CN105445978A - TFT array substrate detection method - Google Patents
TFT array substrate detection method Download PDFInfo
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- CN105445978A CN105445978A CN201610056885.6A CN201610056885A CN105445978A CN 105445978 A CN105445978 A CN 105445978A CN 201610056885 A CN201610056885 A CN 201610056885A CN 105445978 A CN105445978 A CN 105445978A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N2021/653—Coherent methods [CARS]
- G01N2021/655—Stimulated Raman
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- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention provides a TFT array substrate detection method. The method comprises the steps that detection is conducted on a TFT array substrate through Raman spectrometer, types, components, crystallization quality and matter content range of all matter on the TFT array substrate are determined according to Raman characteristic peaks, and therefore whether pollutants exist in a detection area of the TFT array substrate or not, the components of the pollutants, the quality of crystal growth and the degree of purity are determined. According to the TFT array substrate detection method, the consumed time is short, the condition is simple, the sensitivity is high, the components and sources of the pollutants on the TFT array substrate can be accurately detected, the quality of the crystal growth is monitored in real time, cleanliness of the TFT array substrate is improved, the film forming quality is improved, and poor processing is reduced.
Description
Technical field
The present invention relates to display technique field, particularly relate to a kind of tft array substrate detection method.
Background technology
Liquid crystal display (LiquidCrystalDisplay, LCD) have that fuselage is thin, power saving, the many merits such as radiationless, be widely used, as: LCD TV, mobile phone, personal digital assistant (PDA), digital camera, computer screen or notebook computer screen etc., occupy an leading position in flat display field.
Liquid crystal display major part on existing market is backlight liquid crystal display, and it comprises display panels and backlight module (backlightmodule).The principle of work of display panels is at thin-film transistor array base-plate (ThinFilmTransistorArraySubstrate, TFTArraySubstrate) with colored filter substrate (ColorFilter, CF) liquid crystal molecule is poured between, and on two plate bases, apply driving voltage to control the sense of rotation of liquid crystal molecule, so that the light refraction of backlight module is out produced picture.
Tft array substrate comprises many gate lines and data line, orthogonal many gate lines and a plurality of data lines define multiple pixel cell, and be provided with thin film transistor (TFT) (ThinFilmTransistor, TFT), pixel electrode and memory capacitance etc. in each pixel cell.TFT comprises a grid and is connected to gate line, and source electrode is connected to data line, and drain electrode is connected to pixel electrode.When gate line is driven, TFT is in conducting state, corresponding data line is sent into gray scale voltage signal and is loaded on pixel electrode, thus make between pixel electrode to public electrode, to produce corresponding electric field, then there is change in orientation in the liquid crystal molecule in liquid crystal layer, therefore can realize different image displays under the effect of electric field.
The manufacturing process of tft array substrate in prior art; generally include: first; one underlay substrate, the light shield layer of making successively, silicon nitride layer, polysilicon layer and silicon oxide layer on described underlay substrate are provided; subsequently passage doping and N-type ion doping formation semiconductor layer are carried out to described polysilicon layer; finally, described semiconductor layer prepares gate insulator, grid, interlayer insulating film, source/drain, flatness layer, public electrode, protective seam and pixel electrode successively.In above-mentioned manufacturing process, particularly in the processing procedure of flatness layer, can produce organic contaminant and impurity at substrate surface, and prior art lacks directly effective detection means usually for this pollutant and impurity, especially more weak in the pollutant monitoring that granule is less with amount.In addition, in each processing procedure section, the growth quality of rete lacks in real time control, and these factors all can have an impact to rear processing procedure, thus reduces the yield producing line.
Raman scattering is the one of light scattering phenomenon, elastic collision and inelastic collision can be there is when the light inlet photon of homogeneous beam and interaction of molecules, in elastic collision process, photon and intermolecularly do not have energy exchange, photon only changes direction of motion and does not change frequency, and this scattering process is called Rayleigh scattering.And in inelastic collision process, energy exchange is there is between photon and molecule, photon not only changes direction of motion, the part energy of photon passes to molecule simultaneously, or vibration and the rotational energy of molecule pass to photon, thus changing the frequency of photon, this scattering process is called Raman scattering.Raman scattering spectrum is analyzed, according to the frequency of Raman, the composition of material, structure, conformation, form can be determined; Change according to Raman peak position can determine tension force, stress; The quality of crystal can be determined according to Raman peak width; Can determine solids content range according to Raman peaks intensity, end reaction goes out the much information of tested substance.
Summary of the invention
The object of the present invention is to provide a kind of tft array substrate detection method, tft array substrate cleanliness factor can be improved, improve quality of forming film, reduce deficient manufacturing procedure.
For achieving the above object, the invention provides a kind of tft array substrate detection method, comprise the steps:
Step 1, provide a tft array substrate, described tft array substrate is provided with detection zone;
Step 2, provide a Raman spectrometer, described Raman spectrometer sends the detection zone that laser irradiates described tft array substrate;
Step 3, provide an analytical equipment, described Raman spectrometer receives the Raman signal of each material in detection zone and passes to analytical equipment, and described analytical equipment analyzes the type of each material in the detection zone of described tft array substrate, composition, crystalline quality and solids content range according to the raman characteristic peak of the Raman signal of each material.
Described Raman spectrometer comprises: light source, Rayleigh filtering apparatus, slit, grating and detector;
Described light source sends laser is irradiated to described tft array substrate detection zone generation Raman scattering generation Raman signal via Rayleigh filtering apparatus, and described Raman signal is detected device again and receives after slit and grating.
In described step 2, the wavelength coverage of laser is 300nm-800nm, and spot diameter is 1 μm.
Store the raman characteristic peak database of various standard of physical on tft array substrate in described analytical equipment, determine the type of material, composition, crystalline quality and solids content range by the corresponding raman characteristic peak of procedure identification.
Store in described analytical equipment that the peak position of the raman characteristic peak of various material on tft array substrate, peak are strong, the allowed band of peak width and side-play amount, the allowed band of, peak width strong by peak position, the peak controlling the raman characteristic peak of each material and side-play amount controls the process yield of tft array substrate.
Described tft array substrate is provided with flatness layer, and described detection zone is positioned on described flatness layer.
Described tft array substrate detection is carried out after the ashing processes of described flatness layer.
Described tft array substrate detection is carried out after the manufacturing process for cleaning of described tft array substrate.
The composition of pollutant and pollutant whether is there is in the detection zone that the type of each material provided by described analytical equipment in described step 3, composition, crystalline quality and solids content range determine described tft array substrate.
Beneficial effect of the present invention: the detection method that the invention provides a kind of tft array substrate, by Raman spectrometer, described tft array substrate is detected, according to the type of each material on raman characteristic peak determination tft array substrate, composition, crystalline quality and solids content range, thus whether there is pollutant in the detection zone determining tft array substrate, the composition of pollutant, the quality of crystal growth and purity level, this detection method is consuming time short, condition is simple, highly sensitive, accurately can detect composition and the source of the pollutant on tft array substrate, the quality of real-time monitoring crystal growth, improve tft array substrate cleanliness factor, improve quality of forming film, reduce deficient manufacturing procedure.
Accompanying drawing explanation
In order to further understand feature of the present invention and technology contents, refer to following detailed description for the present invention and accompanying drawing, but accompanying drawing only provides reference and explanation use, is not used for being limited the present invention.
In accompanying drawing,
Fig. 1 is the schematic diagram of tft array substrate detection method of the present invention;
Fig. 2 is the process flow diagram of tft array substrate detection method of the present invention;
Fig. 3 and Fig. 4 is the testing result figure of tft array substrate detection method of the present invention to the rhodamine 6G on two kinds of various substrates.
Embodiment
For further setting forth the technological means and effect thereof that the present invention takes, be described in detail below in conjunction with the preferred embodiments of the present invention and accompanying drawing thereof.
Refer to Fig. 2, the invention provides a kind of tft array substrate detection method, comprise the steps:
Step 1, provide a tft array substrate 11, described tft array substrate 11 is provided with detection zone 13.
Alternatively, described tft array substrate 11 is provided with flatness layer 12, and described detection zone 13 is positioned on described flatness layer 12.
Step 2, provide a Raman spectrometer, described Raman spectrometer sends the detection zone 13 that laser irradiates described tft array substrate 11.
Particularly, refer to Fig. 1, described Raman spectrometer comprises: light source 21, Rayleigh filtering apparatus 22, slit 23, grating 24 and detector 25.
Particularly, in described step 2, the wavelength coverage of laser is 300-800nm, and concrete numerical value can be selected as required in this wavelength coverage.
Preferably, in described step 2, the spot diameter of laser is 1 μm.
Particularly, first microcell optical system is utilized to determine the position of detection zone 13, then described light source 21 sends laser and via the detection zone 13 that Rayleigh filtering apparatus 22 is irradiated to described tft array substrate 11, Raman scattering occurs and produce Raman signal, and described Raman signal is detected device 25 and receives after slit 23 and grating 24.
Especially, the test environment of above-mentioned Raman spectrometer is atmospheric environment, and without the need to carrying out pre-treatment to tft array substrate, test condition is simple.Under top condition, single-spot testing can control within 15s, tests consuming time shorter, less on production capacity impact.
Step 3, provide an analytical equipment, described Raman spectrometer receives the Raman signal of each material in detection zone 13 and passes to analytical equipment, and described analytical equipment analyzes the type of each material in the detection zone 13 of described tft array substrate 11, composition, crystalline quality and solids content range according to the raman characteristic peak of the Raman signal of each material.
Particularly, described analytical equipment can select computing machine, store the raman characteristic peak database of various standard of physical on tft array substrate in described analytical equipment, determine the type of material, composition, crystalline quality and solids content range by the corresponding raman characteristic peak of procedure identification.Also store in described analytical equipment that the peak position of the raman characteristic peak of various material on tft array substrate, peak are strong, the allowed band of peak width and side-play amount, the allowed band of, peak width strong by peak position, the peak controlling the raman characteristic peak of each material and side-play amount controls the process yield of tft array substrate.
Further, the composition of pollutant and pollutant whether is there is in the detection zone that the type of each material provided by described analytical equipment, composition, crystalline quality and solids content range determine described tft array substrate, and the source of composition determination pollutant according to pollutant, Raman spectrometer is utilized to observe macroscopical clean situation, micron-sized particle can be differentiated, thus the strict number controlling bulky grain pollutant.
Alternatively, carry out described tft array substrate detection after the ashing processes of described flatness layer 12, fundamental purpose is detect the quality of forming film of organic contaminant on flatness layer and impurity content and flatness layer.
Alternatively, after the manufacturing process for cleaning of described tft array substrate, carry out described tft array substrate detection, whether the cleaning performance that fundamental purpose detects the manufacturing process for cleaning of tft array substrate is up to standard.
Particularly, refer to Fig. 3 and Fig. 4, be respectively the testing result utilizing detection method of the present invention to detect the rhodamine 6G (R6G) on two kinds of various substrates, optical maser wavelength is 488nm, characteristic peaks is respectively 1650,1575,1510,1365,1310cm
-1, peak is obvious, clear by force, and the content of the rhodamine 6G detected in Fig. 3 and Fig. 4 is respectively 1.437 × 10
-4g and 9.58 × 10
-11g, the content wherein detected in Fig. 4 is extremely low, to this by surface treatment, forms surface enhanced Raman scattering effect and promotes detectability.
In sum, the invention provides a kind of detection method of tft array substrate, by Raman spectrometer, described tft array substrate is detected, according to the type of each material on raman characteristic peak determination tft array substrate, composition, crystalline quality and solids content range, thus whether there is pollutant in the detection zone determining tft array substrate, the composition of pollutant, the quality of crystal growth and purity level, this detection method is consuming time short, condition is simple, highly sensitive, accurately can detect composition and the source of the pollutant on tft array substrate, the quality of real-time monitoring crystal growth, improve tft array substrate cleanliness factor, improve quality of forming film, reduce deficient manufacturing procedure.
The above, for the person of ordinary skill of the art, can make other various corresponding change and distortion according to technical scheme of the present invention and technical conceive, and all these change and be out of shape the protection domain that all should belong to the claims in the present invention.
Claims (9)
1. a tft array substrate detection method, is characterized in that, comprises the steps:
Step 1, provide a tft array substrate (11), described tft array substrate (11) is provided with detection zone (13);
Step 2, provide a Raman spectrometer, described Raman spectrometer sends the detection zone (13) that laser irradiates described tft array substrate (11);
Step 3, provide an analytical equipment, described Raman spectrometer receives the Raman signal of detection zone (13) each material and passes to analytical equipment, and described analytical equipment analyzes the type of each material in the detection zone (13) of described tft array substrate (11), composition, crystalline quality and solids content range according to the raman characteristic peak of the Raman signal of each material.
2. tft array substrate detection method as claimed in claim 1, it is characterized in that, described Raman spectrometer comprises: light source (21), Rayleigh filtering apparatus (22), slit (23), grating (24) and detector (25);
Described light source (21) sends laser is irradiated to described tft array substrate (11) detection zone (13) generation Raman scattering generation Raman signal via Rayleigh filtering apparatus (22), and described Raman signal is detected device (25) again and receives after slit (23) and grating (24).
3. tft array substrate detection method as claimed in claim 1, it is characterized in that, in described step 2, the wavelength coverage of laser is 300nm-800nm, and spot diameter is 1 μm.
4. tft array substrate detection method as claimed in claim 1, it is characterized in that, the raman characteristic peak database of each standard of physical on tft array substrate is stored, by identifying that corresponding raman characteristic peak determines the type of material, composition, crystalline quality and solids content range in described analytical equipment.
5. tft array substrate detection method as claimed in claim 4, it is characterized in that, also store in described analytical equipment that the peak position of the raman characteristic peak of each material on tft array substrate, peak are strong, the allowed band of peak width and side-play amount, the allowed band of, peak width strong by peak position, the peak controlling the raman characteristic peak of each material and side-play amount controls the process yield of tft array substrate.
6. tft array substrate detection method as claimed in claim 1, it is characterized in that, described tft array substrate (11) is provided with flatness layer (12), and described detection zone (13) are positioned on described flatness layer (12).
7. tft array substrate detection method as claimed in claim 6, is characterized in that, after the ashing processes of described flatness layer (12), carry out described tft array substrate detection.
8. tft array substrate detection method as claimed in claim 1, is characterized in that, after the manufacturing process for cleaning of described tft array substrate, carry out described tft array substrate detection.
9. tft array substrate detection method as claimed in claim 1, it is characterized in that in the detection zone (13) that the type of each material provided by described analytical equipment in described step 3, composition, crystalline quality and solids content range determine described tft array substrate (11), whether there is the composition of pollutant and pollutant.
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| CN201610056885.6A CN105445978A (en) | 2016-01-27 | 2016-01-27 | TFT array substrate detection method |
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| CN201610056885.6A CN105445978A (en) | 2016-01-27 | 2016-01-27 | TFT array substrate detection method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107167463A (en) * | 2017-04-29 | 2017-09-15 | 合肥国轩高科动力能源有限公司 | The qualitative and homogeneity analysis method of gluing diaphragm material in a kind of lithium ion battery |
| CN110637257A (en) * | 2017-04-13 | 2019-12-31 | Ist 梅茨有限公司 | Device for the surface treatment of objects |
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| US20110163448A1 (en) * | 2008-09-04 | 2011-07-07 | Kaneka Corporation | Substrate having a transparent electrode and method for producing the same |
| CN102680449A (en) * | 2011-03-18 | 2012-09-19 | 精工爱普生株式会社 | Substance component detection device |
| CN104020153A (en) * | 2014-06-16 | 2014-09-03 | 中国农业大学 | Raman spectrum detection system and method |
| CN105223184A (en) * | 2015-10-23 | 2016-01-06 | 上海卫华科学仪器有限公司 | Qualitative and the measured portions detection method of material based on Raman spectrometer |
-
2016
- 2016-01-27 CN CN201610056885.6A patent/CN105445978A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110163448A1 (en) * | 2008-09-04 | 2011-07-07 | Kaneka Corporation | Substrate having a transparent electrode and method for producing the same |
| CN102680449A (en) * | 2011-03-18 | 2012-09-19 | 精工爱普生株式会社 | Substance component detection device |
| CN104020153A (en) * | 2014-06-16 | 2014-09-03 | 中国农业大学 | Raman spectrum detection system and method |
| CN105223184A (en) * | 2015-10-23 | 2016-01-06 | 上海卫华科学仪器有限公司 | Qualitative and the measured portions detection method of material based on Raman spectrometer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110637257A (en) * | 2017-04-13 | 2019-12-31 | Ist 梅茨有限公司 | Device for the surface treatment of objects |
| CN107167463A (en) * | 2017-04-29 | 2017-09-15 | 合肥国轩高科动力能源有限公司 | The qualitative and homogeneity analysis method of gluing diaphragm material in a kind of lithium ion battery |
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