CN105470811B - Tunable laser source - Google Patents
Tunable laser source Download PDFInfo
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- CN105470811B CN105470811B CN201510011996.0A CN201510011996A CN105470811B CN 105470811 B CN105470811 B CN 105470811B CN 201510011996 A CN201510011996 A CN 201510011996A CN 105470811 B CN105470811 B CN 105470811B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0078—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for frequency filtering
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
- G02B6/29346—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by wave or beam interference
- G02B6/2935—Mach-Zehnder configuration, i.e. comprising separate splitting and combining means
- G02B6/29352—Mach-Zehnder configuration, i.e. comprising separate splitting and combining means in a light guide
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
- G02B6/29346—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by wave or beam interference
- G02B6/2935—Mach-Zehnder configuration, i.e. comprising separate splitting and combining means
- G02B6/29352—Mach-Zehnder configuration, i.e. comprising separate splitting and combining means in a light guide
- G02B6/29355—Cascade arrangement of interferometers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
- G02B6/29379—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device
- G02B6/29389—Bandpass filtering, e.g. 1x1 device rejecting or passing certain wavelengths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
- G02B6/29379—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device
- G02B6/29395—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device configurable, e.g. tunable or reconfigurable
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1209—Sampled grating
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5045—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement having a frequency filtering function
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/02—ASE (amplified spontaneous emission), noise; Reduction thereof
Abstract
The present invention relates to a kind of tunable transmission optical filters, are optically coupled between the laser section of tunable laser light apparatus and semiconductor optical amplifier (SOA) section.The optical filter can be tuned to be provided about high-transmission in laser peak, while inhibit sizable part of the amplified spontaneous emission (ASE) of SOA sections of back-propagation.If after ASE is amplified and reflected forwards by laser gain section and reflecting mirror section, laser output spectrum may develop the secondary lobe of higher intensity without the optical filter.While reducing secondary lobe, the filter during transmission laser peak, to be amplified by the SOA sections.
Description
Technical field
This disclosure relates to light source, in particular to tunable laser source.
Background technique
In Wave division multiplexing (WDM) optical-fiber network, the optical signal at multiple wavelength is compiled with the digital stream of information
Code.These pass through the optical signal of coding, or " wavelength channel ", and a series of optical fiber for passing through spans carries out multiplex and transmission.It is connecing
Device end is received, those wavelength channels are by photoreceiver partial wave and detection.
Needing optical signal those of encoded is usually as provided by laser diode, each wavelength channel is by one
Laser diode provides.For redundancy purpose, it is desirable to provide the laser diode of backup.Due to making in intensive WDM (DWDM) transmission
With multiple wavelength (dozens of or even sometimes hundreds of wavelength), providing individual backup laser diode for each wavelength may become
It obtains extremely expensive and unbearable.Tunable laser source help solves the problems, such as this.
In restructural WDM optical-fiber network, tunable laser source is also proved to be valuable；In restructural WDM light
In network, when the network load grows, it is inserted into new wavelength channel.In such " wavelength agile " network, Ke Yidong
It is inserted into state (add) and separates (drop) wavelength channel, to be wanted in response to the fluctuating data bandwidth between different network node
It asks.In terms of the position of network structure, the tunable laser source for being tunable to any desired wavelength may be preferably formed with.It is such
Laser light source need be it is widely tunable, enough Output optical power can be provided, have strong Side mode suppressing, to avoid by
The coherent crosstalk of other wavelength channels.
A referring to Fig.1 shows the tunable laser source 100 of example prior-art.Such as in United States Patent (USP) US5,
In 325,392, Tuo Moli (Tohmori) et al. describes similar laser light source.Laser light source 100 includes optical series coupling
Back mirror 102, gain section 104, phase section 106 and the front mirror 108 of conjunction.The front mirror 108 and back mirror 102 wrap
Grating is included, grating has periodic reflectivity wavelength correlation function (periodic wavelength dependence of
reflectivity).Figure 1B is turned to, the exemplary wavelength correlation function 112 of the reflectivity of back mirror 102 is with 5.6nm's
Period.The wavelength correlation function 118 of the reflectivity of front mirror 108 has the period of bigger 6.3nm.Wavelength correlation function
112 and 118 peak value 112A, 118A is overlapped at 1550nm.Therefore, by by back mirror wavelength correlation function 112 multiplied by
Front mirror wavelength correlation function 118 and the product wavelength correlation function 130 obtained, have its maximum peak 1550nm at
Value.Product wavelength correlation function 130 is shown in fig. ib, is exaggerated four times.Product wavelength correlation function 130 be used for
The roundtrip gain of light of light circulation is carried out between the front mirror 108 and back mirror 102 of laser light source 100 (Figure 1A) at just
Than.Product wavelength correlation function 130 (Figure 1B) determines the wavelength emission characteristics of laser light source 100.Three marked with cross ("+")
A resonant cavity longitudinal mode 121,122 and 123 is superimposed upon on product reflectivity trace 130, be arranged on peak value 112A at 1550nm,
In the range of 118A.In 1544nm (134), nearby nearby there are other moulds 134,136 and 138 with 1556nm (136,138).
Among these moulds 121,122 and 123,134,136 and 138, only center die 122, which will lead to generate, has big optical power
Laser beam 109, this is because the roundtrip gain of light of center die 122 is much higher；In 121,123,134,136,138 wavelength of side mode
The optical power levels for locating transmitting are much lower.
By converting wavelength correlation function 112 and 118 in an opposite direction, laser light source 100 is tuned.Work as wave
When two other peak values of long correlation function 112,118 are overlapped at another wavelength, one of longitudinal mode at wavelength place occurs
Lasing.It substantially, is by much broader compared to the wave-length coverage being tuned in itself to individual reflecting mirror 102,108
Cursor effect (Vernier effect) is used in wave-length coverage, excitation wavelength is tuned.Wavelength is carried out in a stepwise manner
Tuning.By proper choice of the longitudinal mode spacing and reflectivity period of back mirror 102 and front mirror 108, people is allowed to limit
The required amplitude of the adjusting step-length of wavelength.
Referring now to Fig. 1 C, and Figure 1A is referred to, shows the amplification laser light source 150 in example prior-art.
Such as in United States Patent (USP) US6,788,719, Cloud (Crowder) describes similar laser light source.Amplify laser light source
150 laser light sources 100 and the integrated semiconductor optical amplifier (SOA) connected optically coupling to front mirror 108 including Figure 1A
130.The insertion of SOA 130 allows people to promote the output power of laser beam 109 to than in the laser light source 100 of Figure 1A
The much higher level of achievable output power.But SOA 130 generates other spontaneous emission noise.Further, since so-called
Gain tilt, the amplification of SOA 130 is spectrally non-uniform in the range of amplification band.Therefore, SOA 130 can
Side mode suppression ratio (SMSR) can be reduced to the amplification of the side mode of laser beam 109 being enlarged over to basic mode.For example, SMSR can
Can the 50dB from laser light source 100 be reduced to amplification laser light source 150 in be less than 40dB because excitation wavelength is remote
From gain spectra peak value.It is including answering for many that the tunable laser source of the optical-fiber network of wavelength agile is applied that SMSR, which is reduced,
It may be unacceptable in.In the prior art, in the Output optical power and light of widely tunable amplification laser light source
Have to trade off between spectral purity.
Summary of the invention
According to one embodiment of present invention, a kind of tunable transmission optical filter is optically coupled in tunable laser device
Laser section and SOA sections between.Because deviateing the substantially detuning excitation wavelength of gain peak wavelength, optical filter can be tuned to
There is high-transmission near excitation wavelength, may be additionally configured to that there is low transmission near gain peak.This is in optical filter stop-band
Nearby inhibit SOA back-propagation Amplified Spontaneous Emission (ASE), otherwise its will by laser mirror reflected frontward, and
Amplified by laser active section.The ASE of this retroeflection may be the main source that SMSR is reduced.In general, work as excitation wavelength
When offset peak gain is detuning farthest, at the minimal wave length of laser tunable range and/or longest wavelength, as caused by ASE
SMSR reduces maximum.In fact, tunable transmission optical filter is arranged between laser section and SOA, so that ASE inhibition doubles,
Lead to increaseing accordingly for SMSR.Preferably, laser section, tunable transmission optical filter and SOA sections be as single structure monolithically
It is formed, simplifies total structure, and eliminate reflection between the parts.
According to one embodiment of present invention, a kind of tunable laser device is provided comprising:
Tunable laser section is configured to generate light at excitation wavelength, wherein tunable laser includes light
Chamber is learned, is used to be tuned excitation wavelength within the tuning range from first wave length to second wave length, wherein the
Two wavelength are longer than first wave length；
Tunable transmission optical filter, is arranged on except optics cavity, and is arranged on the downstream of tunable laser section,
Wherein, tunable transmission optical filter includes:
Passband is configured to transmit light at excitation wavelength；And
Stop-band is configured to decay to light at the secondary lobe wavelength of tunable laser section, wherein secondary lobe wave
Length is different from excitation wavelength, and wherein, excitation wavelength and secondary lobe wavelength are within the tuning range；And
Semiconductor optical amplifier (SOA) section is optically coupled to tunable transmission optical filter, and is located at tunable transmission and filters
The downstream of light device, wherein semiconductor optical amplifier section has the amplification band including the tuning range.
In one exemplary embodiment, tunable transmission optical filter includes asymmetric mach-Zeng Deer (Mach-
Zehnder) waveguide interferometers are monolithically formed together with tunable laser and SOA sections.Mach-Zeng Deer Waveguide interference
Instrument is tunable at having transmission maximum value at excitation wavelength, alternatively, it is tunable at secondary lobe wavelength, for example, in stop-band
The heart has transmission minimum value.
According to one embodiment of present invention, it is further provided a kind of laser light source comprising above-mentioned tunable laser
Device device and controller, the controller are operatively coupled to tunable laser section, tunable transmission optical filter and half
Conductor image intensifer, wherein the controller is configured as:
Tune the excitation wavelength of tunable laser section；And
By adjusting the first tuner parameters of tunable transmission optical filter, to tune the tunable passband for transmitting optical filter
Central wavelength, so as to corresponding with excitation wavelength.
According to one embodiment of present invention, it is further provided a kind of for calibrating the side of tunable laser device
Method, the tunable laser device include the tunable laser section successively coupled, tunable transmission optical filter and semiconductor
Image intensifer section, which comprises
(a) excitation wavelength of tunable laser section is tuned to calibration wavelength, the calibration wavelength is in tunable laser
Within the tuning range of device section；
(b) after completing step (a), the central wavelength of the passband of tunable transmission optical filter is scanned；
(c) when executing step (b), the Output optical power or side mode suppression ratio of laser light source are determined；
(d) in the value of the central wavelength scanned in step (b), selection and the maximum output light determined in step (c)
Power or the corresponding value of maximum side mode suppression ratio；And
(e) value for the central wavelength that will be selected in step (d) is related to the calibration wavelength being tuned in step (a)
Connection.
A kind of method for generating light is further provided according to another aspect, comprising:
(a) tunable laser device is provided comprising the tunable laser section that successively couples, tunable transmission optical filtering
Device and semiconductor optical amplifier section；
(b) tunable laser section is motivated, and tunes the excitation wavelength of tunable laser section, is tuned to adjustable
The first operation wavelength within the tuning range of humorous laser section；
(c) passband center wavelengths of tunable transmission optical filter are tuned, to increase side mode suppression in the first operating wave strong point
Ratio processed；And
(d) semiconductor optical amplifier section is motivated.
Detailed description of the invention
Exemplary embodiment is described presently in connection with attached drawing, in which:
Figure 1A shows a kind of schematic block diagram of the tunable laser source of prior art；
Figure 1B shows the reflecting mirror reflectance spectrum of the laser light source in Figure 1A, is enlarged into 4 times of product spectrum, and vertical
Mould position；
Fig. 1 C shows a kind of schematic block diagram of the tunable amplification laser light source of prior art；
Fig. 2A shows the typical emission spectra of the laser light source in Figure 1A；
Fig. 2 B shows the typical emission spectra of the laser light source in Fig. 1 C；
Fig. 3 shows the schematic block diagram of the tunable laser device with tunable filter of the invention；
Fig. 4 A shows the embodiment of the tunable laser device in Fig. 3, wherein tunable filter includes non-
Asymmetric Mach-Zeng Deer (MZ) interferometer；
Fig. 4 B shows the transmitted spectrum of the asymmetric MZ interferometer in Fig. 4 A, in Fig. 4 A if eliminated asymmetric
The emission spectrum of the amplification laser light source of MZ interferometer is superimposed；
Fig. 4 C shows the emission spectrum of the tunable laser device in Fig. 4 A including asymmetric MZ interferometer, with
Fig. 4 B is compared, and shows the inhibition to side lobe peak；
Fig. 5 shows one embodiment of laser light source of the invention；
Fig. 6 shows one embodiment of tunable laser device of the invention, has cascade MZ interferometer；
Fig. 7 shows the illustrative methods of the laser light source for calibrating Fig. 3,4A, 5 and 6 of the invention；And
Fig. 8 shows a kind of example that light is generated for the laser light source using such as Fig. 3,4A, 5 and 6 of the invention
Property method.
Specific embodiment
When combining different embodiments and the example description present invention, the present invention is not intended to be limited by such embodiment
System.Conversely, the present invention includes different alternative ways and is equal as will be understood by those skilled in the art that
Object.
Due to can vernier tuning (Vernier-tunable) laser diode insertion SOA caused by SMSR reduce,
The source reduced for SMSR can be considered first.Fig. 2A is turned to, the example transmission spectrum of the laser light source 100 of Figure 1A is shown
200A.Inventor measures emission spectrum 200A.Emission spectrum 200A has main lasing peak value 129；The reflection of back mirror
The reflection side lobe peak 126 of side lobe peak 125 and front mirror.In fig. 2, lasing peak value 129 across such as 1530nm extremely
In tuning range between 1570nm, it is located near short wavelength edge (such as 1530nm), leads to the totality of about 50dB
SMSR。
Fig. 2 B is gone to, the emission spectrum 200B of the amplification laser light source 150 of Fig. 1 C is shown.Inventor is in similar shortwave
Emission spectrum 200B is measured under the conditions of long tuning.Side lobe peak 135 is caused by Amplified Spontaneous Emission (ASE), and ASE is from SOA
130 pass through gain section 104 towards 102 back-propagation of back mirror, reflect from back mirror 102, again pass through 104 He of gain section
SOA 130 is propagated.In the gain section 104 and at least partly MOPA system of the ASE in SOA 130, causes SMSR to reduce
To the only value of 40dB.The SMSR value of 40dB may be insufficient in the application of wavelength agile.
Referring now to Figure 3, tunable laser device 300 can be arranged as described below.For example, tunable laser device
The tunable laser section 302 of 300 embodiment including (in turn) optical coupling, tunable transmission optical filter 304 and SOA sections
306.Tunable laser section 302 may include optics cavity 303, and optics cavity 303 is used for from first wave length λ1Span to the second wave
Long λ2(λ2>λ1) tuning range Δ λ within tune excitation wavelength λoutput.Optics cavity 303 may include front mirror 311 and rear anti-
Penetrate mirror 312.Tunable transmission optical filter 304 is arranged on the downstream in the outside and tunable laser section 302 of optics cavity 303.
Tunable transmission optical filter 304 has passband and stop-band, and passband is used in excitation wavelength λoutputPlace's transmission light, stop-band are used for
The secondary lobe wavelength X of tunable laser sectionSPlace's decaying light, secondary lobe wavelength XSDifferent from excitation wavelength λoutput.Excitation wavelength λoutput
With secondary lobe wavelength XSBoth within tuning range Δ λ.SOA section 306 is arranged under tunable transmission optical filter 304
Trip.SOA section 306 has the amplification band including tuning range Δ λ.
In operation, tunable laser section 302 is in excitation wavelength λoutputPlace generates light.Tunable transmission optical filter 304
In excitation wavelength λoutputPlace's transmission light, while in secondary lobe wavelength XSPlace's decaying light.SOA 306 can amplify laser, generate output and swash
Light beam 309.In secondary lobe wavelength XSPlace may propagate through tunable transmission optical filter 304, quilt by the ASE 308 that SOA section 306 generates
Tunable transmission optical filter 304 is decayed, and is reflected from back mirror 312, is propagated again by tunable transmission optical filter 304, and
Decayed again.According to one embodiment, tunable transmission optical filter 304 is in secondary lobe wavelength XSThe ASE's 308 at place is double
Journey decaying can lead to sizable SMSR and improve.Certainly, within stop-band, more than just one secondary lobe wavelength XS, but there are many
It is such to be different from excitation wavelength λoutputWavelength, can be decayed by tunable transmission optical filter 304, this depend on optics cavity
The spectral shape of 303 wavelength selectivity characteristic and tunable transmission optical filter 304.
Fig. 4 A is gone to, tunable single chip laser device 400 is the tunable single chip laser device 300 in Fig. 3
Preferred embodiment.The optics cavity 403 of the tunable single chip laser device 400 of Fig. 4 includes preceding tunable sampled grating reflector
411 and rear tunable sampled grating reflector 412, they have the different tunable period corresponding with reflection wavelength, are used for
Excitation wavelength λ is tuned by cursor effectoutput.Tunable laser section 402 includes gain section 405 and phase section 407, institute
It states gain section 405 and phase section 407 is optically coupled in preceding tunable sampled grating reflector 411 and rear tunable sampling grating is anti-
It penetrates between mirror 412.The major function of gain section 405 is in excitation wavelength λoutputPlace provides the gain of light.Phase section 407 it is main
Function is that the optical path length of optics cavity 403 is adjusted, to provide efficient wavelength tuning.Tunable single chip laser device
400 further comprise tunable transmission optical filter 404 and SOA section 406.Tunable laser section 402, tunable transmission optical filter
404 and SOA section 406 forms single chip architecture.For example, tunable laser section 402, tunable transmission optical filter 404 and SOA
Section 406 can be configured, to be monolithically formed (not shown) in shared semiconductor substrate.
In embodiment as shown in Figure 4 A, tunable transmission optical filter 404 is implemented as asymmetric mach-Zeng Deer
Waveguide interferometers 404A comprising: optically coupling to the input port 421 of preceding tunable sampled grating reflector 411, optically coupling to
The output port 422 of SOA section 406, the first branch-waveguide 431 and the second branch-waveguide 432 with different light path lengths, is matched
It is set to the input coupler 441 by input port 421 optically coupling to the first branch-waveguide 431 and the second branch-waveguide 432, and
It is configured as the output coupler 442 by the first branch-waveguide 431 and the second branch-waveguide 432 optically coupling to output port 422.
In order to tune, which includes phase regulator 433 and 434, quilt
It is configured to adjust the optical path difference between first branch-waveguide 431 and the second branch-waveguide 432.It can provide at least one phase
Position adjuster 433 or 434.
In operation, preceding tunable sampled grating reflector 411 and rear tunable sampled grating reflector 412 are tuned to
In specific expected excitation wavelength λoutputPlace has reflection overlapping.Gain section 405 provides enough optical gains, to overcome
Loss in optics cavity 403.Phase section 407 can be tuned, it is preceding tunable so that the longitudinal mode of optics cavity 403 to be placed on
At the maximum reflection wavelength of the overlapping reflection peak of sampled grating reflector 411 and rear tunable sampled grating reflector 412.Laser
409 propagate across asymmetric mach-Zeng Deer waveguide interferometers 404A, and can be amplified by SOA section 406.
With reference to Fig. 4 B, and Fig. 4 A is referred to, asymmetric mach-Zeng Deer waveguide interferometers 404A (Fig. 4 A) can be by phase
Position adjuster 433 and 434 tunes, in secondary lobe wavelength XSLocate, corresponding to the central wavelength of stop-band 471A, there is transmission minimum value
471 (Fig. 4 B).Can also be with, and in fact it would be more practical that by asymmetric mach-Zeng Deer waveguide interferometers 404A biography
Defeated maximum value 472 be tuned to excitation wavelength λoutput.When asymmetric mach-Zeng Deer waveguide interferometers 404A free spectrum model
Enclose is in λoutputAnd λSBetween twice of interval when, the two conditions can be achieved at the same time.Because SMSR is usually in monolithic laser
The short wavelength side of the tuning range of device device 400 reduces at most, so it is desirable that it is most that Free Spectral Range, which is selected as,
Excitation wavelength needed for short and λSBetween twice of interval, as shown in Figure 4 B.
For corresponding to the λ of the SMSR situation (Fig. 4 B) of worst caseoutput, minimum transfer point 471 is preferably tuned to
Near the peak gain point of SOA section 406 (Fig. 4 A).SOA section 406 usually with the gain spectra of near parabolic, is described
Are as follows: there is peak gain in central wavelength, reduced at other wavelength with substantially parabolical correlation.Due to this original
Cause, as noted previously, as the ASE of back-propagation is reflected from back mirror 412, so, tunable single chip laser device 400
Emission spectrum 480 will not only include lasing wave in the case where asymmetric mach-Zeng Deer waveguide interferometers 404A is not present
Long λoutput, also include multiple side lobe peaks 435.With reference to Fig. 4 C, and refer to Fig. 4 A and 4B, asymmetric mach-Zeng Deer wave
Interferometer 404A (Fig. 4 A) suppressed sidelobes peak value 435 (Fig. 4 C) is led, especially inhibits those at minimum transfer point 471 (Fig. 4 B, 4C)
Side lobe peak 435 neighbouring, corresponding to stop-band 471A central wavelength.By comparing Fig. 4 B and Fig. 4 C, it can be seen that SMSR
It improves from 40dB to 50dB, that is, improve 10dB.
From the perspective of spectral purity, tunable transmission optical filter should have narrow unimodal passband, be less than described sharp
The peak separation of the back mirror of light device device 300 or 400.Also be expected to: transmission sharply is roll-offed (roll-off),
Low transmission in stop-band, and in the wide tunability across SOA section 306 or the entire amplification band of 406 frequency bands.However,
Narrow band transmission optical filter general size is larger.In contrast, broadband filters can be made more compact, on substrate (not shown)
The single-chip integration of tunable single chip laser device 400 is simplified.It is, for example, possible to use Free Spectral Range at least
The optical filter of bandwidth in 40% range with 3dB level.Asymmetric mach-Zeng Deer waveguide optical filter has sinusoidal transmission
Spectrum has 3dB transmission bandwidth in a half range of its Free Spectral Range.Preferably, which is approximately equal to
Detuning twice of maximum between optical maser wavelength and gain peak wavelength.For all band tunable laser, this is quite
In 50-60nm.
Other kinds of tunable transmission optical filter can be integrated into the tunable single chip laser device in Fig. 3 by monolithic
In tunable single chip laser device 400 in 300 and in Fig. 4.Mode by way of non-limiting example, tunable transmission filter
Device 304 and 404 may include that grating assists coupler in the same direction or tunable multi-mode interference coupler.
Referring now to Figure 5, laser light source 550 includes the tunable single chip laser device 500 for being coupled to controller 555.
Tunable single chip laser device 500 is the variant of the tunable single chip laser device 400 in Fig. 4 A.The tunable of Fig. 5 swashs
Light device monolithic device 500 may include tunable laser section 402, be coupled to the asymmetric tunable of tunable laser section 402
Mach-Zeng Deer waveguide interferometers 504A and it is coupled to asymmetric tunable Mach-Zeng Deer waveguide interferometers 504A
SOA section 406.Asymmetric tunable Mach-Zeng Deer waveguide interferometers 504A may include input coupler 541 and output coupling
Device 542 is connected by a pair of of branch-waveguide 531 and 532.Preferably, wherein input coupler 541 and output coupler
One or two of 542 be 2 × 2 couplers, such as directional coupler or 2 × 2 multi-mode interference couplers, so that optional
One photoelectric detector 561 and the second photoelectric detector 562 can be coupled to corresponding 2 × 2 input coupler 541 and 2 × 2 and export
The free waveguide of coupler 542.Controller 555 can be operatively coupled to tunable laser section 402, Mach-Zeng De
That waveguide interferometers 504A, SOA section 406 and optional photodetector 561 and 562.Controller 555 can be configured to, such as
It is programmed to, tunes the excitation wavelength λ of tunable laser section 402output, and by Mach-Zeng Deer waveguide interferometers 504A
Passband center wavelengths be tuned, with correspond to excitation wavelength λoutput, Mach-Zeng Deer waveguide interferometers 504A can also quilt
Tuning carrys out suppressed sidelobes peak value 435 (Fig. 4 B, 4C), to increase SMSR.When appropriate selection Mach-Zeng Deer waveguide interferometers
When the Free Spectral Range of 504A, in most cases, while sufficiently high transmission conditions and sufficiently high SMSR can be met
Condition.
Usually by adjusting the tuner parameters of optical path difference between branch-waveguide 531 and 532 etc., once to the Mach-
Dare waveguide interferometers 504A is tuned.As noted above, only in excitation wavelength λoutputPlace maximizes Output optical power,
It may be more practical.For this purpose, controller 555 can be configured to reduce the light detected by second photoelectric detector 562
Optical power levels.When optical power levels are minimized, the optical power of all generations is coupled to SOA section 406, thus swashing
Penetrate wavelength XoutputPlace maximizes asymmetric tunable Mach-Zeng Deer waveguide interferometers 504A transmission.Controller 555
The forward voltage in SOA section 406 can also be monitored, alternatively, (when SOA section 406 temporarily operates under reverse bias, for use as light
When photodetector) in the reversed photoelectric current of SOA section 406, to determine that the maximum light of Mach-Zeng Deer waveguide interferometers 504A passes
Defeated tuning condition.
The geometry of different tunable filters can be used, to inhibit the ASE from 406 back-propagation of SOA section.Turn
To Fig. 6, tunable single chip laser device 600 is the tunable single chip laser device 300 in Fig. 3, the tunable single in Fig. 4
The variant of chip laser device 400 or the tunable single chip laser device 500 in Fig. 5.Tunable monolithic in Fig. 6 swashs
The asymmetric cascade that light device device 600 includes: tunable laser section 402, is coupled to tunable laser section 402 is tunable
Mach-Zeng Deer waveguide interferometers 604A and it is coupled to the tunable Mach-Zeng Deer waveguide interferometers of asymmetric cascade
The SOA section 406 of 604A.Asymmetric cascading Mach-Zeng Deer waveguide interferometers 604A may include, for example, first Mach-Zeng De
That level segment 681 and second Mach-Zeng Deer level segment 682.The cascading Mach-Zeng Deer waveguide interferometers 604A can have ratio
The broader inhibition spectral band of single Mach-Zeng Deer interferometer, and therefore it can provide better SMSR.It is more than two
Level segment, such as two, three and four level segments can use.
In order in excitation wavelength λoutputPlace provides high-caliber transmission, while suppressed sidelobes peak value 435 (Fig. 4 B and 4C),
Asymmetric tunable Mach-Zeng De in asymmetric tunable Mach-Zeng Deer waveguide interferometers 404A, Fig. 5 in Fig. 4 A
Asymmetric tunable Mach-Zeng Deer waveguide interferometers 604A free spectrum model in your waveguide interferometers 504A and Fig. 6
It encloses, the substantially equal to described tuning range Δ λ can be selected as.Another criterion can be, and make Free Spectral Range substantially etc.
In first wave length λ1Twice of interval between the center of the amplification band of SOA section 406.This allows people in excitation wavelength
λoutputPlace maximizes transmission, while in the most strength suppressed sidelobes peak value 435-of side lobe peak 435 see, e.g., Fig. 4 C.
It will consider that the method for calibration and the operation of tunable laser, the tunable laser include successively coupling now
Tunable laser section, tunable transmission optical filter and semiconductor optical amplifier section, such as Fig. 3 laser device 300, figure
The laser device 600 of 4 laser device 400, the laser light source 550 of Fig. 5 or Fig. 6.Referring to Fig. 7, one kind is for calibrating example
Such as the method 700 of the laser light source 550 in Fig. 5, started with 701 steps.In a step 702, excitation wavelength λoutputIt can be adjusted
The humorous calibration wavelength X in tuning range Δ λC.It, then, can be all by adjusting in next step 704 when completing step 702
The tuning current of phase regulator 433 and/or 434 or the tuner parameters of voltage are such as applied to, it is non-right to scan in step 704
Claim Mach-Zeng Deer interferometer 504A passband center wavelengths.In step 706, it is scanned when to passband center wavelengths
When, controller 555 determines current Output optical power and/or current SMSR.In step 708, when the scan is complete, that
, in the tuner parameters that scanning step 704 scans and/or in step 704 the central wavelength value that scans, controller 555 is selected
Select value corresponding with the maximum output optical power and/or maximum SMSR that determine in SMSR calculating step 706.Then, in step
In rapid 710, the value in tuning parameter values and/or central wavelength value that selects in step 708 can in first step 702
The calibration wavelength being tuned to is associated.In step 712, for calibrating wavelength XGGrid (a grid of calibration
wavelengthλG), step 702 can be repeated to 710.For being located within tuning range Δ λ but not equal in step
712 calibration wavelength XGThe wavelength of any value in grid can be by the calibration wavelength X in step 714GIn grid
Two immediate calibration wavelength XsGBetween interpolation (interpolation), come determine corresponding tuner parameters value and/or
The value of central wavelength value.Method 700 ends at step 715.As described above, asymmetric mach-Zeng Deer interference ought be selected suitably
When the Free Spectral Range of instrument 504A, by determining that maximum output optical power (step 706) can be sufficient to optimize SMSR.
Go to Fig. 8, a kind of embodiment for generating the method 800 of light includes step 802: providing a kind of tunable laser
Device, the tunable laser include the tunable laser section successively coupled, tunable transmission optical filter and semiconductor light
Amplifier section, for example, the laser device in laser device 400 or Fig. 5 in laser device 300, Fig. 4 in Fig. 3
500；Laser device 600 in Fig. 6；Or the laser light source 550 in offer Fig. 5.Laser device 300,400,500,550 or
600 can be calibrated using the method 700 in Fig. 7 in step 804.In next step 806, it can motivate
(energize) laser；And excitation wavelength λoutputThe first operation wavelength that can be tuned in tuning range Δ λ.So
Afterwards, in step 808, the central wavelength of the stop-band of tunable transmission optical filter 304 or 404 can be tuned, to increase first
The Output optical power and/or SMSR of operating wave strong point.In step 810, SOA section 406 can be motivated.In one embodiment,
In, tunable transmission optical filter 304 or 404 is tuned in step 808, causes maximum transmitted wavelength not equal to the first work
Make wavelength, have additional light loss so as to cause in tunable transmission optical filter 304 or 404, can also in step 810 by
SOA section 406 is activated to the level for being enough to compensate the additional light loss.Laser device is compensated if necessary to closed-loop control
300, drift caused by 400,500,550 or 600 aging, then the tunable transmission substantially under bias condition can be applied
The phase jitter of optical filter 304,404, with maintenance be locked to institute's monitoring parameter (such as Output optical power, SOA electric current,
SMSR etc.) local minimum or local maximum.
For realizing various illustrative logicals, logic diagram, module and the circuit in conjunction with aspect disclosed herein
Hardware can realize or execute by following device: the integrated electricity of general processor, digital signal processor (DSP), special-purpose
It is road (ASIC), field programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hard
Part component is designed to execute any combination of the device of function described herein.General processor can be micro process
Device, but in alternative scheme, which can be any conventional processor, controller, microcontroller or state machine.
Processor can also be implemented as the combination of computing device, for example, the combination of DSP and microprocessor, the combination of multi-microprocessor,
The combination of combination or any other this kind of configuration that one or more microprocessors are combined with DSP core.Alternatively, wherein
Some steps or method can be executed by being exclusively used in the circuit of given function.
The scope of the present disclosure is not limited by specific embodiment described herein.In fact, according to the description of front and
Attached drawing, other than embodiment described here, other various embodiments and modification to those of ordinary skill in the art will be it is aobvious and
It is clear to.Therefore, such other embodiments and modification are intended within the protection scope for falling into present disclosure.In addition, to the greatest extent
Pipe is in the context of particular embodiments described present disclosure for specific purpose, in specific environment, still
Those skilled in the art will appreciate that its purposes is without being limited thereto, and can be advantageously in any amount of environment for arbitrary number
The purpose of amount realizes content of this disclosure.Therefore, should according to the full scope and spirit of the disclosure as described in this, to
The claim of lower elaboration explains.
Claims (20)
1. a kind of tunable laser device, comprising:
Tunable laser section is configured to generate light at excitation wavelength, wherein the tunable laser includes light
Chamber is learned, is used to be tuned the excitation wavelength within the tuning range from first wave length to second wave length,
In, the second wave length is longer than the first wave length；
Tunable transmission optical filter, is arranged on except the optics cavity, and is arranged on the tunable laser section
Downstream, wherein the tunable transmission optical filter includes:
Passband is configured to transmit light at the excitation wavelength；And
Stop-band is configured to decay to light at the secondary lobe wavelength of the tunable laser section, wherein
The secondary lobe wavelength is different from the excitation wavelength, and wherein, and the excitation wavelength and the secondary lobe wavelength are described
Within tuning range；And
SOA sections of semiconductor optical amplifier, by optionally optically coupling to the tunable transmission optical filter, and it is located at described adjustable
The downstream of humorous transmission optical filter, wherein described SOA sections has the amplification band including the tuning range.
2. tunable laser device according to claim 1, wherein the tunable transmission optical filter includes that grating is auxiliary
Help coupler in the same direction or tunable multi-mode interference coupler.
3. tunable laser device according to claim 1, wherein the optics cavity includes preceding tunable sampling grating
Reflecting mirror and rear tunable sampled grating reflector, they have it is corresponding with reflection wavelength it is different tune the periods, be used for via
Cursor effect tunes the excitation wavelength, and the tunable laser section further includes gain section and phase section, the gain section and
The phase section be optically coupled in the preceding tunable sampled grating reflector and it is described after tunable sampled grating reflector it
Between.
4. tunable laser device according to claim 3, wherein the tunable laser section, described tunable
Transmit optical filter and the SOA sections of formation single chip architecture.
5. tunable laser device according to claim 4, wherein the passband is in 3dB level at least width
16nm。
6. tunable laser device according to claim 4, wherein the tunable transmission optical filter has free light
Spectral limit, and wherein, at least the 40% of the Free Spectral Range is accounted in the passband of 3dB level.
7. tunable laser device according to claim 4, wherein the tunable transmission optical filter includes asymmetric
Mach-Zeng Deer waveguide interferometers can be tuned, to have transmission maximum value at the excitation wavelength, or on the side
There is transmission minimum value at valve wavelength.
8. tunable laser device according to claim 7, wherein the asymmetric tunable Mach-Zeng Deer wave
Leading interferometer includes cascading Mach-Zeng Deer waveguide interferometers.
9. tunable laser device according to claim 7, wherein the asymmetric tunable Mach-Zeng Deer wave
Interferometer is led with Free Spectral Range, the Free Spectral Range is substantially equal to the tuning range.
10. tunable laser device according to claim 7, wherein the asymmetric tunable Mach-Zeng Deer
Waveguide interferometers have Free Spectral Range, and the Free Spectral Range is substantially equal to the first wave length and SOA sections described
Amplification band center between twice of interval.
11. tunable laser device according to claim 7, wherein the asymmetric tunable Mach-Zeng Deer
Waveguide interferometers include:
Input port is optically coupled to the preceding tunable sampled grating reflector；
Output port is optically coupled to SOA sections described；
First branch-waveguide and the second branch-waveguide, they have different optical path lengths；
Input coupler is configured as the input port optically coupling to first branch-waveguide and second branch
Waveguide；
Output coupler is configured as first branch-waveguide and second branch-waveguide optically coupling to the output
Port；And
Phase regulator is configured as adjusting the light path between first branch-waveguide and second branch-waveguide
Difference.
12. tunable laser device according to claim 11, wherein the output coupler includes 2 × 2 optical couplings
Device, the tunable laser device further include the photoelectric detector for being optically coupled to 2 × 2 photo-coupler.
13. a kind of laser light source comprising controller and tunable laser device as claimed in claim 12, the control
Device is operatively coupled to the photoelectric detector and the phase regulator, and the controller is configured to described in adjustment
Optical path difference, to reduce the optical power levels of the light detected by the photoelectric detector.
14. a kind of laser light source comprising controller and tunable laser device as described in claim 1, the control
Device is operatively coupled to the tunable laser section, the tunable transmission optical filter and SOA sections described, wherein institute
Controller is stated to be configured as:
Tune the excitation wavelength of the tunable laser section；And
By adjusting the first tuner parameters of the tunable transmission optical filter, to tune the institute of the tunable transmission optical filter
The central wavelength of passband is stated, so as to corresponding with the excitation wavelength.
15. a kind of method for calibrating such as tunable laser device of any of claims 1-12, wherein institute
Stating tunable laser device includes the tunable laser section successively coupled, tunable transmission optical filter and semiconductor optical amplification
SOA sections of device, which comprises
(a) excitation wavelength of the tunable laser section is tuned to calibration wavelength, the calibration wavelength is described tunable
Within the tuning range of laser section；
(b) after completing step (a), the central wavelength of the passband of the tunable transmission optical filter is scanned；
(c) when executing step (b), the Output optical power or side mode suppression ratio of the laser light source are determined；
(d) in the value of the central wavelength scanned in step (b), selection and the maximum output light determined in step (c)
Power or the corresponding value of maximum side mode suppression ratio；And
(e) described value for the central wavelength that will be selected in the step (d), in step (a) be tuned to the calibration
Wavelength is associated.
16. the method according to claim 15, further includes:
(f) it for calibrating Wavelength grid, repeats step (a) to (e).
17. according to the method for claim 16, further includes:
(g) for the wave of any value in the calibration Wavelength grid in the tuning range but not equal to step (f)
It is long, the central wavelength is determined by carrying out interpolation between two immediate calibration wavelength of the calibration Wavelength grid
Value.
18. a kind of method for generating light comprising:
(a) it provides a kind of such as tunable laser device of any of claims 1-12, the tunable laser
Device includes the tunable laser section successively coupled, the tunable transmission optical filter and the semiconductor optical amplifier
SOA sections；
(b) the tunable laser section is motivated, and tunes the excitation wavelength of the tunable laser section, is tuned to
The first operation wavelength within the tuning range of the tunable laser section；
(c) passband center wavelengths of the tunable transmission optical filter are tuned, to increase side in the first operating wave strong point
Mould inhibits ratio；And
(d) described semiconductor optical amplifier SOA sections are motivated.
19. according to the method for claim 18, wherein in step (c), the tunable transmission optical filter is described first
Operating wave strong point has light loss；
Wherein in step (d), described semiconductor optical amplifier SOA sections are activated to the amplification water for being enough to compensate the light loss
It is flat.
20. according to the method for claim 18, wherein the step (a) is described tunable including being calibrated by following step
Laser device:
(i) by the excitation wavelength be tuned to calibration wavelength in the tuning range；
(ii) after completing step (i), the central wavelength of the passband is scanned；
(iii) when executing step (ii), the Output optical power of the tunable laser device is determined；
(iv) in the value of the central wavelength of the passband scanned in step (ii), selection is determined in step (iii)
The corresponding value of maximum output optical power；And
(v) described value of the central wavelength of the passband selected in step (iv) is tuned in step (i)
The calibration wavelength arrived is associated.
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| US14/502,190 US9312662B1 (en) | 2014-09-30 | 2014-09-30 | Tunable laser source |
| US14/502,190 | 2014-09-30 |
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Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6039493B2 (en) * | 2013-04-25 | 2016-12-07 | キヤノン株式会社 | Optical frequency calibration method and program for wavelength-swept light source, storage medium, optical frequency calibration apparatus, and optical coherence tomography measurement apparatus |
| US9312662B1 (en) | 2014-09-30 | 2016-04-12 | Lumentum Operations Llc | Tunable laser source |
| US9766483B2 (en) * | 2016-01-21 | 2017-09-19 | Sumitomo Electric Industries, Ltd. | Optical transceiver implementing erbium doped fiber amplifier |
| US20180078014A1 (en) * | 2016-04-03 | 2018-03-22 | Davy Zide Qian | Case having gripping hole for tablet/mobile phone |
| JP2017188596A (en) * | 2016-04-07 | 2017-10-12 | 三菱電機株式会社 | Optical module |
| US10473581B2 (en) | 2017-08-09 | 2019-11-12 | Raytheon Company | Irradiation of lead based quantum dots to generate near infrared phosphorescence as part of a compact, thin profile, on-demand calibration source |
| WO2019060547A1 (en) * | 2017-09-20 | 2019-03-28 | Macom Technology Solutions Holdings, Inc. | Tunable laser for coherent transmission system |
| CN109818258B (en) | 2017-11-21 | 2020-08-25 | 海思光电子有限公司 | Tunable laser and laser transmitter |
| CN111566530B (en) * | 2018-01-18 | 2022-02-11 | 华为技术有限公司 | Wavelength calibration method, device and system of micro-ring filter |
| US11733582B2 (en) | 2018-02-05 | 2023-08-22 | GC Photonics, Inc. | Variable optical filter |
| JP7269185B2 (en) * | 2018-02-08 | 2023-05-08 | 古河電気工業株式会社 | Tunable lasers and optical modules |
| FR3082670B1 (en) * | 2018-06-14 | 2022-03-11 | Thales Sa | LOCKING A LASER TO A RESONATOR WITH THE HELP OF AN OPTICAL AMPLIFIER |
| US20210063776A1 (en) * | 2019-09-03 | 2021-03-04 | Lumentum Operations Llc | Integrated semiconductor laser with interferometric amplifier array |
| US11248953B2 (en) | 2019-09-11 | 2022-02-15 | Raytheon Company | Broadband calibrator from visible to long wave infrared |
| CN114402264A (en) * | 2019-09-17 | 2022-04-26 | Asml控股股份有限公司 | Laser module as alignment source, metrology system and lithographic apparatus |
| US11705692B2 (en) * | 2020-07-28 | 2023-07-18 | Cisco Technology, Inc. | Laser side mode suppression ratio control |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1778022A (en) * | 2003-02-19 | 2006-05-24 | Pbc激光有限公司 | Apparatus for and method of frequency conversion |
Family Cites Families (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4659923A (en) | 1981-03-09 | 1987-04-21 | Polaroid Corporation | Fiber optic interferometer transducer |
| US5136598A (en) | 1990-05-31 | 1992-08-04 | The United States Of America As Represented By The Secretary Of The Navy | Modulated high-power optical source |
| US5325392A (en) | 1992-03-06 | 1994-06-28 | Nippon Telegraph And Telephone Corporation | Distributed reflector and wavelength-tunable semiconductor laser |
| JPH07335981A (en) * | 1994-06-07 | 1995-12-22 | Mitsubishi Electric Corp | Semiconductor light emitting element, laser amplifier and wavelength variable filter with amplifying function |
| FR2737353B1 (en) | 1995-07-25 | 1997-09-05 | Delorme Franck | LASER WITH DISTRIBUTED BRAGG REFLECTOR AND SAMPLE ARRAY, VERY WIDELY TUNABLE BY PHASE VARIATION, AND METHOD OF USING THE SAME |
| US6208454B1 (en) | 1997-12-23 | 2001-03-27 | Agere Systems Optoelectronics Guardian Corp | All-optical mach-zehnder wavelength converter with monolithically integrated laser |
| JP3361305B2 (en) * | 1999-01-14 | 2003-01-07 | 日本電信電話株式会社 | Light source |
| US6714566B1 (en) | 1999-03-01 | 2004-03-30 | The Regents Of The University Of California | Tunable laser source with an integrated wavelength monitor and method of operating same |
| US6728279B1 (en) | 1999-05-17 | 2004-04-27 | Interuniversitair Microelektronica Centrum | Widely wavelength tunable integrated semiconductor device and method for widely tuning semiconductor devices |
| US6654400B1 (en) | 1999-09-02 | 2003-11-25 | Agility Communications, Inc. | Method of making a tunable laser source with integrated optical amplifier |
| US6614819B1 (en) | 1999-09-02 | 2003-09-02 | Agility Communications, Inc. | Method of modulating an optical wavelength with an opto-electronic laser with integrated modulator |
| US6909734B2 (en) | 1999-09-02 | 2005-06-21 | Agility Communications, Inc. | High-power, manufacturable sampled grating distributed Bragg reflector lasers |
| US6580739B1 (en) | 1999-09-02 | 2003-06-17 | Agility Communications, Inc. | Integrated opto-electronic wavelength converter assembly |
| US6628690B1 (en) | 1999-09-02 | 2003-09-30 | Agility Communications, Inc. | Opto-electronic laser with integrated modulator |
| US6574259B1 (en) | 1999-09-02 | 2003-06-03 | Agility Communications, Inc. | Method of making an opto-electronic laser with integrated modulator |
| US6658035B1 (en) | 1999-09-02 | 2003-12-02 | Agility Communications, Inc. | Tunable laser source with integrated optical amplifier |
| CN1376326A (en) | 1999-09-28 | 2002-10-23 | 加利福尼亚大学董事会 | Integrated wavelength tunable single and two-stage all-optical wavelength converter |
| EP1281221B8 (en) | 2000-05-04 | 2008-10-15 | JDS Uniphase Corporation | Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers |
| US6937638B2 (en) | 2000-06-09 | 2005-08-30 | Agility Communications, Inc. | Manufacturable sampled grating mirrors |
| US6690693B1 (en) | 2000-05-04 | 2004-02-10 | Agility Communications, Inc. | Power and wavelength control of sampled grating distributed Bragg reflector lasers |
| US6788719B2 (en) | 2000-05-04 | 2004-09-07 | Agility Communications, Inc. | Open loop control of SGDBR lasers |
| AU2001292973A1 (en) | 2000-09-22 | 2002-04-02 | Blue Leaf, Inc. | Optical transmitter comprising a stepwise tunable laser |
| US20020054614A1 (en) * | 2000-11-07 | 2002-05-09 | Hong Jin | Wavelength discretely tunable semiconductor laser |
| US6934033B2 (en) * | 2000-12-28 | 2005-08-23 | Coretek, Inc. | Single-etalon, multi-point wavelength calibration reference |
| US6690687B2 (en) * | 2001-01-02 | 2004-02-10 | Spectrasensors, Inc. | Tunable semiconductor laser having cavity with ring resonator mirror and mach-zehnder interferometer |
| US6822980B2 (en) | 2001-07-25 | 2004-11-23 | Adc Telecommunications, Inc. | Tunable semiconductor laser with integrated wideband reflector |
| DE60204795T2 (en) | 2001-10-30 | 2006-05-18 | Tsunami Photonics Ltd. | STABILITY FACTORS FOR TRACEABLE SEMICONDUCTOR LASERS WITH SEVERAL SECTIONS |
| US6868100B2 (en) | 2001-12-04 | 2005-03-15 | Agility Communications, Inc. | Methods for robust channel switching of widely-tunable sampled-grating distributed bragg reflector lasers |
| US6687267B2 (en) | 2002-02-06 | 2004-02-03 | Jds Uniphase Corporation | Widely tunable laser |
| US20040057477A1 (en) * | 2002-09-24 | 2004-03-25 | Agere Systems Inc. | Wavelength locking device |
| JP2004126172A (en) | 2002-10-02 | 2004-04-22 | Nippon Telegr & Teleph Corp <Ntt> | Grating element, mach zehnder interferometer, and optical cross-connection system |
| US7478007B2 (en) | 2002-10-30 | 2009-01-13 | Intune Technologies Limited | Method for compensation of degradation in tunable lasers |
| KR100541913B1 (en) | 2003-05-02 | 2006-01-10 | 한국전자통신연구원 | Sampled-Grating Distributed Feedback Wavelength-Tunable Semiconductor Laser Integrated with Sampled-Grating Distributed Bragg Reflector |
| US7043097B2 (en) | 2003-07-25 | 2006-05-09 | Agility Communications, Inc. | Traveling-wave optoelectronic wavelength converter |
| US7633988B2 (en) | 2003-07-31 | 2009-12-15 | Jds Uniphase Corporation | Tunable laser source with monolithically integrated interferometric optical modulator |
| WO2005099421A2 (en) | 2004-04-14 | 2005-10-27 | The Trustees Of Princeton University | Monolithic wavelength stabilized asymmetric laser |
| JP4069111B2 (en) | 2004-11-18 | 2008-04-02 | 株式会社日立製作所 | Semiconductor laser device |
| US20090122817A1 (en) | 2005-09-06 | 2009-05-14 | Nec Corporation | Variable-wavelength filter and variable-wavelength laser |
| US7589840B2 (en) * | 2006-01-10 | 2009-09-15 | Sunrise Telecom Incorporated | Broad- and inter-band multi-wavelength-reference method and apparatus for wavelength measurement or monitoring systems |
| US7558484B2 (en) * | 2006-03-06 | 2009-07-07 | Chang Gung Memorial University | Ultra-wide band wireless system |
| WO2007107186A1 (en) | 2006-03-23 | 2007-09-27 | Pirelli & C. S.P.A. | Integrated laser optical source |
| JP2008251673A (en) | 2007-03-29 | 2008-10-16 | Nec Corp | Optical device and manufacturing method therefor |
| GB2448162A (en) | 2007-04-03 | 2008-10-08 | Bookham Technology Plc | Tunable semiconductor laser |
| US7692793B2 (en) * | 2007-11-29 | 2010-04-06 | Oclaro North America Inc. | Analyzing tunable optical filters using tunable source |
| US8559478B2 (en) | 2008-01-18 | 2013-10-15 | The Regents Of The University Of California | Hybrid silicon laser-quantum well intermixing wafer bonded integration platform for advanced photonic circuits with electroabsorption modulators |
| US8379300B2 (en) | 2008-02-19 | 2013-02-19 | Nec Corporation | Wavelength-variable light source with dual resonator loop circuit |
| DE102008045634A1 (en) * | 2008-09-03 | 2010-03-04 | Ludwig-Maximilians-Universität München | Wavelength tunable light source |
| JP5407526B2 (en) | 2009-04-27 | 2014-02-05 | 住友電気工業株式会社 | Wavelength tunable laser, wavelength tunable laser apparatus, and wavelength tunable laser control method |
| US8368995B2 (en) | 2009-10-13 | 2013-02-05 | Skorpios Technologies, Inc. | Method and system for hybrid integration of an opto-electronic integrated circuit |
| US8543010B2 (en) | 2010-02-24 | 2013-09-24 | Jds Uniphase Corporation | Bias control in an optical modulator and transmitter |
| JP5597029B2 (en) | 2010-05-27 | 2014-10-01 | 住友電気工業株式会社 | Tunable semiconductor laser |
| US8619824B2 (en) * | 2010-09-03 | 2013-12-31 | Teraxion Inc. | Low white frequency noise tunable semiconductor laser source |
| EP2431775A1 (en) | 2010-09-16 | 2012-03-21 | Alcatel Lucent | Interleaved sampled gratings for multi-peaks reflectivity spectrum |
| US20120294320A1 (en) | 2011-03-18 | 2012-11-22 | University College Cork, National University Of Ireland | Tunable laser system and method |
| JP5742517B2 (en) | 2011-07-04 | 2015-07-01 | 住友電気工業株式会社 | Method for forming sampled grating and method for manufacturing semiconductor laser |
| US20130094527A1 (en) | 2011-10-13 | 2013-04-18 | Sumitomo Electric Industries, Ltd. | Wavelength monitor, wavelength lockable laser diode and method for locking emission wavelength of laser diode |
| JP2013089754A (en) | 2011-10-18 | 2013-05-13 | Sumitomo Electric Ind Ltd | Method for controlling variable wavelength semiconductor laser |
| WO2014018950A1 (en) * | 2012-07-27 | 2014-01-30 | Thorlabs, Inc. | Agile imaging system |
| JP6297557B2 (en) | 2012-07-27 | 2018-03-20 | ソルラブス、インコーポレイテッド | Quantum well tunable short cavity laser |
| US9014222B2 (en) * | 2012-08-15 | 2015-04-21 | Ranovus Inc. | Discretely tunable laser device |
| US20140050237A1 (en) * | 2012-08-15 | 2014-02-20 | Ranovus Inc. | Discretely tunable locally seeded laser device |
| US20140254617A1 (en) * | 2013-03-06 | 2014-09-11 | Electronics And Telecommunications Research Institute | Tunable laser diode device with amzi-fp filter |
| US9312662B1 (en) | 2014-09-30 | 2016-04-12 | Lumentum Operations Llc | Tunable laser source |
-
2014
- 2014-09-30 US US14/502,190 patent/US9312662B1/en active Active
- 2014-12-23 EP EP14200180.9A patent/EP3002836B1/en active Active
-
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- 2015-01-09 CN CN201510011996.0A patent/CN105470811B/en active Active
-
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- 2016-04-08 US US15/094,591 patent/US9728933B2/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1778022A (en) * | 2003-02-19 | 2006-05-24 | Pbc激光有限公司 | Apparatus for and method of frequency conversion |
Non-Patent Citations (1)
| Title |
|---|
| 可调谐激光器的调谐控制技术;张文涛 等;《光电仪器原理及应用》;20140331;第70-71页 * |
Also Published As
| Publication number | Publication date |
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| EP3002836B1 (en) | 2020-02-12 |
| EP3002836A3 (en) | 2016-09-07 |
| US9728933B2 (en) | 2017-08-08 |
| EP3002836A2 (en) | 2016-04-06 |
| US20160094017A1 (en) | 2016-03-31 |
| US9312662B1 (en) | 2016-04-12 |
| US20160226218A1 (en) | 2016-08-04 |
| CN105470811A (en) | 2016-04-06 |
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