CN105322797A - Improved half-bridge topology circuit - Google Patents
Improved half-bridge topology circuit Download PDFInfo
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- CN105322797A CN105322797A CN201410348849.8A CN201410348849A CN105322797A CN 105322797 A CN105322797 A CN 105322797A CN 201410348849 A CN201410348849 A CN 201410348849A CN 105322797 A CN105322797 A CN 105322797A
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Abstract
The invention discloses an improved half-bridge topology circuit which comprises a dynamic magnetic balance adjusting circuit, an isolated magnet ring driving circuit and half-bridge circuits in serial connection successively. The improved half-bridge topology circuit can be used to overcome disadvantages in the prior art, solve the problems in magnetic balance and driving synchronization of serial and parallel connection of the half-bridge circuit, and realize coordinated work of multiple half-bridge circuits.
Description
Technical field
The present invention relates to a kind of power circuit, especially a kind of half-bridge topology circuit of improvement.
Background technology
High-frequency direct-current power supply is widely used in wind power generation, the industry such as new forms of energy and industrial vehicle, and half-bridge circuit is the most frequently used topological circuit of high-frequency direct-current power supply.Along with continuous maturation and the growth of industry, small size, powerful DC power supply are development trends.Half-bridge circuit is limited to the problems such as components and parts and cannot satisfies the demands.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of half-bridge topology circuit of improvement, can solve the deficiencies in the prior art, successfully overcomes half-bridge circuit series-parallel magnetic balance problem and drives nonsynchronous problem, achieves multiple half-bridge circuit collaborative work.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows.
A half-bridge topology circuit for improvement, is characterized in that: comprise the dynamic magnetic balance regulating circuit, isolation magnet ring drive circuit and the half-bridge circuit that are sequentially connected in series.
As preferably, described dynamic magnetic balance regulating circuit comprises IR2213 chip, No. 10 pins of IR2213 chip connect INH signal input part, No. 12 pins connect INL signal input part, No. 7 pins of IR2213 chip export OUTA drive singal, and No. 1 pin exports OUTB drive singal, and No. 9 pins and No. 3 pins of IR2213 chip are connected to digital power, No. 9 pins of IR2213 chip are also connected to DD end by the 7th electric capacity, and No. 2 pins of IR2213 chip are connected directly to DD end;
The first electric capacity and the second electric capacity is in series with between HVDC end and DD hold, first resistance simultaneously, second resistance, 5th resistance and the 4th resistant series are between HVDC end and DO are held, and keep parallel relationship with the first electric capacity and the second electric capacity, the intermediate point of the first electric capacity and the second electric capacity is by the 3rd resistance, second resistance and the 7th resistance are connected to the positive input of a LM324 chip, the intermediate point of the second resistance and the 5th resistance is by the 8th resistance, 9th resistance and the tenth resistance are connected to the inverting input of a LM324 chip, the inverting input of the one LM324 chip is connected to reference voltage end by the 11 resistance, the positive power source terminal of the one LM324 chip is connected to DD end by the 3rd electric capacity, the negative power end of the one LM324 chip is connected directly to DD end, the positive input of the one LM324 chip is connected to the output of a LM324 chip by the 12 resistance, the output of the one LM324 chip is connected to the positive input of the 2nd LM324 chip by the 13 resistance, the reverse input end of the 2nd LM324 chip is connected to reference voltage end, the positive input of the 2nd LM324 chip is connected to the output of the 2nd LM324 chip by the 4th electric capacity, the output of the 2nd LM324 chip is connected to No. 10 pins of IR2213 chip by the 15 resistance and the 14 resistance, the intermediate point of the 15 resistance and the 14 resistance is connected to DD end by the 5th electric capacity, output the 16 resistance of the 2nd LM324 chip is connected to the positive input of the 3rd LM324 chip, the reverse input end of the 3rd LM324 chip is connected to reference voltage end, the positive input of the 3rd LM324 chip is connected to the output of the 3rd LM324 chip by the 17 resistance, the output of the 3rd LM324 chip is connected to No. 12 pins of IR2213 chip by the 18 resistance and the 19 resistance, the intermediate point of the 18 resistance and the 19 resistance is connected to DD end by the 6th electric capacity.
As preferably, described isolation magnet ring drive circuit comprises two isolation magnet ring driver modules in parallel, the input of two isolation magnet ring driver modules is connected to No. 7 pins and No. 1 pin of IR2213 chip respectively, for receiving OUTA drive singal and OUTB drive singal, each isolation magnet ring driver module comprises the first transformer group, the centre tap of the first transformer group primary side connects high level, one end of first transformer group primary side is connected to DD end by the first rectifier diode, the positive pole of the first rectifier diode is connected to DD end, the other end is connected to the drain electrode of the first enhancement mode N raceway groove isolated gate FET, the source electrode of the first enhancement mode N raceway groove isolated gate FET is connected to DD end, the grid of the first enhancement mode N raceway groove isolated gate FET connects the input of the first current-limiting resistance as isolation magnet ring driver module, the secondary side of the first transformer group is divided into two windings, each winding is parallel with two interlaminated resistances, and one end of winding is by the second rectifier diode as the first output, and the other end of winding is as the second output.
As preferably, described half-bridge circuit comprises two half-bridge circuit modules be connected on the second transformer group primary side two windings, half-bridge circuit module comprises the filter capacitor of two series connection and the second enhancement mode N raceway groove isolated gate FET of two series connection, be connected in parallel between filter capacitor and the second enhancement mode N raceway groove isolated gate FET, drain electrode one end of second enhancement mode N raceway groove isolated gate FET is connected to HVDC end, the grid of the second enhancement mode N raceway groove isolated gate FET passes through connection second current-limiting resistance as first input end, second current-limiting resistance both sides have been arranged in parallel the 3rd current-limiting resistance and the 3rd rectifier diode, the negative pole of the 3rd rectifier diode is towards first input end, two filter capacitors are respectively arranged with the second input, the two ends of the second transformer group first side winding are connected between two filter capacitors and between two the second enhancement mode N raceway groove isolated gate FETs respectively, the two ends of the second siding ring of the second transformer group are connected to filter inductance as output respectively by the 4th rectifier diode, the centre tap ground connection of the second siding ring of the second transformer group.
The beneficial effect adopting technique scheme to bring is:
Dynamic magnetic balance circuit solves single even multiple half-bridge circuit connection in series-parallel design and is limited to magnetic balance, cannot be used in the circuit design defect of large power supply, make half-bridge circuit go for more broad range.
Magnet ring isolated drive circuit ensure that the synchronism that multiple half-bridge series-parallel circuit drives, for the series-parallel driving synchronism of multiple half-bridge circuit provides guarantee.
Dynamic magnetic balance circuit does multiple half-bridge circuit connection in series-parallel main circuit and ensures, magnet ring isolated drive circuit does the driving synchronism guarantee of multiple half-bridge series-parallel circuit.Under above two circuit ensure multiple half-bridge series-parallel circuits are designed to the power supply of more high power density, the power supply of wider input voltage provides solution.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of dynamic magnetic balance regulating circuit in the present invention's embodiment.
Fig. 2 is the circuit diagram of isolating magnet ring drive circuit in the present invention's embodiment.
Fig. 3 is the circuit diagram of half-bridge circuit in the present invention's embodiment.
Embodiment
The standardized element used in the present invention all can commercially, be not described in detail in this.
With reference to Fig. 1-3, the present invention's embodiment comprises the dynamic magnetic balance regulating circuit, isolation magnet ring drive circuit and the half-bridge circuit that are sequentially connected in series.
Described dynamic magnetic balance regulating circuit comprises IR2213 chip, No. 10 pins of IR2213 chip connect INH signal input part, No. 12 pins connect INL signal input part, No. 7 pins of IR2213 chip export OUTA drive singal, No. 1 pin exports OUTB drive singal, No. 9 pins and No. 3 pins of IR2213 chip are connected to digital power, and No. 9 pins of IR2213 chip are also connected to DD end by the 7th electric capacity, and No. 2 pins of IR2213 chip are connected directly to DD end;
The first electric capacity and the second electric capacity is in series with between HVDC end and DD hold, first resistance simultaneously, second resistance, 5th resistance and the 4th resistant series are between HVDC end and DO are held, and keep parallel relationship with the first electric capacity and the second electric capacity, the intermediate point of the first electric capacity and the second electric capacity is by the 3rd resistance, second resistance and the 7th resistance are connected to the positive input of a LM324 chip, the intermediate point of the second resistance and the 5th resistance is by the 8th resistance, 9th resistance and the tenth resistance are connected to the inverting input of a LM324 chip, the inverting input of the one LM324 chip is connected to reference voltage end by the 11 resistance, the positive power source terminal of the one LM324 chip is connected to DD end by the 3rd electric capacity, the negative power end of the one LM324 chip is connected directly to DD end, the positive input of the one LM324 chip is connected to the output of a LM324 chip by the 12 resistance, the output of the one LM324 chip is connected to the positive input of the 2nd LM324 chip by the 13 resistance, the reverse input end of the 2nd LM324 chip is connected to reference voltage end, the positive input of the 2nd LM324 chip is connected to the output of the 2nd LM324 chip by the 4th electric capacity, the output of the 2nd LM324 chip is connected to No. 10 pins of IR2213 chip by the 15 resistance and the 14 resistance, the intermediate point of the 15 resistance and the 14 resistance is connected to DD end by the 5th electric capacity, output the 16 resistance of the 2nd LM324 chip is connected to the positive input of the 3rd LM324 chip, the reverse input end of the 3rd LM324 chip is connected to reference voltage end, the positive input of the 3rd LM324 chip is connected to the output of the 3rd LM324 chip by the 17 resistance, the output of the 3rd LM324 chip is connected to No. 12 pins of IR2213 chip by the 18 resistance and the 19 resistance, the intermediate point of the 18 resistance and the 19 resistance is connected to DD end by the 6th electric capacity.
Described isolation magnet ring drive circuit comprises two isolation magnet ring driver modules in parallel, the input of two isolation magnet ring driver modules is connected to No. 7 pins and No. 1 pin of IR2213 chip respectively, for receiving OUTA drive singal and OUTB drive singal, each isolation magnet ring driver module comprises the first transformer group, the centre tap of the first transformer group primary side connects high level, one end of first transformer group primary side is connected to DD end by the first rectifier diode, the positive pole of the first rectifier diode is connected to DD end, the other end is connected to the drain electrode of the first enhancement mode N raceway groove isolated gate FET, the source electrode of the first enhancement mode N raceway groove isolated gate FET is connected to DD end, the grid of the first enhancement mode N raceway groove isolated gate FET connects the input of the first current-limiting resistance as isolation magnet ring driver module, the secondary side of the first transformer group is divided into two windings, each winding is parallel with two interlaminated resistances, and one end of winding is by the second rectifier diode as the first output, and the other end of winding is as the second output.
Described half-bridge circuit comprises two half-bridge circuit modules be connected on the second transformer group primary side two windings, half-bridge circuit module comprises the filter capacitor of two series connection and the second enhancement mode N raceway groove isolated gate FET of two series connection, be connected in parallel between filter capacitor and the second enhancement mode N raceway groove isolated gate FET, drain electrode one end of second enhancement mode N raceway groove isolated gate FET is connected to HVDC end, the grid of the second enhancement mode N raceway groove isolated gate FET passes through connection second current-limiting resistance as first input end, second current-limiting resistance both sides have been arranged in parallel the 3rd current-limiting resistance and the 3rd rectifier diode, the negative pole of the 3rd rectifier diode is towards first input end, two filter capacitors are respectively arranged with the second input, the two ends of the second transformer group first side winding are connected between two filter capacitors and between two the second enhancement mode N raceway groove isolated gate FETs respectively, the two ends of the second siding ring of the second transformer group are connected to filter inductance as output respectively by the 4th rectifier diode, the centre tap ground connection of the second siding ring of the second transformer group.
Wherein, first resistance R1 ~ the tenth resistance R10 is 180K Ω, 11 resistance R11 and the 12 resistance R12 is 6.8K Ω, 13 resistance R13 is 10K Ω, 14 resistance R14 is 15K Ω, 15 resistance R15 is 560 Ω, 16 resistance R16, 17 resistance R17 and the 18 resistance R18 is 180K Ω, 19 resistance R19 is 15K Ω, first electric capacity C1 and the second electric capacity C2 is 680 μ F, 3rd electric capacity C3 is 100pF, 4th electric capacity C4, 5th electric capacity C5 and the 6th electric capacity C6 is 10nF, 7th electric capacity C7 is 100pF, digital power and high level are 15V, first current-limiting resistance is 10 ohm, interlaminated resistance is 180K ohm, filter capacitor is 680 μ F, second current-limiting resistance is 33 ohm, 3rd current-limiting resistance is 10 ohm.
The present embodiment can meet output rated power 9000w, work reliable and stable under meeting long-time high-temperature condition.Mentality of designing of the present invention can not only be applied to the present embodiment, and also can be applicable in 2 half-bridge series connection or 2 half-bridge circuit of connecting again in parallel, principle is all consistent.Certainly, the type selecting of each device is can be not necessarily identical, even, the device that some are auxiliary can also be increased, improve the characteristic of some devices in former figure, such as withstand voltage, capacitance etc.Main innovation and technological difficulties have three:
One, the half-bridge connection in series-parallel of taking innovating formula designs, and this design solves the restricted situation of conventional half-bridge.
Two, adopt the dynamic magnetic balance circuit of independent design, the dynamic magnetic balance circuit of independent design well ensure that multiple half-bridge circuit is operated within the scope of magnetic balance the trouble and worry solving half-bridge and use always.
Three, take magnet ring isolated drive circuit to design, one of the difficult point and emphasis of multiple half-bridge circuit connection in series-parallel design are exactly the synchronism driven, and the design of magnet ring isolated drive circuit well solves this problem.
Compared with prior art, power density is larger for the present embodiment.Under equal volume condition, power output increases about 40%.Different input voltage environment can be adapted to, meet some special occasions, the demand in the place that voltage is higher, such as colliery, iron ore, the places such as the industrial and mining enterprises that scope range of the fluctuation of voltage is larger.
More than show and describe general principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; what describe in above-described embodiment and specification just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.Application claims protection range is defined by appending claims and equivalent thereof.
Claims (4)
1. the half-bridge topology circuit improved, is characterized in that: comprise the dynamic magnetic balance regulating circuit, isolation magnet ring drive circuit and the half-bridge circuit that are sequentially connected in series.
2. the half-bridge topology circuit of improvement according to claim 1, it is characterized in that: described dynamic magnetic balance regulating circuit comprises IR2213 chip, No. 10 pins of IR2213 chip connect INH signal input part, No. 12 pins connect INL signal input part, No. 7 pins of IR2213 chip export OUTA drive singal, No. 1 pin exports OUTB drive singal, No. 9 pins and No. 3 pins of IR2213 chip are connected to digital power, No. 9 pins of IR2213 chip are also connected to DD end by the 7th electric capacity, and No. 2 pins of IR2213 chip are connected directly to DD end;
The first electric capacity and the second electric capacity is in series with between HVDC end and DD hold, first resistance simultaneously, second resistance, 5th resistance and the 4th resistant series are between HVDC end and DO are held, and keep parallel relationship with the first electric capacity and the second electric capacity, the intermediate point of the first electric capacity and the second electric capacity is by the 3rd resistance, second resistance and the 7th resistance are connected to the positive input of a LM324 chip, the intermediate point of the second resistance and the 5th resistance is by the 8th resistance, 9th resistance and the tenth resistance are connected to the inverting input of a LM324 chip, the inverting input of the one LM324 chip is connected to reference voltage end by the 11 resistance, the positive power source terminal of the one LM324 chip is connected to DD end by the 3rd electric capacity, the negative power end of the one LM324 chip is connected directly to DD end, the positive input of the one LM324 chip is connected to the output of a LM324 chip by the 12 resistance, the output of the one LM324 chip is connected to the positive input of the 2nd LM324 chip by the 13 resistance, the reverse input end of the 2nd LM324 chip is connected to reference voltage end, the positive input of the 2nd LM324 chip is connected to the output of the 2nd LM324 chip by the 4th electric capacity, the output of the 2nd LM324 chip is connected to No. 10 pins of IR2213 chip by the 15 resistance and the 14 resistance, the intermediate point of the 15 resistance and the 14 resistance is connected to DD end by the 5th electric capacity, output the 16 resistance of the 2nd LM324 chip is connected to the positive input of the 3rd LM324 chip, the reverse input end of the 3rd LM324 chip is connected to reference voltage end, the positive input of the 3rd LM324 chip is connected to the output of the 3rd LM324 chip by the 17 resistance, the output of the 3rd LM324 chip is connected to No. 12 pins of IR2213 chip by the 18 resistance and the 19 resistance, the intermediate point of the 18 resistance and the 19 resistance is connected to DD end by the 6th electric capacity.
3. the half-bridge topology circuit of improvement according to claim 2, it is characterized in that: described isolation magnet ring drive circuit comprises two isolation magnet ring driver modules in parallel, the input of two isolation magnet ring driver modules is connected to No. 7 pins and No. 1 pin of IR2213 chip respectively, for receiving OUTA drive singal and OUTB drive singal, each isolation magnet ring driver module comprises the first transformer group, the centre tap of the first transformer group primary side connects high level, one end of first transformer group primary side is connected to DD end by the first rectifier diode, the positive pole of the first rectifier diode is connected to DD end, the other end is connected to the drain electrode of the first enhancement mode N raceway groove isolated gate FET, the source electrode of the first enhancement mode N raceway groove isolated gate FET is connected to DD end, the grid of the first enhancement mode N raceway groove isolated gate FET connects the input of the first current-limiting resistance as isolation magnet ring driver module, the secondary side of the first transformer group is divided into two windings, each winding is parallel with two interlaminated resistances, and one end of winding is by the second rectifier diode as the first output, and the other end of winding is as the second output.
4. the half-bridge topology circuit of improvement according to claim 3, it is characterized in that: described half-bridge circuit comprises two half-bridge circuit modules be connected on the second transformer group primary side two windings, half-bridge circuit module comprises the filter capacitor of two series connection and the second enhancement mode N raceway groove isolated gate FET of two series connection, be connected in parallel between filter capacitor and the second enhancement mode N raceway groove isolated gate FET, drain electrode one end of second enhancement mode N raceway groove isolated gate FET is connected to HVDC end, the grid of the second enhancement mode N raceway groove isolated gate FET passes through connection second current-limiting resistance as first input end, second current-limiting resistance both sides have been arranged in parallel the 3rd current-limiting resistance and the 3rd rectifier diode, the negative pole of the 3rd rectifier diode is towards first input end, two filter capacitors are respectively arranged with the second input, the two ends of the second transformer group first side winding are connected between two filter capacitors and between two the second enhancement mode N raceway groove isolated gate FETs respectively, the two ends of the second siding ring of the second transformer group are connected to filter inductance as output respectively by the 4th rectifier diode, the centre tap ground connection of the second siding ring of the second transformer group.
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| CN201410348849.8A CN105322797A (en) | 2014-07-22 | 2014-07-22 | Improved half-bridge topology circuit |
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| CN201410348849.8A CN105322797A (en) | 2014-07-22 | 2014-07-22 | Improved half-bridge topology circuit |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101258782A (en) * | 2005-09-07 | 2008-09-03 | 胜美达集团株式会社 | Discharge lamp drive control circuit |
| CN101630914A (en) * | 2009-08-26 | 2010-01-20 | 广州金升阳科技有限公司 | Stabilized voltage supply convertor with long service life and low electromagnetic interference |
| CN101771360A (en) * | 2010-03-05 | 2010-07-07 | 北京嘉昌机电设备制造有限公司 | Dynamic magnetic balance regulating circuit in switching power supply and switching power supply |
| US20110255315A1 (en) * | 2010-04-16 | 2011-10-20 | Tdk-Lambda Corporation | Switching power supply device |
| CN102447395A (en) * | 2011-12-30 | 2012-05-09 | 深圳麦格米特电气股份有限公司 | Multi-level balanced circuit and achievement method thereof |
-
2014
- 2014-07-22 CN CN201410348849.8A patent/CN105322797A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101258782A (en) * | 2005-09-07 | 2008-09-03 | 胜美达集团株式会社 | Discharge lamp drive control circuit |
| CN101630914A (en) * | 2009-08-26 | 2010-01-20 | 广州金升阳科技有限公司 | Stabilized voltage supply convertor with long service life and low electromagnetic interference |
| CN101771360A (en) * | 2010-03-05 | 2010-07-07 | 北京嘉昌机电设备制造有限公司 | Dynamic magnetic balance regulating circuit in switching power supply and switching power supply |
| US20110255315A1 (en) * | 2010-04-16 | 2011-10-20 | Tdk-Lambda Corporation | Switching power supply device |
| CN102447395A (en) * | 2011-12-30 | 2012-05-09 | 深圳麦格米特电气股份有限公司 | Multi-level balanced circuit and achievement method thereof |
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Application publication date: 20160210 |