CN105355718A - Copper indium gallium selenium solar cell window layer manufacturing method - Google Patents
Copper indium gallium selenium solar cell window layer manufacturing method Download PDFInfo
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- CN105355718A CN105355718A CN201510810201.2A CN201510810201A CN105355718A CN 105355718 A CN105355718 A CN 105355718A CN 201510810201 A CN201510810201 A CN 201510810201A CN 105355718 A CN105355718 A CN 105355718A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 title abstract 2
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 title abstract 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 229910052786 argon Inorganic materials 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 38
- 239000010409 thin film Substances 0.000 claims description 38
- 239000007789 gas Substances 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 239000003595 mist Substances 0.000 claims description 16
- 238000002360 preparation method Methods 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 14
- 229910052733 gallium Inorganic materials 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 14
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 14
- 150000003346 selenoethers Chemical class 0.000 claims description 14
- 239000004642 Polyimide Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 239000011888 foil Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 8
- 229910001220 stainless steel Inorganic materials 0.000 claims description 8
- 239000010935 stainless steel Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 4
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 14
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract 2
- 229910001882 dioxygen Inorganic materials 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 238000005086 pumping Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a copper indium gallium selenium (CIGS) solar cell window layer manufacturing method. The method comprises steps that, 1, a bottom electrode Mo, an absorption layer CIGS and a buffer layer CdS are sequentially deposited on a substrate, and the treated substrate is put in a vacuum room; 2, vacuum pumping for the vacuum room is carried out, mixed argon and oxygen gas is filled in the vacuum room; 3, when the vacuum degree in the vacuum room reaches 0.1-1.0Pa, a radio frequency magnetron sputtering method is employed to sputter ZnO targets; 4, the vacuum room is vacuumed to make the vacuum degree reach 1*10-3~3*10-4Pa, mixed argon and oxygen gas is filled into the vacuum room; and 5, when the vacuum degree in the vacuum room reaches 0.1-1.0Pa, a direct current magnetron sputtering method is employed to sputter In2O3:SnO2 in a component ratio of 9:1, and an ITO film with thickness in a range of 300-800 nanometers is coated on a ZnO of the substrate.
Description
Technical field
The present invention relates to technical field of solar cells, particularly relate to a kind of preparation method and method of testing of CIGS solar cell Window layer.
Background technology
Nowadays, solar cell is of many uses because of it, environmental protection and receive everybody concern, CIGS thin-film solar cell, because of distinguishing features such as its production cost are low, it is little to pollute, do not fail, low light level performance is good, is considered to one of the most promising third generation compound photovoltaic cell.The typical structure of existing CIGS thin-film solar cell is following multi-layer film structure: substrate/hearth electrode/absorbed layer/resilient coating/Window layer/top electrode.
CIGS thin-film solar cell many employings intrinsic ZnO film and ZnO thin film doped bilayer film are as battery Window layer, ZnO thin film doped have high conductivity, high transmission performance and advantage with low cost, simultaneously process tunability is higher, but due to ZnO thin film doped electric property and optical property limitation and the sensitiveness of environment is limited to the application of CIGS thin-film solar cell.Ito thin film has visible-range high-permeability and the good characteristic of conductivity because of it, and the stability under hygrothermal environment, is more suitable for CIGS (Copper, Indium, Gallium and Selenide) thin film solar cell window layer material.Therefore intrinsic ZnO is prepared under how realizing room temperature and ITO bilayer film becomes this technical field problem demanding prompt solution as CIGS (Copper, Indium, Gallium and Selenide) thin film solar cell window layer.
Summary of the invention
The technical problem to be solved in the present invention is: the preparation method providing a kind of CIGS solar cell Window layer.The preparation method of this CIGS solar cell Window layer adopts ito thin film can be prepared under room temperature environment as battery Window layer.
The technical scheme that the present invention takes for the technical problem existed in solution known technology is:
A preparation method for CIGS solar cell Window layer, comprises the steps:
Step one, on substrate depositions of bottom electrode Mo, absorbed layer CIGS, resilient coating CdS successively; Then vacuum chamber is put into;
Step 2, the vacuum degree in vacuum chamber is evacuated to 1 × 10
-3~ 3 × 10
-4in the scope of Pa, in vacuum chamber, then pass into the mist of argon gas and oxygen, the flow-rate ratio scope of argon gas and oxygen is 4:1 ~ 10:1;
Step 3, when vacuum house vacuum degree reaches 0.1-1.0Pa, adopt radio frequency magnetron sputtering method ZnO target is sputtered, target power density scope is 0.3-2.0W/cm
2, make ZnO film resilient coating CdS being coated with thickness 30-100 nanometer;
Step 4, the vacuum degree in vacuum chamber is evacuated to 1 × 10
-3~ 3 × 10
-4pa, passes into the mist of argon gas and oxygen, and the flow-rate ratio scope of argon gas and oxygen is 4:1 ~ 10:1;
Step 5, when vacuum house vacuum degree reaches 0.1-1.0Pa, adopt DC magnetron sputtering method to composition than being the In of 9:1
2o
3: SnO
2target sputters, and target power density scope is 1.5-5.0W/cm
2, the ZnO film of substrate is coated with the ito thin film that thickness range is 300-800 nanometer, namely makes the CIGS (Copper, Indium, Gallium and Selenide) thin film solar cell window layer of ZnO and ITO bilayer film.
Further: described substrate is by glass, and stainless steel foil, titanium foil, a kind of material in polyimides is made.
The advantage that the present invention has and good effect are:
1, the preparation method of a kind of CIGS (Copper, Indium, Gallium and Selenide) thin film solar cell window layer of the present invention.By regulating target power density and process gas pressure, the CIGS (Copper, Indium, Gallium and Selenide) thin film solar cell window layer of ZnO and the ITO bilayer film of different-thickness and quality of forming film can be realized, simple for process, same vacuum sputtering equipment making ZnO and ITO two kinds of films can be realized, save production cost and space.
2, the preparation method of a kind of CIGS (Copper, Indium, Gallium and Selenide) thin film solar cell window layer of the present invention.Adopt the CIGS (Copper, Indium, Gallium and Selenide) thin film solar cell window layer of low-temperature growth ZnO and ITO bilayer film, reduce the impact of Window layer preparation technology on battery obsorbing layer and resilient coating.
Accompanying drawing illustrates:
Fig. 1 is the CIGS thin-film solar cell structural representation in the present invention.
Wherein: 1-top electrode, 2-Window layer, 3-resilient coating, 4-absorbed layer, 5-hearth electrode, 6-substrate.
Embodiment
For summary of the invention of the present invention, Characteristic can be understood further, hereby exemplify following examples, and coordinate accompanying drawing to be described in detail as follows:
Consult Fig. 1, CIGS thin-film solar cell, comprise substrate 6, hearth electrode 5, absorbed layer 4, resilient coating 3, Window layer 2 and top electrode 1, its backing material can be glass, stainless steel foil, titanium foil, polyimides etc., on substrate successively after depositions of bottom electrode Mo/ absorbed layer CIGS/ resilient coating CdS, put into vacuum chamber, be evacuated to 1 × 10
-3~ 3 × 10
-4pa, temperature controls in room temperature, pass into the mist of argon gas and oxygen, flow-rate ratio is 4:1 ~ 10:1, adopt radio frequency magnetron sputtering method to sputter ZnO target when vacuum house vacuum degree reaches 0.1-1.0Pa, target power density is 0.3-2.0W/cm2, makes ZnO film resilient coating CdS being coated with thickness 30-100 nanometer; 1 × 10 is evacuated to again by being equipped with the vacuum chamber being coated with ZnO film battery
-3~ 3 × 10
-4pa, temperature controls in room temperature, pass into the mist of argon gas and oxygen, flow-rate ratio is 4:1 ~ 10:1, when vacuum house vacuum degree reaches 0.1-1.0Pa, adopt DC magnetron sputtering method to sputter than the In2O3:SnO2 target for 9:1 (wt%) composition, target power density is 1.5-5.0W/cm2, the ZnO film of substrate is coated with the ito thin film of thickness 300-800 nanometer, namely makes the CIGS (Copper, Indium, Gallium and Selenide) thin film solar cell window layer of ZnO and ITO bilayer film.
Preferred embodiment 1: a kind of preparation method of CIGS solar cell Window layer,
Adopt glass (also can adopt stainless steel foil, titanium foil, the one in polyimides) as CIGS thin-film solar cell substrate, on substrate successively after depositions of bottom electrode Mo, absorbed layer CIGS, resilient coating CdS, substrate is put into vacuum chamber, is evacuated to 3 × 10
-4pa, temperature controls in room temperature, pass into the mist of argon gas and oxygen, flow-rate ratio is 8:1, adopt radio frequency magnetron sputtering method to sputter ZnO target when vacuum house vacuum degree reaches 0.4Pa, target power density is 0.3W/cm2, makes ZnO film resilient coating CdS being coated with thickness 30 nanometer; 3 × 10-4Pa is evacuated to again by being equipped with the vacuum chamber being coated with ZnO film battery, temperature controls in room temperature, pass into the mist of argon gas and oxygen, flow-rate ratio is 8:1, when vacuum house vacuum degree reaches 0.5Pa, DC magnetron sputtering method is adopted to sputter than the In2O3:SnO2 target for 9:1 (wt%) composition, target power density is 1.5W/cm2, the ZnO film of substrate is coated with the ito thin film of thickness 400 nanometer, namely makes the CIGS (Copper, Indium, Gallium and Selenide) thin film solar cell window layer of intrinsic ZnO and ITO bilayer film.
Preferred embodiment 2: a kind of preparation method of CIGS solar cell Window layer,
Adopt glass (also can adopt stainless steel foil, titanium foil, the one in polyimides) as CIGS thin-film solar cell substrate, on substrate successively after depositions of bottom electrode Mo, absorbed layer CIGS, resilient coating CdS, substrate is put into vacuum chamber, is evacuated to 1 × 10
-3pa, temperature controls in room temperature, pass into the mist of argon gas and oxygen, flow-rate ratio is 4:1, adopt radio frequency magnetron sputtering method to sputter ZnO target when vacuum house vacuum degree reaches 0.4Pa, target power density is 0.3W/cm2, makes ZnO film resilient coating CdS being coated with thickness 30 nanometer; 3 × 10-4Pa is evacuated to again by being equipped with the vacuum chamber being coated with ZnO film battery, temperature controls in room temperature, pass into the mist of argon gas and oxygen, flow-rate ratio is 4:1, when vacuum house vacuum degree reaches 0.5Pa, DC magnetron sputtering method is adopted to sputter than the In2O3:SnO2 target for 9:1 (wt%) composition, target power density is 1.5W/cm2, the ZnO film of substrate is coated with the ito thin film of thickness 400 nanometer, namely makes the CIGS (Copper, Indium, Gallium and Selenide) thin film solar cell window layer of intrinsic ZnO and ITO bilayer film.
Preferred embodiment 3: a kind of preparation method of CIGS solar cell Window layer,
Adopt glass (also can adopt stainless steel foil, titanium foil, the one in polyimides) as CIGS thin-film solar cell substrate, on substrate successively after depositions of bottom electrode Mo, absorbed layer CIGS, resilient coating CdS, substrate is put into vacuum chamber, is evacuated to 3 × 10
-4pa, temperature controls in room temperature, pass into the mist of argon gas and oxygen, flow-rate ratio is 10:1, adopt radio frequency magnetron sputtering method to sputter ZnO target when vacuum house vacuum degree reaches 0.4Pa, target power density is 0.3W/cm2, makes ZnO film resilient coating CdS being coated with thickness 30 nanometer; 3 × 10 are evacuated to again by being equipped with the vacuum chamber being coated with ZnO film battery
-4pa, temperature controls in room temperature, pass into the mist of argon gas and oxygen, flow-rate ratio is 10:1, when vacuum house vacuum degree reaches 0.5Pa, adopt DC magnetron sputtering method to sputter than the In2O3:SnO2 target for 9:1 (wt%) composition, target power density is 1.5W/cm2, the ZnO film of substrate is coated with the ito thin film of thickness 400 nanometer, namely makes the CIGS (Copper, Indium, Gallium and Selenide) thin film solar cell window layer of intrinsic ZnO and ITO bilayer film.
Preferred embodiment 4: a kind of preparation method of CIGS solar cell Window layer,
Adopt glass (also can adopt stainless steel foil, titanium foil, the one in polyimides) as CIGS thin-film solar cell substrate, on substrate successively after depositions of bottom electrode Mo, absorbed layer CIGS, resilient coating CdS, substrate is put into vacuum chamber, is evacuated to 3 × 10
-4pa, temperature controls in room temperature, pass into the mist of argon gas and oxygen, flow-rate ratio is 4:1, adopt radio frequency magnetron sputtering method to sputter ZnO target when vacuum house vacuum degree reaches 0.4Pa, target power density is 0.3W/cm2, makes ZnO film resilient coating CdS being coated with thickness 30 nanometer; 3 × 10-4Pa is evacuated to again by being equipped with the vacuum chamber being coated with ZnO film battery, temperature controls in room temperature, pass into the mist of argon gas and oxygen, flow-rate ratio is 4:1, when vacuum house vacuum degree reaches 0.5Pa, DC magnetron sputtering method is adopted to sputter than the In2O3:SnO2 target for 9:1 (wt%) composition, target power density is 5W/cm2, the ZnO film of substrate is coated with the ito thin film of thickness 400 nanometer, namely makes the CIGS (Copper, Indium, Gallium and Selenide) thin film solar cell window layer of intrinsic ZnO and ITO bilayer film.
Preferred embodiment 5: a kind of preparation method of CIGS solar cell Window layer,
Adopt glass (also can adopt stainless steel foil, titanium foil, one in polyimides) as CIGS thin-film solar cell substrate, depositions of bottom electrode Mo successively on substrate, absorbed layer CIGS, after resilient coating CdS, substrate is put into vacuum chamber, be evacuated to 3 × 10-4Pa, temperature controls in room temperature, pass into the mist of argon gas and oxygen, flow-rate ratio is 8:1, adopt radio frequency magnetron sputtering method to sputter ZnO target when vacuum house vacuum degree reaches 0.4Pa, target power density is 0.3W/cm2, make ZnO film resilient coating CdS being coated with thickness 30 nanometer, 3 × 10-4Pa is evacuated to again by being equipped with the vacuum chamber being coated with ZnO film battery, temperature controls in room temperature, pass into the mist of argon gas and oxygen, flow-rate ratio is 8:1, when vacuum house vacuum degree reaches 0.5Pa, DC magnetron sputtering method is adopted to sputter than the In2O3:SnO2 target for 9:1 (wt%) composition, target power density is 5W/cm2, the ZnO film of substrate is coated with the ito thin film of thickness 400 nanometer, namely makes the CIGS (Copper, Indium, Gallium and Selenide) thin film solar cell window layer of intrinsic ZnO and ITO bilayer film.
Above embodiments of the invention have been described in detail, but described content being only preferred embodiment of the present invention, can not being considered to for limiting practical range of the present invention.All equalizations done according to the present patent application scope change and improve, and all should still belong within patent covering scope of the present invention.
Claims (2)
1. a preparation method for CIGS solar cell Window layer, is characterized in that: comprise the steps:
Step one, on substrate depositions of bottom electrode Mo, absorbed layer CIGS, resilient coating CdS successively; Then vacuum chamber is put into;
Step 2, the vacuum degree in vacuum chamber is evacuated to 1 × 10
-3~ 3 × 10
-4in the scope of Pa, in vacuum chamber, then pass into the mist of argon gas and oxygen, the flow-rate ratio scope of argon gas and oxygen is 4:1 ~ 10:1;
Step 3, when vacuum house vacuum degree reaches 0.1-1.0Pa, adopt radio frequency magnetron sputtering method ZnO target is sputtered, target power density scope is 0.3-2.0W/cm
2, make ZnO film resilient coating CdS being coated with thickness 30-100 nanometer;
Step 4, the vacuum degree in vacuum chamber is evacuated to 1 × 10
-3~ 3 × 10
-4pa, passes into the mist of argon gas and oxygen, and the flow-rate ratio scope of argon gas and oxygen is 4:1 ~ 10:1;
Step 5, when vacuum house vacuum degree reaches 0.1-1.0Pa, adopt DC magnetron sputtering method to composition than being the In of 9:1
2o
3: SnO
2target sputters, and target power density scope is 1.5-5.0W/cm
2, the ZnO film of substrate is coated with the ito thin film that thickness range is 300-800 nanometer, namely makes the CIGS (Copper, Indium, Gallium and Selenide) thin film solar cell window layer of ZnO and ITO bilayer film.
2. the preparation method of CIGS solar cell Window layer according to claim 1, is characterized in that: described substrate is by glass, and stainless steel foil, titanium foil, a kind of material in polyimides is made.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106684184A (en) * | 2017-01-04 | 2017-05-17 | 浙江尚越新能源开发有限公司 | Copper indium gallium selenide (CIGS) thin-film solar cell window layer and preparation method thereof |
| CN116288213A (en) * | 2023-03-29 | 2023-06-23 | 南开大学 | Preparation method and application of ferroelectric reinforced copper-based thin film solar cell cadmium-free buffer layer hydrogen-doped zinc-tin-oxide |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106684184A (en) * | 2017-01-04 | 2017-05-17 | 浙江尚越新能源开发有限公司 | Copper indium gallium selenide (CIGS) thin-film solar cell window layer and preparation method thereof |
| CN106684184B (en) * | 2017-01-04 | 2018-04-10 | 浙江尚越新能源开发有限公司 | A kind of copper-indium-galliun-selenium film solar cell Window layer and preparation method thereof |
| CN116288213A (en) * | 2023-03-29 | 2023-06-23 | 南开大学 | Preparation method and application of ferroelectric reinforced copper-based thin film solar cell cadmium-free buffer layer hydrogen-doped zinc-tin-oxide |
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