CN105304471B - A kind of method of use carbon ball in gallium nitride internal production pore layer - Google Patents

A kind of method of use carbon ball in gallium nitride internal production pore layer Download PDF

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CN105304471B
CN105304471B CN201510675151.1A CN201510675151A CN105304471B CN 105304471 B CN105304471 B CN 105304471B CN 201510675151 A CN201510675151 A CN 201510675151A CN 105304471 B CN105304471 B CN 105304471B
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gallium nitride
layer
carbon ball
sucrose
substrate
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CN105304471A (en
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王再恩
张嵩
齐成军
程红娟
徐永宽
陈建丽
兰飞飞
李宝珠
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CETC 46 Research Institute
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02444—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

The present invention relates to a kind of use carbon ball gallium nitride internal production pore layer method, using MOCVD device Sapphire Substrate the thick epitaxial layer of gallium nitride of 5 microns of surface extension one layer, then liquid sucrose is coated uniformly on epitaxial layer of gallium nitride, by 900 DEG C of high annealings, sucrose layer is carbonized, form uniform carbon layers of balls, during subsequent HVPE epitaxial growth of gallium nitride, nano level uniform pores formation pore layer occurs in carbon ball layer position, have the technical effect that this pore layer can effectively reduce the structural strength of corresponding site gallium nitride, improve the possibility that gallium nitride is broken stripping from substrate, reach the purpose for preparing gallium nitride monocrystal substrate, manufacturing process is simple, it is practical.

Description

A kind of method of use carbon ball in gallium nitride internal production pore layer
Technical field
It is more particularly to a kind of to use carbon ball in gallium nitride the present invention relates to the method in gallium nitride internal production pore layer The method that portion makes pore layer.
Background technology
Gallium nitride material is due to its distinctive band gap width and excellent photoelectric characteristic, in visible light wave range light-emitting diodes Manage, high frequency, high-power electronic device, the opto-electronic device such as ultraviolet detector has a wide range of applications, therefore also turn into width The material of very attractive in bandgap semiconductor material.But, it is lining to restrict one of development key factor of nitride-based semiconductor Bottom material.Usual gallium nitride device uses the foreign substrate material manufactures such as Si, Al2O3, SiC.These backing materials are different degrees of There is crystal structure mismatch, lattice constant mismatch, the factor such as coefficient of thermal expansion mismatch causes film quality decline, entered And the performance of device is drastically influence, so needing homogeneity gallium nitride monocrystal substrate.Gallium nitride single crystal is typically grown in others On substrate, to obtain self-standing gan monocrystalline most important is exactly to remove former substrate, and the most frequently used skill of former substrate is removed at present It, from lift-off technology, is that, in gallium nitride internal production pore layer, pore layer can reduce gallium nitride from the key of lift-off technology that art, which is, Structural strength, gallium nitride single crystal is broken stripping from substrate in temperature-fall period.
The content of the invention
In view of gallium nitride single crystal produced problem during substrate desquamation in the prior art, the present invention provides one kind and used Carbon ball is in the method for gallium nitride internal production pore layer, and concrete technical scheme is,
The solution have the advantages that, nano level uniform pores occur in carbon ball layer position, effectively reduce corresponding site The structural strength of gallium nitride, improves the possibility that gallium nitride is broken stripping from substrate, reaches and prepare gallium nitride monocrystal substrate Purpose, technique is simple, easily operated.
Brief description of the drawings
Fig. 1 is the process chart of the present invention.
Embodiment
A kind of use carbon ball is in the method for gallium nitride internal production pore layer, and processing step is,
A) 2 inches of single sapphires for throwing substrate are chosen, it is with ethanol solution that its surface clean is clean；
b）Using MOCVD device in one layer of gallium nitride of sapphire substrate surface extension, MO-GaN substrates, the μ of thickness about 5 are obtained m；
c）Sucrose is heated to 200 DEG C in heating furnace, melting state is reached；
d）MO-GaN substrates are placed on self-control sol evenning machine, sol evenning machine pallet is heated to 230 ~ 300 DEG C；
e）The sucrose of melting state is dropped on MO-GaN substrates, it is 4000 to set rotating speed, and rotational time 15 seconds makes sucrose It is coated uniformly on MO-GaN substrates, thickness is 2 μm, is then naturally cooling to room temperature；
f）The substrate coated after sucrose is put into high-temperature annealing furnace, 900 DEG C of annealing 10min under high pure nitrogen protection, with After be naturally cooling to room temperature, be made carbon ball layer；
g）The MO-GaN substrates for being covered with carbon ball layer are put into gallium nitride HVPE growth furnaces, under the conditions of 1020 DEG C, with 500ml/min speed is passed through NH3, HCl is passed through with 20ml/min speed, progress epitaxial layer of gallium nitride growth, 500 μm of thickness, There are nano level uniform pores and forms pore layer in the carbon ball layer of epitaxial layer of gallium nitride bottom surface.

Claims (1)

1. a kind of use carbon ball is in the method for gallium nitride internal production pore layer, it is characterised in that：Processing step is,
A) 2 inches of single sapphires for throwing substrate are chosen, it is with ethanol solution that its surface clean is clean；
b）Using MOCVD device in one layer of gallium nitride of sapphire substrate surface extension, MO-GaN substrates, 5 μm of thickness are obtained；
c）Sucrose is heated to 200 DEG C in heating furnace, melting state is reached；
d）MO-GaN substrates are placed on self-control sol evenning machine, sol evenning machine pallet is heated to 230 ~ 300 DEG C；
e）The sucrose of melting state is dropped on MO-GaN substrates, it is 2000 ~ 4000 to set rotating speed, and rotational time 10 ~ 15 seconds makes Sucrose is coated uniformly on MO-GaN substrates, and thickness is 1 ~ 2 μm, is then naturally cooling to room temperature；
f）The substrate coated after sucrose is put into high-temperature annealing furnace, 900 DEG C of annealing 10min under high pure nitrogen protection, then certainly Room temperature so is cooled to, carbon ball layer is made；
g）The MO-GaN substrates for being covered with carbon ball layer are put into gallium nitride HVPE growth furnaces, under the conditions of 1020 DEG C, with 500ml/ Min speed is passed through NH3, HCl is passed through with 20ml/min speed, carries out epitaxial layer of gallium nitride growth, 500 μm of thickness, in gallium nitride There are nano level uniform pores and forms pore layer in the carbon ball layer of epitaxial layer bottom surface.
CN201510675151.1A 2015-10-19 2015-10-19 A kind of method of use carbon ball in gallium nitride internal production pore layer Active CN105304471B (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1378237A (en) * 2001-03-27 2002-11-06 日本电气株式会社 Semiconductor substrate made from III family nitride
CN101060102A (en) * 2006-04-21 2007-10-24 日立电线株式会社 Nitride semiconductor substrate, method of making the same and epitaxial substrate for nitride semiconductor light emitting device
CN101488475A (en) * 2009-02-20 2009-07-22 中国科学院上海微系统与信息技术研究所 Implementing method for self-stripping thick film gallium nitride from substrate sapphire
CN102828239A (en) * 2012-08-24 2012-12-19 东莞市中镓半导体科技有限公司 Method for preparing self-supporting substrate from gallium nitride single-crystal materials by self-separating by aid of defect and stress removal technology
CN103043646A (en) * 2012-12-21 2013-04-17 浙江大学 Method for preparing small solid carbon ball and carbon ball prepared thereby
CN103114332A (en) * 2011-11-17 2013-05-22 北京大学 Method for preparing gallium nitride monocrystal substrate by surface modification auto-separation
CN103663450A (en) * 2013-12-19 2014-03-26 中国科学院过程工程研究所 Carbon microspheres with high specific surface area and preparation method for carbon microspheres with high specific surface area

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6709513B2 (en) * 2001-07-04 2004-03-23 Fuji Photo Film Co., Ltd. Substrate including wide low-defect region for use in semiconductor element

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1378237A (en) * 2001-03-27 2002-11-06 日本电气株式会社 Semiconductor substrate made from III family nitride
CN101060102A (en) * 2006-04-21 2007-10-24 日立电线株式会社 Nitride semiconductor substrate, method of making the same and epitaxial substrate for nitride semiconductor light emitting device
CN101488475A (en) * 2009-02-20 2009-07-22 中国科学院上海微系统与信息技术研究所 Implementing method for self-stripping thick film gallium nitride from substrate sapphire
CN103114332A (en) * 2011-11-17 2013-05-22 北京大学 Method for preparing gallium nitride monocrystal substrate by surface modification auto-separation
CN102828239A (en) * 2012-08-24 2012-12-19 东莞市中镓半导体科技有限公司 Method for preparing self-supporting substrate from gallium nitride single-crystal materials by self-separating by aid of defect and stress removal technology
CN103043646A (en) * 2012-12-21 2013-04-17 浙江大学 Method for preparing small solid carbon ball and carbon ball prepared thereby
CN103663450A (en) * 2013-12-19 2014-03-26 中国科学院过程工程研究所 Carbon microspheres with high specific surface area and preparation method for carbon microspheres with high specific surface area

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