CN105448774B - A kind of plasma processing device - Google Patents
A kind of plasma processing device Download PDFInfo
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- CN105448774B CN105448774B CN201410438682.4A CN201410438682A CN105448774B CN 105448774 B CN105448774 B CN 105448774B CN 201410438682 A CN201410438682 A CN 201410438682A CN 105448774 B CN105448774 B CN 105448774B
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Abstract
The present invention provides a kind of plasma processing devices, including reaction chamber, driving device and shaft, bogey and pallet are provided in reaction chamber, pallet is for carrying multiple substrates, bogey is for carrying pallet, adsorption electrode is provided in bogey, adsorption electrode is electrically connected to a power source, it is fixed in a manner of making pallet use Electrostatic Absorption with bogey, shaft corresponds to the central area setting of pallet, one end of shaft is fixedly connected with bogey, the other end of shaft is connected with the drive shaft of driving device, it is rotated horizontally by the drive shaft rotation drive shaft of driving device around the spindle central axis, to drive bogey and pallet to rotate horizontally around the tray center axis.The uniformity between the piece of multiple substrates in same ring layer can be improved in the plasma processing device, so as to improve the uniformity of the multiple substrates of single process.
Description
Technical field
The invention belongs to microelectronic processing technique fields, and in particular to a kind of plasma processing device.
Background technique
In technical fields such as IC manufacturing, photovoltaic, semiconductor lightings, plasma processing device is application
One of wide equipment.In practical applications, inductively coupled plasma body process equipment is by under lower operating air pressure
It can be obtained that highdensity plasma, structure are simple, cost is relatively low and can be to the radio frequency source and control for generating plasma
The advantages that radio frequency source of energy of plasma is independently controlled is widely used at present.
Graphical sapphire substrate (Patterned Sapphire Substrate, hereinafter referred to as PSS) be at present more
The technology of the substrate of the raising LED component light extraction efficiency of mainstream generallys use inductively coupled plasma body process equipment to presence
The Sapphire Substrate of mask pattern performs etching, to obtain the Sapphire Substrate of image conversion.Fig. 1 be existing inductive coupling etc. from
The structural schematic diagram of daughter process equipment.Referring to Fig. 1, the inductively coupled plasma body process equipment is for completing above-mentioned PSS
Technique, which includes reaction chamber 10, is provided with air inlet on the bottom wall of reaction chamber 10
Device 11 is provided with induction coil 12 conveying process gas into reaction chamber 10 above the roof of reaction chamber 10,
Induction coil 12 is electrically connected with the first radio-frequency power supply (not shown), in reaction chamber 10 generate alternating magnetic field so that
Process gas excites to form plasma；Bottom is provided with bogey 13 in reaction chamber 10, carries multiple substrate S's
Pallet 14 is placed on the bogey 13, and substrate S opposing tray 14 is fixed and pallet 14 is fixed with respect to bogey 13,
Substrate S is Sapphire Substrate, and bogey 13 is electrically connected with the second radio-frequency power supply (not shown), so that plasma
In charged particle be oriented movement to bogey 13 under the biasing electric field that the second radio-frequency power supply generates, work as plasma
When moving to the surface of substrate S, the skin-material of substrate S is removed by physical bombardment or is produced in chemical reaction and can wave
The gaseous material of hair, but since mask material protects surface regional area, there is not the region of exposure mask that will be etched to
Groove and then the graphic array for forming needs, to complete above-mentioned PSS technique.
However, using above-mentioned inductively coupled plasma body process equipment it is inevitable in practical applications in the presence of state and ask
Topic:
In order to improve the production capacity of single process, multiple substrate S are usually carried on pallet 14, as shown in Fig. 2, pallet 14
On be radially formed with three center, inner layer and outer layer regions, and respectively 1,7 and 14, in practical application
In, it is difficult to guarantee the uniformity (that is, uniformity between piece) of figure pattern between two substrate S in PSS technique, especially inner layer
Or uniformity between the piece in the same ring layer of outer layer, this often will cause etched features and asymmetric or eccentric phenomena be presented, from
And cause processing quality difference and yields low.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, a kind of plasma process is proposed
The uniformity between the piece of multiple substrates in same ring layer can be improved in equipment, so as to improve the multiple substrates of single process
Uniformity, and then processing quality and yields can be improved.
One of in order to solve the above problem, the present invention provides a kind of plasma processing devices, including reaction chamber, in institute
It states and is provided with bogey and pallet in reaction chamber, the pallet is for carrying multiple substrates, and the bogey is for holding
The pallet is carried, adsorption electrode is provided in the bogey, the adsorption electrode is electrically connected to a power source, so that the support
Disk is fixed by the way of Electrostatic Absorption with the bogey, further includes driving device and shaft, described in the shaft is corresponding
The central area of pallet is arranged, and one end of the shaft is fixedly connected with the bogey, the other end of the shaft and institute
The drive shaft for stating driving device is connected, and drives the shaft in the shaft by the drive shaft rotation of the driving device
Mandrel rotates horizontally, to drive the bogey and the pallet to rotate horizontally around the tray center axis.
Wherein, one end of the shaft is fixedly connected through the lower surface of the bogey with the bogey；And
And conductive layer is provided on the periphery wall of the shaft, the conductive layer is electrically connected with the adsorption electrode, in the conductive layer
Outside be fixedly installed the contact electrode being in contact with the conductive layer, the contact electrode and the power electric connection, institute
Power supply is stated to be electrically connected by the contact electrode, the conductive layer with the adsorption electrode.
Wherein, the conductive layer, the adsorption electrode, the contact electrode and the power output end correspond, and
At least two, and at least two conductive layer being provided at circumferentially spaced along the shaft.
Wherein, the adsorption electrode includes first electrode and second electrode, defines the first electrode and second electricity
The voltage for needing to apply on extremely is respectively first voltage and second voltage, the electrical phase of the first voltage and the second voltage
Instead；The conductive layer includes the first conductive layer and the second conductive layer, is electrically connected respectively with the first electrode and second electrode；Institute
Stating contact electrode includes the first contact electrode corresponding with the first conductive layer and the second conductive layer and the second contact electrode；The electricity
Source includes the first output end and second output terminal, and first output end is electrically connected with the first contact electrode, and described second
Output end is electrically connected with the second contact electrode；The output voltage for presetting first output end and second output terminal is week
Phase is equal to the periodic voltage signal of the shaft swing circle, and the output voltage setting of first output end are as follows: works as institute
State shaft the first conductive layer rotate to it is described first contact contact electrode position at when, first output end it is defeated
Voltage is the first voltage out；Contact electrode is contacted when second conductive layer of the shaft is rotated to described first
Position at when, the output voltage of first output end is the second voltage；The output voltage of the second output terminal is set
It is set to: when the first conductive layer of the shaft is rotated to at the position of the second contact contact electrode, described second
The output voltage of output end is the first voltage；It is contacted when second conductive layer of the shaft is rotated to described second
When at the position of contact electrode, the output voltage of the second output terminal is the second voltage.
Wherein, the conductive layer be along the shaft the ring-shaped conductive layer being circumferentially arranged, the adsorption electrode with it is described
Ring-shaped conductive layer electrical connection, is fixedly installed the contact being in contact with the ring-shaped conductive layer on the outside of the ring-shaped conductive layer
Electrode, contact electrode and the power supply are electrically connected, the power supply by the contact electrode, the ring-shaped conductive layer and
The adsorption electrode electrical connection.
Wherein, insulating layer is provided between the conductive layer and the periphery wall of the shaft.
Wherein, insulating layer is provided between the two neighboring conductive layer.
Wherein, one end of the shaft is run through the upper and lower surface of the bogey and is contacted with the pallet, described
It is additionally provided with the first cooling pipe in shaft and along the length direction of the shaft, also, is additionally provided in the pallet the
Two cooling lines, first cooling pipe are connected with second cooling pipe, and cooling medium is from first cooling tube
Road is delivered to second cooling line, is cooled down with realizing to the substrate.
Wherein, magnetic fluid seal is provided at the port of the shaft where the input terminal of first cooling tube.
Wherein, the bogey is from top to bottom disposed with electrostatic chuck, deck and warm table, and the one of the shaft
End is fixedly connected with the electrostatic chuck；Connect alternatively, one end of the shaft and the electrostatic chuck and the deck are fixed
It connects；Alternatively, one end of the shaft is fixedly connected with the electrostatic chuck, the deck and the warm table.
Wherein, filled with silica gel or silica gel between the relative rotation surface that the shaft drives the pallet to rotate horizontally
With the compound of glass fibre.
Wherein, the outside of the reaction chamber is arranged in the driving device, and the other end of the shaft is through described anti-
The chamber wall of chamber and the drive shaft of the driving device is answered to be connected, also, in the chamber of the shaft and the reaction chamber
Magnetic fluid seal is provided at the position that locular wall is connected.
Wherein, the range of speeds of the pallet rotation is at 0~1000 rev/min.
Wherein, the range of speeds of the pallet rotation is at 0~100 rev/min.
The invention has the following advantages:
Plasma processing device provided by the invention, by setting driving device and shaft, also, shaft corresponds to support
The central area of disk is arranged, and one end of shaft is fixedly connected with bogey, the other end of shaft and the drive shaft of driving device
It is connected, is rotated horizontally by the drive shaft rotation drive shaft of driving device around the spindle central axis, drives carrying dress
It sets and is rotated horizontally with pallet around the tray center axis, this to be located in technical process positioned at the substrate of same ring layer identical
Electromagnetic field, biasing electric field, temperature control thermal field and plasma flow field etc., that is, can be located at multiple bases in same ring layer
The technological parameter that piece carries out technique is identical, thus the uniformity between the piece of multiple substrates in same ring layer can be improved, thus
The uniformity of the multiple substrates of single process can be improved, and then processing quality and yields can be improved.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of existing inductively coupled plasma body process equipment；
Fig. 2 is the top view of pallet in Fig. 1；
Fig. 3 is the structural schematic diagram for the plasma processing device that first embodiment of the invention provides；
Fig. 4 is the structural schematic diagram for the plasma processing device that second embodiment of the invention provides；
Fig. 5 is the structural schematic diagram that electrode and shaft are contacted in Fig. 4；
Fig. 6 is the output voltage timing diagram of the first output end of power supply in Fig. 4；
Fig. 7 is the output voltage timing diagram of power supply second output terminal in Fig. 4；And
Fig. 8 is another structural schematic diagram for contacting electrode and shaft.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, come with reference to the accompanying drawing to the present invention
The plasma processing device that embodiment provides is described in detail.
Fig. 3 is the structural schematic diagram for the plasma processing device that first embodiment of the invention provides.Referring to Fig. 3, this
The plasma processing device that embodiment provides includes reaction chamber 20, driving device 21 and shaft 22.Wherein, in reaction chamber
Bogey 201 and pallet 202 are provided in 20, pallet 202 is for carrying multiple substrate S, as shown in figure 3, edge on pallet 202
Its circumferential direction is placed with multiple substrate S, and multiple substrate S is located at same ring layer, so-called same ring layer refer on pallet 202 with support
The identical annular region of distance of 202 center of disk；The substrate of so-called same ring layer, which refers to, to be located at and tray center position
Substrate at same position, in practical applications, substrate S can form the multiple of radially upper distribution on pallet 202
Above-mentioned ring layer, to improve the yield of single process；Bogey 201 is arranged in bogey 201 for carrying pallet 202
There is adsorption electrode (not shown), adsorption electrode is electrically connected with power supply (not shown), so that pallet 202 and bogey
201 are fixed by the way of Electrostatic Absorption, and in the present embodiment, specifically, bogey 201 is from top to bottom disposed with quiet
Electric sucker 2011, deck 2012 and warm table 2013, are provided with above-mentioned adsorption electrode in electrostatic chuck 2011, adsorption electrode
Quantity can for one, two or more, adsorbed by realizing using in a manner of single electrode, bipolar electrode or multi-electrode Electrostatic Absorption
It is fixed；Warm table 2013 by the way of heat transfer for heating substrate；Certainly, in practical applications, bogey 201 also wraps
Include other assemblies.Alternatively, it is also possible to which adsorption electrode is arranged in pallet 202, so that substrate S and pallet 202 are inhaled using electrostatic
Attached mode is fixed, and certainly, in practical applications, substrate S can also be fixed with pallet 202 using other modes, for example, passing through
Substrate S is fixed on pallet 202 by cover board.
The central area setting of the corresponding pallet 202 of shaft 22, one end of shaft 22 are fixedly connected with bogey 201, turn
The other end of axis 22 is connected with the drive shaft of driving device 21, encloses by the drive shaft rotation drive shaft 22 of driving device 21
Central axis around the shaft 22 rotates horizontally, to drive bogey 201 and pallet 202 to surround the central axis water of the pallet 202
Flat rotation.In the present embodiment, due to the main body that shaft 22 is bearing load, shaft 22 is generally made of carbon bearing；It drives
Dynamic device 21 includes stepper motor, and rotor is fixedly installed in shaft 22, and stepper motor is turned by transmission belt
Kinetic energy is sent to shaft 22.
In this embodiment, it is preferred that the range of speeds that pallet 202 rotates is at 0~1000 rev/min；Further preferably
Ground, at 0~100 rev/min, this can preferably be improved in the same ring layer in 202 surface of pallet the range of speeds that pallet 202 rotates
Uniformity between the piece of multiple substrates, so as to preferably improve the uniformity of the multiple substrates of single process.
Specifically, one end of shaft 22 is fixedly connected through the lower surface of bogey 201 with bogey 201, due to
Pallet 202 and bogey 201 are fixed by the way of Electrostatic Absorption, and therefore, shaft, which rotates horizontally, drives 201 He of bogey
Pallet 202 is rotated horizontally around the tray center axis simultaneously.It is readily appreciated that, one end of shaft 22 is under bogey 201
Surface is firmly connected with it, and should ensure that shaft 22 is not interfered or influenced with the other component being arranged in bogey 201, for example,
It should ensure that shaft 22 is not interfered or influenced with the adsorption electrode in electrostatic chuck 2011.
In addition, the outside of reaction chamber 20 is arranged in driving device 21, the other end of shaft 22 is through reaction chamber 20
Chamber wall is connected with the drive shaft of driving device 21, also, in the position that shaft 22 is connected with the chamber wall of reaction chamber 20
The place of setting is provided with magnetic fluid seal (not shown), this can both guarantee the leakproofness of reaction chamber 20, to guarantee anti-
Answer the vacuum degree of chamber 20, it is also ensured that shaft 22 can rotate horizontally.Certainly, in practical applications, other can also be used
Sealing element.
In addition, it is readily appreciated that, in the present embodiment, to realize the pallet for supporting the shaft 22 and being fixedly connected with shaft
Gravity should be provided with support device (not shown), the setting position of support device is specifically arranged according to the actual situation, example
Such as, be arranged at the position that shaft 22 is connected with the chamber wall of reaction chamber 20, or setting in the inside of reaction chamber 20 or
Outside person's reaction chamber 20.
It should be noted that in the present embodiment, one end of shaft 22 is filled through the lower surface of bogey 201 and carrying
201 are set to be fixedly connected.But the present invention is not limited thereto, in practical applications, one end of shaft 22 can also be through carrying
The upper and lower surface of device 201 is fixedly connected with bogey 201；Can certainly shaft 22 one end directly and bogey
201 lower surface is fixedly connected, and drives bogey 201 and pallet 202 around the tray center as long as can be realized shaft 22
Axis rotates horizontally.
Explanation is needed further exist for, includes electrostatic chuck 2011, the deck being from top to bottom arranged in bogey 201
2012 and warm table 2013 in the case where, for realize shaft 22 one end be fixedly connected with bogey 201, can use following
Mode is fixed: being fixedly connected with one end of shaft 22 with electrostatic chuck 2011, shaft 22, which rotates horizontally, can be achieved while driving
Pallet 202 and the electrostatic chuck 2011 rotate horizontally；(2) make one end and both the electrostatic chuck 2011 and deck 2012 of shaft 22
It is fixedly connected, shaft 22, which rotates horizontally, can be achieved while driving pallet 202, electrostatic chuck 2011 and deck 2012 to rotate horizontally；
(3) it is fixedly connected with one end of shaft 22 with electrostatic chuck 2011, deck 2012 and 2013 three of warm table, shaft 22 is horizontal
Rotation can be achieved while driving pallet 202, electrostatic chuck 2011, deck 2012 and warm table 2013 to rotate horizontally.It is readily appreciated that,
In above-mentioned (2), if electrostatic chuck 2011 is fixedly connected with 2012 the two of deck, one end and two of shaft 22 is needed only be such that
Any one in person is fixedly connected；Similarly, in above-mentioned (3), if electrostatic chuck 2011, deck 2012 and warm table 2013
It is fixedly connected, then needs only be such that one end of shaft 22 is fixedly connected with any one in three.
Furthermore it is preferred that the relative rotation surface that shaft 22 drives bogey 201 and pallet 202 to rotate horizontally it
Between the compound filled with silica gel or silica gel and glass fibre.Specifically, in above-mentioned (1), relative rotation surface is electrostatic
2012 upper surface of 2011 lower surface of sucker and deck；In above-mentioned (2), relative rotation surface is 2012 lower surface of deck and heating
2013 upper surface of platform；In above-mentioned (3), relative rotation surface is 2013 lower surface of warm table and surface adjacent thereto (for example, anti-
Answer chamber inner surface or other surfaces).By heat-transfer interfaces such as the compounds of silica gel or silica gel and glass fibre
Material not only can reduce friction between the two, but also will not have an impact to the conduction of electrostatic attraction；Furthermore it is also possible to
Guarantee that the heat transfer between warm table 2013 and substrate S is unaffected.The compound of such as silica gel or silica gel and glass fibre
Equal heat-transfer interfaces material is suitable for the vacuum environment of plasma processing device.
It is further to note that plasma processing device provided in this embodiment is the processing of inductively coupled plasma body
Equipment, specifically, the inductively coupled plasma body process equipment further include induction coil 23 and inlet duct 24, inlet duct 24
It is arranged on the roof of reaction chamber 20, for conveying process gas into reaction chamber 20；The setting of induction coil 23 is being reacted
Above the roof of chamber 20, and it is connected with excitation power supply (not shown), for process gas in provocative reaction chamber 20
Plasma is formed, which is used to complete substrate S the techniques such as etching, deposition.But this
Invention is not limited thereto, in practical applications, plasma processing device further include capacitance coupling plasma process equipment,
Surface wave or Ecr plasma process equipment, for completing the techniques such as etching, deposition to substrate.
In conclusion plasma processing device provided in this embodiment, by setting driving device 21 and shaft 22, and
And the central area setting of the corresponding pallet 202 of shaft 22, one end of shaft 22 are fixedly connected with bogey 201, shaft 22
The other end is connected with the drive shaft of driving device 21, surrounds this turn by the drive shaft rotation drive shaft 22 of driving device 21
22 central axis of axis rotates horizontally, and to drive bogey 201 and pallet 202 to rotate horizontally around 202 central axis of pallet, this makes
It obtains the substrate in technical process positioned at same ring layer and is located at identical electromagnetic field, biasing electric field, temperature control thermal field and plasma
Body flow field etc., that is, the technological parameter that the substrate positioned at same ring layer can be made to carry out technique is identical, thus can be improved and be located at
Uniformity between the piece of the substrate of same ring layer, so as to improve single process substrate uniformity, and then work can be improved
Skill quality and yields.
Fig. 4 is the structural schematic diagram for the plasma processing device that second embodiment of the invention provides.Fig. 5 is to connect in Fig. 4
The structural schematic diagram of touched electrode and shaft.Referring to Figure 4 together and Fig. 5, plasma processing device provided in this embodiment with
Plasma processing device provided by the above embodiment is similar, equally include reaction chamber 20, driving device 21 and shaft 22,
Since the structure and function of reaction chamber 20, driving device 21 and shaft 22 there has been detailed description in the above-described embodiments,
Details are not described herein.
The plasma process that only plasma processing device provided in this embodiment and first embodiment are provided below
The difference of equipment is described in detail.In the present embodiment, substrate and the position positioned at central area are placed on pallet 202
Multiple substrates in two different ring layers, to improve the yield of single process.One end of shaft 22 is quiet with bogey 201
Electric sucker 2011 is fixedly connected, and shaft 22 rotates horizontally while driving pallet 202 and electrostatic chuck 2011 to rotate horizontally, preferably
Ground, filled with such as silica gel or silica gel and glass fibre between 2012 upper surface of 2011 lower surface of electrostatic chuck and deck
The heat-transfer interfaces such as compound material 203.Conductive layer 221 is provided on the periphery wall of shaft 22, conductive layer 221 includes copper sheet,
Preferably, insulating layer 222 is provided between conductive layer 221 and the periphery wall of shaft 22, for preventing adsorption electrode short-circuit, tool
Body, the copper sheet as conductive layer 221 is embedded on the periphery wall of insulating layer 222.
Conductive layer 221 is electrically connected with the adsorption electrode in electrostatic chuck 2011, also, due to shaft 22 and bogey
201 are fixedly connected, therefore, conductive layer 221 and adsorption electrode synchronous rotary during shaft 22 rotates horizontally, that is,
It says, the two will not occur relative displacement and be electrically connected always.But conductive layer 221 is opposite during shaft 22 rotates horizontally
Power supply 25 rotates, and to connect convenient for conductive layer 221 with power supply 25, is fixedly installed and conduction in the outside of conductive layer 221
The contact electrode 26 that layer 221 is in contact, this position for making shaft 22 contact electrode 26 when rotated do not change, Er Qiejie
Touched electrode 26 can contact conducting with rotation to the conductive layer 221 at corresponding position, to realize power supply 25 and absorption electricity
Pole conducting.
In the present embodiment, bogey 201 is fixed using bipolar electrode Electrostatic Absorption mode, that is, in electrostatic chuck 2011
There are two adsorption electrodes for interior setting, in this case, conductive layer 221, adsorption electrode, contact electrode 26 and 25 output end of power supply
(or power supply) corresponds, and is two, also, two being provided at circumferentially spaced along shaft 22 of conductive layer 221, this makes
Conductive layer 221 may be implemented to be connected with the contact contact of electrode 26 during shaft 22 rotates；It is further preferred that adjacent
Two conductive layers 221 between insulating layer is set, prevent adsorption electrode short-circuit with to avoid two conductive layers 221 connection.
Specifically, as shown in figure 4, adsorption electrode includes first electrode 2011a and second electrode 2011b, the first electricity is defined
The voltage for needing to apply on pole 2011a and second electrode 2011b is respectively first voltage Va and second voltage Vb, first voltage Va
It is electrically opposite with second voltage Vb's；Conductive layer 221 includes the first conductive layer 221a and the second conductive layer 221b, and respectively with the
One electrode 2011a and second electrode 2011b electrical connection；Contacting electrode 26 includes and the first conductive layer 221a and the second conductive layer
221b corresponding first contact electrode 26a and the second contact electrode 26b；Power supply 25 includes the first output terminals A, second output terminal B
It is electrically connected with ground terminal C, ground terminal C with deck 2012, the first output terminals A is electrically connected with the first contact electrode 26a, the second output
End B is electrically connected with the second contact electrode 26b.
Since the rotation of shaft 22 can make the first conductive layer 221a and the second conductive layer 221b with shaft swing circle T weeks
Phase is rotated, so that the contact of contact electrode 26a and second of the first conductive layer 221a and first electrode 26b is T with the period
It is T that periodical conducting and the contact of contact electrode 26a and second of the second conductive layer 221b and first electrode 26b, which are carried out, with the period
Periodical conducting is carried out, therefore, to realize the provide to the first electrode 2011a being electrically connected with the first conductive layer 221a first electricity
Va is pressed, and is not occurred to the electrical property of the second electrode 2011b being electrically connected with the second conductive layer 221b second voltage Vb provided
Variation, then needing the output voltage of default first output terminals A and second output terminal B is to be equal to shaft swing circle T in the period
Periodic voltage signal；Also, the output voltage VA of the first output terminals A is arranged are as follows: when the first conductive layer 221a of shaft 22 rotates
When to the position being in contact with the first contact electrode 26a, the output voltage VA of the first output terminals A is first voltage Va；When turn
When second conductive layer 221b of axis 22 is rotated to the position being in contact with the first contact electrode 26a, the output of the first output terminals A
Voltage VA is second voltage Vb；The output voltage VB of second output terminal B is arranged are as follows: when the first conductive layer 221a of shaft 22 rotates
When to the position being in contact with the second contact electrode 26b, the output voltage VB of second output terminal B is first voltage Va；When turn
When second conductive layer 221b of axis 22 is rotated to the position being in contact with the second contact electrode 26b, the output of second output terminal B
Voltage VB is second voltage Vb.
In the present embodiment, as shown in figure 5, the first conductive layer 221a and the second conductive layer 221b are in the circumferential direction of shaft 22
It is spaced and is symmetrical arranged, so that the first conductive layer 221a and the second conductive layer 221b is equal in the circumferential upper arc length of shaft 22, therefore,
In the swing circle that shaft 22 rotates, first voltage is provided to the first electrode 2011a of the first conductive layer 221a connection
The time of Va is equal with to the second electrode 2011b of the second conductive layer 221b connection offer time of second voltage Vb, is respectively provided with
For the half of shaft swing circle T, thus preceding half period of the output voltage VA of the first output terminals A in shaft swing circle T
Interior is first voltage Va (or second voltage Vb), and second half of the cycle is second voltage Vb (or first voltage Va), accordingly, second
The output voltage VB of output end B should be second voltage Vb (or first voltage in the preceding half period of 22 swing circle T of shaft
Va), second half of the cycle is first voltage Va (or second voltage Vb), as shown in Figure 6 and Figure 7.
Preferably, to realize that the Electrostatic Absorption mode using above-mentioned bipolar electrode stablizes fixation, then it should make first electrode
Amount of electrostatic charge on 2011a and second electrode 2011b is equal, in the present embodiment, due to providing first to first electrode 2011a
The time of voltage Va is equal with to the second electrode 2011b offer time of second voltage Vb, and is the one of shaft swing circle T
Half, therefore, in the present embodiment, the numerical value of first voltage Va and second voltage Vb are equal.
It is appreciated that due to being contacted when the rotation of insulating layer 222 between two neighboring conductive layer 221 to contact electrode 26
It when at the position of conducting, contacts electrode 26 and any conductive layer 221 does not turn on, therefore, connect at this time with contact electrode 26
The output end of power supply 25 can both export first voltage Va or export second voltage Vb.In the present embodiment, when two are led
When at the rotation of insulating layer 222 to the position be connected with the contact contact of electrode 26 between electric layer 221, it is connect with contact electrode 26
25 output end of power supply continues to output the corresponding voltage of conductive layer 221, until the rotation of next conductive layer 221 extremely connects with this
The position that touched electrode 26 is connected, so that the first voltage Va and second voltage Vb in the swing circle T that shaft 22 rotates
Exporting the time is T/2.Additionally it should guarantee between two neighboring conductive layer 221 insulating layer 222 rotation to contact
When at the position that electrode 26 is in contact, contact electrode 26 is not contacted simultaneously and is led with the first conductive layer 221a and the second conductive layer 221b
It is logical.
Additionally, it is appreciated that due to the rotation of insulating layer 222 between the two neighboring conductive layer 221 to contact electrode
When at the position of 26 contact conductings, contact electrode 26 and any conductive layer 221 and do not turn on, at this point, power supply not with adsorption electrode
Therefore electrostatic adsorption force is not present in electrical connection between pallet and electrostatic chuck.But since insulating layer 222 is circumferential in shaft 22
On arc length it is shorter, this makes, and the rotation of shaft 22 makes insulating layer 222 and to contact 26 time of contact of electrode shorter, therefore may be implemented
Time between pallet and electrostatic chuck there is no electrostatic adsorption force is shorter, because without to consolidating between pallet and electrostatic chuck
Surely it has an impact.Preferably, arc length of the insulating layer 222 in 22 circumferential direction of shaft accounts for the 2~10% of entire shaft perimeter, that is,
It says, conductive layer 221 is much larger than arc length of the insulating layer 222 in 22 circumferential direction of shaft in the arc length in 22 circumferential direction of shaft.
In the present embodiment, one end of shaft 22 is contacted through the upper and lower surface of bogey 201 with pallet 202, is being turned
It is additionally provided with the first cooling pipe 223 in axis 22 and along the length direction of shaft 22, also, is additionally provided in pallet 202 the
Two cooling line (not shown)s, the first cooling pipe 223 are connected with the second cooling line, and cooling medium is cooling from first
Pipeline 223 is delivered to the second cooling line, is cooled down with realizing to substrate S, to guarantee temperature needed for substrate is in technique
Degree, cooling medium includes helium.
Preferably, magnetic fluid seal (figure is provided at the port of the shaft 22 where the input terminal of the first cooling tube 223
In be not shown), this can not only make the component flexible rotating at the port, but also the sealing of reaction chamber 20 can be improved
Property.Certainly, in practical applications, other sealing elements can also be used
From the foregoing, it will be observed that the present embodiment, compared with above-mentioned first embodiment, the shaft 22 in above-mentioned first embodiment is only used for
The rotation function of the drive shaft of driving device 21 is passed into bogey 201, in other words, shaft 22 is only used for rotation transmitting function
Energy.And in the present embodiment, shaft 22 not only has rotation transfer function, also have the function of following two: first, and realization power supply
25 functions of being connected with adsorption electrode, second, realize the function of conveying cooling medium.Therefore, the present embodiment and above-mentioned first reality
It applies example to compare, does not need that the structure for realizing the first and second functions is in addition separately provided, so as to simplify reaction chamber 20
Structure.
It should be noted that in the present embodiment, the week of the first conductive layer 221a and the second conductive layer 221b in shaft 22
It interval and is symmetrical arranged upwards, in this case, the numerical value that first voltage Va and second voltage Vb is arranged is equal, to guarantee the
The amount of electrostatic charge in amount of electrostatic charge and second electrode 2011b on one electrode 2011a is equal, to guarantee using the quiet of bipolar electrode
Electro Sorb mode, which is stablized, fixes.Certainly, in practical applications, the first conductive layer 221a and the second conductive layer 221b are in shaft 22
Asymmetric it can also be arranged in circumferential direction, for example, the first conductive layer 221a arc length in the circumferential direction of shaft 22 is the second conductive layer
221b is in circumferential 2 times for going up arc length of shaft, in this case, to the first electrode 2011a connecting with the first conductive layer 221a
The time of first voltage Va is provided to provide the time of second voltage Vb to the second electrode 2011b of the second conductive layer 221b connection
2 times, for guarantee first electrode 2011a on amount of electrostatic charge and second electrode 2011b on amount of electrostatic charge it is equal, then should set
The 1/2 of the numerical value that the numerical value for setting first voltage Va is second voltage Vb.
It should also be noted that, in the present embodiment, bogey 201 is fixed using the Electrostatic Absorption mode of bipolar electrode.
But the present invention is not limited thereto, in practical applications, can also be fixed using single electrode Electrostatic Absorption mode, that is, absorption
The quantity of electrode is one, is electrically connected with the positive or negative pole of power supply, for providing it positive voltage or negative voltage.Above-mentioned
In the case of, as shown in figure 8, conductive layer 221 is the ring-shaped conductive layer being circumferentially arranged along shaft 22, adsorption electrode and ring shaped conductive
Layer is connected, and the contact electrode 26 being in contact with ring-shaped conductive layer is fixedly installed on the outside of ring-shaped conductive layer, therefore, absorption
Electrode, ring-shaped conductive layer, contact electrode 26 and the positive or negative pole of power supply are sequentially connected electrically, wherein the quantity of contact electrode 26
It can be one or more, as long as can be realized the positive or negative pole electrical connection of ring-shaped conductive layer and power supply, such as Fig. 8 institute
Show, the quantity for contacting electrode is two and respectively 26a and 26b.
Explanation is needed further exist for, bogey 201 can also be fixed in a manner of multi-electrode Electrostatic Absorption, in such case
Under, the quantity of adsorption electrode is at least two, adsorption electrode, conductive layer 221, contact electrode 26 and 25 output end of power supply (or
Power supply) it corresponds, and be at least two, at least two being provided at circumferentially spaced along shaft 22 of conductive layer 221, power supply 25 is each
The output voltage of output end is the periodic voltage signal for being equal to shaft swing circle T in the period, and the output of each output end is electric
Press set-up mode similar with the set-up mode of output voltage of each output end of power supply in above-mentioned bipolar electrode Electrostatic Absorption mode,
This will not be detailed here.
It is further to note that in the present embodiment, shaft 22 not only has rotation transfer function, also have following two
A function: first, the function that realization power supply 25 is connected with adsorption electrode, second, realize the function of conveying cooling medium.But
The present invention is not limited thereto, and in practical applications, shaft 22 can also only have the while having rotation transfer function
One function, in this case, one end of shaft 22 do not need the upper and lower surface through bogey 201, it is only necessary to through holding
It carries the lower surface for setting 201 and bogey 201 is fixed, and make adsorption electrode in 22 conductive layer 221 of shaft and bogey 201
Connection.Shaft 22 can also have the function of only there is second, in this case, shaft while rotating transfer function
22 one end needs the upper and lower surface through bogey 201, and makes the first cooling pipe 223 and pallet 202 of shaft 22
The second cooling pipe be connected, moreover, one end of shaft 22 can be not only fixedly connected with pallet 202, but also can be with
Bogey 201 is fixedly connected.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (13)
1. a kind of plasma processing device, including reaction chamber are provided with bogey and pallet in the reaction chamber,
The pallet is for carrying multiple substrates, and the bogey is for carrying the pallet, which is characterized in that fills in the carrying
It is provided with adsorption electrode in setting, the adsorption electrode is electrically connected to a power source, so that the pallet is with the bogey using quiet
The mode of Electro Sorb is fixed, and further includes driving device and shaft, the shaft corresponds to the central area setting of the pallet, described
One end of shaft is fixedly connected with the bogey, and the other end of the shaft is connected with the drive shaft of the driving device
It connects, drives the shaft to rotate horizontally around the spindle central axis by the drive shaft rotation of the driving device, to drive
Bogey and the pallet is stated to rotate horizontally around the tray center axis；
One end of the shaft is fixedly connected through the lower surface of the bogey with the bogey；Also, described turn
Conductive layer is provided on the periphery wall of axis, the conductive layer is electrically connected with the adsorption electrode, solid in the outside of the conductive layer
Surely it is provided with the contact electrode being in contact with the conductive layer, the contact electrode and the power electric connection, the power supply is logical
Cross the contact electrode, the conductive layer is electrically connected with the adsorption electrode.
2. plasma processing device according to claim 1, which is characterized in that the conductive layer, the adsorption electrode,
The contact electrode and the power output end correspond, and at least two, and at least two conductive layers are along institute
State being provided at circumferentially spaced for shaft.
3. plasma processing device according to claim 2, which is characterized in that the adsorption electrode includes first electrode
And second electrode, defining the voltage for needing to apply in the first electrode and the second electrode is respectively first voltage and second
The electrical property of voltage, the first voltage and the second voltage is opposite；The conductive layer includes that the first conductive layer and second are conductive
Layer, is electrically connected with the first electrode and second electrode respectively；The contact electrode includes conductive with the first conductive layer and second
The corresponding first contact electrode of layer and the second contact electrode；The power supply includes the first output end and second output terminal, and described the
One output end is electrically connected with the first contact electrode, and the second output terminal is electrically connected with the second contact electrode；It is default
First output end and the output voltage of second output terminal are the periodic voltage letter for being equal to the shaft swing circle period
Number, and
The output voltage setting of first output end are as follows: contacted when the first conductive layer of the shaft is rotated to described first
When at the position of contact electrode, the output voltage of first output end is the first voltage；Described in the shaft
When second conductive layer is rotated to at the position of the first contact contact electrode, the output voltage of first output end is
The second voltage；
The output voltage setting of the second output terminal are as follows: contacted when the first conductive layer of the shaft is rotated to described second
When at the position of contact electrode, the output voltage of the second output terminal is the first voltage；Described in the shaft
When second conductive layer is rotated to at the position of the second contact contact electrode, the output voltage of the second output terminal is
The second voltage.
4. plasma processing device according to claim 1, which is characterized in that the conductive layer is along the shaft
The ring-shaped conductive layer being circumferentially arranged, the adsorption electrode are electrically connected with the ring-shaped conductive layer, in the outer of the ring-shaped conductive layer
Side is fixedly installed the contact electrode being in contact with the ring-shaped conductive layer, and the contact electrode is electrically connected with the power supply,
The power supply is electrically connected by the contact electrode, the ring-shaped conductive layer with the adsorption electrode.
5. plasma processing device according to claim 2 or 4, which is characterized in that in the conductive layer and described turn
Insulating layer is provided between the periphery wall of axis.
6. plasma processing device according to claim 2, which is characterized in that between the two neighboring conductive layer
It is provided with insulating layer.
7. plasma processing device according to claim 1, which is characterized in that held through described one end of the shaft
It carries the upper and lower surface set and is contacted with the pallet, be additionally provided in the shaft and along the length direction of the shaft
One cooling pipe, also, the second cooling line is additionally provided in the pallet, first cooling pipe and described second cold
But pipeline is connected, and cooling medium is delivered to second cooling line from first cooling pipe, to realize to the base
Piece is cooled down.
8. plasma processing device according to claim 7, which is characterized in that the input terminal institute of first cooling tube
The shaft port at be provided with magnetic fluid seal.
9. plasma processing device according to claim 1, which is characterized in that the bogey is from top to bottom successively
It is provided with electrostatic chuck, deck and warm table, one end of the shaft is fixedly connected with the electrostatic chuck；Alternatively, described turn
One end of axis is fixedly connected with the electrostatic chuck and the deck；Alternatively, one end of the shaft and the electrostatic chuck,
The deck and the warm table are fixedly connected with.
10. according to claim 1 or plasma processing device described in 9, which is characterized in that the shaft drives the pallet
Compound between the relative rotation surface of horizontal rotation filled with silica gel or silica gel and glass fibre.
11. plasma processing device according to claim 1, which is characterized in that the driving device is arranged described
The outside of reaction chamber, the other end of the shaft is through the chamber wall of the reaction chamber and the drive shaft of the driving device
It is connected, also, is provided with magnetic fluid seal at the position that the shaft is connected with the chamber wall of the reaction chamber.
12. plasma processing device according to claim 1, which is characterized in that the range of speeds of the pallet rotation
At 0~1000 rev/min.
13. plasma processing device according to claim 12, which is characterized in that the range of speeds of the pallet rotation
At 0~100 rev/min.
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| CN201410438682.4A CN105448774B (en) | 2014-08-29 | 2014-08-29 | A kind of plasma processing device |
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| CN107594293A (en) * | 2017-02-10 | 2018-01-19 | 合肥万宝光电科技有限公司 | A kind of fresh color selector sterilizing and purifying device |
| TWI658489B (en) * | 2017-09-14 | 2019-05-01 | 南韓商吉佳藍科技股份有限公司 | Plasma substrate processing device including a rotatable electrostatic chuck and substrate processing method using the same |
| CN110004424B (en) * | 2018-01-05 | 2020-12-22 | 友威科技股份有限公司 | Continuous coating device |
| CN108711546B (en) * | 2018-04-28 | 2019-07-23 | 武汉华星光电技术有限公司 | Lower electrode and dry etcher |
| CN112117224B (en) * | 2020-09-22 | 2024-02-27 | 北京北方华创微电子装备有限公司 | Bearing device and semiconductor processing equipment |
| CN114141683A (en) * | 2021-11-26 | 2022-03-04 | 北京北方华创微电子装备有限公司 | Electrostatic tray and base |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2718777Y (en) * | 2004-08-10 | 2005-08-17 | 晶研科技股份有限公司 | Improved reactor for downstream plasma |
| CN100552913C (en) * | 2006-11-30 | 2009-10-21 | 佳能安内华股份有限公司 | Power-supply device and the deposition process that utilizes power-supply device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2002270682A (en) * | 2001-03-13 | 2002-09-20 | Toshiba Corp | Electrostatic chuck device, semiconductor processing device, semiconductor manufacturing device, and semiconductor processing method |
| JP2002339064A (en) * | 2001-05-16 | 2002-11-27 | Anelva Corp | Vacuum treatment apparatus |
| JP3688243B2 (en) * | 2002-02-18 | 2005-08-24 | 株式会社日立国際電気 | Semiconductor manufacturing equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2718777Y (en) * | 2004-08-10 | 2005-08-17 | 晶研科技股份有限公司 | Improved reactor for downstream plasma |
| CN100552913C (en) * | 2006-11-30 | 2009-10-21 | 佳能安内华股份有限公司 | Power-supply device and the deposition process that utilizes power-supply device |
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