CN105283971A - 集成有混合传感器的led芯片及其制造方法 - Google Patents
集成有混合传感器的led芯片及其制造方法 Download PDFInfo
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Abstract
本发明涉及发光二极管(LED)芯片,其中,混合传感器形成在氮化物基LED结构中。嵌入有这种混合传感器的芯片结构在用作照明元件的同时用作能够检测环境污染的LED发光传感器,并且具有根据电极材料的类型而作为各种环境污染传感器使用的效果。
Description
技术领域
本发明涉及发光二极管(LED)芯片,其中,混合传感器形成在氮化物基LED结构中。
背景技术
传感器的重要作用之一是检测源自生物的各种化学品或材料,诸如,各种离子的浓度、诸如氧气或者二氧化碳等气体的浓度。为了监测在我们周围环境中可能发生的水污染、空气污染等等,经常使用能够测量各种气体(诸如,CO、COx等等)、离子和湿度的传感器。在气体传感器的情况下,从约翰逊于1923年提出催化燃烧式起已经开发了众多的传感器。在半导体气体传感器的情况下,它们主要被分成电阻型传感器和非电阻型传感器,并且由于半导体气体传感器可以检测各种类型的气体,所以它们是非常有用的。
由于已使用诸如聚合物、半导体、陶瓷等的材料开发了具有优越性能的高技术元件,也开发了将湿度转换成电信号的形式的湿度传感器,并且具体地,转换湿度并输出阻抗、导电率、热导率、静电电容等的传感器。
将测量湿度的方法分成直接测量方法和间接测量方法。直接测量方法包括基于饱和、吸收或蒸发法的各种湿度计。间接测量方法包括评估水分吸收或光谱特性的方法,以及导电率、表面导电率、介电常数的变化、近红外吸收、扩散速度的压力差、电离电位的变化以及与其对应的参数等的测量。
虽然LED目前被广泛使用并且将它们的应用领域逐渐延伸到与亮度相关的特定范围中,但作为传感器的功能通过与以上描述的LED不相关的各个传感器执行。因此,在现有技术中未能发现传感器形成在与LED集成的结构中,并且尤其是,现在不存在用于以此结构测量特定污染物或测量温度或压力并且告知污染度的LED传感器。
发明内容
技术问题
因此,已作出本发明以提供一种氮化物基发光二极管(LED),其可被用于在作为照明元件操作的LED的持续发光时通过感测周围环境的污染水平来确定周围环境是否被污染。
技术解决方案
根据本发明的一个方面,提供一种集成有混合传感器的LED芯片,LED芯片包括:蓝宝石衬底;n型半导体层,形成在衬底上;两个或更多LED单元,形成在n型半导体层上;p型电极,形成在LED单元的p型半导体层上,以及p型电极极板(electrodepad),通过延伸p型电极形成在绝缘层上,该绝缘层形成在n型半导体层上;n型电极极板,面向彼此并且形成在在通过蚀刻移除绝缘层的区域中所暴露的n型半导体层的一部分上;n型极板对极板电极,在连接两侧上的n型电极极板的同时穿过中央部分;以及空白空间,形成在n型极板对极板电极(n型电极极板连接单元或混合电极)之下。
本发明的LED芯片可包括与在连接两侧上的极板电极的n型电极极板连接单元以下具有空气间隙的混合传感器连接的输出装置。在这一点上,用于显示电流值的变化的装置可以是输出装置。此外,作为显示装置工作的安培表可以是模拟型的装置或数字型装置并且可以在小于预定电流值或大于预定电流值的值处闪烁的方式操作,并且可以应用不同于上述输出装置的一个或多个输出设备。
在本发明的LED芯片中,当在连接两侧的极板电极的连接单元下方具有空白空间(emptyspace)的混合传感器被特定污染物损坏时,由于一定的变化被传送至与电极连接的输出装置,所以能够感测到污染。变化可以是电流值的变化或者电流变化率的增加或减少。
在本发明的LED芯片中,当在连接两侧的n型电极极板的n型极板电极连接单元(n型混合电极)下方具有空白空间的混合传感器受到特定污染物损坏时,一定的变化被传送至与其连接的输出装置,并且同时,用作照明元件的LED芯片(例如,由图中由六个单元构成)由于进入下面半导体层的电流的流动被保持而进行发光。
在本发明的LED芯片中,包括连接两侧的极板电极的n型极板电极连接单元(n型混合电极)的混合传感器在混合传感器下方具有空白空间。这种n型混合电极可以包括对化学气体(诸如,神经毒气、无色气体和无味气体)、特定环境污染气体(HCl、H2SO4、硝酸、HF和王水)、一般环境污染物等起反应的一种或多种金属(Al、Au、Sn、Ni、Cr等)。
本发明的LED芯片在n型电极极板连接单元上方具有空间,这是因为n型电极极板连接单元的顶部低于n型极板电极或p型极板电极的高度。因为,空白空间由于此构造而形成在n型电极极板连接单元的上方和下方,所以有助于流动包含污染物的空气。
根据本发明的另一方面,提供一种集成有混合传感器的LED芯片的制造方法,该方法包括步骤:制备衬底;堆叠包含MQW外延层的半导体层;形成两个或更多LED单元;在形成绝缘层之后,蚀刻将要形成两个或更多n型电极极板、两个或更多p型电极极板和n型横跨电极(traversingelectrode)的区域的二氧化硅,以便将n型电极部分和与p型电极对应的区域电隔离;形成在LED单元之间横跨的桥形的PR图案;形成覆盖PR图案的金属桥形的n型横跨电极;以及移除桥形的PR。
在制造LED芯片的方法中,形成n型横跨电极的步骤可以是使用掩模形成金属桥的沉积步骤。
在制造LED芯片的方法中,形成n型横跨电极的步骤可包括:形成金属桥的金属的沉积步骤;以及将沉积金属形成为桥的光刻步骤,并且在光刻工艺中可以移除桥形的PR。
在制造LED芯片的方法中,p型电极极板和n型电极极板的高度被设定为高于金属桥。
有益效果
在本发明中,两个或更多单元通以下各项同时发光:由两个或更多LED单元结构构成的n型电极和形成在在衬底上所形成的n型半导体层上的两个或更多n型极板电极以及从n型电极极板延伸以连接n型电极极板的n型电极极板连接单元、在p型氮化物半导体层上形成的p型电极、以及通过延伸p型极板形成在在n型半导体上形成的绝缘层上的p型极板电极,并且在包括这种多个发光单元的芯片中,穿过芯片中心的n型电极极板连接单元下方的空间内部被形成为空白。在这一点上,如果n型电极暴露于周围污染环境达预定时间段,导电性可能会发生变化,并且随着暴露于周围污染物的时间延长,通过穿过形成在芯片中心的n型电极极板连接单元的电流的变化能够感测环境中的污染度和污染物。同时,虽然操作LED在发光时产生细微变化,但可不影响使用期限地进行操作。嵌入有这种混合传感器的芯片结构可用作能够检测环境污染的LED发光传感器并且具有根据电极材料的类型作为各种环境污染传感器进行使用的效果。
附图说明
图1是示出作为本发明实施方式的嵌入有混合传感器的六单元LED芯片结构的示图。
图2是示出本发明中的包括连接到传感器的安培表的电路图的示图。
图3是示出在本发明中的包括LED元件、安培表和电源的配置的示图。
图4是示出包括n型电极极板连接单元(n型横跨电极,n型电极极板之间的电极或混合电极:同时双向工作)的芯片和切割线A-A’的顶面示图。
图5是沿着示出在n型横跨电极下方形成的空白空间的芯片的截面A-A’截取的截面图。
图6是示出包括n型横跨电极的芯片和切割线B-B’的顶面示图。
图7是沿着三个单元的线B-B’截取的示出P区域、n区域、发光区域和n型极板电极的截面图。
图8是示出包括衬底和MQW外延层的堆叠结构的示图。
图9示出了在一个芯片中形成六个单元的光刻步骤完成时的示图。
图10示出了当沉积用作干蚀刻掩模的金属时的示图。
图11是示出在P型GaN层上暴露的金属掩模的示图。
图12示出了在进行蚀刻直至暴露n型GaN层时的示图。
图13示出了移除金属掩模时的示图。
图14示出了沉积P型电极的光刻步骤完成时的示图。
图15是示出在P型层上沉积的ITO的示图。
图16是示出在剥离后剩下的ITO的示图。
图17示出了在沉积二氧化硅(siliconoxide)之后当在将要形成n型电极、p型电极和n型横跨电极的区域中蚀刻二氧化硅时的示图。
图18是示出在形成横跨元件内部的金属桥之前施加的PR的状态的示图。
图19是示出形成包括横跨元件内部的金属桥的n型极板和n型电极的状态的示图。
图20是示出形成势垒金属和反射器金属的状态的示图。
图21是示出在n型极板和p型极板上形成一次焊料金属(primarysoldermetal)的状态的示图。
图22是示出形成用于连接p型极板和p型电极的二次焊料金属(secondarysoldermetal)的状态的示图。
具体实施方式
本发明涉及氮化物基发光二极管(LED),其中,在具有多个发光单元的芯片中,在穿过芯片中心的n型电极下方的空间形成为空白(empty,空),使得LED能在发光时能够通过流过电极的电流的变化感测污染物。以此方式操作的LED具有的LED芯片结构虽然在发光时可能发生细微变化,但不会影响LED的使用期限。即,本发明的氮化物基发光二极管(LED)涉及具有结构嵌入式传感器与一般发光结构的混合芯片。
图1是示出嵌入有混合传感器的六单元LED芯片结构的示图,作为本发明的实施方式,并且单元的数目不会影响本发明的范围。例如,嵌入有混合传感器的LED芯片作为示例而示出并且配置如下。LED芯片包括形成在蓝宝石衬底1上的n型半导体层2;形成在半导体层上的六个LED单元;穿过六个LED单元的中心的混合(n型)电极23;n型电极极板,形成在通过蚀刻绝缘层暴露的n型氮化物半导体层的一些区域中的混合(n型)电极的两端;以及p型电极极板,连接到被形成在p型氮化物半导体层4上并由焊料金属14和15构成的p型电极,该p型电极极板覆盖被形成在上绝缘层上的势垒金属12,绝缘层形成在n型半导体层上。
图2的电路图示出了在本发明中用作传感器的配置的实施方式。LED是自身具有本发明提出的混合传感器的六个单元的LED芯片,并且用作传感器并且也用作负(-)电极的混合n型电极部分被表示为可变电阻器。根据本发明的嵌入有混合传感器的六个单元的LED芯片被配置为即使当混合(n型)电极由于污染而完全损坏时也不改变LED的光输出。
图3是示出根据本发明实施方式的包括LED芯片的配置的示图。在图4至图7中示出电极的配置作为本发明的实施方式。如图7所示,p型电极起到正(+)电极的作用,并且LED单元结构包含在p型电极下方。图4的n型混合电极起到传感器和负(-)电极的作用并且可包括掺杂有差不多10的17次方(tentotheseventeenthpower)至10的19次方的n型掺杂材料的层。图7的LED单元结构起到一般LED的发光区域的作用。
参考图5,n型掺杂层形成在蓝宝石衬底上。图4的截面A-A’示出了被配置为用作传感器和负(-)电极的混合形式的n型电极。相对于图6的截面B-B’,在图7中示出包含n区域、p区域和发光区域的单元的截面图。
蓝宝石衬底的厚度大约为100至250微米,并且六单元LED的尺寸可以是例如1mm×1mm或更大。混合电极沿着混合电极的左右方向延伸以充当所有六个单元3的共用n型电极并且通过将预定电压同时施加到混合电极沿纵向方向的两侧上极板金属来操作六个LED单元。在这一点上,混合电极具有在连接两端的极板的部分下方与n型半导体层分离的空白空间,并且混合n型电极的宽度可具有几十到几百微米的范围,并且它的厚度在5000至10000Armstrong的范围内。
在这个实施方式中,虽然p型电极独立地形成在六个单元中的每一个单元中,并且将电流个别地施加于p型电极,但通过两个极板金属连接p型电极。通过将三个单元连接到一个极板金属来将单元集成到两个组中,并且一个组中的每三个单元一起操作。
传感器部分是具有的空白空间在连接两侧上的极板金属的混合电极(n型混合电极或混合n型电极)的中心部分下方的结构(图5)。当施加电压进行LED操作时,电阻和一些电流形成在连接两侧的极板金属的混合电极中,并且电阻随着由污染物质引起的混合电极的变化或损坏而变化,相应地,也改变了流动电流量,混合电极起到传感器的作用。在这一点上,本发明不受在空白空间中的空气间隙的体积变化的影响,这是因为由于浓度差的扩散是传播包括气体(例如,空气)等的流态形式的化学品的主要操作机制。即,虽然当具有位于混合电极部分下方的充满空气的空白空间的混合电极部分被污染物改变和损坏时,混合电极部分通过感测流入混合电极中的电流的细微变化可以执行传感器的功能,由于工作的LED可以维持电流流入n型掺杂层,所以能够充分地执行照明元件的功能。
因此,本发明的其中具有混合传感器的LED芯片结构不会干扰驱动LED执行发光功能并且提供氮化物基LED的阵列,该氮化物基LED的阵列具有能够在驱动LED发光时感测周围环境中微小的污染度的功能。
金属类型可以由可被用作n型电极的金属的所有种类的组合构成。例如,金属类型可以包括Cr/Ni/Au、Ti/Al等等,并且污染物可以是盐酸材料、磺酸基材料、氟化材料、高氯化蒸汽、氨材料等。例如,如果将应用本发明实施方式的LED照明安装在使用化学品(诸如,盐酸)的一类设备或空间(例如,蚀刻设备或半导体的蚀刻处理部分)中,可以感测空气中的盐酸浓度的升高并且在盐酸泄漏时采取必要动作的形式来使用。可通过诸如用作n型电极的材料的类型和组合、电极的物理尺寸(长度、厚度、宽度和厚度的变化和/或取决于长度的宽度)的设计等因素来调节感测的灵敏度。此外,除了电流的变化以外,能够通过还计算电流变化率增强显示功能。即,可通过区分电流以高电流变化率降低的情况和电流以低电流变化率降低的情况将显示功能分成两个或更多级别,或者显示功能可以被分成多级别。
图8至图22示出了配置本发明的步骤。图8示出了包括衬底和MQW外延层的芯片的堆叠结构,示出了在2英寸的蓝宝石衬底上生成并且被切割成6mm×4mm大小的块的芯片。图9示出了在一个芯片中形成3×2阵列的六个单元的光刻结束时的示图。
图10示出了在形成六个单元的光刻完成之后沉积用作干蚀刻掩模的金属时的示图,图11是示出在移去PR之后出现的被暴露在p型GaN层上的金属掩模的示图。图12示出了在其中覆盖用于干蚀刻掩模的金属的部分之外,当进行蚀刻直到暴露n型GaN层(2)时的示图。图13示出了使用氢氟酸除去在形成六个单元3x2阵列中使用的用于干蚀刻的金属掩模的状态。
图14示出了用于沉积p型电极的光刻结束时的示图。P型电极可以通过使用ITO形成为透明电极,以便尽可能减少由p型电极金属减少的发光量。图15是示出通过电子束蒸发等沉积在p型层上的ITO的示图。图16示出了在剥离后残留的ITO。在移除不必要的金属部分的剥离工艺和使用丙酮进行的PR之后,残留ITO。图17示出了通过溅射等在前表面上沉积和图案化绝缘层(例如,SiO2)形成绝缘层之后,当将形成n型电极、p型电极和n型横跨电极(混合电极)的区域的二氧化硅被蚀刻以将n型电极部分和与p型电极对应的区域电隔离时的示图。图18是示出仅使用掩模施加在横跨元件内部的金属桥的PR和在金属桥下方形成的空白空间的部分的状态的示图。图19是示出形成包括横跨元件内部的金属桥的n型极板和n型电极的状态的示图。在形成结构的这个步骤中,在形成n型电极22和23以及n型极板10的光刻步骤过程中,可以连同移去PR的步骤一起,移去以桥的形式应用的PR9。或者,可以在首先形成n型电极的各个光刻步骤和用于形成n型极板的光刻分开进行的方法中移去PR9。可在这个过程中形成空白空间。此外,可以使用用于沉积的掩模以桥接的形式在桥形的PR上形成金属桥,在这一点上,在形成金属桥之后可以通过化学品(例如,PR去除剂等)移去较低位置处的PR。
图20是示出形成接合电极的金属材料的势垒金属12、向衬底反射被辐射到p型电极的光的反射器金属11、p型极板、以及用于防止由过电流引起的元件的损坏的避雷针区域(lightningrodregion)13的状态的示图(韩国专利注册号1011399150000)。图21是示出在n型极板和p型极板上形成一次焊料金属状态的示图,以便移除当以倒装芯片的形式颠倒LED芯片并且LED芯片被粘附至子底座时产生的步骤。图22是示出形成二次焊料金属的状态的示图,该二次焊料金属用于连接p型极板和p电极以流畅地在p型极板和p电极之间流动电流。由于通过该工艺使极板电极的高度平整,倒装芯片工艺变得有利,并且能够确保相对于金属桥的高度间隔。因此,由于金属桥在上部分和下部分具有空白空间,污染空气被平稳地扩散,并因此污染的变化能够迅速地反应为电流的变化。
符号说明
1:蓝宝石衬底2:n-GaN
21:n-GaN
22:n型电极极板连接单元
23:n型电极延伸单元
3:MQW4:p-GaN
5:PR6:金属(用于干蚀刻掩模)
7:ITO8:SiO2
9:应用于桥形中的PR
10:n型极板和电极11:反射器金属
12:势垒金属13:避雷针
14:一次焊料15:二次焊料
Claims (13)
1.一种集成有混合传感器的LED芯片,所述芯片包括:
衬底;
n型半导体层,形成在所述衬底上;
两个或更多LED单元,形成在所述n型半导体层上以包括有源层和p型半导体层;
绝缘层,形成在除了形成所述LED单元的区域之外的部分中;
p型电极极板,形成在所述绝缘层上以连接至所述LED单元的所述p型半导体层;
两个或更多n型电极极板,形成在被暴露在移除了所述绝缘层的区域中的所述n型半导体层上;
n型电极极板连接单元,穿过所述两个或更多单元之间的中央区域以连接所述n型电极极板;以及
空白空间,形成在所述n型电极极板连接单元之下。
2.根据权利要求1所述的LED芯片,进一步包括:连接到所述芯片的输出装置。
3.根据权利要求2所述的LED芯片,其中,所述输出装置显示电流的变化。
4.根据权利要求2所述的LED芯片,其中,在所述n型电极极板连接单元被污染物损坏时通过改变与电极连接的所述输出装置的输出来感测污染水平。
5.根据权利要求4所述的LED芯片,其中,n型电极由感测所述污染水平并且改变输出的所述混合传感器与作为照明元件利用流入所述n型半导体层的电流发光的所述LED单元共享。
6.根据权利要求1所述的LED芯片,其中,所述n型电极极板连接单元是对化学刺激物起反应的金属。
7.根据权利要求6所述的LED芯片,其中,所述化学刺激物是以下各项中的任何一个或多个:包括神经毒气、无色气体和无味气体的化学气体,包括HCl、H2SO4、硝酸、HF和王水的环境污染气体,以及环境污染物。
8.根据权利要求1所述的LED芯片,其中,由于所述n型电极极板连接单元的顶部低于所述n型极板电极或所述p型极板电极的高度,空间设置在所述n型电极极板连接单元之上。
9.根据权利要求2所述的LED芯片,其中,所述输出装置显示电流变化率。
10.一种集成有混合传感器的LED芯片的制造方法,所述方法包括以下步骤:
制备衬底;
在所述衬底上堆叠包含MQW外延层的半导体层;
在所述半导体层上形成两个或更多LED单元;
在所述LED单元和所述衬底上形成绝缘层之后,蚀刻将要形成两个或更多n型电极极板、两个或更多p型电极极板和n型横跨电极的区域的二氧化硅,以便将n型电极部分与对应于p型电极的区域电隔离;
形成在所述LED单元之间横跨的桥形的PR图案;
形成覆盖所述PR图案的金属桥形的用于连接所述n型电极极板的连接单元;以及
通过移除桥形的所述PR来形成所述混合传感器。
11.根据权利要求10所述的方法,其中,形成连接单元的所述步骤是使用掩模形成金属桥的沉积步骤。
12.根据权利要求10所述的方法,其中,形成连接单元的所述步骤包括:
形成用于连接所述n型电极极板的金属的沉积步骤;以及
以桥的形式在所述桥形的PR上形成沉积金属的光刻步骤,其中,在所述光刻的工艺中移除桥形的所述PR。
13.根据权利要求10至12中任一项所述的方法,其中,所述p型电极极板和所述n型电极极板的高度被设定为高于所述金属桥。
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US10596388B2 (en) * | 2016-09-21 | 2020-03-24 | Epistar Corporation | Therapeutic light-emitting module |
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- 2015-03-23 CN CN201580000143.5A patent/CN105283971B/zh not_active Expired - Fee Related
- 2015-03-23 US US14/654,102 patent/US9831405B2/en not_active Expired - Fee Related
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US10211382B2 (en) | 2019-02-19 |
US20170317254A1 (en) | 2017-11-02 |
US20160284956A1 (en) | 2016-09-29 |
KR101532557B1 (ko) | 2015-06-30 |
CN105283971B (zh) | 2017-08-25 |
US9831405B2 (en) | 2017-11-28 |
WO2015170825A1 (ko) | 2015-11-12 |
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