CN105322927B - Method for operating a driver circuit for controlling a field effect transistor structure - Google Patents
Method for operating a driver circuit for controlling a field effect transistor structure Download PDFInfo
- Publication number
- CN105322927B CN105322927B CN201510290130.8A CN201510290130A CN105322927B CN 105322927 B CN105322927 B CN 105322927B CN 201510290130 A CN201510290130 A CN 201510290130A CN 105322927 B CN105322927 B CN 105322927B
- Authority
- CN
- China
- Prior art keywords
- effect transistor
- field effect
- transistor structure
- control signal
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000008186 active pharmaceutical agent Substances 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 8
- 238000012544 monitoring process Methods 0.000 claims description 3
- 230000001419 dependent effect Effects 0.000 claims 1
- 230000001276 controlling effect Effects 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 5
- 230000006378 damage Effects 0.000 description 3
- 241001295925 Gegenes Species 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GWXHLUFZIKVZOE-VIFPVBQESA-N (2s)-2-amino-5-[2-(3,4-dihydroxyphenyl)ethylamino]-5-oxopentanoic acid Chemical group OC(=O)[C@@H](N)CCC(=O)NCCC1=CC=C(O)C(O)=C1 GWXHLUFZIKVZOE-VIFPVBQESA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0072—Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load
Landscapes
- Electronic Switches (AREA)
Abstract
The invention relates to a method for operating a driver circuit (2) for controlling a field effect transistor structure (4), wherein the driver circuit (2) supplies an electrical control signal (I) having a first characteristic variable during normal operationA) For switching a field effect transistor structure (4), wherein a first characteristic variable determines a first switching time of the field effect transistor structure (4) during a switching process, wherein a load circuit (28) of the field effect transistor structure (4) is monitored as a function of an electrical short circuit, and a change is made from a normal operation to a safety operation as a function of the determination of the electrical short circuit, in which safety operation an electrical control signal (I) having a second characteristic variable is supplied by a drive circuit (2)A) Wherein the second characteristic variable determines a second switching time of the field effect transistor structure (4) during the switching process, which second switching time is shorter than the first switching time.
Description
Technical Field
The invention relates to a method for operating a driver circuit for controlling a (ansuern) field effect transistor structure.
Background
The MOSFET driver circuit can drive the connected power MOSFET with a drive current having a fixed current strength and/or by means of a push-pull stage (push/pull-Stufe). That is, the control can also be carried out with a fixed current intensity using a push-pull stage. For switching on or off, current sources with different current directions, i.e. sources for Source (Quelle gegen Source), or sources for voltages of, for example, 5V (Ugs), can be used. Alternatively, the switch may be switched with respect to the source and with respect to 5V.
The adaptation of the ramp rate (slew rate) and thus the switching time of the power MOSFET (authorizing) can be carried out by an external network with, for example, resistors and/or capacitors. The rise rate can be adapted in a slight range by means of the SPI interface of the MOSFET driver circuit.
Due to EMV requirements, work is performed in many application cases, for example in pulse width modulation operation (PMW operation)The switching process of the rate MOSFET must be very slow (
Or
). In particular in the case of systems with high system voltages (for example in the case of commercial vehicles with a constant dc voltage of, for example, 24V), this leads to destruction of the power MOSFET in the event of an electrical short circuit. In the case of CV applications in motor vehicles, the intensity of the current flowing through the power MOSFET may rise up to 200A in the event of an electrical short circuit, depending on the cable harness, the battery state, etc., within about 1 μ S. In this case, the power MOSFET is irreparably destroyed with the required off-time of approximately 25 μ S.
Disclosure of Invention
The object of the invention is therefore to indicate a way of how the switching-off time can be shortened in the event of an electrical short.
According to the invention, a method for operating a driver circuit for controlling a field effect transistor structure and such a driver circuit are proposed. Advantageous embodiments are the subject matter of the invention and of the following description.
Advantages of the invention
The invention makes full use of: in response to the detection of an electrical short, a characteristic variable of a control signal for switching the field effect transistor arrangement is changed in a control loop of the field effect transistor arrangement after a changeover from normal operation to safe operation, which leads to an accelerated switching of the field effect transistor arrangement. The characteristic variable may be the electrical power, the current intensity or the voltage level of the control signal. It is thereby possible to charge or discharge the input capacitance of the field effect transistor structure in the event of a detected electrical short circuit, in an accelerated manner compared to normal operation, during switching, in order to protect the field effect transistor structure. The switching time of the field effect transistor structure can thus be shortened by simple means, so that irreparable damage of the field effect transistor structure does not occur. Switching off (i.e. not conducting current) of the field effect transistor structure is preferably accelerated, but the invention in principle also relates to switching on (i.e. conducting current).
According to one embodiment, in order to detect an electrical short, a voltage between a drain terminal and a source terminal of the field effect transistor structure is detected and the detected voltage is compared with a threshold value. Thereby realizing that: an electrical short can be detected with certainty by simple and reliable means. In particular, the method according to the invention for operating a driver circuit for controlling a field effect transistor structure, wherein the driver circuit supplies an electrical control signal having a first characteristic variable for switching the field effect transistor structure in normal operation, wherein the first characteristic variable determines a first switching time of the field effect transistor structure during a switching process, has the steps: monitoring a load loop of the field effect transistor structure based on the electrical short; and switching from normal operation to safe operation in dependence on the determination of the electrical short, in which safe operation the drive circuit supplies an electrical control signal having a second characteristic variable, wherein the second characteristic variable determines a second switching time of the field effect transistor structure during the switching process, the second switching time being shorter than the first switching time, the first characteristic variable being a first current intensity of the electrical control signal and the second characteristic variable being a second current intensity of the electrical control signal which is greater than the first current intensity, wherein the current intensity of the control signal is adjusted by operating a control unit of the drive circuit, which control unit is designed to supply control signals having at least two different current intensities, whose current source is controlled in order to supply the control signals having the at least two different current intensities.
According to a further embodiment, the first characteristic variable is a first current level of the electrical actuating signal and the second characteristic variable is a second current level of the electrical actuating signal. The second current intensity is higher than the first current intensity in value. This results in an accelerated charging or discharging of the input capacitance of the field effect transistor arrangement without subjecting the components of the field effect transistor arrangement and/or the driver circuit to increased voltages.
According to a further embodiment, the current strength of the control signal is set by controlling a current source of the driver circuit, wherein the current source is designed to provide the control signal with at least two different current strengths. Thereby realizing that: the drive circuit has a particularly simple construction.
According to a further embodiment, the driver circuit has a resistor unit having a first current path having a first ohmic resistance and a second current path having a second ohmic resistance, wherein the first ohmic resistance is not equal to the second ohmic resistance, and wherein the control signal can be conducted via the first circuit path or the second circuit path by means of a switching device of the resistor unit in order to provide the control signal having the first current strength and the second current strength. This makes it possible, for example, to use a particularly simple current source which only supplies a control current having a single current intensity.
According to a further embodiment, the characteristic variable of the control signal is changed by a factor of 10 to 1000, in particular by a factor of 50 to 200, in the event of a change from normal operation to safe operation as a function of the detection of an electrical short. Thereby realizing that: the switching time can be reduced during the switching-off process, for example, to a value of 1 μ s to 25 μ s.
According to a further embodiment, the driver circuit is operated in a push-pull operation. The driver circuit therefore has two components which operate in opposite ways, only one of the two components being active. The operating resistor is not required in the case of a drive circuit which operates in the push-pull mode. This achieves a significantly higher efficiency compared to other switching principles.
In addition, the invention also relates to a drive circuit for controlling the field effect transistor structure. The driver circuit is designed to provide an electrical control signal having a first characteristic variable for controlling the field effect transistor structure during normal operation, wherein the first characteristic variable determines a first switching time of the field effect transistor structure during an (off) switching process of the field effect transistor structure. The driver circuit is also designed to switch from a normal operation to a safety operation as a function of the detection of an electrical short circuit in the load circuit of the field effect transistor arrangement, in which safety operation the driver circuit supplies an electrical actuating signal having a second characteristic variable for changing the switching time of the field effect transistor arrangement, wherein the first characteristic variable differs from the second characteristic variable. The second characteristic variable determines a second switching time of the field effect transistor structure during the switching process, which is shorter than the first switching time, wherein the first characteristic variable is a first current intensity of the electrical control signal and the second characteristic variable is a second current intensity of the electrical control signal, which is greater than the first current intensity, the drive circuit having a control unit, which is designed to provide control signals having at least two different current intensities, wherein a current source of the control unit is controlled in order to provide control signals having the at least two different current intensities. With this drive circuit, the input capacitance of the field effect transistor structure can be charged or discharged in the event of a detected electrical short circuit in an accelerated manner compared to normal operation during the (off) switching process in order to protect the field effect transistor structure. With such a drive circuit, it is possible, for example, to operate power MOSFETs in motor vehicles and at the same time to meet EMV requirements in the field of motor vehicles. All PWM controlled output stages can be controlled with this drive circuit, since EMV requirements can be met with a relatively long switching time. The drive circuit can be used, for example, to actuate Lambda sensor heaters (Lambda-Sondenheizer), injection valves for gasoline or gas, metering units (ZME) or pressure regulating valves (DRV).
According to one embodiment, the driver circuit has a current source which is designed to provide a control signal having at least two different current strengths. The drive circuit can therefore have a particularly simple construction.
According to a further embodiment, the driver circuit has a resistor unit having a first current path with a first ohmic resistance and a second current path with a second ohmic resistance. The first ohmic resistance is not equal to the second ohmic resistance, wherein the control signal can be conducted via the first current path or the second current path by means of the switching device of the resistor unit in order to provide the control signal having the first characteristic variable and the second characteristic variable. The driver circuit can thus have, for example, a particularly simple current source which supplies only a control current having a single current intensity.
Further advantages and embodiments of the invention emerge from the description and the drawing.
It is understood that the features mentioned above and those yet to be explained below can be used not only in the respectively stated combination but also in other combinations or individually without departing from the scope of the invention.
The invention is schematically illustrated in the drawings according to an embodiment and is described in detail below with reference to the drawings.
Drawings
Fig. 1 shows a first exemplary embodiment of a driver circuit according to a particularly preferred embodiment of the invention in a schematic representation.
Fig. 2 shows a second example of a driver circuit according to a particularly preferred embodiment of the invention in a schematic diagram.
Detailed Description
Fig. 1 shows a schematic diagram of a driver circuit 2 for operating a field effect transistor arrangement 4.
In the present embodiment, the field effect transistor structure 4 is a power MOSFET. Power MOSFETs (english: power MOSFETs) are specialized versions of metal oxide semiconductor field effect transistors that are optimized for the turn-on and turn-off of large currents and voltages (to several hundred amperes and to about 1000 volts, with a component volume of about 1 cubic centimeter). Unlike the present embodiment, the field effect transistor structure 4 may also be part of a cascade circuit composed of a field effect transistor and a bipolar transistor. The field-effect transistor structure 4 may be a part of an IGBT (insulated-gate bipolar transistor).
In the present embodiment, the field effect transistor structure 4 operates as a power switch. The field effect transistor structure 4 is looped into the control loop 26 and into the load loop 28. The load circuit 28 has a load resistor 6, for example an actuator of a motor vehicle, a drain terminal D and a source terminal S of the field effect transistor configuration 4. The control circuit 26 electrically conductively connects the gate terminal G of the field effect transistor structure 4 to the first terminal 32 of the driver circuit 2, wherein the second terminal 34 of the driver circuit 2 is electrically conductively connected to the source terminal S of the field effect transistor structure 4.
Furthermore, the field effect transistor structure 4 has a first parasitic capacitance C between the drain terminal D and the gate terminal GgdA second parasitic capacitance C between the gate terminal G and the source terminal SgsAnd a third parasitic capacitance C between the drain terminal D and the source terminal Sds. Parasitic capacitance CgdAnd CgsInput capacitance C forming a field effect transistor structure 4einWith a magnitude corresponding to at least two parasitic capacitances CgdAnd CgsAnd (3) the sum:
the switching on and off of the field effect transistor structure 4 requires an input capacitance CeinRecharging (Umladen). The required duration of the recharging determines the required switching time of the field effect transistor structure 4.
The drive circuit 2 is driven by providing a control signal IATo induce an input capacitance CeinTo recharge (c). In the present embodiment, the control signal IAIs the steering current.
The driver circuit 2 is in the present exemplary embodiment designed as an ASIC. In addition, the drive circuit 2 is configured as a push-pull stage in the present embodiment. The push-pull stage thus allows a push-pull operation of the driver circuit 2. The drive circuit has in the present exemplary embodiment a voltage detection unit 8, an evaluation unit 10 and a control unit 12. In addition, the driver circuit has an SPI bus interface 30.
The driver circuit 2, the voltage detection unit 8, the evaluation unit 10, the control unit 12 and the SPI bus interface 30 can have hardware and/or software components.
The voltage detection unit 8 is configured to detect a drain-source voltage U applied between the drain terminal D and the source terminal SDS。
The evaluation unit 10 is designed to measure the drain-source voltage UDSIs compared with a threshold value S. For this purpose, the evaluation unit 10 has a comparator 14 in the present exemplary embodiment. The size of the threshold value S can be predefined, for example, by the SPI bus interface 30.
The control unit 12 is designed in the present exemplary embodiment to provide a control signal I having at least two different current strengthsA. For this purpose, the control unit 12 has a current source 16. The control unit 12 supplies a control signal I with a first characteristic variable during normal operationAAnd in safe operation, providing a control signal I with a second characteristic variableA. In this embodiment, the first characteristic parameter is the control signal IAAnd the second characteristic quantity is the control signal IAWherein the current level is lower in normal operation than in safe operation. For example, in normal operation, the first control signal IAMay be the second control signal IA1/10 to 1/1000, in particular 1/50 to 1/200.
If the load resistor 6 is to be supplied with a pulse-width-modulated current, for example, the driver circuit 2 supplies a control signal I having a first current strength during normal operationAThe field effect transistor structure 4 is operated such that the drain-source section between the drain terminal D and the source terminal S alternately becomes electrically conductive and electrically off. In this case, the input capacitance CeinRecharged with a large time constant. The drain-source voltage U is thus generated during the switching-on and switching-off processes of the field effect transistor structure 4DSIs relatively large in normal operation.
If the drain-source region is electrically conductive, i.e. the field effect transistor structure 4 is switched on, and an (in particular thermal) electrical short-circuit occurs in the load circuit 28, this leads to the drain-source voltage UDSAnd (4) rising. Here, a thermal short circuit is understood to mean that the load is short-circuited and the current through the switching element rises. Whereas a cold short is understood to mean that the switching element is bridged and the current through the switch drops towards zero (gegen null sine)。
Drain source voltage UDSIs detected by the voltage detection unit 8 and transmitted to the analysis unit 10. The comparator 14 detects the drain-source voltage UDSIs compared to a threshold S. If the detected drain-source voltage UDSExceeds the threshold value S, the comparator 14 generates a control signal which causes the control unit 12 to generate a control signal from the control signal I having the first current strengthATo a safe operation with the control signal IA having the second current strength. For this purpose, the comparator 14 of the evaluation unit 10 is operatively connected to the control unit 12.
The driver circuit 2 thus provides the control signal I with the second current strength during safe operationAThe second current intensity is greater than the first current intensity during normal operation. This results in an input capacitance CeinAccelerated recharging compared to normal operation. The drain-source voltage U is thus generated during the switching-off process of the field effect transistor structure 4 in the event of an electrical shortDSIs much smaller than in normal operation due to the much larger steering currents. Thus, the field effect transistor structure 4 is switched off before the field effect transistor structure 4 is subjected to irreparable damage.
The drive circuit 2 shown in fig. 2 differs from the embodiment shown in fig. 1 by: the control unit 12 has a voltage source 16', which voltage source 16' supplies a control signal having a fixed voltage level.
In addition, the drive circuit 2 shown in fig. 2 is distinguished from the drive circuit 2 shown in fig. 1 by: the control unit 12 has a resistor unit 18 with a first current path I and with a second current path II. A first resistance member 22 is assigned to the first current path I and a second resistance member 24 is assigned to the second current path II, wherein the resistance of the first resistance member 22 is greater than the resistance of the second resistance member 24.
The resistor unit 18 furthermore has a switching device 20, such as a semiconductor commutator, with which the control signal can be conducted via the first current path I in normal operation and via the second current path II in safety operation. For this purpose, the comparator 14 of the evaluation unit 10 is operatively connected to the switching device 20. The control signal can thus be varied by means of the resistance unit 18 in order to shorten the rise rate and thus the switching time of the field effect transistor structure 4.
Unlike the present exemplary embodiment according to fig. 1 and 2, the method can also be used for HSS (high-side switching) applications, in which the field-effect transistor structure 4 is connected with its drain terminal D directly to the electrical supply voltage, and the load resistor 6 is connected between the source terminal S and ground.
Claims (9)
1. Method for operating a driver circuit (2) for controlling a field effect transistor structure (4), wherein the driver circuit (2) supplies an electrical control signal (I) having a first characteristic variable during normal operationA) For switching a field effect transistor structure (4), wherein a first characteristic variable determines a first switching time of the field effect transistor structure (4) during a switching process, the method having the steps of:
monitoring a load loop (28) of the field effect transistor structure (4) as a function of the electrical short; and
upon determination of an electrical short-circuit, a changeover is made from normal operation to safety operation, in which the drive circuit (2) supplies an electrical control signal (I) having a second characteristic variableA) Wherein the second characteristic variable determines a second switching time of the field effect transistor structure (4) during the switching process, which second switching time is shorter than the first switching time,
wherein the first characteristic variable is an electrical control signal (I)A) And the second characteristic quantity is an electrical operating signal (I)A) A second current intensity greater than the first current intensity,
wherein the control signal (I) is adjusted by controlling a control unit (12) of the drive circuit (2)A) Wherein the control unit (12) is designed to provide a control signal (I) having at least two different current strengthsA），
Wherein the control unit is controlled(12) So as to provide a steering signal (I) having said at least two different current strengthsA）。
2. Method according to claim 1, wherein the switching means (20) are operated so as to direct the operating signal (I) via a first current path (I) or a second current path (II) of the resistance unit (18)A) For providing a control signal (I) having said at least two different current strengthsA) Wherein the resistance of the first current path (I) is not equal to the resistance of the second current path (II).
3. Method according to claim 1, wherein the signal (I) is to be manipulatedA) Is changed by a factor of 10 to 1000.
4. Method according to claim 3, wherein the signal (I) is to be manipulatedA) Is changed by a factor of 50 to 200.
5. The method according to one of claims 1 to 4, wherein monitoring a load loop (28) of the field effect transistor structure (4) on the basis of the electrical short comprises: applying a drain-source voltage (U) of the field effect transistor structure (4)DS) Compared to a threshold value.
6. Method according to one of claims 1 to 4, wherein the driver circuit (2) is operated in push-pull operation.
7. Drive circuit (2) for controlling a field effect transistor structure (4), wherein the drive circuit (2) is designed to provide an electrical control signal (I) having a first characteristic variable during normal operationA) For controlling the field effect transistor structure (4), wherein the first characteristic variable determines a first switching time of the field effect transistor structure (4) during a switching process of the field effect transistor structure (4), wherein the driver circuit (2) is designed to be dependent on a load loop of the field effect transistor structure (4)(28) From a normal operation into a safety operation in which the drive circuit (2) supplies an electrical control signal (I) having a second characteristic variableA) Wherein the second characteristic variable determines a second switching time of the field effect transistor structure (4) during the switching process, which second switching time is shorter than the first switching time,
wherein the first characteristic variable is an electrical control signal (I)A) And the second characteristic quantity is an electrical operating signal (I)A) A second current intensity greater than the first current intensity,
wherein the drive circuit (2) has a control unit (12), the control unit (12) being designed to provide control signals (I) having at least two different current strengthsA），
Wherein a current source (16) of the control unit (12) is controlled in order to provide a control signal (I) having the at least two different current strengthsA）。
8. The driver circuit (2) as claimed in claim 7, wherein the control unit (12) has a voltage source (16 '), the voltage source (16') having a resistance unit (18), the resistance unit (18) having a first current path (I) and a second current path (II) with different resistances, and wherein the control signal (I) can be conducted via the first current path (I) or the second current path (II) by means of the switching means (20)A) In order to provide a control signal (I) having a first current level and a second current levelA）。
9. The driver circuit (2) as claimed in one of claims 7 to 8, the driver circuit (2) having a voltage detection unit (8) for determining an electrical short in a load circuit (28) of the field effect transistor structure (4).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102014210342.8 | 2014-06-02 | ||
| DE102014210342.8A DE102014210342A1 (en) | 2014-06-02 | 2014-06-02 | Method for operating a driver circuit for driving a field effect transistor structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105322927A CN105322927A (en) | 2016-02-10 |
| CN105322927B true CN105322927B (en) | 2021-05-28 |
Family
ID=54481312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510290130.8A Active CN105322927B (en) | 2014-06-02 | 2015-06-01 | Method for operating a driver circuit for controlling a field effect transistor structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN105322927B (en) |
| DE (1) | DE102014210342A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1934785A (en) * | 2002-12-20 | 2007-03-21 | 松下电器产业株式会社 | Gate driver, motor driving device including the gate driver, and apparatus equipped with the motor driving device |
| CN103348257A (en) * | 2011-02-07 | 2013-10-09 | 英飞凌科技奥地利有限公司 | Method for driving a transistor and drive circuit |
| WO2014046238A1 (en) * | 2012-09-24 | 2014-03-27 | トヨタ自動車株式会社 | Semiconductor driving device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2777307B2 (en) * | 1992-04-28 | 1998-07-16 | 株式会社東芝 | Short circuit protection circuit |
| JPH09285104A (en) * | 1996-04-12 | 1997-10-31 | Fuji Electric Co Ltd | Drive unit of voltage control type semiconductor device |
| EP0814564A1 (en) * | 1996-06-20 | 1997-12-29 | ANSALDO INDUSTRIA S.p.A. | Electronic switching circuit with reduction of switching transients |
| US7479770B2 (en) * | 2005-04-28 | 2009-01-20 | Texas Instruments Incorporated | System and method for driving a power field-effect transistor (FET) |
| MY157390A (en) * | 2011-05-12 | 2016-06-15 | Nissan Motor | Switching circuit and semiconductor module |
| CN102594102A (en) * | 2012-02-22 | 2012-07-18 | 杭州飞仕得科技有限公司 | IGBT (insulated gate bipolar translator) driving power supply applicable to multilevel converter and driving method thereof |
-
2014
- 2014-06-02 DE DE102014210342.8A patent/DE102014210342A1/en active Pending
-
2015
- 2015-06-01 CN CN201510290130.8A patent/CN105322927B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1934785A (en) * | 2002-12-20 | 2007-03-21 | 松下电器产业株式会社 | Gate driver, motor driving device including the gate driver, and apparatus equipped with the motor driving device |
| CN103348257A (en) * | 2011-02-07 | 2013-10-09 | 英飞凌科技奥地利有限公司 | Method for driving a transistor and drive circuit |
| WO2014046238A1 (en) * | 2012-09-24 | 2014-03-27 | トヨタ自動車株式会社 | Semiconductor driving device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105322927A (en) | 2016-02-10 |
| DE102014210342A1 (en) | 2015-12-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10749217B2 (en) | Power source device | |
| US8497728B2 (en) | Electronic control apparatus having switching element and drive circuit | |
| CN111435148B (en) | Gate level triggered desaturation blanking | |
| CN107302351B (en) | Driving device and inductive load driving device | |
| US9735767B2 (en) | Electronic control apparatus having switching element and drive circuit | |
| US8610487B2 (en) | Electronic device with switching element driven by control voltage | |
| US20080247108A1 (en) | Load drive device | |
| CN105281572A (en) | High side switch with current limit feedback | |
| CN108575108B (en) | Control circuit | |
| EP3104527A2 (en) | Semiconductor device | |
| US20220029526A1 (en) | Device and method for discharging a dc link capacitor | |
| US11799472B2 (en) | Drive circuit | |
| CN104617933B (en) | Circuit for reducing power consumption of power stage and method thereof | |
| CN108879627B (en) | Electronic module, motor vehicle and method for limiting input current during switch-on | |
| CN105322927B (en) | Method for operating a driver circuit for controlling a field effect transistor structure | |
| KR102045404B1 (en) | Smart pra pre-charging system | |
| US10826486B2 (en) | Switching driving circuit, switching circuit, and power supply device | |
| CN110880926A (en) | Switch drive circuit and electric device | |
| CN107425705B (en) | Counter potential bleeder circuit for DC driver | |
| JP2019198171A (en) | Power supply device | |
| JP2011030361A (en) | Driver of power switching element | |
| JP2016092962A (en) | Current limiting circuit | |
| KR102434048B1 (en) | Electronic relay device | |
| CN110603700B (en) | Electrical circuit for discharging a capacitor, electrical system and motor vehicle comprising such a discharge circuit | |
| CN114514681A (en) | DCDC converter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |