CN105489774B - A kind of organic photosensitive devices of flexible double-sided xenogenesis light sensing - Google Patents
A kind of organic photosensitive devices of flexible double-sided xenogenesis light sensing Download PDFInfo
- Publication number
- CN105489774B CN105489774B CN201610044362.XA CN201610044362A CN105489774B CN 105489774 B CN105489774 B CN 105489774B CN 201610044362 A CN201610044362 A CN 201610044362A CN 105489774 B CN105489774 B CN 105489774B
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- Prior art keywords
- organic photosensitive
- organic
- sided
- photosensitive semiconductor
- flexible
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention discloses a kind of organic photosensitive devices of flexible double-sided xenogenesis light sensing, form top layer and underlying substrate by transparent flexible RF magnetron sputtering, intermediate layer substrate is opaque flexible RF magnetron sputtering.Structure between bottom and top layer is sequentially overlapped by tin indium oxide (ITO), organic photosensitive semiconductor B, nano metal thin layer, organic insulator, ITO, opaque flexible RF magnetron sputtering, ITO, organic insulator, nano metal thin layer, organic photosensitive semiconductor A, ITO from bottom to top.Wherein, nano metal thickness of thin layer is 1 nanometer, is to have good electric field transmitance and light transmission rate as electric current transport layer, the nano metal thin layer close to the metal material of 10 layers of atomic thickness.Organic photosensitive semiconductor A and organic photosensitive semiconductor B is the organic semiconducting materials to the photaesthesia of different wave length.Two-sided organic photosensitive semiconductor A and organic photosensitive semiconductor B can control to sense the light of different wave length respectively by applying electric field to opaque flexible RF magnetron sputtering.The device uses Grazing condition organic material, it can be achieved that prepared by low-cost large-area, and two-sided different light sensing is realized on the surface that can be attached at different shape object.
Description
【Technical field】
The present invention relates to flexible organic photosensitive devices, especially a kind of organic photosensitive device of flexible double-sided xenogenesis light sensing
Part.
【Background technology】
Conventional flex organic photosensitive devices are typically only capable to that single side is photosensitive, such as common organic photosensitive field-effect tube or photosensitive two
Pole pipe, photosensitive active layer only have single side energy sense light, can not at the same time two-sided sensing and distinguish different wave length light.And tradition has
The electric field permeability and photopermeability of machine light-sensitive device electrode are undesirable, these factors limit the further of organic photosensitive devices
Using.
Compared with traditional organic photosensitive devices, a kind of organic photosensitive device of flexible double-sided xenogenesis light sensing proposed by the present invention
Part, realizes the transmission of vertical direction electric field and optical transport based on nano metal thin layer, passes through middle opaque organic flexible substrate
Applying electric field can control two-sided organic photosensitive semiconductor A and organic photosensitive semiconductor B to sense the light of different wave length respectively.One
The organic photosensitive devices of kind of flexible double-sided xenogenesis light sensing use Grazing condition organic material, it can be achieved that prepared by low-cost large-area,
And the surface of different shape object can be attached at, realize two-sided different wavelengths of light, i.e. two-sided different light, light sensor.
【The content of the invention】
It is an object of the invention to overcome the shortcomings of traditional organic photosensitive devices, a kind of flexible double-sided xenogenesis light sensing is proposed
Organic photosensitive devices, it can be achieved that the sensing of two-sided different light, and possess the characteristics of flexible and large area.
Present disclosure：A kind of organic photosensitive devices of flexible double-sided xenogenesis light sensing are by transparent flexible RF magnetron sputtering structure
Into top layer and underlying substrate, intermediate layer substrate is opaque flexible RF magnetron sputtering.Structure between bottom and top layer is from bottom to top
By tin indium oxide (ITO), organic photosensitive semiconductor B, nano metal thin layer, organic insulator, ITO, the opaque organic lining of flexibility
Bottom, ITO, organic insulator, nano metal thin layer, organic photosensitive semiconductor A, ITO are sequentially overlapped.Wherein, nano metal thin layer
Thickness be 1 nanometer, be close to 10 layers of atomic thickness metal material be used as electric current transport layer, the nano metal thin layer have well
Electric field transmitance and light transmission rate.Organic photosensitive semiconductor A and organic photosensitive semiconductor B is the photaesthesia to different wave length
Organic semiconducting materials.
【Brief description of the drawings】
Fig. 1 is the structure diagram of the organic photosensitive devices of flexible double-sided xenogenesis light sensing.Wherein：1 has for transparent flexible
Machine substrate, 2 be ITO, and 3 be organic photosensitive semiconductor A, and 4 be organic photosensitive semiconductor B, and 5 be organic insulator, and 6 be nano metal
Thin layer, 7 be opaque flexible RF magnetron sputtering.
【Embodiment】
Preparation process of the present invention is as follows：
1) opaque flexible RF magnetron sputtering is cleaned with standard technology；
2) with CVD techniques on opaque flexible RF magnetron sputtering it is two-sided while prepare ITO；
3) with vacuum vapor deposition method on ITO it is two-sided while prepare organic insulator；
4) with vacuum vapor deposition method on organic insulator it is two-sided while prepare nano metal thin layer；
5) organic photosensitive semiconductor A and organic photosensitive semiconductor are prepared respectively on nano metal thin layer with vacuum vapor deposition method
B；
6) with CVD techniques on organic photosensitive semiconductor A and organic photosensitive semiconductor B it is two-sided while prepare ITO；
7) the transparent flexible RF magnetron sputtering on two-sided attaching high cleaning surface.
Claims (1)
- A kind of 1. organic photosensitive devices of flexible double-sided xenogenesis light sensing, it is characterised in that：It is made of transparent flexible RF magnetron sputtering Top layer and underlying substrate, intermediate layer substrate are opaque flexible RF magnetron sputtering；Structure between bottom and top layer from bottom to top by Tin indium oxide, organic photosensitive semiconductor B, nano metal thin layer, organic insulator, tin indium oxide, opaque flexible RF magnetron sputtering, Tin indium oxide, organic insulator, nano metal thin layer, organic photosensitive semiconductor A, tin indium oxide are sequentially overlapped；The nano metal thickness of thin layer is 1 nanometer, is the metal material close to 10 layers of atomic thickness；The organic photosensitive semiconductor A and organic photosensitive semiconductor B is the organic semiconducting materials to different wave length photaesthesia.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610044362.XA CN105489774B (en) | 2016-01-19 | 2016-01-19 | A kind of organic photosensitive devices of flexible double-sided xenogenesis light sensing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610044362.XA CN105489774B (en) | 2016-01-19 | 2016-01-19 | A kind of organic photosensitive devices of flexible double-sided xenogenesis light sensing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105489774A CN105489774A (en) | 2016-04-13 |
| CN105489774B true CN105489774B (en) | 2018-04-17 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610044362.XA Expired - Fee Related CN105489774B (en) | 2016-01-19 | 2016-01-19 | A kind of organic photosensitive devices of flexible double-sided xenogenesis light sensing |
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| Country | Link |
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| CN (1) | CN105489774B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101075662A (en) * | 2007-06-05 | 2007-11-21 | 北京交通大学 | Vertical field effect light-emitting tube with soruce electrode on bottom and its production |
| CN101101971A (en) * | 2007-07-04 | 2008-01-09 | 北京交通大学 | Full organic effect photoelectrical transistor with transparent two sides and its making method |
| CN101101972A (en) * | 2007-07-04 | 2008-01-09 | 北京交通大学 | Vertical structure organic field effect photoelectrical transistor based on pentacene and its making method |
| CN201213141Y (en) * | 2007-12-25 | 2009-03-25 | 西安海晶光电科技有限公司 | Double surface organic thin-film solar cell |
| CN105047728A (en) * | 2015-06-11 | 2015-11-11 | 上海电力学院 | Detector for improving light absorption efficiency of two-dimensional semiconductor crystal material and manufacturing method thereof |
| CN205488239U (en) * | 2016-01-19 | 2016-08-17 | 中国计量学院 | Organic light -sensitive device of flexible two -sided xenogenesis light sensing |
-
2016
- 2016-01-19 CN CN201610044362.XA patent/CN105489774B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101075662A (en) * | 2007-06-05 | 2007-11-21 | 北京交通大学 | Vertical field effect light-emitting tube with soruce electrode on bottom and its production |
| CN101101971A (en) * | 2007-07-04 | 2008-01-09 | 北京交通大学 | Full organic effect photoelectrical transistor with transparent two sides and its making method |
| CN101101972A (en) * | 2007-07-04 | 2008-01-09 | 北京交通大学 | Vertical structure organic field effect photoelectrical transistor based on pentacene and its making method |
| CN201213141Y (en) * | 2007-12-25 | 2009-03-25 | 西安海晶光电科技有限公司 | Double surface organic thin-film solar cell |
| CN105047728A (en) * | 2015-06-11 | 2015-11-11 | 上海电力学院 | Detector for improving light absorption efficiency of two-dimensional semiconductor crystal material and manufacturing method thereof |
| CN205488239U (en) * | 2016-01-19 | 2016-08-17 | 中国计量学院 | Organic light -sensitive device of flexible two -sided xenogenesis light sensing |
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| CN105489774A (en) | 2016-04-13 |
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Granted publication date: 20180417 Termination date: 20200119 |