CN105514260A - Spinning logic device and electronic device comprising same - Google Patents
Spinning logic device and electronic device comprising same Download PDFInfo
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- CN105514260A CN105514260A CN201610064129.8A CN201610064129A CN105514260A CN 105514260 A CN105514260 A CN 105514260A CN 201610064129 A CN201610064129 A CN 201610064129A CN 105514260 A CN105514260 A CN 105514260A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Abstract
The invention relates to a spinning logic device and an electronic device comprising the same. The spinning logic device comprises a spinning Hall effect (SHE) layer, a magnetic tunnel junction and current wiring, wherein the SHE layer is made of conductive materials with the SHE and used for receiving first input current and second input current in the first direction, the magnetic tunnel junction is located on the SHE layer, the magnetic tunnel junction is provided with a free magnetic layer, a reference magnetic layer and a barrier layer located between the free magnetic layer and the reference magnetic layer, the free magnetic layer makes direct contact with the SHE layer, the current wiring extends in the second direction above the magnetic tunnel junction and is electrically connected to the magnetic tunnel junction, the second direction and the first direction intersect with each other, and the current wiring is used for receiving third input current so as to generate a magnetic field at the magnetic tunnel junction.
Description
Technical field
Present invention relates in general to spintronics, more particularly, relate to a kind of logical device and comprise the electronic equipment of this spin logical device of spinning.
Background technology
The digital logic device utilizing the electron spin characteristic of magnetic material to design is called spin logical device or magnetic logical device.Compared with common semiconductive logic device, this reconfigurable logical device based on spin-dependent transport characteristic have high frequency of operation, unlimited reprovision number of times, logical message non-volatile, radiation proof, with the advantage such as MAGNETIC RANDOM ACCESS MEMORY (MRAM) is compatible, be therefore considered to the strong candidate of the logical device of future generation of alternative conventional semiconductors logical device.
Fig. 1 illustrates a kind of spin logical device 100 of prior art, and its core cell is MTJ MTJ, and it comprises two ferromagnetic layer FM1 and FM2 and is positioned at insulative barriers layer I therebetween.There are three input line A, B and C above MTJ MTJ, and have two output line Out in the both sides up and down of MTJ MTJ.Two ferromagnetic layer FM1 and FM2 of MTJ MTJ have different coercive forces.Article three, the equal and opposite in direction of the input current on input line A, B and C.When on an only input line such as input line A during galvanization, the direction of magnetization of ferromagnetic layer FM1 and FM2 does not change; When two input lines such as input line A and B passing through the electric current of equidirectional simultaneously, the direction of magnetization only with less coercitive ferromagnetic layer such as ferromagnetic layer FM2 can overturn; When electric current all by equidirectional on three input line A, B and C, the direction of magnetization of two ferromagnetic layer FM1 and FM2 all overturns.Thus MTJ can be configured to 4 kinds of different initial conditions, wherein two kinds of parallel state, two kinds of anti-parallel state.When being in parallel state, the resistance of MTJ MTJ is lower; When being in anti-parallel state, the resistance of MTJ MTJ is higher.Like this, multiple different logic state can be obtained.The operation of magnetic logical device generally comprises two steps.The first step is setting steps, namely makes MTJ MTJ be in predetermined initial condition by applying electric current in input line; Second step is logical operational steps, namely in two or three input line, applies input current, two output lines applies output current to read the resistance (or voltage, electric current) of MTJ, carries out logical operation.
There is some shortcomings in the spin logical device of above-mentioned prior art.The first, it comprises too much wiring, and structure is very complicated, is not easy to manufacture.The second, because its Oersted magnetic field relying on electric current generation is completely to overturn the direction of magnetization of ferromagnetic layer, in order to produce enough strong Oersted magnetic field to realize upset, needs to apply very large electric current, therefore causing the energy consumption of logical device very high.The practical application of the spin logical device of above-mentioned drawbacks limit prior art.
Summary of the invention
One aspect of the present invention is to provide a kind of spin logical device, and it is one or more that it can overcome in the above-mentioned and other defect in prior art spin logical device.
Some embodiments of the present invention provide a kind of spin logical device, and comprising: logic gates SHE layer, it is made up of the electric conducting material with logic gates, and for receiving the first input current along first direction and the second input current; Be positioned at the MTJ on described SHE layer, the barrier layer that described MTJ has free magnetosphere, reference magnetosphere and is positioned at therebetween, wherein said free magnetosphere directly contacts described SHE layer; And extend along second direction above described MTJ and be electrically connected to the electric current wiring of described MTJ, described second direction is intersected with described first direction, and the wiring of described electric current is for receiving the 3rd input current with in generation magnetic field, described MTJ place.
In some instances, described second direction is perpendicular to described first direction.
In some instances, described free magnetosphere and described reference magnetosphere all have perpendicular magnetization.
In some instances, described first input current and described second input current are electric currents in the face of flowing in the face of described SHE layer, and the magnetic field acting in conjunction that described first input current and described second input current and described 3rd input current produce is to arrange the magnetized state of described MTJ.Described SHE layer and described electric current connect up also for applying to flow through the reading electric current of described MTJ to read the magnetized state of described MTJ, thus realize logical operation.
In some instances, described SHE layer is formed by the material being selected from the group comprising following material: Pt, Au, Ta, Pd, Ir, W, Bi, Pb, Hf, IrMn, PtMn, AuMn, Bi
2se
3, Bi
2te
3, Y, Nd, Sm, Eu, Gd, Te, Dy, Ho, Er and Tm, and their combination in any.
In some instances, described spin logical device is configured to logical AND gate, logic sum gate, logic inverter, logical AND not gate and logic OR not gate by arranging the size and Orientation of described first input current, described second input current and described 3rd input current.
Other embodiments of the present invention provide a kind of spin logical device, comprise: logic gates SHE bias layer, it is by having logic gates and the electric conducting material of magnetic bias can being provided to make, and for receiving the first input current along first direction and the second input current; Be positioned at the MTJ on described SHE bias layer, the barrier layer that described MTJ has free magnetosphere, reference magnetosphere and is positioned at therebetween, wherein said free magnetosphere directly contacts described SHE bias layer; And the reading of the side contrary with described SHE bias layer being connected to described MTJ is connected up, for applying the reading electric current flowing through described MTJ, wherein, described SHE bias layer is to described free magnetosphere applying along the bias magnetic field of described first direction.
In some instances, described SHE bias layer is made up of IrMn, PtMn or AuMn.
In some instances, described spin logical device is configured to and door or one of door and NOR gate by arranging the size and Orientation of described first input current and described second input current, or can be configured to not gate and NAND gate.
Other embodiments of the present invention provide a kind of spin logical device, comprise: logic gates SHE layer, it is made up of the electric conducting material with logic gates, and for receiving the first input current along first direction and the second input current along second direction, described first direction intersects with described second direction; Be positioned at the MTJ on described SHE layer, the barrier layer that described MTJ has free magnetosphere, reference magnetosphere and is positioned at therebetween, wherein said free magnetosphere directly contacts described SHE layer; And extend along third direction above described MTJ and be electrically connected to the electric current wiring of described MTJ, described third direction is vertical with the compound direction of described second direction with described first direction, and the wiring of described electric current is for receiving the 3rd input current with in generation magnetic field, described MTJ place.
In some instances, described first direction is vertical with described second direction
In some instances, described first input current and described second input current are electric currents in the face of flowing in the face of described SHE layer, and the magnetic field acting in conjunction that described first input current and described second input current and described 3rd input current produce is to arrange the magnetized state of described MTJ.Described SHE layer and described electric current connect up also for applying to flow through the reading electric current of described MTJ to read the magnetized state of described MTJ, thus realize logical operation.
In some instances, described spin logical device is configured to logical AND gate, logic sum gate, logic inverter, logical AND not gate and logic OR not gate by arranging the direction of described first input current, described second input current and described 3rd input current.
Other embodiments of the present invention provide a kind of spin logical device, comprise: logic gates SHE bias layer, it is by having logic gates and the electric conducting material of magnetic bias can being provided to make, and for receiving the first input current along first direction and the second input current along second direction, described first direction intersects with described second direction; Be positioned at the MTJ on described SHE bias layer, the barrier layer that described MTJ has free magnetosphere, reference magnetosphere and is positioned at therebetween, wherein said free magnetosphere directly contacts described SHE bias layer; And the reading of the side contrary with described SHE bias layer being connected to described MTJ is connected up, for applying the reading electric current flowing through described MTJ, wherein, described SHE bias layer applies the bias magnetic field along third direction to described free magnetosphere, and described third direction is on the compound direction of described first direction and described second direction.
In some instances, described SHE bias layer is made up of IrMn, PtMn or AuMn.
In some instances, described spin logical device is configured to logical AND gate and logic sum gate by arranging the direction of described first input current and described second input current, or is configured to logic inverter, logical AND not gate and logic OR not gate.
Other embodiments of the present invention provide a kind of electronic equipment, and it comprises any one in above-mentioned spin logical device.
In some instances, described electronic equipment is the one in mobile phone, laptop computer, desktop computer, flat computer, media player, personal digital assistant and Wearable electronic equipment.
Accompanying drawing explanation
Fig. 1 illustrates a kind of structural representation of spin logical device of prior art.
Fig. 2 illustrates the structural representation of the logical device that spins according to an embodiment of the invention.
Fig. 3 A, 3B, 3C, 3D and 3E illustrate the signature tune line chart of the various logic operation of the spin logical device of Fig. 2.
Fig. 4 illustrates the structural representation of the logical device that spins according to another embodiment of the present invention.
Fig. 5 illustrates the schematic plan of the logical device that spins according to another embodiment of the present invention.
Fig. 6 A, 6B, 6C, 6D and 6E illustrate the signature tune line chart of the various logic operation of the spin logical device of Fig. 5.
Fig. 7 illustrates the structural representation of the logical device that spins according to another embodiment of the present invention.
Embodiment
Below with reference to accompanying drawings one exemplary embodiment of the present invention is described.
Fig. 2 illustrates the structural representation of the logical device 200 that spins according to an embodiment of the invention.As shown in Figure 2, the logical device 200 that spins comprises MTJ 210 and logic gates (SHE) layer 220 be positioned at below MTJ 210 connects up 230 with the electric current be positioned at above MTJ 210.
SHE layer 220 can be connected to wiring to receive input current.Such as, as described in Figure 2 ,-Y the side of SHE layer 220 can have splicing ear 222 and 224 to receive the first input current I respectively
1with the second input current I
2, described first input current I
1with the second input current I
2be electric current in face, namely flow through the layer plane of SHE layer 220, and flow through non-perpendicular to layer plane.In the embodiment shown in Figure 2, the first input current I
1with the second input current I
2the sense of current identical, be along Y direction.Although not shown ,+Y the side of SHE layer 220 also can have two terminals to be used separately as the first input current I
1with the second input current I
2flow channel.SHE layer 220 can be formed by the conductor material with strong Quantum geometrical phase attribute, thus as input current such as I
1and/or I
2when flowing through SHE layer 220, due to logic gates, the surface of such conductor material can form spin polarized current, wherein the spin direction of electronics is regularly arranged, as in Fig. 2 around shown in the arrow of the band round dot of SHE layer 220, its orbicular spot represents electronics, arrow represents the spin direction of electronics, and produce the pure spin current flowed into conductor material from SHE layer 220, this spin current can apply magnetic torque to conductor material, thus affects the magnetic moment direction of conductor material.Although Fig. 2 shows the electric current I for+Y-direction
1and/or I
2, the spin direction of the electronics produced in SHE layer 220 surface is arranged clockwise, but depends on the concrete material of SHE layer 220, and this spin direction also can be arranged counterclockwise.The example with the conductor material of strong Quantum geometrical phase attribute that can be used for being formed SHE layer 220 includes but not limited to the metal or alloy of such as Pt, Au, Ta, Pd, Ir, W, Bi, Pb, Hf, IrMn, PtMn, AuMn and so on, such as Bi
2se
3and Bi
2te
3and so on topological insulator and the rare earth material etc. of such as Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Te, Dy, Ho, Er, Tm, Yi, Lu and so on, wherein Y, Nd, Sm, Eu, Gd, Te, Dy, Ho, Er and Tm are preferred, because they have stronger Quantum geometrical phase.Should be understood that the material that can be used for being formed SHE layer 220 is not limited to above-mentioned example, but other now the material that can show logic gates that is known or exploitation in the future all can be used for forming SHE layer 220.In addition, SHE layer 220 can also be formed by the random suitable combination of these materials.In some embodiments of the invention, the thickness of SHE layer 220 can in the scope of 0.5nm to 30nm, preferably in the scope of 0.6nm to 10nm, to provide good resistance characteristic and magnetic torque effect.
MTJ 210 to be arranged on SHE layer 220 and directly to contact with SHE layer 220.Specifically, MTJ 210 comprises free magnetosphere 212, with reference to magnetosphere 216 and at free magnetosphere 212 with reference to the barrier layer 214 between magnetosphere 216, and wherein free magnetosphere 212 is adjacent with SHE layer 220 and directly contact.Free magnetosphere 212 and all can being formed by ferromagnetic material with reference to magnetosphere 216, such as Co, Fe, Ni and comprise the alloy of Co, Fe, Ni, such as CoFe, NiFe, CoFeB etc.Free magnetosphere 212 can be formed by the ferromagnetic material had compared with low-coercivity, the magnetic moment of free magnetosphere 212 can be rotated along with external magnetic field relatively easily, and can be formed by the ferromagnetic material with higher coercivity with reference to magnetosphere 216, its magnetic moment is not easily rotated with external magnetic field.In certain embodiments, the magnetic moment with reference to magnetosphere 216 can be fixed, such as, fix by pinning structure or from pinning structure.In pinning structure, the magnetic moment that pinning layer (not shown) fixes reference magnetosphere 216 can be formed on reference magnetosphere 216.Pinning layer is generally formed by the antiferromagnet of such as IrMn and so on, and its thickness can in the scope of 1nm to 30nm.Or alternatively, can be formed with reference to magnetosphere 216 by the hard magnetic material with higher coercivity, or by regulating the thickness of reference magnetosphere 216 to obtain larger coercive force, now can omit pinning layer, therefore such structure is also referred to as from pinning structure.
Continue with reference to Fig. 2, free magnetosphere 212 and reference both magnetospheres 216 all can have vertically the magnetic moment of (perpendicular to layer plane, namely along Z-direction).In other words, free magnetosphere 212 and the easy magnetizing axis with reference to both magnetospheres 216 can be oriented in vertical direction (Z-direction).The thickness of free magnetosphere 212 can in the scope of 0.5nm to 16nm, preferably in the scope of 0.8nm to 8nm.Thickness with reference to magnetosphere 216 can in the scope of 0.5nm to 20nm, the scope of preferred 0.8nm to 10nm.
Although it should be understood that with the free magnetosphere of perpendicular magnetization with reference to magnetosphere be context-descriptive various embodiment of the present invention and example in specification, principle of the present invention can also be applied to free magnetosphere and have magnetized situation in face with reference to magnetosphere.Compared with magnetizing with in face, perpendicular magnetization allows MTJ to be formed as having less size, and then can improve the integrated level of device, because of but preferably.
Although describe the structure of MTJ 210 here with reference to Fig. 2, it will be understood by those skilled in the art that and can also carry out many changes to the structure of MTJ 210.Such as, although Fig. 2 shows MTJ 210 have rectangular patterns, MTJ 210 also can be patterned into other shapes, such as circular, oval, square, annular, other polygonal shape, etc.In addition, MTJ 210 also can be formed with more or less layer.The present invention is intended to amendment or the change of containing all these MTJ, as long as it drops in the scope of claims and equivalent thereof.
Electric current wiring 230 extends and is electrically connected to MTJ 210 above MTJ 210.In the embodiment shown in Figure 2, electric current wiring 230 can directly contact MTJ 210.In further embodiments, electric current wiring 230 can be formed in above MTJ 210, and is connected to MTJ 210 by such as conductive plunger.Bearing of trend and the input current I be applied on SHE layer 220 of electric current wiring 230
1and I
2direction intersect, preferred vertical.Such as, in the embodiment shown in Figure 2, input current I
1and I
2in the Y-axis direction, the bearing of trend of electric current wiring 230 is X-direction.In further embodiments, electric current wiring 230 bearing of trend can with electric current I
1and I
2direction become angle within the scope of 45-135 degree.From being appreciated that it is vertically preferred to the description of operating principle below, but when intersecting, also important formation in vertical direction, is therefore also feasible.
The operating principle of spin logical device 200 is described referring to Fig. 2.As previously mentioned, as electric current such as I
1and/or I
2when flowing through SHE layer 220, due to logic gates, can produce the spin current flowing into free magnetosphere 212 from SHE layer 220, this spin current applies magnetic torque to free magnetosphere 212, thus affects the magnetic moment direction of free magnetosphere 212.Meanwhile, electric current I is applied to electric current wiring 230
3, it produces oersted field Hx at free magnetosphere 212 place, and this oersted field Hx applies magnetic torque to free magnetosphere 212 equally.Under the acting in conjunction of the magnetic torque that the spin current caused at logic gates applies and the magnetic torque that oersted field Hx applies, the magnetic moment of free magnetosphere 212 can be made to overturn.By regulating input current I
1and I
2or electric current I
3direction, the Magnetic moment reversal of free magnetosphere 212 can be made on the direction wanted, such as+Z-direction or-Z-direction.In this embodiment, the oersted field coordination that the spin current produced owing to utilizing logic gates and electric current wiring produce overturns the magnetic moment of free magnetosphere 212, so the electric current total amount needed for magnetic moment of the free magnetosphere 212 of upset can be reduced, and enormously simplify the structure of spin logical device.On the other hand, when utilizing spin current and oersted field coordination to overturn the magnetic moment of free magnetosphere 212, the contribution of often kind of factor can be regulated, thus bring operational more flexibilities.
Fig. 3 A, 3B, 3C, 3D and 3E illustrate the signature tune line chart of the various logic operation of the spin logical device 200 of Fig. 2.Below with reference to Fig. 3 A-3E and composition graphs 2 describe in detail spin logical device 200 various logic operation.
Fig. 3 A illustrates that spin logical device 200 is configured to logical AND " AND " door to carry out signature tune line chart when logical AND " AND " operates, and table 1 below illustrates the truth table of logical AND " AND " door.In order to realize logical AND operation, MTJ 210 can be configured to and is initially in parastate.During logical AND operation, electric current wiring 230 can be applied with electric current I
3such as, to produce less magnetic field at free magnetosphere 212 place, the 500Oe shown in Fig. 3 A.Should be understood that during logical AND operation, electric current I
3can be applied in electric current wiring 230 always, can also only at applying first input current I
1with the second input current I
2in time, just applies, to save energy consumption.
Table 1: the truth table of logical AND " AND "
| Input current I 1 | Input current I 2 | Export |
| 1 | 1 | 1 |
| 1 | 0 | 0 |
| 0 | 1 | 0 |
| 0 | 0 | 0 |
In the operation of from left to right first shown in Fig. 3 A, the first input current I that SHE layer 210 applies
1with the second input current I
2be forward big current, it corresponds to logic state " 1 ".Under the effect of these two big current, simultaneously under the cooperation in the magnetic field of 500Oe, the magnetic moment of free magnetosphere 212 overturns, and makes MTJ 210 become antiparallel state.Then, can connect up between 230 and SHE layer 210 at electric current and apply to flow vertically through the reading electric current I of MTJ 210
4, the resistance obtaining MTJ 210 is high-impedance state, and it may correspond in such as logical one.
Before or after carrying out logical operation, reset operation can be carried out so that MTJ 210 is reset to initial condition at every turn.In the example shown in Fig. 3 A, reset operation is by applying reverse big current I
1and I
2, and coordinating the oersted field of 500Oe to realize, MTJ 210 is returned to initial parallel state by it.
In the operation of from left to right second shown in Fig. 3 A, the first input current I that SHE layer 210 applies
1be still forward big current, it corresponds to logic state " 1 ", and the second input current I
2for forward small area analysis, it corresponds to logic state " 0 ".Because an input current is small area analysis, even if under the cooperation in the magnetic field of 500Oe, the magnetic moment of free magnetosphere 212 can not be made to overturn, and therefore MTJ 210 still remains initial parastate.Therefore, when applying the reading electric current I flowing vertically through MTJ 210 between electric current wiring 230 and SHE layer 210
4time, the resistance obtaining MTJ 210 is low resistance state, and it may correspond in such as logical zero.
Similarly, in the 3rd operation, the first input current I
1for forward small area analysis and the second input current I
2for forward big current, and in the 4th operation, the first input current I
1with the second input current I
2be forward small area analysis, the magnetic moment of free magnetosphere 212 now all can not be made to overturn, and thus MTJ 210 is in low resistance state, corresponding to logical zero.
As mentioned above, the logical device 200 that spins completes logical AND " AND " operation shown in table 1.During logical AND " AND " operation, due to electric current I
3the oersted field provided is less, so as the first input current I
1with the second input current I
2in any one when being small area analysis (corresponding to logical zero), all can not by MTJ 210 from initial parallel state turnover to antiparallel state.In other words, as the first input current I
1with the second input current I
2when being big current (corresponding to logical one), could by MTJ 210 from initial parallel state turnover to antiparallel state.
Fig. 3 B illustrates the signature tune line chart that logic OR " OR " operates, and table 2 illustrates the truth table of logic OR " OR ".In order to realize logic OR operation, MTJ 210 can be configured to and is initially in parastate.During logic OR operation, electric current wiring 230 can be applied with electric current I
3such as, to produce larger magnetic field at free magnetosphere 212 place, the 3500Oe shown in Fig. 3 B.Should be understood that during logic OR operation, electric current I
3can be applied in electric current wiring 230 always, can also only at applying first input current I
1with the second input current I
2in time, just applies, to save energy consumption.
Table 2: the truth table of logic OR " OR "
| Input current I 1 | Input current I 2 | Export |
| 1 | 1 | 1 |
| 1 | 0 | 1 |
| 0 | 1 | 1 |
| 0 | 0 | 0 |
In the operation of from left to right first shown in Fig. 3 B, the first input current I that SHE layer 210 applies
1with the second input current I
2be forward big current, it corresponds to logic state " 1 ".Under the effect of these two big current, simultaneously under the cooperation in the magnetic field of 3500Oe, the magnetic moment of free magnetosphere 212 overturns, and makes MTJ 210 become antiparallel state.Then, can connect up between 230 and SHE layer 210 at electric current and apply to flow vertically through the reading electric current I of MTJ 210
4, the resistance obtaining MTJ 210 is high-impedance state, and it may correspond in such as logical one.
Equally, before or after carrying out logical operation, reset operation can be carried out so that MTJ 210 is reset to initial condition at every turn.In the example shown in Fig. 3 B, reset operation is by applying reverse big current I
1and I
2, and coordinating the oersted field of 3500Oe to realize, MTJ 210 is returned to initial parallel state by it.
In the operation of from left to right second shown in Fig. 3 B, the first input current I that SHE layer 210 applies
1be still forward big current, it corresponds to logic state " 1 ", and the second input current I
2for forward small area analysis, it corresponds to logic state " 0 ".Although an input current is small area analysis, the Oersted magnetic field produced due to electric current I 3 is enough large, and be 3500Oe in this example, so be still enough to make the magnetic moment of free magnetosphere 212 overturn, thus MTJ 210 becomes antiparallel state.Therefore, when applying the reading electric current I flowing vertically through MTJ 210 between electric current wiring 230 and SHE layer 210
4time, the resistance obtaining MTJ 210 is high-impedance state, corresponding to logical one.
Similarly, in the 3rd operation, the first input current I
1for forward small area analysis and the second input current I
2for forward big current, under the cooperation in the large magnetic field of 3500Oe, be enough to the magnetic moment of free magnetosphere 212 is overturn, thus MTJ 210 becomes antiparallel state.Therefore, when applying the reading electric current I flowing vertically through MTJ 210 between electric current wiring 230 and SHE layer 210
4time, the resistance obtaining MTJ 210 is high-impedance state, corresponding to logical one.
In the 4th operation, the first input current I
1with the second input current I
2be forward small area analysis.In this case, even if electric current I
3the Oersted magnetic field produced is comparatively large, and be 3500Oe in this example, the magnetic moment of free magnetosphere 212 can not be made to overturn, and thus MTJ 210 remains initial parastate.When applying the reading electric current I flowing vertically through MTJ 210 between electric current wiring 230 and SHE layer 210
4time, the resistance obtaining MTJ 210 is low resistance state, and it may correspond in such as logical zero.
As mentioned above, the logical device 200 that spins completes logic OR " OR " operation shown in table 2.During logic OR " OR " operation, due to electric current I
3the oersted field provided is comparatively large, so as the first input current I
1with the second input current I
2in any one when being big current (corresponding to logical one), be just enough to MTJ 210 from initial parallel state turnover to antiparallel state.Only have as the first input current I
1with the second input current I
2when both are small area analysis (corresponding to logical zero), just can not by MTJ 210 from initial parallel state turnover to antiparallel state.
Fig. 3 C illustrates the signature tune line chart that logic NOT " NOT " operates, and table 3 illustrates the truth table of logic NOT " NOT ".In order to realize logic NOT operation, MTJ 210 can be configured to and is initially in antiparallel state.During logic NOT operation, electric current wiring 230 can be applied with reverse current I
3to produce the magnetic field of approximately-500Oe at free magnetosphere 212 place, the second input current I
2the larger current corresponding to logical one can be set to.Therefore, as shown in Figure 3 B, when first from left to right operates, the first input current I
1for corresponding to the larger current of logical one, cause the magnetic moment of free magnetosphere 212 to overturn, MTJ 210 becomes parastate, thus can obtain low resistance state in read step subsequently, corresponding to logical zero.In the operation of second from left to right, the first input current I
1for corresponding to the small electric stream of logical zero, thus MTJ 210 can not be made to be turned to parastate, in read step subsequently, obtaining high-resistance state, corresponding to logical one.Thus, the logical device 200 that spins completes logic NOT " NOT " operation shown in table 3.
Table 3: the truth table of logic NOT " NOT "
| Input current I 1 | Export |
| 1 | 0 |
| 0 | 1 |
Fig. 3 D illustrates the signature tune line chart that logical AND non-" NAND " operates, and table 4 illustrates the truth table of logical AND non-" NAND ".As can be seen from Fig. 3 D and table 4, logical AND non-" NAND " operation of spin logical device 200 is similar to logical AND " AND " operation shown in Fig. 3 A and table 1 substantially, and difference is only that the initial condition of MTJ 210 is set to antiparallel state.Therefore, the operating procedure that no longer repeated description is detailed here.
Table 4: the truth table of logical AND non-" NAND "
| Input current I 1 | Input current I 2 | Export |
| 1 | 1 | 0 |
| 1 | 0 | 1 |
| 0 | 1 | 1 |
| 0 | 0 | 1 |
Fig. 3 E illustrates the signature tune line chart that logic OR non-" NOR " operates, and table 5 illustrates the truth table of logic OR non-" NOR ".As can be seen from Fig. 3 E and table 5, logic OR non-" NOR " operation of spin logical device 200 is similar to logic OR " OR " operation shown in Fig. 3 B and table 2 substantially, and difference is only that the initial condition of MTJ 210 is set to antiparallel state.Therefore, the operating procedure that no longer repeated description is detailed here.
Table 5: the truth table of logic OR non-" NOR "
| Input current I 1 | Input current I 2 | Export |
| 1 | 1 | 0 |
| 1 | 0 | 0 |
| 0 | 1 | 0 |
| 0 | 0 | 1 |
Described above is by regulating the first input current I
1with the second input current I
2size and the 3rd input current I
3size and Orientation, can by spin logical device 200 be operating as and these five kinds of doors of door, not gate or door, NAND gate and NOR gate.Therefore, of the present inventionly this embodiment offers programmable logic gate device and method of operation thereof.Compared with non-programmable conventional semiconductor logical device, logical device of the present invention has larger operating flexibility.
Fig. 4 illustrates the structural representation of the logical device 300 that spins according to another embodiment of the present invention.In the spin logical device 300 shown in Fig. 4, the parts identical with the spin logical device 200 shown in Fig. 2 indicate with identical Reference numeral, will omit detailed description here.
As shown in Figure 4, SHE layer 220 is replaced by SHE bias layer 320.As its name suggests, SHE bias layer 320 can not only show logic gates, and certain bias-field can also be provided to carry out the magnetic moment of biased free magnetosphere 212.Therefore, SHE bias layer 320 should have and have logic gates, and the material of bias magnetic field can be provided to make, and the example of such material includes but not limited to the antiferromagnet with logic gates of such as PtMn, IrMn, AuMn etc. and so on.Can magnetic control depositing operation or magnetic-field annealing technique be passed through, make SHE bias layer 320 can provide bias magnetic field Hb, and the direction of bias magnetic field Hb can be parallel to the first and second input current I
1, I
2or their compound direction is Y direction in the diagram.Utilize bias magnetic field Hb and electric current I
1, I
2the spin current produced, i.e. the magnetic moment of turning free magnetosphere 212, thus realize logical operation.With reference to the embodiment that Fig. 2 describes before its inversion principle is similar to, no longer repeated description herein.
Owing to providing bias magnetic field Hb by SHE bias layer 320, electric current is therefore no longer needed to connect up 230 to provide Oersted magnetic field.In the embodiment shown in fig. 4, the logical device 300 that spins comprises the reading wiring 330 being connected to MTJ 210.Should be understood that because do not need to read wiring 330 to form Oersted magnetic field, can arrange along any direction so read wiring 330, and be not limited to the direction shown in Fig. 4.Utilize the reading wiring 330 and SHE bias layer 320 that are formed in MTJ about 210 both sides, the reading electric current I flowing through MTJ 210 can be applied
4, thus obtain the logic state of MTJ 210.
Compared with the spin logical device 200 shown in Fig. 2, the spin logical device 300 of Fig. 4 can only operate under fixing bias magnetic field Hb, therefore decreases on configuration flexibility.Such as, as previously mentioned, by regulating the size and Orientation of magnetic field Hx, the spin logical device 200 of Fig. 2 can be configured to, non-or, and not sum or these five kinds of doors non-.And the bias magnetic field Hb provided due to SHE bias layer 320 is fixing, its size and Orientation can not be regulated, so spin logical device 300 can only be configured to separately and door or one of door and NOR gate, or can be configured to not gate and NAND gate.
Fig. 5 illustrates the schematic plan of the logical device 400 that spins according to another embodiment of the present invention.In the spin logical device 400 shown in Fig. 5, the parts similar to the spin logical device 200 shown in Fig. 2 indicate with corresponding Reference numeral, no longer carry out repeated description to it herein.
As shown in Figure 5, the logical device 400 that spins comprises MTJ 410 and logic gates (SHE) layer 420 be positioned at below MTJ 410 connects up 430 with the electric current be positioned at above MTJ 410.The materials and structures of these elements is similar with the element in spin logical device 200, no longer repeated description herein.
Unlike, as shown in Figure 5, SHE layer 420 receives the first input current I1 and the second input current I2 of different directions.Specifically, SHE layer 420 can have the first and second terminals 422,424 to receive the first input current I along first direction (for X-direction in Fig. 5)
1, and there is the third and fourth terminal 426,428 to receive the second input current I along second direction (for the Y direction perpendicular to X-axis in Fig. 5)
2.First direction and second direction can be intersected, such as, angle between becoming 60 degree to 120 degree, and the angle between preferably becoming 75 degree to 105 degree is more preferably perpendicular to one another as shown in Figure 5.Therefore, electric current I is worked as
1and I
2during equal and opposite in direction, the resultant current I in SHE layer 420
1+2can roughly be located on the third direction of first direction and second direction middle, be in Fig. 5 on the Y' axle of X-axis and Y-axis middle.
Electric current wiring 430 can be the fourth direction that third direction is vertical extends, and is X' direction of principal axis in Fig. 5.Like this, when in electric current wiring 430 by the 3rd input current I3 time, according to right-hand screw rule, can MTJ 410 place generation at it under along the Oersted magnetic field Hx of third direction (Y' direction of principal axis).Therefore, based on the principle similar with Fig. 2, the first and second input current I
1, I
2coordinate with the Oersted magnetic field Hx that the 3rd input current produces, the magnetic moment of the free magnetosphere namely in turning MTJ 410.It should be understood that, the inversion principle shown in Fig. 5 is not identical with Fig. 2.Specifically, what the Magnetic moment reversal of Fig. 2 utilized is damping shape torque (Damping-liketorque), and the Magnetic moment reversal of Fig. 5 is except utilizing the torque of damping shape, also use a shape torque (Field-liketorque), it is two expression items that LLG equation comprises respectively, no longer launches deeply to discuss to this here.In addition, such as, by applying the reading electric current flowing through MTJ 410, the electric current I shown in Fig. 2 between electric current wiring 430 and SHE layer 420
4, namely can read the logic state of MTJ 410.
The operation of spin logical device 400 is described below with reference to Fig. 6 A, 6B, 6C, 6D and 6E.It should be noted that in the operation described at Fig. 3 A-3E, is according to input current I
1and I
2size define logical one and " 0 ", and in the operation shown in Fig. 6 A-6E, be then define logical one and " 0 " according to sense of current, specifically, be logical one by the current definition of the positive direction shown in Fig. 5, and be logical zero by its rightabout current definition.
Fig. 6 A illustrates that logical AND " AND " operates.In this operation, MTJ 410 is initially in logic state " 0 ", and it such as corresponds to anti-parallel state, and the 3rd input current I in electric current wiring 430
3the Oersted magnetic field Hx of about 1200Oe is produced at MTJ 410 place.As shown in Figure 6A, as the first and second input current I
1, I
2when being logical one, MTJ 410 can be turned to the parallel state corresponding with logical one; As the first and second input current I
1, I
2in any one for logical one and another is logical zero (reverse current) time, the resultant current of the two is on the direction vertical with Oersted magnetic field Hx, and therefore MTJ 410 remains on initial logical zero state; As the first and second input current I
1, I
2when being logical zero, then MTJ 410 can be reset to initial logical zero state.Therefore, logical AND operation is completed.
Fig. 6 B illustrates that logic OR " OR " operates.In this operation, MTJ 410 is initially in logic state " 1 ", and it such as corresponds to parallel state, and the 3rd input current I in electric current wiring 430
3the Oersted magnetic field Hx of about 1200Oe is produced at MTJ 410 place.As shown in Figure 6B, as the first and second input current I
1, I
2when being logical zero, MTJ 410 can be turned to the anti-parallel state corresponding with logical zero; As the first and second input current I
1, I
2in any one for logical one and another is logical zero time, the resultant current of the two is on the direction vertical with Oersted magnetic field Hx, and therefore MTJ 410 remains on initial logical one state; As the first and second input current I
1, I
2when being logical one, then MTJ 410 can be reset to initial logical one state.Therefore, logic OR operation is completed.
Fig. 6 C illustrates that logic NOT " NOT " operates.In this operation, MTJ 410 is initially in logic state " 0 ", and it such as corresponds to anti-parallel state, and the 3rd input current I in electric current wiring 430
3the Oersted magnetic field Hx of approximately-1200Oe is produced at MTJ 410 place.As shown in Figure 6 C, during operation, the second input current I
2logical zero state (reverse current) can be in, as the first input current I
1during for logical one, the resultant current of the two is on the direction vertical with Oersted magnetic field Hx, and therefore MTJ 410 remains on initial logical zero state; As the first input current I
1during for logical zero, then MTJ 410 can be turned to the parallel state corresponding with logical one.When carrying out reset operation, can by the first and second input current I
1, I
2all be set to logical one, thus MTJ 410 is reset to initial logical zero state.Therefore, logic NOT operation is completed.
Fig. 6 D shows logical AND non-" NAND " operation, and it is substantially similar that itself and Fig. 6 A illustrate that logical AND " AND " operates, and just MTJ 410 initial logic state is set to logical one, and by the 3rd input current I
3arrange in the reverse direction to produce rightabout Oersted magnetic field, in a reset operation MTJ 410 can be reset to initial logic state " 1 ".Fig. 6 E shows logic OR non-" NOR " operation, and it is substantially similar that itself and Fig. 6 B illustrate that logic OR " OR " operates, and just MTJ 410 initial logic state is set to logical zero, and by the 3rd input current I
3arrange in the reverse direction to produce rightabout Oersted magnetic field, in a reset operation MTJ 410 can be reset to initial logic state " 0 ".Therefore, will omit the detailed description operated shown in Fig. 6 D and 6E here.
Can be found out by foregoing description, similar with the spin logical device 200 shown in Fig. 2, the spin logical device 400 shown in Fig. 5 also can be configured to five kinds of gates, therefore identical hardware configuration can be become different logical circuits, achieve circuitry variability.But it should be noted that the operation shown in Fig. 6 A-6E only can regulate the direction of the first input current, the second input current and the 3rd input current, and do not regulate their size.
Fig. 7 illustrates the logical device 500 that spins according to another embodiment of the present invention.In the spin logical device 500 shown in Fig. 7, the parts identical with the spin logical device 400 shown in Fig. 5 indicate with identical Reference numeral, will omit detailed description here.
As shown in Figure 7, SHE layer 420 is replaced by SHE bias layer 520.As its name suggests, SHE bias layer 520 can not only show logic gates, and certain bias-field can also be provided to carry out the magnetic moment of the free magnetosphere 212 of biased MTJ 410.Therefore, SHE bias layer 520 should have and have logic gates, and the material of bias magnetic field can be provided to make, and the example of such material includes but not limited to the antiferromagnet with logic gates of such as PtMn, IrMn, AuMn etc. and so on.Can magnetic control depositing operation or magnetic-field annealing technique be passed through, make SHE bias layer 520 can provide the Hb of bias magnetic field in the desired direction, such as, Y' direction of principal axis shown in Fig. 7.Utilize bias magnetic field Hb and electric current I
1, I
2the spin current produced, i.e. the magnetic moment of turning free magnetosphere 212, thus realize logical operation.With reference to the embodiment that Fig. 5 describes before its inversion principle is similar to, no longer repeated description herein.
Owing to providing bias magnetic field Hb by SHE bias layer 520, electric current is therefore no longer needed to connect up 430 to provide Oersted magnetic field.In the embodiment shown in fig. 7, the logical device 500 that spins comprises the reading wiring 530 being connected to MTJ 410.Should be understood that because do not need to read wiring 530 to form Oersted magnetic field, can arrange along any direction so read wiring 530, and be not limited to the example direction shown in Fig. 7.Utilize the reading wiring 530 and SHE bias layer 520 that are formed in MTJ about 410 both sides, the reading electric current I flowing through MTJ 410 can be applied
4, thus obtain the logic state of MTJ 410.
Compared with the spin logical device 400 shown in Fig. 5, the spin logical device 500 of Fig. 7 can only operate under fixing bias magnetic field Hb, therefore decreases on configuration flexibility.Such as, as previously mentioned, by regulating the size and Orientation of magnetic field Hx, the spin logical device 400 of Fig. 5 can be configured to, non-or, and not sum or these five kinds of doors non-.And the bias magnetic field Hb provided due to SHE bias layer 520 is fixing, its size and Orientation can not be regulated, thus spin logical device 500 can only be configured to separately with door and or door, or be configured to not gate, NAND gate and NOR gate.
Other embodiments of the present invention also provide a kind of electronic equipment, and it can be such as but not limited to mobile phone, laptop computer, desktop computer, flat computer, media player, personal digital assistant and Wearable electronic equipment etc.Such electronic equipment generally all comprises such as controller, processor, memory etc., and these electronic units all include logical circuit, and these logical circuits all can utilize the spin logical device of previously described any embodiment to realize.
Although illustrated and described specific embodiment and the application of the application, but be appreciated that, described embodiment is not limited to here disclosed precise structure and assembly, and obvious various amendment, change and change to those skilled in the art can be made in the arrangement of the method and apparatus of the application, operation and details, and do not depart from the spirit and scope of the present disclosure as limited in the following claims.
Claims (18)
1. spin a logical device, comprising:
Logic gates SHE layer, it is made up of the electric conducting material with logic gates, and for receiving the first input current along first direction and the second input current;
Be positioned at the MTJ on described SHE layer, the barrier layer that described MTJ has free magnetosphere, reference magnetosphere and is positioned at therebetween, wherein said free magnetosphere directly contacts described SHE layer; And
Extend along second direction above described MTJ and be electrically connected to the electric current wiring of described MTJ, described second direction is intersected with described first direction, and the wiring of described electric current is for receiving the 3rd input current with in generation magnetic field, described MTJ place.
2. spin logical device as claimed in claim 1, and wherein, described second direction is perpendicular to described first direction.
3. spin logical device as claimed in claim 1, and wherein, described free magnetosphere and described reference magnetosphere all have perpendicular magnetization.
4. spin logical device as claimed in claim 1, wherein, described first input current and described second input current are electric currents in the face of flowing in the face of described SHE layer, and the magnetic field acting in conjunction that described first input current and described second input current and described 3rd input current produce is to arrange the magnetized state of described MTJ, and
Wherein, described SHE layer and described electric current connect up also for applying to flow through the reading electric current of described MTJ to read the magnetized state of described MTJ, thus realize logical operation.
5. spin logical device as claimed in claim 1, and wherein, described SHE layer is formed by the material being selected from the group comprising following material: Pt, Au, Ta, Pd, Ir, W, Bi, Pb, Hf, IrMn, PtMn, AuMn, Bi
2se
3, Bi
2te
3, Y, Nd, Sm, Eu, Gd, Te, Dy, Ho, Er and Tm, and their combination in any.
6. spin logical device as claimed in claim 1, wherein, described spin logical device is configured to logical AND gate, logic sum gate, logic inverter, logical AND not gate and logic OR not gate by arranging the size and Orientation of described first input current, described second input current and described 3rd input current.
7. spin a logical device, comprising:
Logic gates SHE bias layer, it is by having logic gates and the electric conducting material of magnetic bias can being provided to make, and for receiving the first input current along first direction and the second input current;
Be positioned at the MTJ on described SHE bias layer, the barrier layer that described MTJ has free magnetosphere, reference magnetosphere and is positioned at therebetween, wherein said free magnetosphere directly contacts described SHE bias layer; And
The reading being connected to the side contrary with described SHE bias layer of described MTJ is connected up, for applying the reading electric current flowing through described MTJ,
Wherein, described SHE bias layer is to described free magnetosphere applying along the bias magnetic field of described first direction.
8. spin logical device as claimed in claim 7, and wherein, described SHE bias layer is made up of IrMn, PtMn or AuMn.
9. spin logical device as claimed in claim 7, wherein, described spin logical device is configured to and door or one of door and NOR gate by arranging the size and Orientation of described first input current and described second input current, or can be configured to not gate and NAND gate.
10. spin a logical device, comprising:
Logic gates SHE layer, it is made up of the electric conducting material with logic gates, and for receiving the first input current along first direction and the second input current along second direction, described first direction intersects with described second direction;
Be positioned at the MTJ on described SHE layer, the barrier layer that described MTJ has free magnetosphere, reference magnetosphere and is positioned at therebetween, wherein said free magnetosphere directly contacts described SHE layer; And
Extend along third direction above described MTJ and be electrically connected to the electric current wiring of described MTJ, described third direction is vertical with the compound direction of described second direction with described first direction, and the wiring of described electric current is for receiving the 3rd input current with in generation magnetic field, described MTJ place.
11. spin logical device as claimed in claim 10, and wherein, described first direction is vertical with described second direction.
12. spin logical device as claimed in claim 10, wherein, described first input current and described second input current are electric currents in the face of flowing in the face of described SHE layer, and the magnetic field acting in conjunction that described first input current and described second input current and described 3rd input current produce is to arrange the magnetized state of described MTJ, and
Wherein, described SHE layer and described electric current connect up also for applying to flow through the reading electric current of described MTJ to read the magnetized state of described MTJ, thus realize logical operation.
13. spin logical device as claimed in claim 10, wherein, described spin logical device is configured to logical AND gate, logic sum gate, logic inverter, logical AND not gate and logic OR not gate by arranging the direction of described first input current, described second input current and described 3rd input current.
14. 1 kinds of spin logical devices, comprising:
Logic gates SHE bias layer, it is by having logic gates and the electric conducting material of magnetic bias can being provided to make, and for receiving the first input current along first direction and the second input current along second direction, described first direction intersects with described second direction;
Be positioned at the MTJ on described SHE bias layer, the barrier layer that described MTJ has free magnetosphere, reference magnetosphere and is positioned at therebetween, wherein said free magnetosphere directly contacts described SHE bias layer; And
The reading being connected to the side contrary with described SHE bias layer of described MTJ is connected up, for applying the reading electric current flowing through described MTJ,
Wherein, described SHE bias layer applies the bias magnetic field along third direction to described free magnetosphere, and described third direction is on the compound direction of described first direction and described second direction.
15. spin logical device as claimed in claim 14, and wherein, described SHE bias layer is made up of IrMn, PtMn or AuMn.
16. spin logical device as claimed in claim 14, wherein, described spin logical device is configured to logical AND gate and logic sum gate by arranging the direction of described first input current and described second input current, or is configured to logic inverter, logical AND not gate and logic OR not gate.
17. 1 kinds of electronic equipments, comprise the spin logical device described in any one in claim 1 to 16.
18. electronic equipments as claimed in claim 17, wherein, described electronic equipment is the one in mobile phone, laptop computer, desktop computer, flat computer, media player, personal digital assistant and Wearable electronic equipment.
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| CN201610064129.8A CN105514260B (en) | 2016-01-29 | 2016-01-29 | Spin logical device and include its electronic equipment |
| US15/256,262 US10153425B2 (en) | 2015-09-10 | 2016-09-02 | Spin logic device and electronic equipment including same |
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