CN105428534A - Ultraviolet photovoltaic detector with ZnO nanorod and phenanthrene nano heterogeneous composite structure - Google Patents
Ultraviolet photovoltaic detector with ZnO nanorod and phenanthrene nano heterogeneous composite structure Download PDFInfo
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- CN105428534A CN105428534A CN201510749495.2A CN201510749495A CN105428534A CN 105428534 A CN105428534 A CN 105428534A CN 201510749495 A CN201510749495 A CN 201510749495A CN 105428534 A CN105428534 A CN 105428534A
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
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Abstract
The invention discloses an ultraviolet photovoltaic detector with a ZnO nanorod and phenanthrene nano heterogeneous composite structure, belongs to the field of semiconductor and nano photoelectronic devices, and especially relates to a preparation method for the ultraviolet photovoltaic detector with the ZnO nanorod and nano heterogeneous composite structure. The substrate material of the bottom layer of the detector is glass. ITO serves as one electrode, and completely covers a substrate. After conductive slurry is dropped, the electrode is led out through a wire. The remaining part, which does not serve as an electrode, of the ITO is covered by a ZnO seed crystal layer. The thickness of the ZnO seed crystal layer is about 200 nm. The ZnO seed crystal layer is an epitaxial growth ZnO nano rod array, and the surface of the ZnO nano rod array is wrapped by organic phenanthrene. The detector provided by the invention is low in cost, is easy to implement, is high in efficiency, is good in stability, and has great application potential in the field of army and for civil use.
Description
Technical field
The invention belongs to semiconductor and nano photoelectronic devices field, refer more particularly to the preparation method of the ultraviolet photovoltaic detector of a kind of ZnO nanorod and the nano heterogeneous composite construction of phenanthrene.
Background technology
Photodetector is a kind of device optical radiation signal being converted to the signal of telecommunication, utilizes this characteristic can the change of sensing external environment.Ultraviolet light is that people with the naked eye can not observe directly, and radianting capacity is strong.In order to avoid people are subject to the direct radiation of ultraviolet light, just need by this ultraviolet light being converted to the physical quantity being convenient to detect.Ultraviolet photovoltaic detector is exactly a kind ofly sightless ultraviolet incident radiation signal can be converted to the device that can detect the signal of telecommunication.Ultraviolet photovoltaic detector has militarily been widely used in ultraviolet and has reported to the police and guidance, and civilian aspect also relates to the fields such as ultraviolet monitoring and early warning simultaneously.Therefore, many countries have carried out deeply studying widely to ultraviolet photovoltaic detector, improve constantly performance and the stability of ultraviolet photovoltaic detector, thus provide safety guarantee for the country and people.
ZnO is a kind of semi-conducting material with photoelectricity, piezoelectricity, catalysis, under normal temperature, energy gap is 3.37eV, is typical direct band gap semiconductor material with wide forbidden band, and exciton binding energy is up to 60meV simultaneously, there is excellent luminescent properties, be applicable to the research of ultraviolet light photo devices field.
ZnO nanorod has the advantage of ZnO material self, combines again high strength and the high tenacity of nano material, shows good ultraviolet detector performance and stability.But, there is a large amount of rooms trap states in ZnO nanorod surface, the electron hole pair diffusion produced when receiving ultraviolet excitation is subject to the impact of surface depletion layer, and Carrier recombination is serious, cause ZnO nanorod base ultraviolet light to lie prostrate the detection performance of detector and sensitivity low.
Summary of the invention
The object of the invention is to provide a kind of ultraviolet photovoltaic detector and the preparation method with ZnO nanorod and luxuriant and rich with fragrance Heterogeneous Composite structure, can solve detection performance and the sensitivity problem of current ZnO nanorod base ultraviolet light volt detector to a certain extent.
There is a ultraviolet photovoltaic detector for ZnO nanorod and the nano heterogeneous composite construction of phenanthrene, be made up of substrate, positive and negative electrode layer, ultraviolet light functional layer, it is characterized in that substrate is sheet glass substrate; Sheet glass deposited on substrates high work function materials ITO is as anode electrode layer; Spin coating ZnO inculating crystal layer on anode electrode layer, by hydro thermal method epitaxial growth of ZnO nanometer stick array on ZnO inculating crystal layer; Contain the ethanolic solution of organic substance phenanthrene on ZnO nano-rod array with sol evenning machine spin coating, dry substrate and make ethanol volatilization form ZnO nanorod and luxuriant and rich with fragrance functional layer; There are the ITO of electrocondution slurry and ZnO nanorod and luxuriant and rich with fragrance functional layer wire extraction electrode from dripping respectively, form ultraviolet photovoltaic detector structure of the present invention.
Described electrocondution slurry is silver slurry or conductive carbon pastes.
Described wire is spun gold or copper wire.
A kind of ultraviolet photovoltaic detector with ZnO nanorod and the nano heterogeneous composite construction of phenanthrene of the present invention, it is characterized in that what this detector was obtained by the preparation of following method, concrete steps are as follows:
The first step, cleaning ito glass sheet substrate: the sheet glass substrate depositing high merit culvert material ITO is cleaned and dries;
Second step, preparation ZnO seed precursor solution; Every gram of two acetate hydrate zinc add ethanol 15-45ml, monoethanolamine 0.25-0.75ml, ethylene glycol 0.5-1.5ml, stir until solute is dissolved in this mixed solution completely, then add 0.25-0.75ml glacial acetic acid, after fully stirring, and sealing ageing at least 12h;
3rd step, spin coating ZnO precursor solution, adopts spin coater to be spin-coated on ITO on the surface the ZnO seed precursor solution prepared, and evaporates substrate solvent;
4th step, ZnO inculating crystal layer crystallization: ZnO inculating crystal layer sol evenning machine is spin coating ZnO seed solution on ITO, obtains uniform ZnO inculating crystal layer, rapid temperature increases to 400 DEG C, and insulation 1-3h, is cooled to room temperature and obtains ZnO inculating crystal layer;
5th step, hydro thermal method epitaxial growth of ZnO nanometer stick array;
6th step, removal of impurities: substrate is taken out, rinses well, kept dry;
7th step, adopts spin-coating method in ZnO nano-rod array, adulterate phenanthrene as the functional layer of device;
8th step, drips electrocondution slurry respectively respectively on ITO and functional layer, more often drips in electrocondution slurry with one end introducing of two wires respectively, and the other end is unsettled, forms the both positive and negative polarity of ultraviolet detector.
The device of extraction electrode is fixed on test board by described ultraviolet photovoltaic detector, then the part of the electrode on ZnO nanorod and luxuriant and rich with fragrance functional layer is placed in the place of optical energy irradiation, to facilitate the performance test of device.
Ultraviolet photovoltaic detector structure of the present invention, the base material of the bottom is glass; ITO is covered in substrate completely as an electrode, drips upper electrocondution slurry, draws this electrode with wire.ITO residue is not covered by layer of ZnO inculating crystal layer as the part of electrode; Inculating crystal layer thickness is about 200nm.It ZnO inculating crystal layer is epitaxially grown ZnO nano-rod array.By the substrate vertical immersion of ZnO inculating crystal layer in two acetate hydrate zinc (Zn(CH
3cOO)
22H
2o) ZnO nano-rod array and in the mixed aqueous solution of hexamethylenetetramine (HTM) in epitaxial growth (002) orientation; ZnO nanorod diameter is 50-200nm, and length is 2-3 μm.ZnO nano-rod array surface is coated by the luxuriant and rich with fragrance institute of organic substance.
The preferred orientation of ZnO nanorod of the present invention can ensure charge carrier along ZnO nanorod in the transmission perpendicular to substrate direction, is conducive to improving photoelectric efficiency.The compound of ZnO nano-rod array and organic substance phenanthrene ensure that the formation of ZnO nanorod and luxuriant and rich with fragrance heterojunction, thus provides condition for the generation of photo-generated carrier.
In the present invention, select broad stopband ZnO semi-conducting material, effectively can filter out the response of this photodetector to visible ray.Organic substance is selected luxuriant and rich with fragrance, is because phenanthrene only can to ultraviolet light response too.ZnO and luxuriant and rich with fragrance compound, can either ensure the active layer of device filter infrared with visible ray only to ultraviolet light response, effectively can absorb ultraviolet light in conjunction with both again.Both combine the characteristic of ZnO material and the stability of nano material, possessed again organic-inorganic heterogeneous efficient luminescent properties, considerably improve detection performance and the sensitivity of ultraviolet photovoltaic detector.ZnO nanorod and the nano heterogeneous composite construction of phenanthrene show excellent performance as the functional layer of ultraviolet photovoltaic detector, and its detectivity D* can reach 9.0 × 10
13jones(1Jones=1cmHz
1/2w
-1); Sensitivity response rate R can reach 2.0 × 10
4a/W.
The ultraviolet photovoltaic detector of this ZnO nanorod of the present invention and the nano heterogeneous composite construction of phenanthrene, the advantages such as low cost, easily realization, high efficiency, good stability, have great application potential in the field such as military, civilian.
Accompanying drawing explanation
Fig. 1 is ultraviolet photovoltaic detector structural representation of the present invention;
Fig. 2 (a) is the planar S EM figure of embodiment 2 ultraviolet photovoltaic detector ZnO nano-rod array;
Fig. 2 (b) is that the section SEM of embodiment 2 ultraviolet photovoltaic detector ZnO nano-rod array schemes;
Fig. 3 (a) is the planar S EM figure of embodiment 3 ultraviolet photovoltaic detector ZnO nano-rod array/luxuriant and rich with fragrance functional layer;
Fig. 3 (b) is that the section SEM of embodiment 3 ultraviolet photovoltaic detector ZnO nano-rod array/luxuriant and rich with fragrance functional layer schemes;
Fig. 4 is the ultraviolet-visible-infrared absorpting light spectra of Fig. 2 and 3 ultraviolet light absorption materials;
Fig. 5 is the J-V curve of the ultraviolet photovoltaic detector of embodiment 1;
Fig. 6 is the responsiveness curve of the ultraviolet photovoltaic detector of embodiment 1;
Fig. 7 is the detectivity curve of the ultraviolet photovoltaic detector of embodiment 1.
Wherein, in Fig. 1: ultraviolet source 1, substrate 2, anode electrode layer 3, ZnO inculating crystal layer 4, ZnO nano-rod array 5, ZnO nanorod and luxuriant and rich with fragrance functional layer 6, electrocondution slurry 7, wire 8.
Embodiment
In order to make object of the present invention, preparation method and advantage clearly, in conjunction with the following drawings and embodiment, more detailed explanation explanation is carried out to the present invention.
Embodiment 1: a kind of ultraviolet photovoltaic detector with ZnO nanorod and the nano heterogeneous composite construction of phenanthrene, substrate 2 is sheet glass substrate; The high merit that sheet glass deposited on substrates 180nm is thick contains material ITO as anode electrode layer 3; The ZnO inculating crystal layer 4 of spin coating 200nm on anode electrode layer 3, by hydro thermal method epitaxial growth diameter be 50-200nm, length is that 2-3 μm of ZnO nano-rod array 5 is on ZnO inculating crystal layer 4; Contain the ethanolic solution of organic substance phenanthrene on ZnO nano-rod array 5 with sol evenning machine spin coating, dry substrate and make ethanol volatilization form ZnO nanorod and luxuriant and rich with fragrance functional layer 6; Respectively from dripping the ITO anode electrode layer 3, ZnO nanorod and luxuriant and rich with fragrance functional layer 6 spun gold wire 8 extraction electrode that there are silver slurry 7, form ultraviolet photovoltaic detector structure of the present invention.
Ultraviolet photovoltaic detector of the present invention, obtained by the preparation of following technique, concrete steps are as follows:
The first step, cleaning ito glass sheet substrate: the sheet glass substrate washing agent of thick for deposition 180nm high merit culvert material ITO, acetone (AR), ethanol (AR) are distinguished ultrasonic cleaning 10min in order, then by deionized water rinse substrate repeatedly, dried and preserve substrate.
Second step, preparation ZnO seed precursor solution: by two acetate hydrate zinc 2g, monoethanolamine 1ml, ethylene glycol 2ml, be dissolved into successively in ethanol 60ml, then add glacial acetic acid 1ml, after fully stirring, sealing ageing 12h.
3rd step, spin coating ZnO precursor solution: ito glass sheet substrate surface is transferred on sol evenning machine upward, ITO is dropped on the surface with the ZnO seed precursor solution of pipette, extract 100 μ L, be paved with behind ITO surface completely until solution, prewhirl and be coated with 1000rpm speed rotation 3s, spin coating rotates 30s with 4000rpm speed, blows 3-5min, solvent is evaporated after spin coating completes with hair-dryer hot blast facing to backside of substrate.
4th step, ZnO inculating crystal layer crystallization: the substrate that above-mentioned 3rd step obtains is transferred in quartz ampoule, again quartz ampoule is placed in quick anneal oven, stove rises to 400 DEG C with the speed of 20 DEG C/min, insulation 2h, take out quartz ampoule afterwards, under room temperature, naturally cool 30min, obtain the ZnO inculating crystal layer of the thick crystallization of 200nm.
5th step, Hydrothermal Growth ZnO nano-rod array: ZnO nanorod reactant liquor is poured in closed container, be preheating to 50 DEG C, and then the substrate being coated with ZnO inculating crystal layer is placed perpendicular to container bottom, be warming up to 90 DEG C again, insulation 6h, stops heating, naturally cool 2h under reaction system being placed in room temperature condition, obtain the ZnO nano-rod array that the diameter that Hydrothermal Growth goes out is 50-200nm, length is 2-3 μm.Wherein, the preparation of reactant liquor: 0.004mol bis-acetate hydrate zinc (Zn(CH
3cOO)
22H
2o) and 0.004mol hexamethylenetetramine (HTM) be dissolved in 0.2L deionized water, the reaction solution concentration in hydro-thermal reaction system is 0.02mol/L.
6th step, removal of impurities: have the substrate of ZnO nano-rod array to take out growth, repeatedly rinse 5 times with deionized water, then with hair-dryer, substrate is dried up, kept dry.
7th step, doping is luxuriant and rich with fragrance: the ethanolic solution of preparation 0.2mol/L phenanthrene, gets 50 these solution of μ L and drips and have on ZnO nano-rod array in growth, after being paved with, rotate 30s with the speed of 1000rpm with pipettor.Again substrate is transferred on heating plate, ethanol is volatilized, obtain adulterating luxuriant and rich with fragrance ZnO nano-rod array as active layer, this substrate of dry Cord blood.
8th step, draws electrode: on ITO, ZnO nanorod battle array/luxuriant and rich with fragrance active layer, drip silver slurry respectively, more often drips in silver slurry with one end introducing of two spun gold wires respectively, and the other end is unsettled, forms the positive and negative electrode of ultraviolet detector.
9th step, assembly device: be fixed on test board by the device of extraction electrode, the place making the part of the silver electrode on luxuriant and rich with fragrance active layer be placed in ultraviolet source 1 to irradiate, to facilitate the test performance of device.
Embodiment 2:(1) with sol evenning machine spin coating ZnO seed solution on ITO, obtain uniform ZnO inculating crystal layer, then annealing obtains the ZnO inculating crystal layer that thickness is about 200nm in air atmosphere; (2) on ZnO inculating crystal layer, utilize hydro thermal method epitaxial growth to go out the ZnO nano-rod array of orientation, form uniform ZnO nano-rod array.Nanorod diameter is 50-200nm, and length is 2-3 μm.Other steps are with embodiment 1.
Embodiment 3: use sol evenning machine by the ethanolic solution of phenanthrene with the spin coating of spin coating mode, the ethanolic solution dripping the phenanthrene of 50 μ L is paved with substrate, the rotating speed of sol evenning machine is regulated to be that 1000rpm rotates 30s, luxuriant and rich with fragrance ethanolic solution is fully seeped in ZnO nano-rod array, then 30min on heating plate substrate being placed in 80 DEG C, ethanolic solution can be sent out completely, and phenanthrene is coated on ZnO nanorod surface, obtains ZnO nanorod and luxuriant and rich with fragrance nano heterogeneous composite construction.
Claims (9)
1. there is a ultraviolet photovoltaic detector for ZnO nanorod and the nano heterogeneous composite construction of phenanthrene, be made up of substrate, positive and negative electrode layer, ultraviolet light functional layer, it is characterized in that substrate (2) is for sheet glass substrate; Sheet glass deposited on substrates high work function materials ITO is as anode electrode layer (3); The upper spin coating ZnO inculating crystal layer (4) of anode electrode layer (3), by hydro thermal method epitaxial growth of ZnO nanometer stick array (5) on ZnO inculating crystal layer (4); Contain the ethanolic solution of organic substance phenanthrene on ZnO nano-rod array (5) with sol evenning machine spin coating, dry substrate and make ethanol volatilization form ZnO nanorod and luxuriant and rich with fragrance functional layer (6); Respectively from dripping the ITO and ZnO nanorod and luxuriant and rich with fragrance functional layer (6) wire (8) extraction electrode that there are electrocondution slurry (7), form ultraviolet photovoltaic detector structure of the present invention.
2. a kind of ultraviolet photovoltaic detector with ZnO nanorod and the nano heterogeneous composite construction of phenanthrene as claimed in claim 1, is characterized in that described electrocondution slurry (7) is for silver slurry or conductive carbon pastes.
3. a kind of ultraviolet photovoltaic detector with ZnO nanorod and the nano heterogeneous composite construction of phenanthrene as claimed in claim 1, is characterized in that described wire (8) is spun gold or copper wire.
4. a kind of ultraviolet photovoltaic detector with ZnO nanorod and the nano heterogeneous composite construction of phenanthrene as claimed in claim 1, it is characterized in that what this detector was obtained by the preparation of following method, concrete steps are as follows:
The first step, cleaning ito glass sheet substrate: the sheet glass substrate depositing high merit culvert material ITO is cleaned and dries;
Second step, preparation ZnO seed precursor solution; Every gram of two acetate hydrate zinc add ethanol 15-45ml, monoethanolamine 0.25-0.75ml, ethylene glycol 0.5-1.5ml, stir until solute is dissolved in this mixed solution completely, then add 0.25-0.75ml glacial acetic acid, after fully stirring, and sealing ageing at least 12h;
3rd step, spin coating ZnO precursor solution, adopts spin coater to be spin-coated on ITO on the surface the ZnO seed precursor solution prepared, and evaporates substrate solvent;
4th step, ZnO inculating crystal layer crystallization: ZnO inculating crystal layer sol evenning machine is spin coating ZnO seed solution on ITO, obtains uniform ZnO inculating crystal layer, rapid temperature increases to 400 DEG C, and insulation 1-3h, is cooled to room temperature and obtains ZnO inculating crystal layer;
5th step, hydro thermal method epitaxial growth of ZnO nanometer stick array;
6th step, removal of impurities: substrate is taken out, rinses well, kept dry;
7th step, adopts spin-coating method in ZnO nano-rod array, adulterate phenanthrene as the functional layer of device;
8th step, drips electrocondution slurry respectively respectively on ITO and functional layer, more often drips in electrocondution slurry with one end introducing of two wires respectively, and the other end is unsettled, forms the both positive and negative polarity of ultraviolet detector.
5. a kind of ultraviolet photovoltaic detector with ZnO nanorod and the nano heterogeneous composite construction of phenanthrene as claimed in claim 4, it is characterized in that preparation ZnO seed precursor solution adds monoethanolamine 0.5ml, ethylene glycol 1ml in every gram of two acetate hydrate zinc, be dissolved in ethanol 30ml successively, add glacial acetic acid 0.5ml again, after abundant stirring, sealing ageing 12h.
6. a kind of ultraviolet photovoltaic detector with ZnO nanorod and the nano heterogeneous composite construction of phenanthrene as claimed in claim 4, it is characterized in that spin coating ZnO precursor solution is transferred on sol evenning machine ito glass sheet substrate surface upward, ITO is dropped on the surface with the ZnO seed precursor solution of pipette, extract 100 μ L, be paved with behind ITO surface completely until solution, prewhirl and be coated with 1000rpm speed rotation 3s, spin coating rotates 30s with 4000rpm speed, blow 3-5min with hair-dryer hot blast facing to backside of substrate after spin coating completes, solvent is evaporated.
7. a kind of ultraviolet photovoltaic detector with ZnO nanorod and the nano heterogeneous composite construction of phenanthrene as claimed in claim 4, it is characterized in that ZnO inculating crystal layer crystallization transfers in quartz ampoule by substrate, again quartz ampoule is placed in quick anneal oven, stove rises to 400 DEG C with the speed of 20 DEG C/min, insulation 2h, take out quartz ampoule afterwards, under room temperature, naturally cool 30min, obtain the ZnO inculating crystal layer of the thick crystallization of 200nm.
8. a kind of ultraviolet photovoltaic detector with ZnO nanorod and the nano heterogeneous composite construction of phenanthrene as claimed in claim 4, it is characterized in that Hydrothermal Growth ZnO nano-rod array pours in closed container by ZnO nanorod reactant liquor, be preheating to 50 DEG C, and then the substrate being coated with ZnO inculating crystal layer is placed perpendicular to container bottom, be warming up to 90 DEG C again, insulation 6h, stop heating, naturally cool 2h under reaction system being placed in room temperature condition, obtain the ZnO nano-rod array that the diameter that Hydrothermal Growth goes out is 50-200nm, length is 2-3 μm; Wherein, the preparation of reactant liquor: 0.004mol bis-acetate hydrate zinc (Zn(CH
3cOO)
22H
2o) and 0.004mol hexamethylenetetramine (HTM) be dissolved in 0.2L deionized water, the reaction solution concentration in hydro-thermal reaction system is 0.02mol/L.
9. a kind of ultraviolet photovoltaic detector with ZnO nanorod and the nano heterogeneous composite construction of phenanthrene as claimed in claim 4, it is characterized in that doping phenanthrene the ethanolic solution pipettor of 0.2mol/L phenanthrene is got 50 these solution of μ L to drip and have on ZnO nano-rod array in growth, after being paved with, rotate 30s with the speed of 1000rpm.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107287615A (en) * | 2017-06-01 | 2017-10-24 | 北京科技大学 | A kind of vanadium doping ZnO nano-rod array light anode and its preparation method and application |
| CN109103212A (en) * | 2018-08-03 | 2018-12-28 | 中国科学院金属研究所 | A kind of flexible image sensor and its manufacturing method based on hair |
| CN112599622A (en) * | 2020-12-15 | 2021-04-02 | 广西大学 | Sandwich structure array type porous ultraviolet photoelectric detector and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101214989A (en) * | 2007-12-28 | 2008-07-09 | 中山大学 | Process for preparing nano structure of zinc oxide |
| CN101976728A (en) * | 2010-09-29 | 2011-02-16 | 昆明物理研究所 | Photovoltaic organic ultraviolet semiconductor detector |
| CN102222771A (en) * | 2011-06-30 | 2011-10-19 | 昆明物理研究所 | Organic and inorganic hybridized semiconductor ultraviolet photovoltaic detector |
| CN102492987A (en) * | 2011-12-23 | 2012-06-13 | 南京工业大学 | Process for growth of ZnO nano-wire array on flexible substrate by using solution method |
| US20130061928A1 (en) * | 2011-09-14 | 2013-03-14 | Samsung Electronics Co., Ltd. | Organic solar cell and method of manufacturing the same |
-
2015
- 2015-11-06 CN CN201510749495.2A patent/CN105428534B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101214989A (en) * | 2007-12-28 | 2008-07-09 | 中山大学 | Process for preparing nano structure of zinc oxide |
| CN101976728A (en) * | 2010-09-29 | 2011-02-16 | 昆明物理研究所 | Photovoltaic organic ultraviolet semiconductor detector |
| CN102222771A (en) * | 2011-06-30 | 2011-10-19 | 昆明物理研究所 | Organic and inorganic hybridized semiconductor ultraviolet photovoltaic detector |
| US20130061928A1 (en) * | 2011-09-14 | 2013-03-14 | Samsung Electronics Co., Ltd. | Organic solar cell and method of manufacturing the same |
| CN102492987A (en) * | 2011-12-23 | 2012-06-13 | 南京工业大学 | Process for growth of ZnO nano-wire array on flexible substrate by using solution method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107287615A (en) * | 2017-06-01 | 2017-10-24 | 北京科技大学 | A kind of vanadium doping ZnO nano-rod array light anode and its preparation method and application |
| CN107287615B (en) * | 2017-06-01 | 2019-10-11 | 北京科技大学 | A kind of vanadium doping ZnO nano-rod array light anode and its preparation method and application |
| CN109103212A (en) * | 2018-08-03 | 2018-12-28 | 中国科学院金属研究所 | A kind of flexible image sensor and its manufacturing method based on hair |
| CN109103212B (en) * | 2018-08-03 | 2020-07-10 | 中国科学院金属研究所 | Flexible image sensor based on hair and manufacturing method thereof |
| CN112599622A (en) * | 2020-12-15 | 2021-04-02 | 广西大学 | Sandwich structure array type porous ultraviolet photoelectric detector and preparation method thereof |
| CN112599622B (en) * | 2020-12-15 | 2023-09-26 | 广西大学 | Sandwich structure array type porous ultraviolet photoelectric detector and preparation method thereof |
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