CN105405911A - 基于片上模式变换器的硅锗光电探测装置 - Google Patents

基于片上模式变换器的硅锗光电探测装置 Download PDF

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CN105405911A
CN105405911A CN201510937427.9A CN201510937427A CN105405911A CN 105405911 A CN105405911 A CN 105405911A CN 201510937427 A CN201510937427 A CN 201510937427A CN 105405911 A CN105405911 A CN 105405911A
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silicon
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CN105405911B (zh
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王磊
肖希
陈代高
李淼峰
邱英
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Wuhan Research Institute of Posts and Telecommunications Co Ltd
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Abstract

本发明公开了一种基于片上模式变换器的硅锗光电探测装置，涉及光通信器件领域。该装置包括绝缘衬底、光耦合器、片上模式变换器、多模硅锗光电探测器，光耦合器、片上模式变换器、多模硅锗光电探测器顺次相连，且均固定在绝缘衬底的硅晶圆上，入射的基模光信号通过单模光纤传输至光耦合器，经光耦合器耦合后的基模光信号进入片上模式变换器，片上模式变换器将基模光信号转换为多模光场，多模光场进入多模硅锗光电探测器，多模硅锗光电探测器将多模光场转化为电信号。本发明中的锗重掺区位于多模光场分布光强较弱的区域，锗重掺区和锗通孔对光场的吸收损耗明显降低，能够有效提高硅锗光电探测装置的响应度。

Description

基于片上模式变换器的硅锗光电探测装置
技术领域
本发明涉及光通信器件领域，具体是涉及一种基于片上模式变换器的硅锗光电探测装置。
背景技术
光电探测器是光通信系统中的重要器件。近年来，硅基光子技术快速发展，CMOS(ComplementaryMetalOxideSemiconductor，互补金属氧化物半导体)工艺兼容的硅锗光电探测器能与其他硅基光子器件单片集成，将得到广泛的应用。然而，光场除了被锗吸收产生电信号，还有一部分被锗重掺区和通孔所吸收，产生额外损耗，降低了硅锗光电探测器的响应度。
发明内容
本发明的目的是为了克服上述背景技术的不足，提供一种基于片上模式变换器的硅锗光电探测装置，该装置中的锗重掺区位于多模光场分布光强较弱的区域，锗重掺区和锗通孔对光场的吸收损耗明显降低，能够有效提高硅锗光电探测装置的响应度。
本发明提供一种基于片上模式变换器的硅锗光电探测装置，该装置包括绝缘衬底、光耦合器、片上模式变换器、多模硅锗光电探测器，光耦合器、片上模式变换器、多模硅锗光电探测器顺次相连，且均固定在绝缘衬底的硅晶圆上，入射的基模光信号通过单模光纤传输至光耦合器，经光耦合器耦合后的基模光信号进入片上模式变换器，片上模式变换器将基模光信号转换为多模光场，多模光场进入多模硅锗光电探测器，多模硅锗光电探测器将多模光场转化为电信号。
在上述技术方案的基础上，所述多模硅锗光电探测器包括硅衬底层，硅衬底层上覆盖有二氧化硅层，二氧化硅层上分布有第一硅重掺区、硅轻掺区、第二硅重掺区，第一硅重掺区、第二硅重掺区分别位于硅轻掺区的两侧，硅轻掺区上生长有多模锗吸收波导，多模锗吸收波导的内部顶端有至少一个锗重掺区，多模锗吸收波导的周围覆盖有二氧化硅层，该二氧化硅层上设置有第一硅电极、锗电极、第二硅电极，第一硅电极位于第一硅重掺区的正上方，第二硅电极位于第二硅重掺区的正上方，锗电极位于锗重掺区的正上方，第一硅电极与第一硅重掺区之间的二氧化硅层开有第一硅通孔，锗电极与至少一个锗重掺区的之间的二氧化硅层开有至少一个锗通孔，锗通孔与锗重掺区一一对应，第二硅电极与第二硅重掺区之间的二氧化硅层开有第二硅通孔，第一硅通孔、锗通孔、第二硅通孔的内部均填充有用作导体的金属，第一硅电极通过第一硅通孔内的金属导体实现与第一硅重掺区电连接，锗电极通过锗通孔内的金属导体实现与锗重掺区电连接，第二硅电极通过第二硅通孔内的金属导体实现与第二硅重掺区电连接。
在上述技术方案的基础上，所述多模光场由若干横向分布的圆形光斑组成，每个圆形光斑圆心处的光强最强，光强从圆心向周围逐渐衰减，锗重掺区位于多模光场分布中光强较弱的区域。
在上述技术方案的基础上，所述锗重掺区覆盖之处的光强小于多模光场中光强最强处的15％。
在上述技术方案的基础上，所述多模光场为1阶模时，多模锗吸收波导的内部顶端只有一个锗重掺区，锗电极与锗重掺区之间只有一个锗通孔，多模光场的光场分布为2个圆形光斑，每个圆形光斑中心处的光强最强，光强从圆心向周围逐渐衰减，锗重掺区位于两个圆形光斑外轮廓线相接触的边缘，距离两个圆形光斑的圆心较远，锗重掺区覆盖之处的光强很弱，锗重掺区和锗通孔对光场造成的吸收损耗明显减少，能有效提高硅锗光电探测装置的响应度。
在上述技术方案的基础上，所述多模光场为2阶模时，多模锗吸收波导的内部顶端有2个锗重掺区，锗电极与锗重掺区之间有2个锗通孔，多模光场的光场分布为3个圆形光斑，每个圆形光斑中心处的光强最强，光强从圆心向周围逐渐衰减，2个锗重掺区分别位于3个圆形光斑外轮廓线两两相接触的边缘，距离3个圆形光斑的圆心较远，2个锗重掺区覆盖之处的光强都很弱，2个锗重掺区和2个锗通孔对光场造成的吸收损耗明显减少，能有效提高硅锗光电探测装置的响应度。
与现有技术相比，本发明的优点如下：
本发明中的硅锗光电探测装置包括绝缘衬底、光耦合器、片上模式变换器、多模硅锗光电探测器，光耦合器、片上模式变换器、多模硅锗光电探测器顺次相连，且均固定在绝缘衬底的硅晶圆上，入射的基模光信号通过单模光纤传输至光耦合器，经光耦合器耦合后的基模光信号进入片上模式变换器，片上模式变换器将基模光信号转换为多模光场，多模光场进入多模硅锗光电探测器，多模硅锗光电探测器在中将多模光场转化为电信号。多模硅锗光电探测器的锗重掺区位于多模光场分布光强较弱的区域，锗重掺区和锗通孔对光场的吸收损耗明显降低，能够有效提高硅锗光电探测装置的响应度。
附图说明
图1是本发明实施例中基于片上模式变换器的硅锗光电探测装置的结构框图。
图2是本发明实施例中多模硅锗光电探测器的横截面示意图。
图3是本发明实施例中多模光场为1阶模时，锗重掺区与多模光场的分布示意图。
图4是本发明实施例中多模光场为2阶模时，锗重掺区与多模光场的分布示意图。
具体实施方式
下面结合附图及具体实施例对本发明作进一步的详细描述。
参见图1所示，为了提高硅锗光电探测装置的响应度，本发明实施例提供一种基于片上模式变换器的硅锗光电探测装置，该装置包括绝缘衬底、光耦合器、片上模式变换器、多模硅锗光电探测器，光耦合器、片上模式变换器、多模硅锗光电探测器顺次相连，且均固定在绝缘衬底的硅晶圆上。入射的基模光信号通过单模光纤传输至光耦合器，经光耦合器耦合后的基模光信号进入片上模式变换器，片上模式变换器将基模光信号转换为多模光场，多模光场进入多模硅锗光电探测器，多模硅锗光电探测器将多模光场转化为电信号。
参见图2所示，多模硅锗光电探测器包括硅衬底层，硅衬底层上覆盖有二氧化硅层，二氧化硅层上分布有第一硅重掺区、硅轻掺区、第二硅重掺区，第一硅重掺区、第二硅重掺区分别位于硅轻掺区的两侧，硅轻掺区上生长有多模锗吸收波导，多模锗吸收波导的内部顶端有至少一个锗重掺区，多模锗吸收波导的周围覆盖有二氧化硅层，该二氧化硅层上设置有第一硅电极、锗电极、第二硅电极，第一硅电极位于第一硅重掺区的正上方，第二硅电极位于第二硅重掺区的正上方，锗电极位于锗重掺区的正上方，第一硅电极与第一硅重掺区之间的二氧化硅层开有第一硅通孔，锗电极与至少一个锗重掺区的之间的二氧化硅层开有至少一个锗通孔，锗通孔与锗重掺区一一对应，第二硅电极与第二硅重掺区之间的二氧化硅层开有第二硅通孔，第一硅通孔、锗通孔、第二硅通孔的内部均填充有铜、铝等金属，用作导体，第一硅电极通过第一硅通孔内的金属导体实现与第一硅重掺区电连接，锗电极通过锗通孔内的金属导体实现与锗重掺区电连接，第二硅电极通过第二硅通孔内的金属导体实现与第二硅重掺区电连接。
参见图3、图4所示，多模光场由若干横向分布的圆形光斑组成，每个圆形光斑圆心处的光强最强，光强从圆心向周围逐渐衰减，锗重掺区位于多模光场分布中光强较弱的区域，锗重掺区覆盖之处的光强小于多模光场中光强最强处的15％。
参见图3所示，多模光场为1阶模时，多模锗吸收波导的内部顶端只有一个锗重掺区，锗电极与锗重掺区之间只有一个锗通孔，多模光场的光场分布为2个圆形光斑，每个圆形光斑中心处的光强最强，光强从圆心向周围逐渐衰减，锗重掺区位于两个圆形光斑外轮廓线相接触的边缘，距离两个圆形光斑的圆心较远，锗重掺区覆盖之处的光强很弱，因此锗重掺区和锗通孔对光场造成的吸收损耗明显减少，能够有效提高硅锗光电探测装置的响应度。
参见图4所示，多模光场为2阶模时，多模锗吸收波导的内部顶端有2个锗重掺区，锗电极与锗重掺区之间有2个锗通孔，多模光场的光场分布为3个圆形光斑，每个圆形光斑中心处的光强最强，光强从圆心向周围逐渐衰减，2个锗重掺区分别位于3个圆形光斑外轮廓线两两相接触的边缘，距离3个圆形光斑的圆心较远，2个锗重掺区覆盖之处的光强都很弱，因此2个锗重掺区和2个锗通孔对光场造成的吸收损耗明显减少，能够有效提高硅锗光电探测装置的响应度。
本领域的技术人员可以对本发明实施例进行各种修改和变型，倘若这些修改和变型在本发明权利要求及其等同技术的范围之内，则这些修改和变型也在本发明的保护范围之内。
说明书中未详细描述的内容为本领域技术人员公知的现有技术。

Claims (6)

1.一种基于片上模式变换器的硅锗光电探测装置，其特征在于：该装置包括绝缘衬底、光耦合器、片上模式变换器、多模硅锗光电探测器，光耦合器、片上模式变换器、多模硅锗光电探测器顺次相连，且均固定在绝缘衬底的硅晶圆上，基模光信号通过单模光纤传输至光耦合器，经光耦合器耦合后的基模光信号进入片上模式变换器，片上模式变换器将基模光信号转换为多模光场，多模光场进入多模硅锗光电探测器，多模硅锗光电探测器将多模光场转化为电信号。
2.如权利要求1所述的基于片上模式变换器的硅锗光电探测装置，其特征在于：所述多模硅锗光电探测器包括硅衬底层，硅衬底层上覆盖有二氧化硅层，二氧化硅层上分布有第一硅重掺区、硅轻掺区、第二硅重掺区，第一硅重掺区、第二硅重掺区分别位于硅轻掺区的两侧，硅轻掺区上生长有多模锗吸收波导，多模锗吸收波导的内部顶端有至少一个锗重掺区，多模锗吸收波导的周围覆盖有二氧化硅层，该二氧化硅层上设置有第一硅电极、锗电极、第二硅电极，第一硅电极位于第一硅重掺区的正上方，第二硅电极位于第二硅重掺区的正上方，锗电极位于锗重掺区的正上方，第一硅电极与第一硅重掺区之间的二氧化硅层开有第一硅通孔，锗电极与至少一个锗重掺区的之间的二氧化硅层开有至少一个锗通孔，锗通孔与锗重掺区一一对应，第二硅电极与第二硅重掺区之间的二氧化硅层开有第二硅通孔，第一硅通孔、锗通孔、第二硅通孔的内部均填充有用作导体的金属，第一硅电极通过第一硅通孔内的金属导体实现与第一硅重掺区电连接，锗电极通过锗通孔内的金属导体实现与锗重掺区电连接，第二硅电极通过第二硅通孔内的金属导体实现与第二硅重掺区电连接。
3.如权利要求2所述的基于片上模式变换器的硅锗光电探测装置，其特征在于：所述多模锗吸收波导产生的多模光场由若干横向分布的圆形光斑组成，每个圆形光斑圆心处的光强最强，光强从圆心向周围逐渐衰减，锗重掺区位于多模光场分布中光强较弱的区域。
4.如权利要求3所述的基于片上模式变换器的硅锗光电探测装置，其特征在于：所述锗重掺区覆盖之处的光强小于多模光场中光强最强处的15％。
5.如权利要求3所述的基于片上模式变换器的硅锗光电探测装置，其特征在于：所述多模光场为1阶模时，多模锗吸收波导的内部顶端只有一个锗重掺区，锗电极与锗重掺区之间只有一个锗通孔，多模光场的光场分布为2个圆形光斑，每个圆形光斑中心处的光强最强，光强从圆心向周围逐渐衰减，锗重掺区位于两个圆形光斑外轮廓线相接触的边缘，距离两个圆形光斑的圆心较远，锗重掺区覆盖之处的光强很弱，锗重掺区和锗通孔对光场造成的吸收损耗明显减少，能有效提高硅锗光电探测装置的响应度。
6.如权利要求3所述的基于片上模式变换器的硅锗光电探测装置，其特征在于：所述多模光场为2阶模时，多模锗吸收波导的内部顶端有2个锗重掺区，锗电极与锗重掺区之间有2个锗通孔，多模光场的光场分布为3个圆形光斑，每个圆形光斑中心处的光强最强，光强从圆心向周围逐渐衰减，2个锗重掺区分别位于3个圆形光斑外轮廓线两两相接触的边缘，距离3个圆形光斑的圆心较远，2个锗重掺区覆盖之处的光强都很弱，2个锗重掺区和2个锗通孔对光场造成的吸收损耗明显减少，能有效提高硅锗光电探测装置的响应度。
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