CN105466974B - A kind of high voltage power supply that can realize fast gas identification function - Google Patents
A kind of high voltage power supply that can realize fast gas identification function Download PDFInfo
- Publication number
- CN105466974B CN105466974B CN201610022315.5A CN201610022315A CN105466974B CN 105466974 B CN105466974 B CN 105466974B CN 201610022315 A CN201610022315 A CN 201610022315A CN 105466974 B CN105466974 B CN 105466974B
- Authority
- CN
- China
- Prior art keywords
- module
- gas
- solar cell
- gas sensor
- glass tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Abstract
The invention discloses a kind of high voltage power supply that can realize fast gas identification function, and by the outer surface installation detecting device in high voltage power supply cabinet, the detection means is based on self energizing sensing element, and also includes data read module and gas identification module；Self energizing sensing element includes dye sensitization solar cell module and gas sensor module, working power of the dye sensitization solar cell module as gas sensor module, produce the effect of self energizing, the quick detection to pernicious gas in high voltage power supply working environment can be realized, high sensitivity, repeatability are high.
Description
Technical field
The present invention relates to field of power supplies, is more particularly to a kind of high voltage power supply that can realize fast gas identification function.
Background technology
High voltage power supply is called high pressure generator, generally refers to power supply of the output voltage more than five kilovolts, high voltage power supply
Purposes is a lot, mainly includes X-ray machine high voltage power supply, laser high voltage power supply, spectrum analysis high voltage power supply, nondestructive inspection high voltage power supply
Deng.
However, because existing high voltage power supply application is wide, when it is in different operating environment, it is proposed
New requirement functionally, such as the detection function to hazardous gas.
The content of the invention
It is an object of the invention to avoid weak point of the prior art and providing one kind can realize that fast gas is known
The high voltage power supply of other function.
The purpose of the present invention is achieved through the following technical solutions：
A kind of high voltage power supply that can realize fast gas identification function, the outer surface installation inspection of the high voltage power supply cabinet
Device is surveyed, the detection means is based on self energizing sensing element, and the self energizing sensing element includes DSSC
Module and gas sensor module；Dye sensitization of solar module can be as the working power of gas sensor module, to it
The effect of self energizing is produced, and then the quick detection to pernicious gas in high voltage power supply working environment can be realized, high sensitivity,
And it is repeated high, while reach the purpose for efficiently utilizing solar energy.
The dye sensitization solar cell module includes to electrode, light anode and is filled in described to electrode and light sun
Electrolyte between pole, it is described electrode is included stainless steel base, close to stainless steel base conductive catalytic layer, be arranged at it is described
CNT on conductive catalytic layer, the light anode include ITO electro-conductive glass substrate and in ITO electro-conductive glass substrates
TiO2Particle and dye molecules, the TiO2The particle diameter of particle about 310nm, the length to CNT on electrode are 17 μ
m；The gas sensor module includes silicon chip substrate, tungsten oxide nano and Au electrodes, rotten on the surface of the silicon chip substrate
Erosion has Porous Silicon area, and the surface evaporation of the Porous Silicon area has tungsten oxide layer film with porous silicon together as detection gas
Composite sensitive material, the aperture of the porous silicon is 10~90nm；The dye sensitization solar cell module and gas pass
Sensor module be arranged at surface have an a diameter of 0.5cm air admission hole specification be 5cm × 5cm × 1cm aluminum cuboid
In framework, the dye sensitization solar cell module, to the outer surface of the framework, and makes light anode by adhesive bonding
Upward, the gas sensor module, data read module are arranged at the lower portion, the DSSC
Module, the gas sensor module are connected with data read module by wire.
Preferably, the making of the dye sensitization solar cell module comprises the following steps：
S1：It is prepared by electrode：1. the stainless steel base that the specification for being 0.3mm from thickness is 5cm × 5cm, is thrown with sand paper
Light, it is cleaned by ultrasonic successively by acetone, ethanol, deionized water；2. metal Cr is plated in stainless steel base using magnetron sputtering method
Film and Ni films form conductive catalytic layer, and the thickness of the Cr films is 300nm, and the thickness of the Ni films is 15nm；3. utilize CVD
Method, CH4For carbon source, Ni is catalyst, grows CNT；
S2：The preparation of light anode：1. taking absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it in 50 DEG C of stirred in water bath
It is sufficiently mixed, butyl titanate 9ml is added in mixed solution, 1h is stirred in continuation in a water bath, then adds absolute ethyl alcohol 10ml,
1h is stirred in a water bath, is stood 12h, is obtained TiO2Solution, filtered, dried；2. take the TiO of 5g steps 1. middle drying2Grain
Son, the mixing of 10ml ethanol, 2ml acetylacetone,2,4-pentanediones, it is put into mortar and grinds abundant, obtained TiO2Slurry；It is 3. suitable in taking step 2.
The TiO of amount2The specification of slurry blade coating after cleaning is in 5cm × 5cm ITO electro-conductive glass substrates, by being handled at 110 DEG C
2h, 6h in N719 ethanol solution is then immersed in, produces light anode；
S3：Electrolyte quota：0.5M lithium iodides, 0.06M iodine, the tertiary yl pyridines of 0.1M 4- and 0.3M 1- propyl group -3- methyl
Iodonium imidazolide salts, solvent are volume ratio 1:1 acetonitrile and propylene carbonate mixed liquor；
S4：Assembling：Electrode will be covered in light anode, and form 50 μm of cavity between the two, edge utilizes insulator
Encapsulation, is injected the electrolyte into cavity, forms dye sensitization solar cell module；
The preparation of the gas sensor module comprises the following steps：
1. cutting silicon chip substrate size to 2cm × 2cm, it is put into cleaning fluid and is cleaned by ultrasonic 40min, cleaning fluid is volume ratio
For 3:1 98% concentrated sulfuric acid and 40% hydrogen peroxide；Take out silicon chip substrate to be rinsed well with deionized water, place into hydrofluoric acid and soak
10min is steeped, then is cleaned by ultrasonic 20min respectively with acetone, ethanol, deionized water successively；
2. using electrochemical process corrosion of silicon, corrosive liquid is prepared, corrosive liquid is volume ratio 1:3 hydrofluoric acid (40%) and go
The mixed liquor of ionized water, corrosion current 45mA/cm2, etching time 1h, formed on silicon chip substrate surface size 1.5cm ×
1cm Porous Silicon area；
3. silicon chip substrate is put into magnetic control sputtering device, one layer of tungsten film is deposited in its porous silicon region field surface, thickness is
200nm, then silicon chip substrate is put into tube furnace, seals and be passed through nitrogen under normal pressure, utilize 450 DEG C of growth tungsten oxides of CVD
Nano wire；
4. the Au electrodes of two round point shapes, the diameter of the Au electrodes are made on Porous Silicon area using magnetron sputtering method
For 1mm, thickness 100nm.
The data read module is sent to the controller being arranged inside the detection means by wireless communication module
Module, the controller module communicated by wireless communication module and GPRS module, and will be detected by the detection means
Data value is transmitted to detection data basestation；
Further, the self energizing sensing element is additionally provided with a gas identification module, the gas identification module
Connected by wire with the data read module, the gas identification module mainly connects by shell body and with shell body detachable
The gas detection means connect are formed, and the gas detection means are made up of diffusion control film layer, instruction support powder and glass tube；
The preparation process of the gas detection means is as follows：
S1：The processing and activation of carrier：The silica-gel carrier sieved (90~100 mesh) is placed in 600 DEG C of Muffle furnaces
2h is calcined, after cooling, bottling is stand-by；
S2：Indicate the preparation of carrier：The original liquid of measured amounts is put into a container, is poured into a certain amount of activation and is carried
Body, it is stirring while adding, until it is well mixed, untill supernatant liquor is less.After spontaneously drying in atmosphere, it is fitted into closed container
It is stand-by；
S3：The preparation of glass tube：Select internal diameter is uniform, glass tube that transparency is good (specification be ID2.0mm ×
OD4.0mm), some sections of the glass tube that length is 30mm is intercepted into, with sand paper by both sides feather plucking, then successively with suds, clear
Water, distilled water are clean by glass tube cleaning, dry stand-by；
S4：The preparation of diffusion control film：Film is controlled as diffusion using polyester film thick 0.5mm, after polymer PET drying,
The circular membrane for being 2.0mm into external diameter with mould punching；
S5：The assembling of gas identification module：By the diffusion control film side of adhesive bonding to glass tube, then weigh
Certain amount instruction support powder slowly loads in glass tube to glass tube tight, and opposite side diffusion control film is bonded after smooth.
The present invention is advantageous in that：
(1) present invention is based on DSSC technology and gas sensor technology, designs the gas of self energizing
Sensor, i.e., the energy of working sensor is provided with DSSC；By DSSC with it is porous
Silicon substrate gas sensor is connected, including solar module, sensor assembly, data read module and gas detection module；
Solar cell is used as the working power of sensor by solar power generation, and the effect of self energizing is produced to gas sensor,
Solar energy resources has been maximally utilized, has reduced energy waste and environmental pollution.
(2) in DSSC in electrode, generally use Pt is used as to electrode catalyst agent material, still
Platinum is a kind of noble metal, expensive, and the present invention substitutes Pt as catalyst using CNT, makes simple, catalytic efficiency
Height, it is cheap；Prepare cost to substantially reduce, be advantageous to widely popularize application；In addition, gas sensor module is adopted in the present invention
It is sensitive material with porous silicon, while tungsten oxide layer film, porous silica material and tungsten oxide material knot is deposited in porous silicon surface
Cooperate as composite sensitive material, can in quick environment-identification gas situation of change, high sensitivity is convenient and swift.
(3) present invention is provided with a gas identification module that can identify gas type behind data read module,
The instruction support powder used in the gas detection means set in the module quickly judges gas type, when its work is run
Dye sensitization solar cell module is not needed to provide energy, overall save has saved the energy, and realizes passive detection row
Deflation body；It is efficient and convenient.
Brief description of the drawings
Invention is described further using accompanying drawing, but the embodiment in accompanying drawing does not form any limitation of the invention,
For one of ordinary skill in the art, on the premise of not paying creative work, it can also be obtained according to the following drawings
Its accompanying drawing.
Fig. 1 is the schematic diagram of high voltage power supply of the present invention.
Fig. 2 is the structural representation of the dye sensitization solar cell module of the present invention.
Fig. 3 is the gas sensor module schematic top plan view of the present invention.
Fig. 4 is the sectional view of the gas sensor module of the present invention.
Fig. 5 is the dye sensitization solar cell module of the present invention and the combination schematic diagram of gas sensor module.
Fig. 6 is the structural representation of the gas identification module of the present invention.
Embodiment
In general, after gas component of the sensing element in gas sensor in extraneous test environment changes,
Its physical quantity being measured accordingly can also change, and gas sensor detects the specific gas componant to change
Come, and then converted the change of the electric signal of reflection gas componant change, such as resistance, electric capacity, dielectric etc..
Porous silicon is a kind of material with open structure, and it can be oxidized by monocrystalline silicon or polysilicon in hydrofluoric acid
To be made.Porous silicon has the advantages that good optical property, huge surface area, and at present, porous silicon is to humidity, You Jiqi
Body, NOX、COX、O2, HCl etc. show detection property.Gas sensor using porous silicon as sensitive material, mainly inhaled using it
The change of electrical conductivity carrys out detection gas after attached gas.When porous silicon is placed in detected gas environment, gas can be in porous silicon
Suction-operated occurs for surface, and gas molecule can capture hole or electronics from porous silicon surface, cause the resistance of porous silicon to become
Change, the change by measuring porous silicon resistor or conductance can measure the change of under test gas concentration.
Following technical problem be present in the gas sensor in presently relevant technology：Gas sensor at work, it is necessary to
External power supply or battery drive its work, largely can cause environmental pollution and energy waste using battery, have to environment latent
Harm, therefore, it is necessary to seek a kind of new gas sensor of environmental protection and energy saving.Solar energy is as a kind of sustainable new
The energy, it is the basis of human survival and development.In future, solar power generation is by as the main energy sources form of human society.At present,
Solar cell mainly in the form of silicon solar cell, DSSC and organic solar batteries, wherein, market
The silicon solar cell that upper major part is monocrystalline and polysilicon is representative, although it has transformation efficiency high, stable performance excellent
Point, but when preparing silicon solar cell, refining high-purity silicon material needs to expend mass energy.
Under sunshine irradiation, dye molecule absorbs luminous energy, and it is excited to excitation state by eigenstate, due to excitation state
Unstable, its excitation state electrons is transferred to the conductive layer that Nanometer Semiconductor Films pass through light anode from dye molecule, and then
To external circuit；The dye molecule for losing electronics can be by I in neighbouring electrolyte-Revert to eigenstate, and I-Ion is oxidized to
I3-, electronics is transferred to electrode from external circuit, in the presence of catalyst, by I in electrolyte3-It is reduced to I-, so circulation.
Based on this, the operation principle of device of the present invention is：DSSC and gas sensor, digital independent
Block coupled in series.Under sunlight, dye molecule absorbs luminous energy in DSSC, is excited, the electronics of release
External circuit is flowed to by light anode, loop is formed by porous silicon-base gas sensor, data detection module, to electrode, warp
The catalytic action of CNT is crossed, goes back I in original electrolyte3-Ion, it is thusly-formed working cycles；For gas sensor, in quilt
Under detection gas environment, porous silicon and tungsten oxide meeting adsorption gas molecule, its electrical conductivity is caused to change, and then act on electricity
The change of stream, now data monitoring module can detect change, finally show the gas concentration in real time.
The present invention provides a kind of high voltage power supply that can realize fast gas identification function, the outside of the high voltage power supply cabinet
Surface installation detecting device, the detection means are based on self energizing sensing element, and the self energizing sensing element includes dye sensitization
Solar module and gas sensor module；Dye sensitization of solar module can be as the work of gas sensor module
Power supply, the effect of self energizing is produced to it, and then the quick detection to pernicious gas in high voltage power supply working environment can be realized,
High sensitivity, and repeatability is high, while reach the purpose for efficiently utilizing solar energy.
Further explanation is made to the present invention with reference to legend：
Fig. 1 is high voltage power supply schematic diagram of the present invention.Detection means 2 is installed on the outer surface of the cabinet of high voltage power supply 1.
Fig. 2 is the structural representation of the dye sensitization solar cell module of the present invention.
Fig. 3 is the gas sensor module schematic top plan view of the present invention.
Fig. 4 is the sectional view of the gas sensor module of the present invention.
Fig. 5 is the dye sensitization solar cell module of the present invention and the combination schematic diagram of gas sensor module.
Fig. 6 is the structural representation of the gas identification module of the present invention.
Wherein：The stainless steel bases of 10-, 11- silicon chip substrates, 12- silicon chip substrates, 13- dye sensitization solar cell modules,
20- conductive catalytic layers, 21- Porous Silicon areas, 23- gas sensor modules, 30- electrolyte, 31-Au electrodes, 32- tungsten oxides are received
Rice noodles, 33- data read modules, 40-ITO electro-conductive glass substrates, 43- frameworks, 50- is to CNT on electrode, 53- air inlets
Hole, 60-TiO2Particle layer and dye molecules, 70- gas identification modules, 71- shell bodies, 72- gas detection means, 73- expand
Dissipate control film layer, 74- instruction support powders, 75- glass tubes.
The invention will be further described with the following Examples.
Embodiment 1
A kind of high voltage power supply that can realize fast gas identification function that embodiments of the invention are provided, the high-tension electricity
The outer surface installation detecting device of source cabinet, the detection means are based on self energizing sensing element, and also include data and read
Modulus block and gas identification module；The self energizing sensing element includes dye sensitization solar cell module and gas sensor mould
Block；The dye sensitization solar cell module include to electrode, light anode and be filled in it is described to electrode and light anode it
Between electrolyte, it is described to electrode include stainless steel base, close to stainless steel base conductive catalytic layer, be arranged at the conduction
CNT in Catalytic Layer, the light anode include ITO electro-conductive glass substrate and the TiO in ITO electro-conductive glass substrates2
Particle and dye molecules, the TiO2The particle diameter of particle about 310nm,；The gas sensor module includes silicon chip substrate, oxygen
Change tungsten nanowires and Au electrodes, corroding on the surface of the silicon chip substrate has Porous Silicon area, the surface of the Porous Silicon area
Evaporation has composite sensitive material of the tungsten oxide layer film with porous silicon together as detection gas；The dye sensitization of solar electricity
The specification that pond module and gas sensor module are arranged at surface and have the air admission hole of an a diameter of 0.5cm is 5cm × 5cm × 1cm
Aluminum cuboid framework in, appearance of the dye sensitization solar cell module by adhesive bonding to the framework
Face, and make light anode upward, the gas sensor module, data read module are arranged at the lower portion, the dyestuff
Sensitization solar battery module, the gas sensor module are connected with data read module by wire.
Preferably, the making of the dye sensitization solar cell module comprises the following steps：
S1：It is prepared by electrode：1. the stainless steel base that the specification for being 0.3mm from thickness is 5cm × 5cm, is thrown with sand paper
Light, it is cleaned by ultrasonic successively by acetone, ethanol, deionized water；2. metal Cr is plated in stainless steel base using magnetron sputtering method
Film and Ni films form conductive catalytic layer, and the thickness of the Cr films is 500nm, and the thickness of the Ni films is 10nm；3. utilize CVD
Method, CH4For carbon source, Ni is catalyst, grows CNT；
S2：The preparation of light anode：1. taking absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it in 50 DEG C of stirred in water bath
It is sufficiently mixed, butyl titanate 9ml is added in mixed solution, 1h is stirred in continuation in a water bath, then adds absolute ethyl alcohol 10ml,
1h is stirred in a water bath, is stood 12h, is obtained TiO2Solution, filtered, dried；2. take the TiO of 5g steps 1. middle drying2Grain
Son, the mixing of 10ml ethanol, 2ml acetylacetone,2,4-pentanediones, it is put into mortar and grinds abundant, obtained TiO2Slurry；It is 3. suitable in taking step 2.
The TiO of amount2The specification of slurry blade coating after cleaning is in 5cm × 5cm ITO electro-conductive glass substrates, by being handled at 110 DEG C
2h, 6h in N719 ethanol solution is then immersed in, produces light anode；
S3：Electrolyte quota：0.5M lithium iodides, 0.06M iodine, the tertiary yl pyridines of 0.1M 4- and 0.3M 1- propyl group -3- methyl
Iodonium imidazolide salts, solvent are volume ratio 1:1 acetonitrile and propylene carbonate mixed liquor；
S4：Assembling：Electrode will be covered in light anode, and form 50 μm of cavity between the two, edge utilizes insulator
Encapsulation, is injected the electrolyte into cavity, forms dye sensitization solar cell module；
The preparation of the gas sensor module comprises the following steps：
1. cutting silicon chip substrate size to 2cm × 2cm, it is put into cleaning fluid and is cleaned by ultrasonic 40min, cleaning fluid is volume ratio
For 3:1 98% concentrated sulfuric acid and 40% hydrogen peroxide；Take out silicon chip substrate to be rinsed well with deionized water, place into hydrofluoric acid and soak
10min is steeped, then is cleaned by ultrasonic 20min respectively with acetone, ethanol, deionized water successively；
2. using electrochemical process corrosion of silicon, corrosive liquid is prepared, corrosive liquid is volume ratio 1:3 hydrofluoric acid (40%) and go
The mixed liquor of ionized water, corrosion current 45mA/cm2, etching time 1h, formed on silicon chip substrate surface size 1.5cm ×
1cm Porous Silicon area；
3. silicon chip substrate is put into magnetic control sputtering device, one layer of tungsten film is deposited in its porous silicon region field surface, thickness is
200nm, then silicon chip substrate is put into tube furnace, seals and be passed through nitrogen under normal pressure, utilize 450 DEG C of growth tungsten oxides of CVD
Nano wire；
4. the Au electrodes of two round point shapes, the diameter of the Au electrodes are made on Porous Silicon area using magnetron sputtering method
For 1mm, thickness 100nm.
The data read module is sent to the controller being arranged inside the detection means by wireless communication module
Module, the controller module communicated by wireless communication module and GPRS module, and will be detected by the detection means
Data value is transmitted to detection data basestation；
Further, the self energizing sensing element is additionally provided with a gas identification module, the gas identification module
Connected by wire with the data read module, the gas identification module mainly connects by shell body and with shell body detachable
The gas detection means connect are formed, and the gas detection means are made up of diffusion control film layer, instruction support powder and glass tube；
The preparation process of the gas detection means is as follows：
S1：The processing and activation of carrier：The silica-gel carrier sieved (90~100 mesh) is placed in 600 DEG C of Muffle furnaces
2h is calcined, after cooling, bottling is stand-by；
S2：Indicate the preparation of carrier：The original liquid of measured amounts is put into a container, is poured into a certain amount of activation and is carried
Body, it is stirring while adding, until it is well mixed, untill supernatant liquor is less.After spontaneously drying in atmosphere, it is fitted into closed container
It is stand-by；
S3：The preparation of glass tube：Select internal diameter is uniform, glass tube that transparency is good (specification be ID2.0mm ×
OD4.0mm), some sections of the glass tube that length is 30mm is intercepted into, with sand paper by both sides feather plucking, then successively with suds, clear
Water, distilled water are clean by glass tube cleaning, dry stand-by；
S4：The preparation of diffusion control film：Film is controlled as diffusion using polyester film thick 0.5mm, after polymer PET drying,
The circular membrane for being 2.0mm into external diameter with mould punching；
S5：The assembling of gas identification module：By the diffusion control film side of adhesive bonding to glass tube, then weigh
Certain amount instruction support powder slowly loads in glass tube to glass tube tight, and opposite side diffusion control film is bonded after smooth.
Test data：
In obtained device, the length to CNT on electrode of DSSC is about 17 μm, gas
The aperture of porous silicon about 10~90nm in sensor；During test, the device is put into 1m3Light tight hermetical testing container, take
100mW/cm2Xenon source simulated solar irradiation, the NO of various concentrations is passed through into test container respectively2Gas.
The sensitivity of gas is represented with following formula：R%=(I0±It/I0) × 100%, in formula, in the feelings that light source power is constant
Under condition, I0Not to be passed through NO2When device in size of current, ItTo be passed through NO2Size of current when testing gas in device.
Test is obtained, the optimal transformation efficiency about 11.2% of DSSC, and test is sent out after repeating 2000 times
Existing, DSSC transformation efficiency drops to 8.3%, reproducible；When about 40 DEG C of gas sensor operating temperature
When, its selectivity and sensitivity to gas is put up the best performance, wherein, to NO2The detection limit of gas is 5ppm, to 100ppm
NO2, sensitivity 72, response time 7s；To NH3The detection limit of gas is 5ppm, to 100ppm NH3, sensitivity reaches
56, response time 9s.
Embodiment 2：
A kind of high voltage power supply that can realize fast gas identification function that embodiments of the invention are provided, the high-tension electricity
The outer surface installation detecting device of source cabinet, the detection means are based on self energizing sensing element, and also include data and read
Modulus block and gas identification module；The self energizing sensing element includes dye sensitization solar cell module and gas sensor mould
Block；The dye sensitization solar cell module include to electrode, light anode and be filled in it is described to electrode and light anode it
Between electrolyte, it is described to electrode include stainless steel base, close to stainless steel base conductive catalytic layer, be arranged at the conduction
CNT in Catalytic Layer, the light anode include ITO electro-conductive glass substrate and the TiO in ITO electro-conductive glass substrates2
Particle and dye molecules, the TiO2The particle diameter of particle about 320nm；The gas sensor module includes silicon chip substrate, oxygen
Change tungsten nanowires and Au electrodes, corroding on the surface of the silicon chip substrate has Porous Silicon area, the surface of the Porous Silicon area
Evaporation has composite sensitive material of the tungsten oxide layer film with porous silicon together as detection gas；The dye sensitization of solar electricity
The specification that pond module and gas sensor module are arranged at surface and have the air admission hole of an a diameter of 0.5cm is 5cm × 5cm × 1cm
Aluminum cuboid framework in, appearance of the dye sensitization solar cell module by adhesive bonding to the framework
Face, and make light anode upward, the gas sensor module, data read module are arranged at the lower portion, the dyestuff
Sensitization solar battery module, the gas sensor module are connected with data read module by wire.
Preferably, the making of the dye sensitization solar cell module comprises the following steps：
S1：It is prepared by electrode：1. the stainless steel base that the specification for being 0.3mm from thickness is 5cm × 5cm, is thrown with sand paper
Light, it is cleaned by ultrasonic successively by acetone, ethanol, deionized water；2. metal Cr is plated in stainless steel base using magnetron sputtering method
Film and Ni films form conductive catalytic layer, and the thickness of the Cr films is 300nm, and the thickness of the Ni films is 7nm；3. CVD is utilized,
CH4For carbon source, Ni is catalyst, grows CNT；
S2：The preparation of light anode：1. taking absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it in 50 DEG C of stirred in water bath
It is sufficiently mixed, butyl titanate 9ml is added in mixed solution, 1h is stirred in continuation in a water bath, then adds absolute ethyl alcohol 10ml,
1h is stirred in a water bath, is stood 12h, is obtained TiO2Solution, filtered, dried；2. take the TiO of 5g steps 1. middle drying2Grain
Son, the mixing of 10ml ethanol, 2ml acetylacetone,2,4-pentanediones, it is put into mortar and grinds abundant, obtained TiO2Slurry；It is 3. suitable in taking step 2.
The TiO of amount2The specification of slurry blade coating after cleaning is in 5cm × 5cm ITO electro-conductive glass substrates, by being handled at 110 DEG C
2h, 6h in N719 ethanol solution is then immersed in, produces light anode；
S3：Electrolyte quota：0.5M lithium iodides, 0.06M iodine, the tertiary yl pyridines of 0.1M 4- and 0.3M 1- propyl group -3- methyl
Iodonium imidazolide salts, solvent are volume ratio 1:1 acetonitrile and propylene carbonate mixed liquor；
S4：Assembling：Electrode will be covered in light anode, and form 30 μm of cavity between the two, edge utilizes insulator
Encapsulation, is injected the electrolyte into cavity, forms dye sensitization solar cell module；
The preparation of the gas sensor module comprises the following steps：
1. cutting silicon chip substrate size to 2cm × 2cm, it is put into cleaning fluid and is cleaned by ultrasonic 40min, cleaning fluid is volume ratio
For 3:1 98% concentrated sulfuric acid and 40% hydrogen peroxide；Take out silicon chip substrate to be rinsed well with deionized water, place into hydrofluoric acid and soak
10min is steeped, then is cleaned by ultrasonic 20min respectively with acetone, ethanol, deionized water successively；
2. using electrochemical process corrosion of silicon, corrosive liquid is prepared, corrosive liquid is volume ratio 2:3 hydrofluoric acid (40%) and go
The mixed liquor of ionized water, corrosion current 40mA/cm2, etching time 2h, formed on silicon chip substrate surface size 1.5cm ×
1cm Porous Silicon area；
3. silicon chip substrate is put into magnetic control sputtering device, one layer of tungsten film is deposited in its porous silicon region field surface, thickness is
200nm, then silicon chip substrate is put into tube furnace, seals and be passed through nitrogen under normal pressure, utilize 450 DEG C of growth tungsten oxides of CVD
Nano wire；
4. the Au electrodes of two round point shapes, the diameter of the Au electrodes are made on Porous Silicon area using magnetron sputtering method
For 1mm, thickness 60nm.
The data read module is sent to the controller being arranged inside the detection means by wireless communication module
Module, the controller module communicated by wireless communication module and GPRS module, and will be detected by the detection means
Data value is transmitted to detection data basestation；
Further, the self energizing sensing element is additionally provided with a gas identification module, the gas identification module
Connected by wire with the data read module, the gas identification module mainly connects by shell body and with shell body detachable
The gas detection means connect are formed, and the gas detection means are made up of diffusion control film layer, instruction support powder and glass tube；
The preparation process of the gas detection means is as follows：
S1：The processing and activation of carrier：The silica-gel carrier sieved (90~100 mesh) is placed in 600 DEG C of Muffle furnaces
2h is calcined, after cooling, bottling is stand-by；
S2：Indicate the preparation of carrier：The original liquid of measured amounts is put into a container, is poured into a certain amount of activation and is carried
Body, it is stirring while adding, until it is well mixed, untill supernatant liquor is less.After spontaneously drying in atmosphere, it is fitted into closed container
It is stand-by；
S3：The preparation of glass tube：Select internal diameter is uniform, glass tube that transparency is good (specification be ID2.0mm ×
OD4.0mm), some sections of the glass tube that length is 30mm is intercepted into, with sand paper by both sides feather plucking, then successively with suds, clear
Water, distilled water are clean by glass tube cleaning, dry stand-by；
S4：The preparation of diffusion control film：Film is controlled as diffusion using polyester film thick 0.5mm, after polymer PET drying,
The circular membrane for being 2.0mm into external diameter with mould punching；
S5：The assembling of gas identification module：By the diffusion control film side of adhesive bonding to glass tube, then weigh
Certain amount instruction support powder slowly loads in glass tube to glass tube tight, and opposite side diffusion control film is bonded after smooth.
Test data：
In obtained device, the length to CNT on electrode of DSSC is about 19 μm, gas
The aperture of porous silicon about 20~80nm in sensor；During test, the device is put into 1m3Light tight hermetical testing container, take
100mW/cm2Xenon source simulated solar irradiation, the NO of various concentrations is passed through into test container respectively2Gas.
The sensitivity of gas is represented with following formula：R%=(I0±It/I0) × 100%, in formula, in the feelings that light source power is constant
Under condition, I0Not to be passed through NO2When device in size of current, ItTo be passed through NO2Size of current when testing gas in device.
Test is obtained, the optimal transformation efficiency about 10.2% of DSSC, and test is sent out after repeating 2000 times
Existing, DSSC transformation efficiency drops to 8.1%, reproducible；When about 40 DEG C of gas sensor operating temperature
When, its selectivity and sensitivity to gas is put up the best performance, wherein, to NO2The detection limit of gas is 12ppm, right
100ppm NO2, sensitivity 52, response time 19s；To NH3The detection limit of gas is 9ppm, to 100ppm NH3, spirit
Sensitivity is up to 50, response time 16s.
Embodiment 3
A kind of high voltage power supply that can realize fast gas identification function that embodiments of the invention are provided, the high-tension electricity
The outer surface installation detecting device of source cabinet, the detection means are based on self energizing sensing element, and also include data and read
Modulus block and gas identification module；The self energizing sensing element includes dye sensitization solar cell module and gas sensor mould
Block；The dye sensitization solar cell module include to electrode, light anode and be filled in it is described to electrode and light anode it
Between electrolyte, it is described to electrode include stainless steel base, close to stainless steel base conductive catalytic layer, be arranged at the conduction
CNT in Catalytic Layer, the light anode include ITO electro-conductive glass substrate and the TiO in ITO electro-conductive glass substrates2
Particle and dye molecules, the TiO2The particle diameter of particle about 320nm；The gas sensor module includes silicon chip substrate, oxygen
Change tungsten nanowires and Au electrodes, corroding on the surface of the silicon chip substrate has Porous Silicon area, the surface of the Porous Silicon area
Evaporation has composite sensitive material of the tungsten oxide layer film with porous silicon together as detection gas；The dye sensitization of solar electricity
The specification that pond module and gas sensor module are arranged at surface and have the air admission hole of an a diameter of 0.5cm is 5cm × 5cm × 1cm
Aluminum cuboid framework in, appearance of the dye sensitization solar cell module by adhesive bonding to the framework
Face, and make light anode upward, the gas sensor module, data read module are arranged at the lower portion, the dyestuff
Sensitization solar battery module, the gas sensor module are connected with data read module by wire.
Preferably, the making of the dye sensitization solar cell module comprises the following steps：
S1：It is prepared by electrode：1. the stainless steel base that the specification for being 0.3mm from thickness is 5cm × 5cm, is thrown with sand paper
Light, it is cleaned by ultrasonic successively by acetone, ethanol, deionized water；2. metal Cr is plated in stainless steel base using magnetron sputtering method
Film and Ni films form conductive catalytic layer, and the thickness of the Cr films is 260nm, and the thickness of the Ni films is 15nm；3. utilize CVD
Method, CH4For carbon source, Ni is catalyst, grows CNT；
S2：The preparation of light anode：1. taking absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it in 50 DEG C of stirred in water bath
It is sufficiently mixed, butyl titanate 9ml is added in mixed solution, 1h is stirred in continuation in a water bath, then adds absolute ethyl alcohol 10ml,
1h is stirred in a water bath, is stood 12h, is obtained TiO2Solution, filtered, dried；2. take the TiO of 5g steps 1. middle drying2Grain
Son, the mixing of 10ml ethanol, 2ml acetylacetone,2,4-pentanediones, it is put into mortar and grinds abundant, obtained TiO2Slurry；It is 3. suitable in taking step 2.
The TiO of amount2The specification of slurry blade coating after cleaning is in 5cm × 5cm ITO electro-conductive glass substrates, by being handled at 110 DEG C
2h, 6h in N719 ethanol solution is then immersed in, produces light anode；
S3：Electrolyte quota：0.5M lithium iodides, 0.06M iodine, the tertiary yl pyridines of 0.2M 4- and 0.3M 1- propyl group -3- methyl
Iodonium imidazolide salts, solvent are volume ratio 1:1 acetonitrile and propylene carbonate mixed liquor；
S4：Assembling：Electrode will be covered in light anode, and form 50 μm of cavity between the two, edge utilizes insulator
Encapsulation, is injected the electrolyte into cavity, forms dye sensitization solar cell module；
The preparation of the gas sensor module comprises the following steps：
1. cutting silicon chip substrate size to 2cm × 2cm, it is put into cleaning fluid and is cleaned by ultrasonic 40min, cleaning fluid is volume ratio
For 3:1 98% concentrated sulfuric acid and 40% hydrogen peroxide；Take out silicon chip substrate to be rinsed well with deionized water, place into hydrofluoric acid and soak
10min is steeped, then is cleaned by ultrasonic 20min respectively with acetone, ethanol, deionized water successively；
2. using electrochemical process corrosion of silicon, corrosive liquid is prepared, corrosive liquid is volume ratio 1:5 hydrofluoric acid (40%) and go
The mixed liquor of ionized water, corrosion current 20mA/cm2, etching time 1h, formed on silicon chip substrate surface size 1.5cm ×
1cm Porous Silicon area；
3. silicon chip substrate is put into magnetic control sputtering device, one layer of tungsten film is deposited in its porous silicon region field surface, thickness is
200nm, then silicon chip substrate is put into tube furnace, seals and be passed through nitrogen under normal pressure, utilize 450 DEG C of growth tungsten oxides of CVD
Nano wire；
4. the Au electrodes of two round point shapes, the diameter of the Au electrodes are made on Porous Silicon area using magnetron sputtering method
For 1mm, thickness 100nm.
The data read module is sent to the controller being arranged inside the detection means by wireless communication module
Module, the controller module communicated by wireless communication module and GPRS module, and will be detected by the detection means
Data value is transmitted to detection data basestation；
Further, the self energizing sensing element is additionally provided with a gas identification module, the gas identification module
Connected by wire with the data read module, the gas identification module mainly connects by shell body and with shell body detachable
The gas detection means connect are formed, and the gas detection means are made up of diffusion control film layer, instruction support powder and glass tube；
The preparation process of the gas detection means is as follows：
S1：The processing and activation of carrier：The silica-gel carrier sieved (90~100 mesh) is placed in 600 DEG C of Muffle furnaces
2h is calcined, after cooling, bottling is stand-by；
S2：Indicate the preparation of carrier：The original liquid of measured amounts is put into a container, is poured into a certain amount of activation and is carried
Body, it is stirring while adding, until it is well mixed, untill supernatant liquor is less.After spontaneously drying in atmosphere, it is fitted into closed container
It is stand-by；
S3：The preparation of glass tube：Select internal diameter is uniform, glass tube that transparency is good (specification be ID2.0mm ×
OD4.0mm), some sections of the glass tube that length is 30mm is intercepted into, with sand paper by both sides feather plucking, then successively with suds, clear
Water, distilled water are clean by glass tube cleaning, dry stand-by；
S4：The preparation of diffusion control film：Film is controlled as diffusion using polyester film thick 0.5mm, after polymer PET drying,
The circular membrane for being 2.0mm into external diameter with mould punching；
S5：The assembling of gas identification module：By the diffusion control film side of adhesive bonding to glass tube, then weigh
Certain amount instruction support powder slowly loads in glass tube to glass tube tight, and opposite side diffusion control film is bonded after smooth.
Test data：
In obtained device, the length to CNT on electrode of DSSC is about 9 μm, and gas passes
The aperture of porous silicon about 5~50nm in sensor；During test, the device is put into 1m3Light tight hermetical testing container, take
100mW/cm2Xenon source simulated solar irradiation, the NO of various concentrations is passed through into test container respectively2Gas.
The sensitivity of gas is represented with following formula：R%=(I0±It/I0) × 100%, in formula, in the feelings that light source power is constant
Under condition, I0Not to be passed through NO2When device in size of current, ItTo be passed through NO2Size of current when testing gas in device.
Test is obtained, the optimal transformation efficiency about 10.3% of DSSC, and test is sent out after repeating 2000 times
Existing, DSSC transformation efficiency drops to 7.7%, reproducible；When about 40 DEG C of gas sensor operating temperature
When, its selectivity and sensitivity to gas is put up the best performance, wherein, to NO2The detection limit of gas is 16ppm, right
100ppm NO2, sensitivity 51, response time 21s；To NH3The detection limit of gas is 13ppm, to 100ppm NH3, spirit
Sensitivity is up to 29, response time 17s.
Embodiment 4
A kind of high voltage power supply that can realize fast gas identification function that embodiments of the invention are provided, the high-tension electricity
The outer surface installation detecting device of source cabinet, the detection means are based on self energizing sensing element, and also include data and read
Modulus block and gas identification module；The self energizing sensing element includes dye sensitization solar cell module and gas sensor mould
Block；The dye sensitization solar cell module include to electrode, light anode and be filled in it is described to electrode and light anode it
Between electrolyte, it is described to electrode include stainless steel base, close to stainless steel base conductive catalytic layer, be arranged at the conduction
CNT in Catalytic Layer, the light anode include ITO electro-conductive glass substrate and the TiO in ITO electro-conductive glass substrates2
Particle and dye molecules, the TiO2The particle diameter of particle about 330nm；The gas sensor module includes silicon chip substrate, oxygen
Change tungsten nanowires and Au electrodes, corroding on the surface of the silicon chip substrate has Porous Silicon area, the surface of the Porous Silicon area
Evaporation has composite sensitive material of the tungsten oxide layer film with porous silicon together as detection gas；The dye sensitization of solar electricity
The specification that pond module and gas sensor module are arranged at surface and have the air admission hole of an a diameter of 0.5cm is 5cm × 5cm × 1cm
Aluminum cuboid framework in, appearance of the dye sensitization solar cell module by adhesive bonding to the framework
Face, and make light anode upward, the gas sensor module, data read module are arranged at the lower portion, the dyestuff
Sensitization solar battery module, the gas sensor module are connected with data read module by wire.
Preferably, the making of the dye sensitization solar cell module comprises the following steps：
S1：It is prepared by electrode：1. the stainless steel base that the specification for being 0.3mm from thickness is 5cm × 5cm, is thrown with sand paper
Light, it is cleaned by ultrasonic successively by acetone, ethanol, deionized water；2. metal Cr is plated in stainless steel base using magnetron sputtering method
Film and Ni films form conductive catalytic layer, and the thickness of the Cr films is 350nm, and the thickness of the Ni films is 15nm；3. utilize CVD
Method, CH4For carbon source, Ni is catalyst, grows CNT；
S2：The preparation of light anode：1. taking absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it in 50 DEG C of stirred in water bath
It is sufficiently mixed, butyl titanate 5ml is added in mixed solution, 1h is stirred in continuation in a water bath, then adds absolute ethyl alcohol 10ml,
1h is stirred in a water bath, is stood 12h, is obtained TiO2Solution, filtered, dried；2. take the TiO of 5g steps 1. middle drying2Grain
Son, the mixing of 10ml ethanol, 6ml acetylacetone,2,4-pentanediones, it is put into mortar and grinds abundant, obtained TiO2Slurry；It is 3. suitable in taking step 2.
The TiO of amount2The specification of slurry blade coating after cleaning is in 5cm × 5cm ITO electro-conductive glass substrates, by being handled at 110 DEG C
2h, 6h in N719 ethanol solution is then immersed in, produces light anode；
S3：Electrolyte quota：0.5M lithium iodides, 0.06M iodine, the tertiary yl pyridines of 0.1M 4- and 0.3M 1- propyl group -3- methyl
Iodonium imidazolide salts, solvent are volume ratio 1:1 acetonitrile and propylene carbonate mixed liquor；
S4：Assembling：Electrode will be covered in light anode, and form 50 μm of cavity between the two, edge utilizes insulator
Encapsulation, is injected the electrolyte into cavity, forms dye sensitization solar cell module；
The preparation of the gas sensor module comprises the following steps：
1. cutting silicon chip substrate size to 2cm × 2cm, it is put into cleaning fluid and is cleaned by ultrasonic 40min, cleaning fluid is volume ratio
For 3:1 98% concentrated sulfuric acid and 40% hydrogen peroxide；Take out silicon chip substrate to be rinsed well with deionized water, place into hydrofluoric acid and soak
10min is steeped, then is cleaned by ultrasonic 20min respectively with acetone, ethanol, deionized water successively；
2. using electrochemical process corrosion of silicon, corrosive liquid is prepared, corrosive liquid is volume ratio 2:3 hydrofluoric acid (40%) and go
The mixed liquor of ionized water, corrosion current 48mA/cm2, etching time 1h, formed on silicon chip substrate surface size 1.5cm ×
1cm Porous Silicon area；
3. silicon chip substrate is put into magnetic control sputtering device, one layer of tungsten film is deposited in its porous silicon region field surface, thickness is
200nm, then silicon chip substrate is put into tube furnace, seals and be passed through nitrogen under normal pressure, utilize 450 DEG C of growth tungsten oxides of CVD
Nano wire；
4. the Au electrodes of two round point shapes, the diameter of the Au electrodes are made on Porous Silicon area using magnetron sputtering method
For 1mm, thickness 70nm.
The data read module is sent to the controller being arranged inside the detection means by wireless communication module
Module, the controller module communicated by wireless communication module and GPRS module, and will be detected by the detection means
Data value is transmitted to detection data basestation；
Further, the self energizing sensing element is additionally provided with a gas identification module, the gas identification module
Connected by wire with the data read module, the gas identification module mainly connects by shell body and with shell body detachable
The gas detection means connect are formed, and the gas detection means are made up of diffusion control film layer, instruction support powder and glass tube；
The preparation process of the gas detection means is as follows：
S1：The processing and activation of carrier：The silica-gel carrier sieved (90~100 mesh) is placed in 600 DEG C of Muffle furnaces
2h is calcined, after cooling, bottling is stand-by；
S2：Indicate the preparation of carrier：The original liquid of measured amounts is put into a container, is poured into a certain amount of activation and is carried
Body, it is stirring while adding, until it is well mixed, untill supernatant liquor is less.After spontaneously drying in atmosphere, it is fitted into closed container
It is stand-by；
S3：The preparation of glass tube：Select internal diameter is uniform, glass tube that transparency is good (specification be ID2.0mm ×
OD4.0mm), some sections of the glass tube that length is 30mm is intercepted into, with sand paper by both sides feather plucking, then successively with suds, clear
Water, distilled water are clean by glass tube cleaning, dry stand-by；
S4：The preparation of diffusion control film：Film is controlled as diffusion using polyester film thick 0.5mm, after polymer PET drying,
The circular membrane for being 2.0mm into external diameter with mould punching；
S5：The assembling of gas identification module：By the diffusion control film side of adhesive bonding to glass tube, then weigh
Certain amount instruction support powder slowly loads in glass tube to glass tube tight, and opposite side diffusion control film is bonded after smooth.
Test data：
In obtained device, the length to CNT on electrode of DSSC is about 8 μm, and gas passes
The aperture of porous silicon about 20~40nm in sensor；During test, the device is put into 1m3Light tight hermetical testing container, take
100mW/cm2Xenon source simulated solar irradiation, the NO of various concentrations is passed through into test container respectively2Gas.
The sensitivity of gas is represented with following formula：R%=(I0±It/I0) × 100%, in formula, in the feelings that light source power is constant
Under condition, I0Not to be passed through NO2When device in size of current, ItTo be passed through NO2Size of current when testing gas in device.
Test is obtained, the optimal transformation efficiency about 8.9% of DSSC, and test is sent out after repeating 2000 times
Existing, DSSC transformation efficiency drops to 6.4%, reproducible；When about 40 DEG C of gas sensor operating temperature
When, its selectivity and sensitivity to gas is put up the best performance, wherein, to NO2The detection limit of gas is 26ppm, right
100ppm NO2, sensitivity 39, response time 15s；To NH3The detection limit of gas is 12ppm, to 100ppm NH3, spirit
Sensitivity is up to 37, response time 19s.
Embodiment 5
A kind of high voltage power supply that can realize fast gas identification function that embodiments of the invention are provided, the high-tension electricity
The outer surface installation detecting device of source cabinet, the detection means are based on self energizing sensing element, and also include data and read
Modulus block and gas identification module；The self energizing sensing element includes dye sensitization solar cell module and gas sensor mould
Block；The dye sensitization solar cell module include to electrode, light anode and be filled in it is described to electrode and light anode it
Between electrolyte, it is described to electrode include stainless steel base, close to stainless steel base conductive catalytic layer, be arranged at the conduction
CNT in Catalytic Layer, the light anode include ITO electro-conductive glass substrate and the TiO in ITO electro-conductive glass substrates2
Particle and dye molecules, the TiO2The particle diameter of particle about 340nm；The gas sensor module includes silicon chip substrate, oxygen
Change tungsten nanowires and Au electrodes, corroding on the surface of the silicon chip substrate has Porous Silicon area, the surface of the Porous Silicon area
Evaporation has composite sensitive material of the tungsten oxide layer film with porous silicon together as detection gas；The dye sensitization of solar electricity
The specification that pond module and gas sensor module are arranged at surface and have the air admission hole of an a diameter of 0.5cm is 5cm × 5cm × 1cm
Aluminum cuboid framework in, appearance of the dye sensitization solar cell module by adhesive bonding to the framework
Face, and make light anode upward, the gas sensor module, data read module are arranged at the lower portion, the dyestuff
Sensitization solar battery module, the gas sensor module are connected with data read module by wire.
Preferably, the making of the dye sensitization solar cell module comprises the following steps：
S1：It is prepared by electrode：1. the stainless steel base that the specification for being 0.3mm from thickness is 5cm × 5cm, is thrown with sand paper
Light, it is cleaned by ultrasonic successively by acetone, ethanol, deionized water；2. metal Cr is plated in stainless steel base using magnetron sputtering method
Film and Ni films form conductive catalytic layer, and the thickness of the Cr films is 300nm, and the thickness of the Ni films is 15nm；3. utilize CVD
Method, CH4For carbon source, Ni is catalyst, grows CNT；
S2：The preparation of light anode：1. taking absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it in 50 DEG C of stirred in water bath
It is sufficiently mixed, butyl titanate 9ml is added in mixed solution, 1h is stirred in continuation in a water bath, then adds absolute ethyl alcohol 10ml,
1h is stirred in a water bath, is stood 12h, is obtained TiO2Solution, filtered, dried；2. take the TiO of 5g steps 1. middle drying2Grain
Son, the mixing of 10ml ethanol, 2ml acetylacetone,2,4-pentanediones, it is put into mortar and grinds abundant, obtained TiO2Slurry；It is 3. suitable in taking step 2.
The TiO of amount2The specification of slurry blade coating after cleaning is in 5cm × 5cm ITO electro-conductive glass substrates, by being handled at 110 DEG C
2h, 6h in N719 ethanol solution is then immersed in, produces light anode；
S3：Electrolyte quota：0.5M lithium iodides, 0.06M iodine, the tertiary yl pyridines of 0.1M 4- and 0.3M 1- propyl group -3- methyl
Iodonium imidazolide salts, solvent are volume ratio 1:1 acetonitrile and propylene carbonate mixed liquor；
S4：Assembling：Electrode will be covered in light anode, and form 50 μm of cavity between the two, edge utilizes insulator
Encapsulation, is injected the electrolyte into cavity, forms dye sensitization solar cell module；
The preparation of the gas sensor module comprises the following steps：
1. cutting silicon chip substrate size to 2cm × 2cm, it is put into cleaning fluid and is cleaned by ultrasonic 40min, cleaning fluid is volume ratio
For 3:1 98% concentrated sulfuric acid and 40% hydrogen peroxide；Take out silicon chip substrate to be rinsed well with deionized water, place into hydrofluoric acid and soak
10min is steeped, then is cleaned by ultrasonic 20min respectively with acetone, ethanol, deionized water successively；
2. using electrochemical process corrosion of silicon, corrosive liquid is prepared, corrosive liquid is volume ratio 1:3 hydrofluoric acid (40%) and go
The mixed liquor of ionized water, corrosion current 25mA/cm2, etching time 1h, formed on silicon chip substrate surface size 1.5cm ×
1cm Porous Silicon area；
3. silicon chip substrate is put into magnetic control sputtering device, one layer of tungsten film is deposited in its porous silicon region field surface, thickness is
200nm, then silicon chip substrate is put into tube furnace, seals and be passed through nitrogen under normal pressure, utilize 450 DEG C of growth tungsten oxides of CVD
Nano wire；
4. the Au electrodes of two round point shapes, the diameter of the Au electrodes are made on Porous Silicon area using magnetron sputtering method
For 1mm, thickness 100nm.
The data read module is sent to the controller being arranged inside the detection means by wireless communication module
Module, the controller module communicated by wireless communication module and GPRS module, and will be detected by the detection means
Data value is transmitted to detection data basestation；
Further, the self energizing sensing element is additionally provided with a gas identification module, the gas identification module
Connected by wire with the data read module, the gas identification module mainly connects by shell body and with shell body detachable
The gas detection means connect are formed, and the gas detection means are made up of diffusion control film layer, instruction support powder and glass tube；
The preparation process of the gas detection means is as follows：
S1：The processing and activation of carrier：The silica-gel carrier sieved (90~100 mesh) is placed in 600 DEG C of Muffle furnaces
2h is calcined, after cooling, bottling is stand-by；
S2：Indicate the preparation of carrier：The original liquid of measured amounts is put into a container, is poured into a certain amount of activation and is carried
Body, it is stirring while adding, until it is well mixed, untill supernatant liquor is less.After spontaneously drying in atmosphere, it is fitted into closed container
It is stand-by；
S3：The preparation of glass tube：Select internal diameter is uniform, glass tube that transparency is good (specification be ID2.0mm ×
OD4.0mm), some sections of the glass tube that length is 30mm is intercepted into, with sand paper by both sides feather plucking, then successively with suds, clear
Water, distilled water are clean by glass tube cleaning, dry stand-by；
S4：The preparation of diffusion control film：Film is controlled as diffusion using polyester film thick 0.5mm, after polymer PET drying,
The circular membrane for being 2.0mm into external diameter with mould punching；
S5：The assembling of gas identification module：By the diffusion control film side of adhesive bonding to glass tube, then weigh
Certain amount instruction support powder slowly loads in glass tube to glass tube tight, and opposite side diffusion control film is bonded after smooth.
Test data：
In obtained device, the length to CNT on electrode of DSSC is about 9 μm, and gas passes
The aperture of porous silicon about 30~70nm in sensor；During test, the device is put into 1m3Light tight hermetical testing container, take
100mW/cm2Xenon source simulated solar irradiation, the NO of various concentrations is passed through into test container respectively2Gas.
The sensitivity of gas is represented with following formula：R%=(I0±It/I0) × 100%, in formula, in the feelings that light source power is constant
Under condition, I0Not to be passed through NO2When device in size of current, ItTo be passed through NO2Size of current when testing gas in device.
Test is obtained, the optimal transformation efficiency about 11.3% of DSSC, and test is sent out after repeating 2000 times
Existing, DSSC transformation efficiency drops to 9.7%, reproducible；When about 40 DEG C of gas sensor operating temperature
When, its selectivity and sensitivity to gas is put up the best performance, wherein, to NO2The detection limit of gas is 14ppm, right
100ppm NO2, sensitivity 69, response time 15s；To NH3The detection limit of gas is 25ppm, to 100ppm NH3, spirit
Sensitivity is up to 36, response time 23s.
Finally it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than the present invention is protected
The limitation of scope is protected, although being explained with reference to preferred embodiment to the present invention, one of ordinary skill in the art should
Work as understanding, technical scheme can be modified or equivalent substitution, without departing from the reality of technical solution of the present invention
Matter and scope.
Claims (1)
- A kind of 1. high voltage power supply that can realize fast gas identification function, it is characterised in that：Outside the high voltage power supply cabinet Portion surface installation detecting device, the detection means is based on self energizing sensing element, and also includes data read module and gas Identification module；The self energizing sensing element includes dye sensitization solar cell module (13) and gas sensor module (23)； The dye sensitization solar cell module (13) include to electrode, light anode and be filled in it is described to electrode and light anode it Between electrolyte (30), it is described to electrode include stainless steel base (10), the conductive catalytic layer close to stainless steel base (10) (20) CNT (50), being arranged on the conductive catalytic layer (20), the light anode include ITO electro-conductive glass substrates And the TiO in ITO electro-conductive glass substrate (40) (40)2Particle and dye molecules (60), the TiO2The particle diameter of particle 310nm, the length to CNT on electrode (50) are 17 μm；The gas sensor module (23) includes silicon chip substrate (11), tungsten oxide nano (32) and Au electrodes (31), on the surface of the silicon chip substrate (11) corrosion have Porous Silicon area (21), the surface evaporation of the Porous Silicon area has composite sensing of the tungsten oxide layer film with porous silicon together as detection gas Material, the aperture of the porous silicon is 10~90nm；The dye sensitization solar cell module (13) and gas sensor mould The specification that block (23) is arranged at surface and has the air admission hole (53) of an a diameter of 0.5cm is the rectangular of 5cm × 5cm × 1cm aluminum In body framework (43), appearance of the dye sensitization solar cell module (13) by adhesive bonding to the framework (43) Face, and make light anode upward, the gas sensor module (23), data read module (33) are arranged in the framework (43) Portion, the dye sensitization solar cell module (13), the gas sensor module (23) and data read module (33) are logical Cross wire connection；The making of the dye sensitization solar cell module (13) comprises the following steps：S1：It is prepared by electrode：1. the stainless steel base (10) that the specification for being 0.3mm from thickness is 5cm × 5cm, is thrown with sand paper Light, it is cleaned by ultrasonic successively by acetone, ethanol, deionized water；It is 2. gold-plated in stainless steel base (10) using magnetron sputtering method Belong to Cr films and Ni films form conductive catalytic layer (20), the thickness of the Cr films is 300nm, and the thickness of the Ni films is 15nm；③ Utilize CVD, CH4For carbon source, Ni is catalyst, grows CNT；S2：The preparation of light anode：1. taking absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make its abundant in 50 DEG C of stirred in water bath Mixing, butyl titanate 9ml is added in mixed solution, 1h is stirred in continuation in a water bath, absolute ethyl alcohol 10ml is then added, in water 1h is stirred in bath, 12h is stood, obtains TiO2Solution, filtered, dried；2. take the TiO of 5g steps 1. middle drying2Particle, 10ml ethanol, the mixing of 2ml acetylacetone,2,4-pentanediones, it is put into mortar and grinds abundant, obtained TiO2Slurry；It is 3. appropriate in taking step 2. TiO2The specification of slurry blade coating after cleaning is in 5cm × 5cm ITO electro-conductive glass substrate (40), by being handled at 110 DEG C 2h, 6h in N719 ethanol solution is then immersed in, produces light anode；S3：Electrolyte quota：0.5M lithium iodides, 0.06M iodine, the tertiary yl pyridines of 0.1M 4- and 0.3M 1- propyl group -3- methylimidazoles Salt compounded of iodine, solvent are volume ratio 1:1 acetonitrile and propylene carbonate mixed liquor；S4：Assembling：Electrode will be covered in light anode, and form 50 μm of cavity between the two, edge is encapsulated using insulator, Electrolyte (30) is injected into cavity, forms dye sensitization solar cell module (13)；The preparation of the gas sensor module (23) comprises the following steps：1. cutting silicon chip substrate (11) size to 2cm × 2cm, it is put into cleaning fluid and is cleaned by ultrasonic 40min, cleaning fluid is volume ratio For 3:1 98% concentrated sulfuric acid and 40% hydrogen peroxide；Take out silicon chip substrate (11) to be rinsed well with deionized water, place into hydrofluoric acid Middle immersion 10min, then it is cleaned by ultrasonic 20min respectively with acetone, ethanol, deionized water successively；2. using electrochemical process corrosion of silicon, corrosive liquid is prepared, corrosive liquid is volume ratio 1:3 40% hydrofluoric acid and deionized water Mixed liquor, corrosion current 45mA/cm2, etching time 1h, size 1.5cm × 1cm is formed on silicon chip substrate (11) surface Porous Silicon area (21)；3. silicon chip substrate (11) is put into magnetic control sputtering device, one layer of tungsten film, thickness is deposited on its Porous Silicon area (21) surface For 200nm, then silicon chip substrate (11) is put into tube furnace, seals and is passed through nitrogen under normal pressure, utilizes 450 DEG C of growths of CVD Tungsten oxide nano；4. the Au electrodes (31) of two round point shapes, the Au electrodes are made on Porous Silicon area (21) using magnetron sputtering method (31) a diameter of 1mm, thickness 100nm；The data read module (33) is sent to the controller being arranged inside the detection means by wireless communication module Module, the controller module communicated by wireless communication module and GPRS module, and will be detected by the detection means Data value is transmitted to detection data basestation；Further, the self energizing sensing element is additionally provided with a gas identification module (70), the gas identification module (70) connected by wire and the data read module (33), the gas identification module (70) mainly by shell body (71) and The gas detection means (72) being detachably connected with shell body (71) are formed, and the gas detection means (72) control film by diffusion Layer (73), instruction support powder (74) and glass tube (75) are formed；The preparation process of the gas detection means (72) is as follows：S1：The processing and activation of carrier：The silica-gel carrier sieved is placed in 600 DEG C of Muffle furnaces and calcines 2h, after cooling, dress Bottle is stand-by, wherein, the specification of silica-gel carrier is 90~100 mesh；S2：Indicate the preparation of carrier：The original liquid of measured amounts is put into a container, pours into a certain amount of activated carrier, side Edged stirs, until it is well mixed, untill supernatant liquor is less, after spontaneously drying in atmosphere, it is fitted into stand-by in closed container；S3：The preparation of glass tube：Select the glass tube that internal diameter is uniform, transparency is good, specification is ID2.0mm × OD4.0mm, interception Into some sections of the glass tube that length is 30mm, with sand paper by both sides feather plucking, then successively with suds, clear water, distilled water by glass Glass pipe cleans up, and dries stand-by；S4：The preparation of diffusion control film：Using polyester film thick 0.5mm as diffusion control film, after polymer PET drying, mould is used Tool strikes out the circular membrane that external diameter is 2.0mm；S5：The assembling of gas identification module：The side of control film adhesive bonding to glass tube will be spread, then weighed certain Amount instruction support powder slowly loads in glass tube to glass tube tight, and opposite side diffusion control film is bonded after smooth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610022315.5A CN105466974B (en) | 2016-01-13 | 2016-01-13 | A kind of high voltage power supply that can realize fast gas identification function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610022315.5A CN105466974B (en) | 2016-01-13 | 2016-01-13 | A kind of high voltage power supply that can realize fast gas identification function |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105466974A CN105466974A (en) | 2016-04-06 |
| CN105466974B true CN105466974B (en) | 2018-01-30 |
Family
ID=55604905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610022315.5A Active CN105466974B (en) | 2016-01-13 | 2016-01-13 | A kind of high voltage power supply that can realize fast gas identification function |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105466974B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1280393A (en) * | 1999-06-30 | 2001-01-17 | 佳能株式会社 | Solar cell module |
| CN1438480A (en) * | 2002-02-10 | 2003-08-27 | 王宝辉 | Portable direct-reading type power-free hydrogen-sulfide gas detector and preparation of indicating matter |
| CN101587781A (en) * | 2009-06-26 | 2009-11-25 | 大连理工大学 | Process for preparing dye-sensitized solar cell by complete spray coating process |
| CN101694819A (en) * | 2009-10-21 | 2010-04-14 | 华东师范大学 | High-power dye-sensitized solar cell |
| CN102831753A (en) * | 2012-08-16 | 2012-12-19 | 上海霖睿自控设备有限公司 | Solar gas detecting and alarming system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8737618B2 (en) * | 2010-02-17 | 2014-05-27 | Telcordia Technologies, Inc. | Secure key distribution for optical code division multiplexed based optical encryption |
-
2016
- 2016-01-13 CN CN201610022315.5A patent/CN105466974B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1280393A (en) * | 1999-06-30 | 2001-01-17 | 佳能株式会社 | Solar cell module |
| CN1438480A (en) * | 2002-02-10 | 2003-08-27 | 王宝辉 | Portable direct-reading type power-free hydrogen-sulfide gas detector and preparation of indicating matter |
| CN101587781A (en) * | 2009-06-26 | 2009-11-25 | 大连理工大学 | Process for preparing dye-sensitized solar cell by complete spray coating process |
| CN101694819A (en) * | 2009-10-21 | 2010-04-14 | 华东师范大学 | High-power dye-sensitized solar cell |
| CN102831753A (en) * | 2012-08-16 | 2012-12-19 | 上海霖睿自控设备有限公司 | Solar gas detecting and alarming system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105466974A (en) | 2016-04-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105529191A (en) | High-conversion-efficiency solar cell based vehicle license plate recognition device of parking lot | |
| TW558842B (en) | Solar cell | |
| CN106525942A (en) | Construction method of photoinduced electric sensor with time as read signal | |
| CN105466973B (en) | A kind of safety barrier with quick detection function | |
| CN105489385A (en) | Electric vehicle charging station based on self-powering detecting function | |
| CN105489386B (en) | A kind of solar cell frame with quick detection gas | |
| CN105466974B (en) | A kind of high voltage power supply that can realize fast gas identification function | |
| CN105679545B (en) | A kind of curtain based on fast gas identification function | |
| CN105673377A (en) | Metering refueling pump based on high-efficiency solar cell | |
| CN105674603B (en) | A kind of solar thermal collector with automatic gas detection function | |
| CN105679537B (en) | A kind of power operation door-plate based on the detection of self energizing gas | |
| CN105486820B (en) | A kind of outdoor video monitoring device with gas detection function | |
| CN105429596B (en) | A kind of product open air presentation device based on high efficiency solar cell | |
| CN105466052B (en) | A kind of solar water heater with high duplication detection function | |
| CN105529190B (en) | A kind of parking lot banister with self energizing gas detection function | |
| CN105551803B (en) | A kind of outdoor gas boiler based on self energizing detection | |
| CN105680250B (en) | A kind of outdoor safety socket with highly sensitive identification function | |
| CN105428077B (en) | A kind of outdoor illumination equipment based on high efficiency solar cell | |
| CN105655137A (en) | Outdoor communication device based on self-powered detection | |
| CN105500608B (en) | A kind of novel injection molding mould with highly sensitive detection function | |
| CN105699436A (en) | Exhaust gas detection device based on solar cell high in conversion rate | |
| CN106195885B (en) | A kind of Solar lamp | |
| CN105674192A (en) | Solar street lamp with high-sensitivity detecting function | |
| CN105513810A (en) | Oil tank with high-repetitiveness detection function of refueling station | |
| CN105527322A (en) | High-sensitivity self-energizing automobile exhaust gas detection device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information |
Inventor after: Li Guangyi Inventor before: Li Haixian |
|
| CB03 | Change of inventor or designer information | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20180102 Address after: 362600 Guang Shan village, Quanzhou, Yongchun County, Fujian Province, No. 182 Applicant after: Li Guangyi Address before: Zhenhai District 315202 Zhejiang city of Ningbo Province Rong Luo Road No. 372 Applicant before: Li Haixian |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191219 Address after: 313000 1-C, building 1, No. 656, Qixing Road, high tech Zone, Wuxing District, Huzhou City, Zhejiang Province Patentee after: Huzhou xinbeilian Network Technology Co., Ltd Address before: 362600 Guang Shan village, Quanzhou, Yongchun County, Fujian Province, No. 182 Patentee before: Li Guangyi |
|
| TR01 | Transfer of patent right |