CN105514208B - P-i-n junction photovoltaic device and preparation method in the carbon nanotube molecule of local constituency doping - Google Patents
P-i-n junction photovoltaic device and preparation method in the carbon nanotube molecule of local constituency doping Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 85
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 78
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 77
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 229920002873 Polyethylenimine Polymers 0.000 claims abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000002253 acid Substances 0.000 claims abstract description 10
- XCJXQCUJXDUNDN-UHFFFAOYSA-N chlordene Chemical compound C12C=CCC2C2(Cl)C(Cl)=C(Cl)C1(Cl)C2(Cl)Cl XCJXQCUJXDUNDN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 16
- 239000002109 single walled nanotube Substances 0.000 claims description 16
- 238000000609 electron-beam lithography Methods 0.000 claims description 12
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 11
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 11
- 239000002904 solvent Substances 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
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- 238000010894 electron beam technology Methods 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 125000003277 amino group Chemical group 0.000 abstract 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
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- 239000002238 carbon nanotube film Substances 0.000 description 4
- 238000004880 explosion Methods 0.000 description 4
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- 238000001259 photo etching Methods 0.000 description 3
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 238000007385 chemical modification Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
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- 230000007547 defect Effects 0.000 description 2
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical class CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- 150000003949 imides Chemical class 0.000 description 1
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- 229910021404 metallic carbon Inorganic materials 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
It is a kind of based on local constituency doping carbon nanotube molecule in p-i-n junction photovoltaic device and preparation method, the both ends of single-root carbon nano-tube are doped respectively using chlordene metaantimmonic acid triethyl group oxygen (OA) and polyethyleneimine (PEI), the middle section of carbon nanotube retains its reset condition.Since the carbon nanotube after chlordene metaantimmonic acid triethyl group oxygen doping has p-type semiconductor conductive characteristic, n-type semiconductor conductive characteristic is presented in carbon nanotube after polyethyleneimine amino-group doping, to successfully construct the p-i-n structure in the carbon nanotube molecule with strong built in field.There is the carbon nanotube of different radii by selecting, the photovoltaic device prepared by this intramolecular p-i-n junction, it can for different single-frequency light, can be used for white light test.
Description
Technical field
The present invention relates to a kind of technology of photovoltaic device production field, specifically a kind of carbon based on the doping of local constituency is received
Mitron intramolecular p-i-n junction photovoltaic device and preparation method thereof.
Background technique
Semi-conductive single-walled carbon nanotubes are a kind of one dimension semiconductor materials that photoelectric characteristic is excellent.Single-walled carbon nanotube
Band gap size is inversely proportional with radius, belongs to direct band-gap semicondictor, in infrared range of spectrum there is stronger light to inhale from ultraviolet
Receipts ability.Defect sturcture is not present in ideal single-walled carbon nanotube, is greatly lowered photo-generate electron-hole in this way to answering
Close probability.In addition, single-walled carbon nanotube has very high carrier mobility and mechanical strength.
After searching and discovering the prior art, single-walled carbon nanotube can be by as conductive material or transparent electrode material
Expect that fuel is sensitized solar cell etc. to improve the photoelectric conversion efficiency of some photovoltaic devices, such as organic photovoltaic cell.However,
The energy conversion efficiency of these devices is not still high, only has slightly compared with traditional device for not utilizing single-walled carbon nanotube
It improves.Photovoltaic device with high performance is made in order to make full use of the excellent characteristics of single-walled carbon nanotube, is needed single wall
Carbon nanotube makes photovoltaic device directly as light-sensitive material.
For photovoltaic device, the strong built in field that building is used to separate photo-generate electron-hole pair is crucial.Have one at present
A little methods are used to construct this built in field in single-walled carbon nanotube, mainly include electrostatic modification and chemical modification.Electrostatic
Modification needs to make the grid that buried layer is modified as electrostatic in the devices, cumbersome so as to cause complex process.Chemical modification is
Change the type of carrier in single-walled carbon nanotube using the method for chemistry, for example alkali metal can make p-type carbon nanotube portion
Ground is divided to be changed into N-shaped, to form the p-n junction of intramolecular.But utilize this device of alkali metal production in air at room temperature
It is unstable, it is difficult to apply in photovoltaic device.
After searching and discovering the prior art, Chinese patent literature CN101656278, open (bulletin) day
2010.02.24, a kind of preparation side of the solar micro battery based on unordered mesh carbon nanotube film of energy field is disclosed
Unordered mesh carbon nanotube film is prepared using self-assembling technique in method, using methane plasma selective etch method or
High current blows method removal metallic carbon nanotubes, obtains the unordered reticulated semiconductor carbon nano-tube film of large area as too
The light-sensitive material of positive energy micro cell.Using the metal with asymmetric work function respectively as device asymmetric electrode with partly lead
The contact of body carbon nanotube, is respectively formed unsymmetrical knot in the both ends contact position of semiconductor carbon nanometer tube, thus in single wall semiconductor
Strong built in field is formed in carbon nanotube, promotes photo-generate electron-hole to separation.But unordered mesh carbon nanotube film increases
Contact resistance between carbon nanotube and carbon nanotube, so that the excellent properties of carbon nanotube can not be played completely.In addition, non-
Symmetrical structure can not realize the regulation of photovoltaic performance well.
Summary of the invention
The present invention is in view of the above-mentioned defects in the prior art and insufficient, proposes a kind of carbon nanotube based on the doping of local constituency
Intramolecular p-i-n junction photovoltaic device and preparation method utilize chlordene metaantimmonic acid triethyl group oxygen (OA) and polyethyleneimine (PEI) point
The other both ends to single-root carbon nano-tube are doped, and the middle section of carbon nanotube retains its reset condition.Due to chlordene metaantimmonic acid
Carbon nanotube after triethyl group oxygen (OA) doping has p-type semiconductor conductive characteristic, the carbon after polyethyleneimine (PEI) doping
N-type semiconductor conductive characteristic is presented in nanotube, to successfully construct the p- in the carbon nanotube molecule with strong built in field
I-n structure.The photovoltaic device prepared by this intramolecular p-i-n junction, method is simple, and performance is stablized.
The invention is realized by the following technical scheme:
The present invention relates to a kind of preparation sides of p-i-n junction photovoltaic device in carbon nanotube molecule based on the doping of local constituency
Method, by making metal electricity using electron beam lithography and magnetron sputtering mode at the both ends for the carbon nanotube being positioned on substrate
Then pole by spin coating photoresist and selectively carries out p-type doping respectively to single-root carbon nano-tube both ends and N-shaped is mixed after exposure
It is miscellaneous, the intermediate reset condition (i) for retaining carbon nanotube undoped with part, so that p-i-n junction photovoltaic device be prepared.
The positioning is evaporated completely by that will be coated on substrate surface through the carbon nano-tube solution of ultrasonic disperse to solvent
Quan Hou is observed with scanning electron microscope substrate and is selected the carbon nanotube that length is 3 μm or more, by means of on substrate
The cross mark of pre-production positions carbon nanotube.
The carbon nanotube diameter is 0.8~1.8nm, and length is 2~5 μm.
The solvent of the carbon nano-tube solution uses and is singly not limited to the volatile solvent such as isopropanol, ethyl alcohol, methanol.
The carbon nano-tube solution is preferably 0.025mg/mL.
The cross mark can use mask lithography, and magnetron sputtering technique obtains.
The metal electrode is symmetrically or non-symmetrically electrode, preferably symmetrical Au electrode or Pd/Al asymmetric electrode etc..
The symmetrical Au electrode, with a thickness of 100nm, wherein Ti is prime coat, with a thickness of 10nm.
The width of the metal electrode is 0.5~1.5 μm, is 3~10 μm to interelectrode distance.
The electron beam lithography, using grating 10, voltage 20kv, line value 100；
The magnetron sputtering refers to: reaching the thickness of metal electrode by sputtering parameters such as regulation power, times
100nm。
The selectivity exposure refers to: applying electron beam resist on substrate, is received using electron beam lithography to carbon
One end of mitron carries out accurate exposure, in which: will be exposed on sky after the part that carbon nanotube is exposed is developed and fixing
In gas, unexposed part is by the protection by photoresist PMMA.
Two layers of the electron beam resist point.The PMMA photoresist of first layer molecular weight 495, thickness are about 200nm.The
The PMMA photoresist of two layers of molecular weight 950, thickness are about 100nm.It is required to carry out drying glue under high temperature after the every layer photoresist of spin coating.
The doping refers to: the device after exposure being soaked in chlordene metaantimmonic acid triethyl group oxygen solution (OA), exposure
Carbon nanotube one end outside will realize p-type doping, or the other end of carbon nanotube is carried out windowing exposure and is impregnated
N-type doping is realized in polyethylenimine solution (PEI), to obtain single-walled carbon nanotube intramolecular p-i-n junction photovoltaic device
Part, in which: the solvent of chlordene metaantimmonic acid triethyl group oxygen solution is dichloroethanes, and concentration is preferably 10mg/mL；The polyethylene
The solvent of imide liquor is methanol, and concentration is preferably 20wt%.
The window explosion size can be adjusted according to carbon length of tube used, generally 0.5*1 μm~1.5*3 μ
m。
P-i-n junction photovoltaic device in the carbon nanotube molecule being prepared the present invention relates to the above method, successively includes: device
Part layer, substrate SiO2Layer, silicon wafer layer and backgate layer, wherein device layer include: one by the area p, the area i and n district's groups at carbon nanometer
Manage and be set to the metal electrode at carbon nanotube both ends.
The present invention relates to the applications of p-i-n junction photovoltaic device in above-mentioned carbon nanotube molecule, are used for photovoltaic performance inspection
It surveys, specially single-frequency light detection and/or white light detection.
Technical effect
The p-i-n junction photovoltaic device that the present invention makes have the advantages that following characteristics and:
P-i-n junction photovoltaic device prepared by the present invention has excellent photovoltaic performance, and performance is stablized in air at room temperature.
The present invention prepares the method that nano-device uses chemical doping, maintains the integrality of carbon nanotube, involved work
Skill is simple, low in cost, and performance is stablized.
By selecting the carbon nanotube of different radii, the photovoltaic device of different absorption frequencies can be obtained.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of single-walled carbon nanotube intramolecular p-i-n junction photovoltaic device；
In figure: PEI doped region 1, OA doped region 2, the original undoped area i 3, Au electrode 4, SiO2Oxide layer 5, Si6, Au back
Grid 7.
Specific embodiment
Preparation method of the invention is described in detail with reference to the accompanying drawings and examples, but the present invention is not limited thereto
Example.
Embodiment 1
The present embodiment the following steps are included:
Carbon nano-tube solution through ultrasonic disperse is spun on substrate surface by the first step.After solvent volatilization completely, with sweeping
It retouches electron microscope and is observed substrate and selected the carbon nanotube that length is 5 μm, by means of ten of pre-production on substrate
Word mark positions carbon nanotube.
Second step makes Au symmetry electrode, electrode at carbon nanotube both ends using electron beam lithography and magnetron sputtering technique
Spacing is 3 μm.
Third step applies electron beam resist on substrate, is carried out using the one end of electron beam lithography to carbon nanotube
Window explosion, window size are 1 μm * 1 μm.The part (1 μm) that carbon nanotube is exposed it is developed and fixing after will be exposed
In air.Unexposed part (2 μm) is by the protection by photoresist PMMA.
Device is soaked in chlordene metaantimmonic acid triethyl group oxygen solution (OA) by the 4th step, is exposed to outer carbon nanotube one
End (1 μm) will realize p-type doping, then remove photoresist with acetone.
It applies photoresist PMMA again in the same way, the other end of carbon nanotube is subjected to windowing exposure, window
Having a size of 1 μm * 1 μm, and it is soaked in polyethylenimine solution (PEI) and realizes n-type doping.Photoetching is removed with acetone
Glue, the undoped carbon nanotube that intermediate length is 1 μm retains reset condition, to obtain single-walled carbon nanotube intramolecular p-
I-n ties photovoltaic device, as shown in Figure 1.
The 632nm single-frequency light for the photovoltaic device varying strength that the present embodiment is prepared is tested, with light intensity
Increase, the photogenerated current of device increases, and device shows good photovoltaic property.
Embodiment 2
The present embodiment the following steps are included:
Carbon nano-tube solution through ultrasonic disperse is coated on substrate surface by the first step.After solvent volatilization completely, with sweeping
It retouches electron microscope and is observed substrate and selected the carbon nanotube that length is 6 μm or more, by means of pre-production on substrate
Cross mark carbon nanotube is positioned.
Second step makes Au symmetry electrode, electrode at carbon nanotube both ends using electron beam lithography and magnetron sputtering technique
Spacing is 4 μm.
Third step applies electron beam resist on substrate, is carried out using the one end of electron beam lithography to carbon nanotube
Window explosion, window size are 1 μm * 1 μm.The part (1 μm) that carbon nanotube is exposed it is developed and fixing after will be exposed
In air.Unexposed part (3 μm) is by the protection by photoresist PMMA.
Device is soaked in chlordene metaantimmonic acid triethyl group oxygen solution (OA) by the 4th step, is exposed to outer carbon nanotube one
End (1 μm) will realize p-type doping, then remove photoresist with acetone.
It applies photoresist PMMA again in the same way, the other end of carbon nanotube is subjected to windowing exposure, window
Having a size of 1 μm * 1 μm, and it is soaked in polyethylenimine solution (PEI) and realizes n-type doping.Photoetching is removed with acetone
Glue, the undoped carbon nanotube that intermediate length is 2 μm retains reset condition, to obtain single-walled carbon nanotube intramolecular p-
I-n ties photovoltaic device.
The 632nm single-frequency light for the photovoltaic device varying strength that the present embodiment is prepared is tested.The results show that
With the increase in the area i, the photogenerated current of device increases, and shows that the area i can efficiently separate photo-generated carrier, changes i section length,
The optimization of device photovoltaic performance may be implemented.
Embodiment 3
The present embodiment the following steps are included:
Carbon nano-tube solution through ultrasonic disperse is coated on substrate surface by the first step.After solvent volatilization completely, with sweeping
It retouches electron microscope and is observed substrate and selected the carbon nanotube that length is 5 μm, by means of ten of pre-production on substrate
Word mark positions carbon nanotube.
Second step makes Pd electrode and Al electricity at carbon nanotube both ends using electron beam lithography and magnetron sputtering technique respectively
Pole, forms asymmetric electrode, and electrode spacing is 3 μm.
Third step applies electron beam resist on substrate, is carried out using the one end of electron beam lithography to carbon nanotube
Window explosion, window size are 1 μm * 1 μm.The part (1 μm) that carbon nanotube is exposed it is developed and fixing after will be exposed
In air.Unexposed part (2 μm) is by the protection by photoresist PMMA.
Device is soaked in chlordene metaantimmonic acid triethyl group oxygen solution (OA) by the 4th step, is exposed to outer carbon nanotube one
End (1 μm) will realize p-type doping, then remove photoresist with acetone.
It applies photoresist PMMA again in the same way, the other end of carbon nanotube is subjected to windowing exposure, window
Having a size of 1 μm * 1 μm, and it is soaked in polyethylenimine solution (PEI) and realizes n-type doping.Photoetching is removed with acetone
Glue, the undoped carbon nanotube that intermediate length is 1 μm retains reset condition, to obtain the single wall with asymmetric electrode
P-i-n junction photovoltaic device in carbon nanotube molecule.
The 632nm single-frequency light for the photovoltaic device varying strength that the present embodiment is prepared is tested, the results showed that,
The photogenerated current that device can be increased using asymmetric electrode, this is mainly due to the built-in electricity that asymmetric electrode increases device
?.
Above-mentioned specific implementation can by those skilled in the art under the premise of without departing substantially from the principle of the invention and objective with difference
Mode carry out local directed complete set to it, protection scope of the present invention is subject to claims and not by above-mentioned specific implementation institute
Limit, each implementation within its scope is by the constraint of the present invention.
Claims (1)
1. the preparation method of p-i-n junction photovoltaic device in a kind of carbon nanotube molecule of part constituency doping, which is characterized in that packet
Include following steps:
The first step by the carbon nano-tube solution spin coating through ultrasonic disperse or is coated on substrate surface；After solvent volatilization completely, use
Carbon nanotube is observed substrate and selected to scanning electron microscope, by means of the cross mark of pre-production on substrate to carbon
Nanotube is positioned；
Second step makes Au symmetry electrode, electrode spacing at carbon nanotube both ends using electron beam lithography and magnetron sputtering technique
It is 3 μm or 4 μm；Either Pd electrode and Al are made respectively at carbon nanotube both ends using electron beam lithography and magnetron sputtering technique
Electrode, forms asymmetric electrode, and electrode spacing is 3 μm；
Third step applies electron beam resist on substrate, carries out window using the one end of electron beam lithography to carbon nanotube
Exposure, window size are 1 μm * 1 μm；The part that carbon nanotube is exposed it is developed and fixing after will be exposed in air；
Unexposed part is by the protection by photoresist PMMA；
Device is soaked in chlordene metaantimmonic acid triethyl group oxygen solution by the 4th step, and p will be realized by being exposed to outer carbon nanotube one end
Type doping, then removes photoresist with acetone；
It applies photoresist PMMA again in the same way, the other end of carbon nanotube is subjected to windowing exposure, window size
It is 1 μm * 1 μm, and is soaked in polyethylenimine solution and realizes n-type doping；Photoresist, intermediate length are removed with acetone
Retain reset condition for 1 μm of undoped carbon nanotube, to obtain single-walled carbon nanotube intramolecular p-i-n junction photovoltaic device
Part or single-walled carbon nanotube intramolecular p-i-n junction photovoltaic device with asymmetric electrode.
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| CN1775667A (en) * | 2004-03-02 | 2006-05-24 | 国际商业机器公司 | Method and apparatus for solution processed doping of carbon nanotube |
| CN102823012A (en) * | 2010-03-04 | 2012-12-12 | 格尔德殿工业公司 | Electronic devices including transparent conductive coatings including carbon nanotubes and nanowire composites, and methods of making the same |
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|---|---|---|---|---|
| CN1775667A (en) * | 2004-03-02 | 2006-05-24 | 国际商业机器公司 | Method and apparatus for solution processed doping of carbon nanotube |
| CN102823012A (en) * | 2010-03-04 | 2012-12-12 | 格尔德殿工业公司 | Electronic devices including transparent conductive coatings including carbon nanotubes and nanowire composites, and methods of making the same |
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