CN105428480A - Light-emitting element with multiple layers of light-emitting lamination layers - Google Patents

Light-emitting element with multiple layers of light-emitting lamination layers Download PDF

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Publication number
CN105428480A
CN105428480A CN201510759572.2A CN201510759572A CN105428480A CN 105428480 A CN105428480 A CN 105428480A CN 201510759572 A CN201510759572 A CN 201510759572A CN 105428480 A CN105428480 A CN 105428480A
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China
Prior art keywords
quantum well
energy gap
layer
semiconductor layer
luminescent layer
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CN201510759572.2A
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Chinese (zh)
Inventor
林义杰
李荣仁
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Epistar Corp
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Epistar Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body

Abstract

The present invention discloses a light-emitting element comprising a substrate. A first light-emitting lamination layer is on the substrate. A tunneling layer is on the first light-emitting lamination layer. The second light-emitting lamination layer is on the tunneling layer. A contact layer is on the second light-emitting lamination layer.

Description

There is the light-emitting component of the luminous lamination of multilayer
The divisional application that the application is application number is 201110217299.2, the applying date is on 08 01st, 2011, application people is Jingyuan Photoelectricity Co., Ltd, denomination of invention is the application for a patent for invention of " light-emitting component with the luminous lamination of multilayer ".
Technical field
The present invention relates to a kind of light-emitting component, particularly relate to a kind of light-emitting component with multiple luminescent layer interactive stacking.
Background technology
Light-emitting diode (Light-emittingDiode; LED) be a kind of solid semiconductor element, it at least comprises p-n junction face (p-njunction), and this p-n junction face is formed between p-type and n-type semiconductor layer.When applying bias voltage to a certain degree on p-n junction face, the electrons of the hole in p-type semiconductor layer in n-type semiconductor layer is combined and discharges bright dipping.The region that this light produces generally is also called luminous zone (light-emittingregion).
The principal character of LED is that size is little, luminous efficiency is high, the life-span is long, reaction is quick, reliability is high and colourity good, has been widely used at present on electrical equipment, automobile, signboard and traffic sign.Along with the appearance of all-colour LED, LED has started to replace traditional lighting apparatus gradually, as fluorescent lamp and white heat bulb.
In the manufacturing cost of LED, the price of substrate accounts for very large proportion in manufacturing cost, so how reducing substrate use amount is in the led the subject under discussion merited attention.
Summary of the invention
Light-emitting component has substrate; First luminous lamination is positioned on substrate; Tunnel layer is positioned on the first luminous lamination; Second luminous lamination is positioned on tunnel layer; And contact layer is positioned on the second luminous lamination.First luminous lamination has the first semiconductor layer, the first luminescent layer and the second semiconductor layer and is sequentially formed between substrate and tunnel layer from substrate; Second luminous lamination has the 3rd semiconductor layer, the second luminescent layer and the 4th semiconductor layer and is sequentially formed between contact layer and tunnel layer from tunnel layer.
Accompanying drawing explanation
The embodiment of Fig. 1 disclosed by the present invention.
The another embodiment of Fig. 2 disclosed by the present invention.
Embodiment
Embodiments of the invention can be described in detail, and are drawn in accompanying drawing, and same or similar part can occur at each accompanying drawing and explanation with identical number.
As shown in Figure 1, light-emitting component 1 has substrate 10 to embodiment; First luminous lamination 2 is positioned on substrate 10; Tunnel layer 12 is positioned on the first luminous lamination 2; Second luminous lamination 3 is positioned on tunnel layer 12; And contact layer 14 is positioned on the second luminous lamination 3.First luminous lamination 2 has the first semiconductor layer 22, first luminescent layer 24 and the second semiconductor layer 26 is sequentially formed between substrate 10 and tunnel layer 12 from substrate 10; Second luminous lamination 3 has the 3rd semiconductor layer 32, second luminescent layer 34 and the 4th semiconductor layer 36 is sequentially formed between contact layer 14 and tunnel layer 12 from tunnel layer 12.Known luminescence element is that a substrate has a luminous lamination, and the light-emitting component 1 of this embodiment is that a substrate 10 has two luminous laminations, and one of advantage is the luminous efficiency can with about two known luminescence elements; But two substrates need be used compared to two known luminescence elements, another advantage of this embodiment only uses a substrate, reduces the use amount of substrate, reduces manufacturing cost.
Substrate 10 can in order to grow and/or to support the luminous lamination on it.Its material can be insulating material, such as, be sapphire (Sapphire), diamond (Diamond), glass (Glass), quartz (Quartz), acryl (Acryl) or aluminium nitride (AlN) etc.The material of substrate 10 also can be electric conducting material, comprises copper (Cu), aluminium (Al), diamond-like carbon film (DiamondLikeCarbon; DLC), carborundum (SiC), metal-base composites (MetalMatrixComposite; MMC), ceramic matric composite (CeramicMatrixComposite; CMC), silicon (Si), Echothiopate Iodide (IP), zinc selenide (ZnSe), GaAs (GaAs), germanium (Ge), carborundum (SiC), gallium phosphide (GaP), gallium arsenide phosphide (GaAsP), zinc selenide (ZnSe), zinc oxide (ZnO), indium phosphide (InP), lithium gallium oxide (LiGaO 2) or lithium aluminate (LiAlO 2).Can be wherein such as sapphire (Sapphire), GaAs (GaAs) or carborundum (SiC) etc. in order to grow the material of luminous lamination.
First luminous lamination 2 and/or the second luminous lamination 3 directly can grow in substrate 10 and be formed, or are fixed on substrate 10 by tack coat (not shown).The group that the element that the material of the first luminous lamination 2 and the second luminous lamination 3 comprises more than one is selected from gallium (Ga), aluminium (Al), indium (In), phosphorus (P), nitrogen (N), zinc (Zn), cadmium (Cd) are formed with selenium (Se).First semiconductor layer 22 and the second semiconductor layer 26 electrically different; 3rd semiconductor layer 32 and the 4th semiconductor layer 36 electrically different.First luminescent layer 24 and the second luminescent layer 34 can produce light, and wherein the first luminescent layer 24 has the first energy gap, and the second luminescent layer 34 has the second energy gap.In this embodiment, the first energy gap and the second energy gap different, the energy gap difference of the first energy gap and the second energy gap is between 0.3eV and 0.5eV, and the first energy gap can be less than or greater than the second energy gap, and such as the first energy gap is 1.45eV, and the second energy gap is 1.9eV.In another embodiment, the only human eye that first luminescent layer 24 produces cannot the invisible light of identification, the invisible light wavelength of this embodiment is about and is less than 400nm or is greater than 780nm, be preferably between 780nm and 2500nm or between 300nm and 400nm, be more preferred between 780nm and 900nm.The visible ray of the only human readable that the second luminescent layer 34 produces, the visible wavelength of this embodiment, about between 400nm and 780nm, is preferably between 560nm and 750nm.In another embodiment, the light that first luminescent layer 24 produces has the first dominant wavelength, the light that second luminescent layer 34 produces has the second dominant wavelength, and the wavelength difference of the first dominant wavelength and the second dominant wavelength is about 150nm to 220nm, and the first dominant wavelength can be greater than or less than the second dominant wavelength.This embodiment can be applicable to medical field, and one of advantage is that a light-emitting component can have difference in functionality simultaneously; Such as the first dominant wavelength is 815nm, can promote wound healing, and the second dominant wavelength is 633nm, contributes to eliminating microgroove.
In another embodiment, first luminescent layer 24 is formed by the first quantum well and the second quantum well interactive stacking, wherein the first quantum well has the first quantum well energy gap, second quantum well has the second quantum well energy gap, first quantum well energy gap and the second quantum well energy gap different, the energy gap difference of the first quantum well energy gap and the second quantum well energy gap is about 0.06eV to 0.1eV, and the first quantum well energy gap can be less than or greater than the second quantum well energy gap.Second luminescent layer 34 is formed by the 3rd quantum well and the 4th quantum well interactive stacking, wherein the 3rd quantum well has the 3rd quantum well energy gap, 4th quantum well has the 4th quantum well energy gap, 3rd quantum well energy gap and the 4th quantum well energy gap different, the energy gap difference of the 3rd quantum well energy gap and the 4th quantum well energy gap is about 0.06eV to 0.1eV, and the first quantum well energy gap can be less than or greater than the second quantum well energy gap.
Tunnel layer 12 is grown on the first luminous lamination 2, and its doping content is greater than 8x10 18/ cm 3electronics can be allowed by tunneling effect by wherein, the element that its material comprises more than one is selected from gallium (Ga), group that aluminium (Al), indium (In), phosphorus (P), nitrogen (N), zinc (Zn), cadmium (Cd) are formed with selenium (Se).In another embodiment, tunnel layer 12 is replaceable is the first tack coat, in order to engage the first luminous lamination 2 and the second luminous lamination 3.The material of the first tack coat comprises transparent conductive material, such as tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), zinc oxide (ZnO), magnesium oxide (MgO), aluminum gallium arsenide (AlGaAs), gallium nitride (GaN), gallium phosphide (GaP), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), indium zinc oxide (IZO) or tantalum oxide (Ta 2o 5); Or insulating material, such as Su8, benzocyclobutene (BCB), excessively fluorine cyclobutane (PFCB), epoxy resin (Epoxy), acrylic resin (AcrylicResin), cyclic olefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), pi (PI), Merlon (PC), Polyetherimide (Polyetherimide), fluorocarbon polymer (FluorocarbonPolymer), glass (Glass), aluminium oxide (Al 2o 3), silica (SiO 2), titanium oxide (TiO 2), silicon nitride (SiN x), spin-coating glass (SOG) or tetraethoxysilane (TEOS).Contact layer 14 is in order to conduction current, and its material comprises GaP, Al xga 1-xas (0≤x≤1) or Al aga bin 1-a-bp (0≤a≤1,0≤b≤1,0≤a+b≤1).
As shown in Figure 2, light-emitting device 4 has carrier 40 to embodiment; Second tack coat 42 is positioned on carrier 40; First ray structure 41 and the second ray structure 43 are positioned on the second tack coat 42; Electric insulation layer 44 is positioned on the second tack coat 42, first ray structure 41 and the second ray structure 43; And electric connection structure 46 is positioned on electric insulation layer 44, be electrically connected the first ray structure 41 and the second ray structure 43.The light-emitting component 1 of the first ray structure 41 and the second ray structure 43 and above-mentioned first embodiment is similar, has the first luminous lamination 2; Tunnel layer 12; Second luminous lamination 3; And contact layer 14 is positioned on transparent bonding layer 42.But the first ray structure 41 and the second ray structure 43 also have the first electrode 16 respectively and are positioned on contact layer 14 and are positioned at the second electrode 18 on first luminous lamination 2; Electric connection structure 46 can be electrically connected the second electrode 18 of the first ray structure 41 and the first electrode 16 of the second ray structure 43.
Carrier 40 can in order to grow and/or to support the ray structure on it, its material can be transparent material, such as, be sapphire (Sapphire), diamond (Diamond), glass (Glass), quartz (Quartz), acryl (Acryl), zinc oxide (ZnO) or aluminium nitride (AlN) etc.The material of carrier 40 also can be Heat Conduction Material, comprises copper (Cu), aluminium (Al), diamond-like carbon film (DiamondLikeCarbon; DLC), carborundum (SiC), metal-base composites (MetalMatrixComposite; MMC), ceramic matric composite (CeramicMatrixComposite; CMC), silicon (Si), Echothiopate Iodide (IP), zinc selenide (ZnSe), GaAs (GaAs), germanium (Ge), carborundum (SiC), gallium phosphide (GaP), gallium arsenide phosphide (GaAsP), zinc selenide (ZnSe), indium phosphide (InP), lithium gallium oxide (LiGaO 2) or lithium aluminate (LiAlO 2).Can be wherein such as sapphire (Sapphire), GaAs (GaAs) or carborundum (SiC) etc. in order to grow the material of ray structure.
Second tack coat 42 is in order to ray structure and the carrier 40 of boning, its material can be transparent adhesive material, such as Su8, benzocyclobutene (BCB), cross fluorine cyclobutane (PFCB), epoxy resin (Epoxy), acrylic resin (AcrylicResin), cyclic olefin polymer (COC), pi (PI), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), Merlon (PC), Polyetherimide (Polyetherimide), fluorocarbon polymer (FluorocarbonPolymer), glass (Glass), aluminium oxide (Al 2o 3), silica (SiO 2), titanium oxide (TiO 2), silicon nitride (SiN x), spin-coating glass (SOG) or tetraethyl silane (TEOS).Second tack coat 42 can be that electrical insulating material is with electric insulation first ray structure 41 and the second ray structure 43 simultaneously.In another embodiment, the second tack coat 42 is replaceable is the resilient coating in order to grow ray structure, and its material comprises Al xga 1-xas (0≤x≤1), Al aga bin 1-a-bp or Al aga bin 1-a-bn (0≤a≤1,0≤b≤1,0≤a+b≤1).
Electric insulation layer 44 is in order to protection and electric insulation first ray structure 41 and the second ray structure 43, its material can be insulating material, such as Su8, benzocyclobutene (BCB), cross fluorine cyclobutane (PFCB), epoxy resin (Epoxy), acrylic resin (AcrylicResin), cyclic olefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), pi (PI), Merlon (PC), Polyetherimide (Polyetherimide), fluorocarbon polymer (FluorocarbonPolymer), glass (Glass), aluminium oxide (Al 2o 3), silica (SiO 2), titanium oxide (TiO 2), silicon nitride (SiN x), spin-coating glass (SOG) or tetraethyl silane (TEOS).Electric connection structure 46 is in order to be electrically connected the first ray structure 41 and the second ray structure 43, its material is transparent conductive material, such as tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), zinc oxide (ZnO), magnesium oxide (MgO), aluminum gallium arsenide (AlGaAs), gallium nitride (GaN), gallium phosphide (GaP), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), indium zinc oxide (IZO) or tantalum oxide (Ta 2o 5), or metal material, such as germanium (Ge), copper (Cu), aluminium (Al), molybdenum (Mo), copper-Xi (Cu-Sn), copper-zinc (Cu-Zn), copper-cadmium (Cu-Cd), nickel-Xi (Ni-Sn), nickel-cobalt (Ni-Co) or billon (Aualloy).
Each embodiment cited by the present invention only in order to the present invention to be described, and is not used to limit the scope of the invention.Anyone any aobvious and easy to know modification made for the present invention or change neither depart from spirit of the present invention and scope.

Claims (10)

1. a luminescence component Bao Han ︰
One first luminous lamination, comprises one first semiconductor layer, one second semiconductor layer and one first luminescent layer between this first semiconductor layer and this second semiconductor layer, and wherein this first semiconductor layer and this second semiconductor layer is electrically different; And
One second luminous lamination, on this first luminous lamination, comprise one the 3rd semiconductor layer, one the 4th semiconductor layer and one second luminescent layer between the 3rd semiconductor layer and the 4th semiconductor layer, wherein the 3rd semiconductor layer and the 4th semiconductor layer is electrically different;
Wherein this first luminescent layer sends an invisible light, and this second luminescent layer sends a visible ray.
2. luminescence component as claimed in claim 1, wherein this first luminescent layer has one first energy gap, and this second luminescent layer has one second energy gap, and the energy gap difference of this first energy gap and this second energy gap is between 0.3eV and 0.5eV.
3. luminescence component as claimed in claim 1, also comprise a tack coat, this tack coat engages this first luminous lamination and this second luminous lamination.
4. luminescence component as claimed in claim 1, also comprise a substrate, wherein this first luminous lamination is directly grown up on this substrate.
5. luminescence component as claimed in claim 1, also comprise a substrate and a tack coat, this tack coat engages this first luminescence and is stacked on substrate.
6. luminescence component as claimed in claim 1, also comprise a tunnel layer, this tunnel layer is between this first luminous lamination and this second luminous lamination, and wherein the doping content of this tunnel layer is greater than 8x10 18/ cm 3.
7. luminescence component as claimed in claim 1, wherein this first luminescent layer is formed by one first quantum well and the mutual storehouse of one second quantum well, wherein this first quantum well has one first quantum well energy gap, this second quantum well has one second quantum well energy gap, this first quantum well energy gap and this second quantum well energy gap different.
8. luminescence component as claimed in claim 1, wherein this second luminescent layer is formed by one the 3rd quantum well and the mutual storehouse of one the 4th quantum well, wherein the 3rd quantum well has one the 3rd quantum well energy gap, 4th quantum well has one the 4th quantum well energy gap, the 3rd quantum well energy gap and the 4th quantum well energy gap different.
9. luminescence component as claimed in claim 1, wherein the invisible light that sends of this first luminescent layer is in order to promote wound healing, and the visible ray that this second luminescent layer sends is in order to eliminate microgroove.
10. luminescence component as claimed in claim 1, the invisible light that wherein this first luminescent layer sends has a dominant wavelength and is less than 400nm or is greater than 780nm, and the visible ray that this second luminescent layer sends has a dominant wavelength between 400nm and 780nm.
CN201510759572.2A 2011-08-01 2011-08-01 Light-emitting element with multiple layers of light-emitting lamination layers Pending CN105428480A (en)

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CN102593289B (en) * 2011-01-10 2015-05-20 晶元光电股份有限公司 Light-emitting element
CN104212450A (en) * 2013-05-29 2014-12-17 海洋王照明科技股份有限公司 Luminescent film, preparation method and application thereof

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US6163038A (en) * 1997-10-20 2000-12-19 Industrial Technology Research Institute White light-emitting diode and method of manufacturing the same
US20060097269A1 (en) * 2004-10-22 2006-05-11 Lester Steven D Method and structure for improved LED light output
EP1670068A1 (en) * 2004-12-09 2006-06-14 SuperNova Optoelectronics Corporation Manufacturing method and device for white light emitting
CN201067584Y (en) * 2006-12-28 2008-06-04 黄日光 Photothermal acupoint curing instrument
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