CN105300999A - Defect inspection method for silicon single crystal for MEMS - Google Patents
Defect inspection method for silicon single crystal for MEMS Download PDFInfo
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- CN105300999A CN105300999A CN201510675551.2A CN201510675551A CN105300999A CN 105300999 A CN105300999 A CN 105300999A CN 201510675551 A CN201510675551 A CN 201510675551A CN 105300999 A CN105300999 A CN 105300999A
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- silicon chip
- mems
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- single crystal
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 73
- 239000010703 silicon Substances 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000013078 crystal Substances 0.000 title claims abstract description 18
- 238000007689 inspection Methods 0.000 title claims abstract description 17
- 230000007547 defect Effects 0.000 title abstract description 9
- 230000007797 corrosion Effects 0.000 claims abstract description 15
- 238000005260 corrosion Methods 0.000 claims abstract description 15
- 238000005516 engineering process Methods 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 9
- 238000005088 metallography Methods 0.000 claims description 12
- 230000002950 deficient Effects 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 238000004088 simulation Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract 7
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a defect inspection method for a silicon single crystal for an MEMS. The method includes the steps that firstly, silicon wafers are cut from the head and the tail of a pre-used single crystal bar and machined to be polished wafers; secondly, the thermal process of a bonding technology is simulated, and the silicon wafers are put into a furnace to be subjected to thermal treatment for 3-5 h at 400-600 DEG C and then taken out; thirdly, deep chemical corrosion is performed for 40-45 min, and the silicon wafers are taken out when the corrosion removal quantity is 120-140 micrometers; fourthly, boxes are drawn on the silicon wafers, each square box is observed through a metallographic microscope, and if corrosion pits with the diameter larger than 100 micrometers exist, the silicon single crystal is judged to be unqualified. The method has the advantages that by simulating the thermal process of the MEMS technology and performing deep chemical corrosion, whether the silicon single crystal is qualified can be judged in advance; if large corrosion pits with the diameter larger than 100 micrometers appear after the silicon wafers are subjected to the thermal process and deep chemical corrosion, the single crystal bar is not put into production, so that failing occurring after the technological process of manufacturing the silicon wafers into a device is avoided, and loss is reduced.
Description
Technical field
The present invention relates to the fault detection method of a kind of MEMS silicon single crystal being applied to semiconductor applications.
Background technology
Since the innovation of the later stage eighties 20th century MEMS, through the development of more than 20 years, MEMS has become pith fast-developing in semi-conductor industry, and MEMS technology is used widely in fields such as automobile, Industry Control, space flight and aviation, medical treatment & health, intelligent mobile phone, panel computer and wearable devices.
MEMS is along with the development of SIC (semiconductor integrated circuit) Micrometer-Nanometer Processing Technology and ultraprecise Machining Technology gets up.The microminiaturization that its feature is not simple, and refer to can batch making, the micro-system that integrates micro parts, microsensor, micro actuator and signal transacting and control circuit etc.And the silicon MEMS process technology grown up on integrated circuit technique (IC) basis is because have the advantages such as low, the easy and integrated making of circuit of batch production, cost, become the main flow of MEMS process technology at present.
Silica-based MEMS process technology is mainly according to body silicon processing technique and the development of surface sacrificial layer technology two main lines: bulk silicon technological main manifestations is the combination of bonding and deep etching technology, pursue large mass and low stress and Three-dimension process, the volume defect of silicon is larger on its impact.Surface sacrificial layer technology is to multilayer, integrated direction development, and the surface imperfection of silicon materials has a certain impact to it, but silicon volume defect is little on its impact.
At present, the method for inspection for defects on silicon surfaces is ripe, but the inspection of silicon volume defect there is no method can seek.If early stage fails to exclude the silicon materials of volume defect, MEMS can be caused to lose efficacy after manufacture craft.In order to avoid finding to lose efficacy after MEMS manufacture craft, need to set up a kind of judge in advance silicon chip whether can detection method.
Summary of the invention
The technical matters that the present invention solves is: a kind of fault detection method providing MEMS silicon single crystal, by the method for analog MEMS process heat process and degree of depth chemical corrosion, judge whether silicon single crystal is applicable to MEMS in advance, avoid silicon chip component failure after making devices technological process, the unnecessary loss caused.
The technical solution used in the present invention is: a kind of fault detection method of MEMS silicon single crystal, and it is characterized in that, step is as follows:
The first step: cut silicon chip end to end from pre-monocrystal rod, is processed into polished silicon wafer;
Second step: the thermal process of simulation bonding technology, silicon chip is entered under 400 DEG C ~ 600 DEG C conditions furnace treatment reason and take out after 3 ~ 5 hours, whole process is carried out in a nitrogen atmosphere;
3rd step: degree of depth chemical corrosion, concentration 50% potassium hydroxide solution is poured in quartz curette and heats, put into silicon chip when being heated to 90 DEG C ~ 100 DEG C to corrode, etching time is 40 ~ 45min, silicon chip is taken out when erosion removal amount is 120 ~ 140 μm, with deionized water rinsing, drying, dry speed 800 ~ 1200r/min, dry time 2 ~ 5min;
4th step: by the silicon chip surface situation after the corrosion of metallography microscope sem observation, inspection diameter 100mm silicon chip, first frame on silicon chip, tale position is 32 grids, the grid length of side is 13mm, then uses each grid of metallography microscope sem observation, the etch pit that diameter is greater than 100 μm if exist, then be judged to be defective, this monocrystalline is not suitable for MEMS;
Inspection diameter 125mm silicon chip, first frame on silicon chip, tale position is 52 grids, the grid length of side is 13mm, then uses each grid of metallography microscope sem observation, the etch pit that diameter is greater than 100 μm if exist, then be judged to be defective, this monocrystalline is not suitable for MEMS;
Inspection diameter 150mm silicon chip, first frame on silicon chip, tale position is 80 grids, the grid length of side is 13mm, then uses each grid of metallography microscope sem observation, the etch pit that diameter is greater than 100 μm if exist, then be judged to be defective, this monocrystalline is not suitable for MEMS;
Above-mentioned inspection, if surface is good or to there is the etch pit that diameter is less than 100 μm be qualified, monocrystal rod then can put into production.
The invention has the beneficial effects as follows: by analog MEMS process heat process and degree of depth chemical corrosion, can judge that whether silicon single crystal is qualified, whether be suitable for MEMS in advance.Frame on silicon chip, can effectively ensure to carry out whole inspection to silicon chip surface, if occur that diameter is greater than the larger etch pit of 100 μm after silicon chip experience thermal process and degree of depth chemical corrosion, this monocrystal rod does not then put into production, if surface is good or to there is the etch pit that diameter is less than 100 μm be qualified, monocrystal rod then can put into production, and silicon chip can be avoided to find to lose efficacy after making devices technological process, reduce loss.
Accompanying drawing explanation
Fig. 1 is the test pattern that the present invention checks diameter 100mm silicon chip;
Fig. 2 is the test pattern that the present invention checks diameter 125mm silicon chip;
Fig. 3 is the test pattern that the present invention checks diameter 150mm silicon chip;
Fig. 4 is the MEMS silicon single crystal defect map in the present invention;
Fig. 5 is that the MEMS single crystal surfaces in the present invention is well schemed.
Embodiment
A fault detection method for MEMS silicon single crystal, step is as follows:
The first step: cut silicon chip end to end from pre-monocrystal rod, is processed into polished silicon wafer.
Second step: the thermal process of simulation bonding technology, silicon chip is entered under 400 DEG C ~ 600 DEG C conditions furnace treatment reason and take out after 3 ~ 5 hours, whole process is carried out in a nitrogen atmosphere.
3rd step: degree of depth chemical corrosion, concentration 50% potassium hydroxide solution is poured in quartz curette and heats, put into silicon chip when being heated to 90 DEG C ~ 100 DEG C to corrode, etching time is 40 ~ 45min, silicon chip is taken out when erosion removal amount is 120 ~ 140 μm, cool rear deionized water rinsing, drying, dry speed 800 ~ 1200r/min, dry time 2 ~ 5min.
4th step: by the silicon chip surface situation after the corrosion of metallography microscope sem observation, inspection diameter 100mm silicon chip, as shown in Figure 1, first frame on silicon chip, tale position is 32 grids, and the grid length of side is 13mm, use each grid of metallography microscope sem observation again, if there is the etch pit that diameter is greater than 100 μm, be then judged to be defective, this monocrystalline is not suitable for MEMS.
Inspection diameter 125mm silicon chip, as shown in Figure 2, first frame on silicon chip, tale position is 52 grids, and the grid length of side is 13mm, then uses each grid of metallography microscope sem observation, if there is the etch pit that diameter is greater than 100 μm, be then judged to be defective, this monocrystalline is not suitable for MEMS.
Inspection diameter 150mm silicon chip, as shown in Figure 3, first frame on silicon chip, tale position is 80 grids, and the grid length of side is 13mm, then uses each grid of metallography microscope sem observation, if there is the etch pit that diameter is greater than 100 μm, be then judged to be defective, this monocrystalline is not suitable for MEMS.
Above-mentioned inspection, if surface is good or to there is the etch pit that diameter is less than 100 μm be qualified, monocrystal rod then can put into production.
Fig. 4 is MEMS single crystal surfaces band defect map; Fig. 5 is that MEMS single crystal surfaces is well schemed.
The silicon chip of above-mentioned diameter 100mm, 125mm and 150mm is normally used silicon chip, and this method is also applicable to the fault detection to other diameter silicon chips.
Claims (1)
1. a fault detection method for MEMS silicon single crystal, it is characterized in that, step is as follows:
The first step: cut silicon chip end to end from pre-monocrystal rod, is processed into polished silicon wafer;
Second step: the thermal process of simulation bonding technology, silicon chip is entered under 400 DEG C ~ 600 DEG C conditions furnace treatment reason and take out after 3 ~ 5 hours, whole process is carried out in a nitrogen atmosphere;
3rd step: degree of depth chemical corrosion, concentration 50% potassium hydroxide solution is poured in quartz curette and heats, put into silicon chip when being heated to 90 DEG C ~ 100 DEG C to corrode, etching time is 40 ~ 45min, silicon chip is taken out when erosion removal amount is 120 ~ 140 μm, with deionized water rinsing, drying, dry speed 800 ~ 1200r/min, dry time 2 ~ 5min;
4th step: by the silicon chip surface situation after the corrosion of metallography microscope sem observation, inspection diameter 100mm silicon chip, first frame on silicon chip, tale position is 32 grids, the grid length of side is 13mm, then uses each grid of metallography microscope sem observation, the etch pit that diameter is greater than 100 μm if exist, then be judged to be defective, this monocrystalline is not suitable for MEMS;
Inspection diameter 125mm silicon chip, first frame on silicon chip, tale position is 52 grids, the grid length of side is 13mm, then uses each grid of metallography microscope sem observation, the etch pit that diameter is greater than 100 μm if exist, then be judged to be defective, this monocrystalline is not suitable for MEMS;
Inspection diameter 150mm silicon chip, first frame on silicon chip, tale position is 80 grids, the grid length of side is 13mm, then uses each grid of metallography microscope sem observation, the etch pit that diameter is greater than 100 μm if exist, then be judged to be defective, this monocrystalline is not suitable for MEMS;
Above-mentioned inspection, if surface is good or to there is the etch pit that diameter is less than 100 μm be qualified, monocrystal rod then can put into production.
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| CN201510675551.2A CN105300999B (en) | 2015-10-19 | 2015-10-19 | A kind of the defects of MEMS silicon single crystal the method for inspection |
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| CN105300999A true CN105300999A (en) | 2016-02-03 |
| CN105300999B CN105300999B (en) | 2018-03-06 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110018279A (en) * | 2019-04-26 | 2019-07-16 | 西安奕斯伟硅片技术有限公司 | A kind of detection method and device of Defect |
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- 2015-10-19 CN CN201510675551.2A patent/CN105300999B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110018279A (en) * | 2019-04-26 | 2019-07-16 | 西安奕斯伟硅片技术有限公司 | A kind of detection method and device of Defect |
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Application publication date: 20160203 Assignee: CLP Jinghua (Tianjin) semiconductor materials Co.,Ltd. Assignor: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.46 Research Institute Contract record no.: X2024980004404 Denomination of invention: A defect inspection method for silicon single crystals used in MEMS Granted publication date: 20180306 License type: Common License Record date: 20240415 |
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