CN105428224A - 硅片硼掺杂方法 - Google Patents
硅片硼掺杂方法 Download PDFInfo
- Publication number
- CN105428224A CN105428224A CN201510883089.5A CN201510883089A CN105428224A CN 105428224 A CN105428224 A CN 105428224A CN 201510883089 A CN201510883089 A CN 201510883089A CN 105428224 A CN105428224 A CN 105428224A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- region
- dopant source
- laser
- boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 102
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 101
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 93
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 93
- 239000010703 silicon Substances 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000013532 laser treatment Methods 0.000 claims abstract description 15
- 239000002019 doping agent Substances 0.000 claims description 79
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 26
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 26
- 235000008216 herbs Nutrition 0.000 claims description 19
- 210000002268 wool Anatomy 0.000 claims description 19
- 238000000137 annealing Methods 0.000 claims description 15
- 239000011259 mixed solution Substances 0.000 claims description 10
- 238000004528 spin coating Methods 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 7
- 241000931526 Acer campestre Species 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 abstract description 3
- 238000011282 treatment Methods 0.000 abstract 1
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 22
- 238000009792 diffusion process Methods 0.000 description 16
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 15
- 239000000654 additive Substances 0.000 description 15
- 230000000996 additive effect Effects 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000003513 alkali Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- CYDQOEWLBCCFJZ-UHFFFAOYSA-N 4-(4-fluorophenyl)oxane-4-carboxylic acid Chemical compound C=1C=C(F)C=CC=1C1(C(=O)O)CCOCC1 CYDQOEWLBCCFJZ-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 1
- -1 and wherein Substances 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- CEYULKASIQJZGP-UHFFFAOYSA-L disodium;2-(carboxymethyl)-2-hydroxybutanedioate Chemical compound [Na+].[Na+].[O-]C(=O)CC(O)(C(=O)O)CC([O-])=O CEYULKASIQJZGP-UHFFFAOYSA-L 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000001540 sodium lactate Substances 0.000 description 1
- 229940005581 sodium lactate Drugs 0.000 description 1
- 235000011088 sodium lactate Nutrition 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- MSXHSNHNTORCAW-GGLLEASOSA-M sodium;(2s,3s,4s,5r,6s)-3,4,5,6-tetrahydroxyoxane-2-carboxylate Chemical compound [Na+].O[C@H]1O[C@H](C([O-])=O)[C@@H](O)[C@H](O)[C@H]1O MSXHSNHNTORCAW-GGLLEASOSA-M 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510883089.5A CN105428224B (zh) | 2015-12-03 | 2015-12-03 | 硅片硼掺杂方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510883089.5A CN105428224B (zh) | 2015-12-03 | 2015-12-03 | 硅片硼掺杂方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105428224A true CN105428224A (zh) | 2016-03-23 |
CN105428224B CN105428224B (zh) | 2018-06-12 |
Family
ID=55506348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510883089.5A Expired - Fee Related CN105428224B (zh) | 2015-12-03 | 2015-12-03 | 硅片硼掺杂方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105428224B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109755111A (zh) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | 一种采用印刷工艺制作双向tvs芯片的方法 |
CN111524797A (zh) * | 2020-04-26 | 2020-08-11 | 泰州中来光电科技有限公司 | 一种选择性发射极的制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6429037B1 (en) * | 1998-06-29 | 2002-08-06 | Unisearch Limited | Self aligning method for forming a selective emitter and metallization in a solar cell |
US20080026550A1 (en) * | 2004-07-26 | 2008-01-31 | Werner Jurgen H | Laser doping of solid bodies using a linear-focussed laser beam and production of solar-cell emitters based on said method |
CN102723267A (zh) * | 2012-05-29 | 2012-10-10 | 奥特斯维能源(太仓)有限公司 | 晶体硅太阳能电池制造方法及激光二次烧结方法 |
CN102916077A (zh) * | 2012-09-27 | 2013-02-06 | 奥特斯维能源(太仓)有限公司 | 一种用于提高金属电极与晶体硅附着力的激光掺杂工艺 |
CN103489959A (zh) * | 2013-09-05 | 2014-01-01 | 西南科技大学 | 太阳能电池硅片表面掺硫方法 |
-
2015
- 2015-12-03 CN CN201510883089.5A patent/CN105428224B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6429037B1 (en) * | 1998-06-29 | 2002-08-06 | Unisearch Limited | Self aligning method for forming a selective emitter and metallization in a solar cell |
US20080026550A1 (en) * | 2004-07-26 | 2008-01-31 | Werner Jurgen H | Laser doping of solid bodies using a linear-focussed laser beam and production of solar-cell emitters based on said method |
CN102723267A (zh) * | 2012-05-29 | 2012-10-10 | 奥特斯维能源(太仓)有限公司 | 晶体硅太阳能电池制造方法及激光二次烧结方法 |
CN102916077A (zh) * | 2012-09-27 | 2013-02-06 | 奥特斯维能源(太仓)有限公司 | 一种用于提高金属电极与晶体硅附着力的激光掺杂工艺 |
CN103489959A (zh) * | 2013-09-05 | 2014-01-01 | 西南科技大学 | 太阳能电池硅片表面掺硫方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109755111A (zh) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | 一种采用印刷工艺制作双向tvs芯片的方法 |
CN111524797A (zh) * | 2020-04-26 | 2020-08-11 | 泰州中来光电科技有限公司 | 一种选择性发射极的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN105428224B (zh) | 2018-06-12 |
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PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220118 Address after: 518000 No. 9988 Shennan Road, Nanshan District, Shenzhen, Guangdong Patentee after: HAN'S LASER TECHNOLOGY INDUSTRY GROUP Co.,Ltd. Patentee after: Shenzhen Han's photovoltaic equipment Co.,Ltd. Address before: 201615 No. nine, Jing Jing Road, Songjiang District, Shanghai, 1000 Patentee before: SHANGHAI HAN'S NEW ENERGY TECHNOLOGY CO.,LTD. |
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TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180612 Termination date: 20211203 |
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CF01 | Termination of patent right due to non-payment of annual fee |