CN105375330A - In-fiber whispering gallery filter-based ultra-narrow line width semiconductor laser device - Google Patents
In-fiber whispering gallery filter-based ultra-narrow line width semiconductor laser device Download PDFInfo
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- CN105375330A CN105375330A CN201510927976.8A CN201510927976A CN105375330A CN 105375330 A CN105375330 A CN 105375330A CN 201510927976 A CN201510927976 A CN 201510927976A CN 105375330 A CN105375330 A CN 105375330A
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Abstract
The invention provides an in-fiber whispering gallery filter-based ultra-narrow line width semiconductor laser device. The in-fiber whispering gallery filter-based ultra-narrow line width semiconductor laser device is characterized by comprising a semiconductor laser device body and an output fiber, wherein an in-fiber optical whispering gallery microcavity structure is arranged at the middle part of the output fiber; a laser output part of the semiconductor laser device body is connected with an input end light path of the output fiber; an output part of the ultra-narrow line width semiconductor laser device is formed at an output end of the output fiber; and the resonant frequency of the semiconductor laser device body is equal to that of the in-fiber optical whispering gallery microcavity structure. The in-fiber whispering gallery filter-based ultra-narrow line width semiconductor laser device has the beneficial effects that the ultra-narrow line width semiconductor laser device provided by the invention does not need to utilize an optical fiber with a large length as a backward rayleigh scattering source, but utilizes the in-fiber optical whispering gallery microcavity structure as the backward rayleigh scattering source, and is very small in size.
Description
Technical field
The present invention relates to a kind of semiconductor laser technology, particularly relate to a kind of based on the super-narrow line width semiconductor laser at fine Echo Wall filter.
Background technology
Semiconductor laser has that volume is little, power consumption is few and the advantage such as cost is low, has been widely used in the fields such as optical fiber communication, sensing, Active Optical Fiber pumping and microwave signal source.Laser linewidth is a key technical index of semiconductor laser, which determines the technical performances such as the phase noise of semiconductor laser, coherence length and pumping efficiency.
Under prior art conditions, because the size of semiconductor laser resonator is less, and quality factor is lower, and the laser linewidth of semiconductor laser is usually in MHz magnitude; In order to compress the laser linewidth of semiconductor laser, in prior art, the laser linewidth that the method for usual employing external feedback carrys out noise spectra of semiconductor lasers is compressed, but, the existing structure for realizing external feedback is comparatively complicated, structural stability is poor, and to the compression degree of laser linewidth limited (laser linewidth can only be compressed to kHz magnitude from MHz), the laser linewidth how compressing semiconductor laser is further the difficult point of current laser linewidth research.
Theoretical and experimental study is verified, Rayleigh scattering can be compressed the laser linewidth of fiber laser, but, when realizing laser linewidth compression, the optical fiber of hundreds of meters of length is needed to provide the backward Rayleigh scattering of accumulation, in addition, Rayleigh scattering is vulnerable to the impact of the factors such as extraneous vibration, and optical fiber its stability longer therefore producing Rayleigh scattering signal is lower.
Summary of the invention
For the problem in background technology, the present invention proposes a kind of based on the super-narrow line width semiconductor laser at fine Echo Wall filter, its innovation is: described super-narrow line width semiconductor laser is made up of semiconductor laser and output optical fibre; Be provided with at fine type optics Echo Wall micro-cavity structure in the middle part of described output optical fibre; The Laser output portion of described semiconductor laser is connected with the input light path of output optical fibre, and the output of output optical fibre forms the efferent of super-narrow line width semiconductor laser; The resonance frequency of described semiconductor laser is identical with in the resonance frequency of fine type optics Echo Wall micro-cavity structure.
A kind of existing optical fibre device (its typical structure and manufacture method as No. 201510230444.9 Chinese patent application in the one recorded at fine type optics Echo Wall micro-cavity structure and preparation method thereof) at fine type optics Echo Wall micro-cavity structure, its the most outstanding feature is, Echo Wall microcavity is integrated on optical fiber, and device architecture is simple, volume is little and structural stability is fine, known based on existing theory, after incident light enters Echo Wall microcavity, incident light can circulate hundreds thousand of times under the resonance effect effect of Echo Wall microcavity, this is equivalent to the effective optical path significantly extending incident light, and the every bit in the Echo Wall, capital is due to the heterogeneity of material, there is the probability producing backward Rayleigh scattering, so inventor considers Echo Wall microcavity to combine with semiconductor laser, utilize Echo Wall microcavity significantly can extend the feature of effective optical path, using Echo Wall microcavity as backward Rayleigh scattering source, thus make Echo Wall microcavity provide stable Rayleigh astigmatism to semiconductor laser, the laser linewidth of noise spectra of semiconductor lasers is compressed, the larger problem of backward Rayleigh scattering source timer volume is made with long length fiber to solve in prior art.
Concrete principle of the present invention is: for the ease of setting forth, aforesaid " at fine type optics Echo Wall micro-cavity structure " is hereinafter " Echo Wall ", on aforesaid output optical fibre, the section connecting semiconductor laser and the Echo Wall is designated as input section, and the section connecting the Echo Wall and efferent is designated as deferent segment; The laser beam that semiconductor laser exports arrives Echo Wall position place after the conduction of input section, a part of component in laser beam will to enter in the Echo Wall and at Echo Wall Inner eycle, in the process of circulation, will constantly inspire backward Rayleigh scattering light, another part component in laser beam conducts to through deferent segment the output that efferent forms laser; A part in aforesaid backward Rayleigh scattering light can be conducted in the section of being fed back into and reverse transfer is returned in the resonant cavity of semiconductor laser, another part in backward Rayleigh scattering light can at Echo Wall Inner eycle, in the process of circulation, backward Rayleigh scattering light will build up under the resonance effect effect of the Echo Wall, when backward Rayleigh scattering light is accumulated to a certain degree, just can provide stable backward Rayleigh scattering light to semiconductor laser, thus the laser linewidth of noise spectra of semiconductor lasers plays compression, efferent is made to export the laser beam of super-narrow line width; After adopting the present invention, no longer need the optical fiber of hundreds of meters of length to provide the backward Rayleigh scattering of accumulation, only need very short length, the output optical fibre of the band Echo Wall just can form stable backward Rayleigh scattering source, greatly reduces the volume of super-narrow line width semiconductor laser.
Preferably, be socketed with a joint outside the input of described output optical fibre, the Laser output portion of described semiconductor laser is connected with one end of a connecting fiber, and the other end of connecting fiber is plugged on joint.After adopting this preferred version, connect by modular connection between semiconductor laser and output optical fibre, effectively can improve the convenience of connection and the versatility of device.
Advantageous Effects of the present invention is: the semiconductor laser providing a kind of super-narrow line width, the semiconductor laser of this super-narrow line width does not need to use the optical fiber of large length as backward Rayleigh scattering source, but adopt at fine type optics Echo Wall micro-cavity structure as rear to Rayleigh scattering source, the volume of device is very small and exquisite.
Accompanying drawing explanation
Fig. 1, principle schematic of the present invention;
Fig. 2, in fine type optics Echo Wall micro-cavity structure principle schematic;
In figure, each title corresponding to mark is respectively: semiconductor laser 1, output optical fibre 2, at fine type optics Echo Wall micro-cavity structure 2-1, joint 3.
Embodiment
Based on the super-narrow line width semiconductor laser at fine Echo Wall filter, its innovation is: described super-narrow line width semiconductor laser is made up of semiconductor laser 1 and output optical fibre 2; Be provided with at fine type optics Echo Wall micro-cavity structure 2-1 in the middle part of described output optical fibre 2; The Laser output portion of described semiconductor laser 1 is connected with the input light path of output optical fibre 2, and the output of output optical fibre 2 forms the efferent of super-narrow line width semiconductor laser; The resonance frequency of described semiconductor laser 1 is identical with in the resonance frequency of fine type optics Echo Wall micro-cavity structure 2-1.
Further, be socketed with a joint 3 outside the input of described output optical fibre 2, the Laser output portion of described semiconductor laser 1 is connected with one end of a connecting fiber, and the other end of connecting fiber is plugged on joint 3.
Claims (2)
1. based on the super-narrow line width semiconductor laser at fine Echo Wall filter, it is characterized in that: described super-narrow line width semiconductor laser is made up of semiconductor laser (1) and output optical fibre (2); Described output optical fibre (2) middle part is provided with fine type optics Echo Wall micro-cavity structure (2-1); The Laser output portion of described semiconductor laser (1) is connected with the input light path of output optical fibre (2), and the output of output optical fibre (2) forms the efferent of super-narrow line width semiconductor laser; The resonance frequency of described semiconductor laser (1) is identical with in the resonance frequency of fine type optics Echo Wall micro-cavity structure (2-1).
2. according to claim 1 based on the super-narrow line width semiconductor laser at fine Echo Wall filter, it is characterized in that: outside the input of described output optical fibre (2), be socketed with a joint (3), the Laser output portion of described semiconductor laser (1) is connected with one end of a connecting fiber, and the other end of connecting fiber is plugged on joint (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510927976.8A CN105375330A (en) | 2015-12-15 | 2015-12-15 | In-fiber whispering gallery filter-based ultra-narrow line width semiconductor laser device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510927976.8A CN105375330A (en) | 2015-12-15 | 2015-12-15 | In-fiber whispering gallery filter-based ultra-narrow line width semiconductor laser device |
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| CN105375330A true CN105375330A (en) | 2016-03-02 |
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| CN201510927976.8A Pending CN105375330A (en) | 2015-12-15 | 2015-12-15 | In-fiber whispering gallery filter-based ultra-narrow line width semiconductor laser device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113872040A (en) * | 2021-09-27 | 2021-12-31 | 重庆大学 | Narrow linewidth laser array generation structure based on echo wall microcavity |
| CN114300937A (en) * | 2021-12-16 | 2022-04-08 | 成都天奥电子股份有限公司 | Narrow linewidth frequency doubling laser based on optical microcavity feedback injection locking |
| CN115473122A (en) * | 2022-10-08 | 2022-12-13 | 北京大学长三角光电科学研究院 | External cavity type semiconductor laser |
Citations (4)
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| US20070237460A1 (en) * | 2006-04-07 | 2007-10-11 | Xudong Fan | Hollow Core Optical Ring Resonator Sensor, Sensing Methods, and Methods of Fabrication |
| CN102377098A (en) * | 2010-08-10 | 2012-03-14 | Oe电波公司 | Feedback-enhanced self-injection locking of lasers to optical resonators |
| CN104253372A (en) * | 2013-06-27 | 2014-12-31 | 中国科学院化学研究所 | Whispering gallery mode photonic device and preparation method thereof |
| CN104932057A (en) * | 2015-05-08 | 2015-09-23 | 重庆大学 | In-fiber type optical echo wall micro-cavity structure and manufacturing method thereof |
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2015
- 2015-12-15 CN CN201510927976.8A patent/CN105375330A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20070237460A1 (en) * | 2006-04-07 | 2007-10-11 | Xudong Fan | Hollow Core Optical Ring Resonator Sensor, Sensing Methods, and Methods of Fabrication |
| CN102377098A (en) * | 2010-08-10 | 2012-03-14 | Oe电波公司 | Feedback-enhanced self-injection locking of lasers to optical resonators |
| CN104253372A (en) * | 2013-06-27 | 2014-12-31 | 中国科学院化学研究所 | Whispering gallery mode photonic device and preparation method thereof |
| CN104932057A (en) * | 2015-05-08 | 2015-09-23 | 重庆大学 | In-fiber type optical echo wall micro-cavity structure and manufacturing method thereof |
Non-Patent Citations (2)
| Title |
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| MICHAEL L.GORODETSKY ET AL.: "Rayleigh scattering in high-Q microspheres", 《JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B》 * |
| W.LIANG ET AL.: "Whispering-gallery-mode-resonator-based ultranarrow linewidth external-cavity semiconductor laser", 《OPTICS LETTERS》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113872040A (en) * | 2021-09-27 | 2021-12-31 | 重庆大学 | Narrow linewidth laser array generation structure based on echo wall microcavity |
| CN114300937A (en) * | 2021-12-16 | 2022-04-08 | 成都天奥电子股份有限公司 | Narrow linewidth frequency doubling laser based on optical microcavity feedback injection locking |
| CN115473122A (en) * | 2022-10-08 | 2022-12-13 | 北京大学长三角光电科学研究院 | External cavity type semiconductor laser |
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