CN105301907A - Positive photoresist composition - Google Patents
Positive photoresist composition Download PDFInfo
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- CN105301907A CN105301907A CN201510781718.3A CN201510781718A CN105301907A CN 105301907 A CN105301907 A CN 105301907A CN 201510781718 A CN201510781718 A CN 201510781718A CN 105301907 A CN105301907 A CN 105301907A
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Abstract
The invention discloses a positive photoresist composition. The composition comprises 0.4-0.55 parts of an organosilicon flatting agent, 23-25 parts of a solvent, 2-3 parts of an optical active substance and 16-18 parts of resin. The solvent contains tetrahydrofuran, 2-acetoxy-1-methoxypropane and dimethyl acetamide. The prepared positive photoresist has a higher photosensitive speed, and is suitable for large scale popularization and application.
Description
Technical field
The invention belongs to Other substrate materials technical field, be specifically related to a kind of positive-tone photo glue composition.
Background technology
Photoresist also known as photoresist, the photosensitive mixing material be made up of photosensitive resin, sensitizer and solvent three kinds of principal ingredients.After illumination, can there is photocuring reaction in exposure region in photosensitive resin, make the physical property of this material soon, and particularly significant change occurs for dissolubility, affinity etc.Through suitable solvent process, dissolve soluble part, obtain required image.The technical sophistication of photoresist, kind is more.According to its chemical reaction mechanism and development principle, negative photoresist and positive photoresist two class can be divided.What form insoluble material after illumination is negative photoresist; Otherwise be insoluble to some solvent, what become soluble substance after illumination is positive photoresist.Utilize this performance, by photoresist making coatings, the circuitous pattern needed for just etching at silicon chip surface.
Photoresist consist of resin, the bonding agent of different materials in photoresist, give and the machinery of photoresist and chemical property (as adhesiveness, film thickness, thermal stability etc.); Emulsion, emulsion is to luminous energy generation photochemical reaction; Solvent, keeps the liquid condition of photoresist, makes it to have good mobility; Adjuvant, in order to change some characteristic of photoresist, adds coloring agent etc. as improved photoresist that reflection occurs.Negative photoresist: resin is polyisoprene, a kind of natural rubber; Solvent is dimethylbenzene; Emulsion is a kind of photosensitizer discharging nitrogen after overexposure, and the free radical of generation is formed crosslinked between rubber molecule.Thus become and be insoluble to developer solution.Negative photoresist causes bubble to rise in exposure region by solvent; During exposure, photoresist easily reacts with nitrogen and suppresses to be cross-linked.Positive photoresist: resin is a kind of phenolic aldehyde formaldehyde being called linear phenolic resin, provides the adhesiveness of photoresist, chemical resistance, and when not having dissolution inhibitor, linear phenolic resin can be dissolved in developer solution; Emulsion is light-sensitive compound, and modal is diazo naphthoquinone, and before exposure, diazo naphthoquinone is a kind of strong dissolution inhibitor, reduces the dissolution velocity of resin.After uv-exposure, diazo naphthoquinone is chemolysis in the photoresist, becomes solubility enhancing agent, significantly improves the solubleness factor to 100 in developer solution or higher.This exposure reaction can produce carboxylic acid in diazo naphthoquinone, and its solubleness in developer solution is very high.Positive photoresist has good contrast, so the figure generated has good resolution.
In existing technology, photoresist is after the pyroprocessing of rear baking, and film surface is easy to shrink, and makes photoresist crawling.When being applied to gene order-checking like this, photoresist is coated on chip, can affect accuracy of detection, causes result inaccurate.
Summary of the invention
An object of the present invention is a kind of positive-tone photo glue composition, described composition comprises: polyether-modified organosilicon levelling agent, solvent, optical active substance and resin.
Described composition is by weight being polyether-modified organosilicon levelling agent 0.4-0.55 part, solvent 23-25 part, optical active substance 2-3 part and resin 16-18 part.
Described polyether-modified organosilicon levelling agent is ETA-735.
Described solvent is tetrahydrofuran, 1-Methoxy-2-propyl acetate and dimethyl acetamide.
The weight ratio of described tetrahydrofuran, 1-Methoxy-2-propyl acetate and dimethyl acetamide is (4-6): (14-16): (4-7).
The weight ratio of described tetrahydrofuran, 1-Methoxy-2-propyl acetate and dimethyl acetamide is 4:16:5.
Described optical active substance is diazonium naphthoquinone sulphonate.
Described resin is 2-hydroxyethylacrylate methyl esters, trimethylol-propane trimethacrylate and n-BMA, and the weight ratio of 2-hydroxyethylacrylate methyl esters, trimethylol-propane trimethacrylate and n-BMA is 3:1:6.
With the addition of polyether-modified organosilicon levelling agent ETA-735 in positive photoresist in the present invention, coat on chip, the even film layer obtained, level and smooth.The photoresist prepared is applicable to coating on the genetic chip in gene order-checking very much, makes testing result precision high, can carry out large-scale industrial production.Positive photoresist in the present invention has very high film speed, and the image resolution ratio that photoetching obtains is high, is very suitable for large-scale promotion application.
Embodiment
embodiment 1
Composition is ETA-7350.4 part, tetrahydrofuran 4 parts, 1-Methoxy-2-propyl acetate 16 parts, dimethyl acetamide 5 parts, diazonium naphthoquinone sulphonate 2 parts, 2-hydroxyethylacrylate methyl esters 4 parts, trimethylol-propane trimethacrylate 2 parts and n-BMA 12 parts by weight.
embodiment 2
Composition is ETA-7350.55 part, tetrahydrofuran 4 parts, 1-Methoxy-2-propyl acetate 14 parts, dimethyl acetamide 4 parts, diazonium naphthoquinone sulphonate 2 parts, 2-hydroxyethylacrylate methyl esters 3 parts, trimethylol-propane trimethacrylate 3 parts and n-BMA 10 parts by weight.
embodiment 3
Composition is ETA-7350.5 part, tetrahydrofuran 4 parts, 1-Methoxy-2-propyl acetate 14 parts, dimethyl acetamide 7 parts, diazonium naphthoquinone sulphonate 3 parts, 2-hydroxyethylacrylate methyl esters 5 parts, trimethylol-propane trimethacrylate 8 parts and n-BMA 4 parts by weight.
embodiment 4
Composition is ETA-7350.45 part, tetrahydrofuran 4.5 parts, 1-Methoxy-2-propyl acetate 16 parts, dimethyl acetamide 6.5 parts, diazonium naphthoquinone sulphonate 3 parts, 2-hydroxyethylacrylate methyl esters 5 parts, trimethylol-propane trimethacrylate 8 parts and n-BMA 4 parts by weight.
embodiment 5
Composition is ETA-7350.48 part, tetrahydrofuran 5 parts, 1-Methoxy-2-propyl acetate 14 parts, dimethyl acetamide 5 parts, diazonium naphthoquinone sulphonate 3 parts, 2-hydroxyethylacrylate methyl esters 9 parts, trimethylol-propane trimethacrylate 4 parts and n-BMA 4 parts by weight.
embodiment 6
Composition is ETA-7350.42 part, tetrahydrofuran 5 parts, 1-Methoxy-2-propyl acetate 15 parts, dimethyl acetamide 5 parts, diazonium naphthoquinone sulphonate 2.5 parts, 2-hydroxyethylacrylate methyl esters 8 parts, trimethylol-propane trimethacrylate 5 parts and n-BMA 4 parts by weight.
embodiment 7
Composition is ETA-7350.4 part, tetrahydrofuran 4.5 parts, 1-Methoxy-2-propyl acetate 14.5 parts, dimethyl acetamide 5.5 parts, diazonium naphthoquinone sulphonate 2 parts, 2-hydroxyethylacrylate methyl esters 6 parts, trimethylol-propane trimethacrylate 6 parts and n-BMA 5 parts by weight.
comparative example
Composition is ETA-7350.4 part, tetrahydrofuran 10 parts, 1-Methoxy-2-propyl acetate 2 parts, dimethyl acetamide 0.5 part, diazonium naphthoquinone sulphonate 2 parts, 2-hydroxyethylacrylate methyl esters 4 parts, trimethylol-propane trimethacrylate 2 parts and n-BMA 4 parts by weight.
experimental example
Photoresist of the present invention is coated in chip substrates as liquid coating composition, and heating, except desolventizing, until coating is no longer sticked together, by photomask exposure under activation is irradiated, with alkaline-based developer development, forms camegraph.Measure the film speed of embodiment 1-embodiment 4 and comparative example photoresist after the production immediately, result is as table 1:
As shown in Table 1, the film speed of the obtained photoresist of embodiment of the present invention 1-embodiment 4 is significantly higher than comparative example, and its quality smooth uniform, quality is high.
Above-mentioned detailed description is illustrating for one of them possible embodiments of the present invention, and this embodiment is also not used to limit the scope of the claims of the present invention, and the equivalence that all the present invention of disengaging do is implemented or changed, and all should be contained in the scope of technical solution of the present invention.
Claims (7)
1. a positive-tone photo glue composition, is characterized in that, described composition comprises: polyether-modified organosilicon levelling agent, solvent, optical active substance and resin.
2. positive-tone photo glue composition as claimed in claim 1, is characterized in that, described composition is by weight being polyether-modified organosilicon levelling agent 0.4-0.55 part, solvent 23-25 part, optical active substance 2-3 part and resin 16-18 part.
3. positive-tone photo glue composition as claimed in claim 1, it is characterized in that, described polyether-modified organosilicon levelling agent is ETA-735.
4. positive-tone photo glue composition as claimed in claim 1, it is characterized in that, described solvent is tetrahydrofuran, 1-Methoxy-2-propyl acetate and dimethyl acetamide.
5. positive-tone photo glue composition as claimed in claim 1, it is characterized in that, the weight ratio of described tetrahydrofuran, 1-Methoxy-2-propyl acetate and dimethyl acetamide is (4-6): (14-16): (4-7).
6. positive-tone photo glue composition as claimed in claim 1, it is characterized in that, described optical active substance is diazonium naphthoquinone sulphonate.
7. positive-tone photo glue composition as claimed in claim 1, it is characterized in that, described resin is 2-hydroxyethylacrylate methyl esters, trimethylol-propane trimethacrylate and n-BMA.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510781718.3A CN105301907A (en) | 2015-11-16 | 2015-11-16 | Positive photoresist composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510781718.3A CN105301907A (en) | 2015-11-16 | 2015-11-16 | Positive photoresist composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105301907A true CN105301907A (en) | 2016-02-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510781718.3A Pending CN105301907A (en) | 2015-11-16 | 2015-11-16 | Positive photoresist composition |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018205601A1 (en) * | 2017-05-12 | 2018-11-15 | 京东方科技集团股份有限公司 | Photoresist composition and preparation method therefor, and oled array substrate and preparation method therefor |
| WO2020125520A1 (en) * | 2018-12-19 | 2020-06-25 | 江苏艾森半导体材料股份有限公司 | Negative photoresist used for semiconductor encapsulation process |
-
2015
- 2015-11-16 CN CN201510781718.3A patent/CN105301907A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018205601A1 (en) * | 2017-05-12 | 2018-11-15 | 京东方科技集团股份有限公司 | Photoresist composition and preparation method therefor, and oled array substrate and preparation method therefor |
| US11392030B2 (en) | 2017-05-12 | 2022-07-19 | Boe Technology Group Co., Ltd. | Photoresist composition and manufacturing method thereof, OLED array substrate and manufacturing method thereof |
| WO2020125520A1 (en) * | 2018-12-19 | 2020-06-25 | 江苏艾森半导体材料股份有限公司 | Negative photoresist used for semiconductor encapsulation process |
| US11644750B2 (en) | 2018-12-19 | 2023-05-09 | Jiangsu Aisen Semiconductor Material Co., Ltd. | Negative photoresist used for semiconductor encapsulation process |
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Application publication date: 20160203 |
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