CN105348749A - Embedded microprocessor radiating packaging material - Google Patents

Embedded microprocessor radiating packaging material Download PDF

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Publication number
CN105348749A
CN105348749A CN201510929652.8A CN201510929652A CN105348749A CN 105348749 A CN105348749 A CN 105348749A CN 201510929652 A CN201510929652 A CN 201510929652A CN 105348749 A CN105348749 A CN 105348749A
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CN
China
Prior art keywords
parts
powder
embedded microprocessor
silicon nitride
gained
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CN201510929652.8A
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Chinese (zh)
Inventor
徐曦
李长云
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Hunan University of Technology
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Hunan University of Technology
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Priority to CN201510929652.8A priority Critical patent/CN105348749A/en
Publication of CN105348749A publication Critical patent/CN105348749A/en
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C08L63/10Epoxy resins modified by unsaturated compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/011Nanostructured additives
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/02Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/03Polymer mixtures characterised by other features containing three or more polymers in a blend
    • C08L2205/035Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

The invention relates to an embedded microprocessor radiating packaging material, which is prepared from following raw materials in parts by weight: 18-20 parts of carbon fiber, 8-12 parts of epoxy acrylate, 3-5 parts of alpha-aluminium oxide, 2-4 parts of blanc fixe, 4-8 parts of beryllia, 10-14 parts of benzophenonetetracarboxylic dianhydride, 4-8 parts of sodium bichromate, 2-6 parts of coal ash, 2-4 parts of sepiolite powder, 2-6 parts of silicon nitride powder, 2-3 parts of amino resin and 4-5 parts of auxiliaries. The auxiliaries are prepared from following raw materials in parts by weight: 3-6 parts of castor oil, 12-14 parts of silicon nitride micropowder, 3-7 parts of aluminite powder, 2-4 parts of n-butyl acetate, 6-10 parts of iron powder, 4-8 parts of carbon nanotube and 2-6 parts of epoxy resin. The embedded microprocessor radiating packaging material is firm and tough, is not easy to rust and durable, and has well heat conduction and radiating capacity, and the surface is not easy to wear.

Description

A kind of embedded microprocessor cooling encapsulation material
Technical field
The invention belongs to field of computer technology, be specifically related to a kind of embedded microprocessor cooling encapsulation material.
Background technology
Embedded microprocessor is developed by the CPU in multi-purpose computer and comes.Its feature has the treater of more than 32, and have higher performance, its price is also corresponding higher certainly.But with computer processor unlike, in actual Embedded Application, only retain and functional hardware that Embedded Application is closely related, remove other redundancy function part, so just realize the particular requirement of Embedded Application with minimum power consumption and resource.Compare with industrial control computer, embedded microprocessor has the advantage that volume is little, lightweight, cost is low, reliability is high.The core of embedded system hardware layer is embedded microprocessor, maximum different of embedded microprocessor and universal cpu are in the system that embedded microprocessor is operated in mostly as particular group institute special designs, many for universal cpu being completed by board of tasks are integrated in chip internal by it, thus be conducive to embedded system design time be tending towards miniaturization, also there is very high efficiency and reliability simultaneously.Embedded microprocessor in actual use, needs to adopt suitable mode to be dispelled the heat, to improve result of use better.
Summary of the invention
The object of the present invention is to provide a kind of embedded microprocessor cooling encapsulation material, to improve embedded microprocessor packaged material heat dispersion better, improve its work-ing life.
To achieve these goals, technical scheme of the present invention is as follows.
A kind of embedded microprocessor cooling encapsulation material, is made up of the raw material of following mass fraction: 18 ~ 20 parts, carbon fiber, epoxy acrylic resin 8 ~ 12 parts, 3 ~ 5 parts, ɑ-aluminum oxide, ground barium sulfate 2 ~ 4 parts, beryllium oxide 4 ~ 8 parts, benzophenone tetracarboxylic dianhydride 10 ~ 14 parts, sodium dichromate 4 ~ 8 parts, 2 ~ 6 parts, flyash, sepiolite powder 2 ~ 4 parts, alpha-silicon nitride powders 2 ~ 6 parts, 2 ~ 3 parts, aminoresin, auxiliary agent 4 ~ 5 parts.
Described auxiliary agent is made up of the raw material of following mass parts: Viscotrol C 3 ~ 6 parts, silicon nitride powder 12 ~ 14 parts, aluminium powder 3 ~ 7 parts, N-BUTYL ACETATE 2 ~ 4 parts, iron powder 6 ~ 10 parts, carbon nanotube 4 ~ 8 parts, epoxy resin 2 ~ 6 parts, the preparation method of this auxiliary agent is: be first dissolved in by N-BUTYL ACETATE in appropriate water, be mixed with the aqueous solution that concentration is 3 ~ 8%, and silicon nitride powder is dropped in solution, dispersed with stirring is filtered after evenly soaking 8 ~ 14h, dry, gained material mixes with other remaining component, and be heated to 30 ~ 40 DEG C, room temperature is cooled to after constant temperature dispersed with stirring 1 ~ 3h, material is ground to form 500 ~ 600 order fine powders again, obtain.
Above-mentioned embedded microprocessor cooling encapsulation material, its preparation method comprises following steps:
(1) first sepiolite powder, alpha-silicon nitride powders, aminoresin are dissolved in 10 ~ 16 times in the water of its total mass number, drop into benzophenone tetracarboxylic dianhydride subsequently, cryodrying after immersion 8 ~ 10h, by for subsequent use after gained material and flyash mixed grinding 4 ~ 5h;
(2), after step (1) gained material and other remaining component being uniformly mixed 1 ~ 2h, dropping into ball-milling processing in ball mill, make square hole sieve surplus≤0.1% of gained material;
(3) material of step (2) gained is sent into compression moulding in mould, with after the temperature of 600 ~ 200 DEG C sintering 4 ~ 6h under nitrogen or argon atmosphere, through naturally cooling to room temperature and get final product.
This beneficial effect of the invention is: the present invention combines the advantage of the compositions such as carbon fiber, epoxy acrylic resin, beryllium oxide, ɑ-aluminum oxide, there is good heat conduction, heat-sinking capability, auxiliary agent can improve the sintering character of mixing material, prevents material Thermal cracking, can improve the sintering character of mixing material, compact structure after mixing material is sintered, material of the present invention is firm tough, and surface is not easy to wear, not easily corrosion, durable in use, possess good heat conduction, heat-sinking capability.
Embodiment
Below in conjunction with embodiment, the specific embodiment of the present invention is described, better to understand the present invention.
Embodiment 1
In the present embodiment embedded microprocessor cooling encapsulation material, be made up of the raw material of following mass fraction: 18 parts, carbon fiber, epoxy acrylic resin 8 parts, 3 parts, ɑ-aluminum oxide, ground barium sulfate 2 parts, beryllium oxide 4 parts, benzophenone tetracarboxylic dianhydride 10 parts, sodium dichromate 4 parts, 2 parts, flyash, sepiolite powder 2 parts, alpha-silicon nitride powders 2 parts, 2 parts, aminoresin, auxiliary agent 4 parts.
Described auxiliary agent is made up of the raw material of following mass parts: Viscotrol C 3 parts, silicon nitride powder 12 parts, aluminium powder 3 parts, N-BUTYL ACETATE 2 parts, iron powder 6 parts, carbon nanotube 4 parts, epoxy resin 2 parts, the preparation method of this auxiliary agent is: be first dissolved in by N-BUTYL ACETATE in appropriate water, be mixed with the aqueous solution that concentration is 3%, and silicon nitride powder is dropped in solution, dispersed with stirring is filtered after evenly soaking 8h, dry, gained material mixes with other remaining component, and be heated to 30 DEG C, room temperature is cooled to after constant temperature dispersed with stirring 1h, material is ground to form 500 order fine powders again, obtain.
Above-mentioned embedded microprocessor cooling encapsulation material, its preparation method comprises following steps:
(1) first sepiolite powder, alpha-silicon nitride powders, aminoresin are dissolved in 10 times in the water of its total mass number, drop into benzophenone tetracarboxylic dianhydride subsequently, cryodrying after immersion 8h, by for subsequent use after gained material and flyash mixed grinding 4h;
(2), after step (1) gained material and other remaining component being uniformly mixed 1h, dropping into ball-milling processing in ball mill, make square hole sieve surplus≤0.1% of gained material;
(3) material of step (2) gained is sent into compression moulding in mould, with after the temperature of 600 DEG C sintering 6h under nitrogen or argon atmosphere, through naturally cooling to room temperature and get final product.
Embodiment 2
Embedded microprocessor cooling encapsulation material in the present embodiment, is made up of the raw material of following mass fraction: 19 parts, carbon fiber, epoxy acrylic resin 10 parts, 4 parts, ɑ-aluminum oxide, ground barium sulfate 3 parts, beryllium oxide 6 parts, benzophenone tetracarboxylic dianhydride 12 parts, sodium dichromate 6 parts, 4 parts, flyash, sepiolite powder 3 parts, alpha-silicon nitride powders 4 parts, 2 parts, aminoresin, auxiliary agent 4 parts.
Described auxiliary agent is made up of the raw material of following mass parts: Viscotrol C 5 parts, silicon nitride powder 13 parts, aluminium powder 5 parts, N-BUTYL ACETATE 3 parts, iron powder 8 parts, carbon nanotube 6 parts, epoxy resin 4 parts, the preparation method of this auxiliary agent is: be first dissolved in by N-BUTYL ACETATE in appropriate water, be mixed with the aqueous solution that concentration is 5%, and silicon nitride powder is dropped in solution, dispersed with stirring is filtered after evenly soaking 11h, dry, gained material mixes with other remaining component, and be heated to 35 DEG C, room temperature is cooled to after constant temperature dispersed with stirring 5h, material is ground to form 500 ~ 600 order fine powders again, obtain.
Above-mentioned embedded microprocessor cooling encapsulation material, its preparation method comprises following steps:
(1) first sepiolite powder, alpha-silicon nitride powders, aminoresin are dissolved in 13 times in the water of its total mass number, drop into benzophenone tetracarboxylic dianhydride subsequently, cryodrying after immersion 9h, by for subsequent use after gained material and flyash mixed grinding 4.5h;
(2), after step (1) gained material and other remaining component being uniformly mixed 1.5h, dropping into ball-milling processing in ball mill, make square hole sieve surplus≤0.1% of gained material;
(3) material of step (2) gained is sent into compression moulding in mould, with after the temperature of 650 DEG C sintering 5h under nitrogen or argon atmosphere, through naturally cooling to room temperature and get final product.
Embodiment 3
Embedded microprocessor cooling encapsulation material in the present embodiment, is made up of the raw material of following mass fraction: 20 parts, carbon fiber, epoxy acrylic resin 12 parts, 5 parts, ɑ-aluminum oxide, ground barium sulfate 4 parts, beryllium oxide 8 parts, benzophenone tetracarboxylic dianhydride 14 parts, sodium dichromate 8 parts, 6 parts, flyash, sepiolite powder 4 parts, alpha-silicon nitride powders 6 parts, 3 parts, aminoresin, auxiliary agent 5 parts.
Described auxiliary agent is made up of the raw material of following mass parts: Viscotrol C 6 parts, silicon nitride powder 14 parts, aluminium powder 7 parts, N-BUTYL ACETATE 4 parts, iron powder 10 parts, carbon nanotube 8 parts, epoxy resin 6 parts, the preparation method of this auxiliary agent is: be first dissolved in by N-BUTYL ACETATE in appropriate water, be mixed with the aqueous solution that concentration is 8%, and silicon nitride powder is dropped in solution, dispersed with stirring is filtered after evenly soaking 8h, dry, gained material mixes with other remaining component, and be heated to 40 DEG C, room temperature is cooled to after constant temperature dispersed with stirring 3h, material is ground to form 600 order fine powders again, obtain.
Above-mentioned embedded microprocessor cooling encapsulation material, its preparation method comprises following steps:
(1) first sepiolite powder, alpha-silicon nitride powders, aminoresin are dissolved in 16 times in the water of its total mass number, drop into benzophenone tetracarboxylic dianhydride subsequently, cryodrying after immersion 10h, by for subsequent use after gained material and flyash mixed grinding 5h;
(2), after step (1) gained material and other remaining component being uniformly mixed 2h, dropping into ball-milling processing in ball mill, make square hole sieve surplus≤0.1% of gained material;
(3) material of step (2) gained is sent into compression moulding in mould, with after the temperature of 200 DEG C sintering 6h under nitrogen or argon atmosphere, through naturally cooling to room temperature and get final product.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.

Claims (3)

1. an embedded microprocessor cooling encapsulation material, is characterized in that: be made up of the raw material of following mass fraction: 18 ~ 20 parts, carbon fiber, epoxy acrylic resin 8 ~ 12 parts, 3 ~ 5 parts, ɑ-aluminum oxide, ground barium sulfate 2 ~ 4 parts, beryllium oxide 4 ~ 8 parts, benzophenone tetracarboxylic dianhydride 10 ~ 14 parts, sodium dichromate 4 ~ 8 parts, 2 ~ 6 parts, flyash, sepiolite powder 2 ~ 4 parts, alpha-silicon nitride powders 2 ~ 6 parts, 2 ~ 3 parts, aminoresin, auxiliary agent 4 ~ 5 parts.
2. embedded microprocessor cooling encapsulation material according to claim 1, it is characterized in that: described auxiliary agent is made up of the raw material of following mass parts: Viscotrol C 3 ~ 6 parts, silicon nitride powder 12 ~ 14 parts, aluminium powder 3 ~ 7 parts, N-BUTYL ACETATE 2 ~ 4 parts, iron powder 6 ~ 10 parts, carbon nanotube 4 ~ 8 parts, epoxy resin 2 ~ 6 parts, the preparation method of this auxiliary agent is: be first dissolved in by N-BUTYL ACETATE in appropriate water, be mixed with the aqueous solution that concentration is 3 ~ 8%, and silicon nitride powder is dropped in solution, dispersed with stirring is filtered after evenly soaking 8 ~ 14h, dry, gained material mixes with other remaining component, and be heated to 30 ~ 40 DEG C, room temperature is cooled to after constant temperature dispersed with stirring 1 ~ 3h, material is ground to form 500 ~ 600 order fine powders again, obtain.
3. embedded microprocessor cooling encapsulation material according to claim 1, is characterized in that: described embedded microprocessor cooling encapsulation material, and its preparation method comprises following steps:
(1) first sepiolite powder, alpha-silicon nitride powders, aminoresin are dissolved in 10 ~ 16 times in the water of its total mass number, drop into benzophenone tetracarboxylic dianhydride subsequently, cryodrying after immersion 8 ~ 10h, by for subsequent use after gained material and flyash mixed grinding 4 ~ 5h;
(2), after step (1) gained material and other remaining component being uniformly mixed 1 ~ 2h, dropping into ball-milling processing in ball mill, make square hole sieve surplus≤0.1% of gained material;
(3) material of step (2) gained is sent into compression moulding in mould, with after the temperature of 600 ~ 200 DEG C sintering 4 ~ 6h under nitrogen or argon atmosphere, through naturally cooling to room temperature and get final product.
CN201510929652.8A 2015-12-15 2015-12-15 Embedded microprocessor radiating packaging material Pending CN105348749A (en)

Priority Applications (1)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109485953A (en) * 2018-10-10 2019-03-19 安徽科比电子科技有限公司 A kind of aluminum-housed resistor inner filling material improving heat dissipation performance

Citations (2)

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Publication number Priority date Publication date Assignee Title
CN102086364A (en) * 2010-12-16 2011-06-08 广东风华高新科技股份有限公司 Conductive silver paste for microelectronic packaging and preparation method thereof
JP2011148877A (en) * 2010-01-20 2011-08-04 Ishida Co Ltd Method for producing polyethylene terephthalate film

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2011148877A (en) * 2010-01-20 2011-08-04 Ishida Co Ltd Method for producing polyethylene terephthalate film
CN102086364A (en) * 2010-12-16 2011-06-08 广东风华高新科技股份有限公司 Conductive silver paste for microelectronic packaging and preparation method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
周文英,等: "《导热填料》", 30 April 2014, 国防工业出版社 *
舒友等: "《涂料配方设计与制备》", 31 August 2014, 西南交通大学出版社 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109485953A (en) * 2018-10-10 2019-03-19 安徽科比电子科技有限公司 A kind of aluminum-housed resistor inner filling material improving heat dissipation performance

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Application publication date: 20160224