CN105294110A - Method of preparing high-piezoelectric-property LNO/BCT-0.5BZT thin film at low temperature - Google Patents
Method of preparing high-piezoelectric-property LNO/BCT-0.5BZT thin film at low temperature Download PDFInfo
- Publication number
- CN105294110A CN105294110A CN201510869541.2A CN201510869541A CN105294110A CN 105294110 A CN105294110 A CN 105294110A CN 201510869541 A CN201510869541 A CN 201510869541A CN 105294110 A CN105294110 A CN 105294110A
- Authority
- CN
- China
- Prior art keywords
- bct
- lno
- film
- mol ratio
- ethylene glycol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses a method of preparing a high-piezoelectric-property LNO/BCT-0.5BZT thin film at low temperature, relating to a thin film preparation method, belonging to the field of preparation of the high-piezoelectric-property LNO/BCT-0.5BZT thin film, and aiming to solve the technical problem that an existing BCT-BZT thin film is high in crystallization temperature, results in interface diffusion and causes high leak current density. The method comprises the following steps: 1, preparing a precursor BCT-BZT; 2, preparing lanthanum nickelate sol; 3, preparing an amorphous state thin film; 4, preparing LNO/Pt/Ti/SiO2/Si; 5, preparing an amorphous film; 6, preparing a BCT-0.5BZT thin film. Compared with a BCT-0.5BZT thin film, the crystallization temperature of the LNO/BCT-0.5BZT thin film is reduced to 550 DEG C, and the leak current density of the thin film is lowered; the minimum leak current density is 1.27 multiplied by 10<-6>A/cm.
Description
Technical field
The present invention relates to a kind of preparation method of film, belong to the preparation field of high tension performance LNO/BCT-0.5BZT film.
Background technology
Along with the fast development of information, electronics and power industry, the piezoelectric membrane with high piezoelectric constant has noticeable application prospect, and becoming the focus of industry research, the high performance piezoelectric film particularly with low leakage current density has become the important directions of industry development.BCT-BZT pottery has good piezoelectric & dielectric properties, and the BCT-BZT film in the past prepared requires that crystallization temperature is high, causes interfacial diffusion, causes high leakage current density.
Summary of the invention
The present invention is high in order to solve existing BCT-BZT film crystallization temperature, causes interfacial diffusion to cause the technical problem of high leakage current density, provides a kind of method of low-temperature growth high tension performance LNO/BCT-0.5BZT film.
The method of low-temperature growth high tension performance LNO/BCT-0.5BZT film is as follows:
One, barium acetate and lime acetate are dissolved in glacial acetic acid, abundant stirring, after solute dissolves be cooled to room temperature completely, drip propyl alcohol zirconium, stir 20 ~ 40min, add tetrabutyl titanate, finally drip ethylene glycol monomethyl ether to regulate, obtain the precursor B CT-BZT that concentration is 0.3 ~ 0.4mol/L, wherein the mol ratio of lime acetate and barium acetate is (0.1 ~ 0.2) ﹕ 1, the mol ratio of tetrabutyl titanate and barium acetate be (0.2 ~ 0.6) ﹕ 1, the mol ratio of propyl alcohol zirconium and barium acetate is (0.1 ~ 0.2) ﹕ 1;
Two, lanthanum nitrate and nickel acetate are added in ethylene glycol monomethyl ether, then keep that temperature is 55 DEG C ~ 65 DEG C, rotating speed is 500r/min ~ 700r/min, churning time is under the condition of 20min ~ 40min, adding ethylene glycol monomethyl ether regulates collosol concentration to be 0.02 ~ 0.08mol/L, ageing 24h, obtain nickel acid lanthanum colloidal sol, wherein the mol ratio of lanthanum nitrate and ethylene glycol monomethyl ether is: (0.006 ~ 0.007) ﹕ 1, the mol ratio of nickel acetate and ethylene glycol monomethyl ether is (0.006 ~ 0.007) ﹕ 1;
Three, sol evenning machine is opened, by Pt/Ti/SiO
2/ Si substrate is placed on the sucker place of sol evenning machine, and adjusting rotary speed is 3500r/s ~ 4500r/s, and spin-coating time is 12 ~ 18s, with syringe, the nickel obtained in step 2 acid lanthanum colloidal sol is dropwise paved with Pt/Ti/SiO
2one jiao of/Si substrate, starts to get rid of film, terminates, and obtains noncrystalline membrane;
Four, noncrystalline membrane step 3 obtained, being placed on temperature is in the flattening oven of 400 ~ 500 DEG C, thermolysis 40 ~ 80s, obtains LNO/Pt/Ti/SiO
2/ Si;
Five, LNO/Pt/Ti/SiO step 4 obtained
2/ Si is placed on sol evenning machine sucker place, and the BCT-0.5BZT presoma of step one is dropwise paved with LNO/Pt/Ti/SiO
2one jiao of/Si, start to get rid of film, adjusting rotary speed is 3500r/s ~ 4500r/s, and spin-coating time is 12 ~ 18s, and obtain non-crystalline state wet film, be placed on by non-crystalline state wet film in the flattening oven of 400 ~ 500 DEG C, thermal decomposition time is 100 ~ 140s, obtains amorphous membrance;
Six, amorphous membrance step 5 obtained repeats 3 ~ 5 times according to the working method of step 5, then carries out anneal 30 ~ 60min at 550 ~ 700 DEG C, obtains BCT-0.5BZT film.
Advantage of the present invention:
One, the invention provides a kind of method of low-temperature growth high tension performance LNO/BCT-0.5BZT film, novelty take LNO as Seed Layer, with Pt/Ti/SiO
2/ Si is substrate, obtains a kind of novel LNO/Pt/Ti/SiO
2/ Si film, preparation technology is simple.
Two, the invention provides a kind of method of low-temperature growth high tension performance LNO/BCT-0.5BZT film, LNO/BCT-0.5BZT film is compared to BCT-0.5BZT film, and Tc is reduced to 550 DEG C, reduces the leakage current density of film.
The present invention is Seed Layer by employing (LNO), with Pt/Ti/SiO
2/ Si is substrate, and utilize collosol and gel spin coating technique to prepare film, this preparation method reduces the Tc of BCT-BZT film, obtains the BCT-BZT film having low leakage current density to keep high tension performance.Having minimum leakage current density is 1.27 × 10
-6a/cm.
Accompanying drawing explanation
Fig. 1 is that the BCT-0.5BZT film for preparing experiment one and LNO/BCT-0.5BZT film carry out X-ray diffraction analysis figure, a) 700 DEG C of LNO/BCT-0.5BZT film X-ray diffraction analysis figure annealed are represented in figure, b) the LNO/BCT-0.5BZT film X-ray diffraction analysis figure of 550 DEG C of annealing is represented, c) BCT-0.5BZT film X-ray diffraction analysis figure, the d of 700 DEG C of annealing is represented) represent 550 DEG C of BCT-0.5BZT film X-ray diffraction analysis figure annealed;
Fig. 2 is the BCT-0.5BZT film for preparing of experiment one and the LNO/BCT-0.5BZT film XRR figure 550 DEG C and 700 DEG C annealing, the XRR figure of 700 DEG C of LNO/BCT-0.5BZT films of annealing a) is represented in figure, b) the XRR figure of the LNO/BCT-0.5BZT film of 550 DEG C of annealing is represented, c) represent the XRR figure of the BCT-0.5BZT film of 700 DEG C of annealing, d) represent the XRR figure of 550 DEG C of BCT-0.5BZT films of annealing;
Fig. 3 is the BCT-0.5BZT film for preparing of experiment one and the LNO/BCT-0.5BZT film D-V curves 550 DEG C and 700 DEG C annealing, a) 700 DEG C of LNO/BCT-0.5BZT film D-V curves of annealing are represented in figure, b) represent the LNO/BCT-0.5BZT film D-V curve of 550 DEG C of annealing, c) represent 700 DEG C of BCT-0.5BZT film D-V curves of annealing;
Fig. 4 is the BCT-0.5BZT film for preparing of experiment one and the LNO/BCT-0.5BZT film leakage current density figure 550 DEG C and 700 DEG C annealing,
represent the LNO/BCT-0.5BZT film leakage current density map 550 DEG C of annealing, ● represent the LNO/BCT-0.5BZT film leakage current density map 700 DEG C of annealing, ▲ represent the BCT-0.5BZT film leakage current density map of annealing at 700 DEG C.
Embodiment
Technical solution of the present invention is not limited to following cited embodiment, also comprises the arbitrary combination between each embodiment.
Embodiment one: the method for present embodiment low-temperature growth high tension performance LNO/BCT-0.5BZT film is as follows:
One, barium acetate and lime acetate are dissolved in glacial acetic acid, abundant stirring, after solute dissolves be cooled to room temperature completely, drip propyl alcohol zirconium, stir 20 ~ 40min, add tetrabutyl titanate, finally drip ethylene glycol monomethyl ether to regulate, obtain the precursor B CT-BZT that concentration is 0.3 ~ 0.4mol/L, wherein the mol ratio of lime acetate and barium acetate is (0.1 ~ 0.2) ﹕ 1, the mol ratio of tetrabutyl titanate and barium acetate be (0.2 ~ 0.6) ﹕ 1, the mol ratio of propyl alcohol zirconium and barium acetate is (0.1 ~ 0.2) ﹕ 1;
Two, lanthanum nitrate and nickel acetate are added in ethylene glycol monomethyl ether, then keep that temperature is 55 DEG C ~ 65 DEG C, rotating speed is 500r/min ~ 700r/min, churning time is under the condition of 20min ~ 40min, adding ethylene glycol monomethyl ether regulates collosol concentration to be 0.02 ~ 0.08mol/L, ageing 24h, obtain nickel acid lanthanum colloidal sol, wherein the mol ratio of lanthanum nitrate and ethylene glycol monomethyl ether is: (0.006 ~ 0.007) ﹕ 1, the mol ratio of nickel acetate and ethylene glycol monomethyl ether is (0.006 ~ 0.007) ﹕ 1;
Three, sol evenning machine is opened, by Pt/Ti/SiO
2/ Si substrate is placed on the sucker place of sol evenning machine, and adjusting rotary speed is 3500r/s ~ 4500r/s, and spin-coating time is 12 ~ 18s, with syringe, the nickel obtained in step 2 acid lanthanum colloidal sol is dropwise paved with Pt/Ti/SiO
2one jiao of/Si substrate, starts to get rid of film, terminates, and obtains noncrystalline membrane;
Four, noncrystalline membrane step 3 obtained, being placed on temperature is in the flattening oven of 400 ~ 500 DEG C, thermolysis 40 ~ 80s, obtains LNO/Pt/Ti/SiO
2/ Si;
Five, LNO/Pt/Ti/SiO step 4 obtained
2/ Si is placed on sol evenning machine sucker place, and the BCT-0.5BZT presoma of step one is dropwise paved with LNO/Pt/Ti/SiO
2one jiao of/Si, start to get rid of film, adjusting rotary speed is 3500r/s ~ 4500r/s, and spin-coating time is 12 ~ 18s, and obtain non-crystalline state wet film, be placed on by non-crystalline state wet film in the flattening oven of 400 ~ 500 DEG C, thermal decomposition time is 100 ~ 140s, obtains amorphous membrance,
Six, amorphous membrance step 5 obtained repeats 3 ~ 5 times according to the working method of step 5, then carries out anneal 30 ~ 60min at 550 ~ 700 DEG C, obtains BCT-0.5BZT film.
Embodiment two: present embodiment and embodiment one are 0.1765:1 unlike the mol ratio of lime acetate in step one and barium acetate, the mol ratio of tetrabutyl titanate and barium acetate is 0.4706:1, and the mol ratio of propyl alcohol zirconium and barium acetate is 0.1176:1.Other is identical with embodiment one.
Embodiment three: one of present embodiment and embodiment one or two stir 30min unlike in step one, add tetrabutyl titanate, finally drips ethylene glycol monomethyl ether and regulates, obtain the precursor B CT-BZT that concentration is 0.35mol/L.Other is identical with one of embodiment one or two.
Embodiment four: one of present embodiment and embodiment one to three are 0.0065:1 unlike the mol ratio of lanthanum nitrate in step 2 and ethylene glycol monomethyl ether, the mol ratio of nickel acetate and ethylene glycol monomethyl ether is 0.0065:1.Other is identical with one of embodiment one to three.
Embodiment five: under one of present embodiment and embodiment one to four are the condition of 30min unlike churning time in step 2, adds ethylene glycol monomethyl ether and regulates collosol concentration to be 0.05mol/L.Other is identical with one of embodiment one to four.
Embodiment six: one of present embodiment and embodiment one to five are 4000r/s unlike adjusting rotary speed in step 3, spin-coating time is 16s.Other is identical with one of embodiment one to five.
Embodiment seven: one of present embodiment and embodiment one to six are 450 DEG C unlike temperature in step 4, thermal decomposition time is 60s.Other is identical with one of embodiment one to six.
Embodiment eight: one of present embodiment and embodiment one to seven are unlike adjusting rotary speed 4000r/s in step 5, and spin-coating time is 16s, are placed on by non-crystalline state wet film in the flattening oven of 450 DEG C, and thermal decomposition time is 120s.Other is identical with one of embodiment one to seven.
Embodiment nine: one of present embodiment and embodiment one to eight repeat 3 ~ 5 times unlike the working method of amorphous membrance step 5 obtained in step 6 according to step 5.Other is identical with one of embodiment one to eight.
Embodiment ten: one of present embodiment and embodiment one to nine carry out anneal 30min 550 DEG C and 700 DEG C respectively unlike step 7.Other is identical with one of embodiment one to nine.
Adopt following experimental verification effect of the present invention:
Experiment one:
The method of low-temperature growth high tension performance LNO/BCT-0.5BZT film is as follows:
One, barium acetate and lime acetate are dissolved in glacial acetic acid, abundant stirring, after solute dissolves be cooled to room temperature completely, drip propyl alcohol zirconium, stir 20 ~ 40min, add tetrabutyl titanate, finally drip ethylene glycol monomethyl ether to regulate, obtain the precursor B CT-BZT that concentration is 0.3 ~ 0.4mol/L, wherein the mol ratio of lime acetate and barium acetate is 0.1765:1, the mol ratio of tetrabutyl titanate and barium acetate is 0.4706:1, and the mol ratio of propyl alcohol zirconium and barium acetate is 0.1176:1;
Two, lanthanum nitrate and nickel acetate are added in ethylene glycol monomethyl ether, then keep that temperature is 60 DEG C, rotating speed is 500r/min ~ 700r/min, churning time is under the condition of 20min ~ 40min, adding ethylene glycol monomethyl ether regulates collosol concentration to be 0.02 ~ 0.08mol/L, ageing 24h, obtain nickel acid lanthanum colloidal sol, wherein the mol ratio of lanthanum nitrate and ethylene glycol monomethyl ether is: 0.0065:1, and the mol ratio of nickel acetate and ethylene glycol monomethyl ether is 0.0065:1;
Three, sol evenning machine is opened, by Pt/Ti/SiO
2/ Si substrate is placed on the sucker place of sol evenning machine, and adjusting rotary speed is 4000r/s, and spin-coating time is 16s, with syringe, the nickel obtained in step 2 acid lanthanum colloidal sol is dropwise paved with Pt/Ti/SiO
2one jiao of/Si substrate, starts to get rid of film, terminates, and obtains noncrystalline membrane;
Four, noncrystalline membrane step 3 obtained, being placed on temperature is in the flattening oven of 450 DEG C, thermolysis 60s, obtains LNO/Pt/Ti/SiO
2/ Si;
Five, LNO/Pt/Ti/SiO step 4 obtained
2/ Si is placed on sol evenning machine sucker place, and the BCT-0.5BZT presoma of step one is dropwise paved with LNO/Pt/Ti/SiO
2one jiao of/Si, start to get rid of film, adjusting rotary speed is 4000r/s, and spin-coating time is 16s, and obtain non-crystalline state wet film, be placed on by non-crystalline state wet film in the flattening oven of 450 DEG C, thermal decomposition time is 120s, obtains amorphous membrance,
Six, the amorphous membrance that step 5 obtains is repeated 4 times according to the working method of step 5, then carry out anneal 30min 550 DEG C and 700 DEG C respectively, obtain LNO/BCT-0.5BZT film.
The method of BCT-0.5BZT film is as follows:
One, barium acetate and lime acetate are dissolved in glacial acetic acid, abundant stirring, after solute dissolves be cooled to room temperature completely, drip propyl alcohol zirconium, stir 20 ~ 40min, add tetrabutyl titanate, finally drip ethylene glycol monomethyl ether to regulate, obtain the precursor B CT-BZT that concentration is 0.3 ~ 0.4mol/L, wherein the mol ratio of lime acetate and barium acetate is 0.1765:1, the mol ratio of tetrabutyl titanate and barium acetate is 0.4706:1, and the mol ratio of propyl alcohol zirconium and barium acetate is 0.1176:1;
Two, lanthanum nitrate and nickel acetate are added in ethylene glycol monomethyl ether, then keep that temperature is 60 DEG C, rotating speed is 500r/min ~ 700r/min, churning time is under the condition of 20min ~ 40min, adding ethylene glycol monomethyl ether regulates collosol concentration to be 0.02 ~ 0.08mol/L, ageing 24h, obtain nickel acid lanthanum colloidal sol, wherein the mol ratio of lanthanum nitrate and ethylene glycol monomethyl ether is: 0.0065:1, and the mol ratio of nickel acetate and ethylene glycol monomethyl ether is 0.0065:1;
Three, sol evenning machine is opened, by Pt/Ti/SiO
2/ Si substrate is placed on the sucker place of sol evenning machine, and adjusting rotary speed is 4000r/s, and spin-coating time is 16s, with syringe, the BCT-0.5BZT presoma of step one is dropwise paved with Pt/Ti/SiO
2one jiao of/Si substrate, starts to get rid of film, and terminate, being placed on temperature is in the flattening oven of 450 DEG C, thermolysis 60s, then at 550 and 700 DEG C of anneal 30min respectively, obtains BCT-0.5BZT film.
As can be seen from Figure 1, present pure perovskite structure at the LNO/BCT-0.5BZT film of 550 DEG C of annealing, crystallization effect is good.
As can be drawn from Figure 2, clear in the LNO/BCT-0.5BZT film interface of 550 DEG C of annealing, without diffusion.
As can be seen from Figure 3, at the LNO/BCT-0.5BZT film of 550 DEG C of annealing, there is good piezoelectric constant (D
max~ 0.45nm), suitable with the piezoelectric constant of the pure BCT-0.5BZT film of annealing at 700 DEG C.
Can find, at the LNO/BCT-0.5BZT film of 550 DEG C of annealing, there are minimum leakage current density (J ~ 1.27 × 10 from Fig. 4
-6a/cm).
Claims (10)
1. the method for low-temperature growth high tension performance LNO/BCT-0.5BZT film, is characterized in that the method for low-temperature growth high tension performance LNO/BCT-0.5BZT film is as follows:
One, barium acetate and lime acetate are dissolved in glacial acetic acid, abundant stirring, after solute dissolves be cooled to room temperature completely, drip propyl alcohol zirconium, stir 20 ~ 40min, add tetrabutyl titanate, finally drip ethylene glycol monomethyl ether to regulate, obtain the precursor B CT-BZT that concentration is 0.3 ~ 0.4mol/L, wherein the mol ratio of lime acetate and barium acetate is (0.1 ~ 0.2) ﹕ 1, the mol ratio of tetrabutyl titanate and barium acetate be (0.2 ~ 0.6) ﹕ 1, the mol ratio of propyl alcohol zirconium and barium acetate is (0.1 ~ 0.2) ﹕ 1;
Two, lanthanum nitrate and nickel acetate are added in ethylene glycol monomethyl ether, then keep that temperature is 55 DEG C ~ 65 DEG C, rotating speed is 500r/min ~ 700r/min, churning time is under the condition of 20min ~ 40min, adding ethylene glycol monomethyl ether regulates collosol concentration to be 0.02 ~ 0.08mol/L, ageing 24h, obtain nickel acid lanthanum colloidal sol, wherein the mol ratio of lanthanum nitrate and ethylene glycol monomethyl ether is: (0.006 ~ 0.007) ﹕ 1, the mol ratio of nickel acetate and ethylene glycol monomethyl ether is (0.006 ~ 0.007) ﹕ 1;
Three, sol evenning machine is opened, by Pt/Ti/SiO
2/ Si substrate is placed on the sucker place of sol evenning machine, and adjusting rotary speed is 3500r/s ~ 4500r/s, and spin-coating time is 12 ~ 18s, with syringe, the nickel obtained in step 2 acid lanthanum colloidal sol is dropwise paved with Pt/Ti/SiO
2one jiao of/Si substrate, starts to get rid of film, terminates, and obtains noncrystalline membrane;
Four, noncrystalline membrane step 3 obtained, being placed on temperature is in the flattening oven of 400 ~ 500 DEG C, thermolysis 40 ~ 80s, obtains LNO/Pt/Ti/SiO
2/ Si;
Five, LNO/Pt/Ti/SiO step 4 obtained
2/ Si is placed on sol evenning machine sucker place, and the BCT-0.5BZT presoma of step one is dropwise paved with LNO/Pt/Ti/SiO
2one jiao of/Si, start to get rid of film, adjusting rotary speed is 3500r/s ~ 4500r/s, and spin-coating time is 12 ~ 18s, and obtain non-crystalline state wet film, be placed on by non-crystalline state wet film in the flattening oven of 400 ~ 500 DEG C, thermal decomposition time is 100 ~ 140s, obtains amorphous membrance;
Six, amorphous membrance step 5 obtained repeats 3 ~ 5 times according to the working method of step 5, then carries out anneal 30 ~ 60min at 550 ~ 700 DEG C and obtains BCT-0.5BZT film.
2. the method for low-temperature growth high tension performance LNO/BCT-0.5BZT film according to claim 1, it is characterized in that the mol ratio of lime acetate and barium acetate in step one is 0.1765:1, the mol ratio of tetrabutyl titanate and barium acetate is 0.4706:1, and the mol ratio of propyl alcohol zirconium and barium acetate is 0.1176:1.
3. the method for low-temperature growth high tension performance LNO/BCT-0.5BZT film according to claim 1, it is characterized in that stirring 30min in step one, add tetrabutyl titanate, finally drip ethylene glycol monomethyl ether and regulate, obtain the precursor B CT-BZT that concentration is 0.35mol/L.
4. the method for low-temperature growth high tension performance LNO/BCT-0.5BZT film according to claim 1, it is characterized in that the mol ratio of lanthanum nitrate and ethylene glycol monomethyl ether in step 2 is 0.0065:1, the mol ratio of nickel acetate and ethylene glycol monomethyl ether is 0.0065:1.
5. the method for low-temperature growth high tension performance LNO/BCT-0.5BZT film according to claim 1, is characterized in that in step 2, churning time is under the condition of 30min, adds ethylene glycol monomethyl ether and regulates collosol concentration to be 0.05mol/L.
6. the method for low-temperature growth high tension performance LNO/BCT-0.5BZT film according to claim 1, it is characterized in that in step 3, adjusting rotary speed is 4000r/s, spin-coating time is 16s.
7. the method for low-temperature growth high tension performance LNO/BCT-0.5BZT film according to claim 1, it is characterized in that in step 4, temperature is 450 DEG C, thermal decomposition time is 60s.
8. the method for low-temperature growth high tension performance LNO/BCT-0.5BZT film according to claim 1, it is characterized in that adjusting rotary speed 4000r/s in step 5, spin-coating time is 16s, is placed on by non-crystalline state wet film in the flattening oven of 450 DEG C, and thermal decomposition time is 120s.
9. the method for low-temperature growth high tension performance LNO/BCT-0.5BZT film according to claim 1, is characterized in that amorphous membrance step 5 obtained in step 6 repeats 3 ~ 5 times according to the working method of step 5.
10. the method for low-temperature growth high tension performance LNO/BCT-0.5BZT film according to claim 1, is characterized in that step 7 carries out anneal 30min 550 DEG C and 700 DEG C respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510869541.2A CN105294110A (en) | 2015-12-01 | 2015-12-01 | Method of preparing high-piezoelectric-property LNO/BCT-0.5BZT thin film at low temperature |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510869541.2A CN105294110A (en) | 2015-12-01 | 2015-12-01 | Method of preparing high-piezoelectric-property LNO/BCT-0.5BZT thin film at low temperature |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105294110A true CN105294110A (en) | 2016-02-03 |
Family
ID=55192048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510869541.2A Pending CN105294110A (en) | 2015-12-01 | 2015-12-01 | Method of preparing high-piezoelectric-property LNO/BCT-0.5BZT thin film at low temperature |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105294110A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106396678A (en) * | 2016-08-31 | 2017-02-15 | 烟台南山学院 | Lead-free nano-piezoelectric composite ceramic material and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2254132A1 (en) * | 2009-05-20 | 2010-11-24 | Delphi Technologies, Inc. | Contact for ceramic capacitor with self-clearing feature |
-
2015
- 2015-12-01 CN CN201510869541.2A patent/CN105294110A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2254132A1 (en) * | 2009-05-20 | 2010-11-24 | Delphi Technologies, Inc. | Contact for ceramic capacitor with self-clearing feature |
Non-Patent Citations (1)
| Title |
|---|
| 张天栋: ""锆钛酸钡钙基无铅压电薄膜的微观结构与电性能"", 《中国优秀硕士学位论文全文数据库（电子期刊），工程科技Ⅰ辑》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106396678A (en) * | 2016-08-31 | 2017-02-15 | 烟台南山学院 | Lead-free nano-piezoelectric composite ceramic material and preparation method thereof |
| CN106396678B (en) * | 2016-08-31 | 2019-01-01 | 烟台南山学院 | Unleaded nanometer piezoelectric composite ceramics material and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103708828B (en) | Preparation method of bismuth sodium titanate-barium titanate lead-free composite piezoelectric thick film | |
| CN104538539B (en) | A kind of electric card effect refrigeration composite thick film material | |
| CN101388395A (en) | BiFeO3 based sandwich construction thin-film for ferro-electric memory and preparation thereof | |
| CN103451637A (en) | Aluminum-doped zinc oxide film and preparation method thereof | |
| CN102584221A (en) | Anti-ferroelectric thick film with high breakdown field strength and preparation method | |
| CN103833416A (en) | Preparation method of lanthanum nickelate conductive film by chemical solution deposition | |
| CN108892503B (en) | High-electrocaloric-effect thin film material and preparation method thereof | |
| CN103311320A (en) | Transparent conducting film for solar cell and preparation method thereof | |
| CN103757706B (en) | A kind of preparation method of nonlinear optical crystal surface antireflection protective film | |
| CN107910030B (en) | Preparation method of flexible BNT ferroelectric film | |
| CN105294110A (en) | Method of preparing high-piezoelectric-property LNO/BCT-0.5BZT thin film at low temperature | |
| CN108573940B (en) | Flexible electric card refrigerating device | |
| CN103922735A (en) | Preparation method of low-temperature crystalized BZT-BCT piezoelectric film | |
| CN103693959A (en) | A (Pb, bi) (Ni, zr, ti) O3solid solution ferroelectric film with both high piezoelectric constant and high energy storage density and its preparation method | |
| CN105420696B (en) | A kind of preparation method of tin oxide base thin film material | |
| CN104726851B (en) | A kind of method that sol-gal process prepares p-type SnO 2 thin film material | |
| CN111634939A (en) | Rare earth Sm-doped all-inorganic perovskite, preparation method and application thereof | |
| CN106887331B (en) | High density capacitors alumina base thin dielectric film and preparation method thereof | |
| CN105932088B (en) | Heterojunction film photoelectric device having perovskite structure and preparation method of the device | |
| CN109721353A (en) | A kind of preparation method of huge dielectric constant CCTO based film material | |
| CN101436532B (en) | Ultraviolet light assistant preparation method for ferro-electricity film of ferro-electric memory | |
| CN104891821A (en) | Method for preparing multilayer BiFeO3 film from precursor solutions with different concentrations | |
| CN103510086A (en) | Zinc tin oxide thin film and preparation method thereof, and thin film transistor and preparation method thereof | |
| CN103553358B (en) | A kind of Fe 3+/ SiO 2/ TiO 2the preparation method of nano compound film | |
| CN102229265B (en) | Barium strontium titanate multilayered film, and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160203 |
|
| WD01 | Invention patent application deemed withdrawn after publication |