CN105428374B - With the optical sensor for repairing structure - Google Patents
With the optical sensor for repairing structure Download PDFInfo
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- CN105428374B CN105428374B CN201410474270.6A CN201410474270A CN105428374B CN 105428374 B CN105428374 B CN 105428374B CN 201410474270 A CN201410474270 A CN 201410474270A CN 105428374 B CN105428374 B CN 105428374B
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- Prior art keywords
- line
- stacked
- optical sensor
- repair
- drain line
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Abstract
There is the optical sensor for repairing structure the invention discloses one, it includes a gate line, an insulating barrier, a drain line, source line, a repair line and a photoelectric subassembly.Gate line is stacked on a substrate, insulating barrier is stacked on gate line and substrate, drain line is stacked on insulating barrier, source electrode line is stacked on insulating barrier, the parallel drain line of repair line, repair line is stacked on drain line, the stack position of the stack position correspondence drain line of repair line, repair line is electrically connected with drain line, and photoelectric subassembly is stacked on source electrode line.
Description
Technical field
The present invention relates to a kind of optical sensor, more particularly to a kind of optical sensor with reparation structure.
Background technology
X-ray detector is widely used in many fields due to the characteristic of Non-Destructive Testing in the prior art.Existing skill
The sensing drive circuit that the x-ray detector of art generally includes an X-ray ray detection panel and is electrically connected with X-ray ray detection panel.X
Light signal is converted into electric signal by optical detection panel, and electric signal is transferred into sensing drive circuit, so as to obtain corresponding figure
As information.
But, x-ray detector includes plural metal routing, and these metal routings have the risk of broken string, the X when broken string
Photo-detector can not normal operation, so broken string metal line position need to be repaired.Needed however, x-ray detector carries out repairing
Relative expense and manpower are paid, so x-ray detector cost produced when metal wire breaks how is overcome, as important
Problem.
The content of the invention
An object of the present invention, for solve optical sensor because metal wire break can not normal operation the problem of.
To achieve these objectives, the optical sensor with reparation structure of the invention is drawn comprising a gate line, an insulating barrier, one
Polar curve, source line, a repair line and a photoelectric subassembly.Gate line is stacked on a substrate, and insulating barrier is stacked over gate line
And on substrate, drain line is stacked on insulating barrier, and source electrode line is stacked on insulating barrier, the parallel drain line of repair line is repaiied
Multiple line is stacked on drain line, and the stack position of the stack position correspondence drain line of repair line, repair line is electrically connected with drain
Line, and photoelectric subassembly are stacked on source electrode line.
According to the optical sensor with reparation structure of the present invention, also include：
An at least passive layer, is stacked on the drain line；And
An at least contact hole, through an at least passive layer；
Wherein, the repair line is electrically connected with the drain line by the contact hole.
According to the optical sensor with reparation structure of the present invention, the photoelectric subassembly produces photoelectricity news according to an incident light
Number, the photoelectricity signal is exported by the drain line.
According to the optical sensor with reparation structure of the present invention, also include：
Semi-conductor layer, is formed between the insulating barrier, the drain line and the source electrode line, and the repair line is formed at this partly
On the forming position of conductor layer.
According to the optical sensor with reparation structure of the present invention, the surface resistance value of the drain line is 0.2~0.6 Ω/sq.
According to the optical sensor of repairing structure of having of the present invention, the surface resistance value of the repair line for 0.01~0.5 Ω/
sq。
According to the optical sensor with reparation structure of the present invention, also include：
One passive layer, is stacked on the photoelectric subassembly；
One contact hole, through the passive layer, with the exposed photoelectric subassembly；And
One shared electrode wire, is formed on the photoelectric subassembly, and be electrically connected with the photoelectric subassembly by the contact hole.
According to the optical sensor with reparation structure of the present invention, also include：
One shared electrode layer, is stacked on the passive layer, and forms the shared electrode wire and the repair line.
According to the optical sensor with reparation structure of the present invention, the photoelectric subassembly is included：
One electrode, is formed on the source electrode line；And
One diode layer, is formed between the source electrode line and the electrode, and the diode layer is electrically connected with the source electrode line and should
Electrode.
According to the optical sensor with reparation structure of the present invention, also include：
One protective layer, is stacked on the repair line and the shared electrode wire.
The present invention's has having the beneficial effect that for the optical sensor for repairing structure：A kind of light for having and repairing structure is provided
Sensor, it sets a repair line, and using repair line solve optical sensor because metal wire breaks can not normal operation ask
Topic.
Brief description of the drawings
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing：
Fig. 1 is the first top view of the embodiment with the optical sensor for repairing structure of the present invention；
Fig. 2 is the profile of Fig. 1 ZZ ' lines；
Fig. 3 is the second top view of the embodiment with the optical sensor for repairing structure of the present invention；
Fig. 4 is the profile of Fig. 3 AA ' lines；And
Fig. 5 is the path schematic diagram of photoelectricity signal.
In figure：
10 optical sensors
20 substrates
21 gate lines
22 insulating barriers
23 semiconductor layers
24 drain lines
25 source electrode lines
26 shared electrode layers
30 photoelectric subassemblys
31 diode layers
33 electrodes
40 protective layers
50 incident lights
260 repair lines
261 shared electrode wires
270 contact holes
271 contact holes
280 passive layers
281 passive layers
S30Photoelectricity signal
Embodiment
In order to which technical characteristic, purpose and effect to the present invention are more clearly understood from, now compare accompanying drawing and describe in detail
The preferred embodiments of the present invention.
Referring to Fig. 1, the first top view of the embodiment with the optical sensor 10 for repairing structure for the present invention.Such as
Shown in figure, the optical sensor 10 that structure is repaired in of the invention having includes plural gate line 21, plural drain line 24, plural source electrode
Line 25, plural repair line 260, plural shared electrode wire 261, plural contact hole 270 and plural photoelectric subassembly 30.Repair line 260
Parallel drain line 24, the stack position of the stack position correspondence drain line 24 of repair line 260, and repair line 260 are electrically connected with and drawn
Polar curve 24.In this way, when drain line 24 breaks, the signal produced by photoelectric subassembly 30 can be exported by repair line 260, and be made
The normal operation of optical sensor 10.
Referring to Fig. 2, the profile of the ZZ ' lines for Fig. 1.As illustrated, to further include a substrate 20, one exhausted for optical sensor 10
Edge layer 22, semi-conductor layer 23, the plural shared electrode layer 26 of passive layer 280,281, one, plural contact hole 270,271 and one are protected
Sheath 40.Gate line 21 is stacked on substrate 20, and insulating barrier 22 is stacked on gate line 21 and substrate 20, the heap of drain line 24
Stack is on insulating barrier 22, and source electrode line 25 is stacked on insulating barrier 22, and repair line 260 is stacked on drain line 24, photoelectricity
Component 30 is stacked on source electrode line 25.Furthermore, repair line 260 is formed on the forming position of semiconductor layer 23, is so repaiied
Multiple line 260 can be as light shield layer, and improves the generation of light leakage current.
Referring again to Fig. 2, semiconductor layer 23 is formed between insulating barrier 22, drain line 24 and source electrode line 25, plural passive layer
280th, 281 it is stacked on the drain line 24, shared electrode layer 26 is stacked on passive layer 281 and forms shared electrode wire
261 with repair line 260.Contact hole 270 runs through plural passive layer 280,281, and such repair line 260 is electric by contact hole 270
Property connection drain line 24.Therefore, when drain line 24 breaks, the signal that drain line 24 is transmitted can change to be passed by repair line 260
Send.In other words, the present invention solves the problem of drain line 24 breaks with repair line 260, to utilize the metal level solution of not people having a common goal's processing procedure
The problem of certainly metal wire breaks.Furthermore, contact hole 270 of the invention is newly-increased contact hole, in its not former semiconductor structure
Contact hole.In addition, passive layer 281 is stacked on passive layer 280 and photoelectric subassembly 30, contact hole 271 runs through passive layer 281
With exposed photoelectric subassembly 30.In this way, shared electrode wire 261 is formed on photoelectric subassembly 30 by contact hole 271, and electrically
Connect photoelectric subassembly 30.Protective layer 40 is stacked on repair line 260 and shared electrode wire 261, to avoid repair line 260 and be total to
Enjoy electrode wires 261 is influenceed to produce defect by external force.
Referring again to Fig. 2, photoelectric subassembly 30 includes a diode layer 31 and an electrode 33.Electrode 33 be formed at source electrode line 25 it
On, diode layer 31 is formed between source electrode line 25 and electrode 33, and diode layer 31 is electrically connected with source electrode line 25 and electrode 33.
Furthermore, shared electrode wire 261 is to be used for driving electrodes 33, in other words, and shared electrode wire 261 is used to drive photoelectric subassembly 30.
In addition, the present invention is using the formation repair line 260 of shared electrode layer 26 and shared electrode wire 261, i.e., the present invention is in same
Layer of metal layer forms repair line 260 and shared electrode wire 261, so the present invention can't change when repair line 260 is made
Processing procedure and light shield number.In other words, repair mode proposed by the invention successfully improves yield and does not result in cost and significantly increases
Plus.
Referring to Fig. 3, its second top view for the embodiment with the optical sensor 10 for repairing structure of the present invention.
As illustrated, the hatching ZZ ' of the first figure is changed to the hatching AA ' of the 3rd figure, and cuing open corresponding to the hatching AA ' of the 3rd figure
Face figure is used for the preceding signal transmission path for illustrating that metal wire broken string occurs for optical sensor 10 of the present invention, with optical sensor of the present invention
10 occur signal transmission path during metal wire broken string.
The profile of Fig. 3 and Fig. 4, Fig. 4 for Fig. 3 AA ' lines is referred in the lump.As illustrated, optical sensor 10 has two
Individual contact hole 270, photoelectric subassembly 30 produces a photoelectricity signal S according to an incident light 5030, and when the metal wire of optical sensor 10
When (drain line 24) does not break, photoelectricity signal S30Transmitted by source electrode line 25 via semiconductor layer 23 to drain line 24, drain
Line 24 is by photoelectricity signal S30Output.Referring again to Fig. 3, i.e. photoelectricity signal S30Can from top to bottom it be transmitted using drain line 24.So
And, when the drain line 24 of optical sensor 10 breaks, photoelectricity signal S30Same transmission path can not be just recycled to export,
And its path is changed to shown in Fig. 5, it is the path schematic diagram of photoelectricity signal.As illustrated, when broken string occurs for drain line 24 (in figure
At No. X) when, photoelectricity signal S30Directly it can not be exported by drain line 24, and photoelectricity signal S30Transmission path can be changed to source electrode line
25 transmission light electric signal S30To drain line 24, the transmission light electric signal S of drain line 2430To repair line 260, repair line 260 is again by light
Electric signal S30Transmit to drain line 24, in this way, drain line 24 i.e. can be by photoelectricity signal S30Output.
In other words, the repair line 260 of optical sensor 10 is electrically connected with metal wire (drain line 24), but works as optical sensor
10 when metal wire broken string not occurring, and repair line 260 will not have an impact to the transmission path of signal, and when gold occurs for optical sensor 10
When belonging to line broken string, repair line 260 can improve the problem of metal wire breaks in real time.In addition, the face electricity of drain line 24 of the present invention
Resistance can be 0.2~0.6 Ω/sq, and the surface resistance value of repair line 260 can be 0.01~0.5 Ω/sq.
In summary, the optical sensor with reparation structure of the invention includes a gate line, an insulating barrier, a drain
Line, source line, a repair line and a photoelectric subassembly.Gate line is stacked on a substrate, insulating barrier be stacked over gate line and
On substrate, drain line is stacked on insulating barrier, and source electrode line is stacked on insulating barrier, the parallel drain line of repair line, is repaired
Line is stacked on drain line, and the stack position of the stack position correspondence drain line of repair line, repair line is electrically connected with drain line,
And photoelectric subassembly is stacked on source electrode line.
Only as described above, only one embodiment of the invention not for limiting the scope that the present invention is implemented, therefore is lifted
Equivalent changes and modifications carried out by all construction, feature and spirit according to described in scope of the present invention patent, all should be included in this
In the claim of invention.
Claims (9)
1. a kind of have the optical sensor for repairing structure, it is included：
One gate line, is stacked on a substrate；
One insulating barrier, is stacked on the gate line and the substrate；
One drain line, is stacked on the insulating barrier；
Source line, is stacked on the insulating barrier；
One repair line, its parallel drain line, repair line is stacked on the drain line, the stack position correspondence of the repair line
The stack position of the drain line；
One photoelectric subassembly, is stacked on the source electrode line；
An at least passive layer, is stacked on the drain line；And
At least two contact holes, through an at least passive layer；
Wherein, the repair line is electrically connected with the drain line by least two contact hole.
2. according to claim 1 have the optical sensor for repairing structure, it is characterised in that the photoelectric subassembly enters according to one
Penetrate light and produce a photoelectricity signal, the photoelectricity signal is exported by the drain line.
3. according to claim 1 have the optical sensor for repairing structure, it is characterised in that also includes：
Semi-conductor layer, is formed between the insulating barrier, the drain line and the source electrode line, and the repair line is formed at the semiconductor
On the forming position of layer.
4. according to claim 1 have the optical sensor for repairing structure, it is characterised in that the surface resistance value of the drain line
For 0.2~0.6 Ω/sq.
5. according to claim 1 have the optical sensor for repairing structure, it is characterised in that the surface resistance value of the repair line
For 0.01~0.5 Ω/sq.
6. according to claim 1 have the optical sensor for repairing structure, it is characterised in that also includes：
One passive layer, is stacked on the photoelectric subassembly；
One contact hole, through the passive layer, with the exposed photoelectric subassembly；And
One shared electrode wire, is formed on the photoelectric subassembly, and be electrically connected with the photoelectric subassembly by the contact hole.
7. according to claim 6 have the optical sensor for repairing structure, it is characterised in that also includes：
One shared electrode layer, is stacked on the passive layer, and forms the shared electrode wire and the repair line.
8. according to claim 1 have the optical sensor for repairing structure, it is characterised in that the photoelectric subassembly is included：
One electrode, is formed on the source electrode line；And
One diode layer, is formed between the source electrode line and the electrode, and the diode layer is electrically connected with the source electrode line and the electrode.
9. according to claim 6 have the optical sensor for repairing structure, it is characterised in that also includes：
One protective layer, is stacked on the repair line and the shared electrode wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410474270.6A CN105428374B (en) | 2014-09-17 | 2014-09-17 | With the optical sensor for repairing structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410474270.6A CN105428374B (en) | 2014-09-17 | 2014-09-17 | With the optical sensor for repairing structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105428374A CN105428374A (en) | 2016-03-23 |
| CN105428374B true CN105428374B (en) | 2017-09-29 |
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ID=55506455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410474270.6A Active CN105428374B (en) | 2014-09-17 | 2014-09-17 | With the optical sensor for repairing structure |
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| Country | Link |
|---|---|
| CN (1) | CN105428374B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101308856A (en) * | 2007-05-14 | 2008-11-19 | 三菱电机株式会社 | Optical sensor |
| CN101677104A (en) * | 2008-09-17 | 2010-03-24 | 瀚宇彩晶股份有限公司 | Light-sensing element, light sensor and manufacturing method thereof |
| CN103681701A (en) * | 2012-09-24 | 2014-03-26 | 上海天马微电子有限公司 | Photoelectric conversion element, X-ray flat plate detection device and manufacturing method of X-ray flat plate detection device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4516244B2 (en) * | 2001-07-31 | 2010-08-04 | シャープ株式会社 | Substrate for active matrix liquid crystal display device and liquid crystal display device including the same |
| JP5253799B2 (en) * | 2007-12-17 | 2013-07-31 | 三菱電機株式会社 | Photosensor and method for manufacturing photosensor |
| US8115883B2 (en) * | 2009-08-27 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| CN102437113B (en) * | 2011-12-15 | 2013-04-03 | 昆山工研院新型平板显示技术中心有限公司 | Repairing method of signal disconnection of active matrix organic light-emitting display array substrate |
-
2014
- 2014-09-17 CN CN201410474270.6A patent/CN105428374B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101308856A (en) * | 2007-05-14 | 2008-11-19 | 三菱电机株式会社 | Optical sensor |
| CN101677104A (en) * | 2008-09-17 | 2010-03-24 | 瀚宇彩晶股份有限公司 | Light-sensing element, light sensor and manufacturing method thereof |
| CN103681701A (en) * | 2012-09-24 | 2014-03-26 | 上海天马微电子有限公司 | Photoelectric conversion element, X-ray flat plate detection device and manufacturing method of X-ray flat plate detection device |
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| Publication number | Publication date |
|---|---|
| CN105428374A (en) | 2016-03-23 |
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