CN105344960A - Method for increasing casting speed of chamfering crystallizer - Google Patents
Method for increasing casting speed of chamfering crystallizer Download PDFInfo
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- CN105344960A CN105344960A CN201510846854.6A CN201510846854A CN105344960A CN 105344960 A CN105344960 A CN 105344960A CN 201510846854 A CN201510846854 A CN 201510846854A CN 105344960 A CN105344960 A CN 105344960A
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- chamfer crystallizer
- crystallizer
- leptoprosopy
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Abstract
The invention relates to the technical field of continuous casting and particularly relates to a method for increasing the casting speed of a chamfering crystallizer. The method comprises the following steps: controlling the length of a bevel edge on a narrow surface of the chamfering crystallizer to be 20 to 45 mm; controlling the pore diameter of a cooling water hole in the chamfering position of the chamfered crystallizer to be 6 to 8 mm; and increasing the casting speed of the chamfered crystallizer to be higher than 1.4m/min. According to the method for increasing the casting speed of the chamfered crystallizer, provided by the embodiment of the invention, the length of the bevel edge on the narrow surface of the chamfered crystallizer is controlled to be 20 to 45 mm, the pore diameter of the cooling water hole in the position of the chamfer of the chamfered crystallizer is controlled to be 6 to 8 mm, the cooling speed of the narrow surface of the chamfering crystallizer is increased, the cooling effect of the narrow surface of the chamfering crystallizer is enhanced, and on the basis of controlling cross cracks in corners of the casting blank, the casting speed of the chamfered crystallizer is increased to 1.4 m/min above, and the production efficiency is improved.
Description
Technical field
The present invention relates to continuous casting technology field, particularly a kind of method improving chamfer crystallizer Casting speed.
Background technology
In casting process, strand is subject to bending and aligning stress, and strand bight temperature under bidimensional cooling effect is lower simultaneously, is easy to enter the 3rd brittle zone, thus produces a large amount of transverse corner crack line defects.Especially production carbon content at the typical peritectoid of 0.08% ~ 0.20%, sub-peritectoid class micro alloyed steel time, its incidence of Strip edge fault caused by strand transverse corner crack line, generally more than 5%, even reaches more than 80% time serious.At present for solving the mould at narrow copper coin technology that the technological approaches of strand transverse corner crack line is employing band chamfering, this technology is by changing the structure of narrow copper plate, strand bight is made to change two obtuse angles into by the right angle of routine, delay the heat transfer in bight like this, improve temperature and the uniformity in bight, thus effectively control the generation of strand transverse corner crack line.By chamfer crystallizer technology, efficiently solve the strand angle transverse fissure problem of microalloying steel grade, decrease low-carbon hot-rolled steel limit and directly split defect.But in chamfer crystallizer application process, because bight temperature is higher, go out crystallizer base shell thinner, therefore the pulling rate of chamfer crystallizer is always on the low side, limits the performance of casting machine production capacity.How solving under the prerequisite of carbon steel without bight transverse crack problem, improve the Casting speed of chamfer crystallizer cast mild steel, be the technical barrier of puzzlement Ge great steel mill always.
Summary of the invention
The embodiment of the present invention is by providing a kind of method improving chamfer crystallizer Casting speed, solve in prior art the technical problem of Casting speed when can not improve chamfer crystallizer cast mild steel, on the basis controlling strand transverse corner crack line, improve the pulling rate of strand, improve production efficiency.
Embodiments provide a kind of method improving chamfer crystallizer Casting speed, the leptoprosopy chamfering place of described chamfer crystallizer is provided with cooling water hole; The gap of the narrow-face foot roller of described chamfer crystallizer is provided with nozzle, and described nozzle is used for spraying cooling water to described strand; Described method comprises:
The length controlling described chamfer crystallizer leptoprosopy bevel edge is 20 ~ 45mm;
The aperture controlling the described cooling water hole at described chamfer crystallizer chamfering place is 6 ~ 8mm;
The pulling rate of described chamfer crystallizer strand is increased to more than 1.4m/min.
Further, also comprise: controlling described cooling water hole to the spray angle of described strand is 100 ° ~ 110 °.
Further, also comprise: the primary cooling water amount controlling described chamfer crystallizer leptoprosopy is 580 ~ 600L/min.
Further, also comprise: the secondary cooling water controlling described chamfer crystallizer leptoprosopy is 330 ~ 350L/min.
Further, also comprise: the fluctuating temperature scope controlled in described chamfer crystallizer is 0 ~ 5 DEG C.
Further, also comprise: the water flow velocity controlled in wide tank of described chamfer crystallizer is 8.0 ~ 9.0m/s, the water flow velocity controlled in the leptoprosopy tank of described chamfer crystallizer is 7.5 ~ 9.0m/s.
Further, also comprise: the water yield controlling to distribute in the leptoprosopy fillet surface of described chamfer crystallizer accounts for 35% ~ 45% of leptoprosopy total Water.
Further, also comprise: the inflow temperature controlling described chamfer crystallizer is 28 ~ 32 DEG C; Degree of superheat when controlling cast molten steel is 20 ~ 30 DEG C, and the covering slag fusing point controlled in described chamfer crystallizer is less than or equal to 1150 DEG C; The molten steel viscosity controlled in described chamfer crystallizer is less than or equal to 0.140pas, and described molten steel viscosity is the viscosity number at 1300 DEG C.
One or more technical schemes that the embodiment of the present invention provides, at least possess following beneficial effect or advantage:
1, the method for raising chamfer crystallizer Casting speed that provides of the embodiment of the present invention, the length controlling chamfer crystallizer leptoprosopy bevel edge is 20 ~ 45mm, and the aperture of the cooling water hole controlling chamfer crystallizer chamfering place is 6 ~ 8mm, the cooldown rate of chamfer crystallizer leptoprosopy can be promoted, enhance the cooling effect of chamfer crystallizer leptoprosopy, on the basis controlling strand transverse corner crack line, the pulling rate of chamfer crystallizer strand can be increased to more than 1.4m/min, improve production efficiency.
2, the method for raising chamfer crystallizer Casting speed that provides of the embodiment of the present invention, controlled cooling model water hole is 100 ° ~ 110 ° to the spray angle of strand, this spray angle covers strand substantially completely, comprehensive cooling is formed to strand, enhance the cooling effect of strand, thus the pulling rate of chamfer crystallizer strand can be improved.
3, the method for raising chamfer crystallizer Casting speed that provides of the embodiment of the present invention, the primary cooling water amount controlling chamfer crystallizer leptoprosopy is 580 ~ 600L/min, and the secondary cooling water controlling chamfer crystallizer leptoprosopy is 330 ~ 350L/min, the cooling effect of chamfer crystallizer leptoprosopy can be ensured, thus the pulling rate of chamfer crystallizer strand can be improved.
Accompanying drawing explanation
The top view of the chamber crystallizer narrow-surface copper that Fig. 1 provides for the embodiment of the present invention;
Fig. 2 is that the K-K of chamber crystallizer narrow-surface copper in Fig. 1 is to generalized section;
Fig. 3 is that the J-J of chamber crystallizer narrow-surface copper in Fig. 1 is to generalized section;
The method flow diagram of the raising chamfer crystallizer Casting speed that Fig. 4 provides for the embodiment of the present invention.
Detailed description of the invention
The embodiment of the present invention, by providing a kind of method improving chamfer crystallizer Casting speed, solves in prior art the technical problem of Casting speed when can not improve chamfer crystallizer cast mild steel.On the basis controlling strand transverse corner crack line, improve the pulling rate of strand, improve production efficiency.
The method of raising chamfer crystallizer Casting speed provided by the invention, adopts leptoprosopy to be the chamfer crystallizer of double tapered.As shown in Figure 1, chamber crystallizer narrow-surface copper comprises working face, and simultaneously see Fig. 2 and Fig. 3, working face is the curved surface in depression, and working face comprises Part I 11 and Part II 12.Wherein, Part I 11 is the part in the scope of distance crystallizer 200mm ~ 400mm suitable for reading on working face, and Part II 12 is the extraneous part of distance crystallizer 200mm ~ 400mm suitable for reading on working face.Part I 11 comprises 111, two the second curved surface areas, 112, two fillet surface regions 113, first surface region.
See Fig. 1, first surface region 111 is second-degree parabola region.In embodiments of the present invention, the second-degree parabola equation in first surface region 111 is y=ax
2+ b, described x are length of mould, and a is 5.5 × e
-6~ 3.5 × e
-5, b is for comprising shrinkage factor strand size.
See Fig. 1 and Fig. 3, two the second curved surface areas 112 for crown height suitable for reading be the curved surface of 1mm ~ 3mm.Wherein, crown height suitable for reading is specially on a camber line between two end points between line and this camber line ultimate range.
See Fig. 1 and Fig. 2, two fillet surface regions 113 for radius be the curved surface of 5mm ~ 35mm, two fillet surface regions 113 connect relative both sides and two second curved surface areas 112 in first surface region 111 respectively.
See Fig. 1 ~ Fig. 3, Part II 12 and first surface region 111, two the second curved surface areas 112 and two fillet surface regions 113 are connected, and Part II 112 is the linear conical surface.
Chamber crystallizer narrow-surface copper also offers the cooling water channel 20 for cooling work face, distance away from the edge in fillet surface region 113 on cooling water channel 20 and the second curved surface area 112 is 20mm ~ 40mm, is 10mm ~ 30mm with the distance in fillet surface region 113.
The method of the raising chamfer crystallizer Casting speed that the embodiment of the present invention provides, the leptoprosopy chamfering place of chamfer crystallizer is provided with cooling water hole; The gap of the narrow-face foot roller of chamfer crystallizer is provided with nozzle, and nozzle is used for spraying cooling water to strand; See Fig. 4, the method comprises:
The length of step 10, control chamfer crystallizer leptoprosopy bevel edge is 20 ~ 45mm (as 20mm, 33mm or 45mm).
The aperture of the cooling water hole at step 20, control chamfer crystallizer chamfering place is 6 ~ 8mm (as 6mm, 7mm or 8mm).
In above-mentioned steps 10 and step 20, the length controlling chamfer crystallizer leptoprosopy bevel edge is 20 ~ 45mm, and the aperture of the cooling water hole controlling chamfer crystallizer chamfering place is 6 ~ 8mm, the cooldown rate of chamfer crystallizer leptoprosopy can be promoted, enhance the cooling effect of chamfer crystallizer leptoprosopy, on the basis controlling strand transverse corner crack line, the pulling rate of chamfer crystallizer strand can be improved.
Step 30, controlled cooling model water hole are 100 ° ~ 110 ° (as 100 °, 105 ° or 110 °) to the spray angle of strand.
In step 30, controlled cooling model water hole is 100 ° ~ 110 ° to the spray angle of strand, and this spray angle covers strand substantially completely, forms comprehensive cooling to strand, enhances the cooling effect of strand, thus can improve the pulling rate of chamfer crystallizer strand.
The primary cooling water amount of step 40, control chamfer crystallizer leptoprosopy is 580 ~ 600L/min (as 580L/min, 590L/min or 600L/min).
The secondary cooling water of step 50, control chamfer crystallizer leptoprosopy is 330 ~ 350L/min (as 33L/min, 340L/min or 350L/min).
In above-mentioned steps 40 and step 50, the primary cooling water amount controlling chamfer crystallizer leptoprosopy is 580 ~ 600L/min, and the secondary cooling water controlling chamfer crystallizer leptoprosopy is 330 ~ 350L/min, for ensureing the cooling effect of chamfer crystallizer leptoprosopy, thus the pulling rate of chamfer crystallizer strand can be improved.
Step 60, the fluctuating temperature scope controlled in chamfer crystallizer are 0 ~ 5 DEG C (as 0 DEG C, 3 DEG C or 5 DEG C).
Step 70, the water flow velocity controlled in wide tank of chamfer crystallizer are 8.0 ~ 9.0m/s (as 8.0m/s, 8.5m/s or 9.0m/s), and the water flow velocity controlled in the leptoprosopy tank of chamfer crystallizer is 7.5 ~ 9.0m/s (as 7.5m/s, 8.3m/s or 9.0m/s).
Step 80, the water yield controlling to distribute in the leptoprosopy fillet surface of chamfer crystallizer account for 35% ~ 45% (as 35%, 40% or 45%) of leptoprosopy total Water.
The inflow temperature of step 90, control chamfer crystallizer is 28 ~ 32 DEG C (as 28 DEG C, 30 DEG C or 32 DEG C); Degree of superheat when controlling cast molten steel is 20 ~ 30 DEG C (as 20 DEG C, 25 DEG C or 30 DEG C), and the covering slag fusing point controlled in chamfer crystallizer is less than or equal to 1150 DEG C; The molten steel viscosity controlled in chamfer crystallizer is less than or equal to 0.140pas, and the viscosity of molten steel is the viscosity number at 1300 DEG C.
In above-mentioned steps 60, step 70, step 80 and step 90, the fluctuating temperature scope controlled in chamfer crystallizer is 0 ~ 5 DEG C; The water flow velocity controlled in wide tank of chamfer crystallizer is 8 ~ 9m/s, and the water flow velocity controlled in the leptoprosopy tank of chamfer crystallizer is 7.5 ~ 9.0m/s; The water yield controlling to distribute in the leptoprosopy fillet surface of chamfer crystallizer accounts for 35% ~ 45% of leptoprosopy total Water; The inflow temperature controlling chamfer crystallizer is 28 ~ 32 DEG C; Degree of superheat when controlling cast molten steel is 20 ~ 30 DEG C; The covering slag fusing point controlled in chamfer crystallizer is less than or equal to 1150 DEG C; And the molten steel viscosity in control chamfer crystallizer is less than or equal to 0.140pas; Be the technological means realizing raising chamfer crystallizer leptoprosopy cooling effect and adopt, for the pulling rate improving chamfer crystallizer strand provides condition.
Step 100, the pulling rate of chamfer crystallizer strand is increased to more than 1.4m/min.
Be described below in conjunction with the method for specific embodiment to raising chamfer crystallizer Casting speed provided by the invention:
embodiment 1
Utilize the method production carbon content of raising chamfer crystallizer Casting speed provided by the invention be 0.10% typical peritectoid class micro alloyed steel, specifically comprise: the length controlling chamfer crystallizer leptoprosopy bevel edge is 30mm, the aperture controlling the cooling water hole at chamfer crystallizer chamfering place is 7mm, controlled cooling model water hole is 105 ° to the spray angle of strand, the primary cooling water amount controlling chamfer crystallizer leptoprosopy is 585L/min, the secondary cooling water controlling chamfer crystallizer leptoprosopy is 339L/min, the fluctuating temperature scope controlled in chamfer crystallizer is 3 DEG C, the water flow velocity controlled in wide tank of chamfer crystallizer is 8.4m/s, the water yield controlling to distribute in the leptoprosopy fillet surface of chamfer crystallizer accounts for 38% of leptoprosopy total Water, the inflow temperature controlling chamfer crystallizer is 29 DEG C, the pulling rate of chamfer crystallizer strand is increased to 1.5m/min.
embodiment 2
Utilize the method production carbon content of raising chamfer crystallizer Casting speed provided by the invention be 0.15% typical case's sub-peritectoid class micro alloyed steel, specifically comprise: the length controlling chamfer crystallizer leptoprosopy bevel edge is 33mm, the aperture controlling the cooling water hole at chamfer crystallizer chamfering place is 7.2mm, controlled cooling model water hole is 107 ° to the spray angle of strand, the primary cooling water amount controlling chamfer crystallizer leptoprosopy is 592L/min, the secondary cooling water controlling chamfer crystallizer leptoprosopy is 342L/min, the fluctuating temperature scope controlled in chamfer crystallizer is 0.5 DEG C, the water flow velocity controlled in wide tank of chamfer crystallizer is 8.7m/s, the water yield controlling to distribute in the leptoprosopy fillet surface of chamfer crystallizer accounts for 45% of leptoprosopy total Water, the inflow temperature controlling chamfer crystallizer is 31 DEG C, the pulling rate of chamfer crystallizer strand is increased to 1.6m/min.
The method of the raising chamfer crystallizer Casting speed that the embodiment of the present invention provides, at least possesses following beneficial effect:
The method of the raising chamfer crystallizer Casting speed that the embodiment of the present invention provides, the length controlling chamfer crystallizer leptoprosopy bevel edge is 20 ~ 45mm, and the aperture of the cooling water hole controlling chamfer crystallizer chamfering place is 6 ~ 8mm, the cooldown rate of chamfer crystallizer leptoprosopy can be promoted, enhance the cooling effect of chamfer crystallizer leptoprosopy, on the basis controlling strand transverse corner crack line, the pulling rate of chamfer crystallizer strand can be increased to more than 1.4m/min, improve production efficiency.
The method of the raising chamfer crystallizer Casting speed that the embodiment of the present invention provides, controlled cooling model water hole is 100 ° ~ 110 ° to the spray angle of strand, this spray angle covers strand substantially completely, comprehensive cooling is formed to strand, enhance the cooling effect of strand, thus the pulling rate of chamfer crystallizer strand can be improved.
The method of the raising chamfer crystallizer Casting speed that the embodiment of the present invention provides, the primary cooling water amount controlling chamfer crystallizer leptoprosopy is 580 ~ 600L/min, and the secondary cooling water controlling chamfer crystallizer leptoprosopy is 330 ~ 350L/min, the cooling effect of chamfer crystallizer leptoprosopy can be ensured, thus the pulling rate of chamfer crystallizer strand can be improved.
It should be noted last that, above detailed description of the invention is only in order to illustrate technical scheme of the present invention and unrestricted, although with reference to example to invention has been detailed description, those of ordinary skill in the art is to be understood that, can modify to technical scheme of the present invention or equivalent replacement, and not departing from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of right of the present invention.
Claims (8)
1. improve a method for chamfer crystallizer Casting speed, the leptoprosopy chamfering place of described chamfer crystallizer is provided with cooling water hole; The gap of the narrow-face foot roller of described chamfer crystallizer is provided with nozzle, and described nozzle is used for spraying cooling water to described strand; It is characterized in that, described method comprises:
The length controlling described chamfer crystallizer leptoprosopy bevel edge is 20 ~ 45mm;
The aperture controlling the described cooling water hole at described chamfer crystallizer chamfering place is 6 ~ 8mm;
The pulling rate of described chamfer crystallizer strand is increased to more than 1.4m/min.
2. the method improving chamfer crystallizer Casting speed as claimed in claim 1, is characterized in that, also comprise:
Controlling described cooling water hole to the spray angle of described strand is 100 ° ~ 110 °.
3. the method improving chamfer crystallizer Casting speed as claimed in claim 2, is characterized in that, also comprise:
The primary cooling water amount controlling described chamfer crystallizer leptoprosopy is 580 ~ 600L/min.
4. the method improving chamfer crystallizer Casting speed as claimed in claim 3, is characterized in that, also comprise:
The secondary cooling water controlling described chamfer crystallizer leptoprosopy is 330 ~ 350L/min.
5. the method for the raising chamfer crystallizer Casting speed as described in any one of Claims 1 to 4, is characterized in that, also comprise:
The fluctuating temperature scope controlled in described chamfer crystallizer is 0 ~ 5 DEG C.
6. the method for the raising chamfer crystallizer Casting speed as described in any one of Claims 1 to 4, is characterized in that, also comprise:
The water flow velocity controlled in wide tank of described chamfer crystallizer is 8.0 ~ 9.0m/s, and the water flow velocity controlled in the leptoprosopy tank of described chamfer crystallizer is 7.5 ~ 9.0m/s.
7. the method for the raising chamfer crystallizer Casting speed as described in any one of Claims 1 to 4, is characterized in that, also comprise:
The water yield controlling to distribute in the leptoprosopy fillet surface of described chamfer crystallizer accounts for 35% ~ 45% of leptoprosopy total Water.
8. the method improving chamfer crystallizer Casting speed as claimed in claim 1 or 2, is characterized in that, also comprise:
The inflow temperature controlling described chamfer crystallizer is 28 ~ 32 DEG C;
Degree of superheat when controlling cast molten steel is 20 ~ 30 DEG C, and the covering slag fusing point controlled in described chamfer crystallizer is less than or equal to 1150 DEG C;
The molten steel viscosity controlled in described chamfer crystallizer is less than or equal to 0.140pas, and described molten steel viscosity is the viscosity number at 1300 DEG C.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202052915U (en) * | 2011-03-30 | 2011-11-30 | 钢铁研究总院 | Narrow-surface copper plate of chamfer crystallizer for thin slab continuous casting |
| CN202239532U (en) * | 2011-10-13 | 2012-05-30 | 钢铁研究总院 | Cooling and fixing device for chamfered crystallizer narrow-edge copper plate |
| CN103406505A (en) * | 2013-08-14 | 2013-11-27 | 东北大学 | Slab crystallizer taper design method |
| CN104607609A (en) * | 2015-03-05 | 2015-05-13 | 中冶赛迪工程技术股份有限公司 | Secondary cooling nozzle arranging method for improving surface plasticity of casting blank and secondary cooling control method |
| CN204321126U (en) * | 2014-12-03 | 2015-05-13 | 北京首钢股份有限公司 | A kind of chamber crystallizer narrow-surface copper |
| CN104741560A (en) * | 2015-04-03 | 2015-07-01 | 首钢总公司 | Method of reducing cross cracks at niobium-containing steel angle part |
-
2015
- 2015-11-26 CN CN201510846854.6A patent/CN105344960A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202052915U (en) * | 2011-03-30 | 2011-11-30 | 钢铁研究总院 | Narrow-surface copper plate of chamfer crystallizer for thin slab continuous casting |
| CN202239532U (en) * | 2011-10-13 | 2012-05-30 | 钢铁研究总院 | Cooling and fixing device for chamfered crystallizer narrow-edge copper plate |
| CN103406505A (en) * | 2013-08-14 | 2013-11-27 | 东北大学 | Slab crystallizer taper design method |
| CN204321126U (en) * | 2014-12-03 | 2015-05-13 | 北京首钢股份有限公司 | A kind of chamber crystallizer narrow-surface copper |
| CN104607609A (en) * | 2015-03-05 | 2015-05-13 | 中冶赛迪工程技术股份有限公司 | Secondary cooling nozzle arranging method for improving surface plasticity of casting blank and secondary cooling control method |
| CN104741560A (en) * | 2015-04-03 | 2015-07-01 | 首钢总公司 | Method of reducing cross cracks at niobium-containing steel angle part |
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