CN1053868A - Circuit protection device - Google Patents

Circuit protection device Download PDF

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Publication number
CN1053868A
CN1053868A CN 91100815 CN91100815A CN1053868A CN 1053868 A CN1053868 A CN 1053868A CN 91100815 CN91100815 CN 91100815 CN 91100815 A CN91100815 A CN 91100815A CN 1053868 A CN1053868 A CN 1053868A
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CN
China
Prior art keywords
turner
threshold value
overvoltage protection
circuit
arbitrary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN 91100815
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Chinese (zh)
Inventor
伊安·保罗·阿特金斯
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Raychem Ltd
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Raychem Ltd
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Publication date
Application filed by Raychem Ltd filed Critical Raychem Ltd
Publication of CN1053868A publication Critical patent/CN1053868A/en
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage

Abstract

This device comprises threshold value turner 6, additional overvoltage protection device 9 and capacitor 7.Threshold value turner 6 is connected between a pair of current-carrying circuit of circuit; additional overvoltage protection device 9 is in parallel with threshold value turner 6; capacitor 7 is connected with the threshold value turner, and does not connect with additional overvoltage protection device, and the capacitance of capacitor 7 is in 100pf to 200nf scope.The switching rate of additional overvoltage protection device is slower than threshold value turner, and preferably has the device of turnover or crowbar characteristic such as spark discharger or gas discharge tube.But this device protective circuit or element are avoided voltage transient, can be used in the extremely high frequency system because of its electric capacity is little.

Description

Circuit protection device
The present invention relates to protective circuit to voltage transient.
Utilize the whole bag of tricks for example lightning, static discharge or nuclear electromagnetic pulse, can in circuit, produce the voltage transient phenomenon.These phenomenons all may generate very large electric current in cable and the structure such as aircraft and boats and ships, these big electric currents can infiltrate in the electrical system, electrical system is damaged, from rather than make hardware damage that semiconductor is burnt, make the electronic system confusion exactly, for example cause loss or lose data of being stored etc.
Static discharge is to discharge extremely fast from the capacitor such as human body.This discharge can take place in very little scope, thereby is a very big threat to single electronic component.The induced electricity transient phenomena that cause by lightning to electric/electronic particularly the electric/electronic in (but not being) space craft be a threat.
Threatening maximum to Electrical and Electronic equipment is electromagnetic pulse, and typical pulse is that pulse duration is several microseconds, rise time to be several nanoseconds pulse, and its field intensity is to be about 10 under the situation of 130 peace/rice (establishing free space impedance is 377 Europe) following the H field intensity 5Volt/rice.Usually, to play the amplitude of destruction be to take place to the frequency range of 100 megahertzes at 10 kilo hertzs in pulse.
The invention provides a kind of protective circuit device to the voltage transient phenomenon, this protective device comprises a threshold value turner (threshold foldback device), an additional overvoltage protection device and a capacitor.The threshold value turner is connected between a pair of current-carrying circuit of circuit.Additional overvoltage protection device and threshold value turner are connected in parallel, and switching rate is slower than threshold value turner.Capacitor has the scope of capacitance in 100 picofarad to 200 millimicrofarads, and it and threshold value turner are connected in series, but is not connected in series with additional overvoltage protection device.
Here employed " threshold value turner " (Threshold foldback device) speech is meant a kind of device, this device is when low-voltage, resistance is big, for example at least 10 kilo-ohms, at least 100 kilo-ohms preferably, better be at least 1 megaohm, good especially is to be at least 10 megaohms, but high voltage when (minimum of this voltage is called " threshold voltage ") then its magnitude of voltage drop to low value from its high value, for example less than 10 Europe.It is little only to keep " maintenance " electric current that flows through this device, and this device just keeps its low resistance state, and not so it will automatically restore to its high resistance state.
The capacitance of threshold value turner is 100 picofarads at the most preferably, better 20 picofarads at the most, 10 picofarads at the most that good especially is.It is main solid state device that the threshold value turner preferably includes such as amorphous chalcogenide compositions, particularly mainly by selenium and or sulphur be main device together with two compositions that constitute preferably one of in germanium, gallium, arsenic or the antimony.Because the existence of significant amounts tellurium may cause high resistant (or " disconnection ") the state resistance rate in said composition to drop to unallowed stage, therefore this chalcogenide compositions tellurium of containing 10 atomic percentages at the most is for well, contain that 5 atomic percentage telluriums are better at the most, it is best not contain tellurium especially substantially.This its advantage of device that contains the sulfur family compound composition is, when their experience voltage transients, they will be as quick as thought, convert its low resistive state at 1 nanosecond interior to from its high-impedance state usually.This in addition chalcogenide device presents very low electric capacity usually, for example in the 10 picofarad orders of magnitude.The example of this device is at european patent application 196,891,198,624,242,902,261,937,261,938 and 261,939(is corresponding to U.S. Patent application 170,576,945,640,214,913,99,947,218,511 and 99,931, these open files are listed in for reference here) be disclosed." turner " this speech comprises the device that is referred to as " ripping bar " device (" crowbar " device).The example that can be used for those devices of sort circuit comprises Zener (Zener) diode, flip-over type thyristor and analog.Sort circuit preferably only contains a single threshold value turner.
Device of the present invention can be extremely effectively makes it avoid the influence of voltage transient phenomenon in order to the load or the element of protective circuit.The capacitance of this device is usually little, and 100 picofarads at the most for example can be used for operating frequency up to unlikely signal or transfer of data being produced adverse influence in the high frequency signal of about 1 gigahertz and the data transmission system.
In most of the cases; when circuit stood transition, the potential difference on two overvoltage protection devices increased, when reaching the threshold voltage of threshold device till; at this moment the voltage at two ends of loading drops to a low value, and this low value is relevant with the resistance of " conducting " state of threshold value turner.In a single day the threshold value turner changes its low resistance state over to, and capacitor just begins with the transient current charging, and the potential difference at the two ends of the potential difference at capacitor two ends, and load simultaneously all can begin to rise.Threshold value turner and additional overvoltage protection device can be with a resistor separately, for example up to the resistor of 1 kilo-ohm of scope, or switching, so that the voltage at overvoltage protection device two ends can continue rising.Along with transient phenomena continue, can reach such moment, at this moment efflux is to being enough to make the slower overvoltage protection device of action change its low resistance state over to, and will flow through the transient current shunting of load.
Additional overvoltage protection device is located between solid-state turner and the signal transmssion line usually, makes it avoid the influence of very big transition in order to protection threshold value turner.Additional preferably overvoltage protection device is the turner such as gas discharge unit or " spark gap ".This class device can transmit a large amount of electric energy, but its electric capacity is very little.If adopt the then available series resistance of this additional device that itself and solid-state turner are separated up to 1 kilo-ohm; even when solid-state turnover circuit had changed its low resistance state over to, this resistance also can make the voltage at another circuit brake two ends be elevated to the threshold voltage of this device.
In device of the present invention, capacitor can play high pass filter, allows the low energy high frequency forward position of waveform to be handled by the threshold value turner, and allows the low speed high energy part of waveform to be handled by the slower overvoltage protection device of additional action.The correct capacitance of capacitor of selecting can keep the threshold value turner to be in its safety operation area, and guarantees that voltage or not overshoot can not take place because of additional overvoltage protection device operating rate is low.The capacitance of capacitor is relevant with many factors; comprising the safety operation area of turner, the impedance of circuit power and the reliable breakover voltage and the speed of another circuit brake; but usually in 100 picofarad to 200 millimicrofarads; preferably in 1 to 100 millimicrofarad, particularly 10 to 50 millimicrofarads are best.
This device can also add other device.For example can on a circuit between threshold value turner (or any other element) and the load, install a reducible fusing type device.This device under normal circumstances resistance is low, but can be increased to high value, and International Patent Application PCT/GB89/00797 that UK Patent Application 8816632.7 obtains priority promptly discloses this device, here the content of the disclosure is also included as a reference.Can adopt voltage clamping deboost overshoot before the threshold transition device is able to do in time conversion.This voltage clamping can be chosen from many for example back-to-back diode apparatus of device (diode wherein can comprise semiconductor diode, avalanche diode or Zener diode) with pressure limiting performance.This voltage clamping also can comprise MIM(metal insulator-metal) or nin device or inflation voltage stabilizing.Disclose MIM and nin device with UK Patent Application 8816630 and 8816631 International Patent Application PCT/GB89/000809 and the PCT/GB89/00808 that obtain priority, also included for reference here the content of this introduction.Here employed " nin device " speech comprise those contain the noncrystalline silicon layer be clipped in contain n ± or the doped layer of p-alloy between device (this has fully described in our co-pending patent application).The electric capacity of voltage clamping is 50 picofarads at the most preferably, and therefore, the nin device is more welcome than MIM device.The clamping voltage of voltage clamping is set up to such an extent that make its normal working voltage that is higher than circuit usually, for example is about 1.5 times of normal working voltage, so that the work of its unlikely interfered circuit, but do not cause the voltage at load two ends too high before clamp yet.
In a circuit brake of connecting between additional overvoltage protection device and the signal transmssion line, can also install another kind of device; this device can become high resistance state from low resistance state under the situation of the long especially for example short circuit of duration of overload etc., to cut off circuit.This device can be a PTC(positive temperature coefficient for example) the device circuitry protective device, this is at United States Patent (USP) 4,237, and 441,4; 426,663,4,426,339 and 4; 774,024 and european patent application 38,713 in all to have described, also include the disclosure content for reference here.A kind of suitable device is sold by California, USA social connections Parker's Raychem company, and brand name is " Polyswitch ".
In some cases, device of the present invention can be by working with above-mentioned different mode.For example, this circuit can be subjected to and have the wavefront transition that causes of the speed of 1000 volts/nanosecond (for example with) static discharge of rising extremely promptly usually.Solid-state threshold value turner and any voltage clamping might be separated through enough time-delay, and this time-delay is enough to allow the voltage at turner two ends surpass its threshold voltage before the transition of voltage clamping experience reaches any degree.Equally, when employing resembles the quick turnover device of chalcogenide device and so on, transient phenomena might by the turnover device shunted at the load two ends and do not cause voltage clamp or reducible fuse (if any) or gas discharge tube it is reacted.This point advantageous particularly is because the transient phenomena of this form might make the voltage clamping permanent damages.
The circuit diagram of circuit protection device of the present invention of seeing figures.1.and.2 is described the device of two kinds of forms of the present invention by way of example.In the accompanying drawing, same label is represented same element.
Referring to Fig. 1.A pair of transmission line 1 and 2 is connected to load (figure right side with far) with signal transmssion line (figure side with far away).Connect one between the transmission line 1 and 2 such as solid-state threshold value turner 6 by amorphous chalcogenide compositions.The capacitor 7 and the turner 6 of 33 millimicrofarads are connected in series.Resistance 8, (generally reaching 1 kilo-ohm) is connected in series with turner 6 and capacitor 7.Between two transmission lines, resistance 8 is preferably selected to such an extent that make it with the impedance matching with incoming line of all other series connection of this device and element in parallel, thereby makes the transient phenomena that reflect back reduce to minimum degree.The size of this resistance is chosen to such an extent that make its incident transition power of returning that is reflected be no more than 50% preferably, is more preferably and is no more than 25%, and good especially is to be no more than 10%.
Between transmission line 1 and 2, be connected with a spark discharger or discharge tube 9 in turner 6 transmission line sides.A series resistance 13 is located between threshold value turner 6 and the spark gap 9, and its resistance reaches 100 kilo-ohms.
The advantage of this ball bearing made using is that threshold value turner 6, capacitor 7 and any resistance are all little than spark gap on volume, in fact can be contained on the spark discharger.Therefore this device can be used for replacing in the circuit traditional spark discharger of the same clamper of use usually.This device can present very short switching time, thereby in time more more difficult and change than traditional spark discharger.
When this device was subjected to voltage transient, till the voltage between the transmission line raise when being generally 80 to 200 volts, threshold value turner 6 changed its low resistance state over to.At this moment electric energy consumes in resistance 8, and till the voltage at A, B point two ends raises when spark discharger, this normally generation at least 20 nanoseconds time the transient phenomena begin after.
Fig. 2 shows and similar circuit brake shown in Figure 1, but the sort circuit protector can protective circuit be avoided the bigger wide transition of scope.This device comprises capacitor 7, resistance 8 and the spark discharger 9 of solid-state threshold value turner 6,100 picofarad to 200 millimicrofarads, and their work is all described the same with Fig. 1.In addition, this device also comprises a voltage clamping 3 and a series connection resistor 12.Voltage clamping comprises the diode 4 and 5 that a pair of " back-to-back " that is connected across the load two ends connects, and series resistance 12 reaches 1 kilo-ohm, is connected between voltage clamping 3 and the threshold value turner 6.
On the transmission line of spark discharger 9 these sides, be provided with circuit brake 10 or other overcurrent protective device that a series connection connects the polymer (carbon loaded polymer) that carries carbon.In addition, between voltage clamping 3 and load, be provided with the resetted fuse 11 that is connected in series.
When this device stood voltage transient, the voltage at clamper 3 two ends raise and to become high resistance and clamper 3 to till the voltage clamp at its two ends is when constant haply magnitude of voltage (for example 5 to 100 volts are generally 10 to 20 volts) up to fusing 11.At this moment the terminal voltage of 2 of A, B continues to raise, to till generally turner 6 changes its low resistance state over to 8 to 200 volts the time.At this moment, electric energy consumes in resistor 8, and till the terminal voltage of 2 of A, B raises when spark discharger 9 discharges, these 20 nanoseconds of generations after transient phenomena begin usually.
If the duration of transient phenomena surpasses about 100 milliseconds, the polymeric device 10 that carries carbon begins to change over to its high resistance state, and cuts off circuit.

Claims (13)

1, a kind of device of avoiding voltage transient in order to protective circuit; it is characterized in that it comprises: a threshold value turner, an additional overvoltage protection device and a capacitor; the threshold value turner is connected between a pair of current-carrying circuit of circuit; additional overvoltage protection device and threshold value turner and threshold value turner are connected in parallel; and its switching rate is slower than threshold value turner; this capacitor and threshold value turner are connected in series; but be not connected in series with additional overvoltage protection device, its capacitance is in the scope of 100 picofarad to 200 millimicrofarads.
2, device as claimed in claim 1 is characterized in that this device comprises a voltage clamping that is connected in parallel with threshold value turner and overvoltage protection device.
3, as the device of claim 1 or claim 2, it is characterized in that it comprises a resistance, the resistance of this resistance makes all series connection and the total impedance of element in parallel and impedance matchings of incoming line.
4,, it is characterized in that described voltage protector is a turner as the described device of arbitrary claim in the claim 1 to 3.
5,, it is characterized in that overvoltage protection device can be to the shunting of the electric energy on the two ends of the load that is connected to a pair of transmission line many than the shunting of threshold value turner as the described device of 1 to 4 arbitrary claim.
6, device as claimed in claim 4 is characterized in that described adjunct circuit protection comprises a spark discharger or a discharge tube.
7, as the described device of arbitrary claim in the claim 1 to 6, it is characterized in that described capacitor is as the work of high-pass filtering clamper, capacitance is set up to such an extent that make it guarantee that this quick turner is operated in the safety operation area, and allows the slower turner of action to work to the time.
As the described device of arbitrary claim in the claim 1 to 7, it is characterized in that 8, the threshold value turner comprises a switch element that is made of amorphous chalcogenide compositions.
9, device as claimed in claim 8 is characterized in that described chalcogenide compositions contains selenium and/or sulphur together with at least a element in germanium, gallium, arsenic or four kinds of elements of antimony, is not more than 10 atom % but contain tellurium.
10,, it is characterized in that the resistance of threshold value turner under high resistance state is at least 1 megaohm as the described device of arbitrary claim in the claim 1 to 9.
11, as the described device of arbitrary claim in the claim 1 to 10, it is characterized in that the electric capacity of threshold value turner is not more than 100 picofarads, preferably be not more than 50 picofarads.
12, device as claimed in claim 11 is characterized in that, the electric capacity of threshold value turner is not more than 20 picofarads.
As the described device of arbitrary claim in the right former 1 to 12, it is characterized in that 13, circuit inside partially absorbs the inner switching transition that produces at least.
CN 91100815 1990-01-30 1991-01-30 Circuit protection device Pending CN1053868A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB909002094A GB9002094D0 (en) 1990-01-30 1990-01-30 Circuit protection arrangement
GB9002094.2 1990-01-30

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CN1053868A true CN1053868A (en) 1991-08-14

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Application Number Title Priority Date Filing Date
CN 91100815 Pending CN1053868A (en) 1990-01-30 1991-01-30 Circuit protection device

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AU (1) AU7186991A (en)
GB (1) GB9002094D0 (en)
WO (1) WO1991011840A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1043499C (en) * 1995-11-17 1999-05-26 李长益 Low-voltage distribution type lightning-protection module
CN101061618B (en) * 2005-12-09 2010-04-07 木嵨均 Overvoltage protective device and method of overvoltage protection
CN102185304A (en) * 2011-05-16 2011-09-14 浙江大华技术股份有限公司 Surge protection circuit of video input signal
CN101350516B (en) * 2007-07-16 2011-11-30 台达电子工业股份有限公司 Circuit and method for protecting energy storage apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2167210B2 (en) * 2000-02-18 2002-12-16 Telefonica Sa PROTECTION EQUIPMENT OF FACILITIES WITH MODULATION BY CODED IMPULSES.
CN104134988A (en) * 2014-08-21 2014-11-05 国家电网公司 Multifunctional lightning protection device of intelligent single-phase electric meter

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2320075A1 (en) * 1973-04-19 1974-11-07 Messwandler Bau Gmbh PROTECTIVE CIRCUIT FOR ELECTRONIC EQUIPMENT AND COMPONENTS
US3973224A (en) * 1975-10-28 1976-08-03 The United States Of America As Represented By The Secretary Of The Army Tandem configuration for EMP protection
US4616286A (en) * 1982-08-02 1986-10-07 Puroflow Corporation Power line filter
US4799125A (en) * 1986-09-05 1989-01-17 Raychem Limited Circuit protection arrangement
GB8816631D0 (en) * 1988-07-13 1988-08-17 Raychem Ltd Circuit protection arrangement
WO1990003681A1 (en) * 1988-09-20 1990-04-05 Raychem Limited Circuit protection arrangement

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1043499C (en) * 1995-11-17 1999-05-26 李长益 Low-voltage distribution type lightning-protection module
CN101061618B (en) * 2005-12-09 2010-04-07 木嵨均 Overvoltage protective device and method of overvoltage protection
CN101350516B (en) * 2007-07-16 2011-11-30 台达电子工业股份有限公司 Circuit and method for protecting energy storage apparatus
CN102185304A (en) * 2011-05-16 2011-09-14 浙江大华技术股份有限公司 Surge protection circuit of video input signal

Also Published As

Publication number Publication date
AU7186991A (en) 1991-08-21
GB9002094D0 (en) 1990-03-28
WO1991011840A1 (en) 1991-08-08

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