CN105401034B - High density glomerocryst superhard material and preparation method thereof - Google Patents
High density glomerocryst superhard material and preparation method thereof Download PDFInfo
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- CN105401034B CN105401034B CN201510913761.0A CN201510913761A CN105401034B CN 105401034 B CN105401034 B CN 105401034B CN 201510913761 A CN201510913761 A CN 201510913761A CN 105401034 B CN105401034 B CN 105401034B
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- high density
- diamond
- superhard material
- boron nitride
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
- C22C1/051—Making hard metals based on borides, carbides, nitrides, oxides or silicides; Preparation of the powder mixture used as the starting material therefor
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
Abstract
The present invention relates to superhard materials to synthesize field, is specially high density glomerocryst superhard material preparation method.The present invention provides high density glomerocryst superhard material preparation method; a small amount of carbide, nitride, boride and carbonitride are added in into substantial amounts of diamond particles, cubic boron nitride particle; it is sintered under the conditions of certain temperature and pressure; form one or more ultra-thin particle adhesive layers, after particle adhesive layer is crushed with carbons material grains or hexagonal boron nitride（HBN）It is sintered again, obtains high density polycrystalline diamond or high density polycrystalline cubic boron nitride.High density glomerocryst superhard material has very high thermal stability and chemical reaction inertia, have both hardness and toughness, the pressure and temperature that need not be overused during instrument is fabricated to, the cutter or drill bit of making etc. has higher cutting speed, longer service life.
Description
Technical field
The present invention relates to superhard materials to synthesize field, is specially high density glomerocryst superhard material and preparation method thereof.
Background technology
Superhard material then refers to the material that hardness can be comparable with diamond.The superhard material used at present is mainly cube
Boron nitride and diamond, but still many superhard materials are being researched and developed, such as III such as boron carbide, twin diamond, carborundum
Compound between race and IV races.
Superhard material is primarily referred to as diamond and cubic boron nitride.Diamond（English：Diamond）It is the generation being currently known
Most hard substance in boundary, in addition the hardness of C60 may be no less than diamond, but not yet come to a conclusion.Cubic boron nitride hardness is only second to
Diamond.The hardness of both superhard materials all be far above other materials hardness, including grinding tool material corundum, carborundum and
The hard tool materials such as cutter material hard alloy, high-speed steel.Therefore, superhard material is suitable for being used for manufacturing processing other materials
Instrument especially in terms of hard material is processed, has unrivaled superiority, occupies irreplaceable critical role.Only
Because in this way, superhard material is industrially applied widely.In addition to being used for manufacture instrument, superhard material is in optics, electricity
It learns, there are some properties in terms of calorifics, be a kind of important functional material, cause the great attention of people, this respect
Performance and purposes constantly researched and developed.
Diamond, also referred to as diamond, there is two kinds of natural diamond and diamond.Diamond is known in the world at present
Most hard industrial materials, characteristics that it not only has that hardness is high, wear-resisting, thermal stability is good etc., but also with its outstanding compression strength,
The physical properties such as rate of heat dispation, transaudient rate, current impedance, corrosion protection ability, light transmission, low thermal expansion ratio, become industrial application
The rarity of irreplaceable new material, modern industry and science and technology.
Diamond is the most hard abrasive material of processing industry, the most effective heat sink material of electronics industry, the best crystalline substance of semiconductor
Piece, the wave filter of communication element most high frequency, the vibrating membrane that sound equipment is most faxed, the most stable of resist layer of parts etc., by
It is widely used in metallurgy, oil drilling, architectural engineering, mechanical processing, instrument and meter, electronics industry, aerospace and modern times
Stratosphere.
Cubic boron nitride（CBN）It is the superhard material that hardness is only second to diamond.It is not only many excellent with diamond
Good characteristic, and have higher thermal stability and the chemical inertness to iron group metal and its alloy.It is as engineering material,
It is widely used in ferrous metal and its alloy material processing industry.Meanwhile it again with its excellent calorifics, electricity, optics harmony
Etc. performances, are applied in a series of high-tech areas, become a kind of functional material with development prospect.Cubic boron nitride
Micro mist, used in accurate grinding, grinding, polishing and microstoning, to reach high-precision finished surface.Suitable for resin, metal,
The bonding agents system such as ceramics also can be used for production glomerocryst composite sheet sintered body, can be used as loose-abrasive, abrasive pastes.
CBN due to excellent Chemical Physics performance, such as have the high rigidity for being only second to diamond, high thermal stability and
Chemical inertness is widely applied, automobile, space flight and aviation, mechanical electric as manufacture field of the super hard abrasive in different industries
The indispensable important materials of the industry such as son, microelectronics, also obtain the very big attention of each industrially developed country.CBN is synthesized except quiet
Also there are many method, such as Static pressure direct translation method, dynamic impulsion method, vapour deposition process, some of which sides for high pressure membrane by accelerant process
Method such as vapour deposition process have developed rapidly.But commercial synthesis CBN main methods or Static pressure membrane by accelerant process so far, the conjunction of CBN
This respect is also focused primarily upon into research.
Diamond glomerocryst（PCD）Composite sheet is to be closed in high temperature and pressure by many fine-particle diamonds and hard
The block agglomerate that golden substrate joint sintering forms.It as PCBN have high intensity, high rigidity, high-wearing feature, particularly
With high toughness.As machining tool, PCD is mainly used for oil, metallurgy, geological drill bit, reamer etc., drilling
Speed and timeliness are the manyfold of natural diamond, while aperture can also be effectively kept in drilling process.Diamond
Composite sheet can also be used to cut nonferrous metal and its alloy, hard alloy and nonmetallic materials.Cutting speed is closed for hard
The hundreds of times of golden cutter, durability are thousands of times of hard alloy.
There are certain gaps, the presence in these gaps in sintering process, between particle to affect for superhard material particle
The performance of superhard material, particularly thermal stability, in addition, the thermal dilation difference between metallic catalyst can also influence superhard material
Microstructure, and then influence superhard material performance.
The content of the invention
In view of the above-mentioned problems, the object of the present invention is to provide high density glomerocryst superhard material and preparation method thereof, toward largely
Diamond particles, add in a small amount of carbide, nitride, boride and carbonitride in cubic boron nitride particle, certain
Temperature and pressure under the conditions of be sintered, form one or more ultra-thin particle adhesive layers, the gap between filler particles increases
Add the density of superhard material.
To achieve these goals, the present invention uses following technical scheme
A small amount of carbide, nitride, boride and carbon are added in into substantial amounts of diamond particles, cubic boron nitride particle
Nitride, and metal adhesive is added in, it is sintered, is formed ultra-thin one or more under the conditions of certain temperature and pressure
Grain adhesive layer, the average thickness of particle adhesive layer are 1 micron -100 microns, after particle adhesive layer is crushed with carbons substance
Grain or hexagonal boron nitride（HBN）It is sintered again, obtains high density polycrystalline diamond or high density polycrystalline cubic boron nitride.
High density glomerocryst superhard material, including, by weight, the diamond particles or cubic boron nitride of 70%-99%
Particle, the carbide of 0.5%-25% either nitride either boride either carbonitride or carbide, nitride, boron
Compound and carbonitride is two kinds therein, three kinds, four kinds of mixture, the metal adhesive of 0.5%-5%.
High density glomerocryst superhard material preparation method, comprises the following steps：
Step 1：Batch mixing.By weight, 0.5%- is added in the diamond particles or cubic boron nitride particle of 70%-99%
Either either carbonitride or carbide, nitride, boride and carbonitride are therein for boride for 25% nitride
Two kinds, three kinds, four kinds of mixture, and 0.5%-5% metal adhesives are added in, above-mentioned substance is mixed evenly.
Step 2：First sintering.The mixed-powder obtained in step 1 is added in reacting furnace, in temperature 700-
1900 DEG C, to be sintered for the first time under conditions of 200-800MPa and inert atmosphere, sintering time 3-20m is surpassed pressure
Thin particle adhesive layer.
Step 3：It crushes.The known technological means of particle adhesive layer is crushed.
Step 4：Secondary charging.Add in carbons material grains or hexagonal boron nitride（HBN）, and be uniformly mixed.
Step 5：Double sintering.Mixed-powder in step 4 is sent to reacting furnace, in 1700-2500 DEG C of temperature,
For pressure to carry out double sintering under conditions of 5-18GPa and inert atmosphere, sintering time 5-30m obtains high density glomerocryst gold
Hard rock or high density polycrystalline cubic boron nitride.
High density polycrystalline diamond includes substantial amounts of diamond particles, wherein being greatly cohesible, diamond
Volume be at least 70%-99%.
High density polycrystalline cubic boron nitride includes substantial amounts of cubic boron nitride, wherein being greatly cohesible, stands
The volume of square boron nitride is at least 70%-99%.
Carbonization material is graphite, vitreous carbon, graphene, any kind of fullerene, one kind in diamond-like-carbon or several
Kind.
Beneficial effects of the present invention
1st, the present invention is smaller than the single superhard material gap after once sintered, density is big.
2nd, high density glomerocryst superhard material has very high thermal stability and chemical reaction inertia.
3rd, high density glomerocryst superhard material has both hardness and toughness, need not overuse during instrument is fabricated to
Pressure and temperature.
4th, high density glomerocryst superhard material makes cutter or drill bit etc. have higher cutting speed, longer service life.
5th, high density glomerocryst superhard material has wider application field.
6th, high density glomerocryst superhard material can meet the requirement of some special workpieces processing.
Specific embodiment
A small amount of carbide, nitride, boride and carbon are added in into substantial amounts of diamond particles, cubic boron nitride particle
Nitride, and metal adhesive is added in, it is sintered, is formed ultra-thin one or more under the conditions of certain temperature and pressure
Grain adhesive layer, the average thickness of particle adhesive layer are 1 micron -100 microns, after particle adhesive layer is crushed with carbons substance
Grain or hexagonal boron nitride（HBN）It is sintered again, obtains high density polycrystalline diamond or high density polycrystalline cubic boron nitride.
With reference to embodiment, the present invention will be further described.
High density polycrystalline diamond, including, by weight, 80% diamond particles, 10% carbide, 5% nitridation
Object, 5% metal adhesive.
High density polycrystalline diamond, comprises the following steps：
Step 1：Batch mixing.By weight, 10% carbide and 5% nitride is added in 80% diamond particles,
And 5% metal adhesive is added in, above-mentioned substance is mixed evenly.
Step 2：First sintering.The mixed-powder obtained in step 1 is added in reacting furnace, in 1500 DEG C of temperature,
For pressure to be sintered for the first time under conditions of 700MPa and helium, sintering time 15m obtains ultra-thin particle adhesive layer.
Step 3：It crushes.The known technological means of particle adhesive layer that step 2 obtains is crushed.
Step 4：Secondary charging.Hexagonal boron nitride is added in 10 to 1 ratio（HBN）, and be uniformly mixed.
Step 5：Double sintering.Mixed-powder in step 4 is sent to reacting furnace, in 1900 DEG C of temperature, pressure is
Double sintering is carried out under conditions of 15GPa and helium, sintering time 20m obtains high density polycrystalline diamond.
Embodiment two：
The bortz powder that 0.75 micron of 10g particle mean sizes is placed on a reacting furnace, in 800 degrees Celsius, 10% hydrogen argon gas
When heating 1 is small in atmosphere, about 35 nanometer thickness of diamond particles adhesive layer of formation adds in the graphite of 0.8g, then 8GPa's
15m is sintered at a temperature of pressure and 2000 degrees Celsius, obtains high density polycrystalline diamond particle, uses high-resolution scanning electricity
The observation of mirror polished silicon wafer shows the particle about 4-12 nanometer thickness of diamond particles articulamentum, and it is estimated to be sintered compact diamond ratio
It is up to 92%.
Finally illustrate, the above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted, this field is common
Other modifications or equivalent substitution that technical staff makes technical scheme, without departing from technical solution of the present invention
Spirit and scope, should be covered by the scope of the claims of the present invention.
Claims (4)
1. high density glomerocryst superhard material, which is characterized in that it includes, by weight：The diamond particles of 70%-99%, 0.5%-
Any one of 25% carbide, nitride, boride, carbonitride, the metal adhesive of 0.5%-5%；
Toward the diamond particles of the 70%-99%, add in the carbide of 0.5%-25%, nitride, boride, carbonitride
Any one, add the metal adhesive of 0.5%-5%, temperature is 700-1900 DEG C, under the conditions of pressure is 200-800MPa
Be sintered, form one or more ultra-thin particle adhesive layers, after particle adhesive layer is crushed with carbons material grains or six sides
Boron nitride（HBN）It is sintered again, obtains high density polycrystalline diamond.
2. high density glomerocryst superhard material according to claim 1, which is characterized in that high density polycrystalline diamond includes big
The diamond of amount, diamond volume is in 70%-99%.
3. high density glomerocryst superhard material according to claim 1, which is characterized in that carbons substance for graphite, vitreous carbon,
One or more of graphene, any kind of fullerene, diamond-like-carbon.
4. the preparation method of high density glomerocryst superhard material according to claim 1, comprises the following steps：
Step 1：Batch mixing, by weight, added in the diamond particles of 70%-99% the carbide of 0.5%-25%, nitride,
Any one of boride, carbonitride, and 0.5%-5% metal adhesives are added in, above-mentioned substance is mixed evenly；
Step 2：First sintering, the mixed-powder obtained in step 1 is added in reacting furnace, in 700-1900 DEG C of temperature,
For pressure to be sintered for the first time under conditions of 200-800MPa and inert atmosphere, sintering time 3-20m obtains ultra-thin particle
Adhesive layer；
Step 3：It crushes, the known technological means of particle adhesive layer is crushed；
Step 4：Secondary charging adds in carbons material grains or hexagonal boron nitride（HBN）, and be uniformly mixed；
Step 5：Mixed-powder in step 4 is sent to reacting furnace, in 1700-2500 DEG C of temperature, pressure by double sintering
To carry out double sintering under conditions of 5-18GPa and inert atmosphere, sintering time 5-30m obtains high density polycrystalline diamond
Or high density glomerocryst hexagonal boron nitride.
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| CN106757333A (en) * | 2017-02-08 | 2017-05-31 | 河南工业大学 | A kind of preparation method of the direct Synthesis pure phase polycrystalline diamond of DLC |
| CN107030289B (en) * | 2017-03-16 | 2019-02-01 | 济宁利特纳米技术有限责任公司 | A kind of superhard cutter of graphene enhancing |
| GB201717270D0 (en) * | 2017-10-20 | 2017-12-06 | Element Six Ltd | Polycrystalline cubic boron nitride body |
| CN107761025A (en) * | 2017-11-04 | 2018-03-06 | 柏涛涛 | A kind of sheet material of high intensity and preparation method thereof |
| CN108893718B (en) * | 2018-06-29 | 2021-04-06 | 河南富莱格超硬材料有限公司 | Base material of polycrystalline diamond compact, preparation method of base material and polycrystalline diamond compact |
| CN109821480B (en) * | 2019-01-29 | 2020-08-18 | 燕山大学 | Superhard semiconductive amorphous carbon block material and preparation method thereof |
| CN112158835A (en) * | 2020-09-23 | 2021-01-01 | 吉林大学 | Synthesis method of carbon material with super-strong hardness |
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| US6814775B2 (en) * | 2002-06-26 | 2004-11-09 | Diamond Innovations, Inc. | Sintered compact for use in machining chemically reactive materials |
| WO2008047955A1 (en) * | 2006-10-16 | 2008-04-24 | Industry-Academic Cooperation Foundation, Yeungnam University | Method for manufacturing transparent polycrystalline aluminum oxynitride |
| WO2008093577A1 (en) * | 2007-01-30 | 2008-08-07 | Sumitomo Electric Hardmetal Corp. | Sintered composite material |
| KR20120098118A (en) * | 2011-02-28 | 2012-09-05 | 영남대학교 산학협력단 | Manufacturing method of polycrystalline aluminum oxynitride with improved transparency |
| CN103803985B (en) * | 2013-12-20 | 2017-08-22 | 河南工业大学 | The preparation method of nanostructured cubic boron nitride-dimond synneusis |
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Inventor after: Liu Xuzhong Inventor before: Lian Xinlan Inventor before: Mao Baozhan |
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Effective date of registration: 20180417 Address after: 450001 Jinsha Road, Zhengzhou hi tech Development Zone, Henan 33 Applicant after: Zhengzhou Asahi grinders Technology Development Co., Ltd. Address before: 450007 Henan Province, Zhengzhou City Road, No. 37 volt cow Road, building No. 14, No. 156 Applicant before: HENAN GUANGDU SUPERHARD MATERIAL CO., LTD. |
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