and higher,
The research of broadband and multifrequency reflective array is more and more urgent, and has very strong practical value.It is most of in existing document
Multifrequency be all confined to double frequency, it is less for the design of three frequency ranges or more.It is common in the design of multifrequency microstrip reflective array
There are single layer and double-deck two kinds of structure types.Single layer structure is the knot being all placed in the unit of different frequency range on same layer dielectric substrate
Configuration formula, this is higher to the substantive requirements of form of unit.Double-layer structure can be divided into two different forms：Low frequency front is placed in high frequency
It is placed on low frequency front with high frequency front on front.
Invention content
It is an object of the invention to overcome the microstrip reflectarray antenna used in the prior art to be difficult to realize four band operations
The technical issues of, to provide a kind of four frequency microstrip reflection array antennas, for microstrip reflection array antenna realize multifrequency or
There is important reference value for bore multiplexing.
To achieve the goals above, the present invention provides a kind of four frequency microstrip reflection array antennas, including：Feed and micro-strip
Reflective array, the feed are pyramidal horn antenna, and the microstrip reflection array includes multiple evenly distributed single layer cross
Oscillator unit and the double-deck rectangular patch unit；Wherein,
Multiple single layer cross oscillator units are transversely arranged to embark on journey, and longitudinal arrangement is in column；Each single layer cross oscillator list
The surrounding distribution of member is there are four the double-deck rectangular patch unit, the center of the cross oscillator unit four bilayers adjacent thereto
The center distance having the same of rectangular patch unit；The working frequency of the four frequencies microstrip reflection array antenna be respectively 9GHz,
13.58GHz, 24GHz and 30GHz, the direction that the single layer cross oscillator unit is intersected by two work in 9GHz respectively
And 13.58GHz, the direction that the bilayer rectangular patch unit is intersected by two work in 24GHz and 30GHz respectively.
In above-mentioned technical proposal, the single layer cross oscillator unit or the double-deck rectangular patch list are determined in the following way
The unit size size of member：
Being calculated first using following formula needs the phase of compensation at microstrip reflection array each unit position at each frequency
Place value：
Wherein, k0It is the propagation constant in vacuum, the corresponding propagation constant of different frequencies is different；(xi,yi) it is i-th
The centre coordinate of unit；diRepresent the distance between feed phase center and i-th of unit；For radiation beam direction；
ΦR(xi,yi) it is exactly the phase compensated needed for i-th of unit；
After the phase value for obtaining compensating needed for the unit at each position of microstrip reflection array, at each frequency
Reflected phase curve finds out the size of unit by linear difference algorithm.
In above-mentioned technical proposal, the single layer cross oscillator unit includes：Cross oscillator, dielectric substrate, metal
Plate；The cross oscillator is attached to the surface of the dielectric substrate, and the lower surface of the dielectric substrate is with being attached to the metal
On plate；The cross oscillator is made of metal material.
In above-mentioned technical proposal, the grid cycle p of the single layer cross oscillator unit is 13mm, dielectric constant 2.2,
Width w of the cross oscillator in the directions x and the directions y is 1mm, and dielectric substrate thickness h is 1.5mm.
In above-mentioned technical proposal, when incidence wave is that y polarizes, the single layer cross oscillator unit is operated in 9GHz, when
When incidence wave is that x polarizes, the single layer cross oscillator unit is operated in 13.58GHz.
In above-mentioned technical proposal, the bilayer rectangular patch unit includes upper layer patch, lower layer's patch and two layer medium
Substrate, metal floor；The upper layer patch is attached to the upper surface of top dielectric substrate, and lower layer's patch is attached to lower layer Jie
The upper surface of matter substrate, the layer dielectric substrate are attached on the metal floor；The rectangular patch is made of metal material.
In above-mentioned technical proposal, the grid cycle q of the bilayer rectangular patch unit is single layer cross oscillator unit grid
The half in lattice period；The overall thickness of the double-deck rectangular patch unit is identical as the thickness of single layer cross oscillator unit；Dielectric constant
It is 2.2；The length of side of upper layer patch is k times of lower layer's patch length of side.
In above-mentioned technical proposal, the value of k is 0.65.
In above-mentioned technical proposal, when incidence wave is that y polarizes, the bilayer rectangular patch cell operation is in 24GHz；When entering
When ejected wave is that x polarizes, the bilayer rectangular patch cell operation is in 30GHz.
The advantage of the invention is that：
The four frequency microstrip reflection array antennas of the present invention are pasted by the single layer cross oscillator unit and the double-deck rectangle of setting
Blade unit, and fully consider the mutual coupling between different frequency unit so that the antenna can work at the same time 9GHz,
At tetra- frequencies of 13.58GHz, 24GHz and 30GHz, so that the bore of reflectarray antenna has obtained sufficient multiplexing；This
The microstrip reflection array antenna of invention has good four radio-frequency radiations performance, is easy to Project Realization, structure is relatively easy, has
Higher engineering application value.
Description of the drawings
Fig. 1 is the vertical view of the microstrip reflection array in the four frequency microstrip reflection array antennas of the present invention；
Fig. 2 is the structural schematic diagram of the single layer cross oscillator unit of the present invention；
Fig. 3 is the structural schematic diagram of the double-deck rectangular patch unit of the present invention；
Fig. 4 is reflected phase curve of the cross oscillator unit at 9GHz in the presence of the double-deck rectangular patch unit；
Fig. 5 is that reflected phase of the cross oscillator unit at 13.58GHz is bent in the presence of the double-deck rectangular patch unit
Line；
Fig. 6 is reflected phase curve of the double-deck rectangular patch unit at 24GHz in the presence of cross oscillator unit；
Fig. 7 is reflected phase curve of the double-deck rectangular patch unit at 30GHz in the presence of cross oscillator unit；
Fig. 8 is the structural schematic diagram of the four frequency microstrip reflection array antennas of the present invention；
Fig. 9 is antenna pattern when four frequency microstrip reflection array antennas of the invention are operated in 9GHz；
Figure 10 is antenna pattern when four frequency microstrip reflection array antennas of the invention are operated in 13.58GHz；
Figure 11 is antenna pattern when four frequency microstrip reflection array antennas of the invention are operated in 24GHz；
Figure 12 is antenna pattern when four frequency microstrip reflection array antennas of the invention are operated in 30GHz.
Specific implementation mode
In conjunction with attached drawing, the invention will be further described.
As shown in figure 8, the four frequency microstrip reflection array antenna of one kind of the present invention, including：Feed and microstrip reflection array, institute
It is pyramidal horn antenna to state feed, and the microstrip reflection array includes multiple evenly distributed single layer cross oscillator units and double
Layer rectangular patch unit.Wherein, multiple single layer cross oscillator units are transversely arranged embarks on journey, and longitudinal arrangement is in column；Each single layer
There are four the double-deck rectangular patch unit, center and its phases of the cross oscillator unit for the surrounding distribution of cross oscillator unit
The center distance having the same of the double-deck rectangular patch unit of adjacent four.The working frequency of the antenna be respectively 9GHz,
13.58GHz, 24GHz and 30GHz, the direction that the single layer cross oscillator unit is intersected by two work in 9GHz respectively
And 13.58GHz, the direction that the double-deck rectangular patch unit is intersected by two work in 24GHz and 30GHz respectively.
The various pieces in the four frequencies microstrip reflection array antenna are described further below.
Fig. 1 is the structural schematic diagram of microstrip reflection array surface.As shown in Figure 1, in the different location of microstrip reflection array
Place, the size of each unit have differences that (wherein, the size of single layer cross oscillator unit includes cross oscillator
Length, such as the L in Fig. 21、L2；The size of the double-deck rectangular patch unit includes the size of its contained double-layer paster, in Fig. 3
a1, b1, a2, b2), this is because the distance of unit is different at different location on feed to microstrip reflection array, cause to send out from feed
The wave gone out reaches and generates phase difference at microstrip reflection array surface each unit, and reflectarray antenna realizes focus beam requirement
Wave phase having the same after being reflected through microstrip reflection array each unit, therefore compensated by adjusting the size of unit
The phase difference that reflective array each unit is brought due to range difference so that microstrip reflective array row realize same be stacked in particular directions
Add.
When determining the size of unit at different location, it is anti-that micro-strip at each frequency is calculated using following formula first
Penetrating needs the phase value of compensation at array each unit position：
Wherein, k0It is the propagation constant in vacuum, the corresponding propagation constant of different frequencies is different；(xi,yi) it is i-th
The centre coordinate of unit；diRepresent the distance between feed phase center and i-th of unit；For radiation beam direction；
ΦR(xi,yi) it is exactly the phase compensated needed for i-th of unit.
After the phase value for obtaining compensating needed for the unit at each position of microstrip reflection array, at each frequency
Reflected phase curve can find out the size of each unit by linear difference algorithm.
Fig. 2 is the structural schematic diagram of single layer cross oscillator unit, which includes a cross oscillator and a medium
Substrate, metal floor；The cross oscillator is attached to the surface of the dielectric substrate.It is close to the lower surface of the dielectric substrate
On metal floor.The cross oscillator is made of metal material.Since single layer cross oscillator unit is in the directions x and y
Direction is mutual indepedent, it is possible to adjust size (the i.e. L of single layer cross oscillator unit both direction respectively1Or L2), allow one
The change in size in a direction realizes that the phase of another frequency is realized in the phase compensation of a frequency, the change in size in another direction
Position compensation, to realize two different working frequencies in different polarization directions using a unit.Being used in the present invention should
Unit realizes two working frequencies of 9GHz and 13.58GHz in two different polarization directions, wherein when incidence wave is that y polarizes
Single layer cross oscillator unit is operated in 9GHz, when incidence wave is that single layer cross oscillator unit is operated in when x polarizes
13.58GHz.The grid cycle p of the single layer cross oscillator unit is 13mm, dielectric constant 2.2, the size of unit
(L1、L2) be determined according to method previously；Cross oscillator width w, the dielectric substrate of single layer cross oscillator unit are thick
Degree h can be obtained by way of optimizing at the frequency point in working frequency, and the purpose of the optimization is so that single layer cross shakes
The reflection characteristic of subelement is preferable.As in an example, cross oscillator is both designed as 1mm in the width w of both direction, is situated between
Matter thickness h is designed as 1.5mm.If grid cycle or dielectric constant change, the width w and dielectric thickness h of cross oscillator
Value generally can also occur respective change, occurrence needs are determined by optimization.
Fig. 3 is the structural schematic diagram of the double-deck rectangular patch unit, as shown, the unit includes two layers of rectangular patch, i.e.,
Upper layer patch, lower layer's patch and dielectric substrate, metal floor.The upper layer patch is attached to the upper table of top dielectric substrate
Face, lower layer's patch are attached to the upper surface of layer dielectric substrate, and the lower surface of the layer dielectric substrate is tightly attached to metal floor
On.The rectangular patch is made of metal material.Since the double-deck rectangular patch unit is mutual indepedent in the directions x and the directions y, so
Size (a of rectangular patch unit both direction can be adjusted respectively1, b1, a2, b2), allow the change in size in one direction to realize
The change in size of the phase compensation of one frequency, another direction realizes the phase compensation of another frequency, to utilize one
Unit realizes two different working frequencies in different polarization directions.Using the unit in two different polarization in the present invention
Two working frequencies of 24GHz and 30GHz are realized in direction, wherein when incidence wave is that bilayer rectangular patch cell operation exists when y polarizes
24GHz, when incidence wave is x polarization, bilayer rectangular patch cell operation is in 30GHz.The grid week of the bilayer rectangular patch unit
Phase q be single layer cross oscillator unit grid cycle half, i.e. q=6.5mm, the double-deck rectangular patch unit overall thickness (on
The sum of the thickness of layer dielectric substrate and layer dielectric substrate) it is necessary for the thickness of above-mentioned single layer cross oscillator unit, i.e. h=h1
+h2The double-deck rectangular patch unit is both designed as 0.75mm, i.e. h1=h2 by=1.5mm per a layer thickness in one embodiment
=0.75mm, dielectric constant 2.2；The length of side of upper layer patch is k times of lower layer's patch length of side.That is a2=k*a1,b2=k*b1,
Wherein a1And b1The respectively length in the directions x and the directions y of lower layer's patch.a2And b2Respectively upper layer patch in the directions x and
The length in the directions y.Unit reflected phase curve is more smooth and reflected phase range is larger in order to make, and is obtained through parameter sweep analysis
The value for going out k is 0.65.
The reflection characteristic of above two unit is analyzed in high-frequency electromagnetic simulation software HFSS, when analysis considers
Mutual coupling between cross oscillator unit and the double-deck rectangular patch unit.Fig. 4 gives when the double-deck rectangular patch unit is deposited
When reflected phase curve of the cross oscillator unit at 9GHz；Fig. 5 gives ten in the presence of the double-deck rectangular patch unit
Reflected phase curve of the font oscillator unit at 13.58GHz；Fig. 6 gives the double-deck square in the presence of cross oscillator unit
Reflected phase curve of the shape chip unit at 24GHz；Fig. 7 gives the double-deck rectangular patch in the presence of cross oscillator unit
Reflected phase curve of the unit at 30GHz.Unit at these each positions of reflected phase curve combination microstrip reflection array
The phase value of required compensation, can be in the hope of the size of each unit.
As shown in figure 9, antenna pattern when working in 9GHz for four frequency microstrip reflection array antennas of the invention, this hair
In bright, when reflective array works in 9GHz, the polarization mode of work is the linear polarization in the directions y.It can be seen from the figure that when anti-
When penetrating array antenna and being operated in 9GHz, radiation gain 17.82dB.
As shown in Figure 10, radiation direction when 13.58GHz is worked in for four frequency microstrip reflection array antennas of the invention
Figure, in of the invention, when reflective array works in 13.58GHz, the polarization mode of work is the linear polarization in the directions x.It can from figure
To find out, when reflectarray antenna is operated in 13.58GHz, radiation gain 20.15dB.
As shown in figure 11, antenna pattern when 24GHz is worked in for four frequency microstrip reflection array antennas of the invention, this
In invention, when reflective array works in 24GHz, the polarization mode of work is the linear polarization in the directions y.It can be seen from the figure that
When reflectarray antenna is operated in 24GHz, radiation gain 26.47dB.
As shown in figure 12, antenna pattern when 30GHz is worked in for four frequency microstrip reflection array antennas of the invention, this
In invention, when reflective array works in 30GHz, the polarization mode of work is the linear polarization in the directions x.It can be seen from the figure that
When reflectarray antenna is operated in 30GHz, radiation gain 27.85dB.
Can be obtained by Fig. 9, Figure 10, Figure 11 and Figure 12, four frequency microstrip reflection array antennas of the invention 9GHz,
There is good radiance at 13.58GHz, 24GHz and 30GHz.
It should be noted last that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting.Although ginseng
It is described the invention in detail according to embodiment, it will be understood by those of ordinary skill in the art that, to the technical side of the present invention
Case is modified or replaced equivalently, and without departure from the spirit and scope of technical solution of the present invention, should all be covered in the present invention
Right in.
Claims (6)
1. a kind of four frequency microstrip reflection array antennas, which is characterized in that including：Feed and microstrip reflection array, the feed are
Pyramidal horn antenna, the microstrip reflection array include that multiple evenly distributed single layer cross oscillator units and the double-deck rectangle paste
Blade unit；Wherein,
Multiple single layer cross oscillator units are transversely arranged to embark on journey, and longitudinal arrangement is in column；Each single layer cross oscillator unit
Surrounding distribution is there are four the double-deck rectangular patch unit, the center of the cross oscillator unit four double-deck rectangles adjacent thereto
The center distance having the same of chip unit；The working frequency of the four frequencies microstrip reflection array antenna be respectively 9GHz,
13.58GHz, 24GHz and 30GHz, the direction that the single layer cross oscillator unit is intersected by two work in 9GHz respectively
And 13.58GHz, the direction that the bilayer rectangular patch unit is intersected by two work in 24GHz and 30GHz respectively；
The bilayer rectangular patch unit includes upper layer patch, lower layer's patch and two layer medium substrate, metal floor；It is described
Upper layer patch is attached to the upper surface of top dielectric substrate, and lower layer's patch is attached to the upper surface of layer dielectric substrate, institute
Layer dielectric substrate is stated to be attached on the metal floor；The rectangular patch is made of metal material；The bilayer rectangular patch
The grid cycle q of unit is the half of single layer cross oscillator unit grid cycle；The overall thickness of the double-deck rectangular patch unit with
The thickness of single layer cross oscillator unit is identical；Dielectric constant is 2.2；The length of side of upper layer patch is k times of lower layer's patch length of side；
The value of k is 0.65.
2. four frequencies microstrip reflection array antenna according to claim 1, which is characterized in that described in determining in the following way
The unit size size of single layer cross oscillator unit or the double-deck rectangular patch unit：
Being calculated first using following formula needs the phase value of compensation at microstrip reflection array each unit position at each frequency：
Wherein, k0It is the propagation constant in vacuum, the corresponding propagation constant of different frequencies is different；(xi,yi) it is i-th of unit
Centre coordinate；diRepresent the distance between feed phase center and i-th of unit；For radiation beam direction；ΦR
(xi,yi) it is exactly the phase compensated needed for i-th of unit；
After the phase value for obtaining compensating needed for the unit at each position of microstrip reflection array, in conjunction with the reflection at each frequency
Phase curve finds out the size of unit by linear difference algorithm.
3. four frequencies microstrip reflection array antenna according to claim 1, which is characterized in that the single layer cross oscillator list
Member includes：Cross oscillator, dielectric substrate, metal floor；The cross oscillator is attached to the surface of the dielectric substrate, institute
The lower surface for stating dielectric substrate is attached on the metal floor；The cross oscillator is made of metal material.
4. four frequencies microstrip reflection array antenna according to claim 3, which is characterized in that the single layer cross oscillator list
The grid cycle p of member is 13mm, and dielectric constant 2.2, width w of the cross oscillator in the directions x and the directions y is 1mm, medium
Substrate thickness h is 1.5mm.
5. four frequencies microstrip reflection array antenna according to claim 1, which is characterized in that when incidence wave is that y polarizes, institute
It states single layer cross oscillator unit and is operated in 9GHz, when incidence wave is that x polarizes, the single layer cross oscillator unit is operated in
13.58GHz。
6. four frequencies microstrip reflection array antenna according to claim 1, which is characterized in that when incidence wave is that y polarizes, institute
The double-deck rectangular patch cell operation is stated in 24GHz；When incidence wave is that x polarizes, the bilayer rectangular patch cell operation exists
30GHz。
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| CN106356626B (en) * | 2016-08-24 | 2019-08-16 | 江苏省东方世纪网络信息有限公司 | Array antenna |
| CN106911001B (en) * | 2017-02-09 | 2019-10-22 | 南京邮电大学 | A kind of dynamic multi-frequency multi-beam space arbitrary scan reflective array |
| CN108180820A (en) * | 2017-12-30 | 2018-06-19 | 北京工业大学 | A kind of omnidirectional's strain detecting method based on Circular microstrip patch antenna |
| CN108711679B (en) * | 2018-04-13 | 2020-05-12 | 南京邮电大学 | Tunable liquid plane reflection array antenna |
| CN109560373B (en) * | 2018-11-22 | 2020-11-03 | 中国人民解放军空军工程大学 | Reflective array antenna with low RCS characteristic |
| CN111786090B (en) * | 2020-07-06 | 2022-06-03 | 电子科技大学 | Planar broadband transmission array antenna based on liquid crystal adjustable material |
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| CN103887592A (en) * | 2014-03-13 | 2014-06-25 | 清华大学 | Plane reflection array antenna integrating solar panel and used for aircraft |
| CN104993246A (en) * | 2015-07-28 | 2015-10-21 | 中国科学院国家空间科学中心 | Method of realizing dual frequency and dual polarization by microstrip reflection array antenna |
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| WO2007051487A1 (en) * | 2005-11-03 | 2007-05-10 | Centre National De La Recherche Scientifique (C.N.R.S.) | A reflectarry and a millimetre wave radar |
| JP2013214862A (en) * | 2012-04-02 | 2013-10-17 | Mitsubishi Electric Corp | Antenna device |
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| CN103887592A (en) * | 2014-03-13 | 2014-06-25 | 清华大学 | Plane reflection array antenna integrating solar panel and used for aircraft |
| CN104993246A (en) * | 2015-07-28 | 2015-10-21 | 中国科学院国家空间科学中心 | Method of realizing dual frequency and dual polarization by microstrip reflection array antenna |
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