CN105489720A - 一种氮化镓基led外延结构 - Google Patents
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 67
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 16
- 239000011777 magnesium Substances 0.000 claims description 12
- 239000012159 carrier gas Substances 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 229910021529 ammonia Inorganic materials 0.000 claims description 10
- 230000004907 flux Effects 0.000 claims description 10
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 5
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 230000000903 blocking effect Effects 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
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- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
本发明涉及一种氮化镓基LED外延结构,属于氮化物半导体发光器件的外延生长技术领域。一种氮化镓基LED外延结构,包括在衬底层上依次生长的GaN缓冲层、uGaN层、n型GaN:Si层、InGaN/GaN多量子阱层、p型AlGaN电子阻挡层和p型GaN:Mg层,其特征在于,在InGaN/GaN多量子阱层和p型AlGaN电子阻挡层之间插入一层厚度为5-100nm的低温p型InAlGaN层。本发明通过在InGaN/GaN多量子阱层和p型AlGaN电子阻挡层之间插入一层低温p型InAlGaN层,其生长温度为600-900℃,不会使在其之前生长的InGaN/GaN多量子阱层遭到破坏,从而避免了影响发光二极管的发光效率。
Description
技术领域
本发明涉及氮化物半导体发光器件的外延生长技术领域,特别涉及一种氮化镓基LED外延结构。
背景技术
随着半导体发光芯片发光效率的提升和制造成本的下降,半导体发光芯片已被广泛应用于背光、显示和照明等领域。
为了使LED能够应用于不同的领域,特别是环境恶劣的户外照明,对LED的可靠性,特别是以反向击穿电压为特征的抗静电能力提出了更高的要求。目前,LED的发光效率尽管己远大于其它光源的发光效率,但仍低于其理论最高值。显而易见,如果能通过改善LED芯片用的外延结构来提升其发光效率和抗静电能力有其广宽的实用价值和显著的社会效益和经济效益。
目前,氮化镓基LED外延结构主要是采用M℃VD技术生长在各种衬底表面。通常采用的结构如图1所示,为在外延衬底11表面依次生长的GaN缓冲层12、uGaN层13、n型GaN层14、InGaN/GaN多量子阱层15、p型AlGaN电子阻挡层16以及p型GaN层17。
如何实现高质量的p型AlGaN电子阻挡层的生长,将直接影响到外延层材料的质量和器件的性能。按照目前的LED生长技术存在反向击穿电压低和发光强度没有显著增强的缺陷。主要原因表现为:p型AlGaN电子阻挡层须在1000℃以上生长,而活性发光层InGaN/GaN多量子阱的生长温度为700℃至850℃,因此当活性发光层生长结束后温度升高到1000℃以上时,会使其低温生长的多量子阱结构遭到破坏,从而影响发光二极管的发光效率;再次,由于p型AlGaN的生长温度较高,加之Mg在高温下扩散系数增加很快,因此在p型AlGaN电子阻挡层高温生长的过程中,Mg将不可避免地向位于其下的InGaN/GaN多量子阱有源区中扩散,这又必将对发光二极管产生严重的影响。显而易见,通常采用的氮化镓基LED外延结构存在本质的缺陷。
发明内容
本发明的目的在于针对上述问题,提供了一种氮化镓基LED外延结构,能够显著提高LED芯片的反向击穿电压和发光效率。
本发明的目的是这样实现的:
一种氮化镓基LED外延结构,包括在衬底层上依次生长的GaN缓冲层、uGaN层、n型GaN:Si层、InGaN/GaN多量子阱层、p型AlGaN电子阻挡层和p型GaN:Mg层,其特征在于,在InGaN/GaN多量子阱层和p型AlGaN电子阻挡层之间插入一层厚度为5-100nm的低温p型InAlGaN层。
其中,所述低温p型InAlGaN层中铟铝合计组份含量不超过50%。
其中,所述低温p型InAlGaN层在氮化镓基LED外延结构中的掺杂浓度为1019-1021cm-3。
其中,所述低温p型InAlGaN层的生长方法为:
在InGaN/GaN多量子阱层生长结束后,生长一层厚度为5-100nm的低温p型InAlGaN层,生长温度在600-900℃之间,反应腔压力在10-200Torr之间,载气流量为5-40升/分钟,氨气流量为100-600摩尔/分钟,三甲基镓流量为80-400微摩尔/分钟,三甲基铟流量为400-600微摩尔/分钟,三甲基铝流量为20-100微摩尔/分钟,二茂镁流量为为0.5-5微摩尔/分钟,生长时间为1-10分钟。
本发明的有益效果为:在InGaN/GaN多量子阱层和p型AlGaN电子阻挡层之间插入一层低温p型InAlGaN层,其生长温度为600-900℃,不会使在其之前生长的InGaN/GaN多量子阱层遭到破坏,从而避免了影响发光二极管的发光效率;而且低温p型InAlGaN层中的铟、铝还可以起到提高发光二极管的发光强度的作用,进一步保证了发光二极管的发光效率。
附图说明
图1为传统的氮化镓基LED外延结构示意图。
图2为本发明中的氮化镓基LED外延结构示意图。
具体实施方式
下面结合具体实施例和附图,进一步阐述本发明。
如图2所示,一种氮化镓基LED外延结构,包括在衬底层21上依次生长的GaN缓冲层22、uGaN层23、n型GaN:Si层24、InGaN/GaN多量子阱层25、p型AlGaN电子阻挡层27和p型GaN:Mg层28,并且在InGaN/GaN多量子阱层25和p型AlGaN电子阻挡层27之间还插入了一层厚度为5-100nm的低温p型InAlGaN层26。具体为:在InGaN/GaN多量子阱层25的最后两个量子阱结构上,先于低温下生长一层厚度为5-100nm的p型InAlGaN层26,然后在该p型InAlGaN层26上生长p型AlGaN电子阻挡层27。
其中,低温p型InAlGaN层26中铟铝合计组份含量不超过50%,且该低温p型InAlGaN层26在氮化镓基LED外延结构中的掺杂浓度为1019-1021cm-3。
本发明中所述的氮化镓基LED外延结构,可以采用美国Veeco公司的M℃VDK300设备进行生长,具体以(0001)向蓝宝石(Al203)作衬底,利用高纯NH3作N源,高纯H2和N2的混合气体作载气,三甲基镓或三乙基镓作Ga源,三甲基铟作In源,三甲基铝作Al源,n型掺杂剂为硅烷,p型掺杂剂为二茂镁。
一种氮化镓基LED外延结构的生长方法具体包括如下步骤:
步骤一,在衬底层21上生长一层GaN缓冲层22,生长温度为500℃-800℃,反应腔压力为200-500Torr,载气流量为10-30升/分钟,三甲基镓流量为20-250微摩尔/分钟,氨气流量为20-80摩尔/分钟,生长时间为1-10分钟;
步骤二,在GaN缓冲层22生长结束后,生长一层uGaN层23,生长温度为950-1180℃,反应腔压力为76-250Torr,载气流量为5-20升/分钟,三甲基镓流量为80-400微摩尔/分钟,氨气流量为200-800摩尔/分钟,生长时间为20-60分钟;
步骤四,在uGaN层23生长结束后,生长一层n型GaN:Si层24,生长温度为950-1150℃,反应腔压力为76-250Torr,载气流量为5-20升/分钟,三甲基镓流量为80-400微摩尔/分钟,氨气流量为200-800摩尔/分钟,硅烷流量为0.2-2.0纳摩尔/分钟,时间为10-40分钟;
步骤五:在n型GaN:Si层24生长结束后,生长InGaN/GaN多量子阱层25,所述InGaN/GaN多量子阱层25包括4至15个周期数的依次交叠的InGaN阱层和GaN垒层;所述InGaN阱层的生长温度为700-850℃,反应腔压力为100-500Torr,载气流量为5-20升/分钟,氨气流量为200-800摩尔/分钟,三甲基镓流量为0.1-1.0微摩尔/分钟,三甲基铟流量为10-50微摩尔/分钟,时间为0.1-5分钟;所述GaN垒层的生长温度为700-900℃,反应腔压力为100-500Torr,载气流量为5-20升/分钟,氨气流量为200-800摩尔/分钟,三甲基镓流量为0.1-1.0微摩尔/分钟,硅烷流量为0.2-2.0纳摩尔/分钟;
步骤六,在InGaN/GaN多量子阱层生长结束后,生长一层厚度为5-100nm低温p型InAlGaN层26,生长温度在600-900℃之间,反应腔压力在10-200Torr之间,载气流量为5-40升/分钟,氨气流量为100-600摩尔/分钟,三甲基镓流量为80-400微摩尔/分钟,三甲基铟流量为400-600微摩尔/分钟,三甲基铝流量为20-100微摩尔/分钟,二茂镁流量为为0.5-5微摩尔/分钟,生长时间为1-10分钟;
步骤七,在低温p型InAlGaN层26生长结束后,生长一层p型AlGaN电子阻挡层27,生长温度为700-1000℃,反应腔压力为50-200Torr,载气流量为5-20升/分钟,氨气流量为100-400摩尔/分钟,三甲基铝流量为20-100微摩尔/分钟,三甲基镓流量为80-200微摩尔/分钟,二茂镁流量为150-400纳摩尔/分钟,时间为1-10分钟;
步骤八:在p型AlGaN电子阻挡层27生长结束后,生长一层p型GaN:Mg层28,生长温度为950-1100℃,反应腔压力为200-500Torr,载气流量为5-20升/分钟,氨气流量为200-800摩尔/分钟,三甲基镓流量为80-400微摩尔/分钟,二茂镁流量为为0.5-5微摩尔/分钟,时间为10-50分钟。
与传统的氮化镓基LED外延结构相比,本发明具有结构简单、生长方便,发光强度大,反向击穿电压高等特点。非常适用于制造发光效率高、反向击穿电高的氮化镓基LED外延片。
以上所述仅为本发明的实施例,并非因此限制本发明的专利范围,凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围内。
Claims (4)
1.一种氮化镓基LED外延结构,包括在衬底层上依次生长的GaN缓冲层、uGaN层、n型GaN:Si层、InGaN/GaN多量子阱层、p型AlGaN电子阻挡层和p型GaN:Mg层,其特征在于,在InGaN/GaN多量子阱层和p型AlGaN电子阻挡层之间插入一层厚度为5-100nm的低温p型InAlGaN层。
2.根据权利要求1所述的一种氮化镓基LED外延结构,其特征在于,所述低温p型InAlGaN层中铟铝合计组份含量不超过50%。
3.根据权利要求1所述的一种氮化镓基LED外延结构,其特征在于,所述低温p型InAlGaN层在氮化镓基LED外延结构中的掺杂浓度为1019-1021cm-3。
4.根据权利要求1所述的一种氮化镓基LED外延结构,其特征在于,所述低温p型InAlGaN层的生长方法为:
在InGaN/GaN多量子阱层生长结束后,生长一层厚度为5-100nm的低温p型InAlGaN层,生长温度在600-900℃之间,反应腔压力在10-200Torr之间,载气流量为5-40升/分钟,氨气流量为100-600摩尔/分钟,三甲基镓流量为80-400微摩尔/分钟,三甲基铟流量为400-600微摩尔/分钟,三甲基铝流量为20-100微摩尔/分钟,二茂镁流量为为0.5-5微摩尔/分钟,生长时间为1-10分钟。
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