CN105429167B - A kind of flexible simultaneously off-network switching device of micro-capacitance sensor - Google Patents

A kind of flexible simultaneously off-network switching device of micro-capacitance sensor Download PDF

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CN105429167B
CN105429167B CN201510745541.1A CN201510745541A CN105429167B CN 105429167 B CN105429167 B CN 105429167B CN 201510745541 A CN201510745541 A CN 201510745541A CN 105429167 B CN105429167 B CN 105429167B
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micro
capacitance sensor
rectifier diode
circuit
igbt
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CN201510745541.1A
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CN105429167A (en
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伍春生
付勋波
许洪华
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北京科诺伟业科技股份有限公司
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Abstract

A kind of flexible simultaneously off-network switching device of micro-capacitance sensor, is made of static switch circuit, driving circuit and intelligent control unit.Static switch circuit is the hardware body of switching device;Quick on-off is realized using full-control type semiconductor devices IGBT;And pass through IGBT module and realize its blocking ability to bi-directional voltage and electric current with four arranging for diodes;Surge absoption suppression device is respectively arranged on the ac bus of micro-capacitance sensor and bulk power grid, IGBT overvoltages is avoided to fail.Driving circuit is driven using optocoupler;And realize being isolated for control signal and drive signal;The fast and reliable break-makes of IGBT are ensured by the driving voltage of+15V and 9V.Intelligent control unit is using digitized signal processor as control element;It is completed by data acquisition circuit to the state of power grid and the diagnosis of synchronous logic, according to diagnostic result, utilizes the existing intelligent control and status monitoring to static switch of I/O causes for gossip;Its data interaction with external other equipment and host computer is realized by communication module.

Description

A kind of flexible simultaneously off-network switching device of micro-capacitance sensor

Technical field

The present invention relates to a kind of grid-connected off-grid switching devices of flexibility for micro-capacitance sensor.

Background technology

Traditional switch is a mechanical hardware device, such as relay, but with the hair of semiconductor technology Exhibition, high speed controllable type switch continues to bring out, such as thyristor SCR, IGBT, IGCT.High-speed switch based on semiconductor technology is with working as The combination of preceding digital signal processor techniques can be designed that the flexible switch for meeting micro-capacitance sensor requirement completely.According to For IEEE1547 and UL1741 to grid-connected requirement, switch should have the characteristics such as quick, protection, synchronous, in addition consider scene Actual installation condition and cost.Switch response speed based on CB technologies is slower, and the switching speed of relay is generally arrived in 20ms Between 100ms, but circuit design is simple with control, and conducting resistance is low, cheap, therefore be not very to switching speed requirements High occasion is widely adopted.Switch response speed based on thyristor SCR technology is generally in half of power frequency period a to work In the frequency period (power grid to 50Hz is 10ms to 20ms), the product response speed that some manufacturers provide can reach a quarter A power frequency period has fully met the requirement of micro-grid system static switch;Switch response speed one based on IGBT technologies As within 100 μ s and can realize moment turn off.IGBT can be replaced with IGCT for the switch of higher voltage grade.

The switching of quick and off-network is one of core technology of micro-capacitance sensor, in recent years with the development of micro-capacitance sensor technology, and Off-network handoff technique also becomes the hot spot of research, but proposes mainly from the technical need of micro-capacitance sensor mostly and off-network is quickly cut The method changed is not proposed individually for the angle of apparatus for fast switching in itself.102170134 B of Chinese patent CN are disclosed Simultaneously off-network takes over seamlessly intelligent control method to a kind of micro-capacitance sensor based on the GOOSE means of communication, and position is switched according to different grid entry points Combinations of states logical expression is put, matches micro-capacitance sensor present mode of operation, by acquiring each grid entry point in real time, load, dividing The power information of cloth power supply, energy storage inverter, while according to the operational mode matched, calculate the exchange work(of current grid entry point Rate value judges that power is full of scarce situation, formulates load/distributed generation resource excision plan, is finally completed micro-capacitance sensor off-network and smoothly controls System.

For fast-switching arrangement ontology, at present mostly using half control type semiconductor switch thyristor, for wholly-controled device IGBT is seldom as the device for being switched fast switch.103401266 B of Chinese patent CN disclose it is a kind of realization inverter and from The device and method of net seamless switching, switch main body use controllable silicon SCR, and control unit uses digital signal processor, passes through The sense of current by the filter inductance detected reversely gives control output limitation value, to the institute in closed state State that inverse parallel is silicon-controlled to send out cut-off signals to realize rapidly switching off for switch.

Invention content

The shortcomings that the purpose of the present invention is overcoming the prior art, proposes a kind of flexible grid-connected off-grid switching dress of micro-capacitance sensor It puts.The present invention is based on full-control type semiconductor devices IGBT, and switch unit has complete protection, driving and control circuit, and ties The digital signal processor realization for closing intelligent control unit switches the quick and off-network of micro-capacitance sensor.Switching circuit ontology of the present invention Speed is fast, power consumption is smaller, is controlled using full-digital intelligent, and control method is simple, can realize the quick flat sliding cutting of micro-capacitance sensor It changes.

Technical scheme is as follows:

Micro-capacitance sensor of the present invention is flexible and off-network switching device is mainly by static switch circuit, driving circuit and intelligent control Unit three parts form.The input terminal access micro-capacitance sensor of static switch circuit, the output terminal access bulk power grid of static switch circuit; The input terminal of driving circuit is connected to the output I/O ports of intelligent control unit, and the output terminal of driving circuit is connected to static state and opens The control port on powered-down road;Voltage, electricity have been respectively mounted on the three-phase alternating current busbar of the input, output end of static switch circuit Flow sensor;Temperature sensor, the sampling letter of voltage, electric current and temperature sensor are mounted on full-control type IGBT switching circuits Input number as intelligent control unit, the output terminal of intelligent control unit are connected to drive by I/O mouthfuls in the form of analog signal Dynamic circuit.

Static switch circuit is the hardware body of switching device.The present invention is realized fast using full-control type semiconductor devices IGBT Fast break-make.But due to typical commercial IGBT module and the two-way turn-off capacity without voltage and electric current, and micro-capacitance sensor will Ask switch that there must be the blocking ability of bi-directional voltage and electric current, the present invention is by arrangements different from IGBT's to diode come real This existing function.Since IGBT has the ability of high speed turn-off electric current, very big electricity is generated on IGBT for di/dt is prevented to be coupling in Pressure impact, input that circuit main body switch in IGBT export both sides and have been respectively mounted surge absoption suppression device, so as to avoid IGBT Overvoltage failure;Compared to mechanical switch, semiconductor switch is although switching speed is fast, and anti-overvoltage and overload capacity are poor, for it Omnibearing protection is carried out, voltage and current sensor have been respectively mounted in the both sides of IGBT switch inlet ports, for detecting power grid Voltage and current, voltage access intelligent control unit with current sensor by signal wire.

The driving circuit is driven using optocoupler, and realizes being isolated for control signal and drive signal.Intelligent control single The switch actuating signals that member is sent out driven by triode after by optocoupler realize Phototube Coupling.Optocoupler power use+15V with- The driving voltage of 9V ensures the fast and reliable break-makes of IGBT.

The intelligent control unit is using digitized signal processor as control device;It is complete by data acquisition circuit The pairs of state of power grid and the diagnosis of synchronous logic according to diagnostic result, pass through the existing intelligent control to static switch of I/O causes for gossip And status monitoring;Its data interaction with external other equipment and host computer is realized by communication module.

The electric network state diagnosis employs the judgment method that instantaneous voltage is combined with frequency judgement;Synchronous logic is examined It is disconnected to be based on following two conditions:

(1) the voltage amplitude value difference very little of static switch both sides, ideal situation zero;

(2) there are frequency differences for the voltage of static switch both sides.

The intelligent control unit includes turning on and off two processes to the main of IGBT switch main bodies:

Control flow from turning off to opening:

(1) when detecting that bulk power grid state is normal and is communicated with outside;

(2) logistic diagnosis is synchronized, until meeting synchronous condition;

(3) switch provisioning instruction is assigned.

It is from the control flow for opening to shutdown:When detecting bulk power grid abnormal state, switch-off command is assigned.

Description of the drawings

Fig. 1 flexibility static switch composition frame charts;

The energy flow graph of bulk power grid is flowed to when Fig. 2 a static switches are opened from micro-capacitance sensor;

The energy flow graph of micro-capacitance sensor is flowed to when Fig. 2 b static switches are opened from bulk power grid;

Fig. 2 c static switches flow to the energy flow graph of bulk power grid from micro-capacitance sensor when turning off;

The energy flow graph of micro-capacitance sensor is flowed to when Fig. 2 d static switches are opened from bulk power grid;

Absorption protection circuit topologies of Fig. 3 a based on two-way surge absoption suppression device;

Absorption protection circuit topologies of Fig. 3 b based on Crowbar circuits;

Circuit topology is protected in absorptions of Fig. 3 c based on clamp absorbing circuit;

Fig. 4 static switch switching control flow charts;

Fig. 5 autonomies are to grid-connected switching waveform;

Fig. 6 is grid-connected to autonomous switching waveform.

Specific embodiment

The present invention will be further described with reference to the accompanying drawings and detailed description.

As shown in Figure 1, micro-capacitance sensor of the present invention is flexible and off-network switching device is mainly by static switch circuit, driving circuit And intelligent control unit three parts composition.The input terminal connection micro-capacitance sensor of static switch circuit, static switch circuit is micro-capacitance sensor Three-phase alternating current pass-out mouth, the output terminal connection bulk power grid of static switch circuit;The input of driving circuit terminates to intelligent control The output I/O ports of unit processed, the output of driving circuit terminate to the control port of static switch;Intelligent control unit mainly by Modulate circuit and AD conversion module, I/O mouthfuls, electric network fault and synchronous logic diagnosis and communication module composition;Intelligent control unit Input interface reception installed on static switch circuit voltage, electric current, temperature sensor output signal and static state The status signal of Switch main body, above-mentioned signal are accessed in the form of analog quantity from I/O ports.The output terminal of intelligent control unit leads to It crosses I/O mouthfuls and driving circuit is connected in the form of analog signal.

The static switch circuit main part is made of an IGBT device S and four rectifier diode D1~D4; The cathode of first diode D1 is connected with the cathode of third diode D3 and the collector C of IGBT device S;Second diode D2's Anode is connected with the anode of the 4th diode D4 and the emitter of IGBT device S;The cathode of second diode D2 and the one or two pole The anode of pipe D1 is connected, and as the inlet wire entrance of micro-capacitance sensor;The cathode of 4th diode D4 and the anode of third diode D3 It is connected, and the inlet wire as bulk power grid exports.In addition to static switch circuit main body circuit, static switch circuit input terminal and Output terminal is respectively provided with surge absoption suppression device:Surge absoption the suppression device T1 and T2 installed as shown in Figure 1;First surge It absorbs suppression device T1 to be mounted on the three-phase alternating current busbar of input port, one end of the first surge absoption suppression device T1 and the The cathode of the anode of one diode D1 and the second diode D2 are connected, the other end ground connection of the first surge absoption suppression device T1; Second surge absoption suppression device T2 is mounted on the outlet ac bus of bulk power grid, second surge absoption suppression device T2 one end It is connected with the anode of third diode D3 and the cathode of the 4th diode D4, another termination of the second surge absoption suppression device T1 Ground;During installation, the position of the first surge absoption suppression device T1 and the second surge absoption suppression device T2 should be as close to quiet State switching circuit main body.In addition, static switch circuit the three-phase alternating current three-phase of input terminal and output terminal be respectively arranged with voltage and Current sensor for detecting the three-phase voltage of power grid and electric current, installs PT100 temperature sensors on static switch circuit, The signal of all voltage sensors, current sensor and temperature sensor accesses the mould of intelligent control unit by analog circuit Intend sample port.

The driving circuit realizes the driving to full-control type IGBT device using optocoupler U1 as core circuit.From intelligent control The control terminal SS of unit processed is connected by I/O mouthfuls of analog circuit and the base stage of first resistor R1 and triode Q1, triode Q1's The base stage and control signal ground GND of second resistance R2 in parallel between base stage and emitter, triode Q1 are connected;The hair of triode Q1 Emitter-base bandgap grading is by current-limiting resistance R3 with the 3rd foot of optocoupler U1 is driven to be connected;Drive the 2nd foot of optocoupler U1 by the first pull-up resistor R4 with Control power supply VCC is connected;The 5th feet of optocoupler U1 connect the power supply of -9V;The 5th foot of driving optocoupler U1 connects 15V power supplies;It drives The emitter E relatively with full-control type IGBT device S of the power supply of dynamic optocoupler U1 is connected;Power supply 15V and relatively E Between the first decoupling capacitance C1 of parallel connection between parallel connection;Power supply source -9V second decoupling capacitance C2 of parallel connection between relatively E;Drive optocoupler The 6th, the 7 foot short circuits of U1 are exported for optocoupler, and the 8th foot of driving optocoupler U1 connect the second pull-up resistor R5 with optocoupler outlet chamber;It drives The output of dynamic optocoupler U1 is by driving resistance R6 and the base stage G of full-controlled switch IGBT device S to be connected.The driving circuit is complete The base stage G surge absoption suppression devices in parallel between emitter E and pull down resistor R7 of control type switch IGBT device S, for protecting Full-controlled switch IGBT device S control terminals input overvoltage and electrostatic energy absorb, and ensure the safety of full-controlled switch IGBT device S Stablize break-make.

Intelligent control unit uses digitized signal processor as control unit, mainly by modulate circuit and AD conversion mould Block, I/O mouthfuls, electric network fault and synchronous logic diagnosis and communication module composition;Shape to power grid is completed by data acquisition circuit The diagnosis of state and synchronous logic according to diagnostic result, passes through the existing intelligent control and status monitoring to static switch of I/O causes for gossip; Its data interaction with external other equipment and host computer is realized by communication module.

The static switch circuit main part can realize the blocking ability to bi-directional voltage and electric current, with reference to Fig. 2 a The specific course of work is illustrated to 2d.

When full-controlled switch IGBT device S is opened, C, E both ends of full-controlled switch IGBT device S are connected, at this time micro- electricity The forward voltage and electric current of net after the C-terminal to E ends of full-controlled switch IGBT device S, pass through the 4th by the first diode D1 Diode D4 flows to the outlet of bulk power grid, as shown in Figure 2 a;Similarly, the forward voltage of bulk power grid and electric current pass through third diode After D3, behind the E ends to C-terminal of full-controlled switch IGBT device S, the entrance of micro-capacitance sensor is flowed to by the second diode D2, is such as schemed Shown in 2b.When full-controlled switch IGBT device S is turned off, the cut-off of C, E both ends, the forward voltage of micro-capacitance sensor and electric current lead at this time It after crossing the first diode D1, since third diode D3 is unable to reverse-conducting and blocks, as shown in Figure 2 c;Similarly, bulk power grid After forward voltage and electric current are by third diode D3, since the first diode D1 is unable to reverse-conducting and block, such as Fig. 2 d institutes Show.

Full-controlled switch IGBT has the ability of high speed turn-off electric current, the exemplary currents change rate di/ of IGBT in current transformer For dt generally in several kA/us, this is related with the line impedance being connected on static switch.In addition, transformer etc. in micro-grid system Equipment also has very high impedance, and transformer leakage inductance impedance representative value is generally the 5% of its own impedance, similary micro-grid system In the transient impedances of the equipment such as motor can bigger.In this way in the moment of switch motion, di/dt couplings can generate very on IGBT Big voltge surge.For voltge surge is avoided to damage IGBT, it is necessary to corresponding surge absoption suppression device is installed, with reference to figure 3a to Fig. 3 c illustrate the specific implementation process of three kinds of surge absoption suppression devices of the present invention.

Fig. 3 a are surge absoption suppression devices, and the device products are ripe, and circuit design is simple, common surge suppressor master There are spark gap type device, metal oxide varistor, three kinds of the surge suppressor based on semiconductor.Due to each type Surge suppression device material it is different from operation principle, so the characteristics such as its response time, surge energy and voltage breakdown Difference only need to select suitable surge suppressor according to different application scenarios.

It is not occasion very greatly that surge absoption suppression device, which is generally used for di/dt variations, in the occasion of di/dt variations very greatly Under, surge absoption suppression device itself is also possible to damage while protection switch, and the crowbar circuits shown in Fig. 3 b This shortcoming can be made up.When detecting overvoltage, input terminal is directly grounded or passed through with the high-voltage power supply being connect by thyristor One bleeder resistance ground connection, so as to which the voltage wink speed for making exchange side reduces, but the electric current for also resulting in exchange side simultaneously increases.

In order to overcome the problems, such as exchange side overcurrent, the capacitor-clamped absorbing circuit shown in Fig. 3 c can be used.When exchange side goes out During existing overvoltage, charged by pre-charge circuit to clamping capacitance, so as to which the voltage of exchange side is limited in safe range.It is in parallel Resistance at capacitance both ends is used for energy on capacitance of releasing.

When it is implemented, surge absoption suppression device of the present invention can select three of the above to close according to different application scenarios Suitable circuit topology or the form wherein combined, with the effect being optimal.

Fig. 4 is full-control type IGBT device S switching control flow charts.It is main to perform AD samplings, bulk power grid condition adjudgement, micro- electricity The functions such as net state judges and switching logic controls.The condition adjudgement of bulk power grid judges it is that full-control type IGBT device S is fast with synchronous The core of fast break-make judges whether this accurately to directly affect the performance taken over seamlessly.To bulk power grid failure in micro-capacitance sensor Judgement the problem of being one extremely complex, the especially three-phase alternating current system to multiple inverter parallel group net operations is simple For the sake of, present invention employs the judgment method that instantaneous voltage is combined with frequency judgement, in order to improve the bulk power grid shape of system The speed and reliability of state detection, the condition that instantaneous voltage is unsatisfactory for bulk power grid normal operation with any one in frequency are just recognized It breaks down for bulk power grid;Conversely, the two is satisfied by bulk power grid normal running (operation) conditions, just think that bulk power grid is normal.

Fig. 5 arrives grid-connected handoff procedure experimental waveform to be autonomous, from experimental result it can be seen that being detected in static switch Bulk power grid is normal and the voltage of bulk power grid and micro-capacitance sensor is tuned into frequency, same to phase, with amplitude after, at once switch mode switch make it is inverse Become device and grid-connect mode is switched to by autonomy operation, after 2ms, open static switch.Due to cannot be guaranteed invertor operation pattern with Static switch simultaneously turns off, and just allows to open static switch after acting in order to ensure mode switch, general to be delayed after a period of time Static switch is just acted, this causes inverter the fluctuation of 8ms occur in grid-connected instantaneous output current, rear gradually steady.

Fig. 6 is grid-connected to autonomous handoff procedure experimental waveform, from experimental result as can be seen that detecting bulk power grid event After barrier, static switch disconnects immediately, and cut-out and the connection of bulk power grid, inverter also go to autonomous fortune by the pattern of being incorporated into the power networks quickly Row pattern.

Claims (9)

1. a kind of micro-capacitance sensor is flexible and off-network switching device, the switching device include static switch circuit, driving circuit And intelligent control unit;
The input terminal access micro-capacitance sensor of the static switch circuit, the outlet side access bulk power grid of static switch circuit;
The input of the driving circuit terminates to the output I/O ports of intelligent control unit, and the output of driving circuit terminates to quiet The control port of state switching circuit;
The intelligent control unit input by I/O mouthfuls receptions from static switch circuit voltage, electric current, temperature The output signal of sensor and the IGBT device status signal of static switch circuit main part are spent, intelligent control unit Output terminal is connected to driving circuit by I/O mouthfuls,
It is characterized in that, the static switch circuit main part by full-control type IGBT device S and four rectifier diode D1~ D4 is formed;The cathode of first rectifier diode D1 and the cathode of third rectifier diode D3 and the collector C phases of IGBT device S Connection;The emitter phase of the anode of second rectifier diode D2 and the anode of the 4th rectifier diode D4 and full-control type IGBT device S Connection;The cathode of second rectifier diode D2 and the anode of the first rectifier diode D1 are connected, and as the inlet wire entrance of micro-capacitance sensor; The cathode of 4th rectifier diode D4 and the anode of third rectifier diode D3 are connected, and the inlet wire as bulk power grid exports.
2. the flexible simultaneously off-network switching device of micro-capacitance sensor according to claim 1, which is characterized in that the static switch electricity Road main part realizes the blocking ability to bi-directional voltage and electric current, and process is as follows:
When full-control type IGBT device S is turned off, C, E both ends of full-control type IGBT device S are ended, at this time the forward voltage of micro-capacitance sensor With electric current by the first rectifier diode D1 after, since third rectifier diode D3 is unable to reverse-conducting and block;Similarly, big electricity After the forward voltage and electric current of net are by third rectifier diode D3, since the first rectifier diode D1 is unable to reverse-conducting and hinder It is disconnected;
When full-control type IGBT device S is opened, C, E both ends of full-control type IGBT device S are connected, at this time the forward voltage of micro-capacitance sensor With electric current by the first rectifier diode D1, after the C-terminal to E ends of full-control type IGBT device S, pass through the 4th rectifier diode D4 Flow to the outlet of bulk power grid;Similarly, after the forward voltage of bulk power grid and electric current are by third rectifier diode D3, through full-control type Behind the E ends to C-terminal of IGBT device S, the entrance of micro-capacitance sensor is flowed to by the second rectifier diode D2.
3. micro-capacitance sensor according to claim 1 or 2 is flexible and off-network switching device, which is characterized in that in micro-capacitance sensor and Bulk power grid is respectively provided with the first surge absoption suppression device T1 and the second surge absoption suppression device T2;First surge absoption inhibits Device T1 is mounted on the entrance ac bus of micro-capacitance sensor, anode and the second rectifier diode D2 with the first rectifier diode D1 Cathode be connected;Second surge absoption suppression device T2 is mounted on the outlet ac bus of bulk power grid, with two pole of third rectification The cathode of the anode of pipe D3 and the 4th rectifier diode D4 are connected.
4. the flexible simultaneously off-network switching device of micro-capacitance sensor according to claim 1, which is characterized in that in the static switch Voltage and current sensor on circuit is separately mounted to the micro-capacitance sensor side of static switch circuit and bulk power grid side.
5. the flexible simultaneously off-network switching device of micro-capacitance sensor according to claim 1 or 2, which is characterized in that the driving electricity The driving to controllable type IGBT device S is realized using optocoupler U1 as core circuit in road;Output control terminal from intelligent control unit SS is connected by first resistor R1 and the base stage of triode Q1, the base stage second resistance R2 in parallel with transmitting interpolar of triode Q1, And the base stage of triode Q1 is connected with control signal ground GND;The collector of triode Q1 passes through current-limiting resistance R3 and driving optocoupler The 3rd foot of U1 is connected;The 2nd foot of driving optocoupler U1 is connected by the first pull-up resistor R4 and control power supply VCC;Drive optocoupler U1 5th foot connects the power supply of -9V;The 8th foot of driving optocoupler U1 connects 15V power supplies;Drive the 15V power supplies of optocoupler U1 Emitter E ends of the ground E of ground E and -9V power supplies with full-control type IGBT device S is connected;Between power supply 15V and ground E It connects and connects the second decoupling capacitance C2 between the first decoupling capacitor C1, power supply -9V and ground E;Drive optocoupler U1 the 6th, 7 feet Short circuit is exported for optocoupler, and the 8th foot of driving optocoupler U1 connect the second pull-up resistor R5 with optocoupler outlet chamber;Driving optocoupler U1's is defeated Go out by the way that resistance R6 and the base stage G of full-control type IGBT device S is driven to be connected.
6. the flexible simultaneously off-network switching device of micro-capacitance sensor according to claim 5, which is characterized in that the driving circuit In, surge absoption suppression device and pull down resistor R7 in parallel between the base stage G of the full-control type IGBT device S and emitter E.
7. the flexible simultaneously off-network switching device of micro-capacitance sensor according to claim 1, which is characterized in that the intelligent control single Member is using digitized signal processor as control unit;Intelligent control unit is mainly by modulate circuit and AD conversion module, I/O Mouth, electric network fault and synchronous logic diagnosis and communication module composition;It is completed by data acquisition circuit to the state of power grid and same The diagnosis of logic is walked, according to diagnostic result, passes through the existing intelligent control and status monitoring to full-control type IGBT device S of I/O causes for gossip; Its data interaction with external other equipment and host computer is realized by communication module.
8. the flexible simultaneously off-network switching device of micro-capacitance sensor according to claim 7, which is characterized in that the intelligent control single Member is completed by data acquisition circuit to the state of power grid and the diagnosis of synchronous logic;Electric network state diagnosis is using instantaneous voltage With the judgment method that frequency judgement is combined;The synchronous logic diagnosis is based on following two conditions:
(1) the voltage amplitude value difference very little of static switch both sides, ideal situation zero;
(2) there are frequency differences for the voltage of static switch both sides.
9. the flexible simultaneously off-network switching device of micro-capacitance sensor according to claim 7 or 8, which is characterized in that the intelligence control Unit processed is as follows to the control flow of full-control type IGBT device S:
When intelligent control unit detects that bulk power grid state is normal, communicated with outside, and carry out synchronous logic diagnosis, until Meet synchronous condition, then assign switch provisioning instruction;
Switch-off command is assigned when intelligent control unit detects bulk power grid abnormal state.
CN201510745541.1A 2015-11-05 2015-11-05 A kind of flexible simultaneously off-network switching device of micro-capacitance sensor CN105429167B (en)

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CN106356985A (en) * 2016-08-31 2017-01-25 江苏浩峰汽车附件有限公司 Static switching circuit for micro-grid

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000116144A (en) * 1998-09-30 2000-04-21 Yaskawa Electric Corp Inverter apparatus
CN103066621A (en) * 2012-12-25 2013-04-24 合肥工业大学 Static switch and control method applied to connection of microgrid and public supply network

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000116144A (en) * 1998-09-30 2000-04-21 Yaskawa Electric Corp Inverter apparatus
CN103066621A (en) * 2012-12-25 2013-04-24 合肥工业大学 Static switch and control method applied to connection of microgrid and public supply network

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