CN105437076A - Real-time control method and system for wafer contour - Google Patents
Real-time control method and system for wafer contour Download PDFInfo
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- CN105437076A CN105437076A CN201410427863.7A CN201410427863A CN105437076A CN 105437076 A CN105437076 A CN 105437076A CN 201410427863 A CN201410427863 A CN 201410427863A CN 105437076 A CN105437076 A CN 105437076A
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Abstract
The invention discloses a real-time control method and system for a wafer contour, and specifically discloses a real-time wafer contour control system used for chemical and mechanical grinding. The system comprises a sensor, an automatic system, a controller and a grinding device, wherein the sensor is used for obtaining real-time process information of the chemical and mechanical grinding process; the automatic system is in communication coupling with the sensor and used for obtaining compensation data relevant to the wafer contour through analysis and calculation based on the information obtained by the sensor, and the automatic system is also used for feeding back the data obtained through calculation to the controller; the controller is used for adjusting relevant process parameters in real time according to the feedback data from the automatic system; the grinding device is controlled by the controller to carry out chemical and mechanical grinding according to the adjusted parameters, so that the wafer contour is controlled in real time. In addition, the invention discloses the real-time wafer contour control method used for chemical and mechanical grinding.
Description
Technical field
Relate generally to IC manufacturing field of the present invention, particularly relates to the wafer profile real-time control method for cmp and system thereof.
Background technology
Along with the develop rapidly of super large-scale integration (ULSI, UltraLargeScaleIntegration), integrated circuit fabrication process becomes and becomes increasingly complex with meticulous, also more and more stricter to the flatness requirement of wafer surface.And the polylaminate wiring technique of extensive use now can cause wafer surface uneven, extremely unfavorable to graphic making.For this reason, need to carry out planarized (Planarization) process to wafer, make every one deck all have higher overall flatness.
Although there are many planarization to be all once applied, as anti-carved method, glass circumfluence method and spin coating rete etc., these conventional arts all belong to local planarization technology, can not accomplish global planarizartion.At present, chemical mechanical milling method (CMP, ChemicalMechanicalPolishing) be the best approach reaching global planarizartion, especially, after semiconductor fabrication process enters sub-micron (sub-micron) field, cmp has become an indispensable Manufacturing Techniques.
Specifically please refer to Fig. 1, it is the schematic diagram of existing work-table of chemicomechanical grinding mill, as shown in Figure 1, work-table of chemicomechanical grinding mill comprises: grinding pad 10, grinding plate 20, wafer 30 and grinding head, described grinding head comprises retaining ring (retentionring) 41 and the rete 42 between retaining ring 41, described grinding pad 10 is attached at the surface of grinding plate 20, described retaining ring 41 is centered around around wafer 30, damage to avoid wafer 30 to skid off described grinding head when grinding, and effective abrasive areas of wafer 30 can be expanded, described rete 40 is for adsorbing wafer 30.
When carrying out chemical mechanical milling tech, can the grinding head inhaling attached wafer 30 be moved to above grinding plate 20, wafer 30 is pressed on grinding plate 20 simultaneously, the to be ground of this wafer 30 faces down and contacts the grinding pad 10 relatively rotated, when rotating under the drive of grinding plate 20 at motor, described grinding head also carries out relative motion, is transported on grinding pad 10 by lapping liquid 50 simultaneously, and by centrifugal force, described lapping liquid 50 is evenly distributed on grinding pad 10.The lapping liquid 50 that described chemical mechanical milling tech uses includes chemical mordant and abrasive grains, softer easy to be removed material is generated by the chemical reaction on chemical mordant and described surface to be ground, then by mechanical friction, these softer materials are removed from the surface of polished wafer, thus reach the effect of global planarizartion.
For submicrometer processing, wafer profile controls to become more and more important, but wafer profile change very greatly in chemical mechanical planarization process, but also is subject to the impact of the factor of such as retaining ring service time and so on.In the prior art, owing to normally just pre-setting profile baseline during technique is arranged, this fixing programming cannot cover the change caused by the factors such as lapping liquid, grinding pad service time, dish service time, therefore cannot make Real-time Feedback to correct in chemical mechanical planarization process for grinding profile, thus cannot realize controlling in real time the wafer profile in chemical mechanical planarization process.
Especially, find in actual production, in chemical mechanical planarization process, larger fluctuation can be there is in the grinding rate of wafer 30 marginal position due to various factors, such as, because retaining ring 41 contacts with grinding pad 10 in process of lapping, therefore retaining ring 41 can affect the grinding rate (also referred to as edge polishing rates) of the marginal position of wafer 30.Use the initial stage in retaining ring 41, when namely described retaining ring 41 is worn and torn less, the edge polishing rates of wafer 30 is lower; And after retaining ring 41 uses the long period, due to retaining ring 41 thinning gradually by continuous attrition time, the corresponding pressure to grinding pad 10 and the deformation caused also can change, the edge polishing rates of wafer 30 then can be caused obviously to rise, but can not significant change be there is in the grinding rate (also referred to as center grinding rate) of the center of wafer 30.
But existing work-table of chemicomechanical grinding mill normally performs cmp operation according to the technological parameter that to enroll controller in advance.That is, existing cmp operation all adopts identical technological parameter in the different operational phases of retaining ring, therefore cannot adjust the impact that the prolongation due to the service time of retaining ring brings to cmp operation.Especially, the initial stage is used in retaining ring, namely when edge polishing rates is lower, may residue be there is in the marginal position of wafer, and after retaining ring uses the long period, namely when edge polishing rates is higher, then may there is grinding phenomenon in the marginal position of wafer, Waffer edge profile in chemical mechanical planarization process is altered a great deal, thus causes chemical mechanical milling tech deficient in stability.
For this problem, the solution proposed at present adopts frequently to adjust the mode of retaining ring pressure and wafer edge region band pressure to maintain Waffer edge profile by engineering staff.But, this artificial adjustment mode still cannot make immediate feedback to adjust in real time in chemical mechanical planarization process for Waffer edge profile, therefore still cannot realize the real-time control of Waffer edge profile, thus also just cannot improve product yield further.
In addition, owing to comparing with aluminium, copper-connection has many advantages, is increasingly used as the interconnection structure of Advanced Integrated Circuits at present.Relating in the process manufacturing integrated circuit copper interconnecting utilizes cmp to make layers of copper planarized.Such as, inlay in the process of (dualdamascene) manufacture technics integrated circuit copper interconnecting at employing dual damascene, can comprise following step: be formed at by dielectric layer on substrate, dielectric layer can comprise the materials such as silica; Utilize lithographic technique as dry etching, form conductor trench in the dielectric layer; The dielectric layer being formed with conductor trench deposits the thin layer be made up of materials such as Ta/TaN, using as barrier layer; Utilize the technology such as such as chemical vapour deposition (CVD) (CVD), physical vapour deposition (PVD) (PVD) or plating (ECP), form layers of copper over the barrier layer, copper is filled in conductor trench; Make layers of copper planarized with cmp again, remove copper unnecessary on dielectric layer, allow wafer surface reach comprehensive planarized, in order to carrying out of subsequent thin film deposition.Particularly, as shown in Figure 2, chemomechanical copper grinding (CuCMP) process generally includes following three steps: at grinding plate 1 place, removes the most copper of wafer surface; At grinding plate 2 place, carry out fine gtinding to remove copper completely; At grinding plate 3 place, remove barrier layer.
For chemomechanical copper grinding, it is crucial that wafer profile controls, and the profile after grinding plate 2 is for final particularly crucial across wafer thickness profile.But, due to the current method not used for carrying out real-time thickness measurement on grinding plate 2, therefore cannot the profile after grinding plate 2 be controlled in real time.For the cmp in the Damascus technics of Cu, identical milling time is all adopted for different wafers, and due to the change of grinding rate, on different chips, the thickness of remaining Cu can there are differences, this will cause the sheet resistance of Cu between different chips different, and then has influence on product stability and yield.
In view of above problem, need a kind of method and system that can carry out wafer profile and control in real time in chemical mechanical planarization process.
Summary of the invention
For the above-mentioned problems in the prior art, the invention provides the method and system being intended to can to carry out in chemical mechanical planarization process wafer profile and controlling in real time.
According to an aspect of the present invention, a kind of wafer profile real-time control method for cmp is provided.The method comprises: obtain the real time process information in chemical mechanical planarization process; Carry out analytical calculation based on obtained information and obtain the offset data relevant to wafer profile; By the data feedback that calculates to controller; Relevant process parameters is adjusted in real time according to feedback data by controller; And carry out cmp, to realize the real-time control of wafer profile according to the parameter after adjustment.
Correspondingly, the present invention also provides a kind of wafer profile real-time control system for cmp.This system comprises: sensor, and it obtains the real time process information in chemical mechanical planarization process; Automated system, itself and sensor communicative couplings, the information for obtaining based on sensor is carried out analytical calculation and is obtained the offset data relevant to wafer profile and by the data feedback that calculates to controller; Controller, it adjusts relevant process parameters in real time according to the feedback data from automated system; And lapping device, it carries out cmp, to realize the real-time control of wafer profile according to the parameter after adjustment under the control of the controller.
According to another aspect of the present invention, a kind of Waffer edge profile real-time control method for cmp is provided.The method comprises: collect retaining ring information service time by sensor; Based on wafer edge region band pressure and the retaining ring pressure of the automatic calculation compensation of collected information; By the data feedback that calculates to controller; Wafer edge region band pressure and retaining ring pressure is adjusted in real time according to feedback data by controller; And carry out cmp, to realize the real-time control of Waffer edge profile according to the wafer edge region band pressure after adjustment and retaining ring pressure.
Correspondingly, the present invention also provides a kind of Waffer edge profile real-time control system for cmp, comprising: sensor, and it collects retaining ring information service time; Automated system, itself and sensor communicative couplings, for based on the wafer edge region band pressure of the automatic calculation compensation of the information collected by sensor and retaining ring pressure and by the data feedback that calculates to controller; Controller, it adjusts wafer edge region band pressure and retaining ring pressure in real time according to the feedback data from automated system; And lapping device, it carries out cmp, to realize the real-time control of Waffer edge profile according to the wafer edge region band pressure after adjustment and retaining ring pressure under the control of the controller.
According to a further aspect of the invention, a kind of wafer thickness profile real-time control method for chemomechanical copper grinding is provided.The method comprises: wafer is divided into multiple zone, detects surface reflectivity respectively in each zone, to obtain real-time wafer surface reflectivity rate data; Analyze surface reflectivity difference between each zone to obtain real time profile information; Based on the zone pressure distribution of the automatic calculation compensation of real time profile information; By the data feedback that calculates to controller; Zone pressure distribution is adjusted in real time according to feedback data by controller; And carry out cmp, to realize the real-time control of wafer thickness profile according to the zone pressure distribution after adjustment.
Correspondingly, the present invention also provides a kind of wafer thickness profile real-time control system for chemomechanical copper grinding, comprising: sensor, and it detects surface reflectivity respectively to obtain real-time wafer surface reflectivity rate data in multiple zone of wafer; Automated system, itself and sensor communicative couplings, data for obtaining based on sensor analyze surface reflectivity difference between each zone to obtain real time profile information, based on the zone pressure distribution of the automatic calculation compensation of real time profile information, and by the data feedback that calculates to controller; Controller, it adjusts zone pressure distribution in real time according to the feedback data from automated system; And lapping device, it carries out cmp, to realize the real-time control of wafer thickness profile according to the zone pressure distribution after adjustment.
Compared with prior art, the present invention makes Real-time Feedback to wafer profile and immediately adjusts in chemical mechanical planarization process, thus achieves the real-time control to wafer profile.By controlling in real time wafer profile in chemical mechanical planarization process, maintain wafer profile, and then improve the stability of chemical mechanical milling tech and improve product yield.
Accompanying drawing explanation
Read the following detailed description in conjunction with the drawings the present invention may be better understood disclosed exemplary embodiment, in the accompanying drawings:
Fig. 1 shows the schematic diagram of the work-table of chemicomechanical grinding mill of prior art;
Fig. 2 shows the schematic diagram of the chemomechanical copper grinding board of prior art;
Fig. 3 shows the relation curve between Waffer edge thickness and retaining ring service time;
Fig. 4 shows the block diagram of wafer profile real-time control method according to an embodiment of the invention;
Fig. 5 shows the block diagram of wafer profile real-time control system according to an embodiment of the invention;
Fig. 6 shows according to an embodiment of the invention for the schematic diagram of the Waffer edge profile real-time control system of cmp; And
Fig. 7 shows according to an embodiment of the invention for the schematic diagram of the wafer thickness profile real-time control system of chemomechanical copper grinding.
In order to interest of clarity, accompanying drawing illustrates general make, and omits description and the details of well-known characteristic and technology, to avoid unnecessarily obscuring the discussion to embodiment of the present invention.In addition, each key element in accompanying drawing is not necessarily drawn in proportion.For example, in accompanying drawing, the size of some key elements may be exaggerated relative to other key element and help the understanding of improvement to various embodiments of the present invention.Same reference numerals in different accompanying drawing represents identical element, and like reference numerals may but not necessarily representation class like key element.
Detailed description of the invention
Referring to accompanying drawing, the present invention is described in detail.Should be appreciated that detailed description is below only exemplary in essence, and be not intended to restriction subject matter or the embodiment of application and the purposes of these embodiments.As used herein, wording " exemplary " expression " as example, example or explanation ".Be described to exemplary any realization should not be construed as preferably certain herein or be better than other realizations.Further, not to be intended to by any expression of representing in aforementioned technical field, background technology, summary of the invention or following detailed description or implicit theory retrain.
Term " first " in the specification and in the claims, " second ", " the 3rd ", " the 4th " etc. (if any) for distinguishing between similar key element, and may not be for describing certain order or time sequencing.Be appreciated that these terms so used in the appropriate case are interchangeable, such as, make the embodiment of the present invention as herein described can operate to be different from other described herein or shown order.Similarly, if method as herein described comprises series of steps, the order of these steps then presented herein is non-essential is the unique order that can perform these steps, and other step that some steps stated can be omitted and/or some do not describe herein can be added to the method.In addition, term " comprises ", " comprising ", " having " and any distortion thereof are intended to be suitable for and not exclusively comprise, make to comprise the process of a series of key element, method, goods or device and be not necessarily limited to those key elements, but other key element that clearly do not list or that these processes, method, goods or device are intrinsic can be comprised.
In order to make Real-time Feedback immediately to correct in chemical mechanical planarization process for grinding profile, the invention provides for cmp wafer profile real-time control method and use the system of the method.
As shown in Figure 4, it illustrates the block diagram of wafer profile real-time control method 400 according to an embodiment of the invention.First, in step S410, obtain the real time process information in chemical mechanical planarization process.In one example, real time process information can comprise, but be not limited to, retaining ring information service time, wafer surface reflectivity rate and/or wafer surface reflectivity luminous intensity, Waffer edge grinding rate, center wafer grinding rate, grinding head rotating speed, grinding pad rotating speed and various operating pressure etc.In step S420, carry out analytical calculation based on obtained information and obtain the offset data relevant to wafer profile.In one example, offset data can comprise, such as, and wafer edge region band pressure compensation data, retaining ring pressure compensation data and wafer region band pressure distributed compensation data etc.In step S430, by the data feedback that calculates to controller, and in step S440, adjust relevant process parameters by controller in real time according to feedback data.In one example, procedure parameter can be associated with said process information and/or offset data.Such as, procedure parameter can comprise wafer edge region band pressure, retaining ring pressure, wafer region band pressure distribution etc.Then, in step S450, carry out cmp, to realize the real-time control of wafer profile according to the parameter after adjustment.
In one embodiment of the invention, the above-mentioned steps S410-S450 of method 400 can be repeated, thus continue to carry out the Real-time Feedback of wafer profile and instant adjustment in chemical mechanical planarization process, realize the real-time control to wafer profile.Note, the application provide on address the following method that will discuss concrete steps be only given as examples for purposes of illustration, be not intended to limit the invention.And one of ordinary skill in this art will readily understand that can a certain or some concrete steps of additions and deletions or adjust the order of these steps as required, simultaneously and without prejudice to the spirit and scope of the present invention.
As shown in Figure 5, it illustrates the block diagram of wafer profile real-time control system 500 according to an embodiment of the invention.In one example, system 500 can comprise: sensor, automated system, controller and lapping device.Sensor can be used for obtaining the real time process information in chemical mechanical planarization process.In example of the present invention, can for the various process information that will obtain to select different sensors.Automated system can be coupled on communicating with sensor.In specific operation process, automated system can receive the information obtained by sensor from sensor, carries out analytical calculation based on this information, obtains the offset data relevant to wafer profile, and by the data feedback that calculates to controller.Controller after receiving the feedback data from automated system, can adjust relevant process parameters according to these feedback data in real time.Like this, under the control of the controller, lapping device can carry out cmp according to the parameter after adjustment, thus realizes the real-time control of wafer profile.Same it should be noted that the application provide on address the following device that will discuss concrete parts be only given as examples for purposes of illustration, be not intended to limit the invention.And one of ordinary skill in this art will readily understand that can a certain or some concrete parts of additions and deletions or modify to these concrete parts or replace as required, simultaneously and without prejudice to the spirit and scope of the present invention.
For sub-65 nanometer technologies, especially in raising yield aspects, Waffer edge profile controls more and more to seem important.But be subject to the impact of the factors such as retaining ring service time due to Waffer edge thickness, and Waffer edge profile is changed very greatly, cause the stability being difficult to maintenance Waffer edge profile.Find to there is intrinsic contacting between Waffer edge thickness and retaining ring service time through experiment.As shown in Figure 3, it illustrates the relation curve between Waffer edge thickness and retaining ring service time.As can be seen from Figure 3, along with the growth of retaining ring service time, Waffer edge lower thickness.In other words, Waffer edge thickness has with trend thinning gradually retaining ring service time.This phenomenon shows, in chemical mechanical planarization process, Waffer edge profile alters a great deal, chemical mechanical milling tech deficient in stability.Therefore, be necessary to reduce the change of Waffer edge profile with retaining ring service time, thus maintain Waffer edge profile.
In view of this, the invention provides the auto-compensation retaining ring pressure of optimization and wafer edge region band pressure to maintain the method for Waffer edge profile stability and to use the system of the method.According to one embodiment of present invention, provide a kind of Waffer edge profile real-time control method for cmp, it comprises the following steps: collect retaining ring information service time by sensor; Based on wafer edge region band pressure and the retaining ring pressure of the automatic calculation compensation of collected information; By the data feedback that calculates to controller; Wafer edge region band pressure and retaining ring pressure is adjusted in real time according to feedback data by controller; And carry out cmp, to realize the real-time control of Waffer edge profile according to the wafer edge region band pressure after adjustment and retaining ring pressure.In one example, the above-mentioned steps of method can be repeated, thus in chemical mechanical planarization process, continue Real-time Feedback and the adjustment of carrying out Waffer edge profile.In other words, in chemical mechanical planarization process, retaining ring information service time can be collected constantly, and constantly adjust wafer edge region band pressure and retaining ring pressure accordingly, to realize the real-time control of Waffer edge profile.
In one example, the method may further include and controls to minimize with the change of retaining ring service time to make Waffer edge profile retaining ring service time.
In one example, above-mentioned controller can comprise grinding head pressure controller.
In one example, the method may further include and wafer is divided into multiple zone, and controls institute's applied pressure in each zone of wafer independently.Such as, wafer can be divided into four or five zone, and the pressure in these zone is controlled independently.In other words, different pressure can be applied respectively in these zone of wafer.
Fig. 6 shows according to an embodiment of the invention for the schematic diagram of the Waffer edge profile real-time control system of cmp.This system can comprise sensor, automated system, controller and lapping device.Sensor (not shown in Fig. 6) can collect retaining ring information service time in chemical mechanical planarization process.In one example, sensor can obtain the sheet number information of the wafer that retaining ring experiences.Automated system (not shown in Fig. 6) can be coupled on communicating with sensor, it receives retaining ring information service time from sensor, based on wafer edge region band pressure and the retaining ring pressure of the automatic calculation compensation of this information, and by the data feedback that calculates to controller.Controller is the maincenter assembly of system, and it is after receiving the feedback data from automated system, in real time adjustment wafer edge region band pressure and retaining ring pressure.In one example, controller can comprise grinding head pressure controller.Lapping device is controlled by controller, and it performs cmp, to realize the real-time control of Waffer edge profile according to the wafer edge region band pressure after adjustment and retaining ring pressure.
In one example, wafer can be divided into multiple zone, and applied pressure is independently controlled in each zone of wafer.Such as, wafer can be divided into four or five zone, and the pressure in these zone is controlled independently.
In one example, this real-time control system can comprise Advanced process control APC system.APC system is process control real-time online, and it, by Real-time Obtaining device parameter information and relevant test result, carries out corresponding dynamic conditioning to obtain high-quality product.
In addition, in other example, can suitably revise and modification the concrete structure of this real-time control system as required.Such as, can, by sensor and/or Automatic System Inteqration in controller, controller be made to have the corresponding function of these assemblies.
The Waffer edge profile real-time control method for cmp of the application of the invention and system, significantly can reduce the change of Waffer edge grinding rate, improves product yield, but also can extend retaining ring service time, thus reduce costs.
On the other hand, in chemomechanical copper grinding technique, in order to control in real time the wafer thickness profile after wafer profile especially grinding plate 2, the invention provides the real time profile Detection & Controling method of optimization and using the system of the method.
Particularly, according to one embodiment of present invention, the invention provides a kind of wafer thickness profile real-time control method for chemomechanical copper grinding.In the method, wafer can be divided into multiple zone, in each zone, detect surface reflectivity respectively, to obtain real-time wafer surface reflectivity rate data.In one example, wafer can be divided into four or five zone.After obtaining wafer surface reflectivity rate data, the wafer surface reflectivity rate difference on wafer between each zone can be analyzed.Because wafer surface reflectivity rate can indicate the removal amount on barrier layer, therefore by analyzing the surface reflectivity difference between zone and zone, the real time profile information of wafer can be obtained.Can the zone pressure distribution of calculation compensation automatically based on this real time profile information, then by the data feedback that calculates to controller, to adjust zone pressure distribution by controller in real time according to feedback data.In one example, the step adjusting zone pressure distribution can comprise the pressure adjusted independently in each zone of wafer.So, just cmp can be carried out, to realize the real-time control of wafer thickness profile according to the zone pressure distribution after adjustment.In one example, above-mentioned measuring and adjustation process can be repeated, thus in chemomechanical copper grinding process, continue Real-time Feedback and the adjustment of carrying out wafer thickness profile.
It is emphasized that, in the present invention, wafer is divided into multiple zone, each zone regulates pressure independently of one another, and is not integrally carry out wafer to regulate uniformly pressure (being such as applied on whole wafer by pressure uniform).Experiment proves, adopts this partitioned mode of the present invention to carry out real-time measuring and adjustation, can obtain profile information more accurately and also realize real time profile controlling functions more accurately.
Fig. 7 shows according to an embodiment of the invention for the schematic diagram of the wafer thickness profile real-time control system of chemomechanical copper grinding.This real-time control system can comprise sensor, automated system, controller and lapping device.Sensor (not shown in Fig. 7) can detect surface reflectivity respectively to obtain real-time wafer surface reflectivity rate data in multiple zone of wafer.In an example of the present invention, sensor can comprise current endpoint system, detects wafer surface reflectivity rate in real time by endpoint system.In one example, wafer can comprise four or five zone.Such as, wafer shown in Figure 7 is at least divided into Z1, Z2, Z3 and Z4 tetra-zone.In addition, also show some technological parameters (such as, reflectivity) the over time curve of each zone in chemomechanical copper grinding process in Fig. 7.Automated system (not shown in Fig. 7) can be coupled on communicating with sensor, it receives the wafer surface reflectivity rate data obtained by sensor from sensor, based on the surface reflectivity difference between each zone of these data analyses to obtain real time profile information, based on the zone pressure distribution of the automatic calculation compensation of this real time profile information, and by the data feedback that calculates to controller.Controller, after receiving the feedback data from automated system, adjusts zone pressure distribution in real time.In one example, in multiple zone of wafer, applied pressure is independently controlled and regulates, and the pressure in each zone can be the same or different.Lapping device under the control of the controller, carries out cmp, to realize the real-time control of wafer thickness profile according to the zone pressure distribution after adjustment.
In other example, similarly, can suitably revise and modification the concrete structure of this real-time control system as required.Such as, can, by sensor and/or Automatic System Inteqration in controller, controller be made to have the corresponding function of these assemblies.
Thus, wafer profile real-time control system of the present invention utilizes the above real time profile detection method provided, the process datas such as real time profile information are fed back to system controller, by system controller dynamic conditioning related process parameters, thus realizes real time profile controlling functions.By controlling in real time wafer profile in chemical mechanical planarization process, wafer profile stability can be maintained, and then improve the stability of chemical mechanical milling tech and improve product yield.
Detailed description is given herein with reference to concrete exemplary embodiment.But, obviously can make various amendment and change to these embodiments, and the more broader spirit of the present invention do not deviated from as described in the appended claims and scope.Although illustrate and describe specific embodiments of the invention, those skilled in the art obviously can make a lot of change, change and amendment and not deviate from the scope of claims.Therefore, description and accompanying drawing should be considered to illustrative but not restrictive, sense.And the above-mentioned use of embodiment and other exemplary language not necessarily refers to same embodiment or same example, and may refer to different and unique embodiment, be also likely same embodiment.Claims change comprising all these dropping in the true scope and spirit of the invention within the scope of it, change and amendment.
Claims (16)
1., for a wafer profile real-time control method for cmp, comprising:
Obtain the real time process information in chemical mechanical planarization process;
Carry out analytical calculation based on obtained information and obtain the offset data relevant to wafer profile;
By the data feedback that calculates to controller;
Relevant process parameters is adjusted in real time according to feedback data by controller; And
Cmp is carried out, to realize the real-time control of wafer profile according to the parameter after adjustment.
2., for a wafer profile real-time control system for cmp, comprising:
Sensor, it obtains the real time process information in chemical mechanical planarization process;
Automated system, itself and sensor communicative couplings, the information for obtaining based on sensor is carried out analytical calculation and is obtained the offset data relevant to wafer profile and by the data feedback that calculates to controller;
Controller, it adjusts relevant process parameters in real time according to the feedback data from automated system; And
Lapping device, it carries out cmp, to realize the real-time control of wafer profile according to the parameter after adjustment under the control of the controller.
3., for a Waffer edge profile real-time control method for cmp, comprising:
Retaining ring information service time is collected by sensor;
Based on wafer edge region band pressure and the retaining ring pressure of the automatic calculation compensation of collected information;
By the data feedback that calculates to controller;
Wafer edge region band pressure and retaining ring pressure is adjusted in real time according to feedback data by controller; And
Cmp is carried out, to realize the real-time control of Waffer edge profile according to the wafer edge region band pressure after adjustment and retaining ring pressure.
4. method according to claim 3, is characterized in that, comprises further and controls to minimize with the change of retaining ring service time to make Waffer edge profile retaining ring service time.
5. method according to claim 3, is characterized in that, described controller comprises grinding head pressure controller.
6. method according to claim 3, is characterized in that, comprises further and wafer is divided into multiple zone and independently controls applied pressure in each zone.
7., for a Waffer edge profile real-time control system for cmp, comprising:
Sensor, it collects retaining ring information service time;
Automated system, itself and sensor communicative couplings, for based on the wafer edge region band pressure of the automatic calculation compensation of the information collected by sensor and retaining ring pressure and by the data feedback that calculates to controller;
Controller, it adjusts wafer edge region band pressure and retaining ring pressure in real time according to the feedback data from automated system; And
Lapping device, it carries out cmp, to realize the real-time control of Waffer edge profile according to the wafer edge region band pressure after adjustment and retaining ring pressure under the control of the controller.
8. system according to claim 7, is characterized in that, described controller comprises grinding head pressure controller.
9. system according to claim 7, is characterized in that, wafer is divided into multiple zone, and applied pressure is independently controlled in each zone of wafer.
10. system according to claim 7, is characterized in that, described real-time control system comprises Advanced process control APC system.
11. 1 kinds, for the wafer thickness profile real-time control method of chemomechanical copper grinding, comprising:
Wafer is divided into multiple zone, in each zone, detects surface reflectivity respectively, to obtain real-time wafer surface reflectivity rate data;
Analyze surface reflectivity difference between each zone to obtain real time profile information;
Based on the zone pressure distribution of the automatic calculation compensation of real time profile information;
By the data feedback that calculates to controller;
Zone pressure distribution is adjusted in real time according to feedback data by controller; And
Cmp is carried out, to realize the real-time control of wafer thickness profile according to the zone pressure distribution after adjustment.
12. methods according to claim 11, is characterized in that, adjustment zone pressure distribution comprises the pressure in independent each zone of adjustment.
13. methods according to claim 11 or 12, it is characterized in that, described multiple zone comprises 5 zone.
14. 1 kinds, for the wafer thickness profile real-time control system of chemomechanical copper grinding, comprising:
Sensor, it detects surface reflectivity respectively to obtain real-time wafer surface reflectivity rate data in multiple zone of wafer;
Automated system, itself and sensor communicative couplings, data for obtaining based on sensor analyze surface reflectivity difference between each zone to obtain real time profile information, based on the zone pressure distribution of the automatic calculation compensation of real time profile information, and by the data feedback that calculates to controller;
Controller, it adjusts zone pressure distribution in real time according to the feedback data from automated system; And
Lapping device, it carries out cmp, to realize the real-time control of wafer thickness profile according to the zone pressure distribution after adjustment.
15. systems according to claim 14, is characterized in that, in multiple zone of wafer, applied pressure is independently controlled and regulates.
16. systems according to claims 14 or 15, it is characterized in that, described multiple zone comprises 5 zone.
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| CN (1) | CN105437076A (en) |
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| CN108778625A (en) * | 2016-08-01 | 2018-11-09 | 爱思开矽得荣株式会社 | Measuring apparatus and its milling time control method are polished, and includes its polishing control system |
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