CN105336871A - Display panel - Google Patents
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- CN105336871A CN105336871A CN201410393640.3A CN201410393640A CN105336871A CN 105336871 A CN105336871 A CN 105336871A CN 201410393640 A CN201410393640 A CN 201410393640A CN 105336871 A CN105336871 A CN 105336871A
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- China
- Prior art keywords
- metal oxide
- oxide layer
- layer
- semiconductor layer
- display floater
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Abstract
The invention relates to a display panel, which comprises a substrate, a thin-film transistor cell, a first metal oxide layer and an isolating layer, wherein the thin-film transistor cell is arranged on the substrate and comprises a gate electrode and a semiconductor layer; the semiconductor layer comprises a carrier channel region; the gate electrode is arranged corresponding to the carrier channel region; the first metal oxide layer is arranged on the semiconductor layer and at least covers the carrier channel region; and the isolating layer contains silicon oxide or aluminum oxide and is arranged between the semiconductor layer and the first metal oxide layer, wherein the penetration rate of a ray, of which the wavelength is 210nm to 350nm, penetrating through the first metal oxide layer is less than 50%.
Description
Technical field
The invention relates to a kind of display floater, espespecially a kind ofly improve the display floater that film crystal pipe unit makes dynamic stability.
Background technology
Along with display technology constantly progress, user is more and more higher for the requirement of electronic product, the trend developments such as all devices are all little towards volume, thickness is thin, lightweight, therefore the display equipment of current main flow on the market develops into liquid crystal display (LCD) or oled device (OLED) by cathode ray tube in the past.
In LCD or OLED, general and the ultraviolet light (UV) of energy gap due to the active layers material of film crystal pipe unit (TFT), blue light is close, therefore, TFT for ultraviolet light and blue light very responsive, (such as irradiating ultraviolet light or blue light in process under ultraviolet light or blue light illumination, or from the ultraviolet light of external environment or blue light), extra electronics electricity hole can be produced to (electronholepair) in TFT, cause on the carrier passage (channel) in TFT and comprise extra carrier (carrier), and then cause TFT electrically to offset, such as grid voltage (Vth) negative bias, leakage current rising etc., more making OLED have light leakage phenomena or shift register (ShiftRegister, S/R), data multiplexer (DataMux) and other drive circuits when dark-state operates cannot the problem such as normal operation.
In view of this, need a kind of display floater improving the problems referred to above of development at present badly, promote the display quality of display device and extend its useful life, expect to bring consumer more stable, higher-quality display effect.
Summary of the invention
Main purpose of the present invention is providing a kind of display floater, and the film crystal pipe unit that can reduce in display device is subject to ultraviolet light or blue light impact, and then effectively promotes stability and the display quality of display device.
For reaching above-mentioned purpose, the invention provides a kind of display floater, comprising: a substrate; One film crystal pipe unit is arranged on this substrate, and this film crystal pipe unit comprises: a gate electrode and semi-conductor layer, and wherein this semiconductor layer comprises a carrier channel region, and this gate electrode is to arranging carrier channel region; One first metal oxide layer, to be arranged on this semiconductor layer and to cover this carrier channel region; And one comprises silica (SiO
x) or alundum (Al2O3) (Al
2o
3) separator, this separator is arranged between this semiconductor layer and this first metal oxide layer; Wherein, the light of wave-length coverage between 210nm to 350nm is less than 50% by the penetrance of this first metal oxide layer.
Accordingly, the present invention utilizes this first metal oxide layer to absorb short wavelength light (such as in process irradiating ultraviolet light or blue light or from the ultraviolet light of external environment or blue light), effective minimizing short wavelength light touches the semiconductor layer of film crystal pipe unit, and then reduce the electrical skew of film crystal pipe unit, and improve the light leakage phenomena of display device when dark-state operates or shift register, data multiplexer and other drive circuits cannot the problem such as normal operation, therefore, display floater of the present invention can provide more stable, higher-quality display effect.
Accompanying drawing explanation
For further illustrating concrete technology contents of the present invention, be described in detail as follows below in conjunction with embodiment and accompanying drawing, wherein:
Fig. 1 is the thin-film transistor cell schematics of a preferred embodiment of the present invention.
Fig. 2 is the thin-film transistor cell schematics of another preferred embodiment of the present invention.
Fig. 3 is the thin-film transistor cell schematics of the present invention's preferred embodiment again.
Fig. 4 A is the exploded view of the film crystal pipe unit of a preferred embodiment of the present invention.
Fig. 4 B is the vertical view of the film crystal pipe unit of a preferred embodiment of the present invention.
Embodiment
Be below, by particular specific embodiment, embodiments of the present invention are described, the personage haveing the knack of this technology can understand other advantages of the present invention and effect easily by content disclosed in the present specification.The present invention is also implemented by other different specific embodiments or is applied, and the every details in this specification also for different viewpoints and application, can carry out various modification and change under not departing from spirit of the present invention.
Embodiment 1
Please refer to Fig. 1, display floater of the present invention comprises: a substrate 1; One film crystal pipe unit, be arranged on this substrate 1, and this film crystal pipe unit comprises: a gate electrode 21, semi-conductor layer 22 and an insulating barrier 26, wherein this semiconductor layer 22 comprises a carrier channel region 221, and this gate electrode 21 is to arranging carrier channel region 221; One first metal oxide layer 32, to be arranged on this semiconductor layer 22 and to cover this carrier channel region 221; And one comprises silica (SiO
x) or alundum (Al2O3) (Al
2o
3) separator 31, this separator 31 is arranged between this semiconductor layer 22 and this first metal oxide layer 32, and wherein, the light of wave-length coverage between 210nm to 350nm is less than 50% by the penetrance of this first metal oxide layer 32.
In the present embodiment, this film crystal pipe unit also can comprise one source pole electrode 23 and a drain electrode 24, this source electrode 23 is be arranged at above this semiconductor layer 22 with this drain electrode 24, and this source electrode 23 is connected with this semiconductor layer 22 with this drain electrode 24, this first metal oxide layer 32 is arranged at this semiconductor layer 22 and between this source electrode 23 and this drain electrode 24; But this first metal oxide layer 32 also can be arranged at above this source electrode 23 and this drain electrode 24 and to cover this source electrode 23 and this drain electrode 24.In addition, in the present embodiment, this first metal oxide layer 32 to be arranged on this semiconductor layer 22 and a sidewall 222 of this semiconductor layer 22 coated; But, this first metal oxide layer 32 only needs at least to cover this carrier channel region 221, one sidewall 222 of visual demand optionally this semiconductor layer 22 coated, if this sidewall 222 of the first metal oxide layer 32 this semiconductor layer 22 coated, then more contribute to the electrical skew of minimizing film crystal pipe unit and improve the light leakage phenomena of display device when dark-state operates.
In the present embodiment, film crystal pipe unit shown in Fig. 1 is a low gate type (bottomgate) film crystal pipe unit, this source electrode 23 is be arranged at above this semiconductor layer 22 with this drain electrode 24, this semiconductor layer 22 is arranged at above this gate electrode 21, and be etch barrier Rotating fields (etchingstoplayerstructure, ESL).Film crystal pipe unit can adopt known thin-film transistor technique to make, therefore does not repeat them here.The structure of film crystal pipe unit simply can be adjusted by those skilled in the art, also can be a back of the body channel etch structure (backchanneletchingstructure as shown in Figure 2, BCE), or be as shown in Figure 3 one on gate type (topgate) film crystal pipe unit.It is worth mentioning that, carrier channel region is mainly arranged in semiconductor layer comparatively near the position of gate electrode, and this position, carrier channel region 221 therefore in Fig. 1 and Fig. 2 is different from this position, carrier channel region 221 in Fig. 3.
In the present embodiment, the composition of this first metal oxide layer 32 is not limited, can be titanium oxide (TiO
x), molybdenum oxide (MoO
x), zinc oxide (ZnO
x), indium oxide (InO
x), tungsten oxide (WO
x), magnesium oxide (MgO
x), calcium oxide (CaO
x), tin oxide (SnO
x), gallium oxide (GaO
x), indium oxide gallium zinc (IGZO) or aluminium oxide (AlO
x).The thickness of this first metal oxide layer is not limited, can be adjusted by those skilled in the art according to actual demand; When the thickness of the first metal oxide layer is 10nm to 100nm, the light of wave-length coverage between 210nm to 350nm is about less than 50% by the penetrance of this first metal oxide layer, when the thickness of the first metal oxide layer is 30nm to 100nm, the light of wave-length coverage between 210nm to 350nm is about less than 30% by the penetrance of this first metal oxide layer, so effectively can stop most ultraviolet, maintain the stability of thin-film transistor cell drive voltage.
In addition, if this separator 31 comprises silica (SiO
x) or alundum (Al2O3) (Al
2o
3), thickness, the area of this separator 31 are not limited, the thickness of separator 31 is preferably 5nm to 20nm, the area of separator 31 is preferably the area being more than or equal to this first metal oxide layer 32, the stability so can effectively avoiding this semiconductor layer 22 to produce oxygen defect and then to affect thin-film transistor cell drive voltage is (when the first oxide layer 32 is oxidized incomplete, the first oxide layer 32 directly contacted with this semiconductor layer 22 can capture the oxygen of semiconductor layer 22 inside, semiconductor layer 22 is made to produce oxygen defect), but the present invention is not limited to this.Refer to Fig. 4 A, 4B, it is exploded view and the vertical view of the film crystal pipe unit of Fig. 1, in order to the clear area comparing separator 31 and the first metal oxide layer 32, Fig. 4 A, 4B omit and illustrate gate electrode 21, source electrode 23, drain electrode 24, second metal oxide layer 33 and insulating barrier 26.As shown in Figure 4 A, separator 31 is provided with the first contact hole 311, first metal oxide layer 32 is provided with the second contact hole 321, namely this first contact hole 311 and this second contact hole 321 are the positions arranging source electrode 23 and drain electrode 24, as shown in Figure 4 B, preferably, the area of separator 31 is the areas being greater than the first metal oxide layer 32.
Moreover, second metal oxide layer 33 also can be arranged at above this source electrode 23 and this drain electrode 24 and to cover this source electrode 23 and this drain electrode 24, more prevent film crystal pipe unit be subject to ultraviolet light or blue light impact, and then promote display floater make dynamic stability.The composition of the second metal oxide layer 33 is not limited, can be identical or different with the first metal oxide layer 32, has in the art and usually knows the visual actual demand of the knowledgeable and select suitable material.
In addition, the substrate that substrate 1 can use the art conventional, as glass substrate, plastic base, silicon substrate and ceramic substrate etc.Moreover the electric conducting material that the material of gate electrode 21, source electrode 23 and drain electrode 24 can use the art conventional respectively, as the electrode material that metal, alloy, metal oxide, metal oxynitride or other the art are conventional; And be preferably metal material, but the present invention is not limited only to this.As for semiconductor layer 22, the semiconductor layer material that the art is conventional also can be adopted, such as indium oxide gallium zinc (IGZO), indium tin zinc oxide ITZO, other metal-oxide semiconductor (MOS)s, amorphous silicon, polysilicon, silicon metal etc.; In addition, the material of insulating barrier 26 can be the art conventional as silicon nitride (SiN
x), silica (SiO
x) or its passivation material combined.But the present invention is not limited to this.
Therefore, from (as shown by arrows) in the incident ray of external environment, wave-length coverage can be absorbed by the first metal oxide layer 32 and the second metal oxide layer 33 in the light (such as in process irradiating ultraviolet light or blue light or from the ultraviolet light of external environment or blue light) of 220nm to 350nm, reduces the impact of described light on semiconductor layer 22.
Graphic other elements eliminated in display floater of Fig. 1, can illustrate as a display panels (LCD) or an organic LED display panel (OLED).Such as, during as display panels, except above-mentioned substrate 1, OTFT unit 2, first metal oxide layer 32 and separator 31, also comprise liquid crystal cells, color optical filter unit and backlight module etc.; Or, during as organic LED display panel, except above-mentioned substrate 1, OTFT unit 2, first metal oxide layer 32 and separator 31, also include OLED and encapsulation unit etc.In addition, have in the art and usually know that the knowledgeable can understand other abridged elements easily, known conventional element all can be applicable to the present invention.
Embodiment 2
Please refer to Fig. 2, the display floater of another preferred embodiment of the present invention comprises: a substrate 1; One film crystal pipe unit, be arranged on this substrate 1, and this film crystal pipe unit comprises: a gate electrode 21, semi-conductor layer 22, one source pole electrode 23, drain electrode 24 and an insulating barrier 26, wherein this semiconductor layer 22 comprises a carrier channel region 221, this carrier channel region 221 is between this source electrode 23 and this drain electrode 24, and this gate electrode 21 is to arranging carrier channel region 221; One first metal oxide layer 32, to be arranged on this semiconductor layer 22 and a sidewall 222 of this semiconductor layer 22 coated, and covers this source electrode 23 and this drain electrode 24; And one comprises silica (SiO
x) or alundum (Al2O3) (Al
2o
3) separator 31, this separator 31 is arranged between this semiconductor layer 22 and this first metal oxide layer 32, and wherein, the light of wave-length coverage between 210nm to 350nm is less than 50% by the penetrance of this first metal oxide layer 32.
In addition, this first metal oxide layer 32 also can be arranged at this semiconductor layer 22 and between this source electrode 23 and this drain electrode 24, and only needs at least to cover this carrier channel region 221, a sidewall 222 of visual demand optionally this semiconductor layer 22 coated.
In the present embodiment, in addition to the foregoing structure, all the other are all identical with embodiment 1, all can be applicable to this in each composition of layer, thickness, area, characteristic etc. described in embodiment 1.
Therefore, from (as shown by arrows) in the incident ray of external environment, wave-length coverage can be absorbed by the first metal oxide layer 32 in the light (such as in process irradiating ultraviolet light or blue light or from the ultraviolet light of external environment or blue light) of 220nm to 350nm, reduces the impact of described light on semiconductor layer 22.
Embodiment 3
Please refer to Fig. 3, the display floater of the present invention's preferred embodiment again comprises: a substrate 1; One film crystal pipe unit, be arranged on this substrate 1, and this film crystal pipe unit comprises: a gate electrode 21, semi-conductor layer 22, insulating barrier 26 and a resilient coating 27, wherein this semiconductor layer 22 comprises a carrier channel region 221, and this gate electrode 21 to be arranged at above this semiconductor layer 22 and to arranging carrier channel region 221; One first metal oxide layer 32, to be arranged on this semiconductor layer 22 and at least to cover this carrier channel region 221; And one comprises silica (SiO
x) or alundum (Al2O3) (Al
2o
3) separator 31, this separator 31 is arranged between this semiconductor layer 22 and this first metal oxide layer 32, and wherein, the light of wave-length coverage between 210nm to 350nm is less than 50% by the penetrance of this first metal oxide layer 32.
In addition, this film crystal pipe unit also comprises one source pole electrode 23 and a drain electrode 24, and this source electrode 23 and this drain electrode 24 are arranged at the top of this semiconductor layer 22, this first metal oxide layer 32 is between this source electrode 23 and this drain electrode 24, and in this first metal oxide layer 32 and this source electrode 23, one second metal oxide layer 33 can be set with the top of this drain electrode 24, this second metal oxide layer 33 covers this source electrode 23 and this drain electrode 24, and a sidewall of visual demand optionally this semiconductor layer 22 coated, so can have preferably ultraviolet shielding effect.
In the present embodiment, in addition to the foregoing structure, all the other are all identical with embodiment 1, all can be applicable to this in each composition of layer, thickness, area, characteristic etc. described in embodiment 1.
Therefore, from (as shown by arrows) in the incident ray of external environment, wave-length coverage can be absorbed by the first metal oxide layer 32 and the second metal oxide layer 33 in the light (such as in process irradiating ultraviolet light or blue light or from the ultraviolet light of external environment or blue light) of 220nm to 350nm, reduces the impact of described light on semiconductor layer 22.
Above-described embodiment is only citing for convenience of description, and the interest field that the present invention advocates from should being as the criterion with described in claim, but not is only limitted to above-described embodiment.
Claims (10)
1. a display floater, comprising:
One substrate;
One film crystal pipe unit, is arranged on this substrate, and this film crystal pipe unit comprises a gate electrode and semi-conductor layer, and wherein this semiconductor layer comprises a carrier channel region, and this gate electrode is to arranging carrier channel region;
One first metal oxide layer, to be arranged on this semiconductor layer and to cover this carrier channel region; And
One separator comprising silica or alundum (Al2O3), this separator is arranged between this semiconductor layer and this first metal oxide layer;
Wherein, the light of wave-length coverage between 210nm to 350nm is less than 50% by the penetrance of this first metal oxide layer.
2. display floater as claimed in claim 1, wherein, the area of this separator is more than or equal to the area of this first metal oxide layer.
3. display floater as claimed in claim 1, wherein, the composition of this first metal oxide layer is titanium oxide, molybdenum oxide, zinc oxide, indium oxide, tungsten oxide, magnesium oxide, calcium oxide, tin oxide, gallium oxide, indium oxide gallium zinc or aluminium oxide.
4. display floater as claimed in claim 1, wherein, the thickness of this first metal oxide layer is 30nm to 100nm.
5. display floater as claimed in claim 1, wherein, the thickness of this separator is 5nm to 20nm.
6. display floater as claimed in claim 1, wherein, this film crystal pipe unit is gate type thin-film transistor unit or a low gate type thin-film transistor unit on.
7. display floater as claimed in claim 1, wherein, this film crystal pipe unit also comprises one source pole electrode and a drain electrode, this source electrode and this drain electrode are arranged at this semiconductor layer, and this first metal oxide layer is arranged at this semiconductor layer and between this source electrode and this drain electrode.
8. display floater as claimed in claim 7, wherein also comprises one second metal oxide layer, and this second metal oxide layer to be arranged at above this source electrode and this drain electrode and to cover this source electrode and this drain electrode.
9. display floater as claimed in claim 1, wherein, this film crystal pipe unit also comprises one source pole electrode and a drain electrode, and this first metal oxide layer to be arranged at above this source electrode and this drain electrode and to cover this source electrode and this drain electrode.
10. display floater as claimed in claim 1, wherein, a sidewall of this first metal oxide layer this semiconductor layer coated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410393640.3A CN105336871A (en) | 2014-08-12 | 2014-08-12 | Display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410393640.3A CN105336871A (en) | 2014-08-12 | 2014-08-12 | Display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105336871A true CN105336871A (en) | 2016-02-17 |
Family
ID=55287276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410393640.3A Pending CN105336871A (en) | 2014-08-12 | 2014-08-12 | Display panel |
Country Status (1)
| Country | Link |
|---|---|
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109003943A (en) * | 2018-06-27 | 2018-12-14 | 武汉华星光电技术有限公司 | A kind of array substrate and preparation method thereof |
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|---|---|---|---|---|
| US7550771B2 (en) * | 2006-04-06 | 2009-06-23 | Mitsubishi Electric Corporation | Thin film transistor, manufacturing method thereof, and active matrix display apparatus |
| CN101789443A (en) * | 2010-03-08 | 2010-07-28 | 友达光电股份有限公司 | Pixel structure and manufacturing method thereof and manufacturing method of electronic device |
| CN102569413A (en) * | 2011-12-13 | 2012-07-11 | 华映视讯（吴江）有限公司 | Thin film transistor and manufacturing method thereof |
| CN102693918A (en) * | 2012-04-12 | 2012-09-26 | 友达光电股份有限公司 | Thin film transistor and method of manufacturing the same |
-
2014
- 2014-08-12 CN CN201410393640.3A patent/CN105336871A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7550771B2 (en) * | 2006-04-06 | 2009-06-23 | Mitsubishi Electric Corporation | Thin film transistor, manufacturing method thereof, and active matrix display apparatus |
| CN101789443A (en) * | 2010-03-08 | 2010-07-28 | 友达光电股份有限公司 | Pixel structure and manufacturing method thereof and manufacturing method of electronic device |
| CN102569413A (en) * | 2011-12-13 | 2012-07-11 | 华映视讯（吴江）有限公司 | Thin film transistor and manufacturing method thereof |
| CN102693918A (en) * | 2012-04-12 | 2012-09-26 | 友达光电股份有限公司 | Thin film transistor and method of manufacturing the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109003943A (en) * | 2018-06-27 | 2018-12-14 | 武汉华星光电技术有限公司 | A kind of array substrate and preparation method thereof |
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Application publication date: 20160217 |