CN105428002B - Chip inductor and its preparation method and application - Google Patents

Chip inductor and its preparation method and application Download PDF

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Publication number
CN105428002B
CN105428002B CN201610006245.4A CN201610006245A CN105428002B CN 105428002 B CN105428002 B CN 105428002B CN 201610006245 A CN201610006245 A CN 201610006245A CN 105428002 B CN105428002 B CN 105428002B
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China
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ferrite
electrode
powder
mass ratio
chip inductor
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CN105428002A (en
Inventor
王振兴
欧阳辰鑫
黄寒寒
施威
朱建华
谭瑞飞
王智会
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Shenzhen Zhenhua Ferrite and Ceramic Electronics Co Ltd
China Zhenhua Group Science and Technology Co Ltd
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Shenzhen Zhenhua Ferrite and Ceramic Electronics Co Ltd
China Zhenhua Group Science and Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F17/0013—Printed inductances with stacked layers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/632—Organic additives
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/632—Organic additives
    • C04B35/634—Polymers
    • C04B35/63404—Polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/632—Organic additives
    • C04B35/634—Polymers
    • C04B35/63448—Polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
    • C04B35/63488—Polyethers, e.g. alkylphenol polyglycolether, polyethylene glycol [PEG], polyethylene oxide [PEO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/20—Ferrites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/29—Terminals; Tapping arrangements for signal inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/16—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates the magnetic material being applied in the form of particles, e.g. by serigraphy, to form thick magnetic films or precursors therefor

Abstract

The present invention relates to a kind of chip inductor and its preparation method and application.A kind of preparation method of chip inductor, comprises the following steps：The first ferrite layer with first electrode groove is formed on the first ferrite substrate, and first electrode is formed in first electrode groove；Electrical connector is formed on the first electrode；Media coating is formed on the first ferrite layer using ferrite slurry, electrical connector is arranged in media coating；Non magnetic insulating course is formed on media coating using non magnetic cut-off slurry, electrical connector is arranged in non magnetic insulating course；The second ferrite layer with second electrode groove is formed on non magnetic insulating course, and second electrode is formed in second electrode groove, and second electrode electrically connects with electrical connector；The second ferrite substrate is laminated on the second ferrite layer, obtains semi-finished product；Semi-finished product are sintered, obtain chip inductor.The preparation method of above-mentioned chip inductor can effectively improve the DC superposition characteristic and reliability of chip inductor.

Description

Chip inductor and its preparation method and application
Technical field
The present invention relates to the manufacturing field of inductor, more particularly to a kind of chip inductor and its preparation method and application.
Background technology
Chip inductor is one of most widely used chip components and parts of electronic industry, and its production technology is with domestic chip The development of inductance industry is also increasingly ripe, to meet that people are small-sized to the higher and higher demand of component, electronic component forward direction The directions such as change, high frequency, high-power and low-power consumption are developed.
Lamination sheet type high power inductors are to prevent one of maximally effective element of electromagnetic interference, and it can both load larger direct current Electric current, and can preferably absorb power supply noise, and the slice structure adaptation novel electron equipment volume of surface installation is small and in light weight Requirement, especially suitable for power unit to eliminate electromagnetic interference, the market demand is powerful.
However, current lamination sheet type high power inductors are by each circle planarization of inductance coil, pass through lamination work Skill with Ferrite Material is low temperature co-fired forms, this structure causes the DC superposition characteristic of inductor poor, with the increase of electric current Inductance value reduction amplitude is very big, and rated current is smaller, limits its scope of application.
The content of the invention
In consideration of it, it is necessary that providing a kind of DC superposition characteristic that can prepare preferably, with the increase inductance value of electric current drops The preparation method for the chip inductor that low amplitude is smaller and rated current is larger.
In addition, also provide a kind of chip inductor and its application.
A kind of preparation method of chip inductor, comprises the following steps：
First ferrite substrate is provided, the first iron oxygen with first electrode groove is formed on first ferrite substrate Body layer, and form first electrode in the first electrode groove；
Electrical connector is formed on the first electrode；
Media coating is formed on first ferrite layer using ferrite slurry, and described in media coating masking First ferrite layer and the first electrode, the electrical connector are arranged in the media coating, wherein, first ferrite Layer, the first electrode, the electrical connector and the media coating collectively constitute inductance unit；
Non magnetic insulating course is formed on the media coating using non magnetic cut-off slurry, the non magnetic insulating course hides Covert states media coating, and the electrical connector is arranged in the non magnetic insulating course, wherein, the non magnetic cut-off slurry bag Ferrite powder, bismuth oxide, n-propyl acetate, isobutanol, plasticizer and binding agent are included, the magnetic conductivity of the ferrite powder is The mass ratio of 5~15 Henry/rice, the bismuth oxide and the ferrite powder is 10~12:100, the n-propyl acetate with The mass ratio of the ferrite powder is 50~60:100, the mass ratio of the isobutanol and the ferrite powder is 8~15: 100；
The second ferrite layer with second electrode groove is formed on the non magnetic insulating course, and in the second electrode Second electrode is formed in groove, and the second electrode electrically connects with the electrical connector；
Second ferrite substrate is provided, second ferrite substrate is laminated on second ferrite layer, and it is described Second ferrite substrate covers second ferrite layer and the second electrode, obtains semi-finished product；And
The semi-finished product are sintered, obtain chip inductor.
In one of the embodiments, the preparation of first ferrite substrate and second ferrite substrate is included Step：Soft magnetic ferrite slurry is dried after flow casting molding, forms first ferrite substrate and second iron respectively Ferrite substrate；
Wherein, the soft magnetic ferrite slurry includes soft magnetic ferrite powder, n-propyl acetate, isobutanol, plasticizer, viscous Agent and dispersant are tied, wherein, the mass ratio of the n-propyl acetate and the soft magnetic ferrite powder is 75~85:100, it is described The mass ratio of isobutanol and the soft magnetic ferrite powder is 15~20:100.
In one of the embodiments, the medium is formed on first ferrite layer using the ferrite slurry The step of film layer is specially：The ferrite slurry is coated on first ferrite layer, and hides the ferrite slurry Covert states the first ferrite layer and the first electrode, and exposes the electrical connector, through drying, forms the deielectric-coating Layer；
Wherein, the ferrite slurry includes soft magnetic ferrite powder, n-propyl acetate, isobutanol, plasticizer, binding agent And dispersant, wherein, the mass ratio of the n-propyl acetate and the soft magnetic ferrite powder is 75~85:100, the isobutyl The mass ratio of alcohol and the soft magnetic ferrite powder is 15~20:100.
In one of the embodiments, the step of forming the first electrode in the first electrode groove be specially： Filling silver paste, forms the first electrode after drying in the first electrode groove；
The step of forming the second electrode in the second electrode groove be specially：Filled in the second electrode groove Silver paste, the second electrode is formed after drying.
In one of the embodiments, the step of forming the electrical connector on the first electrode be specially：In portion Divide silk-screen printing silver paste in the first electrode, through drying, obtain the electrical connector.
In one of the embodiments, formed using the non magnetic cut-off slurry on the media coating described non-magnetic The method of property insulating course is silk-screen printing.
In one of the embodiments, the thickness of the non magnetic insulating course is 10~20 microns.
In one of the embodiments, in addition to multiplicating prepares first ferrite layer, the first electrode, institute The step of stating electrical connector and the media coating so that formed on first ferrite substrate it is multiple stack gradually it is described Inductance unit, and in the two neighboring inductance unit, the first ferrite layer of an inductance unit is close to another institute The media coating for stating inductance unit is set, wherein, formed on the media coating of at least one inductance unit described non-magnetic Property insulating course.
The chip inductor that a kind of preparation method by above-mentioned chip inductor is prepared.
Application of the above-mentioned chip inductor in electronic product.
The preparation method of above-mentioned chip inductor is simple to operate, is easy to industrialized production, and the system of above-mentioned chip inductor Preparation Method is inserted electrode in slot electrode by using the above method, and by forming non magnetic insulating course on media coating, The thickness of electrode can effectively be increased, reduce the D.C. resistance of electrode, improve the reliability of chip inductor, meanwhile, it is non- The addition of magnetic insulating course can also reduce the magnetic saturation intensity of chip inductor, and the direct current for effectively improving chip inductor is folded Add characteristic so that chip inductor is smaller with the increase inductance value reduction amplitude of electric current and has larger rated current, than passing The rated current of the chip inductor of system improves 15 times.
Brief description of the drawings
Fig. 1 is the preparation method flow chart of the chip inductor of an embodiment；
Fig. 2 is the exploded view for the semi-finished product that the preparation method of the chip inductor shown in Fig. 1 is prepared.
Embodiment
For the ease of understanding the present invention, the present invention is described more fully below with reference to relevant drawings.In accompanying drawing Give the preferred embodiment of the present invention.But the present invention can realize in many different forms, however it is not limited to herein Described embodiment.On the contrary, the purpose for providing these embodiments is to make the understanding to the disclosure more saturating It is thorough comprehensive.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention The implication that technical staff is generally understood that is identical.Term used in the description of the invention herein is intended merely to description tool The purpose of the embodiment of body, it is not intended that in the limitation present invention.
As shown in figure 1, the preparation method of the chip inductor of an embodiment, comprises the following steps：
Step S110：First ferrite substrate is provided, the with first electrode groove is formed on the first ferrite substrate One ferrite layer, and form first electrode in first electrode groove.
Wherein, the preparation process of the first ferrite substrate is：It will be dried after soft magnetic ferrite slurry flow casting molding, and form the One ferrite substrate.
Wherein, soft magnetic ferrite slurry includes soft magnetic ferrite powder, n-propyl acetate, isobutanol, plasticizer, binding agent And dispersant.
Wherein, it is with Fe that soft magnetic ferrite powder, which is,2O3For the ferrimagnetism oxide of principal component, powder metallurgy can be used Method produces.Soft magnetic ferrite powder, n-propyl acetate, isobutanol, plasticizer, binding agent and dispersant are prepared into soft magnet Before oxysome slurry, first soft magnetic ferrite powder is dried 6~12 hours in 100~150 DEG C.
The mass ratio of n-propyl acetate and soft magnetic ferrite powder is 75~85:100.Isobutanol and soft magnetic ferrite powder Mass ratio be 15~20:100.
The mass ratio of plasticizer and soft magnetic ferrite powder is 1.5~2.5:100；Plasticizer can be commonly used in the art Plasticizer, it is preferred that plasticizer is dioctyl phthalate.For example, model DOP dioctyl phthalate plasticising Agent.
Binding agent can be binding agent commonly used in the art, it is preferred that binding agent is plexiglass. In the present embodiment, binding agent is the mixture of model B44 and A21 plexiglass or is model B44 plexiglass.When binding agent is model B44 plexiglass, binding agent Mass ratio with soft magnetic ferrite powder is 20~25:100；When the poly-methyl methacrylate that binding agent is model B44 and A21 During the mixture of ester resin, the mass ratio of binding agent and soft magnetic ferrite powder is 1~1.5:100.
The mass ratio of dispersant and soft magnetic ferrite powder is 1~1.5:100.Dispersant can be point commonly used in the art Powder, it is preferred that dispersant is Triton X-100.For example, model X-100 Triton X-100 point Powder.
Wherein, soft magnetic ferrite slurry can also be the high-power iron oxygen of the LSF-11 models of the production of Qingdao Hao Pu companies Somaplasm material.
Wherein, it is by the drying steps after soft magnetic ferrite slurry flow casting molding：75 DEG C of dryings 3.5 minutes.
Specifically, the thickness of the first ferrite substrate is 100~300 microns.
Wherein, the method for the first ferrite layer with first electrode groove being formed on the first ferrite substrate is screen printing Brush.It is plasticity ferrite slurry to form the slurry that the first ferrite layer uses.For example, the production of Yin Hui Electronic Materials Corps The plasticity ferrite slurry of H-T models.
Wherein, the thickness of the first ferrite layer is 40~60 microns.
Wherein, it is specially the step of formation first electrode in first electrode groove：Silver paste is filled in first electrode groove, is passed through First electrode is formed after drying.For example, silver paste can be the silver paste of the SP19L models of Dong Rong companies production.
Wherein, the drying steps after silver paste are filled in first electrode groove is：70 DEG C of dryings 3.5 minutes.
Step S120：Electrical connector is formed on the first electrode.
Wherein, on the first electrode formed electrical connector the step of be specially：The silk-screen printing silver in the first electrode of part Slurry, through drying, obtains electrical connector.For example, silver paste can be the silver paste of the SP19L models of Dong Rong companies production.
Wherein, the drying steps of silk-screen printing silver paste are in the first electrode of part：70 DEG C of dryings 3.5 minutes.
Step S130：Media coating is formed on the first ferrite layer using ferrite slurry, and media coating masking the One ferrite layer and first electrode, electrical connector are arranged in media coating.Wherein, the first ferrite layer, first electrode, electrical connection Part and media coating collectively constitute inductance unit.
Wherein, it is specially in the step of formation media coating on the first ferrite layer using ferrite slurry:In the first iron Ferrite slurry is coated on oxysome layer, and ferrite slurry is covered the first ferrite layer and first electrode, and makes electrical connector Expose, through drying, form media coating.
Wherein, ferrite slurry includes soft magnetic ferrite powder, n-propyl acetate, isobutanol, plasticizer, binding agent and divided Powder.
Wherein, it is with Fe that soft magnetic ferrite powder, which is,2O3For the ferrimagnetism oxide of principal component, powder metallurgy can be used Method produces.Soft magnetic ferrite powder, n-propyl acetate, isobutanol, plasticizer, binding agent and dispersant are prepared into soft magnet Before oxysome slurry, first soft magnetic ferrite powder is dried 6~12 hours in 100~150 DEG C.
The mass ratio of n-propyl acetate and soft magnetic ferrite powder is 75~85:100.Isobutanol and soft magnetic ferrite powder Mass ratio be 15~20:100.
The mass ratio of plasticizer and soft magnetic ferrite powder is 1.5~2.5:100；Plasticizer can be commonly used in the art Plasticizer, it is preferred that plasticizer is dioctyl phthalate.For example, model DOP dioctyl phthalate plasticising Agent.
Binding agent can be binding agent commonly used in the art, it is preferred that binding agent is plexiglass. In the present embodiment, binding agent is the mixture of model B44 and A21 plexiglass or is model B44 plexiglass.When binding agent is model B44 plexiglass, binding agent Mass ratio with soft magnetic ferrite powder is 20~25:100；When the poly-methyl methacrylate that binding agent is model B44 and A21 During the mixture of ester resin, the mass ratio of binding agent and soft magnetic ferrite powder is 1~1.5:100.
The mass ratio of dispersant and soft magnetic ferrite powder is 1~1.5:100.Dispersant can be point commonly used in the art Powder, it is preferred that dispersant is Triton X-100.For example, model X-100 Triton X-100 point Powder.
In the present embodiment, the soft magnetism that the ferrite slurry that media coating uses uses with preparing the first ferrite layer is prepared The composition of ferrite slurry is identical.For example, it can also be Qingdao Hao Pu companies to prepare the ferrite slurry that media coating uses The large power ferrite slurry of the LSF-11 models of production.
Wherein, the thickness of media coating is 30~50 microns.
Step S140：Non magnetic insulating course, non magnetic insulating course are formed on media coating using non magnetic cut-off slurry Media coating is covered, and electrical connector is arranged in non magnetic insulating course.
Wherein, non magnetic cut-off slurry includes ferrite powder, bismuth oxide, n-propyl acetate, isobutanol, plasticizer and glued Tie agent.
The magnetic conductivity of ferrite powder is 5~15 Henry/rice.For example, ferrite powder can be the great general production in Qingdao LSF-31 ferrite powders or the DJ1026 powders of Guiyang Jinghua Electronic Material Co., Ltd.'s production.
The mass ratio of bismuth oxide and ferrite powder is 10~12:100；The mass ratio of n-propyl acetate and ferrite powder For 50~60:100；The mass ratio of isobutanol and ferrite powder is 8~15:100.
The mass ratio of plasticizer and ferrite powder is 5~6:100.Plasticizer can be plasticizer commonly used in the art, Preferably, plasticizer is dioctyl phthalate.For example, model DOP dioctyl phthalate plasticizer.
The mass ratio of binding agent and ferrite powder is 8~10:100.Binding agent can be binding agent commonly used in the art, Preferably, binding agent is polyvinyl butyral fat.For example, model B76 polyvinyl butyral fat binding agent.
Specifically, the method that non magnetic insulating course is formed on media coating using non magnetic cut-off slurry is screen printing Brush.
Wherein, the thickness of non magnetic insulating course is 10~20 microns.
Step S150：The second ferrite layer with second electrode groove is formed on non magnetic insulating course, and in the second electricity Second electrode is formed in the groove of pole, and second electrode electrically connects with electrical connector.
Wherein, the method for the second ferrite layer with second electrode groove being formed on non magnetic insulating course is screen printing Brush.It is plasticity ferrite slurry to form the slurry that the second ferrite layer uses.For example, the production of Yin Hui Electronic Materials Corps The plasticity ferrite slurry of H-T models.
Wherein, the thickness of the second ferrite layer is 40~60 microns.
Wherein, it is specially the step of formation second electrode in second electrode groove：Silver paste is filled in second electrode groove, is passed through Second electrode is formed after drying.For example, silver paste can be the silver paste of the SP19L models of Dong Rong companies production.
Further, in addition to multiplicating prepares the first ferrite layer, first electrode, electrical connector and media coating Step, so as to multiple inductance units stacked gradually are formed on the first ferrite substrate, and in two neighboring inductance unit, one First ferrite layer of inductance unit is set close to the media coating of another inductance unit, wherein, at least one inductance list Non magnetic insulating course is formed on the media coating of member.Can there is an inductance unit in chip inductor, it is possibility to have multiple Inductance unit.
Step S160：Second ferrite substrate is provided, the second ferrite substrate, and second are laminated on the second ferrite layer Ferrite substrate covers the second ferrite layer and second electrode, obtains semi-finished product.
Wherein, the preparation process of the second ferrite substrate is：It will be dried after soft magnetic ferrite slurry flow casting molding, and form the Two ferrite substrates.Wherein, soft magnetic ferrite slurry and the first ferrite substrate of preparation that the second ferrite substrate uses are prepared The soft magnetic ferrite slurry used is identical.
Specifically, the thickness of the second ferrite substrate is 100~300 microns.
Wherein, Fig. 2 is a kind of semi-finished product 200 with an inductance unit for being prepared through above-mentioned steps, the first iron The first ferrite layer 220, media coating 230, non magnetic insulating course 240, the second ferrite are sequentially laminated with ferrite substrate 210 The ferrite substrate 260 of layer 250 and second.Wherein, formed with first electrode groove 222, first electrode groove on the first ferrite layer 220 It is filled with first electrode 270 in 222, formed with second electrode groove 252 on the second ferrite layer 250, is filled out in second electrode groove 252 Filled with second electrode 280.Formed with the electrical connector 290 electrically connected with first electrode 270, electrical connector in first electrode 270 290 are arranged in media coating 230 and non magnetic insulating course 240, and are electrically connected with second electrode 280.
Step S170：Semi-finished product are sintered, obtain chip inductor.
Wherein, the sintering step of semi-finished product is：880 DEG C sinter 4~6 hours.Specifically, sintering schedule is：From room temperature liter Temperature 2 hours to 230 DEG C, then heat up 2 hours to 280 DEG C, continue heating 6 hours to 880 DEG C, and 4~6 hours are incubated at 880 DEG C Afterwards, natural cooling.
The preparation method of above-mentioned chip inductor is simple to operate, is easy to industrialized production, and the system of above-mentioned chip inductor Preparation Method is inserted electrode in slot electrode by using the above method, and by forming non magnetic insulating course on media coating, The thickness of electrode can effectively be increased, reduce the D.C. resistance of electrode, improve the reliability of chip inductor, meanwhile, it is non- The addition of magnetic insulating course can also reduce the magnetic saturation intensity of chip inductor, and the direct current for effectively improving chip inductor is folded Add characteristic so that chip inductor is smaller with the increase inductance value reduction amplitude of electric current and has larger rated current, than passing The rated current of the chip inductor of system improves 15 times.
The chip inductor that a kind of preparation method by above-mentioned chip inductor is prepared.Due to the chip inductor by Above-mentioned preparation method is prepared so that above-mentioned chip inductor have relatively low D.C. resistance, relatively low magnetic saturation intensity and Larger rated current is larger, and smaller with the increase inductance value reduction amplitude of electric current, and the direct current for improving chip inductor is folded Add characteristic and reliability.
Above-mentioned chip inductor can be widely applied in electronic product.Wherein, electronic product is notebook computer, intelligent hand Mechanical, electrical source converter etc..
It is specific embodiment part below：
Embodiment 1
The preparation process of the chip inductor of the present embodiment is as follows：
The preparation of (1) first ferrite substrate and the second ferrite substrate：Soft magnetic ferrite powder is dried 9 in 130 DEG C Hour, then by dried soft magnetic ferrite powder, n-propyl acetate, isobutanol, plasticizer, binding agent and dispersant system It is standby into soft magnetic ferrite slurry, wherein, the mass ratio of n-propyl acetate and soft magnetic ferrite powder is 80:100, isobutanol with it is soft The mass ratio of magnetic ferrites powder is 18:100, plasticizer is model DOP dioctyl phthalate, plasticizer and soft magnetism The mass ratio of ferrite powder is 2:100, binding agent be model B44 plexiglass, binding agent with it is soft The mass ratio of magnetic ferrites powder is 20:100, dispersant be model X-100 Triton X-100, dispersant with The mass ratio of soft magnetic ferrite powder is 1:100.Again by after soft magnetic ferrite slurry flow casting molding, dried 3.5 minutes through 75 DEG C, The first ferrite substrate and the second ferrite substrate are formed respectively.The thickness of first ferrite substrate is 100 microns, the second iron oxygen The thickness of structure base board is 100 microns.
The preparation of (2) first ferrite layers：The silk-screen printing plasticity ferrite slurry on the first ferrite substrate, through 60 DEG C dry 3.5 minutes, is formed thickness for 50 microns, with first electrode groove the first ferrite layer.
(3) silver paste is filled in first electrode groove, is dried 3.5 minutes through 70 DEG C, the first electricity is formed in first electrode groove Pole.
(4) the silk-screen printing silver paste in the first electrode of part, dried 3.5 minutes through 70 DEG C, obtain electrical connector.
(5) soft magnetic ferrite powder is dried 9 hours in 130 DEG C, then by dried soft magnetic ferrite powder, acetic acid just Propyl ester, isobutanol, plasticizer, binding agent and dispersant are prepared into ferrite slurry, wherein, n-propyl acetate and soft magnet The mass ratio of oxysome powder is 80:100, the mass ratio of isobutanol and soft magnetic ferrite powder is 18:100, plasticizer is model For DOP dioctyl phthalate, the mass ratio of plasticizer and soft magnetic ferrite powder is 2:100, binding agent is model The mass ratio of B44 plexiglass, binding agent and soft magnetic ferrite powder is 20:100, dispersant is model For X-100 Triton X-100, the mass ratio of dispersant and soft magnetic ferrite powder is 1:100.Then, first Ferrite slurry is coated on ferrite layer, and ferrite slurry is covered the first ferrite layer and first electrode, and makes electrical connection Part exposes, and is dried 3.5 minutes through 75 DEG C, forms media coating, and electrical connector is arranged in media coating, the first ferrite layer, the One electrode, electrical connector and media coating collectively constitute inductance unit.The thickness of media coating is 40 microns.
(6) the non magnetic cut-off slurry of silk-screen printing on media coating, through 65 DEG C dry 3.5 minutes, formed it is non magnetic every Tomography, non magnetic insulating course covers media coating, and electrical connector is arranged in non magnetic insulating course.Wherein, non magnetic cut-off slurry Material includes ferrite powder, bismuth oxide, n-propyl acetate, isobutanol, plasticizer and binding agent, and the magnetic conductivity of ferrite powder is The mass ratio of 10 Henry/rice, bismuth oxide and ferrite powder is 11:100, the mass ratio of n-propyl acetate and ferrite powder is 55:100, the mass ratio of isobutanol and ferrite powder is 12:100, plasticizer is dioctyl phthalate, plasticizer and iron The mass ratio of oxysome powder is 5:100, binding agent is polyvinyl butyral fat, and the mass ratio of binding agent and ferrite powder is 8: 100.The thickness of non magnetic insulating course is 15 microns.
(7) the silk-screen printing plasticity ferrite slurry on non magnetic insulating course, dry 3.5 minutes, formed thick through 60 DEG C Spend for 50 microns, the second ferrite layer with second electrode groove.
(8) fill silver paste in second electrode groove, through 70 DEG C dry 3.5 minutes, formed second electrode, and second electrode with Electrical connector electrically connects.
(9) the second ferrite substrate is laminated on the second ferrite layer, and the second ferrite substrate covers the second ferrite Layer and second electrode, obtain semi-finished product.
(10) by semi-finished product from room temperature 2 hours to 230 DEG C, then heat up 2 hours to 280 DEG C, continue heating and arrive for 6 hours 880 DEG C, and after 880 DEG C are incubated 5 hours, natural cooling, then made through applying the processes such as silver, silver ink firing, termination processing, sorting braid Into chip inductor.
The D.C. resistance of the chip inductor of the present embodiment is tested using HP4338B milliohmmeters；It is inclined using TS2828 direct currents Put tester test the present embodiment chip inductor the chip inductor that the present embodiment is flowed through when being reduced to 50% electric current； The rated current of the chip inductor of the present embodiment is tested according to GJB1864A-2011.Wherein, the chip inductor of the present embodiment The electric current of D.C. resistance, rated current and the inductance value chip inductor that flows through the present embodiment when being reduced to 50% be shown in Table 1.
Embodiment 2
The preparation process of the chip inductor of the present embodiment is as follows：
The preparation of (1) first ferrite substrate and the second ferrite substrate：Soft magnetic ferrite powder is dried 6 in 150 DEG C Hour, then by dried soft magnetic ferrite powder, n-propyl acetate, isobutanol, plasticizer, binding agent and dispersant system It is standby into soft magnetic ferrite slurry, wherein, the mass ratio of n-propyl acetate and soft magnetic ferrite powder is 75:100, isobutanol with it is soft The mass ratio of magnetic ferrites powder is 20:100, plasticizer is model DOP dioctyl phthalate, plasticizer and soft magnetism The mass ratio of ferrite powder is 2.5:100, binding agent be model B44 plexiglass, binding agent with The mass ratio of soft magnetic ferrite powder is 25:100, dispersant be model X-100 Triton X-100, dispersant Mass ratio with soft magnetic ferrite powder is 1.5:100.Again by after soft magnetic ferrite slurry flow casting molding, 3.5 are dried through 75 DEG C Minute, the first ferrite substrate and the second ferrite substrate are formed respectively.The thickness of first ferrite substrate is 300 microns, the The thickness of two ferrite substrates is 300 microns.
The preparation of (2) first ferrite layers：The silk-screen printing plasticity ferrite slurry on the first ferrite substrate, through 60 DEG C dry 3.5 minutes, is formed thickness for 40 microns, with first electrode groove the first ferrite layer.
(3) silver paste is filled in first electrode groove, is dried 3.5 minutes through 70 DEG C, the first electricity is formed in first electrode groove Pole.
(4) the silk-screen printing silver paste in the first electrode of part, dried 3.5 minutes through 70 DEG C, obtain electrical connector.
(5) soft magnetic ferrite powder is dried 6 hours in 150 DEG C, then by dried soft magnetic ferrite powder, acetic acid just Propyl ester, isobutanol, plasticizer, binding agent and dispersant are prepared into ferrite slurry, wherein, n-propyl acetate and soft magnet The mass ratio of oxysome powder is 75:100, the mass ratio of isobutanol and soft magnetic ferrite powder is 20:100, plasticizer is model For DOP dioctyl phthalate, the mass ratio of plasticizer and soft magnetic ferrite powder is 2.5:100, binding agent is model For B44 plexiglass, the mass ratio of binding agent and soft magnetic ferrite powder is 25:100, dispersant is type Number Triton X-100 for being X-100, the mass ratio of dispersant and soft magnetic ferrite powder is 1.5:100.Then, exist Ferrite slurry is coated on first ferrite layer, and ferrite slurry is covered the first ferrite layer and first electrode, and makes electricity Connector exposes, and is dried 3.5 minutes through 75 DEG C, forms media coating, and electrical connector is arranged in media coating, the first ferrite Layer, first electrode, electrical connector and media coating collectively constitute inductance unit.The thickness of media coating is 30 microns.
(6) the non magnetic cut-off slurry of silk-screen printing on media coating, through 65 DEG C dry 3.5 minutes, formed it is non magnetic every Tomography, non magnetic insulating course covers media coating, and electrical connector is arranged in non magnetic insulating course.Wherein, non magnetic cut-off slurry Material includes ferrite powder, bismuth oxide, n-propyl acetate, isobutanol, plasticizer and binding agent, and the magnetic conductivity of ferrite powder is The mass ratio of 5 Henry/rice, bismuth oxide and ferrite powder is 10:100, the mass ratio of n-propyl acetate and ferrite powder is 60:100, the mass ratio of isobutanol and ferrite powder is 8:100, plasticizer is dioctyl phthalate, plasticizer and iron The mass ratio of oxysome powder is 6:100, binding agent is polyvinyl butyral fat, and the mass ratio of binding agent and ferrite powder is 10:100.The thickness of non magnetic insulating course is 10 microns.
(7) the silk-screen printing plasticity ferrite slurry on non magnetic insulating course, dry 3.5 minutes, formed thick through 60 DEG C Spend for 40 microns, the second ferrite layer with second electrode groove.
(8) fill silver paste in second electrode groove, through 70 DEG C dry 3.5 minutes, formed second electrode, and second electrode with Electrical connector electrically connects.
(9) the second ferrite substrate is laminated on the second ferrite layer, and the second ferrite substrate covers the second ferrite Layer and second electrode, obtain semi-finished product.
(10) by semi-finished product from room temperature 2 hours to 230 DEG C, then heat up 2 hours to 280 DEG C, continue heating and arrive for 6 hours 880 DEG C, and after 880 DEG C are incubated 6 hours, natural cooling, then made through applying the processes such as silver, silver ink firing, termination processing, sorting braid Into chip inductor.
Using the identical method of testing of embodiment 1, D.C. resistance, the rated current of the chip inductor of the present embodiment are obtained And the electric current of the inductance value chip inductor that flows through the present embodiment when being reduced to 50% is shown in Table 1.
Embodiment 3
The preparation process of the chip inductor of the present embodiment is as follows：
The preparation of (1) first ferrite substrate and the second ferrite substrate：Soft magnetic ferrite powder is dried 12 in 100 DEG C Hour, then by dried soft magnetic ferrite powder, n-propyl acetate, isobutanol, plasticizer, binding agent and dispersant system It is standby into soft magnetic ferrite slurry, wherein, the mass ratio of n-propyl acetate and soft magnetic ferrite powder is 85:100, isobutanol with it is soft The mass ratio of magnetic ferrites powder is 15:100, plasticizer is model DOP dioctyl phthalate, plasticizer and soft magnetism The mass ratio of ferrite powder is 1.5:100, binding agent is the mixed of model B44 and A21 plexiglass The mass ratio of compound, binding agent and soft magnetic ferrite powder is 1:100, dispersant is model X-100 polyethylene glycol octyl group The mass ratio of phenyl ether, dispersant and soft magnetic ferrite powder is 1:100.Again by soft magnetic ferrite slurry after flow casting molding, Dried 3.5 minutes through 75 DEG C, form the first ferrite substrate and the second ferrite substrate respectively.The thickness of first ferrite substrate For 100 microns, the thickness of the second ferrite substrate is 100 microns.
The preparation of (2) first ferrite layers：The silk-screen printing plasticity ferrite slurry on the first ferrite substrate, through 60 DEG C dry 3.5 minutes, is formed thickness for 60 microns, with first electrode groove the first ferrite layer.
(3) silver paste is filled in first electrode groove, is dried 3.5 minutes through 70 DEG C, the first electricity is formed in first electrode groove Pole.
(4) the silk-screen printing silver paste in the first electrode of part, dried 3.5 minutes through 70 DEG C, obtain electrical connector.
(5) soft magnetic ferrite powder is dried 12 hours in 100 DEG C, then by dried soft magnetic ferrite powder, acetic acid N-propyl, isobutanol, plasticizer, binding agent and dispersant are prepared into ferrite slurry, wherein, n-propyl acetate and soft magnetism The mass ratio of ferrite powder is 85:100, the mass ratio of isobutanol and soft magnetic ferrite powder is 15:100, plasticizer is type Number dioctyl phthalate for being DOP, the mass ratio of plasticizer and soft magnetic ferrite powder is 1.5:100, binding agent is type Number for B44 and A21 plexiglass mixture, the mass ratio of binding agent and soft magnetic ferrite powder is 1: 100, dispersant is model X-100 Triton X-100, and the mass ratio of dispersant and soft magnetic ferrite powder is 1:100.Then, ferrite slurry is coated on the first ferrite layer, and ferrite slurry is covered the first ferrite layer and the One electrode, and expose electrical connector, dried 3.5 minutes through 75 DEG C, form media coating, electrical connector is arranged in deielectric-coating Layer, the first ferrite layer, first electrode, electrical connector and media coating collectively constitute inductance unit.The thickness of media coating is 50 microns.
(6) the non magnetic cut-off slurry of silk-screen printing on media coating, through 65 DEG C dry 3.5 minutes, formed it is non magnetic every Tomography, non magnetic insulating course covers media coating, and electrical connector is arranged in non magnetic insulating course.Wherein, non magnetic cut-off slurry Material includes ferrite powder, bismuth oxide, n-propyl acetate, isobutanol, plasticizer and binding agent, and the magnetic conductivity of ferrite powder is The mass ratio of 15 Henry/rice, bismuth oxide and ferrite powder is 12:100, the mass ratio of n-propyl acetate and ferrite powder is 50:100, the mass ratio of isobutanol and ferrite powder is 15:100, plasticizer is dioctyl phthalate, plasticizer and iron The mass ratio of oxysome powder is 5:100, binding agent is polyvinyl butyral fat, and the mass ratio of binding agent and ferrite powder is 8: 100.The thickness of non magnetic insulating course is 20 microns.
(7) the silk-screen printing plasticity ferrite slurry on non magnetic insulating course, dry 3.5 minutes, formed thick through 60 DEG C Spend for 60 microns, the second ferrite layer with second electrode groove.
(8) fill silver paste in second electrode groove, through 70 DEG C dry 3.5 minutes, formed second electrode, and second electrode with Electrical connector electrically connects.
(9) the second ferrite substrate is laminated on the second ferrite layer, and the second ferrite substrate covers the second ferrite Layer and second electrode, obtain semi-finished product.
(10) by semi-finished product from room temperature 2 hours to 230 DEG C, then heat up 2 hours to 280 DEG C, continue heating and arrive for 6 hours 880 DEG C, and after 880 DEG C are incubated 4 hours, natural cooling, then made through applying the processes such as silver, silver ink firing, termination processing, sorting braid Into chip inductor.
Using the identical method of testing of embodiment 1, D.C. resistance, the rated current of the chip inductor of the present embodiment are obtained And the electric current of the inductance value chip inductor that flows through the present embodiment when being reduced to 50% is shown in Table 1.
Embodiment 4
The preparation process of the chip inductor of the present embodiment is as follows：
The preparation of (1) first ferrite substrate and the second ferrite substrate：Soft magnetic ferrite powder is dried 9 in 130 DEG C Hour, then by dried soft magnetic ferrite powder, n-propyl acetate, isobutanol, plasticizer, binding agent and dispersant system It is standby into soft magnetic ferrite slurry, wherein, the mass ratio of n-propyl acetate and soft magnetic ferrite powder is 80:100, isobutanol with it is soft The mass ratio of magnetic ferrites powder is 15:100, plasticizer is model DOP dioctyl phthalate, plasticizer and soft magnetism The mass ratio of ferrite powder is 2:100, binding agent is the mixing of model B44 and A21 plexiglass The mass ratio of thing, binding agent and soft magnetic ferrite powder is 1.5:100, dispersant is model X-100 polyethylene glycol octyl group The mass ratio of phenyl ether, dispersant and soft magnetic ferrite powder is 1.2:100.Again by soft magnetic ferrite slurry through flow casting molding Afterwards, dried 3.5 minutes through 75 DEG C, form the first ferrite substrate and the second ferrite substrate respectively.First ferrite substrate For thickness at 200 microns, the thickness of the second ferrite substrate is 200 microns.
The preparation of (2) first ferrite layers：The silk-screen printing plasticity ferrite slurry on the first ferrite substrate, through 60 DEG C dry 3.5 minutes, is formed thickness for 50 microns, with first electrode groove the first ferrite layer.
(3) silver paste is filled in first electrode groove, is dried 3.5 minutes through 70 DEG C, the first electricity is formed in first electrode groove Pole.
(4) the silk-screen printing silver paste in the first electrode of part, dried 3.5 minutes through 70 DEG C, obtain electrical connector.
(5) soft magnetic ferrite powder is dried 9 hours in 130 DEG C, then by dried soft magnetic ferrite powder, acetic acid just Propyl ester, isobutanol, plasticizer, binding agent and dispersant are prepared into ferrite slurry, wherein, n-propyl acetate and soft magnet The mass ratio of oxysome powder is 80:100, the mass ratio of isobutanol and soft magnetic ferrite powder is 15:100, plasticizer is model For DOP dioctyl phthalate, the mass ratio of plasticizer and soft magnetic ferrite powder is 2:100, binding agent is model The mass ratio of the mixture of B44 and A21 plexiglass, binding agent and soft magnetic ferrite powder is 1.5: 100, dispersant is model X-100 Triton X-100, and the mass ratio of dispersant and soft magnetic ferrite powder is 1.2:100.Then, on the first ferrite layer coat ferrite slurry, and make ferrite slurry cover the first ferrite layer and First electrode, and expose electrical connector, dried 3.5 minutes through 75 DEG C, form media coating, electrical connector is arranged in deielectric-coating Layer, the first ferrite layer, first electrode, electrical connector and media coating collectively constitute inductance unit.The thickness of media coating is 40 microns.
(6) the non magnetic cut-off slurry of silk-screen printing on the media coating of first inductance unit, 3.5 points are dried through 65 DEG C Clock, non magnetic insulating course is formed, non magnetic insulating course covers media coating, and electrical connector is arranged in non magnetic insulating course.Its In, non magnetic cut-off slurry includes ferrite powder, bismuth oxide, n-propyl acetate, isobutanol, plasticizer and binding agent, iron oxygen The magnetic conductivity of body powder is 10 Henry/rice, and the mass ratio of bismuth oxide and ferrite powder is 11:100, n-propyl acetate and iron oxygen The mass ratio of body powder is 55:100, the mass ratio of isobutanol and ferrite powder is 10:100, plasticizer is phthalic acid The mass ratio of dioctyl ester, plasticizer and ferrite powder is 5:100, binding agent is polyvinyl butyral fat, binding agent and iron oxygen The mass ratio of body powder is 9:100.The thickness of non magnetic insulating course is 15 microns.
(7) the silk-screen printing plasticity ferrite slurry on non magnetic insulating course, dry 3.5 minutes, formed thick through 60 DEG C Spend for 50 microns, there is the first ferrite layer of second electrode groove, and repeat step (3)~(5), the shape on non magnetic insulating course Into second inductance unit.
(8) the silk-screen printing plasticity ferrite slurry on the media coating of second inductance unit, 3.5 are dried through 60 DEG C Minute, thickness is formed as 40~60 microns, the second ferrite layer with second electrode groove.
(9) fill silver paste in second electrode groove, through 70 DEG C dry 3.5 minutes, formed second electrode, and second electrode with Electrical connector electrically connects.
(10) the second ferrite substrate is laminated on the second ferrite layer, and the second ferrite substrate covers the second ferrite Layer and second electrode, obtain semi-finished product.
(11) by semi-finished product from room temperature 2 hours to 230 DEG C, then heat up 2 hours to 280 DEG C, continue heating and arrive for 6 hours 880 DEG C, and after 880 DEG C are incubated 5 hours, natural cooling, then made through applying the processes such as silver, silver ink firing, termination processing, sorting braid Into chip inductor.
Using the identical method of testing of embodiment 1, D.C. resistance, the rated current of the chip inductor of the present embodiment are obtained And the electric current of the inductance value chip inductor that flows through the present embodiment when being reduced to 50% is shown in Table 1.
Embodiment 5
The preparation process of the chip inductor of the present embodiment is as follows：
The preparation of (1) first ferrite substrate and the second ferrite substrate：Soft magnetic ferrite powder is dried 9 in 130 DEG C Hour, then by dried soft magnetic ferrite powder, n-propyl acetate, isobutanol, plasticizer, binding agent and dispersant system It is standby into soft magnetic ferrite slurry, wherein, the mass ratio of n-propyl acetate and soft magnetic ferrite powder is 80:100, isobutanol with it is soft The mass ratio of magnetic ferrites powder is 18:100, plasticizer is model DOP dioctyl phthalate, plasticizer and soft magnetism The mass ratio of ferrite powder is 2:100, binding agent is the mixing of model B44 and A21 plexiglass The mass ratio of thing, binding agent and soft magnetic ferrite powder is 1.2:100, dispersant is model X-100 polyethylene glycol octyl group The mass ratio of phenyl ether, dispersant and soft magnetic ferrite powder is 1.2:100.Again by soft magnetic ferrite slurry through flow casting molding Afterwards, dried 3.5 minutes through 75 DEG C, form the first ferrite substrate and the second ferrite substrate respectively.First ferrite substrate For thickness at 100 microns, the thickness of the second ferrite substrate is 100 microns.
The preparation of (2) first ferrite layers：The silk-screen printing plasticity ferrite slurry on the first ferrite substrate, through 60 DEG C dry 3.5 minutes, is formed thickness for 50 microns, with first electrode groove the first ferrite layer.
(3) silver paste is filled in first electrode groove, is dried 3.5 minutes through 70 DEG C, the first electricity is formed in first electrode groove Pole.
(4) the silk-screen printing silver paste in the first electrode of part, dried 3.5 minutes through 70 DEG C, obtain electrical connector.
(5) soft magnetic ferrite powder is dried 9 hours in 130 DEG C, then by dried soft magnetic ferrite powder, acetic acid just Propyl ester, isobutanol, plasticizer, binding agent and dispersant are prepared into ferrite slurry, wherein, n-propyl acetate and soft magnet The mass ratio of oxysome powder is 80:100, the mass ratio of isobutanol and soft magnetic ferrite powder is 18:100, plasticizer is model For DOP dioctyl phthalate, the mass ratio of plasticizer and soft magnetic ferrite powder is 2:100, binding agent is model The mass ratio of the mixture of B44 and A21 plexiglass, binding agent and soft magnetic ferrite powder is 1.2: 100, dispersant is model X-100 Triton X-100, and the mass ratio of dispersant and soft magnetic ferrite powder is 1.2:100.Then, on the first ferrite layer coat ferrite slurry, and make ferrite slurry cover the first ferrite layer and First electrode, and expose electrical connector, dried 3.5 minutes through 75 DEG C, form media coating, electrical connector is arranged in deielectric-coating Layer, the first ferrite layer, first electrode, electrical connector and media coating collectively constitute inductance unit.The thickness of media coating is 40 microns.
(6) the non magnetic cut-off slurry of silk-screen printing on the media coating of first inductance unit, 3.5 points are dried through 65 DEG C Clock, first non magnetic insulating course, first non magnetic insulating course masking media coating are formed, and electrical connector is arranged in first Individual non magnetic insulating course.Wherein, first non magnetic cut-off slurry includes ferrite powder, bismuth oxide, n-propyl acetate, isobutyl Alcohol, plasticizer and binding agent, the magnetic conductivity of ferrite powder are 10 Henry/rice, and the mass ratio of bismuth oxide and ferrite powder is 12:100, the mass ratio of n-propyl acetate and ferrite powder is 60:100, the mass ratio of isobutanol and ferrite powder is 13: 100, plasticizer is dioctyl phthalate, and the mass ratio of plasticizer and ferrite powder is 5:100, binding agent is polyethylene The mass ratio of butyral fat, binding agent and ferrite powder is 10:100.The thickness of first non magnetic insulating course is 15 microns.
(7) the silk-screen printing plasticity ferrite slurry on non magnetic insulating course, dry 3.5 minutes, formed thick through 60 DEG C Spend for 50 microns, there is the first ferrite layer of second electrode groove, and repeat step (3)~(5), the shape on non magnetic insulating course Into second inductance unit.
(8) repeat step (6) forms second non magnetic insulating course on the media coating of second inductance unit.
(9) the silk-screen printing plasticity ferrite slurry on second non magnetic insulating course, dried 3.5 minutes through 60 DEG C, Thickness is formed as 50 microns, the second ferrite layer with second electrode groove.
(10) silver paste is filled in second electrode groove, is dried 3.5 minutes through 70 DEG C, form second electrode, and second electrode Electrically connected with electrical connector.
(11) the second ferrite substrate is laminated on the second ferrite layer, and the second ferrite substrate covers the second ferrite Layer and second electrode, obtain semi-finished product.
(12) by semi-finished product from room temperature 2 hours to 230 DEG C, then heat up 2 hours to 280 DEG C, continue heating and arrive for 6 hours 880 DEG C, and after 880 DEG C are incubated 5 hours, natural cooling, then made through applying the processes such as silver, silver ink firing, termination processing, sorting braid Into chip inductor.
Using the identical method of testing of embodiment 1, D.C. resistance, the rated current of the chip inductor of the present embodiment are obtained And the electric current of the inductance value chip inductor that flows through the present embodiment when being reduced to 50% is shown in Table 1.
Comparative example 1
The preparation process of the chip inductor of comparative example 1 is as follows：
The micron thickness of thickness 100 being prepared using ordinary ferrite slurry (such as the SB materials magnetic conductivity 80 that Changping provides) curtain coating First ferrite substrate and thickness are 100 microns of the second ferrite substrate, using silver paste on the first ferrite substrate silk screen Print first electrode, the silk-screen printing electrical connector in the first electrode of part；Curtain coating prepares deielectric-coating；In the second ferrite substrate Upper silk-screen printing second electrode, the silk-screen printing electrical connector on partial second electrode, the first iron of first electrode will be thought of as Ferrite substrate, deielectric-coating and the second ferrite substrate stacking formed with second electrode, obtain semi-finished product, by semi-finished product from room temperature Heating 2 hours to 230 DEG C, then heat up 2 hours to 280 DEG C, continue heating 6 hours to 880 DEG C, and 5 hours are incubated at 880 DEG C Afterwards, natural cooling, then it is fabricated to chip through applying the processes such as silver, silver ink firing, termination processing, sorting braid (being existing maturation process) Inductor.
Using the identical method of testing of embodiment 1, D.C. resistance, the rated current of the chip inductor of comparative example 1 are obtained And the electric current of the inductance value chip inductor that flows through comparative example 1 when being reduced to 50% is shown in Table 1.
Comparative example 2
The preparation process of the chip inductor of the present embodiment is as follows：
The preparation of (1) first ferrite substrate and the second ferrite substrate：Soft magnetic ferrite powder is dried 9 in 130 DEG C Hour, then by dried soft magnetic ferrite powder, n-propyl acetate, isobutanol, plasticizer, binding agent and dispersant system It is standby into soft magnetic ferrite slurry, wherein, the mass ratio of n-propyl acetate and soft magnetic ferrite powder is 80:100, isobutanol with it is soft The mass ratio of magnetic ferrites powder is 18:100, plasticizer is model DOP dioctyl phthalate, plasticizer and soft magnetism The mass ratio of ferrite powder is 2:100, binding agent be model B44 plexiglass, binding agent with it is soft The mass ratio of magnetic ferrites powder is 20:100, dispersant be model X-100 Triton X-100, dispersant with The mass ratio of soft magnetic ferrite powder is 1:100.Again by soft magnetic ferrite slurry after flow casting molding, 3.5 points are dried through 75 DEG C Clock, the first ferrite substrate and the second ferrite substrate are formed respectively.The thickness of first ferrite substrate is at 100 microns, second The thickness of ferrite substrate is 100 microns.
The preparation of (2) first ferrite layers：The silk-screen printing plasticity ferrite slurry on the first ferrite substrate, through 60 DEG C dry 3.5 minutes, is formed thickness for 50 microns, with first electrode groove the first ferrite layer.
(3) silver paste is filled in first electrode groove, is dried 3.5 minutes through 70 DEG C, the first electricity is formed in first electrode groove Pole.
(4) the silk-screen printing silver paste in the first electrode of part, dried 3.5 minutes through 70 DEG C, obtain electrical connector.
(5) soft magnetic ferrite powder is dried 9 hours in 130 DEG C, then by dried soft magnetic ferrite powder, acetic acid just Propyl ester, isobutanol, plasticizer, binding agent and dispersant are prepared into ferrite slurry, wherein, n-propyl acetate and soft magnet The mass ratio of oxysome powder is 80:100, the mass ratio of isobutanol and soft magnetic ferrite powder is 18:100, plasticizer is model For DOP dioctyl phthalate, the mass ratio of plasticizer and soft magnetic ferrite powder is 2:100, binding agent is model The mass ratio of B44 plexiglass, binding agent and soft magnetic ferrite powder is 20:100, dispersant is model For X-100 Triton X-100, the mass ratio of dispersant and soft magnetic ferrite powder is 1:100.Then, first Ferrite slurry is coated on ferrite layer, and ferrite slurry is covered the first ferrite layer and first electrode, and makes electrical connection Part exposes, and is dried 3.5 minutes through 75 DEG C, forms media coating, and electrical connector is arranged in media coating, the first ferrite layer, the One electrode, electrical connector and media coating collectively constitute inductance unit.The thickness of media coating is 40 microns.
(6) the silk-screen printing plasticity ferrite slurry on media coating, dried 3.5 minutes through 60 DEG C, forming thickness is 50 microns, the second ferrite layer with second electrode groove.
(7) fill silver paste in second electrode groove, through 70 DEG C dry 3.5 minutes, formed second electrode, and second electrode with Electrical connector electrically connects.
(8) the second ferrite substrate is laminated on the second ferrite layer, and the second ferrite substrate covers the second ferrite Layer and second electrode, obtain semi-finished product.
(9) by semi-finished product from room temperature 2 hours to 230 DEG C, then heat up 2 hours to 280 DEG C, continue heating and arrive for 6 hours 880 DEG C, and after 880 DEG C are incubated 5 hours, natural cooling, then made through applying the processes such as silver, silver ink firing, termination processing, sorting braid Into chip inductor.
Using the identical method of testing of embodiment 1, D.C. resistance, the rated current of the chip inductor of comparative example 2 are obtained And the electric current of the inductance value chip inductor that flows through comparative example 2 when being reduced to 50% is shown in Table 1.
What table 1 represented be the D.C. resistance of chip inductor of embodiment 1~5 and comparative example 1~2, rated current and Inductance value is reduced to the electric current of the chip inductor flowed through when 50%.
Table 1
From table 1 it follows that the D.C. resistance of the chip inductor of embodiment 1~5 is up to 35m Ω, inductance value drop It is low to 50% when flow through the electric current of product and rated current is at least 100mA and 800mA, and the chip inductor of comparative example 1 respectively The inductance value of device flows through product electric current when being reduced to 50% is only 100mA, and rated current is only 50mA, and D.C. resistance is up to 200m Ω, the inductance value of the chip inductor of comparative example 2 flows through product electric current when being reduced to 50% are only 100mA, specified electricity Stream be only 50mA, it is clear that the chip inductor of embodiment 1~5 have relatively low D.C. resistance, relatively low magnetic saturation intensity and compared with Big rated current, and amplitude reduction is reduced with the increase inductance value of electric current, improve the DC superposition characteristic of chip inductor And reliability.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited In contradiction, the scope that this specification is recorded all is considered to be.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously Can not therefore it be construed as limiting the scope of the patent.It should be pointed out that come for one of ordinary skill in the art Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.

Claims (8)

1. a kind of preparation method of chip inductor, it is characterised in that comprise the following steps：
First ferrite substrate is provided, the first ferrite with first electrode groove is formed on first ferrite substrate Layer, and form first electrode in the first electrode groove；
Electrical connector is formed on the first electrode；
Media coating, and media coating masking described first are formed on first ferrite layer using ferrite slurry Ferrite layer and the first electrode, the electrical connector are arranged in the media coating, wherein, first ferrite layer, The first electrode, the electrical connector and the media coating collectively constitute inductance unit；
Non magnetic insulating course, the non magnetic insulating course shelter are formed on the media coating using non magnetic cut-off slurry Media coating is stated, and the electrical connector is arranged in the non magnetic insulating course, wherein, the non magnetic cut-off slurry includes iron Oxysome powder, bismuth oxide, n-propyl acetate, isobutanol, plasticizer and binding agent, the magnetic conductivity of the ferrite powder for 5~ The mass ratio of 15 Henry/rice, the bismuth oxide and the ferrite powder is 10~12:100, the n-propyl acetate with it is described The mass ratio of ferrite powder is 50~60:100, the mass ratio of the isobutanol and the ferrite powder is 8~15:100；
The second ferrite layer with second electrode groove is formed on the non magnetic insulating course, and in the second electrode groove Second electrode is formed, and the second electrode electrically connects with the electrical connector；
Second ferrite substrate is provided, second ferrite substrate, and described second are laminated on second ferrite layer Ferrite substrate covers second ferrite layer and the second electrode, obtains semi-finished product；And
The semi-finished product are sintered, obtain chip inductor；
It is specially form the media coating on first ferrite layer the step of using the ferrite slurry：Described The ferrite slurry is coated on first ferrite layer, and the ferrite slurry is covered first ferrite layer and described First electrode, and expose the electrical connector, through drying, form the media coating；
Wherein, the ferrite slurry includes soft magnetic ferrite powder, n-propyl acetate, isobutanol, plasticizer, binding agent and divided Powder, wherein, the mass ratio of the n-propyl acetate and the soft magnetic ferrite powder is 75~85:100, the isobutanol with The mass ratio of the soft magnetic ferrite powder is 15~20:100；
Also include being repeated several times preparing first ferrite layer, the first electrode, the electrical connector and the deielectric-coating The step of layer, so as to multiple inductance units stacked gradually are formed on first ferrite substrate, and two neighboring institute State in inductance unit, the first ferrite layer of an inductance unit is set close to the media coating of inductance unit another described Put, wherein, the non magnetic insulating course is formed on the media coating of at least one inductance unit.
2. the preparation method of chip inductor according to claim 1, it is characterised in that also including first ferrite The preparation process of substrate and second ferrite substrate：It will be dried after soft magnetic ferrite slurry flow casting molding, form institute respectively State the first ferrite substrate and second ferrite substrate；
Wherein, the soft magnetic ferrite slurry includes soft magnetic ferrite powder, n-propyl acetate, isobutanol, plasticizer, binding agent And dispersant, the mass ratio of the n-propyl acetate and the soft magnetic ferrite powder is 75~85:100, the isobutanol with The mass ratio of the soft magnetic ferrite powder is 15~20:100.
3. the preparation method of chip inductor according to claim 1, it is characterised in that the shape in the first electrode groove It is specially into the step of first electrode：Silver paste is filled in the first electrode groove, forms first electricity after drying Pole；
The step of forming the second electrode in the second electrode groove be specially：In the second electrode groove described in filling Silver paste, the second electrode is formed after drying.
4. the preparation method of chip inductor according to claim 1, it is characterised in that formed on the first electrode The step of electrical connector is specially：The silk-screen printing silver paste in the first electrode of part, through drying, obtain described be electrically connected Fitting.
5. the preparation method of chip inductor according to claim 1, it is characterised in that use the non magnetic cut-off slurry The method that material forms the non magnetic insulating course on the media coating is silk-screen printing.
6. the preparation method of chip inductor according to claim 1, it is characterised in that the thickness of the non magnetic insulating course Spend for 10~20 microns.
7. the chip inductor that a kind of preparation method of chip inductor as described in claim 1~6 any one is prepared Device.
8. application of the chip inductor as claimed in claim 7 in electronic product.
CN201610006245.4A 2016-01-06 2016-01-06 Chip inductor and its preparation method and application Expired - Fee Related CN105428002B (en)

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CN104966601A (en) * 2014-03-26 2015-10-07 莱尔德电子材料(深圳)有限公司 Nonmagnetic ferrite dielectric for common mode choke
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