CN105470377A - LED packaging technology based on MEMS technology - Google Patents
LED packaging technology based on MEMS technology Download PDFInfo
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- CN105470377A CN105470377A CN201510966730.1A CN201510966730A CN105470377A CN 105470377 A CN105470377 A CN 105470377A CN 201510966730 A CN201510966730 A CN 201510966730A CN 105470377 A CN105470377 A CN 105470377A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to an LED packaging technology, in particular to an LED packaging technology based on an MEMS technology. The packaging technology comprises the following steps: taking a Si substrate as a packaging carrier, taking solder paste as surface-mounted adhesive, taking eutectic reflux as a welding means, directly manufacturing a support on the Si substrate by using the MEMS technology, taking a silica gel encapsulation material doped with a high-refractive-index nanoscale optical medium and fluorescent powder, and taking a convex optical window as an encapsulation mode. Compared with the prior art, the LED packaging technology has the advantages that the Si-based MEMS technology is adopted, attributes of an LED packaged functional material are perfectly combined to attributes of a structural material, through a semiconductor technology, an electrostatic protection function is fulfilled and electrical appliances with COB structures are connected to one another, and through the MEMS technology, a packaged optical structure is realized. Si materials have relatively low heat resistance and a mature machining technology, and low-cost and large-scale production of COB can be realized.
Description
Technical field
The present invention relates to a kind of LED technology, especially relate to a kind of LED technology based on MEMS technology.
Background technology
Microelectronics machine mechanical system (MicroElectro-MechanicalSystems, MEMS) is a kind of industrial technology microelectric technique and mechanical engineering are fused together, and its opereating specification is in micrometer range.MEMS technology can, in the category that chip is micron size, adopt modern processing technique and Material growth and synthetic technology to produce the micro mechanical system with machinery, electronics and other physical characteristics.Current MEMS technology development is swift and violent, be mainly used in microsensor as pressure sensor, acceleration transducer etc., micro parts is as micro-valve, Micropump, micro motor etc., Micro-Opto-Electro-Mechanical Systems (MicroOptic-ElectroMechanicalSystem, MOEMS), the field such as micromechanics radio-frequency devices and biochip.
The components and parts developed at present in the Micro-Opto-Electro-Mechanical Systems relevant to light have micro mirror array, low-light chopper, glimmer switch and low-light scanner etc.At foreseeable future, MOEMS will be used widely in all-optical communication network, will greatly promote the development of information communication, space technology and optical tooling, produce far-reaching influence to the whole information age.
The encapsulation mode of great power LED is mainly divided into following several both at home and abroad at present: ceramic packaging (Al2O3 or AlN), printed circuit board (PCB) (printedcircuitboard, PCB) Al substrate or Cu substrate package and metal chip on board (chiponboard, COB) encapsulation.Because the current cost of ceramic material crucial in ceramic packaging is very high, market only has the U.S. and some large enterprises of Japan to adopt ceramic packaging technology to produce high-end LED.Also there is the problems such as the prevention and control of encapsulation electrostatic, LED lamp bead light decay at present in printed circuit board (PCB) encapsulation technology.And chip package is packaging technology up-to-date at present on metallic plate, but the sealed in unit of relevant large scale integration does not also occur.Along with the progress of LED technology, LED is progressively to highly integrated, power supply integration and Based Intelligent Control future development, if MEMS technology to be applied to great power LED COB encapsulation field, using Si as package carrier, the cost of following intelligent lighting will be reduced on a large scale, simultaneously due to the heat conductivility of Si material excellence, the useful life of LED product can be increased substantially.Therefore, those skilled in the art are badly in need of studying a kind of novel encapsulated technology, open up a full technical strategies, realize the novel product of LED and driving power, Based Intelligent Control Highgrade integration.
Summary of the invention
In order to solve the problem of above-mentioned prior art, the object of this invention is to provide a kind of LED technology based on MEMS technology, it comprises: adopt Si substrate as package carrier, tin cream is adopted to make its Heraeus, adopt eutectic backflow as welding means, adopt MEMS technology directly at Si substrate manufacture support, adopt and mix the nanoscale light medium of high index of refraction and the silica gel material of fluorescent material, adopt convex optical window as embedding mode.
Further, described Si substrate is undoped high resistant monocrystalline silicon, and technical process is: physical vapour deposition (PVD) (PhysicalVaporDeposition, PVD) SiO
2mask growth → photoresist coating → photoetching → wet etching → transition metal evaporation → bonded layer evaporation → photoresist coating → photoetching → corrosion.Due to Si patterned features, wet etching liquid is different to its different crystal orientation corrosion rate, and in order to ensure the smooth of bottom, inclined-plane, side utilizes part lateral light to derive, and backing material crystal orientation is chosen as < 100 >.
Preferably, described tin cream is Sn96.5Ag3Cu0.5, and tin cream thickness is less than 25 μm.
Further, described eutectic backflow uses the automatic die bond of bonder.
Further, described MEMS technology refers to and reserves LED chip paster groove by the mode of photoetching or etching on si substrates, then form reflecting wall in paster groove surrounding and by the mode of evaporation material high for light reflectivity covered within the walls side to increase LED offside reflection coefficient.The size of above-mentioned LED chip paster groove should be more bigger than chip: at least reserve 200 μm.Specifically, if LED chip is of a size of 1300 μm × 1300 μm, paster groove size is 1500 μm × 1500 μm × 220 μm.Consider many technological factors such as outer lead, bonding region and embedding district, if chip size is 1300 μm × 1300 μm, enclose in reflecting wall and be of a size of 4800 μm × 3000 μm × 400 μm, the thickness of wall is 100 μm, and reflecting wall Outside Dimensions is 5000 μm × 3200 μm × 400 μm.Preferably, the material that above-mentioned light reflectivity is high is gold.
According to total reflection law, when optically denser medium is to optically thinner medium transmission ray, the incident light being only less than critical angle could enter optically thinner medium by optically denser medium.According to total reflection law, critical angle computing formula is: I
m=argsin (n
'/ n).If the LED chip that a LED uses be current main flow SiC substrate on growing GaN epitaxial loayer, the refractive index of GaN is 2.3, and the refractive index of air is 1, when chip does not encapsulate, is about 25.8 ° through calculating critical angle.Namely when light directive air direct from chip internal, the light only having incidence angle to be less than in 25.8 ° of these space multistory angles could effectively be derived, and the light that chip active district sends has in 0 ~ 180 °, namely the light that active layer produces only has fraction to be removed, and most of light is absorbed through multiple reflections in inside.Therefore the process encapsulated is except protect IC, and another effect is the medium adding a high index of refraction between chip and air, and light is effectively derived.For further raising efficiency, the nanoscale light medium of high index of refraction of adulterating in the silica gel of high index of refraction, increases critical angle further, improves light extraction efficiency.Light powder particles degree is on the impact of the impact of white light light extraction efficiency much larger than casting glue refractive index.Within the specific limits, the light extraction efficiency of the fluorescent material that the fluorescent material that granularity is large is little compared with granularity is high.Have data to show, contrast white light light efficiency, granularity is that the light extraction efficiency of the fluorescent material of 8 μm, the fluorescent material of 17 μm is high by 8.6%.
According to optical design, optical window pattern directly affects the rising angle of light, namely changes the scope of critical angle.The design of convex optical window greatly increases emergent light.
Compared to the prior art; advantage of the present invention adopts Si base MEMS technology; the functional material attribute of LED and structural material attribute perfectly can be combined; realized the electrical equipment interconnection of electrostatic protection function and COB structure by semiconductor technology, realized the optical texture of encapsulation by MEMS technology.Si material has lower thermal resistance and ripe processing technology, can realize COB low cost, produce in batches on a large scale.
Accompanying drawing explanation
Be below the cutline of accompanying drawing of the present invention, the accompanying drawing that the present invention uses is only exemplary, can not be used for explaining protection scope of the present invention.
Fig. 1 is LED sample photo in embodiment 1;
Fig. 2 is the Si rack assumption diagram that in embodiment 1, MEMS technology makes; With
Fig. 3 is the spectral distribution graph of LED sample in embodiment 1.
Embodiment
Following examples are the further explanations to the present invention program, so that although those skilled in the art have understanding more intuitively to have specific descriptions herein with understanding principle of the present invention to foregoing invention scheme, but those skilled in the art is to be understood that, this description is carried out by means of only the mode of example, and not as the restriction about scope of the present invention.Except herein and except the exemplary embodiment described, within the scope of the invention by the amendment of those of ordinary skill in the art and other embodiments of replacement, be all considered within the scope of the invention.
Embodiment 1:
This enforcement adopts the LED luminescence chip of current main flow: growing GaN epitaxial loayer in SiC substrate, it is of a size of 1270 μm × 1270 μm.
The technical essential of the present embodiment is:
(1) adopt Si substrate as package carrier, this Si substrate is undoped high resistant monocrystalline silicon, and substrate crystal orientation is < 100 >;
(2) adopt tin cream to make its Heraeus, this tin cream is specially Sn96.5Ag3Cu0.5, and tin cream thickness is 20 μm;
(3) adopt eutectic backflow as welding means, the automatic die bond of bonder, cooling time is 10min;
(4) adopt MEMS technology directly at Si substrate manufacture support, its structure is as shown in Figure 1: adopt photoengraving to make Si substrate leave paster groove and reflecting wall, paster groove size is 1470 μm × 1470 μm × 220 μm, enclose in reflecting wall and be of a size of 4470 μm × 3000 μm × 400 μm, reflecting wall thickness is 200 μm, and by the mode of evaporation by golden uniform fold in side within the walls, layer gold thickness is 900nm, and after making, effect is as shown in Figure 2;
(5) employing refractive index is the silica gel of 1.54 is Embedding Material, and in silica gel, add the light medium that refractive index is 1.6, fluorescent powder grain degree is 17 μm;
(6) adopt convex optical window as embedding mode.
Adopt spectroscopic analysis system to test LED lamp bead, measuring current 350mA, voltage is 2.9V, and luminous flux is 133lm, and light efficiency is 130.98lm/W, and color rendering index is 74.5, and correlated colour temperature is 4850K.The spectral distribution of test gained as shown in Figure 3.As shown in Figure 3, LED lamp bead has good light emission rate.
Claims (8)
1. the LED technology based on MEMS technology, it comprises: adopt Si substrate as package carrier, tin cream is adopted to make its Heraeus, adopt eutectic backflow as welding means, adopt MEMS technology directly at Si substrate manufacture support, adopt and mix the nanoscale light medium of high index of refraction and the silica gel material of fluorescent material, adopt convex optical window as embedding mode.
2. the LED technology based on MEMS technology according to claim 1, is characterized in that: described Si substrate is made up of undoped high resistant monocrystalline silicon.
3. the LED technology based on MEMS technology according to claim 2, is characterized in that its crystal orientation is < 100 >.
4. the LED technology based on MEMS technology according to claim 1, is characterized in that: the thickness of described tin cream is less than 25 μm.
5. the LED technology based on MEMS technology according to claim 4, is characterized in that: described tin cream composition is Sn96.5Ag3Cu0.5.
6. the LED technology based on MEMS technology according to claim 1, is characterized in that: described support comprises paster groove and reflecting wall.
7. the LED technology based on MEMS technology according to claim 6, is characterized in that: be coated with the material that light reflectivity is high inside described reflecting wall.
8. the LED technology based on MEMS technology according to claim 1, is characterized in that: described fluorescent powder grain degree is 17 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510966730.1A CN105470377A (en) | 2015-12-21 | 2015-12-21 | LED packaging technology based on MEMS technology |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510966730.1A CN105470377A (en) | 2015-12-21 | 2015-12-21 | LED packaging technology based on MEMS technology |
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| CN105470377A true CN105470377A (en) | 2016-04-06 |
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| CN201510966730.1A Pending CN105470377A (en) | 2015-12-21 | 2015-12-21 | LED packaging technology based on MEMS technology |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265525A (en) * | 2019-05-17 | 2019-09-20 | 深圳市兆驰节能照明股份有限公司 | Blue-ray LED encapsulating structure, backlight module and display equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6531328B1 (en) * | 2001-10-11 | 2003-03-11 | Solidlite Corporation | Packaging of light-emitting diode |
| CN101702424A (en) * | 2009-10-23 | 2010-05-05 | 广东昭信光电科技有限公司 | LED encapsulation structure with functions of integrated light distribution and heat dissipation |
| CN102136470A (en) * | 2010-12-16 | 2011-07-27 | 河北立德电子有限公司 | Power type LED (light emitting diode) light source with low thermal resistance and high color rendering index |
-
2015
- 2015-12-21 CN CN201510966730.1A patent/CN105470377A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6531328B1 (en) * | 2001-10-11 | 2003-03-11 | Solidlite Corporation | Packaging of light-emitting diode |
| CN101702424A (en) * | 2009-10-23 | 2010-05-05 | 广东昭信光电科技有限公司 | LED encapsulation structure with functions of integrated light distribution and heat dissipation |
| CN102136470A (en) * | 2010-12-16 | 2011-07-27 | 河北立德电子有限公司 | Power type LED (light emitting diode) light source with low thermal resistance and high color rendering index |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265525A (en) * | 2019-05-17 | 2019-09-20 | 深圳市兆驰节能照明股份有限公司 | Blue-ray LED encapsulating structure, backlight module and display equipment |
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Application publication date: 20160406 |
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